JPH03202206A - Cutting tool coating chip and its manufacture - Google Patents
Cutting tool coating chip and its manufactureInfo
- Publication number
- JPH03202206A JPH03202206A JP34043889A JP34043889A JPH03202206A JP H03202206 A JPH03202206 A JP H03202206A JP 34043889 A JP34043889 A JP 34043889A JP 34043889 A JP34043889 A JP 34043889A JP H03202206 A JPH03202206 A JP H03202206A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- diamond
- diamond layer
- coated
- tungsten carbide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000011248 coating agent Substances 0.000 title claims abstract description 18
- 238000000576 coating method Methods 0.000 title claims abstract description 18
- 238000005520 cutting process Methods 0.000 title claims description 21
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 239000010410 layer Substances 0.000 claims abstract description 94
- 239000010432 diamond Substances 0.000 claims abstract description 60
- 229910003460 diamond Inorganic materials 0.000 claims abstract description 59
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical group [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 claims abstract description 27
- 239000011195 cermet Substances 0.000 claims abstract description 23
- 238000000034 method Methods 0.000 claims abstract description 11
- -1 titanium carbide nitride Chemical class 0.000 claims abstract description 5
- 239000002356 single layer Substances 0.000 claims abstract description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 23
- 239000010936 titanium Substances 0.000 claims description 23
- 229910052719 titanium Inorganic materials 0.000 claims description 23
- 239000012808 vapor phase Substances 0.000 claims description 9
- 238000001308 synthesis method Methods 0.000 claims description 8
- 238000005240 physical vapour deposition Methods 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 150000002739 metals Chemical class 0.000 claims description 4
- 230000000737 periodic effect Effects 0.000 claims description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical class [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 3
- 150000004649 carbonic acid derivatives Chemical class 0.000 claims description 3
- 150000001247 metal acetylides Chemical class 0.000 claims description 3
- 150000004767 nitrides Chemical class 0.000 claims description 3
- 239000006104 solid solution Substances 0.000 claims description 3
- 239000002245 particle Substances 0.000 abstract description 13
- 239000006185 dispersion Substances 0.000 abstract description 8
- 239000000203 mixture Substances 0.000 abstract description 5
- 239000011230 binding agent Substances 0.000 abstract description 4
- 238000005289 physical deposition Methods 0.000 abstract 1
- 239000000843 powder Substances 0.000 description 9
- 239000000126 substance Substances 0.000 description 7
- 230000000694 effects Effects 0.000 description 5
- 239000012071 phase Substances 0.000 description 5
- 238000004873 anchoring Methods 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000011247 coating layer Substances 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000006911 nucleation Effects 0.000 description 2
- 238000010899 nucleation Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 230000035484 reaction time Effects 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 238000003786 synthesis reaction Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Cutting Tools, Boring Holders, And Turrets (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、炭化タングステン基超硬合金または炭窒化
チタン基サーメット表面に耐剥離性の優れた物理蒸着硬
質層を形成した切削工具用コーティングチップおよびそ
の製造法に関するものである。[Detailed Description of the Invention] [Industrial Application Field] The present invention provides a coated chip for cutting tools in which a physical vapor deposited hard layer with excellent peeling resistance is formed on the surface of a tungsten carbide-based cemented carbide or a titanium carbonitride-based cermet. and its manufacturing method.
