JPH0319327A - Vertical heat treatment equipment - Google Patents
Vertical heat treatment equipmentInfo
- Publication number
- JPH0319327A JPH0319327A JP1154172A JP15417289A JPH0319327A JP H0319327 A JPH0319327 A JP H0319327A JP 1154172 A JP1154172 A JP 1154172A JP 15417289 A JP15417289 A JP 15417289A JP H0319327 A JPH0319327 A JP H0319327A
- Authority
- JP
- Japan
- Prior art keywords
- heat treatment
- wafer
- cassette
- substrate holder
- wafer cassette
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000010438 heat treatment Methods 0.000 title claims description 41
- 239000000758 substrate Substances 0.000 claims abstract description 32
- 238000012546 transfer Methods 0.000 claims description 15
- 238000012545 processing Methods 0.000 claims description 7
- 230000007246 mechanism Effects 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 abstract description 65
- 239000004065 semiconductor Substances 0.000 abstract description 20
- 239000000428 dust Substances 0.000 abstract description 10
- 238000000034 method Methods 0.000 abstract description 2
- 230000032258 transport Effects 0.000 description 7
- 239000002245 particle Substances 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 2
- 238000002791 soaking Methods 0.000 description 2
- 230000007723 transport mechanism Effects 0.000 description 2
- 101000685083 Centruroides infamatus Beta-toxin Cii1 Proteins 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000002054 transplantation Methods 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Landscapes
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
【発明の詳細な説明】 ［発明の目的］ （産業上の利用分野） 本発明は、縦型熱処理装置に関する。[Detailed description of the invention] [Purpose of the invention] (Industrial application field) The present invention relates to a vertical heat treatment apparatus.
（従来の技術）
一般に、熱処理装置は、半導体製造工程等において、基
板例えば半導体ウエハあるいはＬＣＤ基板等に対するＣ
ＶＤ膜の形成、酸化膜の形成、熱拡散等に利用される。(Prior Art) In general, heat treatment equipment is used to treat substrates such as semiconductor wafers or LCD substrates during semiconductor manufacturing processes.
It is used for forming VD films, forming oxide films, thermal diffusion, etc.
このような熱処理装置において、従来は熱処理炉をほぼ
水平に配設した横型熱処理装置が多く用いられていたが
、近年は熱処理炉をほぼ垂直に配設した縦型熱処理装置
が多く用いられるようになってきた。In the past, horizontal heat treatment equipment with a heat treatment furnace arranged almost horizontally was often used in such heat treatment equipment, but in recent years, vertical heat treatment equipment with a heat treatment furnace arranged almost vertically has been increasingly used. It has become.
すなわち、縦型熱処理装置では、例えば固筒状の石英管
、この石英管を囲繞する如く設けられた均熱管、ヒータ
、断熱材等から構威された熱処理炉がほぼ垂直に設けら
れている。また、この熱処理炉の下部には搬送装置いわ
ゆるボートエレベータが設けられており、このボートエ
レベータにより、多数の半導体ウェハを保持した処理用
基板保持具例えば石英等からなるウェハボートをほぼ垂
直状態に支持して熱処理炉内にロード・アンロードする
よう構成されている。That is, in a vertical heat treatment apparatus, a heat treatment furnace is provided almost vertically, and is composed of, for example, a solid cylindrical quartz tube, a soaking tube surrounding the quartz tube, a heater, a heat insulating material, and the like. In addition, a transport device called a boat elevator is provided at the bottom of this heat treatment furnace, and this boat elevator supports a wafer boat made of a processing substrate holder such as quartz, which holds a large number of semiconductor wafers, in an almost vertical state. It is configured to load and unload the heat treatment furnace into the heat treatment furnace.
また、半導体ウエハ等の基板の搬送に用いられる搬送用
基板保持具、例えば樹脂等からなるウェハカセットを収
容するカセット収容部およびこのカセット収容部に設け
られたウエノ＼カセットとウエハボートとの間で半導体
ウエノ＼の移載を行う移載装置を備えた縦型熱処理装置
もある。In addition, a transport substrate holder used for transporting substrates such as semiconductor wafers, for example, a cassette storage part that stores a wafer cassette made of resin or the like, and a cassette cassette provided in this cassette storage part and a wafer boat. There is also a vertical heat treatment equipment equipped with a transfer device for transferring semiconductor wafers.
