JPH03177313A - Device for producing boron trichloride - Google Patents
Device for producing boron trichlorideInfo
- Publication number
- JPH03177313A JPH03177313A JP31677989A JP31677989A JPH03177313A JP H03177313 A JPH03177313 A JP H03177313A JP 31677989 A JP31677989 A JP 31677989A JP 31677989 A JP31677989 A JP 31677989A JP H03177313 A JPH03177313 A JP H03177313A
- Authority
- JP
- Japan
- Prior art keywords
- aluminum
- trichloride
- boron
- boron trifluoride
- aluminum trichloride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 title claims abstract description 27
- VSCWAEJMTAWNJL-UHFFFAOYSA-K aluminium trichloride Chemical compound Cl[Al](Cl)Cl VSCWAEJMTAWNJL-UHFFFAOYSA-K 0.000 claims abstract description 43
- WTEOIRVLGSZEPR-UHFFFAOYSA-N boron trifluoride Chemical compound FB(F)F WTEOIRVLGSZEPR-UHFFFAOYSA-N 0.000 claims abstract description 40
- 229910015900 BF3 Inorganic materials 0.000 claims abstract description 21
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 21
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 19
- 238000006243 chemical reaction Methods 0.000 claims abstract description 19
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 11
- 229910052801 chlorine Inorganic materials 0.000 claims description 11
- 239000000460 chlorine Substances 0.000 claims description 11
- 239000007787 solid Substances 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 238000004821 distillation Methods 0.000 claims description 5
- 150000001805 chlorine compounds Chemical class 0.000 claims description 3
- 239000007795 chemical reaction product Substances 0.000 claims 1
- IRPGOXJVTQTAAN-UHFFFAOYSA-N 2,2,3,3,3-pentafluoropropanal Chemical compound FC(F)(F)C(F)(F)C=O IRPGOXJVTQTAAN-UHFFFAOYSA-N 0.000 abstract description 13
- KLZUFWVZNOTSEM-UHFFFAOYSA-K Aluminum fluoride Inorganic materials F[Al](F)F KLZUFWVZNOTSEM-UHFFFAOYSA-K 0.000 abstract description 13
- 238000009835 boiling Methods 0.000 abstract description 8
- 229910052751 metal Inorganic materials 0.000 abstract description 4
- 239000002184 metal Substances 0.000 abstract description 4
- 239000012808 vapor phase Substances 0.000 abstract description 4
- 239000007790 solid phase Substances 0.000 abstract description 3
- 238000003860 storage Methods 0.000 abstract description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 abstract 2
- 239000007789 gas Substances 0.000 description 16
- 239000012071 phase Substances 0.000 description 13
- 238000000034 method Methods 0.000 description 7
- 238000000746 purification Methods 0.000 description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 238000000859 sublimation Methods 0.000 description 3
- 230000008022 sublimation Effects 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000003786 synthesis reaction Methods 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- -1 aluminum halide Chemical class 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 2
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 2
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- BHPQYMZQTOCNFJ-UHFFFAOYSA-N Calcium cation Chemical compound [Ca+2] BHPQYMZQTOCNFJ-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 229910001424 calcium ion Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 229910000856 hastalloy Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000003507 refrigerant Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 238000004065 wastewater treatment Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明はチッ化ホウ素の製造原料または半導体のエツチ
ング剤として利用される高純度な三塩化ホウ素を製造す
るための製造装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a production apparatus for producing highly pure boron trichloride, which is used as a raw material for boron nitride production or as an etching agent for semiconductors.
従来の三塩化ホウ素の製造方法としてはJ、4m。 The conventional method for producing boron trichloride is J, 4m.
Chem、 Soc、+ 62巻1257頁(194
0) 、itびに「イノ−ガニツク・シン上シス13巻
27〜30頁に記載の如く、固体のハロゲン化アルミ
ニウムを昇華温度で、三フッ化ホウ素と反応させる方法
がある。但しこの方法ではハロゲンは塩素と臭素である
。この方法は三ハロゲン化アルミニウムをその昇華温度
に加熱し、三塩化ホウ素と同一容器内で反応させ三ハロ
ゲン化ホウ素を得る方法である。Chem, Soc, + vol. 62, p. 1257 (194
There is a method in which solid aluminum halide is reacted with boron trifluoride at a sublimation temperature, as described in ``Inoganikku Synthesis, Vol. 13, pp. 27-30.However, in this method, halogen are chlorine and bromine.In this method, aluminum trihalide is heated to its sublimation temperature and reacted with boron trichloride in the same container to obtain boron trihalide.
