JPH03186711A - Microdimension length measuring device - Google Patents

Microdimension length measuring device

Info

Publication number
JPH03186711A
JPH03186711A JP32670489A JP32670489A JPH03186711A JP H03186711 A JPH03186711 A JP H03186711A JP 32670489 A JP32670489 A JP 32670489A JP 32670489 A JP32670489 A JP 32670489A JP H03186711 A JPH03186711 A JP H03186711A
Authority
JP
Japan
Prior art keywords
sample
length measuring
electron beam
length
length measurement
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP32670489A
Other languages
Japanese (ja)
Inventor
Toshimichi Iwamori
岩森 俊道
Takeki Kishiyama
岸山 武樹
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Business Innovation Corp
Original Assignee
Fuji Xerox Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Xerox Co Ltd filed Critical Fuji Xerox Co Ltd
Priority to JP32670489A priority Critical patent/JPH03186711A/en
Publication of JPH03186711A publication Critical patent/JPH03186711A/en
Pending legal-status Critical Current

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  • Length-Measuring Devices Using Wave Or Particle Radiation (AREA)

Abstract

PURPOSE:To obtain an image whose visual field is wide and whose contrast is strong and to facilitate the detection of a length measuring part by providing not only a length measuring electron gun but a length measuring part detecting electron gun, and executing the length measurement and the detection of the length measuring part by each separate electron gun. CONSTITUTION:The detection of a length measuring part is executed by an electron beam 12 from a length measuring part detecting electron gun 11. At the time of detecting the length measuring part, magnification is lowered in order to display a wide visual field on a display device 8. That is, the electron beam 12 is allowed to scan a wide range on the surface of a sample 9. This electron beam 12 is made incident obliquely on the surface of the sample 9, therefore, even by low magnification, an image whose contrast is strong is obtained. Subsequently, after the length measuring part is detected, a position of a sample base 7 is adjusted so that its part comes to the center of a visual field. Also, length between two points in the length measuring part is measured by an electron beam from a measuring electron gun 2. This electron beam 3 is made incident vertically on the surface of the sample 9, therefore, the length measuring accuracy is high.

Description

【発明の詳細な説明】[Detailed description of the invention] 【産業上の利用分野】[Industrial application field]

本発明は、大規模集積回路(以下rLsIJという)の
パターンのような微細な箇所の寸法を測定する微小寸法
測長器に関するものである。
TECHNICAL FIELD The present invention relates to a micro-dimension measuring device for measuring the dimensions of microscopic parts such as patterns of large-scale integrated circuits (hereinafter referred to as rLsIJ).

【従来の技術】[Conventional technology]