このような縦型熱処理装置は、横型熱処理装置に較べて
設置面積が少ない、反応管内壁に非接触で容易にウエハ
ボートをロード◆アンロード可能である等の利点を脊す
る。Such a vertical heat treatment apparatus has advantages over a horizontal heat treatment apparatus, such as a smaller installation area and the ability to easily load and unload wafer boats without contacting the inner wall of the reaction tube.
（発明が解決しようとする課題）
上述したように縦型熱処理装置では、被処理基板例えば
半導体ウエノ＼を、ウエＩ＼カセットからウエハボート
に多数移載し、このウエノ＼ボートをほぼ垂直に設けら
れた熱処理炉に下方からロード・アンロードするよう構
成されている。したがって、従来の縦型熱処理装置では
、ウエノ＼カセットを収容するウエハカセット収容部が
床而に非常に近接して設けられており、ウエノ＼カセッ
トが低い位置に配置されることになる。(Problems to be Solved by the Invention) As described above, in the vertical heat treatment apparatus, a large number of substrates to be processed, such as semiconductor wafers, are transferred from the wafer I cassette to a wafer boat, and the wafer boats are set up almost vertically. The structure is such that it can be loaded and unloaded into the heat treatment furnace from below. Therefore, in the conventional vertical heat treatment apparatus, the wafer cassette accommodating portion for accommodating the wafer cassette is provided very close to the bed, and the wafer cassette is disposed at a low position.
しかしながら、縦型熱処理装置が配置されるクリーンル
ーム内には、一般に天井部から床部へ向けて清浄気体（
空気）流が形成されされている。However, in a clean room where vertical heat treatment equipment is installed, clean gas (
air) flow is formed.
このため、本発明者等が詳査したところ、このダウンフ
ローによりクリーンルームの床而近傍には乱流が発生し
ており、この乱流による巻上げにより、床面近傍に設け
られたウエノ＼カセット内の半導体ウエハに特に多量の
塵埃が付着することが判明した。For this reason, the inventors conducted a detailed investigation and found that this downflow generated turbulent flow near the floor of the clean room, and the winding up due to this turbulence caused the Ueno/cassette installed near the floor to It has been found that a particularly large amount of dust adheres to semiconductor wafers.
一方、近年半導体装置は高巣積化される傾向にあり、そ
の回路パターンは微細化される傾向にある。このため、
従来にも増してクリーン度を向上させることが必要とな
り、上述したような塵埃の付着は大きな問題となりつつ
ある。On the other hand, in recent years, there has been a tendency for semiconductor devices to have a high density, and their circuit patterns have also tended to be miniaturized. For this reason,
It is necessary to improve the cleanliness more than ever before, and the above-mentioned dust adhesion is becoming a major problem.
本発明は、かかる従来の事情に対処してなされたもので
、半導体ウエハ等の基板に対する塵埃の付Ｂ量を従来に
較べて減少させることができ、不良発生率を低減させて
生産性の向上を図ることのできる縦型熱処理装置を提供
しようとするものである。The present invention has been made in response to such conventional circumstances, and can reduce the amount of dust attached to substrates such as semiconductor wafers compared to the conventional method, thereby reducing the defect rate and improving productivity. The present invention aims to provide a vertical heat treatment apparatus that can achieve the following.
［発明の構或］
（課題を解決するための手段）
すなわち本発明は、ほぼ垂直に設けられた熱処理炉と、
複数の搬送用基板保持具を収容する搬送用基板保持具収
容部と゛、処理用基板保持具を搬送して前記熱処理炉内
にロード・アンロードする搬送機構と、前記搬送用基板
保持具収容部に収容された前記搬送用基板保持具と前記
処理用基板保持具との間で基板を移載する移載機構とを
備え、前記搬送用基板保持具収容部の前記搬送用基板保
持具の′ａ置位置を少なくとも床面から４０ｃ一以上の
高さに保持するよう構或したことを特徴とする。[Structure of the Invention] (Means for Solving the Problems) That is, the present invention includes a heat treatment furnace installed almost vertically,
a transport substrate holder accommodating part for accommodating a plurality of transport substrate holders; a transport mechanism for transporting the processing substrate holders and loading/unloading them into the heat treatment furnace; and a transport substrate holder accommodating part. a transfer mechanism for transferring a substrate between the substrate holder for transfer and the substrate holder for processing housed in the substrate holder for transfer; The device is characterized in that the position a is maintained at a height of at least 40c from the floor surface.