この方法で↓よ0.5モルの三塩化アルミニウムを昇華
させて、反応当量より大過剰の2モルの三フフ化ホウ素
を用いる反応を同一容器内で行い、三塩化アルミニウム
当たりの収率は80%で三塩化ホウ素を得ているが、三
塩化ホウ素当たりの収率は極めて低く20%である。こ
の方法を用いると未反応の三フフ化ホウ素を回収又は除
外するための設備が必要となる。しかし三フッ化ホウ素
は極めて捕集の困難なガスであり、又捕集液中のホウフ
ッ化物イオンはカルシウムイオンと反応し難く、廃水処
理に特別な化学処理が必要である。In this method, ↓ 0.5 mol of aluminum trichloride is sublimed, and a reaction using 2 mol of boron trifluoride, which is in large excess over the reaction equivalent, is carried out in the same container, and the yield per aluminum trichloride is 80. % of boron trichloride, but the yield per boron trichloride is extremely low at 20%. Using this method requires equipment for recovering or removing unreacted boron trifluoride. However, boron trifluoride is an extremely difficult gas to collect, and boron fluoride ions in the collection liquid are difficult to react with calcium ions, requiring special chemical treatment for wastewater treatment.
以上のような諸問題があるために、この反応は三塩化ホ
ウ素の工業的製法として用いられることなく今日に至っ
ている。発四者らはこの反応を神々な面から詳細に検討
した結果、工業的製法に用いられない原因は次の点にあ
ることを究明するに至った。即ち、三塩化アルミニウム
が三フフ化ホウ素と同一容器内に固相として存在してい
るために、昇華表面で反応が進行し、生成するフッ化ア
ルミニウムが固体の表面を被覆するために反応の継続を
妨げる。Due to the problems mentioned above, this reaction has not been used as an industrial method for producing boron trichloride to this day. After examining this reaction in detail from a divine perspective, the inventors discovered that the reason why it is not used in industrial production methods is as follows. In other words, since aluminum trichloride exists as a solid phase in the same container as boron trifluoride, the reaction progresses on the sublimation surface, and the reaction continues because the aluminum fluoride produced coats the solid surface. prevent.
〔発明が解決しようとする課8]
本発明は気相で三塩化アルミニウムと三フッ化ホウ素と
を連続的に供給して反応を進行させ高収率で高純度の三
塩化ホウ素を合成しうる製造装置を開発することである
。[Problem 8 to be solved by the invention] The present invention enables the synthesis of high-yield, high-purity boron trichloride by continuously supplying aluminum trichloride and boron trifluoride in a gas phase to advance the reaction. The goal is to develop manufacturing equipment.
本発明者らは、固体又は溶融状態のアルミニウムに塩素
、塩化水素及び/又はアルミニウムと反応する塩素化合
物とを連続的に供給反応させて、発生機の気体三塩化ア
ルミニウムを合成するか、又は三塩化アルくニウムを加
熱昇華させて、気体三塩化アルミニウムを発生させ、こ
れを気相反応器に於いて三フフ化ホウ素と気相反応せし
め三塩化ホウ素を製造する装置を開発した。The present inventors synthesized the gaseous aluminum trichloride of the generator by continuously feeding solid or molten aluminum with chlorine, hydrogen chloride, and/or a chlorine compound that reacts with aluminum, or We have developed an apparatus for producing boron trichloride by heating and sublimating aluminum chloride to generate gaseous aluminum trichloride, which is reacted with boron trifluoride in a gas phase reactor.