微小寸法測長器は、例えば、半導体基板上に形成された
LSIのパターンの寸法(成る2点間の長さ)を測定し
たりするのに用いられる。しかし、LSIの微細化に伴
い、より一層の測長精度が要求されるようになり、近年
では光(レーザー)ではなく電子線を用いた微小寸法測
長器が開発されている。 この種の微小寸法測長器は、測長SEM (SEM :
 Scanning Electron Micros
cope)と言われ、実用上の要請から、自動測長機能
(まず測定箇所を見出し、次いで測長を行う機能)を具
えている。 第2図に、そのような従来の微小寸法測長器を示す。第
2図において、1は電子銃駆動部、2は測長用電子銃、
3は電子線、4は2次電子線、5は試料室、6は2次電
子検出器、7は試料台、8はディスプレイ装置、9はL
SI等の試料である。 電子銃駆動部1には、測長用電子銃2より電子線3を発
射するための電源回路等が収納されている。試料9に電
子m3が照射されると、2次電子が放出される。2次電
子線4は、この2次電子による電子線である。飛び出し
た2次電子を2次電子検出器6で検出し、増幅等の処理
を行なってディスプレイ装置8に表示する。 この時ディスプレイ装置8上に表示された点の明るさは
、電子線3が照射している試料9上の点での、2次電子
の放出量に応したものとなる。即ち、放出量が多いと明
るいし、少ないと暗い(なお、表示の仕方は、放出量が
多いと暗くし、少ないと明るくなるというように、逆に
することも出来る)。 電子線3が走査されて試料9上の別の点を照射すると、
その点の材質に応して2次電子が放出される。従って、
試料9がLSIの基板である場合には、表面の材質は、
形成されているLSIパターンに応して、場所により異
なるから、ディスプレイ装置8にはjiSIパターンの
像が表示されることになる。この表示された像に基づい
て、測長したい箇所の長さが測られる。 ところで、測長に先立ち、測長ずべき箇所の検出が行わ
れる。測長箇所の検出をするには、広い範囲を視野にお
さめるため、電子vA3を試料9の広い範囲にわたって
走査する。ディスプレイ装置8には、その広い範囲に対
応する像が表示される。 言い換えれば、この場合の倍率は小さい。 ディスプレイ装置8に表示される像を見ることによって
測長箇所を検出すると、その測長箇所が視野の中央に来
るように(即ち、測長箇所の像がディスプレイ装置8の
中央に来るように)試料台7を移動させる。 そうしておいて、今度は測長箇所を含む狭い範囲を走査
する。ディスプレイ装置8には、その狭い範囲が画面い
っばいに表示される。言い換えれば、大きな倍率で測長
箇所の像が表示されることになる。かくして、微小な長
さを測定することが出来る。 なお、この種の技術に関係する文献としては、例えば、
宮内 栄、生性 隆男、 Karl L、 Harri
sの「プロセス自動化ラインにおける寸法管理の実践的
応用」 (月刊Sem1conductor Worl
d 1987+ 6゜P130〜134)がある。
The minute dimension measuring device is used, for example, to measure the dimension (the length between two points) of an LSI pattern formed on a semiconductor substrate. However, with the miniaturization of LSIs, even greater precision in length measurement is required, and in recent years, minute dimension measurement devices that use electron beams rather than light (lasers) have been developed. This type of minute dimension measuring instrument is the length measuring SEM (SEM:
Scanning Electron Micros
Due to practical requirements, it is equipped with an automatic length measurement function (a function that first finds the measurement point and then measures the length). FIG. 2 shows such a conventional minute dimension measuring device. In FIG. 2, 1 is an electron gun drive unit, 2 is a length measurement electron gun,
3 is an electron beam, 4 is a secondary electron beam, 5 is a sample chamber, 6 is a secondary electron detector, 7 is a sample stage, 8 is a display device, 9 is L
This is a sample of SI etc. The electron gun drive section 1 houses a power supply circuit and the like for emitting an electron beam 3 from the length measurement electron gun 2. When the sample 9 is irradiated with electrons m3, secondary electrons are emitted. The secondary electron beam 4 is an electron beam generated by this secondary electron. The ejected secondary electrons are detected by a secondary electron detector 6, subjected to processing such as amplification, and displayed on a display device 8. The brightness of the point displayed on the display device 8 at this time corresponds to the amount of secondary electrons emitted at the point on the sample 9 that is irradiated with the electron beam 3. That is, when the amount of emission is large, it is bright, and when it is small, it is dark (note that the display can be reversed, such as making it dark when the amount of emission is large and bright when it is small). When the electron beam 3 is scanned and irradiates another point on the sample 9,
Secondary electrons are emitted depending on the material at that point. Therefore,
When sample 9 is an LSI substrate, the surface material is:
The image of the jiSI pattern is displayed on the display device 8 because it varies depending on the location depending on the LSI pattern being formed. Based on this displayed image, the length of the desired point is measured. By the way, prior to measuring the length, a location where the length should be measured is detected. To detect the length measurement point, the electron vA3 is scanned over a wide range of the sample 9 in order to cover a wide range in the field of view. The display device 8 displays an image corresponding to the wide range. In other words, the magnification in this case is small. When the length measurement point is detected by looking at the image displayed on the display device 8, the length measurement point is placed in the center of the field of view (that is, the image of the length measurement point is placed in the center of the display device 8). Move the sample stage 7. After that, a narrow range including the length measurement point is scanned. On the display device 8, the narrow range is displayed on the entire screen. In other words, the image of the length measurement location is displayed at a high magnification. In this way, minute lengths can be measured. Note that documents related to this type of technology include, for example:
Sakae Miyauchi, Takao Ise, Karl L, Harri
s “Practical Application of Dimension Control in Process Automation Lines” (Monthly Sem1conductor World
d 1987+ 6°P130-134).