従来、一般に、炭化タングステン基超硬合金または炭窒
化チタン基サーメットの表面に物理蒸着法または化学蒸
着法により周期律表の４ａ、５ａおよび６ａ族の金属の
炭化物、窒化物、炭窒化物、炭酸化物、炭窒酸化物、並
びに酸化アルミニウム、さらにこれらの２種以上の固溶
体からなる群から選んだ１種の単層または２種以上の多
重層からなる硬質層（以下、物理蒸着された硬質層を物
理蒸着硬質層、化学蒸着された硬質層を化学蒸着硬質層
という）を形成してなる切削工具用コーティングチップ
は知られている。Conventionally, carbides, nitrides, carbonitrides, and carbonates of metals from groups 4a, 5a, and 6a of the periodic table are generally deposited on the surface of tungsten carbide-based cemented carbide or titanium carbonitride-based cermet by physical vapor deposition or chemical vapor deposition. A hard layer (hereinafter referred to as a hard layer deposited by physical vapor deposition) consisting of a single layer or a multilayer of two or more types selected from the group consisting of aluminum oxides, carbonitride oxides, aluminum oxides, and solid solutions of two or more of these types. A coating tip for a cutting tool is known in which a hard layer is formed by physical vapor deposition, and a hard layer formed by chemical vapor deposition is called a chemical vapor deposited hard layer.
上記炭化タングステン基超硬合金または炭窒化チタン基
サーメットの表面に形成された物理蒸着硬質層は、靭性
に優れ、またこの物理蒸着硬質層を有する炭化タングス
テン基超硬合金または炭窒化チタン基サーメットを切削
工具用チップとして切削に使用した場合、被削材の面粗
さが小さいなどの長所を有する。しかしながら、物理蒸
着硬質層は、化学蒸着硬質層に比べて低温度でのコーテ
ィングであるために硬質層の付着強度が弱いなどの欠点
も合せ持っている。The physical vapor deposited hard layer formed on the surface of the tungsten carbide based cemented carbide or titanium carbonitride based cermet has excellent toughness, and the tungsten carbide based cemented carbide or titanium carbonitride based cermet having this physical vapor deposited hard layer is When used as a cutting tool tip for cutting, it has advantages such as low surface roughness of the workpiece. However, the physical vapor deposited hard layer also has drawbacks such as lower adhesion strength of the hard layer because it is coated at a lower temperature than the chemical vapor deposited hard layer.
かかる理由から、化学蒸着硬質層を第１層目に施し、第
２層目から物理蒸着硬質層を施した多層コーティング切
削工具用チップなども提案されている。For this reason, multilayer coated cutting tool tips have been proposed in which a chemical vapor deposited hard layer is applied as the first layer and a physical vapor deposited hard layer is applied as the second layer.
しかしながら、この方法で製造される多層コーティング
切削工具用チップは第１層目の化学蒸着硬質層を厚く
（例えば、１−以上）すると、化学蒸着硬質層の欠点で
ある表面の荒れが残り、また薄い化学蒸着硬質層であっ
ても化学蒸着法は一般に高温度で処理する方法であるか
ら基体からのカーボンや結合層の拡散が起り、上記化学
蒸着硬質層の上に物理蒸着硬質層を施してもコーティン
グ層全体として十分な靭性が得られず、その後の物理蒸
着硬質層の特性を十分に生かすことができなかった。However, the multilayer coated cutting tool tips manufactured by this method have a thick first chemical vapor deposited hard layer.
(For example, 1- or more), the surface will remain rough, which is a disadvantage of chemical vapor deposited hard layers, and even if the chemical vapor deposited hard layer is thin, chemical vapor deposition is generally a method of processing at high temperatures, so there will be some damage from the substrate. Diffusion of carbon and the bonding layer occurs, and even if a physical vapor deposited hard layer is applied on top of the chemical vapor deposited hard layer, sufficient toughness cannot be obtained as a whole coating layer, and the characteristics of the subsequent physical vapor deposited hard layer cannot be fully utilized. I couldn't do it.
