JPH03195078A - Semiconductor laser device - Google Patents
Semiconductor laser deviceInfo
- Publication number
- JPH03195078A JPH03195078A JP33740589A JP33740589A JPH03195078A JP H03195078 A JPH03195078 A JP H03195078A JP 33740589 A JP33740589 A JP 33740589A JP 33740589 A JP33740589 A JP 33740589A JP H03195078 A JPH03195078 A JP H03195078A
- Authority
- JP
- Japan
- Prior art keywords
- type
- mesa stripe
- cladding layer
- algainp
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 18
- 238000005253 cladding Methods 0.000 claims abstract description 17
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 10
- 239000000758 substrate Substances 0.000 claims abstract description 5
- 238000000034 method Methods 0.000 abstract description 4
- 239000004973 liquid crystal related substance Substances 0.000 abstract description 2
- 201000009310 astigmatism Diseases 0.000 description 6
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 5
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 4
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 1
- 238000002109 crystal growth method Methods 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- AXAZMDOAUQTMOW-UHFFFAOYSA-N dimethylzinc Chemical compound C[Zn]C AXAZMDOAUQTMOW-UHFFFAOYSA-N 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Landscapes
- Semiconductor Lasers (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、横モード制御ＡｌＧａＩｎＰ系半導体レーザ
装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a transverse mode controlled AlGaInP semiconductor laser device.
近年、ＡｌＧａＩｎＰ系半導体レーザ装置は有機金属熱
分解法（以下ＭＯＶＰＥ法と略す）という気相結晶成長
法により形成され、長寿命可視光半導体レーザ装置が実
現している（五明ら、エレクトロニクス レターズ ２
３巻（１９８７年）８５ページ；Ａ、ＧＯＭＹＯｅｔａ
ｌ、ＥＬＥｃＴＲＯＮＩｃｓ ＬＥＴＴＥＲ３゜Ｖｏ
ｌ、２３．（１９８７）、ｐ、８５参照）。In recent years, AlGaInP semiconductor laser devices have been formed by a vapor phase crystal growth method called metal organic pyrolysis (hereinafter abbreviated as MOVPE method), and long-life visible light semiconductor laser devices have been realized (Gomei et al., Electronics Letters 2).
Volume 3 (1987) page 85; A, GOMYOeta
l, ELEcTRONics LETTER3゜Vo
l, 23. (1987), p. 85).
ＭＯＶＰＥ法はトリメチルアルミニウム（ＴＭＡｌ）、
トリエチルガリウム（ＴＥＧａ）、）リメチルインジウ
ム（ＴＭＩｎ）などの有機金属蒸気及びホスフィン（Ｐ
Ｈ３）、などの水素化物ガスを原料とした気相成長法で
あり、例えば、ＡｌＧａ１ｎＰの成長はこれらＴＭＡＩ
、ＴＥＧａ、７ＭＩｎ蒸気及びＰＨ，ガスをＧａＡＳ基
板の上に導入・加熱してエピタキシャル成長を行なう、
ものである、ＡｌＧａＩｎＰ系半導体レーザ装置をレー
ザプリンタや光ディスクの読み取り装置に応用するため
には単一横モード発振することが望ましい。そのために
従来のＡｌＧａＩｎＰ系半導体レーザ装置は第３図に示
すようにｎ型ＧａＡｓ基板１上に、ｎ型ＡｌＧａＩｎＰ
からなるクラッド層２とＡｌＧａＩｎＰまたはＧａ１ｎ
Ｐからなる活性層３と、メサストライプ部を有するｐ型
ＡｌＧａＩｎＰからクラッド層４が形成され、このクラ
ッド層４の上部以外の部分、すなわち、メサストライプ
部の両側にｎ型ＧａＡｓ電流狭窄層１１が設けられてい
た（藤井ら、エレクトロニクスレターズ２３巻（１９８
７年）９３８ページ；Ｈ，ＦＵＪＩＩ、ｅｔ ａｌ、
、ＥＩＥＣＴＲＯＮＩＣ３ＬＥＴＴＥＲ３，Ｖｏ １．
２３゜（１９８７）、ｐ、９３８）、ｎ型ＧａＡｓ電流
狭窄層１１は光吸収層として働き、その結果単一横モー
ド発振する。The MOVPE method uses trimethylaluminum (TMAl),
Organometallic vapors such as triethylgallium (TEGa), trimethylindium (TMIn) and phosphine (P
This is a vapor phase growth method using hydride gases such as H3) as raw materials.For example, the growth of AlGa1nP is
, TEGa, 7MIn vapor, PH, and gas are introduced onto the GaAS substrate and heated to perform epitaxial growth.