（作 用）
第４図のグラフは、天井部から床部へ向けて清浄気体（
空気）流を形成されたクリーンルーム内においてＭ１定
した６インチ半導体ウエハ表面への粒径０．３μｍ以上
の塵埃の付着数と、クリーンルーム床面からの高さとの
関係を示すものである。(Function) The graph in Figure 4 shows that clean gas (
This figure shows the relationship between the number of dust particles with a particle diameter of 0.3 μm or more attached to the surface of a 6-inch semiconductor wafer with M1 constant in a clean room with an air flow and the height from the clean room floor.
このグラフに示されるように、床面からの高さが４０ｃ
ｍより低くなると、急激に塵埃の付着数が増大する。な
お、クリーンルーム床面からの高さが４０〜ＧＯｃｍの
間では、塵埃の付着数がわずかに減少し、Ｇｏｅｓ以上
でほぼ一定となる。As shown in this graph, the height from the floor is 40c.
When it becomes lower than m, the number of attached dusts increases rapidly. Note that the number of attached dust decreases slightly when the height from the clean room floor is between 40 and GO cm, and becomes almost constant above Goes.
そこで、本発明の縦型熱処理装置では、搬送用是板保持
具例えばウエハカセットを収容するウエハカセット収容
部（搬送用基板保持具収容部）を、ウエハカセットを少
なくとも床而から４０ｃＩＩ１以上、例えば６０ＣＩ１
の高さに保持するよう構成することにより、ダウンフロ
ーによってクリーンルームの床面近傍に形威される乱流
の影響により、半１９体ウエハ等の基板に多量の塵埃が
付着することを防止する。Therefore, in the vertical heat treatment apparatus of the present invention, the wafer cassette accommodating section (transfer substrate holder accommodating section) that accommodates the transfer plate holder, for example, the wafer cassette, is set at least 40 cII1 or more, for example, 60 CI1, from the bottom of the wafer cassette.
This structure prevents a large amount of dust from adhering to substrates such as half-19 wafers due to the influence of turbulent flow near the floor of the clean room due to downflow.
（大施例）
以下、本発明の一実施例を図面を参１．ｌ Ｌで説明す
る。(Major Example) Hereinafter, an example of the present invention will be described with reference to the drawings. L will explain.
天井部から床部へ向けて清浄気体（空気）流を形成され
たクリーンルーム内に配置された縦型熱処理装置の筐体
１の上部前面には、コントロールパネル２が設けられて
おり、その後方には、例えば石英等からなる反応管およ
びこの反応管の周囲を囲繞する如く設けられた均熱管、
ヒータ、断熱材等からなる熱処理炉３がほぼ垂直に設け
られている。A control panel 2 is provided at the top front of a housing 1 of a vertical heat treatment equipment placed in a clean room in which a flow of clean gas (air) is formed from the ceiling to the floor. is a reaction tube made of, for example, quartz, and a soaking tube provided to surround the reaction tube;
A heat treatment furnace 3 consisting of a heater, a heat insulator, etc. is provided almost vertically.
また、上記熱処理炉３の下方には、上下動可能に構成さ
れた搬送機構としてボートエレベータ４が設けられてお
り、このボー゜トエレベータ４により、例えば石英等か
らなり、複数例えば百数十枚の・半導体ウエハ５を保持
可能に構或された処理用基板保持具（ウエハボート）６
を保暦筒７上にほぼ垂直に載置した状態で、熱処理炉３
に下方からロード・アンロードする如く構成されている
。Further, a boat elevator 4 is provided below the heat treatment furnace 3 as a transport mechanism configured to be able to move up and down. A processing substrate holder (wafer boat) 6 configured to hold a semiconductor wafer 5
The heat treatment furnace 3 is placed almost vertically on the maintenance cylinder 7.
It is configured such that it is loaded and unloaded from below.
