JPH0320839B2 - - Google Patents
Info
- Publication number
- JPH0320839B2 JPH0320839B2 JP26370186A JP26370186A JPH0320839B2 JP H0320839 B2 JPH0320839 B2 JP H0320839B2 JP 26370186 A JP26370186 A JP 26370186A JP 26370186 A JP26370186 A JP 26370186A JP H0320839 B2 JPH0320839 B2 JP H0320839B2
- Authority
- JP
- Japan
- Prior art keywords
- memory
- mosfet
- mosfets
- memory array
- output
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000011159 matrix material Substances 0.000 claims description 29
- 239000004065 semiconductor Substances 0.000 claims description 17
- 230000015572 biosynthetic process Effects 0.000 claims 2
- 238000003786 synthesis reaction Methods 0.000 claims 2
- 238000003491 array Methods 0.000 claims 1
- 239000003990 capacitor Substances 0.000 description 22
- 239000000758 substrate Substances 0.000 description 11
- 238000010586 diagram Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
Landscapes
- Read Only Memory (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61263701A JPS62188098A (ja) | 1986-11-07 | 1986-11-07 | 半導体リ−ドオンリメモリ |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61263701A JPS62188098A (ja) | 1986-11-07 | 1986-11-07 | 半導体リ−ドオンリメモリ |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59192504A Division JPS60101798A (ja) | 1984-09-17 | 1984-09-17 | 半導体リ−ドオンリメモリ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62188098A JPS62188098A (ja) | 1987-08-17 |
| JPH0320839B2 true JPH0320839B2 (enrdf_load_html_response) | 1991-03-20 |
Family
ID=17393128
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61263701A Granted JPS62188098A (ja) | 1986-11-07 | 1986-11-07 | 半導体リ−ドオンリメモリ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62188098A (enrdf_load_html_response) |
-
1986
- 1986-11-07 JP JP61263701A patent/JPS62188098A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62188098A (ja) | 1987-08-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5311482A (en) | Semiconductor integrated circuit | |
| US5193074A (en) | Semiconductor memory device having hierarchical row selecting lines | |
| US4977538A (en) | Semiconductor memory device having hierarchical row selecting lines | |
| US4240151A (en) | Semiconductor read only memory | |
| JP2602508B2 (ja) | 集積メモリ回路 | |
| USRE36813E (en) | Semiconductor memory device having an improved wiring and decoder arrangement to decrease wiring delay | |
| JPH06119781A (ja) | 半導体メモリ | |
| US4554646A (en) | Semiconductor memory device | |
| EP0205936B1 (en) | Semiconductor integrated circuit | |
| US4896300A (en) | Microprocessor including a microprogram ROM having a dynamic level detecting means for detecting a level of a word line | |
| JPS6251316A (ja) | 一方向導通形スイツチング回路 | |
| US4899308A (en) | High density ROM in a CMOS gate array | |
| JPS6119178B2 (enrdf_load_html_response) | ||
| US4924438A (en) | Non-volatile semiconductor memory including a high voltage switching circuit | |
| US4596000A (en) | Semiconductor memory | |
| US4428067A (en) | Precharge for split array ratioless ROM | |
| USRE33280E (en) | Semiconductor memory device | |
| US4651031A (en) | Address decoder circuit | |
| US5305279A (en) | Semiconductor memory device having word line selection logic circuits | |
| JPH0320839B2 (enrdf_load_html_response) | ||
| US4037217A (en) | Read-only memory using complementary conductivity type insulated gate field effect transistors | |
| JPH05120881A (ja) | 半導体記憶装置 | |
| JPH0477399B2 (enrdf_load_html_response) | ||
| US7057916B2 (en) | Small size ROM | |
| JPS6045509B2 (ja) | 半導体リ−ドオンリメモリ |