本発明は気相の三塩化アルミニウムと三フッ化ホウ素を
連続的に気相反応させて三塩化ホウ素を合成する製造装
置に関する。即ち、固体アルミニウムを充填した容器を
加熱、通常好ましくは180〜600 ’Cに加熱し、
塩素、塩化水素及び/またはアルミニウムと反応する塩
素化合物を通じると容易に反応し三塩化アルミニウムが
反応率はぼ100%で連続的に気体で発生してくる。こ
の気相の三塩化アルミニウムを管状空塔からなる気相反
応器に導入し、他方から三フッ化ホウ素を導入すること
により反応が連続的に進行する。この気相と気相の反応
速度は極めて速く反応収率はほぼ100%である。The present invention relates to a manufacturing apparatus for synthesizing boron trichloride by continuously reacting aluminum trichloride and boron trifluoride in a gas phase. That is, a container filled with solid aluminum is heated, usually preferably to 180-600'C;
When passed through a chlorine compound that reacts with chlorine, hydrogen chloride, and/or aluminum, the reaction easily occurs, and aluminum trichloride is continuously generated as a gas at a reaction rate of approximately 100%. The reaction proceeds continuously by introducing this gas phase aluminum trichloride into a gas phase reactor consisting of a tubular empty column and introducing boron trifluoride from the other side. The reaction rate between the gas phases is extremely fast and the reaction yield is approximately 100%.
本発明においては、気相の三塩化アルミニウムを上記の
方法で製造しこれをそのまま使用する態様ばかりでなく
、固体の三塩化アルミニウムを昇華させて気相の三塩化
アルミニウムを発生させる装置においても同様である。In the present invention, not only the embodiment in which vapor phase aluminum trichloride is produced by the above method and used as it is, but also the embodiment in which solid aluminum trichloride is sublimated to generate vapor phase aluminum trichloride is similarly applicable. It is.
この気相の三塩化アルミニウムと三フッ化ホウ素との反
応において副生する固層のフッ化アルミニウムは管状空
塔下部にある気相、固相を分離する分離器に導入される
。The solid aluminum fluoride, which is a by-product of the reaction between the gaseous aluminum trichloride and boron trifluoride, is introduced into a separator located at the bottom of the tubular column that separates the gaseous and solid phases.
この分離器中で三塩化ホウ素、フッ化アルミニウムは2
5〜100 ’Cに冷却される。固体のフッ化アルミニ
ウムが分離器下部に堆禎し、連続排出装置、例えばロー
タリーパルプにより連続的に系外に排出され、高品位の
フッ化アルミニウムが回収される。分離器から出た気相
の三塩化ホウ素は連続的に凝縮器に導入され液化される
。この粗三塩化ホウ素を蒸留装置に導入し、低沸点精製
塔で微量のHCI、BF、及びCI、等の低沸点物を除
き、更に高沸点精製塔に導入し、FeC15,5iC1
4等の高沸点物を除去し精製する。また粗三塩化ホウ素
を分取せずに、ガスを直接蒸留装置に導入し精製するこ
とも可能である。In this separator, boron trichloride and aluminum fluoride are
Cooled to 5-100'C. Solid aluminum fluoride is deposited at the bottom of the separator and is continuously discharged from the system by a continuous discharge device, such as a rotary pulp, to recover high-grade aluminum fluoride. The gas phase boron trichloride exiting the separator is continuously introduced into the condenser and liquefied. This crude boron trichloride is introduced into a distillation apparatus, and a trace amount of low-boiling substances such as HCI, BF, and CI are removed in a low-boiling point purification column, and further introduced into a high-boiling point purification column, FeC15,5iC1
Purify by removing high boiling point substances such as No. 4. It is also possible to purify crude boron trichloride by directly introducing the gas into a distillation apparatus without separating it.
このように、本発明は気相の三塩化アルミニウムを連続
的に発生させ三フフ化ホウ素と気相反応させて蒸留精製
を行い高純度の三塩化ホウ素を得、並びに副生成物であ
るフッ化アルくニウムを回収する一連の三塩化ホウ素連
続的製造装置である。As described above, the present invention continuously generates aluminum trichloride in the gas phase, reacts it with boron trifluoride in the gas phase, performs distillation purification, obtains high-purity boron trichloride, and removes the by-product fluoride. This is a series of continuous boron trichloride production equipment that recovers aluminium.
