JPH03181848A - Apparatus for evaluating semiconductor material - Google Patents
Apparatus for evaluating semiconductor materialInfo
- Publication number
- JPH03181848A JPH03181848A JP32306189A JP32306189A JPH03181848A JP H03181848 A JPH03181848 A JP H03181848A JP 32306189 A JP32306189 A JP 32306189A JP 32306189 A JP32306189 A JP 32306189A JP H03181848 A JPH03181848 A JP H03181848A
- Authority
- JP
- Japan
- Prior art keywords
- foreign matter
- semiconductor material
- wafer
- foreign
- operated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000463 material Substances 0.000 title claims abstract description 37
- 239000004065 semiconductor Substances 0.000 title claims abstract description 35
- 238000007689 inspection Methods 0.000 claims abstract description 21
- 238000011156 evaluation Methods 0.000 claims description 13
- 238000004458 analytical method Methods 0.000 abstract description 9
- 238000000034 method Methods 0.000 abstract description 3
- 238000010894 electron beam technology Methods 0.000 description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 13
- 229910052710 silicon Inorganic materials 0.000 description 13
- 239000010703 silicon Substances 0.000 description 13
- 239000000758 substrate Substances 0.000 description 13
- 239000000126 substance Substances 0.000 description 10
- 238000005259 measurement Methods 0.000 description 9
- 238000010586 diagram Methods 0.000 description 7
- 238000001514 detection method Methods 0.000 description 6
- 239000000523 sample Substances 0.000 description 4
- 239000002245 particle Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 2
- 238000004876 x-ray fluorescence Methods 0.000 description 2
- 239000002253 acid Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
Landscapes
- Analysing Materials By The Use Of Radiation (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
Description
【発明の詳細な説明】
〈産業上の利用分野〉
本発明は半導体材料の表面に付着した異物の有無を検査
するとともにその成分の分析を自動的に行う半導体材料
評価装置に関する。DETAILED DESCRIPTION OF THE INVENTION <Industrial Application Field> The present invention relates to a semiconductor material evaluation device that inspects the presence or absence of foreign matter adhering to the surface of a semiconductor material and automatically analyzes its components.
〈従来の技術〉
従来、シリコン基板上に付着した異物の分析を行う方法
としては次のようなものが掲げられる。<Prior Art> Conventionally, the following methods have been proposed for analyzing foreign substances adhered to a silicon substrate.
まず、市販のＬＳＩ用ウェハー異物検査装置を用いてシ
リコン基板上の異物の有無をその全範囲にわたって検査
し、異物の像を当該シリコン基板の形状図形とともにプ
リントアウトする。そしてシリコン基板を光学顕微鏡に
セットし、プリントアウトされたものを参考にしながら
、シリコン基板上の異物を探し出して観察する。その後
、シリコン基板を分析装置にセットする。なお、現在の
段階では、半導体製造上、問題とされる異物の大きさは
サブごクロンオーダであり、この制限を受けて、分析装
置としては像分解能の高い電子顕微鏡を有する電子線プ
ローブマイクロアナライザやオージェ電子分光分析装置
等が採用されている。First, the presence or absence of foreign matter on a silicon substrate is inspected over its entire range using a commercially available LSI wafer foreign matter inspection device, and an image of the foreign matter is printed out together with the shape of the silicon substrate. The silicon substrate is then placed in an optical microscope, and using the printout as a reference, foreign matter on the silicon substrate is detected and observed. After that, the silicon substrate is set in the analyzer. At the current stage, the size of foreign particles that pose a problem in semiconductor manufacturing is on the sub-micron order, and due to this limitation, analysis equipment such as electron beam probe microanalyzers and electron microscopes with high image resolution are being used. Auger electron spectrometers and the like are used.
そして、分析装置に付属の電子顕微鏡を用いてシリコン
基板上の異物の確認を行い、これが行われると、分析装
置を動作させ、シリコン基板上に付着した全ての表面付
着物の分析測定を行う。Then, foreign matter on the silicon substrate is confirmed using an electron microscope attached to the analyzer, and once this is done, the analyzer is operated to analyze and measure all the surface deposits that have adhered to the silicon substrate.
