JPH03180022A - Aligner - Google Patents

Abstract

PURPOSE:To improve workability and reliability and to automate exposure by performing the control of an exposure means and the control of the relative movement of a material to be exposed and an exposure mechanism based on the graphic data which are read out for the exposure. CONSTITUTION:The kinds of graphic data for exposure of a wafer 2 that is a material to be exposed and the position of the exposure are defined in layout data. The data are read out of a memory part 14 with a control computer 13. The data are transferred into one of buffer memories 12a and 12b. The control computer 13 moves and controls a sample stage 1 through a sample control part 15 based on the layout data so that the element forming region of the wafer 2 enters into the deflecting region of an electron beam 4. An operating part 11 is further controlled, and the graphic data in the buffer memory 12a are selected based on the layout data. The control of the profile of the photoelectric plane of the electron beams 4, the control of focusing and the control of deflection are performed based on the graphic data. Thus, the setting of the exposing conditions is automated, and the workability and the reliability can be improved.

Description

[Detailed Description of the Invention] [Field of Industrial Application] The present invention relates to exposure technology, and in particular to an exposure technology that is effective when applied to circuit pattern transfer technology in the manufacturing process of semiconductor devices such as wafers. .

[Conventional technology]

For example, when exposing a semiconductor wafer (hereinafter referred to as a wafer) with a circuit pattern according to the loft, etc., conventionally, all semiconductor elements on the wafer were the same, so -batch transfer exposure was used. .

However, in recent years, as circuit patterns have become finer, instead of the conventional batch transfer exposure, reduction exposure technology that reduces and exposes the pattern on the reticle for each semiconductor element, or Electron beam direct exposure technology, which directly exposes graphic information, has come into use.

By the way, the present inventor has studied automation of exposure in high-mix, low-volume production of logic semiconductor devices and the like.

That is, when manufacturing logic circuits in a wide variety of products in small quantities, the semiconductor devices mounted on one wafer are not all the same, but rather multiple types of semiconductor devices are mounted to improve manufacturing efficiency. In this case, in the reduction exposure technique, an operator sequentially performs exposure while setting and exchanging reticles based on work instructions attached to a wafer holding case. In addition, in the electron beam direct exposure technology, the operator selects the array information stored in the memory of the electron beam exposure device based on the work instructions attached to the wafer holding case, and responds accordingly. The figure data is read out and exposed.

Furthermore, Japanese Patent Application No. 55-41793, for example, proposes a technique for automating exposure after setting a wafer, in which a mark attached to a wafer is read in advance to search for and activate a corresponding data file.

[Problem to be solved by the invention]

However, as mentioned above, the conditions are manually input during exposure, which makes the exposure operation complicated, and if there is an input error, there is a risk that graphic data other than the specified type may be exposed. This impairs work efficiency and causes a decrease in yield and reliability. There is also the risk of setting the reticle incorrectly. On the other hand, in the aforementioned Japanese Patent Application No. 55-41793, which aims to reduce manual input,
The mark on the wafer cannot be read until after it has been attached to the exposure equipment and operated, and if it is attached incorrectly, the wafer must be replaced after detection, which still leaves elements that hinder work efficiency. The inventors have discovered that.

Therefore, an object of the present invention is to automate the setting of exposure conditions,
The objective is to provide technology that can improve workability and reliability.

The above objects and novel features of the present invention will become apparent from the description of this specification and the accompanying drawings.

[Means to solve the problem]

A brief overview of typical inventions disclosed in this application is as follows.

That is, an exposure means that exposes the exposed layer that is controlled by the exposed object by controlling an exposure mechanism that determines the exposure position, etc., and specific information that is handled integrally with the exposed object. a reading means for reading; a data reading means for reading graphic data for exposure based on the content read by the reading means; and a control of the exposing means based on the graphic data by the data reading means, and a control of the object to be exposed and the object to be exposed. and control means for moving relative to the exposure mechanism.