【発明が解決しようとする課題】[Problem to be solved by the invention]

(問題点) しかしながら、前記した従来の微小寸法測長器には、測
長箇所の検出がやりにくいという問題点があった。 (問題点の説明) 電子線を用い、前記のようにして測長する場合、75I
II長ずべき対象に対して電子線を斜めに入射するより
も、垂直に入射した方が精度よく測定できることが知ら
れている。 ところで、測長する前には、試料9の面の広い範囲を走
査して測長箇所の検出を行うわけであるが、従来の微小
寸法測長器では、この検出にも測長用電子銃2を用いて
いた。 測長箇所の検出を行うには、明暗のコントラストの強い
像が得られることが望ましい。ところが、微小寸法測長
器の倍率を同しにセントした場合、得られる像のコント
ラストは、試料9に対して電子線3を垂直に入射させた
時の方が悪く、斜めに入射させた時の方が良いことが知
られている。また、倍率を大にした方がコントラストが
強くなることも知られている。 測長箇所検出のためには、コントラストが強くなるよう
、斜めに入射させた方が好都合である。 しかし、測長精度のアップの方を優先し、従来は第2図
のように、試料9の面に対して電子!I3が垂直に入射
するような構造とされている。そのため、測長箇所の検
出も垂直の電子&@3でやらざるを得ない。 測長箇所の検出を迅速に行うためには倍率を下げて視野
を広くする必要があるが、垂直の電子線3ではコントラ
ストが弱く、測長箇所がなかなか検出できない。倍率を
大にするとコントラストは強くできるが、視野が狭くな
ってしまい、測長箇所が視野から外れる確率が大になっ
てしまう、このような事情から、測長箇所の検出がやり
にくいものとなっていた。 本発明は、以上のような問題点を解決することを課題と
するものである。
(Problem) However, the conventional micro-dimension measuring device described above has a problem in that it is difficult to detect the length measurement point. (Explanation of the problem) When measuring the length as described above using an electron beam, 75I
It is known that measurements can be made more accurately when an electron beam is incident perpendicularly to an object that is to be elongated than obliquely. By the way, before measuring the length, a wide range of the surface of the sample 9 is scanned to detect the length measurement point, but in conventional micro-dimension measuring instruments, a length-measuring electron gun is also used for this detection. 2 was used. In order to detect the length measurement point, it is desirable to obtain an image with strong contrast between light and dark. However, when the magnification of the micro-dimension measuring device is kept the same, the contrast of the image obtained is worse when the electron beam 3 is incident perpendicularly to the sample 9, and worse when the electron beam 3 is incident obliquely to the sample 9. is known to be better. It is also known that the contrast becomes stronger when the magnification is increased. For length measurement point detection, it is more convenient to make the light incident obliquely so that the contrast is strong. However, priority was given to improving length measurement accuracy, and conventionally, as shown in FIG. The structure is such that I3 is incident vertically. Therefore, the length measurement point must be detected using vertical electron &@3. In order to quickly detect the length measurement point, it is necessary to lower the magnification and widen the field of view, but the contrast with the vertical electron beam 3 is weak, making it difficult to detect the length measurement point. Increasing the magnification can increase the contrast, but the field of view becomes narrower and the probability that the length measurement point will be out of the field of view increases.For these reasons, it becomes difficult to detect the length measurement point. was. An object of the present invention is to solve the above-mentioned problems.

【課題を解決するための手段】[Means to solve the problem]

前記課題を解決するため、本発明では、測長すべき試料
に電子線を照射する測長用電子銃と、試料から放出され
る2次電子を検出する2次電子検出器と、該2次電子検
出器からの信号により試料面の像を表示するディスプレ
イ装置とを具える微小寸法測長器において、前記試料の
面に対して斜めに入射する電子線を発射する測長箇所検
出用電子銃を設けることとした。
In order to solve the above problems, the present invention provides a length measurement electron gun that irradiates a sample to be measured with an electron beam, a secondary electron detector that detects secondary electrons emitted from the sample, and a secondary electron detector that detects secondary electrons emitted from the sample. An electron gun for detecting a length measurement point that emits an electron beam that is obliquely incident on the surface of the sample in a micro-dimension measuring device that includes a display device that displays an image of the sample surface based on a signal from an electron detector. We decided to set up a.