さらに、筺体１の前方下部には、例えば複数２５枚の半
導体ウエハ５を保持可能に構成された複数例えば５つの
搬送用基板保持具（ウエハカセット）８ａ〜８ｅを収容
可能とする如くウエハカセット収容部９が設けられてい
る。このウエハカセット収容部９のカセット裁置位置は
、最下部に設けられたウエハカセット８ｅとクリンルー
ムの床而との距ｆｉＤが４０ｃＩ１以上例えば６０ｃｓ
＋となるように構成されており、第３図にも示すように
、回転軸９ａを中心として回動自在とされている。そし
て、このウエハカセット収容部９の側方には、ウエハカ
セット８ａ〜８ｅとウエハボート６との間で半導体ウエ
ハ５の移載を行う移載装置１０が設けられている。Furthermore, a wafer cassette is stored in the front lower part of the housing 1 so that a plurality of, for example, five transport substrate holders (wafer cassettes) 8a to 8e configured to be able to hold a plurality of 25 semiconductor wafers 5, for example, can be accommodated. A section 9 is provided. The cassette storage position of this wafer cassette storage section 9 is such that the distance fiD between the wafer cassette 8e provided at the bottom and the floor of the clean room is 40cI1 or more, for example, 60cs.
+, and as shown in FIG. 3, it is rotatable about the rotating shaft 9a. A transfer device 10 for transferring the semiconductor wafers 5 between the wafer cassettes 8a to 8e and the wafer boat 6 is provided on the side of the wafer cassette storage section 9.
上記構成の縦型熱処理装置では、第３図に示すように、
ウエハカセット収容部９を回転させ、ウエハカセット８
ａ〜８ｅを移載装置１０の方向に向けるとともに、ボー
トエレベータ４によりウエハボート６を移載装置１０の
方向に移動させ、この状態で移栽装置１０によりーまた
は複数枚ずつウエハカセット８ａ〜８ｅ内に収容された
未処理の半導体ウエハ５をウエハボート６に移載する。In the vertical heat treatment apparatus with the above configuration, as shown in Fig. 3,
Rotate the wafer cassette accommodating section 9 and place the wafer cassette 8
While directing the wafers a to 8e toward the transfer device 10, the boat elevator 4 moves the wafer boat 6 toward the transfer device 10, and in this state, the transfer device 10 transports the wafers 8a to 8e or one by one. Unprocessed semiconductor wafers 5 housed in 8e are transferred to wafer boat 6.
そして、上記移栽が終了すると、ウエＩ＼ボート６を熱
処理炉３の下方へ搬送し、熱処理炉３内にロードして所
定の処理例えばＣＶＤ膜の形成を行う。When the above-mentioned transplantation is completed, the wafer I/boat 6 is transported below the heat treatment furnace 3, loaded into the heat treatment furnace 3, and subjected to a predetermined process, such as the formation of a CVD film.
上記処理が終了すると、ウエハボート６を熱処理炉３内
からアンロードし、ウエハボート６からウエハカセット
８８〜８ｅへの半導体ウエハ５の移載を行う。When the above processing is completed, the wafer boat 6 is unloaded from the heat treatment furnace 3, and the semiconductor wafers 5 are transferred from the wafer boat 6 to the wafer cassettes 88 to 8e.
すなわち、この実施例の縦型熱処理装置では、ウエハカ
セット収容部９が、このウエハカセット収容部９の最下
部に設けられたウエハカセット８ｅとクリンルームの床
而との距ｔＩＩＤが４０ｃｍ以上例えば８０ｃｍとなる
ように構成されている。したがって、前述の第４図のグ
ラフに示したようにウエハカセット８ｅ内の半導体ウエ
ノ＼５に対する塵埃の付着量を従来に較べて減少させる
ことができ、不良発生率を低減させて生産性の向上を図
ることができる。That is, in the vertical heat treatment apparatus of this embodiment, the wafer cassette accommodating part 9 is arranged such that the distance tIID between the wafer cassette 8e provided at the lowest part of the wafer cassette accommodating part 9 and the floor of the clean room is 40 cm or more, for example, 80 cm. It is configured so that Therefore, as shown in the graph of FIG. 4 above, the amount of dust adhering to the semiconductor wafer \5 in the wafer cassette 8e can be reduced compared to the conventional method, reducing the defect rate and improving productivity. can be achieved.
［発明の効果コ
上述のように、本発明の縦型熱処理装置によれば、導体
ウエハ等の基板に対する塵埃の付着量を？，ｔｆｆｉに
較べて減少させることができ、不良発生率を低減させて
生産性の向上を図ることができる。[Effects of the Invention] As described above, according to the vertical heat treatment apparatus of the present invention, it is possible to reduce the amount of dust attached to a substrate such as a conductive wafer. , tffi, the defect rate can be reduced and productivity can be improved.