そこで、本発明者らは、上記炭化タングステン基超硬合
金または炭窒化チタン基サーメットの表面に接合強度の
強い物理蒸着硬質層を形成することができるならば、上
記硬質層の多層コーティングを施す必要もなく、優れた
切削工具用コーティングチップを製造することができる
との予測のもとに研究を行ったところ、
炭化タングステン基超硬合金または炭窒化チタン基サー
メット基体の表面に、人工気相合成法により面積率で１
０〜５０％のダイヤモンド層を分散被覆形成し、ついで
、上記ダイヤモンド層を分散被覆形成した炭化タングス
テン基超硬合金または炭窒化チタン基サーメットの表面
に上記ダイヤモンド層の最大層厚以上の厚さを有する物
理蒸着硬質層を上記ダイヤモンド層を内包するように形
成して得られたコーティング層は、優れた耐剥離性を有
するという知見を得たのである。Therefore, the present inventors found that if it is possible to form a physical vapor deposited hard layer with strong bonding strength on the surface of the tungsten carbide-based cemented carbide or titanium carbonitride-based cermet, it is necessary to apply a multilayer coating of the hard layer. We carried out research based on the prediction that it would be possible to manufacture excellent coated tips for cutting tools without the need for artificial vapor deposition. According to the method, the area ratio is 1
0 to 50% of the diamond layer is formed as a dispersion coating, and then the surface of the tungsten carbide-based cemented carbide or titanium carbonitride-based cermet on which the diamond layer is dispersed and coated is coated with a thickness equal to or greater than the maximum layer thickness of the diamond layer. They have found that a coating layer obtained by forming a physical vapor deposited hard layer containing the diamond layer has excellent peeling resistance.
この発明は、かかる知見に基づいてなされたものであっ
て、
炭化タングステン基超硬合金または炭窒化チタン基サー
メット、上記炭化タングステン基超硬合金または炭窒化
チタン基サーメット表面に人工気相合成法により面積率
で１０〜５０％分散被覆形成されたダイヤモンド層、お
よび上記ダイヤモンド層が埋没するように上記炭化タン
グステン基超硬合金表面に形成された厚さを有する物理
蒸着硬質層からなる切削工具用コーティングチップおよ
びその製造法に特徴を有するものである。The present invention has been made based on this knowledge, and includes a tungsten carbide-based cemented carbide or a titanium carbonitride-based cermet, the surface of the tungsten carbide-based cemented carbide or titanium carbonitride-based cermet is formed by an artificial vapor phase synthesis method. A coating for a cutting tool comprising a diamond layer dispersion-coated with an area ratio of 10 to 50%, and a physical vapor deposited hard layer formed on the surface of the tungsten carbide-based cemented carbide to a thickness such that the diamond layer is embedded. It is characterized by the chip and its manufacturing method.
上記物理蒸着硬質層の具体的組成は、周期律表の４ａ、
５ａおよび６ａ族の金属の炭化物、窒化物、炭窒化物、
これら２種以上の固溶体として、ＴｉＣ，ＴｉＮ、Ｔ１
ＣＮ、ＺｒＣ，ＨｆＮ。The specific composition of the physical vapor deposited hard layer is 4a of the periodic table,
carbides, nitrides, carbonitrides of metals of groups 5a and 6a,
These two or more types of solid solutions include TiC, TiN, T1
CN, ZrC, HfN.
Ｖ Ｃ，Ｔ ａ Ｃ１Ｎ ｂ Ｃ，Ｎ ｂ Ｎ、 Ｃｒ
ａ ｃ２゜Ｍｏ２Ｃ，ＷＣ，ＺｒＣＮ、ＶＣＮ、ＴａＣ
Ｎ。V C, T a C1N b C, N b N, Cr
a c2゜Mo2C, WC, ZrCN, VCN, TaC
N.
（Ｔ１．Ｎｂ）Ｃ，（Ｔａ、Ｃｒ）ＣＮ、 （Ｎｂ、
Ｗ） Ｎ。(T1.Nb)C, (Ta,Cr)CN, (Nb,
W) N.
