JPH0318913Y2 - - Google Patents
Info
- Publication number
- JPH0318913Y2 JPH0318913Y2 JP1981152099U JP15209981U JPH0318913Y2 JP H0318913 Y2 JPH0318913 Y2 JP H0318913Y2 JP 1981152099 U JP1981152099 U JP 1981152099U JP 15209981 U JP15209981 U JP 15209981U JP H0318913 Y2 JPH0318913 Y2 JP H0318913Y2
- Authority
- JP
- Japan
- Prior art keywords
- sample
- target
- substrate
- quantitative analysis
- ion beam
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 11
- 238000004445 quantitative analysis Methods 0.000 claims description 10
- 238000010884 ion-beam technique Methods 0.000 claims description 8
- 239000000126 substance Substances 0.000 claims description 7
- 239000002245 particle Substances 0.000 claims description 6
- 238000010894 electron beam technology Methods 0.000 claims description 4
- 230000001678 irradiating effect Effects 0.000 claims 2
- 239000010409 thin film Substances 0.000 description 9
- 239000002344 surface layer Substances 0.000 description 5
- 239000000956 alloy Substances 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000203 mixture Substances 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000011002 quantification Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000005211 surface analysis Methods 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
Description
【考案の詳細な説明】
本考案は高い定量分析精度を得ることのできる
オージエ定量分析装置に関するものである。[Detailed Description of the Invention] The present invention relates to an Augier quantitative analysis device that can obtain high quantitative analysis accuracy.
試料に電子線を照射した場合、試料の極表層部
より試料構成物質特有のエネルギーをもつオージ
エ電子が発生するので、このオージエ電子を適当
なエネルギーアナライザー、例えばシリンドリカ
ルミラーアナライザーによつて分析すれば、オー
ジエ電子スペクトルが得られ、試料分析が可能で
ある。これを装置化したオージエ電子分析装置は
表面分析の有効な手段として注目を浴び、急速に
普及しつつある。斯る装置において定量分析を行
う場合、被検試料と共に既知物質からなる標準試
料を試料ホルダに保持せしめ、該標準試料からの
オージエ電子スペクトルと被検試料からのそれと
を比較しなければならない。従つて、定量分析の
精度は標準試料の良否に大いに影響されるわけで
あるが、一般に試料表面は炭素や酸素により汚染
されており、表面濃度既知の標準試料を得るのは
大変困難である。そこで、従来は、試料上方にイ
オン銃を置き、標準試料面にイオンシヤワーを浴
びせ、その表層部を剥ぎ取り、内部の新鮮な試料
を露出させるように構成している。しかし乍ら、
この様なイオンビーム衝撃で試料の表層部のみを
剥ぎ取つた場合、飛び出しやすい物質(分子)が
多く飛散し、飛び出しにくい物質の残存量が多く
なり、新鮮化された試料表層部の組成は標準試料
内部の組成と違つたものになる。従つて、標準試
料の定量に誤差を生じ、定量分析の精度が低下す
ることになる。 When a sample is irradiated with an electron beam, Auger electrons with energy specific to the constituent materials of the sample are generated from the extreme surface layer of the sample, so if these Auger electrons are analyzed with an appropriate energy analyzer, such as a cylindrical mirror analyzer, Auger electron spectra can be obtained and sample analysis is possible. The Augier electronic analyzer, which is a device based on this, has attracted attention as an effective means of surface analysis and is rapidly becoming popular. When performing quantitative analysis using such an apparatus, a standard sample made of a known substance must be held in a sample holder together with the test sample, and the Auger electron spectrum from the standard sample must be compared with that from the test sample. Therefore, the accuracy of quantitative analysis is greatly influenced by the quality of the standard sample, but the surface of the sample is generally contaminated with carbon and oxygen, and it is very difficult to obtain a standard sample with a known surface concentration. Therefore, conventionally, an ion gun is placed above the sample, and an ion shower is applied to the surface of the standard sample to peel off the surface layer and expose the fresh sample inside. However,
When only the surface layer of a sample is removed by such ion beam bombardment, many substances (molecules) that are easy to jump out are scattered, and a large amount of substances that are difficult to jump out remain, and the composition of the fresh sample surface layer is standard. The composition will be different from that inside the sample. Therefore, an error occurs in the quantification of the standard sample, resulting in a decrease in the accuracy of quantitative analysis.
しかして、本考案は定量分析の精度を向上させ
得る標準試料形成手段を備えたオージエ定量分析
装置を提供することを目的とするもので、試料ホ
ルダに保持された被検試料に電子線を照射し、そ
れによつて発生するオージエ電子を分析して前記
試料の定量分析を行う装置において、試料ホルダ
上の電子線照射可能な位置に配置される標準試料
膜形成基板と、該基板には対面するが前記被検試
料には対面しないように前記試料ホルダ上に配置
される既知物質から成るターゲツトと、前記ター
ゲツトを照射するイオンビームを発生するイオン
源とを設け、イオンビーム照射に基づく前記ター
ゲツトからの飛散粒子を前記基板へ標準試料膜と
して付着させるようにしたことを特徴とするもの
である。 Therefore, the purpose of the present invention is to provide an Augier quantitative analyzer equipped with a standard sample forming means that can improve the accuracy of quantitative analysis. In an apparatus for quantitative analysis of the sample by analyzing the Auger electrons generated thereby, a standard sample film-formed substrate is placed on the sample holder at a position where electron beam irradiation is possible, and the substrate faces the substrate. A target made of a known substance is placed on the sample holder so that the sample does not face the test sample, and an ion source that generates an ion beam that irradiates the target is provided. The invention is characterized in that the scattered particles of are attached to the substrate as a standard sample film.