第１図は本発明の一実施例の縦型熱処理装置の構成を示
す正面図、第２図は第１図の縦型熱処理装置の側面図、
第３図は第１図の縦型熱処理装置の上面図、第４図は６
インチ半導体ウエノ＼表面への粒径０，３μｍ以上の塵
埃の付着数とクリーンルーム床面からの高さとの関係を
示すグラフである。
１・・・・・・筐体、２・・・・・・コントロールパネ
ル、３・・・・・・熱処理炉、４・・・・・・ボートエ
レベータ、５・・・・・・半”ｌウエハ、６・・・・・
・ウエハボート、７・・・・・・保温筒、８ａ〜８ｅ・
・・・・・ウエハカセット、９・・・・・・カセット収
容部、１０・・・・・・移載装置。FIG. 1 is a front view showing the configuration of a vertical heat treatment apparatus according to an embodiment of the present invention, FIG. 2 is a side view of the vertical heat treatment apparatus shown in FIG.
Figure 3 is a top view of the vertical heat treatment equipment in Figure 1, and Figure 4 is a
It is a graph showing the relationship between the number of dust particles with a particle size of 0.3 μm or more attached to the surface of an inch semiconductor wafer and the height from the clean room floor. 1... Housing, 2... Control panel, 3... Heat treatment furnace, 4... Boat elevator, 5... Half"l Wafer, 6...
・Wafer boat, 7...Insulation tube, 8a-8e・
... Wafer cassette, 9 ... Cassette storage section, 10 ... Transfer device.
Claims (1)
基板保持具を収容する搬送用基板保持具収容部と、処理
用基板保持具を搬送して前記熱処理炉内にロード・アン
ロードする搬送機構と、前記搬送用基板保持具収容部に
収容された前記搬送用基板保持具と前記処理用基板保持
具との間で基板を移載する移載機構とを備え、前記搬送
用基板保持具収容部の前記搬送用基板保持具の載置位置
を少なくとも床面から４０ｃｍ以上の高さに保持するよ
う構成したことを特徴とする縦型熱処理装置。(1) A heat treatment furnace installed almost vertically, a transport substrate holder accommodating part that accommodates a plurality of transport substrate holders, and a processing substrate holder that is transported and loaded and unloaded into the heat treatment furnace. a transfer mechanism that transfers a substrate between the substrate holder for transfer and the substrate holder for processing that are accommodated in the substrate holder for transfer housing section, A vertical heat treatment apparatus, characterized in that the mounting position of the substrate holder for transport in the holder accommodating part is maintained at a height of at least 40 cm or more from the floor surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1154172A JP2979230B2 (en) | 1989-06-16 | 1989-06-16 | Vertical heat treatment equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1154172A JP2979230B2 (en) | 1989-06-16 | 1989-06-16 | Vertical heat treatment equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0319327A true JPH0319327A (en) | 1991-01-28 |
| JP2979230B2 JP2979230B2 (en) | 1999-11-15 |
Family
ID=15578410
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1154172A Expired - Lifetime JP2979230B2 (en) | 1989-06-16 | 1989-06-16 | Vertical heat treatment equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2979230B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5464313A (en) * | 1993-02-08 | 1995-11-07 | Tokyo Electron Kabushiki Kaisha | Heat treating apparatus |
| CN114975209A (en) * | 2022-07-22 | 2022-08-30 | 智程半导体设备科技(昆山)有限公司 | Feeding equipment of semiconductor wafer single-chip cleaning machine |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6324615A (en) * | 1986-05-16 | 1988-02-02 | シリコン・バレイ・グル−プ・インコ−ポレイテッド | Method and apparatus for transferring wafer between cassette and boat |
-
1989
- 1989-06-16 JP JP1154172A patent/JP2979230B2/en not_active Expired - Lifetime
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6324615A (en) * | 1986-05-16 | 1988-02-02 | シリコン・バレイ・グル−プ・インコ−ポレイテッド | Method and apparatus for transferring wafer between cassette and boat |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5464313A (en) * | 1993-02-08 | 1995-11-07 | Tokyo Electron Kabushiki Kaisha | Heat treating apparatus |
| CN114975209A (en) * | 2022-07-22 | 2022-08-30 | 智程半导体设备科技(昆山)有限公司 | Feeding equipment of semiconductor wafer single-chip cleaning machine |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2979230B2 (en) | 1999-11-15 |
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