〈発明が解決しようとする課題〉
しかしながら、上記従来例による場合には、次に述べる
ような諸欠点が指摘されている。即ち、ウェハー異物検
査装置によりシリコン基板上の異物の付着箇所が判ると
はいえ、その後、作業者が光学顕微鏡や電子顕微鏡等を
操作してシリコン基板に付着した異物を確認する必要が
あり、異物の大きさがミクロンオーダを下回っているこ
とも考慮に入れると、当該作業は煩わしいものとなって
いる。特に、シリコン基板に付着した全ての異物の成分
の傾向が判らないことには意味がないので、上記作業の
煩わしさはシリコン基板を円滑に検査する上で大きな支
障となる。<Problems to be Solved by the Invention> However, in the case of the conventional example described above, various drawbacks as described below have been pointed out. In other words, although a wafer foreign matter inspection device can determine the location of foreign matter on a silicon substrate, a worker must then operate an optical microscope, an electron microscope, etc. to confirm the foreign matter that has adhered to the silicon substrate. Taking into account that the size of the micrometer is less than the micron order, this work becomes troublesome. In particular, since there is no point in not knowing the trends of all the components of foreign substances attached to the silicon substrate, the troublesomeness of the above-mentioned work becomes a major hindrance in smoothly inspecting the silicon substrate.
また、電子線プローブマイクロアナランザやオージェ電
子分光分析装置であれば、シリコン基板に付着した異物
の組成が電子線の照射により変化することこともあり、
正確な成分分析を行う上でも妨げとなり得る。In addition, in the case of an electron beam probe microanalyzer or Auger electron spectrometer, the composition of foreign substances attached to the silicon substrate may change due to electron beam irradiation.
This may also hinder accurate component analysis.
第３図を参照して更に詳しく説明する。この図では電子
線プローブマイクロアナライザ５０の内部にてウェハー
４０に付着した異物４１に電子線Ｃが照射され、異物４
１から所定角度で出た電子線ｄがディテクタ５１により
検出されている様子が示されている。即ち、電子線プロ
ーブマイクロアナライザ５０により異物４１の分析測定
を行う場合には、ビームである電子線Ｃの照射位置を微
調整し、電子線Ｃがウェハー４０上の異物４１に電子線
Ｃが正確に照射される必要があり、分析すべき異物４１
が多数あるならば、この調整だけでも非常に大変である
。This will be explained in more detail with reference to FIG. In this figure, an electron beam C is irradiated onto a foreign material 41 attached to a wafer 40 inside an electron beam probe microanalyzer 50, and the foreign material 41 is irradiated with an electron beam C.
The electron beam d emitted from the electron beam 1 at a predetermined angle is detected by the detector 51. That is, when analyzing and measuring foreign matter 41 using the electron beam probe microanalyzer 50, the irradiation position of the electron beam C is finely adjusted so that the electron beam C hits the foreign matter 41 on the wafer 40 accurately. Foreign matter that needs to be irradiated and analyzed 41
If there are many, this adjustment alone is extremely difficult.
本発明は上記事情に鑑みて創案されたものであり、その
目的とするところは、半導体材料の表面に付着した異物
の正確な分析を自動的に行うことができる半導体材料評
価装置を提供することにある。The present invention was devised in view of the above circumstances, and its purpose is to provide a semiconductor material evaluation device that can automatically perform accurate analysis of foreign substances attached to the surface of a semiconductor material. It is in.
〈課題を解決するための手段〉
本発明にかかる半導体材料評価装置は、評価されるべき
半導体材料の表面に付着した異物の有無を検査するとと
もに当該異物の付着箇所を与える座標値をデータとして
出力する異物検査装置と、前記半導体材料を移動させる
移動ステージと、移動後の半導体材料上の異物の成分を
測定する全反射蛍光Ｘ線分析装置とを具備しており、前
記異物検査装置から出力された座標値のデータに基づい
て前記移動ステージを動作させるようにしである。<Means for Solving the Problems> The semiconductor material evaluation apparatus according to the present invention inspects the presence or absence of foreign matter attached to the surface of the semiconductor material to be evaluated, and outputs coordinate values indicating the attachment location of the foreign matter as data. The device is equipped with a foreign matter inspection device that moves the semiconductor material, a movement stage that moves the semiconductor material, and a total internal reflection fluorescent X-ray analyzer that measures the components of foreign matter on the semiconductor material after the movement. The movable stage is operated based on the data of the coordinate values determined.
