JPH03210479A - Sensor for detecting displacement - Google Patents
Sensor for detecting displacementInfo
- Publication number
- JPH03210479A JPH03210479A JP2003626A JP362690A JPH03210479A JP H03210479 A JPH03210479 A JP H03210479A JP 2003626 A JP2003626 A JP 2003626A JP 362690 A JP362690 A JP 362690A JP H03210479 A JPH03210479 A JP H03210479A
- Authority
- JP
- Japan
- Prior art keywords
- displacement
- electrode
- displacement body
- sensor
- see
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000006073 displacement reaction Methods 0.000 title claims abstract description 28
- 239000000463 material Substances 0.000 claims abstract 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- 239000011521 glass Substances 0.000 claims description 4
- 239000000725 suspension Substances 0.000 claims 3
- 238000009413 insulation Methods 0.000 claims 1
- 238000000034 method Methods 0.000 claims 1
- 238000007689 inspection Methods 0.000 abstract description 7
- 239000000758 substrate Substances 0.000 abstract description 4
- GRPQBOKWXNIQMF-UHFFFAOYSA-N indium(3+) oxygen(2-) tin(4+) Chemical compound [Sn+4].[O-2].[In+3] GRPQBOKWXNIQMF-UHFFFAOYSA-N 0.000 abstract 3
- 238000007733 ion plating Methods 0.000 abstract 2
- 230000001133 acceleration Effects 0.000 description 16
- 238000010586 diagram Methods 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 5
- 239000007772 electrode material Substances 0.000 description 4
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000005422 blasting Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 230000005611 electricity Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P2015/0805—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration
- G01P2015/0822—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass
- G01P2015/0825—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass for one single degree of freedom of movement of the mass
- G01P2015/0828—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass for one single degree of freedom of movement of the mass the mass being of the paddle type being suspended at one of its longitudinal ends
Abstract
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は変位体の変位を検出するセンサに係り。[Detailed description of the invention] [Industrial application field] The present invention relates to a sensor that detects the displacement of a displacement body.
特に変位体に対向する電極部を備えたセンサに関するも
のである。In particular, the present invention relates to a sensor equipped with an electrode portion facing a displacement body.
一般に変位体の変位を検出するセンサとしては。 Generally used as a sensor to detect the displacement of a displacement object.
加速度センサ等が知られている。Acceleration sensors and the like are known.
この加速度センサは例えば特開昭６１−９７５７２号公
報等にある半導体加速度センサが最近提案されて注目さ
れている。As an example of this acceleration sensor, a semiconductor acceleration sensor disclosed in, for example, Japanese Patent Laid-Open No. 61-97572 has recently been proposed and is attracting attention.
この半導体加速度センサはエツチング等の薄膜技術を用
いて半導体基板上に形成されるものであり、半導体のピ
エゾ抵抗効果による抵抗変位や偏位による微少な容量変
化を検出することによって加速度を検出するようになっ
ている。This semiconductor acceleration sensor is formed on a semiconductor substrate using thin film technology such as etching, and detects acceleration by detecting resistance displacement due to the piezoresistive effect of the semiconductor and minute capacitance changes due to deviation. It has become.
そして、これらの加速度センサは薄膜技術を用いて形成
されるため極めて小型に形成できるといった効果や、集
積回路と同一基板で形成できるといった効果があり、自
動車の走行状態を検出するセンサとして注目されている
。Since these acceleration sensors are formed using thin film technology, they have the advantage of being extremely compact and can be formed on the same substrate as an integrated circuit, and are attracting attention as sensors for detecting the driving state of automobiles. There is.
〔発明が解決しようとする課題〕
ところで、このような加速度センサにおいては電極と変
位体の間の隙間は数ミクロンメータのオーダであり、異
物がこの隙間に侵入した場合にショートという問題が発
生する。[Problem to be Solved by the Invention] Incidentally, in such an acceleration sensor, the gap between the electrode and the displacement body is on the order of several micrometers, and if a foreign object enters this gap, a short circuit problem will occur. .
そして、この場合の検査は電気的な出力を検査するとい
った間接的な方法で行っていたが、時間が多くかかると
いう製造上の問題があった。In this case, inspection was performed indirectly by inspecting the electrical output, but there was a manufacturing problem in that it took a lot of time.
その理由としては、現在提案されている加速度センサで
は、電極材料としてアルミニウムを用いて蒸着あるいは
スパッタリングで電極を形成しているため不透明な電極
となって外観的に検査できないからである。The reason for this is that in currently proposed acceleration sensors, the electrodes are formed by vapor deposition or sputtering using aluminum as the electrode material, resulting in opaque electrodes that cannot be visually inspected.
