JPH03201527A - Stacking boat - Google Patents
Stacking boatInfo
- Publication number
- JPH03201527A JPH03201527A JP1341235A JP34123589A JPH03201527A JP H03201527 A JPH03201527 A JP H03201527A JP 1341235 A JP1341235 A JP 1341235A JP 34123589 A JP34123589 A JP 34123589A JP H03201527 A JPH03201527 A JP H03201527A
- Authority
- JP
- Japan
- Prior art keywords
- quartz
- pipes
- silicon carbide
- semiconductor wafers
- end sections
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 77
- 239000010453 quartz Substances 0.000 claims abstract description 73
- 239000004065 semiconductor Substances 0.000 claims abstract description 26
- 235000012431 wafers Nutrition 0.000 claims abstract description 26
- 230000003014 reinforcing effect Effects 0.000 claims abstract description 21
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 21
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 21
- 238000010438 heat treatment Methods 0.000 abstract description 10
- 238000005229 chemical vapour deposition Methods 0.000 abstract description 9
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 230000000694 effects Effects 0.000 description 9
- 238000000034 method Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 2
- 230000002787 reinforcement Effects 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000012494 Quartz wool Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Landscapes
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
【発明の詳細な説明】
（１１発明の目的
［産業上の利用分野］
本発明は、複数の石英パイプをパイプ状６しくは中実の
複数の石英支柱で互いに連結して形成されたスタッキン
グボートに関し、特に、石英パイプの内部にそれぞれ化
学蒸着によって炭化珪素の皮膜が付着された炭化珪素製
の補強棒が配置されてなるスタッキングボートに関する
ものである。Detailed Description of the Invention (11) Object of the Invention [Industrial Application Field] The present invention relates to a stacking boat formed by connecting a plurality of quartz pipes to each other with a plurality of pipe-shaped or solid quartz supports. In particular, the present invention relates to a stacking boat in which reinforcing rods made of silicon carbide each having a silicon carbide film adhered thereto by chemical vapor deposition are arranged inside a quartz pipe.
［従来の技術］
従来、この種のスタッキングボートとしては、第２図に
示したスタッキングボート１０のごとく、両端部の閉鎖
された２本の石英パイプ１１Ａ、１１Ｂを両端部と中間
部とにおいてパイプ状の複数（ここでは３本）の石英支
柱１２Ａ、 １２８．１２Ｃによって互いに結合せしめ
ることにより作成されてなるものが提案されていた。[Prior Art] Conventionally, this type of stacking boat, like the stacking boat 10 shown in FIG. It has been proposed that the structure be made by connecting a plurality of (three in this case) shaped quartz pillars 12A, 128.12C to each other.
［解決すべき問題点］
しかしながら、従来のスタッキングボート且では、半導
体ウェーハＭの熱処理温度が昨今の技術革新に伴なって
石英の軟化点（すなわち１２００℃）を超えるようにな
った結果、ｆｉｔ石英パイプ１１Ａ。[Problems to be solved] However, in conventional stacking boats, as a result of recent technological innovations, the heat treatment temperature of semiconductor wafers has exceeded the softening point of quartz (i.e. 1200°C). Pipe 11A.
１１Ｂが半導体ウェーハＭの重量によってその熱処理に
際し外方へ彎曲してしまう欠点があり、また（ｉｌ）石
英パイプ１１Ａ、１１Ｂの中間部を連結する石英支柱１
２Ｇの近傍では熱ストレスが増大するため載置された半
導体ウェーハＭにスリップが生じ易い欠、屯があり、ひ
いてはｆｉｉｉｌ ｉｉｔ用寿命を延長できず、半導体
ウェーハの積載数を増加できない欠、屯があった。There is a drawback that the quartz support 11B is bent outward during heat treatment due to the weight of the semiconductor wafer M, and (il) the quartz support 1 connecting the intermediate portions of the quartz pipes 11A and 11B is
In the vicinity of 2G, thermal stress increases, so there are gaps where the semiconductor wafers M placed there are likely to slip. there were.
