JPH03208335A - Holding device for semiconductor substrate - Google Patents

Abstract

PURPOSE:To eliminate a thermal deformation of a semiconductor substrate made of thin quartz or the like by forming a structure capable of vertically stably holding the substrate at three or more points of the periphery. CONSTITUTION:A quartz substrate 1 is engaged with the grooves 7 of supporting bars 6 of a lower boat 2B, stooled on the boat 2B, and an upper boat 2A is placed on the boat 2B by engaging protrusions 4 with recesses 5. In this case, the substrate 1 is also engaged with the grooves 7 of the bars 6 of the boat 2A to be accurately held in a vertical attitude. Thus, even if the thickness of the substrate 1 is 700mum or less, the substrate 1 is vertically held at the surface, and oven if it is heat treated at a higher temperature than that for causing a distortion, the substrate 1 is not thermally deformed by a bending stress generated by its own weight.

Description

[Detailed Description of the Invention] Industrial Application Field The present invention is a semiconductor substrate holding device for holding a semiconductor substrate such as a quartz substrate! It is related to.

BACKGROUND OF THE INVENTION In recent years, integrated circuits for liquid crystal displays and the like have been manufactured in which polysilicon thin film transistors are formed on quartz substrates.

FIGS. 2(a) and 2(b) show a conventional semiconductor substrate holding device for holding a quartz substrate, with FIG. 2(a) being a front view and FIG. 2(b) being a side view. In FIG. 2, 11 is a quartz substrate, 12 is a quartz boat that holds the quartz substrate 11, and the quartz boat 12 has two support bars 1 extending laterally.
2a, and each support bar 12a has a plurality of grooves 13 for holding the quartz substrate 11.0 The quartz substrate 11 can be held at two points by the grooves 13 provided in each support bar 12a of the quartz boat 12. 0 held vertically in support
On the quartz substrate 11, semiconductor thin films, dielectric thin films, etc. for forming devices are formed. The quartz substrate 11 set on the quartz boat 12 as described above is introduced into a horizontal diffusion furnace, and processes such as thermal oxidation and impurity diffusion are performed.

Problems to be Solved by the Invention However, in such a conventional semiconductor substrate holding device, the quartz substrate 11 is held only by the two grooves 13 of the quartz boat 12; Since the width of the groove 13 for this purpose is wider than the thickness of the quartz substrate 11, the quartz substrate 11 has the following characteristics:
It won't stay perfectly vertical and will tilt a little. Therefore, bending stress is generated in the quartz substrate 11, and in high-temperature heat treatment such as a gate oxidation process where thermal oxidation is performed at 1100°C, which is a temperature higher than the strain point of quartz, in order to obtain good transistor characteristics, The quartz substrate 11 is thermally deformed due to the bending stress.

The present invention solves the above problems, and aims to provide a semiconductor substrate holding device in which thermal deformation does not occur in a semiconductor substrate such as a quartz substrate.

Means for Solving the Problems In order to solve the above-mentioned spacing, the semiconductor substrate holding device of the present invention consists of an upper boat and a lower boat that can be attached to and detached from each other, and both boats each have one support bar extending in the lateral direction.
Three or more support bars are provided in both boats, and a plurality of grooves into which the peripheral portions of semiconductor substrates can be fitted are formed at corresponding positions on the inside of each support bar.

Effect With the above configuration 4, even if the width of the grooves of both boats holding the semiconductor substrate is wider than the semiconductor substrate, the semiconductor substrate is held at three or more points, so it is installed completely vertically, and the semiconductor substrate is No bending stress occurs, and thermal deformation caused by high-temperature treatment can be significantly reduced.

Example Hereinafter, one embodiment of the present invention will be described based on the drawings.

FIG. 1(aL) (b) shows a semiconductor substrate holding device according to an embodiment of the present invention, FIG. 1(a) is a front view, and FIG. 1(b) is a side view. In the figure, 1 is a quartz substrate, on which a semiconductor thin film, dielectric thin film, etc. for configuring a semiconductor device are formed. 4. A quartz substrate 1 is a semiconductor substrate holding device 2 made of quartz. The semiconductor substrate holding device 2 consists of an upper boat 2A and a lower boat 2B.
, a 0-car boat in which the upper boat 2A is removably attached to the lower boat 2B by fitting the convex portion 4 and the concave portion 5 provided correspondingly to the front and rear frame portions 3A and 3B of the 2B. Three support bars 6 extending in the horizontal direction are provided at appropriate intervals between the front and rear frame parts 3A and 3B of 2A and 2B, and the peripheral part of the quartz substrate 1 can be inserted into the inside of each support bar 6. A plurality of groove portions 7 are formed at corresponding positions (same position when viewed from the side as shown in FIG. 1(b)).

With the above configuration, first, the quartz substrate 1 is fitted into the groove 7 of each support bar 6 of the lower boat 2B, and is erected on the lower boat 2B. After this, move the upper boat 2A to the lower boat 1-2B.
The convex portion 4 and the concave portion 5 are placed on top of each other while fitting each other. At this time, the quartz substrate 1 also fits into the groove 7 of each support bar 6 of the upper bow 2A and is held in an accurate vertical position. As a result, even if the thickness of the quartz substrate 1 is 700 μm or less, the substrate surface of the quartz substrate 1 is held vertically. Even if heat treatment is performed, the quartz substrate 1 will not be thermally deformed due to bending stress caused by its own weight.

In the above example, the quartz substrate 1 was supported at six points, but for example, two support bars with grooves were provided on the lower boat, and one support bar with a groove was provided on the upper boat. The quartz substrate can be held vertically even with a three-point support structure, and the number of support points may be three or more as long as the quartz substrate can be stably fixed vertically.

Effects of the Invention As described above, according to the present invention, the semiconductor substrate is separated from the surrounding area by three
Since it is an addendum that can be stably held vertically above the point, 5
Even if a semiconductor substrate made of quartz or the like having a thickness of about 0.00 μm is used, it will not be thermally deformed, and the yield of semiconductor devices using this semiconductor substrate will be improved.

[Brief explanation of drawings]

FIGS. 1(a) and (b) are a front view and a side view of a semiconductor substrate holding device according to a practical example of the present invention, and FIG. 2(a) is
and (1)) are a front view and a side view of a conventional semiconductor substrate holding device. 1... Quartz substrate, 2... Semiconductor substrate holding device, 2A
...Upper boat, 2B...Lower boat, 6...Support nook 7...Groove.

Claims (1)

[Claims] 1. A semiconductor substrate holding device made of heat-resistant material and holding a plurality of semiconductor substrates in an upright position, consisting of an upper boat and a lower boat that can be attached to and removed from each other, and both boats have supports that extend laterally. A semiconductor substrate holding device, wherein one or more bars are provided for each support bar, and three or more bars are provided for both boats, and a plurality of grooves into which peripheral portions of the semiconductor substrate can be fitted are formed at corresponding positions inside each support bar.