In order to apply an AlGaInP semiconductor laser device to a laser printer or an optical disk reader, it is desirable to oscillate in a single transverse mode. For this reason, the conventional AlGaInP semiconductor laser device has n-type AlGaInP on an n-type GaAs substrate 1, as shown in FIG.
cladding layer 2 consisting of AlGaInP or Ga1n
A cladding layer 4 is formed of an active layer 3 made of P and a p-type AlGaInP having a mesa stripe portion, and an n-type GaAs current confinement layer 11 is formed on a portion other than the upper portion of the cladding layer 4, that is, on both sides of the mesa stripe portion. (Fujii et al., Electronics Letters Volume 23 (198
7 years) 938 pages; H, FUJII, et al.
, EIECTRONIC3LETTER3, Vo 1.
23° (1987), p. 938), the n-type GaAs current confinement layer 11 acts as a light absorption layer, resulting in single transverse mode oscillation.
しかしながら従来のＡｌＧａＩｎＰ系半導体レーザ装置
では、横モード制御のために光の吸収を用いているため
に、メサストライプ両脇で光の波面が遅れてしまい、非
点隔差が大きくなってしまう欠点があった。However, in conventional AlGaInP semiconductor laser devices, since light absorption is used for transverse mode control, the wavefront of light is delayed on both sides of the mesa stripe, resulting in a large astigmatism difference. Ta.
本発明の目的は、光吸収のない電流狭窄層を用いること
により非点隔差の小さい横モード制御ＡｌＧａＩｎＰ系
半導体レーザ装置を提供することにある。An object of the present invention is to provide a transverse mode controlled AlGaInP semiconductor laser device with a small astigmatism difference by using a current confinement layer that does not absorb light.
本発明の半導体レーザ装置は、少くとも、ｎ型ＧａＡｓ
基板上にｎ型ＡｌＧａＩｎＰからなるクラッド層とＧａ
ｒ ｎＰまなはＡｌＧａＩｎＰからなる活性層とメサ
ストライプ部を有するｐ型ＡｌＧａＩｎＰからなるクラ
ッド層とが順次形成されたダブルヘテロ構造体を備え、
クラッド層の上部以外の部分、すなわち、メサストライ
プ部の両脇にＺｎドープＡ１ｒｎＰ層を有することを特
徴とする構成である。The semiconductor laser device of the present invention comprises at least n-type GaAs.
A cladding layer made of n-type AlGaInP and a Ga
r nP Mana includes a double heterostructure in which an active layer made of AlGaInP and a cladding layer made of p-type AlGaInP having a mesa stripe portion are sequentially formed,
This structure is characterized by having a Zn-doped A1rnP layer on a portion other than the upper portion of the cladding layer, that is, on both sides of the mesa stripe portion.
ＡＩＩｎＰは、ＡｌＧａＩｎＰ液晶系の中で最も、バン
ドギャップが大きく屈折率が小さい。AIInP has the largest band gap and smallest refractive index among the AlGaInP liquid crystal systems.
そのためｐ型Ａ Ｉ Ｇａ Ｉ ｎＰからなるメサスト
ライプ部の両脇にＡＩＩｎＰ層を形成すると、ＧａＩｎ
ＰまたはＡｌＧａＩｎＰからなる活性層で発振するレー
ザ光の吸収がほとんどなく、非点隔差が小さくなる。ま
た、ＺｎがドーピングされたＡＩＩｎＰは高抵抗である
ために電流狭窄層としても働く。Therefore, if AIInP layers are formed on both sides of the mesa stripe made of p-type AIGaInP, GaIn
The active layer made of P or AlGaInP absorbs almost no laser light oscillated, and the astigmatism difference becomes small. Furthermore, since Zn-doped AIInP has a high resistance, it also functions as a current confinement layer.