ちなみに、従来のスタッキングボート功では、石英パイ
プ１１Ａ、 １１Ｂの内部に石英ウールなどを介して炭
化珪素製の補強棒（図示せず）を刺入して補強すること
が提案されており、上記（１１〜（ｉｉｉｌの欠点を除
去していたが、ｆｉｖｌ製造に多大の時間および労力を
要する欠点があった。Incidentally, in the conventional stacking boat technique, it has been proposed to reinforce the quartz pipes 11A and 11B by inserting reinforcing rods made of silicon carbide (not shown) through quartz wool, etc., and the above ( Although the drawbacks of No. 11 to (iii) were eliminated, there was a drawback that manufacturing fivl required a great deal of time and effort.
そこで、本発明は、これらの欠点を除去すべく、両端部
の開放された？Ｉ ｆｆｉの石英パイプの内部にそれぞ
れ化学蒸着によって炭化珪素の皮膜が付着された炭化珪
素製の補強棒を配置することにより石英パイプを両端部
のみで石英支柱によって連結可能としてなるスタッキン
グボートを提供せんとするものである。Therefore, in order to eliminate these drawbacks, the present invention aims to eliminate these drawbacks. We provide a stacking boat in which the quartz pipes can be connected by quartz supports only at both ends by arranging reinforcing rods made of silicon carbide to which a silicon carbide film is attached by chemical vapor deposition inside each of the quartz pipes of Iffi. That is.
（２）発明の構成
Ｅ問題点の解決手段１
本発明により提供される問題点の解決手段は、「半導体
ウェーハを載置するための複数の溝部がそれぞれ形成さ
れかつ平行に配置されたＩＭ Ｅｌの石英パイプを複数
の石英支柱で互いに連結して形成してなるスタッキング
ボートにおいて１石英パイプｆｌｌＡ、１１Ｂ＋の両端
部が開放されかつ内部にそれぞれ化学蒸着によって炭化
珪素の皮膜が付着された炭化珪素製の補強棒（＋３Ａ、
１３Ｂ＋が配置されてなることを特徴とするスタッキ
ングボート」
である。(2) Structure of the Invention E Means for Solving Problem 1 The means for solving the problem provided by the present invention is "IM El in which a plurality of grooves for placing semiconductor wafers are respectively formed and arranged in parallel. In a stacking boat formed by connecting quartz pipes with a plurality of quartz supports, each of the quartz pipes fl1A and 11B+ is open at both ends, and is made of silicon carbide with a silicon carbide film adhered to the inside by chemical vapor deposition. Reinforcement rod (+3A,
It is a stacking boat characterized by a 13B+ arrangement.
［作用］
本発明にかかるスタッキングボートは、上述のＥ問題点
の解決手段］で明示したごとく、半導体ウェーハを載置
するための複数の溝部がそれぞれ形成されかつ平行に配
置された複数の石英パイプを複数の石英支柱で互いに連
結して形成されており、特に、石英パイプの両端部が開
放されかつ内部にそれぞれ化学蒸着によって炭化珪素の
皮膜が付着された炭化珪素製の補強棒が配置されてなる
ので、
（ｉ）石英の軟化点を超える温度まで石英パイプを補強
する作用
をなし、ひいては
（１１）半導体ウェーへの熱処理温度が石英の軟化点を
超えてち変形を抑制する作用
をなし、また
ｆｉｉｉ）中間部に挿入される石英支柱を除去可能とす
る作用
をなし、結果的に
ｆｉｖｌ ｉｎ用寿命を延長可能とし、かつ半導体ウェ
ーへの積載数を増加可能とする作用をなし、併せて
ｆＶ１石英パイプの両端部の閉鎖処理を回避して製造容
易とする作用
をなす。[Function] As specified in [Means for solving problem E above], the stacking boat according to the present invention includes a plurality of quartz pipes each having a plurality of grooves for placing semiconductor wafers and arranged in parallel. The quartz pipe is formed by connecting each other with a plurality of quartz supports, and in particular, both ends of the quartz pipe are open, and reinforcing rods made of silicon carbide each coated with a silicon carbide film by chemical vapor deposition are arranged inside. Therefore, (i) it acts to reinforce the quartz pipe until the temperature exceeds the softening point of quartz, and (11) it acts to suppress deformation when the heat treatment temperature for the semiconductor wafer exceeds the softening point of quartz. In addition, fiii) it has the effect of making it possible to remove the quartz pillar inserted in the intermediate part, and as a result, it has the effect of extending the life of the fivlin and increasing the number of semiconductor wafers that can be loaded on the semiconductor wafer. This serves to facilitate manufacturing by avoiding the process of closing both ends of the fV1 quartz pipe.