（Ｔ１．Ｔａ、Ｗ）ＣＮ、 （Ｈｆ、Ｖ、Ｍｏ）Ｃな
どがあり、周期律表の４ａ、５ａ族の金属の炭酸化物、
炭窒酸化物としては、Ｔ ｉ ＣＯ，Ｔ ｉ ＣＮＯ。(T1.Ta, W) CN, (Hf, V, Mo) C, etc. Carbonates of metals in groups 4a and 5a of the periodic table,
Examples of carbonitrides include T i CO and T i CNO.
ＴａＣ０，ＴａＣＮ０．ＺｒＣ０，ＺｒＣＮ０゜ＨｆＣ
０，ＨｆＣＮ０． などがある。TaC0, TaCN0. ZrC0, ZrCN0゜HfC
0, HfCN0. and so on.
上記炭化タングステン基超硬＾合金または炭窒化チタン
基サーメット表面に人工気相合成法によりダイヤモンド
層を面積率で１０〜５０％のを分散被覆形成する方法は
、上記炭化タングステン基超硬合金または炭窒化チタン
基サーメット表面の研磨前処理条件などを制御すること
により核発生密度を制御しかつダイヤモンド反応時間を
制御し、それに基づいてダイヤモンド層の面積率を制御
することができる。The method of dispersing and coating the surface of the tungsten carbide-based cemented carbide or titanium carbonitride-based cermet with a diamond layer with an area ratio of 10 to 50% by artificial vapor phase synthesis method is to By controlling the pre-polishing conditions of the titanium nitride-based cermet surface, the nucleation density and diamond reaction time can be controlled, and the area ratio of the diamond layer can be controlled based thereon.
ダイヤモンド層が面積率で１０〜５０％のを分散被覆形
成された炭化タングステン基超硬合金または炭窒化チタ
ン基サーメット表面に通常の物理蒸着法により硬質層を
形成すると、上記ダイヤモンド層は絶縁物であるから被
覆されずに先ず炭化タングステン基超硬合金または炭窒
化チタン基サーメットが露出している表面に上記硬質層
が形成され、上記硬質層の層厚が増加するにしたがって
上記ダイヤモンド層を埋没し、内部にダイヤモンドの核
を内包した物理蒸着硬質層が形成される。When a hard layer is formed by a normal physical vapor deposition method on the surface of a tungsten carbide-based cemented carbide or a titanium carbonitride-based cermet on which a diamond layer is dispersed and coated with an area ratio of 10 to 50%, the diamond layer becomes an insulator. First, the hard layer is formed on the exposed surface of the tungsten carbide-based cemented carbide or titanium carbonitride-based cermet without being coated, and as the thickness of the hard layer increases, the diamond layer is buried. , a physical vapor deposited hard layer containing diamond cores is formed.
このようにして形成された物理蒸着硬質層は耐剥離性の
優れたものである理由として上記面積率で１０〜５０％
のを分散被覆形成されたダイヤモンド層が物理蒸着硬質
層のアンカーとして作用することによるものと考えられ
る。The reason why the physical vapor deposited hard layer formed in this way has excellent peeling resistance is that the above area ratio is 10 to 50%.
This is thought to be due to the fact that the diamond layer formed by dispersion coating acts as an anchor for the physical vapor deposited hard layer.
ダイヤモンド層を面積率で１０〜５０％分散被覆形成す
る理由は、ダイヤモンド層が面積率で５０％を越えて分
散被覆形成されると、最も付着強度の高い初析ダイヤモ
ンドの上に付着強度の弱い二次または三次析出のダイヤ
モンドがブリッジを組んで形成され、付着強度の高い初
析ダイヤモンドが物理蒸着硬質層と接する割合が少なく
なるのでアンカー効果が十分に作用せず、一方、ダイヤ
モンド層が面積率で１０％未満ではダイヤモンド核の数
が少なすぎて十分なアンカー効果が望めないからである
。The reason why a diamond layer is formed as a dispersion coating with an area ratio of 10 to 50% is that when a diamond layer is formed as a dispersion coating with an area ratio of more than 50%, the adhesion strength becomes weaker on top of pro-eutectoid diamond, which has the highest adhesion strength. Secondary or tertiary precipitated diamonds are formed as bridges, and the proportion of pro-eutectoid diamond with high adhesion strength in contact with the physical vapor deposited hard layer is small, so the anchoring effect does not work sufficiently. If it is less than 10%, the number of diamond nuclei is too small and a sufficient anchoring effect cannot be expected.