本発明の特徴は電極を通して変位体との間が可視できる
ような電極を用いるようにしたものである。A feature of the present invention is that an electrode is used so that the distance between the displacement body and the displacement body can be seen through the electrode.
このような構成によれば電極を通して電極と変位体の間
に異物が侵入しているかどうか可視でき。With this configuration, it is possible to see through the electrode whether or not foreign matter has entered between the electrode and the displacement body.
検査時間を大幅に短縮することが可能となる。It becomes possible to significantly shorten inspection time.
以下本発明の実施例を図面に基づき詳細に説明する。 Embodiments of the present invention will be described in detail below based on the drawings.
第１図において、参照番号１０はシリコンよりなる板（
以下シリコン板と言う）であり、このシリコン板１０の
両側にはガラス等よりなる透視基台１２．１４が固着さ
れている。この透視基台１２．１４は電気的に絶縁作用
を有している。In FIG. 1, reference number 10 is a plate made of silicon (
(hereinafter referred to as a silicon plate), and see-through bases 12 and 14 made of glass or the like are fixed to both sides of this silicon plate 10. This transparent base 12, 14 has an electrically insulating effect.
シリコン板１０の一部には重垂１６を有するカンチレバ
ー１８が形成されており、このカンチレバー１８の両側
には固定電極２０．２２が対向している。A cantilever 18 having a vertical wall 16 is formed on a part of the silicon plate 10, and fixed electrodes 20, 22 are opposed to both sides of the cantilever 18.
固定電極２０．２２は透明基台１２．１４に固定され、
これらはスルーホール２４を介して取り出し線２６へ接
続されている。A fixed electrode 20.22 is fixed to a transparent base 12.14,
These are connected to a lead wire 26 via a through hole 24.
そして、この加速度センサは第２図ないし第４図に示さ
れているように３部材からなるものである。第２図及び
第４図は透明基台１２．１４であり矩形の電極２０．２
２が形成されている。一方、第３図はシリコン板１０で
あり、内部に重垂１６゜カンチレバー１８が正画形成さ
れている。This acceleration sensor is composed of three members as shown in FIGS. 2 to 4. 2 and 4 show a transparent base 12.14 and a rectangular electrode 20.2.
2 is formed. On the other hand, FIG. 3 shows a silicon plate 10, on the inside of which a vertical 16° cantilever 18 is formed.
そして、これら３部材を組み立てたものが第５図に示さ
れている。FIG. 5 shows an assembly of these three members.
このような構成の加速度センサは次のような動作で加速
度を検出することができる。The acceleration sensor having such a configuration can detect acceleration through the following operation.
今、重垂１６と固定電極２０．２２の間の静電容量は等
しいものとする。次に加速度が加わると重垂１６はどち
らか一方へ変位するので静電容量もこれに伴って変化す
る。したがってこの静電容量の変化を打ち消すべくフィ
ードバックをかけてやれば１重垂１６は変位することな
く元の位置に留まる。この時のフィードバックされる電
気量を測定すれば加速度が測定できるものである。Now, it is assumed that the capacitances between the stack 16 and the fixed electrodes 20 and 22 are equal. Next, when acceleration is applied, the weight 16 is displaced to either side, and the capacitance changes accordingly. Therefore, if feedback is applied to cancel this change in capacitance, the single layer 16 will remain at its original position without being displaced. Acceleration can be measured by measuring the amount of electricity fed back at this time.
さて、本発明はこのような加速度センサにおいて固定電
極２０．２２を通して重垂１６が可視できるようにする
ものである。Now, the present invention enables the vertical drop 16 to be visible through the fixed electrodes 20, 22 in such an acceleration sensor.
次にこの構成について説明する。Next, this configuration will be explained.
第１図において、固定電極２０．２２は酸化インジウム
−スズよりなる材料を用いている。In FIG. 1, the fixed electrodes 20, 22 are made of indium-tin oxide.
この酸化インジウム−スズは透明基台１２゜１４に固着
される際高周波イオンブレーティングによって行なわれ
る。This indium-tin oxide is fixed to the transparent base 12.degree. 14 by high frequency ion blasting.
そして、このように高周波イオンブレーティングによっ
て酸化インジウム−スズを成膜すると固定電極自身が透
明な電極となり、透明基台１２゜１８及び透明な固定型
［ｉ２０，２２を介して重垂１６まで可視することがで
きる。Then, by forming a film of indium-tin oxide by high-frequency ion blasting in this way, the fixed electrode itself becomes a transparent electrode, and the transparent base 12°18 and the transparent fixed mold [i20, 22 are visible up to can do.