［実施例］
次に、本発明にかかるスタッキングボートについて、そ
の好ましい実施例を挙げ、添付図面を参照しつつ、具体
的に説明する。しかしながら、以下に説明する実施例は
、本発明の理解を容易化ないし促進イヒするために記載
されるものであって、本発明を限定するために記載され
るものではない。換言すれば、以下に説明される実施例
において開示される各要素は、本発明の精神ならびに技
術的範囲に属する全ての設計変更ならびに均等物置換を
含むちのである。[Example] Next, the stacking boat according to the present invention will be specifically described with reference to the accompanying drawings, citing preferred examples thereof. However, the examples described below are described to facilitate or promote understanding of the present invention, and are not described to limit the present invention. In other words, each element disclosed in the embodiments described below includes all design changes and equivalent substitutions that fall within the spirit and technical scope of the invention.
ユ里住ｘ皿史盈里と
第１図は、本発明のスタッキングボートの一実施例を示
すための部分断面斜視図である。FIG. 1 is a partially sectional perspective view showing an embodiment of the stacking boat of the present invention.
１！施里少贋致上
まず、第１図を参照しつつ、本発明にがかるスタッキン
グボートの一実施例について、その構成を詳細に説明す
る。1! DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS First, the structure of an embodiment of a stacking boat according to the present invention will be described in detail with reference to FIG.
ｌＯは、本発明にかかるスタッキングボートであって、
互いに対向する位置にそれぞれ複数の溝部１１ａ、 ｌ
ｌｂが形成されており半導体ウェーハＭをそれらの溝部
１１ａ、１１１）に挿入して保持するための２本の石英
パイプ１１Ａ、１１Ｂと、石英パイプ１１Ａ。IO is a stacking boat according to the present invention,
A plurality of groove portions 11a and 11a are provided at opposing positions, respectively.
Two quartz pipes 11A, 11B are formed with grooves 11A, 11B for inserting and holding the semiconductor wafer M into the grooves 11a, 111), and the quartz pipe 11A.
１１Ｂを両端部において互いに連結するための石英支柱
１２Ａ、 １２Ｂと、石英パイプ１１Ａ、１１Ｂの内部
に対してそれぞれ配設され両端部近傍まで延長されてお
り石英パイプ１１Ａ、１１Ｂを補強するための炭化珪素
製の補強棒１３Ａ、 １３Ｂとを備えている。Quartz pillars 12A and 12B are provided to connect the quartz pipes 11A and 11B to each other at both ends, and carbonized supports 12A and 12B are provided inside the quartz pipes 11A and 11B and extend to the vicinity of both ends to reinforce the quartz pipes 11A and 11B. It is equipped with silicon reinforcing rods 13A and 13B.
石英支柱１２Ａ、 １２Ｂは、パイプ状であってもよく
、また中実であってもよいが、それぞれ両端部で石英パ
イプｌＩＡ、１１Ｂに対し煽書されている。The quartz posts 12A, 12B may be pipe-shaped or solid, but are curved at both ends to the quartz pipes IIA, 11B, respectively.