ダイヤモンド層を構成するダイヤモンド粒子の大きさが
大きすぎると核発生密度が少なくなり十分なアンカー効
果が望めず、一方、ダイヤモンド粒子の大きさが小さす
ぎるとダイヤモンド粒子が凝集し易くなり、均一な分散
被覆形成が望めない。If the size of the diamond particles constituting the diamond layer is too large, the nucleation density will be low and a sufficient anchoring effect cannot be expected. On the other hand, if the size of the diamond particles is too small, the diamond particles will tend to aggregate, resulting in uniform dispersion. No coating formation can be expected.
したがって、ダイヤモンド層を構成するダイヤモンド粒
子の大きさは、１〜３−であることが望ましい。Therefore, it is desirable that the size of the diamond particles constituting the diamond layer is 1 to 3-.
つぎに、この発明を図面に基づいて具体的に説明する。Next, the present invention will be specifically explained based on the drawings.
第１図は、この発明の切削工具用コーティングチップ断
面説明図であり、第１図において、１は炭化タングステ
ン（炭窒化チタン）、２は結合相、例えば、Ｃｏ、Ｎｉ
等、３はダイヤモンド層（このダイヤモンド層とは、ダ
イヤモンド粒子が均一または不均一に分散被覆したもの
をいう）、４は物理蒸着硬質層、５は炭化タングステン
基超硬合金（炭窒化チタン基サーメット）、である。FIG. 1 is an explanatory cross-sectional view of a coating chip for a cutting tool according to the present invention. In FIG. 1, 1 is tungsten carbide (titanium carbonitride), 2 is a binder phase, for example,
etc., 3 is a diamond layer (this diamond layer refers to a coating in which diamond particles are uniformly or non-uniformly dispersed), 4 is a physical vapor deposited hard layer, and 5 is a tungsten carbide-based cemented carbide (titanium carbonitride-based cermet). ), is.
通常の結合相２および炭化タングステン（炭窒化チタン
）１からなる炭化タングステン基超硬合金（炭窒化チタ
ン基サーメット）５の表面に人工気相合成法によりダイ
ヤモンドを形成すると、まず炭化タングステン（炭窒化
チタン）１の表面にダイヤモンド粒子が形成され（一部
、結合相２にも形成される）、このダイヤモンド粒子が
面積率で１０〜５０％分散被覆形成された状態で上記人
工気相合成法によるダイヤモンドの生成を停止しダイヤ
モンド層３を形成する。ついで通常の物理蒸着法により
物理蒸着硬質層４を形成すると、第１図に示されるよう
なダイヤモンド層３を構成するダイヤモンド粒子がアン
カーとなる物理蒸着硬質層４を有する切削工具用コーテ
ィングチップが得られるのである。上記物理蒸着硬質層
４は、単層だけでなく多重層であってもよく、また人工
気相合成法によるダイヤモンド層が埋没するように厚く
する必要がある。上記物理蒸着硬質層４の厚さがダイヤ
モンド層３の最大厚さよりも薄いと、物理蒸着硬質層４
の表面からダイヤモンド粒子が突出し、被削材の表面粗
さが大きくなるので好ましくない。When diamond is formed on the surface of a tungsten carbide-based cemented carbide (titanium carbonitride-based cermet) 5 consisting of an ordinary binder phase 2 and tungsten carbide (titanium carbonitride) 5 by an artificial vapor phase synthesis method, first tungsten carbide (titanium carbonitride) Diamond particles are formed on the surface of titanium) 1 (some of them are also formed on the binder phase 2), and the above-mentioned artificial vapor phase synthesis method is performed in a state where the diamond particles are dispersed and coated with an area ratio of 10 to 50%. Diamond production is stopped and a diamond layer 3 is formed. Next, by forming a physical vapor deposited hard layer 4 by a normal physical vapor deposition method, a coated tip for a cutting tool having a physical vapor deposited hard layer 4 in which the diamond particles constituting the diamond layer 3 serve as anchors as shown in FIG. 1 is obtained. It will be done. The physical vapor deposited hard layer 4 may be not only a single layer but also a multilayer, and needs to be thick enough to bury the diamond layer formed by artificial vapor phase synthesis. When the thickness of the physical vapor deposited hard layer 4 is thinner than the maximum thickness of the diamond layer 3, the physical vapor deposited hard layer 4
Diamond particles protrude from the surface of the workpiece, which increases the surface roughness of the workpiece, which is undesirable.