【作  用】[For production]

前記の構成によれば、測長用電子銃の外に測長箇所検出
用電子銃が設けられるので、測長と測長箇所の検出とを
、別々の電子銃で行うことが可能となる。 測長箇所検出用電子銃から発射される電子線は、試料の
面に対して斜めに入射するので、試料面の広い範囲を走
査した場合(つまり、倍率を低くした場合)でも、コン
トラストの強い像が得られる。 即ち、視野が広く且つコントラストの強い像が得られ、
測長箇所の検出が容易となる。
According to the above configuration, since the length measurement point detection electron gun is provided in addition to the length measurement electron gun, it is possible to measure the length and detect the length measurement point using separate electron guns. The electron beam emitted from the electron gun for length measurement point detection is incident obliquely to the surface of the sample, so even when scanning a wide range of the sample surface (in other words, when the magnification is low), it can produce strong contrast. An image is obtained. In other words, an image with a wide field of view and strong contrast can be obtained.
It becomes easy to detect the length measurement point.

【実 施 例】【Example】

以下、本発明の実施例を図面に基づいて詳細に説明する
。 第1図に、本発明の実施例にかかわる微小寸法測長器を
示す。第2図と同じ符号のものは、第2図のものに対応
している。そして、10は電子銃駆動部、11は測長箇
所検出用電子銃、12は電子線である。 構成上、従来の微小寸法測長器と異なる点は、測長箇所
を検出するための専用の電子銃であるところの、測長箇
所検出用電子銃11を設けた点である。 電子銃駆動部10には、測長箇所検出用電子銃11のた
めの電源回路等が収納されている。測長箇所検出用電子
銃11は、そこから発射される電子線12が試料9の面
に対して斜め(例、30°〜60°の角度)に入射する
ような位置に配設される。 本発明の微小寸法測長器による測長箇所の検出および測
長は、次のようにして行われる。 (1)測長箇所の検出 測長箇所の検出は、測長箇所検出用電子銃11からの電
子線12によって行う。測長箇所の検出をするには、広
い視野をディスプレイ装置8に表示させる必要がある。 従って、倍率を低くする。 つまり、電子線12では、試料9の面上の広い範囲を走
査させる。 電子線12は、試料9の面に対して斜めに入射するので
、低倍率でもコントラストの強い像が得られる。 かくして、ディスプレイ装置8には、視野が広く且つコ
ントラストの強い像が得られるから、測長箇所の検出が
容易となる。 測長箇所を検出した後、その箇所が視野の中央に来るよ
うに試料台7の位置を調節する。 (2)測長 測長箇所にある2点間の長さの測定は、測長用電子銃2
からの電子線3によって行う。電子線3は、試料9の面
に対して垂直に入射するので、測長精度が高い。 微小寸法測長器の倍率を、測長ずべき長さに応して大に
する。もし、測長箇所は視野に入っているものの、視野
の中央よりずれている場合には、試料台7の位置を微調
整して中央に移動してもよい。 なお、電子線3が垂直に入射するものであっても、倍率
が大にされているので、測長に必要とされるコントラス
トは得ることが出来る。
Embodiments of the present invention will be described in detail below with reference to the drawings. FIG. 1 shows a minute dimension measuring device according to an embodiment of the present invention. Components with the same symbols as in FIG. 2 correspond to those in FIG. 10 is an electron gun drive unit, 11 is an electron gun for length measurement point detection, and 12 is an electron beam. The difference in configuration from conventional micro-dimension measuring instruments is that a length-measuring point detection electron gun 11 is provided, which is a dedicated electron gun for detecting length-measuring points. The electron gun drive unit 10 houses a power supply circuit and the like for the length measurement point detection electron gun 11. The length measurement point detection electron gun 11 is arranged at such a position that the electron beam 12 emitted therefrom is incident obliquely (for example, at an angle of 30° to 60°) with respect to the surface of the sample 9. Detection of a length measurement location and length measurement using the minute dimension length measuring device of the present invention are performed as follows. (1) Detection of the length measurement point Detection of the length measurement point is performed using the electron beam 12 from the length measurement point detection electron gun 11. In order to detect the length measurement point, it is necessary to display a wide field of view on the display device 8. Therefore, reduce the magnification. That is, the electron beam 12 scans a wide range on the surface of the sample 9. Since the electron beam 12 is obliquely incident on the surface of the sample 9, an image with strong contrast can be obtained even at low magnification. In this way, since an image with a wide field of view and strong contrast can be obtained on the display device 8, the length measurement point can be easily detected. After detecting the length measurement point, the position of the sample stage 7 is adjusted so that the point is in the center of the field of view. (2) Length measurement To measure the length between two points at the length measurement location, use the length measurement electron gun 2.
This is done using an electron beam 3 from . Since the electron beam 3 is incident perpendicularly to the surface of the sample 9, the length measurement accuracy is high. Increase the magnification of the micro-dimension measuring device according to the length to be measured. If the length measurement point is within the field of view but is shifted from the center of the field of view, the position of the sample stage 7 may be finely adjusted and moved to the center. Note that even if the electron beam 3 is incident perpendicularly, the contrast required for length measurement can be obtained because the magnification is large.