[Effect]

According to the above means, specific information attached to the object to be exposed in some form is read by the reading means, data corresponding to the information is read from the storage section, and the exposure mechanism of the exposure means is controlled and It controls the movement of the object to be exposed (or the exposure mechanism) and exposes the circuit pattern required by each semiconductor element. Therefore, the necessary controls for data reading and exposure are automatically performed, eliminating the need for manual input operations as in the past, and improving workability and reliability as well as automation.

[Embodiment 1] FIG. 1 is a block diagram showing an embodiment of an exposure apparatus according to the present invention.

A wafer 2 as an object to be exposed is set on a sample stage 1 using an X-Y stage, and an electron beam direct exposure device as an exposure means is disposed above the wafer 2. This electron beam direct exposure apparatus includes an electron beam source 3 that generates an electron beam 4.
, a shaper 5 for shaping the photoelectron surface into a desired shape, an objective lens 6 for focusing on the surface of the wafer 2, and a deflector 7 for deflecting the electron beam 4 and controlling the irradiation position.

In order to control each of the shaper 5, objective lens 6, and deflector 7, a shaper control section 8, a lens control section 9, and a deflection control section 10 are provided.

A calculation unit 11 is provided for each of the molding machine control unit 8, the lens control unit 9, and the deflection control unit 10, and provides a control signal according to the graphic pattern.The calculation unit 11 includes a buffer memory for storing graphic data. 12a and 12b are connected. Buffer memo! J12a, 12b and calculation unit 11
A control calculation unit 1a13 is connected to which controls the device in an integrated manner. This control computer 13 includes a storage unit 14 that is configured using a hard disk device, etc., stores graphic information to be exposed on the wafer 2, and a sample stage control unit that moves the sample stage 1 in the x-y direction. 15. A preliminary alignment section 16 for positioning the wafer 2 (position in the X-Y direction and circumferential direction) prior to exposure, a manual section 17 for manually giving various instructions, and a section attached to the wafer 2. a reading unit 18 as a reading means for reading the information by optical, magnetic, or electrical means depending on the recording form;
are connected to each other.

The information added to the wafer 2 to be exposed is made so that it is possible to read the recorded object (for example, information (for example, lower) number recorded on a magnetic card) attached to the holding case of the wafer 2. It is configured. For example, by recognizing the loft number, the construction start instruction data and drawing history data in the data file are known, and it is possible to identify the product type name from the construction start instruction data and the drawing layer name from the drawing history data. As a result, as will be described later, automatic selection of drawing data and exposure reticle becomes possible.

Note that information can be added not only to magnetic cards but also by using recordable recording media, so when reusing something that was originally intended for other purposes, it is necessary to It has the advantage of being able to be added.

Next, the operation of the first embodiment with the above configuration will be explained.

First, after the rotation and offset of the wafer 2 having the configuration shown in FIG. 2 are adjusted by the preliminary alignment section 16, the wafer 2 is transferred to the sample stage l by a transport means (not shown).

Next, the control computer 13 reads out array data from the storage section 14 in which the type of graphic data to be exposed on the wafer 2 and the exposure position are defined.

The control computer 13 moves the sample stage 1 based on the read array data, and buffers the graphic data to be exposed to the desired element formation area of the wafer 2 placed on the sample stage 1. 112a or 12b. Incidentally, in the past, the reading process from the storage section 14 to the control computer 13 was performed manually by an operator operating the input section 17. Then, for example, in the area P+ in FIG.
Assuming that is the desired element formation region, the deflection positioning of the electron beam 4 with respect to this and the graphic data to be exposed in the region P+ are stored in the buffer memo! In the state transferred to either J12a or 12b, the deflection signal of the electron beam 4 and the electron beam 4 for performing the exposure operation in the area PL are determined based on the graphic data held in the memory of either of them. The arithmetic unit 11 calculates the shape control signal of the photoelectronic surface.

Here, the semiconductor elements Δ of the wafer 2 shown in FIG.

To explain the exposure corresponding to B, C, and D, the wafer 2 is transferred from the preliminary alignment section 16 to the sample stage l, and the buffer memo! Semiconductor elements A and B to J12a.