このように、重垂１６まで可視できるような構造とする
こができるため、異物の侵入があった場合外観から検査
することができ検査時間を短縮することが可能となる。In this way, since the structure can be made such that even the hanging 16 can be seen, if a foreign object has entered, it can be inspected from the outside, and the inspection time can be shortened.
尚、電極材料として酸化インジウム−スズを用いたが、
この他機化インジウムや酸化スズを用いても同様の透視
電極が形成される。Although indium-tin oxide was used as the electrode material,
Similar transparent electrodes can also be formed using mechanized indium or tin oxide.
ここで、高周波イオンブレーティングを用いて電極を形
成する場合はスルーホール２４を含めて取り出し部２６
が形成することができるため、正確な電極２０．２２と
取り出し線２６の導通が得られる効果も併せ有している
。Here, when forming an electrode using high frequency ion blating, the extraction part 26 including the through hole 24
Since the electrodes 20, 22 and the lead wire 26 can be electrically connected to each other accurately, the electrodes 20, 22 and the lead wire 26 can be electrically connected to each other.
次に本発明の他の実施例を第６図、第７図に基づき説明
する。Next, another embodiment of the present invention will be described based on FIGS. 6 and 7.
今までは酸化インジウム−スズを電極材料として高周波
イオンブレーティングで電極を形成して、電極自身を透
明とする実施例を説明したが、第６図、第７図は電極自
身を網目状にして可視できるようにしたものである。Up to now, we have explained examples in which the electrodes are made transparent by using indium-tin oxide as the electrode material and formed by high-frequency ion blating, but in Figures 6 and 7, the electrodes themselves are made into a mesh shape. It is made visible.
第６図、第７図には網目の形状として丸穴あるいは矩形
穴を多数設けて網目状の電極を形成しである。In FIGS. 6 and 7, a large number of round or rectangular holes are provided as a mesh shape to form a mesh electrode.
このような電極形状を採用すると、電極の間にガラス状
の透明基台がのぞくため、実質的に電極を通して重垂１
６まで可視できるようになる。When such an electrode shape is adopted, a glass-like transparent base can be seen between the electrodes, so it is practically possible to see through the electrodes.
You can now see up to 6.
この場合、電極材料はアルミニウム等を用いることがで
き、しかも高周波イオンブレーティングで電極を形成す
れば前述したようにスルーホール２４を介してと取り出
し線２６と固定電極２０゜２２を形成できるため、正確
な導通が得られるようになる。In this case, aluminum or the like can be used as the electrode material, and if the electrode is formed by high frequency ion blating, the lead wire 26 and the fixed electrode 20° 22 can be formed through the through hole 24 as described above. Accurate conduction can now be obtained.
以上述べたように１本発明によれば固定電極を通して重
垂等の変位体まで可視できるような構成を得られるので
、異物の侵入等があっても外観検査で見つけることがで
き、製造上の検査時間を大幅に短縮できるものである。As described above, according to the present invention, it is possible to obtain a configuration in which even a displaced object such as a heavy hanging can be seen through the fixed electrode, so even if foreign matter has entered, it can be detected by external inspection, and it is possible to avoid manufacturing problems. This can significantly shorten inspection time.
第１図は本発明の一実施例になる加速度センサの断面図
、第２図は第１図の■−■矢視図、第３図は第１図の■
−■矢視図、第４図は第１図の■−■矢視図、第５図は
加速度センサの組立斜視図。
第６図及び第７図は本発明の他の実施例になる電極形状
を示す正面図である。
１０・・・シリコン板、１２．１４・・・透明基台、１
６・・・重垂、２０，２２・・・固定電極、２４・・・
スルーホ第
図
第
図
第
図
第
図
第
図FIG. 1 is a cross-sectional view of an acceleration sensor according to an embodiment of the present invention, FIG. 2 is a view taken along the arrow ■-■ in FIG. 1, and FIG.
FIG. 4 is a view taken from the ■-■ arrow in FIG. 1, and FIG. 5 is an assembled perspective view of the acceleration sensor. FIGS. 6 and 7 are front views showing electrode shapes according to other embodiments of the present invention. 10... Silicon plate, 12.14... Transparent base, 1
6... Judare, 20, 22... Fixed electrode, 24...