補強棒１３Ａ、 １３Ｂは、化学蒸着によって炭化珪素
の皮膜が付着された炭化珪素製の棒材によって形成され
ている。このため、本発明によれば、石英パイプｌＩＡ
、１１Ｂの両端部を開放したまま放置しても、半導体ウ
ェーハＭの熱処理に際して補強棒１３Ａ、 １３Ｂから
不純物が飛散し半導体ウェーハＭを汚染してしまうこと
を回避できる。補強棒１３Ａ１３Ｂは、それぞれ両端部
が石英パイプ１１Ａ、１１Ｂの両端部の一部をそれぞれ
内部へ折返すことによって脱落することが防止されてい
る。また、？ｉ１１強捧１３Ａ、１３Ｂは、石英パイプ
１１Ａ、 １１Ｂへの挿入ののち、石英パイプ１１Ａ、
１１Ｂの両端部に対しそれぞれ短かい固定用石英パイ
プを挿入し加熱軟化せしめて溶着することにより脱落す
ることが防止されてもよい。The reinforcing rods 13A and 13B are formed of silicon carbide rods to which a silicon carbide film is attached by chemical vapor deposition. Therefore, according to the present invention, the quartz pipe lIA
, 11B are left open, it is possible to prevent impurities from scattering from the reinforcing rods 13A, 13B and contaminating the semiconductor wafer M during heat treatment of the semiconductor wafer M. Both ends of the reinforcing rods 13A and 13B are prevented from falling off by folding back a portion of both ends of the quartz pipes 11A and 11B inward, respectively. Also,? After inserting the i11 shafts 13A and 13B into the quartz pipes 11A and 11B,
It may be possible to prevent the pipe from falling off by inserting short quartz pipes for fixing into both ends of the pipe 11B, heating and softening them, and welding them.
補強棒１３Ａ、１３Ｂの横断面形状は、半円形に這い形
状の場合を図示しているが、石英パイプ１１Ａ。Although the reinforcing rods 13A and 13B have a semicircular cross-sectional shape in the figure, they are quartz pipes 11A.
１１Ｂの内周面との間に熱膨張率の差に伴なう熱膨張を
吸収できるだけのスペースが確保されている限り、円形
、多角形あるいは矩形などの所望の形状であっても差し
支えない。As long as a space sufficient to absorb the thermal expansion due to the difference in thermal expansion coefficient is secured between the inner circumferential surface of 11B and the inner circumferential surface of 11B, it may have any desired shape such as circular, polygonal, or rectangular.
工夫慶皿曵且Ｂ±
更に、第１図を全開しつつ、本発明にがかるスタッキン
グボートの一実施例について、その作用を詳細に説明す
る。Further, with full reference to FIG. 1, the operation of an embodiment of the stacking boat according to the present invention will be explained in detail.
本発明にかかるスタッキングボート耗は、石英パイプ１
１Ａ、１１Ｂの内部に対しそれぞれ炭化珪素製の補強棒
１３Ａ、 １３Ｂが配設されているので、半導体ウェー
ハＭの熱処理温度が石英の軟化点を超えるような場合で
あっても、石英パイプ１１Ａ、 １１Ｂを補強できる。The stacking boat wear according to the present invention is the quartz pipe 1
Since reinforcing rods 13A and 13B made of silicon carbide are arranged inside the quartz pipes 1A and 11B, respectively, even if the heat treatment temperature of the semiconductor wafer M exceeds the softening point of quartz, the quartz pipes 11A and 11B 11B can be reinforced.
したがって、本発明にかかるスタッキングボー１−１０
は、半導体ウェーハＭの熱処理温度が石英の軟化点を超
えるような場合であっても、石英パイプ１１Ａ、ｌＩＢ
が半導体ウェーハＭの重量によって外方へ彎曲し変形す
ることを抑制でき、また中間部から石英支柱を除去でき
る。Therefore, the stacking board 1-10 according to the present invention
Even if the heat treatment temperature of the semiconductor wafer M exceeds the softening point of quartz, the quartz pipes 11A and lIB
It is possible to suppress outward bending and deformation due to the weight of the semiconductor wafer M, and it is also possible to remove the quartz support from the intermediate portion.
結果的に、本発明にかかるスタッキングボート１０は、
耐用寿命を延長でき、かつ半導体ウェーハＭの積載数を
増加できる。As a result, the stacking boat 10 according to the present invention has the following features:
The service life can be extended and the number of semiconductor wafers M loaded can be increased.
併せて、本発明にかかるスタッキングボーＮＯは、石英
パイプｌ ＩＡ、 ｌ ＩＢの内部に配設された炭化珪
素製の補強棒１３Ａ、１３Ｂに対し化学蒸着によって炭
化珪素の皮膜が付着されているので、半導体ウェーハＭ
の熱処理に際し補強棒１３Ａ、１３Ｂから不純物が飛散
して半導体ウェーハＭを汚染することを抑制でき、ひい
ては石英パイプ１１Ａ、ｌＩＢの両端部の閉鎖処理を回
避して製造容易とできる。In addition, in the stacking bow NO according to the present invention, a silicon carbide film is attached by chemical vapor deposition to silicon carbide reinforcing rods 13A and 13B disposed inside the quartz pipes IIA and IIB. , semiconductor wafer M
During the heat treatment, it is possible to prevent impurities from scattering from the reinforcing rods 13A and 13B and contaminating the semiconductor wafer M, and furthermore, it is possible to avoid the closing treatment of both ends of the quartz pipes 11A and 11B, thereby facilitating manufacturing.