〈作用〉
まず、異物検査装置を動作させると、これにセットされ
た半導体材料に付着した異物の有無が検査される。異物
があるときには更に異物の付着箇所を示す座標値のデー
タが出力される。このデータに基づいて移動ステージが
動作すると、半導体材料が全反射蛍光Ｘ線分析装置に運
ばれ、その後全反射蛍光Ｘ線分析装置の内部において半
導体材料上の異物がＸ線照射位置に位置合わせをされる
。<Operation> First, when the foreign matter inspection device is operated, the presence or absence of foreign matter adhering to the semiconductor material set therein is inspected. If a foreign object is present, coordinate value data indicating the location of the foreign object is also output. When the moving stage operates based on this data, the semiconductor material is transported to the total internal reflection fluorescent X-ray analyzer, and then inside the total internal reflection fluorescent X-ray analyzer, the foreign matter on the semiconductor material is aligned to the X-ray irradiation position. be done.
そして全反射蛍光Ｘ線分析装置を動作させると、Ｘ線が
異物に照射され、当該異物の成分の測定が行われる。そ
して全反射蛍光Ｘ線分析装置で未だ成分測定が行われて
いない異物があるときには、当該異物に対してＸ線を照
射するべく、移動ステージを動作させ、同様の過程を経
て異物の成分の測定を行う。When the total internal reflection fluorescent X-ray analyzer is operated, the foreign object is irradiated with X-rays, and the components of the foreign object are measured. If there is a foreign object whose components have not yet been measured using the total internal reflection fluorescence X-ray analyzer, the moving stage is operated to irradiate the foreign object with X-rays, and the components of the foreign object are measured through the same process. I do.
〈実施例〉
以下、本発明にかかる半導体材料評価装置の一実施例を
図面を参照して説明する。第１図は半導体材料評価装置
の簡略構成図、第２図は全反射蛍光Ｘ線分析装置の内部
にてウェハー上の異物にＸ線が照射されている様子を示
す模式図である。<Example> Hereinafter, an example of the semiconductor material evaluation apparatus according to the present invention will be described with reference to the drawings. FIG. 1 is a simplified configuration diagram of a semiconductor material evaluation apparatus, and FIG. 2 is a schematic diagram showing how a foreign substance on a wafer is irradiated with X-rays inside the total internal reflection fluorescent X-ray analyzer.
ここに掲げる半導体材料評価装置は、ウェハー異物検査
装置ｌＯ１全反射蛍光Ｘ線分析装置２０、移動ステージ
３０とを組み合わせた装置であり、ウェハー４０に付着
した異物４１の成分分析を正確に自動的に行うような基
本構成となっている。まず、ウェハー異物検査装置１０
について説明する。The semiconductor material evaluation device described here is a device that combines a wafer foreign matter inspection device IO1, a total internal reflection fluorescent X-ray analyzer 20, and a moving stage 30, and can accurately and automatically analyze the components of foreign matter 41 attached to a wafer 40. The basic configuration is as follows. First, wafer foreign matter inspection device 10
I will explain about it.
ウェハー異物検査装置１０は、既存の装置であるが故に
、内部の様子については図示省略されているが、移動ス
テージ３０上にセットされたウェハー４０（半導体材料
に相当する）の表全面にわたって光ビームを走査照射し
、これから反射した光ビームをディテクタにより検出し
、ウェハー４０に付着した異物４１に関する情報を信号
として出力するような構成となっている。ウェハー異物
検査装置１０にて出力された信号の中にはウェハー４０
上の異物４１の有無を示すデータと、異物４１が有る場
合にはこの全てについての座標値の数値データが含まれ
ており、図外のマイクロコンピュータに逐次導入されて
いる。Since the wafer foreign matter inspection device 10 is an existing device, the internal state is not shown, but a light beam is applied over the entire surface of a wafer 40 (corresponding to a semiconductor material) set on a moving stage 30. The configuration is such that a light beam is scanned and irradiated, a light beam reflected from the light beam is detected by a detector, and information regarding the foreign matter 41 attached to the wafer 40 is output as a signal. Some of the signals output from the wafer foreign matter inspection device 10 include the wafer 40
It includes data indicating the presence or absence of foreign matter 41 on the top and, if there is foreign matter 41, numerical data of coordinate values for all of the foreign matter 41, and is successively introduced into a microcomputer (not shown).