次に、本発明について図面を用いて説明する。 Next, the present invention will be explained using the drawings.
第１図は本発明の半導体レーザ装置の一実施例を示す断
面図（切断面を示すハツチングは省略）であり、第２図
はこの半導体レーザ装置の製作工程図である。FIG. 1 is a cross-sectional view showing an embodiment of the semiconductor laser device of the present invention (hatching indicating the cut surface is omitted), and FIG. 2 is a manufacturing process diagram of this semiconductor laser device.
まず−回目の減圧ＭＯＶＰＥ法による成長で、ｎ型Ｇａ
Ａｓ基板１上に、ｎ型（Ａ １０．６０ ａ Ｏ，Ｊｏ
、５Ｉｎ、）、５Ｐクラッド層２（厚さ１μｍ）、Ｇａ
□、５Ｉｎ□、５Ｐ活性層３（厚さ０．０７．ｃｚｍ）
、ｐ型（Ａ Ｉ ０．６ Ｇ ａｏ、４） ０．５ Ｉ
ｎｏ、ｓ Ｐクラッド層４（厚さ１μｍ）、ｐ型Ｇａ
ｇ、５ Ｉ ｎｏ、５ Ｐ層５、ｐ型ＧａＡｓキャップ
層６を順次形成した（第２図（ａ））、成長条件は、温
度７００℃、圧カフ０ｔｏｒｒ、Ｖ／Ｉ［Ｉ＝２００で
あ−る。原料としては、ＴＭＡ １ 、ＴＥＧａ、ＴＭ
、Ｉ ｎ、ホスフィン、アルシン、ｎ型ドーパントとし
てジシラン、ｐ型ドーパントとしてジメチルジンクを用
いた。こうして成長したウェハにフォトリソグラフィに
より幅５μｍのストライプ状の５ｉ０２？’スク９を形
成した（第２図（ｂ））。First, in the -th low-pressure MOVPE growth, n-type Ga
On the As substrate 1, n-type (A 10.60 a O, Jo
, 5In, ), 5P cladding layer 2 (thickness 1 μm), Ga
□, 5In□, 5P active layer 3 (thickness 0.07.czm)
, p-type (A I 0.6 Gao, 4) 0.5 I
no, s P cladding layer 4 (thickness 1 μm), p-type Ga
The growth conditions were a temperature of 700°C, a pressure cuff of 0 torr, a V/I [I = 200 A-ru. Raw materials include TMA 1 , TEGa, TM
, In, phosphine, arsine, disilane as an n-type dopant, and dimethyl zinc as a p-type dopant. The wafer grown in this way is patterned with 5i02? stripes of 5 μm in width by photolithography. 9 was formed (Fig. 2(b)).
次にこの５ｉ０２マスク９を用いてｐ型（Ａｌｏ、６Ｇ
ａ６．４）ｇ、５ Ｉ ｎｏ、ｓ Ｐクラッド層４の途
中までメサ状にエツチングした（第２図（ｃ））、さら
に５ｉ０２マスク９を除去した後、２回目のＭＯＶＰＥ
成長によりＺｎドープＡＩＩｎＰ層８を全面に形成した
（第２図（ｄ））、ＺｎドープＡＩＩｎＰ層８のメサ部
両脇にレジストマスク１０を設け、ＺｎドープＡＩＩｎ
Ｐ層８のメサ上部部分をエツチングする（第２図（ｅ）
）、そして３回目のＭＯＶＰＥ成長によりｐ型ＧａＡｓ
コンタクト層７を形成した（第２図（ｆ））。この後、
電極を形成し、舅開して第１図に示す半導体レーザ装置
とした。Next, using this 5i02 mask 9, p-type (Alo, 6G
a6.4) g, 5 I no, s P The cladding layer 4 was etched halfway into the mesa shape (Fig. 2 (c)), and after removing the 5i02 mask 9, the second MOVPE was performed.
A Zn-doped AIInP layer 8 was formed on the entire surface by growth (FIG. 2(d)). Resist masks 10 were provided on both sides of the mesa portion of the Zn-doped AIInP layer 8.