【発明の効果】【Effect of the invention】

以上述べた如く、本発明によれば、測長箇所検出用電子
銃が別途設けられ、測長箇所の検出が、試料の面に対し
て斜めに入射する電子線で行われるので、試料面の広い
範囲を走査した場合(つまり、倍率を低くした場合)で
も、コントラストの強い像が得られる。 従って、視野が広く且つコントラストの強い像が得られ
、測長箇所の検出が容易となる。
As described above, according to the present invention, the electron gun for detecting the length measurement point is separately provided, and the detection of the length measurement point is performed with an electron beam incident obliquely to the surface of the sample. Even when scanning a wide range (that is, at low magnification), images with strong contrast can be obtained. Therefore, an image with a wide field of view and strong contrast can be obtained, and the length measurement point can be easily detected.

【図面の簡単な説明】[Brief explanation of drawings]

第1図・・・本発明の実施例にかかわる微小寸法測長器 第2図・・・従来の微小寸法測長器 図において、■は電子銃駆動部、2は測長用電子銃、3
は電子線、4は2次電子線、5は試料室、6は2次電子
検出器、7は試料台、8はディスプレイ′!!!装置、
9は試料、10は電子銃駆動部、11は測長箇所検出用
電子銃、12は電子線である。
Fig. 1: Microscopic length measuring device according to an embodiment of the present invention Fig. 2: In the diagram of a conventional microscopic length measuring device, ■ is an electron gun drive section, 2 is an electron gun for length measurement, and 3
is an electron beam, 4 is a secondary electron beam, 5 is a sample chamber, 6 is a secondary electron detector, 7 is a sample stage, and 8 is a display'! ! ! Device,
9 is a sample, 10 is an electron gun drive unit, 11 is an electron gun for length measurement point detection, and 12 is an electron beam.

Claims (1)

【特許請求の範囲】[Claims] 測長すべき試料に電子線を照射する測長用電子銃と、試
料から放出される2次電子を検出する2次電子検出器と
、該2次電子検出器からの信号により試料面の像を表示
するディスプレイ装置とを具える微小寸法測長器におい
て、前記試料の面に対して斜めに入射する電子線を発射
する測長箇所検出用電子銃を設けたことを特徴とする微
小寸法測長器。
A length measurement electron gun that irradiates the sample to be measured with an electron beam, a secondary electron detector that detects secondary electrons emitted from the sample, and an image of the sample surface based on the signal from the secondary electron detector. A micro-dimension measuring device comprising a display device for displaying a display device, characterized in that the micro-dimension measuring device is provided with an electron gun for detecting a length measurement point that emits an electron beam obliquely incident on the surface of the sample. Long vessels.
JP32670489A 1989-12-16 1989-12-16 Microdimension length measuring device Pending JPH03186711A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP32670489A JPH03186711A (en) 1989-12-16 1989-12-16 Microdimension length measuring device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP32670489A JPH03186711A (en) 1989-12-16 1989-12-16 Microdimension length measuring device

Publications (1)

Publication Number Publication Date
JPH03186711A true JPH03186711A (en) 1991-08-14

Family

ID=18190742

Family Applications (1)

Application Number Title Priority Date Filing Date
JP32670489A Pending JPH03186711A (en) 1989-12-16 1989-12-16 Microdimension length measuring device

Country Status (1)

Country Link
JP (1) JPH03186711A (en)

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