マイクロコンピュータは氷室装置の全体を制御するメイ
ンプログラムが予め格納されており、これにはウェハー
４０に付着した異物４１に関する情報をもとに移動ステ
ージ３０を動作させる命令を生成する機能が含まれてい
る。The microcomputer is pre-stored with a main program that controls the entire Himuro apparatus, and this includes a function to generate a command to operate the moving stage 30 based on information regarding the foreign matter 41 attached to the wafer 40. There is.
移動ステージ３０はウェハー４０をウェハー異物検査装
置ＩＯの測定位置と全反射蛍光Ｘ線分析装置２０の測定
位置とにかけて交互に移動させるとともに、ウェハー異
物検査装置１０、全反射蛍光Ｘ線分析装置２０に・夫々
窓められたＸ−Ｙ座標系、Ｘ’ −Ｙ’座標系について
ウェハー４０を位置決め制御するような基本構成となっ
ている。なお、ウェハー異物検査装置１０、全反射蛍光
Ｘ線分析装置２０が平行配置されている関係上、Ｘ−Ｙ
座標系、Ｘ’ −Ｙ’座標系における各軸方向は互いに
平行となっている。The movement stage 30 alternately moves the wafer 40 between the measurement position of the wafer foreign matter inspection device IO and the measurement position of the total internal reflection X-ray fluorescence spectrometer 20, and also moves the wafer 40 between the measurement position of the wafer foreign matter inspection device 10 and the total internal reflection X-ray fluorescence spectrometer 20. - The basic configuration is such that the positioning of the wafer 40 is controlled with respect to the X-Y coordinate system and the X'-Y' coordinate system, which are respectively windowed. Note that since the wafer foreign matter inspection device 10 and the total internal reflection fluorescent X-ray analyzer 20 are arranged in parallel, the X-Y
The axis directions in the coordinate system and the X'-Y' coordinate system are parallel to each other.
更に詳しく説明すると、図中３１はＸ−Ｙテーブルであ
りその中央部にはウェハー４０が位置決め可能に装着で
きるようになっている。Ｘ−Ｙテーブル３１はペース板
Ｘ軸用サーボモータ３２１に連結された移動テーブル３
２と、Ｙ軸周サーボモータ３３１に連結された移動テー
ブル３３とから構成され、板状のベース板３４上に取付
けられている。ベース板３４はガイド部材３５によりＹ
軸方向に移動自在となっている上に、この側面にはガイ
ド部材３５と同じ方向にボール螺子３６が貫通するよう
になっている。ボール螺子３６の片側にはモータ（図示
せず）が連結されており、モータを動作させるとボール
螺子３６が回転することにより、ベース板３４がＹ軸方
向に交互に移動するようになっている。To explain in more detail, numeral 31 in the figure is an X-Y table, and a wafer 40 can be mounted in the center thereof in a positionable manner. The X-Y table 31 is a moving table 3 connected to a pace plate X-axis servo motor 321.
2 and a moving table 33 connected to a Y-axis circumferential servo motor 331, and is mounted on a plate-shaped base plate 34. The base plate 34 is
In addition to being movable in the axial direction, a ball screw 36 passes through this side surface in the same direction as the guide member 35. A motor (not shown) is connected to one side of the ball screw 36, and when the motor is operated, the ball screw 36 rotates, thereby causing the base plate 34 to move alternately in the Y-axis direction. .
また、ベース板３４の手前側面中央部には上下方向に位
置決めＶ溝３４１が形成されており、このＶ溝３４１に
は、ガイド部材３５に対して平行に且つ互い間隔を開け
て配置された位置検出用接触センサ３７ａ 、３７ｂの
ノツチ先端部（図外）が入り込むようになっている。位
置検出用接触センサ３７ａ 、３７ｂの各検出信号のデ
ータは、上記マイクロコンピュータに逐次導入されてお
り、上記モータの停止のタイミングを与えるべく利用さ
れている。Further, a positioning V groove 341 is formed in the vertical direction in the center of the front side of the base plate 34, and this V groove 341 has positions arranged parallel to the guide member 35 and spaced apart from each other. The notch tips (not shown) of the detection contact sensors 37a and 37b are inserted into the notches. The data of each detection signal from the position detection contact sensors 37a and 37b is sequentially introduced into the microcomputer and is used to provide timing for stopping the motor.