Etch the upper part of the mesa of the P layer 8 (Fig. 2(e))
), and p-type GaAs is grown by the third MOVPE growth.
A contact layer 7 was formed (FIG. 2(f)). After this,
Electrodes were formed and the structure was opened to obtain a semiconductor laser device as shown in FIG.
このよ°うにして製作した本発明の半導体レーザ装置と
従来の半導体レーザ装置の非点隔差は、それぞれ５μｍ
と１０μｍであり、従来に比べ本発明の半導体レーザ装
置は非点隔差が小さくなった。また、本発明の半導体レ
ーザ装置は５ｍＷ以上まで単一横モードでレーザ発振し
た。The astigmatism difference between the semiconductor laser device of the present invention manufactured in this way and the conventional semiconductor laser device is 5 μm, respectively.
and 10 μm, and the semiconductor laser device of the present invention has a smaller astigmatism difference than the conventional one. Further, the semiconductor laser device of the present invention oscillated in a single transverse mode up to 5 mW or more.
以上説明してきたように、活性層で発振するレーザ光の
吸収が少なく、高抵抗であるＺｎドープＡＩＩｎＰ層を
、ｐ型ＡｌＧａＩｎＰからなるクラッド層のメサストラ
イプ部の両脇に埋め込むことにより、非点隔差の小さい
横モード制御ＡｌＧａＩｎＰ系半導体レーザ装置が得ら
れた。As explained above, by embedding the Zn-doped AIInP layer, which has high resistance and little absorption of the laser light oscillated in the active layer, on both sides of the mesa stripe part of the cladding layer made of p-type AlGaInP, astigmatism can be achieved. A transverse mode controlled AlGaInP semiconductor laser device with a small gap difference was obtained.
層、４・＝ｐ１１ＡｌＧａＩｎＰクラッド層、５ ・ｐ
型Ｇａ Ｉ ｎＰ層、６ ・Ｐ型ＧａＡｓキャップ層、
７・・・ｐ型ＧａＡｓコンタクト層、８・・・Ｚｎドー
プＡＩＩｎＰ層、９−・Ｓ ｉ ０２．１０−レジスト
、１１・・・ｎ型ＧａＡｓ電流狭窄層。Layer, 4.=p11AlGaInP cladding layer, 5.p
type Ga I nP layer, 6/P type GaAs cap layer,
7...p-type GaAs contact layer, 8...Zn-doped AIInP layer, 9-.S i 02.10-resist, 11... n-type GaAs current confinement layer.
Claims (1)
からなるクラッド層とＧａＩｎＰまたはＡｌＧａＩｎＰ
からなる活性層とｐ型ＡｌＧａＩｎＰからなるクラッド
層が順次形成されたダブルヘテロ構造体を備え、前記ｐ
型ＡｌＧａＩｎＰで成るクラッド層の一部がメサストラ
イプ状に形成され、このメサストライプ部の両側にＺｎ
ドープＡｌＩｎＰ層を有することを特徴とする半導体レ
ーザ装置。At least n-type AlGaInP on an n-type GaAs substrate.
A cladding layer consisting of GaInP or AlGaInP
a double heterostructure in which an active layer made of p-type AlGaInP and a cladding layer made of p-type AlGaInP are sequentially formed;
A part of the cladding layer made of type AlGaInP is formed in the shape of a mesa stripe, and Zn is formed on both sides of this mesa stripe.
A semiconductor laser device characterized by having a doped AlInP layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33740589A JP2841599B2 (en) | 1989-12-25 | 1989-12-25 | Semiconductor laser device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33740589A JP2841599B2 (en) | 1989-12-25 | 1989-12-25 | Semiconductor laser device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03195078A true JPH03195078A (en) | 1991-08-26 |
| JP2841599B2 JP2841599B2 (en) | 1998-12-24 |
Family
ID=18308326
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP33740589A Expired - Fee Related JP2841599B2 (en) | 1989-12-25 | 1989-12-25 | Semiconductor laser device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2841599B2 (en) |
-
1989
- 1989-12-25 JP JP33740589A patent/JP2841599B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2841599B2 (en) | 1998-12-24 |
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