Thru-ho diagram diagram diagram diagram diagram diagram
Claims (1)
で透視できる透視電極 とを有してなる変位を検出するセンサ。 ２、（ａ）力が作用することによつて変位する変位体； （ｂ）前記変位体と予め定められた空隙を介して対向す
る一体の透視性絶縁基台； （ｃ）前記透視性絶縁基台と前記変位体の間に配置され
、しかも前記透視性絶縁基台を介して前記変位体まで透
視できる透視電極 を有してなる変位を検出するセンサ。 ３、（ａ）力が作用することによつて変位する重垂とこ
れを支持するカンチレバーで構成され、しかも前記重垂
とカンチレバーがシリコンからなる変位体； （ｂ）前記変位体を両側から挟持し、しかも前記重垂と
の間に予め定めた空隙を形成する一体のガラス基台； （ｃ）前記ガラス基台に固定され、前記変位体まで透視
できる透視電極 を有してなる変位を検出するセンサ。 ４、請求項第３項において、前記透視電極は酸化インジ
ウム−スズよりなる材料で作られている変位を検出する
センサ。 ５、請求項第４項において、前記酸化インジウム−スズ
は高周波イオンブレーティング法によつて前記ガラス基
台に固着される変位を検出するセンサ。 ６、請求項第３項において、前記透視電極は網目状に形
成されている変位を検出するセンサ。[Claims] 1. (a) A displacement body that is displaced by the action of a force; (b) A see-through electrode that detects the displacement of the displacement body and can also see through the displacement body. A sensor that detects displacement. 2. (a) A displacement body that is displaced by the action of force; (b) An integral transparent insulating base that faces the displacement body through a predetermined gap; (c) The transparent insulation A sensor for detecting displacement, comprising a see-through electrode that is disposed between a base and the displacement body and that can see through the transparent insulating base to the displacement body. 3. (a) A displacement body consisting of a heavy suspension that is displaced by the action of force and a cantilever that supports it, and the heavy suspension and the cantilever are made of silicon; (b) The displacement body is held from both sides. and an integrated glass base forming a predetermined gap between it and the vertical suspension; (c) detecting displacement by having a see-through electrode fixed to the glass base and capable of seeing through to the displacement body; sensor. 4. A sensor for detecting displacement according to claim 3, wherein the transparent electrode is made of a material consisting of indium-tin oxide. 5. The sensor according to claim 4, wherein the indium-tin oxide is fixed to the glass base by a high frequency ion blating method. 6. The sensor for detecting displacement according to claim 3, wherein the see-through electrode is formed in a mesh shape.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003626A JPH0833410B2 (en) | 1990-01-12 | 1990-01-12 | Acceleration sensor |
| US07/596,367 US5228341A (en) | 1989-10-18 | 1990-10-12 | Capacitive acceleration detector having reduced mass portion |
| DE4032828A DE4032828C2 (en) | 1989-10-18 | 1990-10-16 | Acceleration detector |
| KR1019900016578A KR910008414A (en) | 1989-10-18 | 1990-10-18 | Acceleration detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003626A JPH0833410B2 (en) | 1990-01-12 | 1990-01-12 | Acceleration sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03210479A true JPH03210479A (en) | 1991-09-13 |
| JPH0833410B2 JPH0833410B2 (en) | 1996-03-29 |
Family
ID=11562707
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003626A Expired - Lifetime JPH0833410B2 (en) | 1989-10-18 | 1990-01-12 | Acceleration sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0833410B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4628083B2 (en) * | 2004-12-15 | 2011-02-09 | 京セラ株式会社 | Pressure detection device package, pressure detection device, pressure sensitive element, and pressure detection device package manufacturing method |
| CN105817953B (en) * | 2016-05-20 | 2018-04-13 | 天津大学 | The measuring device and measuring method of a kind of lathe space Thermal Error |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5589076A (en) * | 1978-11-14 | 1980-07-05 | Ekloef Krister | Impact indicator |
| JPS57142363U (en) * | 1981-03-04 | 1982-09-07 | ||
| JPH01152369A (en) * | 1987-12-09 | 1989-06-14 | Hitachi Ltd | Capacity type acceleration sensor |
-
1990
- 1990-01-12 JP JP2003626A patent/JPH0833410B2/en not_active Expired - Lifetime
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5589076A (en) * | 1978-11-14 | 1980-07-05 | Ekloef Krister | Impact indicator |
| JPS57142363U (en) * | 1981-03-04 | 1982-09-07 | ||
| JPH01152369A (en) * | 1987-12-09 | 1989-06-14 | Hitachi Ltd | Capacity type acceleration sensor |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0833410B2 (en) | 1996-03-29 |
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