即ち、モータを駆動させると、ウェハー４０が全反射蛍
光Ｘ線分析装置２０側からウェハー異物検査装置１０側
に移動し、その後、位置検出用接触センサ３７ａのノツ
チ先端部がベース板３４の■溝３４１に入り込むと、こ
のタイミングでモータが停止する。That is, when the motor is driven, the wafer 40 moves from the total internal reflection fluorescent X-ray analyzer 20 side to the wafer foreign object inspection apparatus 10 side, and then the notch tip of the position detection contact sensor 37a is inserted into the groove of the base plate 34. 341, the motor stops at this timing.
すると、ウェハー４０はウェハー異物検査装置ｌＯの上
記測定位置に位置決めされ、これでウェハー４０のＸ−
Ｙテーブル３１によるＸ−Ｙ座標系についての位置決め
制御が行われる状態となる。Then, the wafer 40 is positioned at the measurement position of the wafer foreign matter inspection device IO, and the wafer 40 is now
A state is entered in which positioning control regarding the X-Y coordinate system by the Y table 31 is performed.
一方、モータを上記とは逆方向に駆動させると、ウェハ
ー４０がウェハー異物検査装置ｌＯ側から全反射蛍光Ｘ
線分析装置２０側に移動し、その後、位置検出用接触セ
ンサ３７ｂのノツチ先端部がベース板３４のＶ溝３４１
に入り込むと、このタイミングでモータが停止する。す
ると、ウェハー４０は全反射蛍光Ｘ線分析装置２０の上
記測定位置に位置決めされ、これでウェハー４０のｘ−
Ｙテーブル３１によるＸ′Ｙ′座標系についての位置決
め制御が行われる状態となる。On the other hand, when the motor is driven in the opposite direction to the above, the wafer 40 is exposed to the total reflected fluorescent light
The notch tip of the position detection contact sensor 37b is moved to the line analyzer 20 side, and then the notch tip of the position detection contact sensor 37b is inserted into the V-groove 341 of the base plate 34.
When the motor enters the position, the motor will stop at this timing. Then, the wafer 40 is positioned at the measurement position of the total internal reflection fluorescent X-ray analyzer 20, and the x-
A state is reached in which positioning control regarding the X'Y' coordinate system by the Y table 31 is performed.
次に、全反射蛍光Ｘ線分析装置２０について説明する。Next, the total internal reflection fluorescent X-ray analyzer 20 will be explained.
全反射蛍光Ｘ線分析装置２０は、ウェハー異物検査装置
１０と同じく既存の装置であって、第２図に示すように
移動ステージ３０上にセットされたウェハー４０の表面
に対して所定角度で側方からＸ ｔＩｓａを照射し、こ
れから出た特性Ｘ線すをシンチレータ２１により検出し
、ウェハー４０に付着した複数（図示例では４個）の異
物４１の酸分に関するデータを信号として出力するよう
に構成となっている。The total internal reflection fluorescent X-ray analyzer 20 is an existing device similar to the wafer foreign object inspection device 10, and as shown in FIG. X tIsa is irradiated from the side, the characteristic X-rays emitted from the X-rays are detected by the scintillator 21, and data regarding the acid content of a plurality of (four in the illustrated example) foreign particles 41 attached to the wafer 40 is output as a signal. The structure is as follows.
この信号は上記マイクロコンピュータに逐次導入されて
いる。This signal is sequentially introduced into the microcomputer.
上記のように構成された半導体材評価装置の動作説明を
行う。The operation of the semiconductor material evaluation apparatus configured as described above will be explained.
まず、ウェハー４０を移動ステージ３０にセットした後
、移動ステージ３０を動作させて、ウェハー４０をウェ
ハー異物検査装２１０の測定位置に位置決めする。また
、必要であればＸ−Ｙテーブル３１を動作させてウェハ
ー４０をＸ−Ｙ座標系において位置決め制御する。その
後、ウェハー異物検査装置１０を動作させ、ウェハー４
０に異物４１が無ければ、マイクロコンピュータ４０に
接続されたデイスプレィ（図示せず）等に異物４１が無
い旨の表示を行うが、異物４１があればこの全てについ
てｘ−Ｙ座標系による座標値のデータをマイクロコンピ
ュータ４０の所定メモリに格納する。そして移動ステー
ジ３０を動作させ、ウェハー４０を全反射蛍光Ｘ線分析
装置２０の測定位置に位置決めする。これと前後して、
異物４１のＸ−Ｙ座標系による座標値のデータを全てｘ
’−ｙ’座標系による座標値のデータにローレンツ変換
し、所定のメモリに格納する。First, after setting the wafer 40 on the moving stage 30, the moving stage 30 is operated to position the wafer 40 at the measurement position of the wafer foreign object inspection device 210. Further, if necessary, the X-Y table 31 is operated to control the positioning of the wafer 40 in the X-Y coordinate system. After that, the wafer foreign matter inspection device 10 is operated, and the wafer 4
If there is no foreign object 41 at 0, a display (not shown) connected to the microcomputer 40 will display that there is no foreign object 41, but if there is a foreign object 41, the coordinate values of all the foreign objects 41 will be displayed in the x-y coordinate system. data is stored in a predetermined memory of the microcomputer 40. Then, the moving stage 30 is operated to position the wafer 40 at the measurement position of the total internal reflection fluorescent X-ray analyzer 20. Around this time,
All the data of the coordinate values of the foreign object 41 in the X-Y coordinate system are
The data is Lorentz-transformed into coordinate value data based on the '-y' coordinate system and stored in a predetermined memory.