With the graphic data corresponding to C and D transferred,
The control computer 13 controls the sample stage control unit 1 based on the array data.
The movement of the sample stage 1 is controlled via the sample stage 5 so that the first element formation region PI on the sample stage 1 (lowermost left end in FIG. 2) is within the deflection region of the electron/electron beam 4. Furthermore, the control computer 13 controls the arithmetic unit 11 and selects an element formation area P1 in the buffer memory 12a based on the array data.
The shaping device 5 controls the shape of the photocathode of the electron beam 4, the objective lens 6 controls the focusing of the electron beam 4, and the deflector 7 controls the electron beam 4 based on the graphic data corresponding to the semiconductor device A that should be disciplined. Performs deflection control. As a result, a desired pattern is exposed to the electron beam sensitive resist coated on the surface of the wafer 2.

When the exposure to the first element forming area P1 is completed in this way, the control computer 13 controls the sample stage l based on the array data, and the second element forming area P2 (the first (right side of the element formation region P) is exposed to the electron beam 4.
position within the deflection area. Further, based on the graphic data for the region P2 stored in the buffer memory 12a, the calculation section 11 controls the shape control of the photoelectronic surface of the electron beam 4 by the shaper 5, and the shape control of the electron beam 4 on the wafer 2 surface by the objective lens 6. The electron beam 4 is focused and deflected by the deflector 7, and a desired pattern is exposed on the electron beam-sensitive resist coated on the surface of the wafer 2.

The above process is performed in the 400th element formation region P in the order of the semiconductor elements defined in the array data. By repeating this process up to the point in time, exposure of all the elements on the wafer 2 is completed.

Then, the buffer memo IJ 12 b is used as a transfer destination from the storage unit 14 when reading graphic data for a second wafer to be exposed next. The second wafer is prealigned on the prealignment section 16 while the first wafer is being exposed.

[Example 2] FIG. 3 is a block diagram showing another embodiment of the invention.

In FIG. 3, the same reference numerals are used for parts that are the same as those in FIG. 1 or have the same functions, so redundant explanation will be omitted below. The wafer to be exposed has the structure shown in FIG. 2.

This embodiment is an example of reduction exposure. The control computer 13 includes a control section 19 that controls the optical system, a storage 20 that stores a plurality of types of reticles, and a reticle transport section 21 that takes out a designated reticle from the storage 20 and stores it again after exposure is completed. It is connected. In addition, the control unit 19
A light source 22 for exposure and a reduction optical system 24 for forming an image on the wafer 2 through the reticle are connected to constitute an exposure means. The reduction optical system 24 includes a reduction lens and the like. Further, in this embodiment, the buffer memos 1J12a and 12b are not provided,
Data is read from the storage unit 14 and sent to the control computer 13.
The structure is such that it is secured internally.

To explain the general operation of the optical system, first, a light beam emitted from the light source 22 is blocked into a desired shape by passing through a reticle placed on the reticle holder 23. The image is then reduced by the reduction optical system 24 and formed into an image on the wafer 2.

Next, the operation of the second embodiment having the configuration shown in FIG. 3 will be explained.

First, the wafer 2 is placed on the preliminary alignment section 16, and the rotation and offset are adjusted. Thereafter, the wafer 2 is transferred from above the preliminary alignment section 16 to the sample stage 1. Here, the array data that defines the type and exposure position of the redicle to be exposed on the wafer 2 is described in 1. It is read from the α section 14 and stored in the control computer 13.

The control computer 13 moves the sample stage 1 in the x-y direction based on the read array data, positions one of the desired element formation areas of the wafer 2 under the irradiation area of the light beam, and also moves the element formation area P, The reticle to be exposed is taken out from the storage 20 by the reticle transport section 21, and the taken out reticle (this will be referred to as reticle A) is placed on the reticle holding section 23.

Next, the control computer 13 controls the reduction optical system 24 via the control unit 19 so that the wafer 2 is brought into focus. After that, the light source 22 is turned on to generate light, and the wafer 2
first element formation region P on the surface of (semiconductor element A)
Exposure is performed.