つぎに、この発明を実施例に基づいて具体的に説明する
。Next, the present invention will be specifically explained based on examples.
原料粉末としていずれも平均粒径：３〜６ｔＩｍの範囲
内のＷＣ粉末、Ｔ１ＣＮ粉末、Ｔｉｃ粉末、ＴａＣ粉末
、Ｍｏ粉末およびＣｏ粉末を用意し、これら原料粉末を
Ｃｏ：９重量％、ＴａＣ＋ＴｉＣ：１９重量％。WC powder, T1CN powder, Tic powder, TaC powder, Mo powder, and Co powder, all of which have average particle diameters within the range of 3 to 6 tIm, were prepared as raw material powders, and these raw material powders were mixed with Co: 9% by weight and TaC+TiC: 19%. weight%.
残り： ＷＣ。Remaining: WC.
Ｎ１：６重量％、Ｃｏ：１２重量％、ＷＣ：１５重量％
、ＴａＣ：１０重量％、Ｍｏ：８重量％、残り：Ｔ１Ｃ
Ｎ。N1: 6% by weight, Co: 12% by weight, WC: 15% by weight
, TaC: 10% by weight, Mo: 8% by weight, remainder: T1C
N.
となるように配合し、これら２種類の配合粉末をそれぞ
れボールミルで５時間湿式混合し、乾燥したのち、１．
５ｔｏｎ／ｃ−の圧力で圧粉体にプレス成形し、圧粉体
をＩ Ｘ １Ｏ−３Ｔｏｒｒの真空中、温度：１３５０
〜１５００℃の範囲内の所定の温度に１時間保持の条件
で焼結し、上記配合組成とほぼ同一の成分組成をもつＷ
ＣＣ超超硬合金基体よびＴ１ＣＮ基サーメット基体をそ
れぞれ製造した。これら基体表面を研削加工し、その形
状をＩＳＯ規格Ｓ Ｎ Ｇ Ｎ １２０３０８およびＳ
Ｎ Ｍ Ｎ １２０３０ｇのチップに形成した。These two types of blended powders were wet mixed in a ball mill for 5 hours, dried, and then 1.
Press molded into a green compact at a pressure of 5 ton/c-, and the green compact was heated in a vacuum of I x 10-3 Torr, temperature: 1350
W that is sintered under conditions of holding at a predetermined temperature in the range of ~1500°C for 1 hour and has a component composition that is almost the same as the above-mentioned composition.
A CC cemented carbide substrate and a T1CN-based cermet substrate were each produced. The surfaces of these substrates are ground and their shapes conform to ISO standards SN G N 120308 and S
It was formed into a chip of N M N 12030 g.
これらチップを、金属Ｗフィラメントを備えた石英製反
応容器に装入し、
雰囲気圧カニ ３０Ｔｏｒｒ。These chips were placed in a quartz reaction vessel equipped with a metal W filament, and the atmospheric pressure was adjusted to 30 Torr.