ところで、全反射蛍光Ｘ線分析装置２０では第２図に示
すようにシンチレータ２１の大きさに対応する領域を一
度に測定することができる。それ故、車室装置において
は、ウェハー４０を全反射蛍光Ｘ線分析装置２０のＸ’
−Ｙ’座標系による測定可能領域毎に分割し、異物４Ｉ
が存在する領域ごとにＸ線ａを照射するようにしている
。By the way, the total internal reflection fluorescent X-ray analyzer 20 can measure an area corresponding to the size of the scintillator 21 at one time, as shown in FIG. 2. Therefore, in the vehicle interior device, the wafer 40 is
- Divide into measurable areas based on the Y' coordinate system, and
The X-ray a is irradiated to each area where the .
より具体的には、メモリに格納された異物４１のＸ’−
Ｙ’座標系による座標値のデータを上記測定可能領域に
対応する座標エリアごとに検索し、当該座標エリアに異
物４１が存在すれば、当該測定可能領域にＸ線ａを照射
するべく Ｘ−Ｙテーブル３１を動作させる。これを繰
り返すと、ウェハー４０に付着した異物４１の全てにつ
いての成分分析が全反射蛍光Ｘ線分析装置２０により行
われる。この測定分析のデー・夕は逐次上記マイクロコ
ンピュータに導かれ、ここでウェハー４０に付着した異
物４１の分析結果を上記デイスプレィ等に表示し、併せ
てウェハー４０の材料評価が行なわれる。これでウェハ
ー４０の分析測定が終了する。More specifically, X'- of the foreign object 41 stored in the memory
The coordinate value data according to the Y' coordinate system is searched for each coordinate area corresponding to the measurable area, and if a foreign object 41 is present in the coordinate area, X-Y is used to irradiate the measurable area with X-ray a. The table 31 is operated. By repeating this, the total internal reflection fluorescent X-ray analyzer 20 performs component analysis on all of the foreign particles 41 attached to the wafer 40. The data and data of this measurement and analysis are sequentially sent to the microcomputer, where the analysis results of the foreign matter 41 attached to the wafer 40 are displayed on the display, etc., and the material of the wafer 40 is also evaluated. This completes the analysis and measurement of the wafer 40.
なお、本発明にかかる半導体材料評価装置は上記実施例
に限定されず、移動ステージについては構造簡略化の観
点から、ターンテーブルを応用した形態を採っても良い
。Note that the semiconductor material evaluation apparatus according to the present invention is not limited to the above-mentioned embodiment, and from the viewpoint of structural simplification, a turntable may be used as the movable stage.
〈発明の効果〉
以上、本発明にかかる半導体材料評価装置による場合に
は、装置構成上、半導体材料の表面に付着した異物の分
析を自動的に行うことができ、従来のように煩わしい作
業を行う必要が無い。また、半導体材料上の全ての異物
の組成分析をするにあたり、−度に測定することができ
る範囲が大きいので、異物の大きさに関係なく、半導体
材料側と全反射蛍光ｘ、１分析装置側との位置合わせを
非常に楽にすることができる。しかも電子線ではなくＸ
線が異物に照射されるようになっているので、異物の正
確な成分分析を行う上でも非常に大きなメリットがある
。<Effects of the Invention> As described above, in the case of the semiconductor material evaluation device according to the present invention, due to the device configuration, it is possible to automatically analyze foreign substances attached to the surface of the semiconductor material, and the troublesome work required in the conventional method is eliminated. There's no need to do it. In addition, when analyzing the composition of all foreign substances on semiconductor materials, since the range that can be measured is large, regardless of the size of the foreign substances, it is possible to analyze the composition of all foreign substances on the semiconductor material side, total internal reflection fluorescence This makes positioning very easy. Moreover, it is not an electron beam but an X
Since the beam is irradiated onto the foreign object, there is a great advantage in performing accurate component analysis of the foreign object.