本発明実施に際し、その代表的な装置を例示すれば、第
1図の通りである。即ち、加熱器(1)、発生器(2)
、塩素導入管(3)、アルミニウム補充口(4)及び三
塩化アルミニウム補充口(5)からなる三塩化アル旦ニ
ウム連続的発生装置、及び三塩化アルミニウムと三フッ
化ホウ素との気相反応器(6)、三フン化ホウ素導入管
(7)、フッ化アルミニウム分離器(8)、フッ化アル
くニウム排出ロータリーバルブ(9)、低沸点精製塔0
0)、高沸点精製塔(11)、貯槽02)からなる製造
装置で、この装置に使用される材質は発生器(2)にお
いては高温の塩素に対し耐食性を示すニッケル、ハステ
ロイ系の金属を用いるのが好ましい。A typical example of an apparatus for carrying out the present invention is shown in FIG. Namely, heater (1), generator (2)
, a continuous aluminum trichloride generator consisting of a chlorine inlet pipe (3), an aluminum replenishment port (4) and an aluminum trichloride replenishment port (5), and a gas phase reactor for aluminum trichloride and boron trifluoride. (6), boron trifluoride inlet pipe (7), aluminum fluoride separator (8), aluminum fluoride discharge rotary valve (9), low boiling point purification tower 0
0), a high boiling point purification tower (11), and a storage tank 02).The materials used in this equipment are nickel and hastelloy metals, which are resistant to high-temperature chlorine, in the generator (2). It is preferable to use
またアルミニウムの一部が反応熱により溶融しニッケル
等の金属と合金化することを防ぐため、アルミニウム塊
と金属材質との間に、アルミナ等のセラミック製のサポ
ート管を組み込むことができる。その他の部分はステン
レス鋼で構成される。Further, in order to prevent part of the aluminum from melting due to reaction heat and alloying with metal such as nickel, a support tube made of ceramic such as alumina can be incorporated between the aluminum lump and the metal material. Other parts are constructed of stainless steel.
尚この装置において三塩化アルミニウム排出管(5)に
アルミニウム固体を充填したカラム03)を設けること
ができる。これによりアルミニウムと塩素との反応で未
反応塩素が残存してもこの残存塩素はアルミニウムと反
応して三塩化アルミニウムとなり、完全に三塩化アルミ
ニウムに変換できる。In this apparatus, a column 03 filled with aluminum solid can be provided in the aluminum trichloride discharge pipe (5). As a result, even if unreacted chlorine remains due to the reaction between aluminum and chlorine, this remaining chlorine reacts with aluminum to become aluminum trichloride, and can be completely converted to aluminum trichloride.
また本発明に於いて固体の塩化アルミニウムを昇華させ
る場合には、第1図の装置に於いて、反応器(2)内で
三塩化アルミニウムを加熱蒸発させればよい。Further, in the case of sublimating solid aluminum chloride in the present invention, aluminum trichloride may be heated and evaporated in the reactor (2) in the apparatus shown in FIG.
〔実 施 例] 以下に実施例を挙げて本発明の詳細な説明する。〔Example] The present invention will be explained in detail by giving examples below.
実施例
塩化アル貴ニウム発生器(2)内逢300 mm、長さ
1000mmに金属アルミニウム塊(約50g塊)約7
0kgを充填し、200〜400°Cに加熱器(+)で
予熱する。ニッケル製気相反応器(6)は200〜40
0°Cに予熱された内径52.5mm、長さ400 m
mの管状空塔からなる。フッ化アルミニウム分離器は空
冷され、蒸留時のコンデンサーは冷媒で0〜4°Cに冷
却されている。(2)の発生器に塩素を(6)の気相反
応器に三塩化ホウ素を各々流計制御器を用いて定量供給
し、三塩化ホウ素を24時間連続合威した結果、第1表
に示される合成条件に対応する収率で、また第2表に示
される品位で三塩化ホウ素が得られ、第3表に示される
品位でフン化アルミニウムが回収された。Example Aluminum chloride noblenium generator (2) Approximately 7 pieces of metal aluminum (approximately 50 g pieces) with an internal diameter of 300 mm and a length of 1000 mm
Fill with 0 kg and preheat to 200-400°C with a heater (+). Nickel gas phase reactor (6) is 200-40
Preheated to 0°C, inner diameter 52.5 mm, length 400 m
It consists of m tubular empty towers. The aluminum fluoride separator is air-cooled, and the condenser during distillation is cooled to 0-4°C with a refrigerant. Chlorine was supplied to the generator in (2), and boron trichloride was supplied to the gas phase reactor in (6) using a flowmeter controller, and the boron trichloride was continuously combined for 24 hours, as shown in Table 1. Boron trichloride was obtained in yields corresponding to the synthesis conditions shown and in the grades shown in Table 2, and aluminum fluoride was recovered in the grades shown in Table 3.