以下本考案の実施例を図面に基づき説明する。
第1図は本考案の一実施例の斜視図であり、1は
試料ホルダで被検試料2a,2b,2cが載置さ
れている。この被検試料と離れたホルダ上には薄
膜形成用基板3が取り付けてある。被検試料と薄
膜形成用基板との間には両者間を区切るように斜
面部材4が設けられ、その斜面4aは基板3aの
方を向いており、この上に既知物質から構成され
る合金ターゲツト5が取り付けられる。又、前記
傾斜面、従つてターゲツト5に対面する如くイオ
ン源(図示せず)が設けられ、それより発射され
たイオンビームIBが合金ターゲツト5上に投射
される。 Embodiments of the present invention will be described below based on the drawings.
FIG. 1 is a perspective view of an embodiment of the present invention, in which 1 is a sample holder on which test samples 2a, 2b, and 2c are placed. A thin film forming substrate 3 is mounted on a holder separate from the test sample. A slope member 4 is provided between the test sample and the substrate for thin film formation so as to separate the two, the slope member 4a faces toward the substrate 3a, and an alloy target composed of a known substance is placed on top of the slope member 4. 5 is attached. Further, an ion source (not shown) is provided so as to face the inclined surface, thus the target 5, and the ion beam IB emitted from the source is projected onto the alloy target 5.
この様な構成において、イオン源からのイオン
ビームIBを合金ターゲツト5上に投射すると第
2図に拡大図を示す如くターゲツト材を形成する
粒子が表層部から散乱する。この散乱した粒子の
一部はホルダ上に置かれた基板3上に付着し、薄
膜6を形成する。而してこの形成された薄膜6を
標準試料として電子線EBを照射し、オージエ分
析が行われる。この場合、ターゲツト5は継続し
たイオンビームIBの衝撃を受けて深く堀られな
がら粒子を散乱するので、飛び出しにくい物質も
全て飛散し、薄膜6を形成する。従つて、該薄膜
はターゲツト5の内部組成と極めて近似したもの
であり、この薄膜を標準試料として用いれば、定
量分析の精度を著じるしく高めることができる。 In such a configuration, when the ion beam IB from the ion source is projected onto the alloy target 5, particles forming the target material are scattered from the surface layer, as shown in an enlarged view in FIG. Some of the scattered particles adhere to the substrate 3 placed on the holder, forming a thin film 6. Then, this formed thin film 6 is used as a standard sample and irradiated with an electron beam EB to perform Auger analysis. In this case, the target 5 is continuously bombarded by the ion beam IB and is deeply excavated while scattering particles, so that all substances that are difficult to fly out are also scattered, forming a thin film 6. Therefore, the internal composition of this thin film is very similar to that of the target 5, and if this thin film is used as a standard sample, the accuracy of quantitative analysis can be significantly improved.
尚、イオンビーム照射によるターゲツト5のス
パツタリングに際し、被検試料2a,2b,2c
は斜面部材4の裏側に置かれているので、ターゲ
ツトより飛散した粒子がこれに付着することはな
い。 In addition, when sputtering the target 5 by ion beam irradiation, the test samples 2a, 2b, 2c
Since it is placed on the back side of the slope member 4, particles scattered from the target will not adhere to it.
第1図は本考案の一実施例を示す斜視図、第2
図はその要部拡大断面図である。
1……試料ホルダ、2a,2b,2c……被検
試料、3……薄膜形成用ターゲツト、4……斜面
部材、4a……傾斜面、5……合金ターゲツト、
6……薄膜。
Fig. 1 is a perspective view showing one embodiment of the present invention;
The figure is an enlarged sectional view of the main part. DESCRIPTION OF SYMBOLS 1... Sample holder, 2a, 2b, 2c... Test sample, 3... Thin film formation target, 4... Slope member, 4a... Slanted surface, 5... Alloy target,
6...Thin film.
Claims (1)
射し、それによつて発生するオージエ電子を分析
して前記試料の定量分析を行う装置において、試
料ホルダ上の電子線照射可能な位置に配置される
標準試料膜形成基板と、該基板には対面するが前
記被検試料には対面しないように前記試料ホルダ
上に配置される既知物質から成るターゲツトと、
前記ターゲツトを照射するイオンビームを発生す
るイオン源とを設け、イオンビーム照射に基づく
前記ターゲツトからの飛散粒子を前記基板へ標準
試料膜として付着させるようにしたことを特徴と
するオージエ定量分析装置。 In an apparatus that performs quantitative analysis of the sample by irradiating a test sample held in a sample holder with an electron beam and analyzing the Auger electrons generated thereby, a standard sample film-formed substrate; a target made of a known substance disposed on the sample holder so as to face the substrate but not the test sample;
An Auger quantitative analysis device, comprising: an ion source that generates an ion beam for irradiating the target, and particles scattered from the target due to ion beam irradiation are attached to the substrate as a standard sample film.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15209981U JPS5856956U (en) | 1981-10-13 | 1981-10-13 | Auger quantitative analyzer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15209981U JPS5856956U (en) | 1981-10-13 | 1981-10-13 | Auger quantitative analyzer |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5856956U JPS5856956U (en) | 1983-04-18 |
JPH0318913Y2 true JPH0318913Y2 (en) | 1991-04-22 |
Family
ID=29944765
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15209981U Granted JPS5856956U (en) | 1981-10-13 | 1981-10-13 | Auger quantitative analyzer |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5856956U (en) |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS561669U (en) * | 1979-06-19 | 1981-01-09 |
-
1981
- 1981-10-13 JP JP15209981U patent/JPS5856956U/en active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS561669U (en) * | 1979-06-19 | 1981-01-09 |
Also Published As
Publication number | Publication date |
---|---|
JPS5856956U (en) | 1983-04-18 |
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