第１図及び第２図は本発明にかかる半導体材料評価装置
の一実施例を説明するための図であって、第１図は半導
体材料評価装置の簡略構成図、第２図は全反射蛍光Ｘ線
分析装置の内部にてウェハー上の異物にＸ線が照射され
ている様子を示す模式図である。第３図は従来の半導体
材料評価装置の欠点を説明するための図であって、説明
するための図であって、電子線マイクロアナライザの内
部にてウェハー上の異物に電子線が照射されている様子
を示す模式図である。
１０・
２０・
３０・
４０・
４１・
ウェハー異物検査装置
全反射蛍光Ｘ線分析装置
移動ステージ
ウェハー
異物1 and 2 are diagrams for explaining one embodiment of the semiconductor material evaluation apparatus according to the present invention, in which FIG. 1 is a simplified configuration diagram of the semiconductor material evaluation apparatus, and FIG. 2 is a total internal reflection fluorescence FIG. 2 is a schematic diagram showing how a foreign substance on a wafer is irradiated with X-rays inside the X-ray analyzer. FIG. 3 is a diagram for explaining the shortcomings of the conventional semiconductor material evaluation apparatus, and is a diagram for explaining, in which foreign matter on a wafer is irradiated with an electron beam inside an electron beam microanalyzer. FIG. 10. 20. 30. 40. 41. Wafer foreign matter inspection device Total internal reflection fluorescence X-ray analyzer Moving stage Wafer foreign matter
Claims (1)
の有無を検査するとともに当該異物の付着箇所を与える
座標値をデータとして出力する異物検査装置と、前記半
導体材料を移動させる移動ステージと、移動後の半導体
材料上の異物の成分を測定する全反射蛍光Ｘ線分析装置
とを具備しており、前記異物検査装置から出力された座
標値のデータに基づいて前記移動ステージを動作させる
ことを特徴とする半導体材料評価装置。(1) A foreign matter inspection device that inspects the presence or absence of foreign matter attached to the surface of a semiconductor material to be evaluated and outputs coordinate values indicating the attachment point of the foreign matter as data, and a moving stage that moves the semiconductor material; and a total internal reflection fluorescent X-ray analyzer for measuring foreign matter components on the semiconductor material after movement, and operating the moving stage based on coordinate value data output from the foreign matter inspection device. Features of semiconductor material evaluation equipment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1323061A JPH07119717B2 (en) | 1989-12-12 | 1989-12-12 | Semiconductor material evaluation equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1323061A JPH07119717B2 (en) | 1989-12-12 | 1989-12-12 | Semiconductor material evaluation equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03181848A true JPH03181848A (en) | 1991-08-07 |
| JPH07119717B2 JPH07119717B2 (en) | 1995-12-20 |
Family
ID=18150657
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1323061A Expired - Fee Related JPH07119717B2 (en) | 1989-12-12 | 1989-12-12 | Semiconductor material evaluation equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH07119717B2 (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08220005A (en) * | 1995-02-14 | 1996-08-30 | Mitsubishi Electric Corp | Method and apparatus for analyzing minute foreign matter, and manufacture of semiconductor element or liquid crystal display element using the method and apparatus |
| US5877035A (en) * | 1995-02-14 | 1999-03-02 | Mitsubishi Denki Kabushiki Kaisha | Analyzing method and apparatus for minute foreign substances, and manufacturing methods for manufacturing semiconductor device and liquid crystal display device using the same |
| JP2004170092A (en) * | 2002-11-18 | 2004-06-17 | Hitachi Electronics Eng Co Ltd | Surface inspection method and surface inspection apparatus |
| US7852982B2 (en) | 2008-01-21 | 2010-12-14 | Toppan Printing Co., Ltd. | Test method |
| JP2013036793A (en) * | 2011-08-05 | 2013-02-21 | Sii Nanotechnology Inc | X-ray analyzing apparatus and method |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5833154A (en) * | 1981-08-24 | 1983-02-26 | Hitachi Ltd | Inspecting device |
-
1989
- 1989-12-12 JP JP1323061A patent/JPH07119717B2/en not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5833154A (en) * | 1981-08-24 | 1983-02-26 | Hitachi Ltd | Inspecting device |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08220005A (en) * | 1995-02-14 | 1996-08-30 | Mitsubishi Electric Corp | Method and apparatus for analyzing minute foreign matter, and manufacture of semiconductor element or liquid crystal display element using the method and apparatus |