基体温度ニア５０℃。Substrate temperature near 50°C.
反応ガス：ＣＨ４／Ｈ２：１．０、
の条件で、第１表に示される反応時間保持し、人工気相
合成反応を行って第１表に示される面積率（％）および
最大層圧（μ）を有するダイヤモンド層を作製した。こ
れらダイヤモンド層を有するチップの表面に、さらに、
通常の物理蒸着法により第１表に示される物理蒸着硬質
層を形成し、本発明コーティングチップ１〜１０および
比較コーティングチップ１〜４を作製した。Under the conditions of reaction gas: CH4/H2: 1.0, the artificial gas phase synthesis reaction was carried out for the reaction time shown in Table 1, and the area ratio (%) and maximum bed pressure ( A diamond layer having a diameter of .mu.) was fabricated. Furthermore, on the surface of the chip having these diamond layers,
A physical vapor deposited hard layer shown in Table 1 was formed by a conventional physical vapor deposition method to produce coating chips 1 to 10 of the present invention and comparative coating chips 1 to 4.
さらに、比較のために、ダイヤモンド層のない従来コー
ティングチップ１〜４も作製した。Furthermore, for comparison, conventionally coated chips 1 to 4 without a diamond layer were also produced.
これらコーティングチップを用いて、 被削材：ＳＮＣＭ４３９゜ 切削速度Ｖ ： １５０ ｍ／ｌ１ｉｎ 。Using these coated chips, Work material: SNCM439° Cutting speed V: 150 m/l1in.
切込みｄ ： １．５關。Depth of cut: 1.5 degrees.
送 リ ｆ ： ＯＪ ａｍ／ｒｅｖ、。Sending: OJ am/rev.
の条件にて、連続切削試験を行い、コーティングチップ
の逃げ面摩耗がＯＪｍ＋ｓに達した時を寿命とし、寿命
に達するまでの切削時間を測定し、その測定結果を第１
表に示し、さらに、その時の物理蒸着硬質層の剥離の有
無を観察してその観察結果も第１表に示した。A continuous cutting test was conducted under the following conditions, and the life was defined as the time when the flank wear of the coated tip reached OJm+s.The cutting time until the end of the life was measured, and the measurement results were
Table 1 also shows the observation results of whether or not the physical vapor deposited hard layer peeled off.
第１表に示された測定結果から、本発明コーティングチ
ップは、従来コーティングチップよりも切削寿命が長く
また硬質層の剥離もなく、さらに本発明コーティングチ
ップは比較コーティングチップよりも優れており、従来
よりも一層長寿命の切削工具用コーティングチップを提
供することができ、このコーティングチップを用いて切
削作業する際にチップの交換回数を減らし、作業効率を
向上させることができるなどの優れた効果がある。From the measurement results shown in Table 1, the coated chips of the present invention have a longer cutting life than the conventionally coated chips, and there is no peeling of the hard layer, and the coated chips of the present invention are superior to the comparative coated chips. We are able to provide coated tips for cutting tools that have a much longer lifespan, and have excellent effects such as reducing the number of tip replacements and improving work efficiency when cutting with this coated tip. be.