第 表 生成した三塩化ホウ素の分析値 第 表 回収したフン化アルミニウムの分析埴No. table Analytical value of boron trichloride produced No. table Analysis of recovered aluminum fluoride
第1図は本発明装置の代表的な一例を示す図面である。
■・・・加熱器 8・・・フッ化アルミニ
ウ2・・・発生器 ム分離器3・・・
塩素導入管 9・・・ロータリーバルブ4・・
・アルくニウム補充口 10・・・精製塔5・・・三塩
化アルミニウム 11・・・精製塔流出管
12・・・貯槽
6・・・気相反応器 13・・・アルミニウム
充填7・・・三フッ化ホウ素 カラム導入管
(以 上)FIG. 1 is a drawing showing a typical example of the device of the present invention. ■... Heater 8... Aluminum fluoride 2... Generator Mu separator 3...
Chlorine introduction pipe 9...Rotary valve 4...
- Aluminum replenishment port 10... Purification tower 5... Aluminum trichloride 11... Purification tower outflow pipe
12... Storage tank 6... Gas phase reactor 13... Aluminum filling 7... Boron trifluoride column introduction tube (and above)
Claims (3)
アルミニウムと三フッ化ホウ素を気相反応させる反応容
器、および生成する三塩化ホウ素を凝縮する凝縮器とを
備えたことを特徴とする三塩化ホウ素の製造装置。(1) An aluminum trichloride generating reactor, a reaction vessel for reacting gaseous aluminum trichloride and boron trifluoride in a gas phase, and a condenser for condensing the produced boron trichloride. Boron chloride production equipment.
ルミニウムと三フッ化ホウ素を気相反応させる反応容器
、および反応生成物を蒸留する蒸留装置を備えたことを
特徴とする高純度三塩化ホウ素の製造装置。(2) High purity boron trichloride characterized by being equipped with an aluminum trichloride generating reactor, a reaction vessel for reacting gaseous aluminum trichloride and boron trifluoride in a gas phase, and a distillation device for distilling the reaction product. manufacturing equipment.
ムと、塩素およびアルミニウムと反応しうる塩素化合物
の少なくとも1種との反応により、三塩化アルミニウム
を発生する反応器であるか、または固体の塩化アルミニ
ウムを昇華させて三塩化アルミニウムを発生する反応器
である請求項(1)または(2)に記載の三塩化ホウ素
の製造装置。(3) The aluminum trichloride generation reactor is a reactor that generates aluminum trichloride by reacting aluminum with chlorine and at least one chlorine compound that can react with aluminum, or is a reactor that generates aluminum trichloride, or solid aluminum chloride. The apparatus for producing boron trichloride according to claim 1 or 2, which is a reactor that generates aluminum trichloride by sublimating aluminum.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP31677989A JPH03177313A (en) | 1989-12-06 | 1989-12-06 | Device for producing boron trichloride |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP31677989A JPH03177313A (en) | 1989-12-06 | 1989-12-06 | Device for producing boron trichloride |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH03177313A true JPH03177313A (en) | 1991-08-01 |
Family
ID=18080818
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP31677989A Pending JPH03177313A (en) | 1989-12-06 | 1989-12-06 | Device for producing boron trichloride |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH03177313A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010111550A (en) * | 2008-11-07 | 2010-05-20 | Ube Ind Ltd | High-purity boron trichloride and production method thereof |
JP2013144644A (en) * | 2013-04-30 | 2013-07-25 | Ube Industries Ltd | Method for producing high purity boron trichloride |
CN103950947A (en) * | 2014-05-20 | 2014-07-30 | 方治文 | Preparation method of high-purity boron trichloride-11 |
-
1989
- 1989-12-06 JP JP31677989A patent/JPH03177313A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010111550A (en) * | 2008-11-07 | 2010-05-20 | Ube Ind Ltd | High-purity boron trichloride and production method thereof |
JP2013144644A (en) * | 2013-04-30 | 2013-07-25 | Ube Industries Ltd | Method for producing high purity boron trichloride |
CN103950947A (en) * | 2014-05-20 | 2014-07-30 | 方治文 | Preparation method of high-purity boron trichloride-11 |
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