| US5877035A (en) * | 1995-02-14 | 1999-03-02 | Mitsubishi Denki Kabushiki Kaisha | Analyzing method and apparatus for minute foreign substances, and manufacturing methods for manufacturing semiconductor device and liquid crystal display device using the same |
| US6124142A (en) * | 1995-02-14 | 2000-09-26 | Seiko Instruments, Inc. | Method for analyzing minute foreign substance elements |
| US6255127B1 (en) | 1995-02-14 | 2001-07-03 | Seiko Instruments Inc. | Analyzing method and apparatus for minute foreign substances, and manufacturing methods for manufacturing semiconductor device and liquid crystal display device using the same |
| US6355495B1 (en) | 1995-02-14 | 2002-03-12 | Mitsubishi Denki Kabushiki Kaisha | Method and apparatus for analyzing minute foreign substance, and process for semiconductor elements or liquid crystal elements by use thereof |
| JP2004170092A (en) * | 2002-11-18 | 2004-06-17 | Hitachi Electronics Eng Co Ltd | Surface inspection method and surface inspection apparatus |
| US7852982B2 (en) | 2008-01-21 | 2010-12-14 | Toppan Printing Co., Ltd. | Test method |
| US8358735B2 (en) | 2008-01-21 | 2013-01-22 | Toppan Printing Co., Ltd. | Test method and test device |
| JP2013036793A (en) * | 2011-08-05 | 2013-02-21 | Sii Nanotechnology Inc | X-ray analyzing apparatus and method |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH07119717B2 (en) | 1995-12-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP0146005A2 (en) | Surface defect inspecting apparatus | |
| US9074992B2 (en) | X-ray diffraction apparatus and X-ray diffraction measurement method | |
| CN102680505B (en) | X-Ray Analyzer | |
| JP2609594B2 (en) | Defect inspection equipment | |
| US20040129859A1 (en) | Method and apparatus for scanning a specimen using an optical imaging system | |
| US4650334A (en) | Optical straightness gauge and method | |
| JP5235447B2 (en) | X-ray analyzer and X-ray analysis method | |
| JP3101257B2 (en) | Method for inspecting sample surface and X-ray analyzer using the same | |
| CN1040251C (en) | Method and apparatus for background correction in analysis of specimen surface | |
| JPH03181848A (en) | Apparatus for evaluating semiconductor material | |
| JP2964137B2 (en) | X-ray fluorescence analyzer that can detect the center of a sample | |
| JPH03156947A (en) | Method and apparatus for inspection | |
| JP3514555B2 (en) | Foreign matter evaluation device and foreign matter evaluation method | |
| JP3257571B2 (en) | Foreign object analysis method and foreign object analyzer | |
| KR200155175Y1 (en) | Examining apparatus of particle on wafer | |
| JP3584066B2 (en) | Measuring device for position coordinates of foreign matter on rotating body | |
| JPH02276902A (en) | Height inspection device | |
| JPH08102478A (en) | Crystal defect detecting equipment | |
| JP3377109B2 (en) | X-ray beam width measurement method | |
| JPH1123482A (en) | Method for adjusting irradiation position with beam, foreign matter detecting apparatus using laser beam, scanning electron microscope and composition analyzing apparatus | |
| JPH067108B2 (en) | Foreign substance inspection device performance check method | |
| JPH07140085A (en) | Surface measurement method for semiconductor wafer | |
| JPH10123068A (en) | Method for detecting position of foreign matter, method for analyzing foreign matter, and device for analyzing foreign matter | |
| JPS6385431A (en) | Fluorometric analysis instrument for trace sample | |
| JPH10213556A (en) | Device and method for analyzing surface element |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20071220 Year of fee payment: 12 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20081220 Year of fee payment: 13 |
|
| LAPS | Cancellation because of no payment of annual fees |