工え肚量上
なお、上述においては、補強棒１３Ａ、１３Ｂが石英パ
イプ１１Ａ、１１Ｂの内部に挿入されている場合につい
てのみ説明したが、本発明は、これに限定されるちので
はなく、補強棒が石英パイプに加え石英支柱の内部にも
挿入される場合を包摂している。For the sake of effort, in the above description, only the case where the reinforcing rods 13A and 13B are inserted into the quartz pipes 11A and 11B has been described, but the present invention is not limited to this, and the reinforcing rods This includes the case where the quartz pipe is inserted inside the quartz support as well as the quartz pipe.
（３）発明の効果
上述より明らかなように、本発明にがかるスタッキング
ボートは、上述の［問題点の解決手段］で明示したごと
く、半導体ウェーハを載置するための複数の溝部がそれ
ぞれ形成されかつ平行に配置された複数の石英パイプを
複数の石英支柱で互いに連結して形成されており、特に
、石英パイプの両端部が開放されかつ内部にそれぞれ化
学蒸着によって炭化珪素の皮膜が付着された炭化珪素製
の補強棒が配置されてなるので、
（ｉ１石英の軟化点を超える温度まで石英パイプを補強
できる効果
を有し、ひいては
ｆｉｉ）半導体ウェーハの熱処理温度が石英の軟化点を
超えてち変形を抑制可能とできる効果
を有し、また
（ｉｉｉｌ中間部に挿入される石英支柱を除去可能とで
きる効果
を有し、結果的に
ｆｉｖｌ耐用寿命を延長可能とでき、かつ半導体ウェー
への積載数を増加可能とできる効果
を有し、併せて
（Ｖ１石英パイプの両端部の閉鎖処理を回避して製造容
易とできる効果
を有する。(3) Effects of the Invention As is clear from the above, the stacking boat according to the present invention has a plurality of grooves each formed for placing semiconductor wafers, as specified in the above-mentioned [Means for solving problems]. It is formed by connecting a plurality of quartz pipes arranged in parallel to each other with a plurality of quartz supports, and in particular, both ends of the quartz pipe are open and a silicon carbide film is deposited inside each by chemical vapor deposition. Since reinforcing rods made of silicon carbide are arranged, (i1) it has the effect of reinforcing the quartz pipe up to a temperature exceeding the softening point of quartz, and (fii) it has the effect of reinforcing the quartz pipe until the temperature of the heat treatment of the semiconductor wafer exceeds the softening point of quartz. It has the effect of being able to suppress deformation, and also has the effect of making it possible to remove the quartz pillar inserted in the middle part, and as a result, the service life of fivl can be extended, and it is possible to load the semiconductor wafer. It has the effect of increasing the number of V1 quartz pipes, and also has the effect of making manufacturing easier by avoiding the process of closing both ends of the V1 quartz pipe.