第１図は、この発明の切削工具用コーティングチップ断
面説明図、
１・・・炭化タングステン（炭窒化チタン）２・・・結
合相 ３・・・ダイヤモンド層４・・・物
理蒸着硬質層
５・・・炭化タングステン基超硬合金
（炭窒化チタン基サーメット）FIG. 1 is an explanatory cross-sectional view of a coating chip for a cutting tool of the present invention, 1... Tungsten carbide (titanium carbonitride) 2... Binding phase 3... Diamond layer 4... Physical vapor deposited hard layer 5.・・Tungsten carbide-based cemented carbide (titanium carbonitride-based cermet)
Claims (4)
により面積率で１０〜５０％分散被覆形成されたダイヤ
モンド層、および、 上記ダイヤモンド層が埋没するように上記炭化タングス
テン基超硬合金表面に形成された周期律表の４ａ、５ａ
および６ａ族の金属の炭化物、窒化物、炭窒化物、炭酸
化物、炭窒酸化物、並びに酸化アルミニウム、さらにこ
れらの２種以上の固溶体からなる群から選んだ１種の単
層または２種以上の多重層からなる物理蒸着層（以下、
この物理蒸着層を物理蒸着硬質層という）、 からなることを特徴とする切削工具用コーティングチッ
プ。(1) Tungsten carbide-based cemented carbide, a diamond layer formed on the surface of the tungsten carbide-based cemented carbide by an artificial vapor phase synthesis method in an area ratio of 10 to 50%, and a diamond layer so that the diamond layer is buried. 4a and 5a of the periodic table formed on the surface of the tungsten carbide-based cemented carbide
and one single layer or two or more selected from the group consisting of carbides, nitrides, carbonitrides, carbonates, carbonitrides, and aluminum oxides of group 6a metals, and solid solutions of two or more of these. A physical vapor deposition layer (hereinafter referred to as
This physical vapor deposited layer is referred to as a physical vapor deposited hard layer).
成法により面積率で１０〜５０％のダイヤモンド層を分
散被覆形成し、ついで、上記ダイヤモンド層を分散被覆
形成した炭化タングステン基超硬合金基体表面に上記ダ
イヤモンド層が埋没するような厚さを有する物理蒸着硬
質層を形成することを特徴とする切削工具用コーティン
グチップの製造法。(2) A tungsten carbide based cemented carbide in which a diamond layer with an area ratio of 10 to 50% is dispersed and coated on the surface of the tungsten carbide based cemented carbide using an artificial vapor phase synthesis method, and then the above diamond layer is dispersed and coated. A method for producing a coated tip for a cutting tool, comprising forming a physically vapor deposited hard layer having a thickness such that the diamond layer is embedded on the surface of a substrate.
より面積率で１０〜５０％分散被覆されたダイヤモンド
層、および 上記ダイヤモンド層が埋没するように上記炭窒化チタン
基サーメット表面に形成された物理蒸着硬質層からなる
ことを特徴とする切削工具用コーティングチップ。(3) titanium carbonitride-based cermet; a diamond layer dispersed and coated on the surface of the titanium carbonitride-based cermet by an artificial vapor phase synthesis method in an area ratio of 10 to 50%; A coating tip for cutting tools characterized by comprising a physical vapor deposited hard layer formed on the surface of a base cermet.
法により面積率で１０〜５０％のダイヤモンド層を分散
被覆形成し、ついで、上記ダイヤモンド層を分散被覆形
成した炭窒化チタン基サーメット基体表面に上記ダイヤ
モンド層が埋没する厚さを有する物理蒸着硬質層を形成
することを特徴とする切削工具用コーティングチップの
製造法。(4) A diamond layer with an area ratio of 10 to 50% is formed on the surface of the titanium carbonitride-based cermet by an artificial vapor phase synthesis method, and then the surface of the titanium carbonitride-based cermet substrate is coated with the diamond layer. A method for manufacturing a coated tip for a cutting tool, comprising forming a physically vapor deposited hard layer having a thickness such that the diamond layer is embedded therein.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP34043889A JPH03202206A (en) | 1989-12-28 | 1989-12-28 | Cutting tool coating chip and its manufacture |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP34043889A JPH03202206A (en) | 1989-12-28 | 1989-12-28 | Cutting tool coating chip and its manufacture |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03202206A true JPH03202206A (en) | 1991-09-04 |
Family
ID=18336965
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP34043889A Pending JPH03202206A (en) | 1989-12-28 | 1989-12-28 | Cutting tool coating chip and its manufacture |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03202206A (en) |
-
1989
- 1989-12-28 JP JP34043889A patent/JPH03202206A/en active Pending
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