When the exposure to the first element formation region P is completed, the control computer 13 controls the exposure to the next semiconductor element based on the array data.
The element formation area P7 is positioned below the imaging area of the reduction optical system 24. Thereafter, the control unit 19 controls the reduction optical system 24 to focus on the element formation region P7 of the wafer 2, and turns on the light source 22 to perform exposure.

Thereafter, element formation region P, →PI3→P, →P23→P
Exposure for reticle A is completed by sequentially performing exposure in the above-described sequence in the order of 2 S - P 21 - P 3 s - P 3 s.

Next, the control computer 13 controls the reticle conveyance section 21 to return reticle 8 to a predetermined position in storage 20, and then moves reticle B corresponding to semiconductor element B from storage 20.
control to take out.

The taken-out reticle B is placed on the reticle holding part 23 by the reticle transport part 21, and the element formation area P2 is first exposed to light according to the procedure described above, and then the element formation area P6→P1o-+P4-P+ s
-P 22- P a s -P 3o-4P s
2- Exposure is carried out in the order of P 3 s - P 4°.

Further, after returning the semiconductor element B to the storage 20, the reticle C corresponding to the semiconductor element C is taken out, and after positioning by controlling the reduction optical system 24 as described above, the element forming area P3→P5→P, . ...→Exposure for P37. Positioning and exposure of the semiconductor element are performed in the same manner.

Above, the invention made by the present inventor has been specifically explained based on Examples, but it goes without saying that the present invention is not limited to the Examples and can be modified in various ways without departing from the gist thereof. stomach.

For example, although the loft number is used as the information attached to the wafer holding case and is recorded on a magnetic card, other information, such as a bar code, may also be used.

Furthermore, although an example of the reduction exposure is performed using an optical method, an electron beam reduction projection apparatus may also be used.

〔Effect of the invention〕

Among the inventions disclosed in this application, the effects obtained by typical ones are as follows.

That is, an exposure means that exposes an exposed layer formed on an exposed object by controlling an exposure mechanism that determines an exposure position, and specific information that is handled integrally with the exposed object. a reading means for reading; a data reading means for reading graphic data for exposure based on the content read by the reading means; Since the control means for moving relative to the exposure mechanism is provided, manual operation is not required, and it is possible to improve workability and reliability and to automate the exposure process.

[Brief explanation of drawings]

FIG. 1 is a block diagram showing one embodiment of an exposure apparatus according to the present invention, FIG. 2 is a plan view showing an example of a wafer to which the present invention is applied, and FIG. 3 is a block diagram showing another embodiment of the present invention. It is a diagram. 1... Sample stage, 2... Wafer 3... Electron beam source,
4...Electron beam, 5...Formator, 6...Objective lens, 7...Deflector, 8...Former control unit, 9...Lens system i11 part, 10... Deflection control, 11...Arithmetic unit, 12a, 12b-...Buffer memory, 13...
Control computer, 14... Storage section, 15... Sample stage control section, 16... Preliminary alignment section, 17... Human power section, 18
...Reading unit, 19...Control unit, 20...Storage, 2
DESCRIPTION OF SYMBOLS 1... Reticle conveyance part, 22... Light source, 23...
- Reticle holding part, 24... reduction optical system.

Claims (1)

[Scope of Claims] 1. An exposure means that exposes an exposed layer formed on an exposed object by controlling an exposure mechanism that determines an exposure position, etc., and integrally with the exposed object. a reading means for reading specific information to be handled; a data reading means for reading graphic data for exposure based on the content read by the reading means; controlling the exposure means based on the graphic data by the data reading means; An exposure apparatus comprising a control means for relative movement between an object to be exposed and the exposure mechanism. 2. The exposure apparatus according to claim 1, wherein the exposure means includes focusing and deflection means and irradiates the exposure position of the object to be exposed with the electron beam. 3. The apparatus according to claim 3, further comprising a conveying means for exchanging the reticle in accordance with differences in partial exposure content required by the object to be exposed, based on the graphic data from the data reading means. Exposure equipment. 4. The exposure apparatus according to claim 1, wherein the specific information is formed to be recordable. 5. The exposure apparatus according to claim 1, wherein the specific information is integrated with a holding case that houses the object to be exposed, or is recorded on a removably attached attachment.