第１図は本発明にがかるスクッキングボートの一実施例
を示すための部分断面斜視図、第２図は従来例を示すた
めの斜視図である。
１０・・・
１１Ａ、１１Ｂ
１１ａ、 ｌ １ｂ
１２Ａ、１２Ｂ
１３Ａ、１３Ｂ
・・・スクッキングボート
・石英パイプ
・・・溝部
・・・石英支柱
・・・補強棒FIG. 1 is a partially sectional perspective view showing an embodiment of a skooking boat according to the present invention, and FIG. 2 is a perspective view showing a conventional example. 10... 11A, 11B 11a, l 1b 12A, 12B 13A, 13B ...Scooking boat/quartz pipe...groove section...quartz support column...reinforcement rod
Claims (1)
形成されかつ平行に配置された複数の石英パイプを複数
の石英支柱で互いに連結して形成してなるスタッキング
ボートにおいて、石英パイプ（１１Ａ、１１Ｂ）の両端
部が開放されかつ内部にそれぞれ化学蒸着によって炭化
珪素の皮膜が付着された炭化珪素製の補強棒（１３Ａ、
１３Ｂ）が配置されてなることを特徴とするスタッキン
グボート。In a stacking boat formed by connecting a plurality of quartz pipes each having a plurality of grooves for placing semiconductor wafers and arranged in parallel to each other with a plurality of quartz supports, the quartz pipes (11A, 11B) A reinforcing rod made of silicon carbide (13A,
13B) is arranged.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1341235A JPH0831427B2 (en) | 1989-12-28 | 1989-12-28 | Stacking boat |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1341235A JPH0831427B2 (en) | 1989-12-28 | 1989-12-28 | Stacking boat |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03201527A true JPH03201527A (en) | 1991-09-03 |
| JPH0831427B2 JPH0831427B2 (en) | 1996-03-27 |
Family
ID=18344434
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1341235A Expired - Fee Related JPH0831427B2 (en) | 1989-12-28 | 1989-12-28 | Stacking boat |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0831427B2 (en) |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS583224A (en) * | 1981-06-29 | 1983-01-10 | Seiko Epson Corp | Quartz jig for manufacturing semiconductor device |
| JPS5918434U (en) * | 1982-07-27 | 1984-02-04 | 株式会社東芝 | Heating support stand for semiconductor substrates |
| JPS5999851U (en) * | 1982-12-25 | 1984-07-05 | 株式会社デンソー | Vehicle wiper arm holding structure |
| JPS59189622A (en) * | 1983-04-13 | 1984-10-27 | Toshiba Ceramics Co Ltd | Diffusion furnace process tube for semiconductor |
| JPS60138914A (en) * | 1983-12-26 | 1985-07-23 | Toshiba Ceramics Co Ltd | Manufacture of semiconductor diffusion furnace tube |
| JPS60189930A (en) * | 1984-03-12 | 1985-09-27 | Toshiba Ceramics Co Ltd | Wafer holding device |
| JPS61125013A (en) * | 1984-11-16 | 1986-06-12 | ヘレウス・クアルツシユメルツエ・ゲゼルシヤフト・ミツト・ベシユレンクタ−・ハフツング | Heat treating furnace for semiconductor material |
| JPS6221001U (en) * | 1985-07-22 | 1987-02-07 | ||
| JPS63225591A (en) * | 1987-03-12 | 1988-09-20 | 住友金属工業株式会社 | Manufacture of silicon carbide-coated graphite material |
-
1989
- 1989-12-28 JP JP1341235A patent/JPH0831427B2/en not_active Expired - Fee Related
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS583224A (en) * | 1981-06-29 | 1983-01-10 | Seiko Epson Corp | Quartz jig for manufacturing semiconductor device |
| JPS5918434U (en) * | 1982-07-27 | 1984-02-04 | 株式会社東芝 | Heating support stand for semiconductor substrates |
| JPS5999851U (en) * | 1982-12-25 | 1984-07-05 | 株式会社デンソー | Vehicle wiper arm holding structure |
| JPS59189622A (en) * | 1983-04-13 | 1984-10-27 | Toshiba Ceramics Co Ltd | Diffusion furnace process tube for semiconductor |
| JPS60138914A (en) * | 1983-12-26 | 1985-07-23 | Toshiba Ceramics Co Ltd | Manufacture of semiconductor diffusion furnace tube |
| JPS60189930A (en) * | 1984-03-12 | 1985-09-27 | Toshiba Ceramics Co Ltd | Wafer holding device |
| JPS61125013A (en) * | 1984-11-16 | 1986-06-12 | ヘレウス・クアルツシユメルツエ・ゲゼルシヤフト・ミツト・ベシユレンクタ−・ハフツング | Heat treating furnace for semiconductor material |
| JPS6221001U (en) * | 1985-07-22 | 1987-02-07 | ||
| JPS63225591A (en) * | 1987-03-12 | 1988-09-20 | 住友金属工業株式会社 | Manufacture of silicon carbide-coated graphite material |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0831427B2 (en) | 1996-03-27 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |