JPH03177001A - Conductive paste - Google Patents
Conductive pasteInfo
- Publication number
- JPH03177001A JPH03177001A JP1317043A JP31704389A JPH03177001A JP H03177001 A JPH03177001 A JP H03177001A JP 1317043 A JP1317043 A JP 1317043A JP 31704389 A JP31704389 A JP 31704389A JP H03177001 A JPH03177001 A JP H03177001A
- Authority
- JP
- Japan
- Prior art keywords
- powder
- low melting
- borosilicate
- conductive paste
- melting point
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000843 powder Substances 0.000 claims abstract description 32
- 238000002844 melting Methods 0.000 claims abstract description 19
- 230000008018 melting Effects 0.000 claims abstract description 19
- 229910052751 metal Inorganic materials 0.000 claims abstract description 16
- 239000002184 metal Substances 0.000 claims abstract description 16
- 229910052788 barium Inorganic materials 0.000 claims abstract description 6
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 5
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052793 cadmium Inorganic materials 0.000 claims abstract description 4
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052714 tellurium Inorganic materials 0.000 claims abstract description 4
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 4
- 239000011701 zinc Substances 0.000 claims abstract description 4
- 229910052746 lanthanum Inorganic materials 0.000 claims description 27
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims description 27
- 239000005388 borosilicate glass Substances 0.000 claims description 5
- 239000011521 glass Substances 0.000 abstract description 17
- 239000010406 cathode material Substances 0.000 abstract description 5
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 abstract description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052749 magnesium Inorganic materials 0.000 abstract description 2
- 239000011777 magnesium Substances 0.000 abstract description 2
- 229910052708 sodium Inorganic materials 0.000 abstract description 2
- 239000011734 sodium Substances 0.000 abstract description 2
- ZFZQOKHLXAVJIF-UHFFFAOYSA-N zinc;boric acid;dihydroxy(dioxido)silane Chemical compound [Zn+2].OB(O)O.O[Si](O)([O-])[O-] ZFZQOKHLXAVJIF-UHFFFAOYSA-N 0.000 abstract description 2
- UAOQDHWLCZKCQH-UHFFFAOYSA-N lanthanum(3+) hexaborate Chemical compound [La+3].[La+3].[La+3].[La+3].[La+3].[La+3].[O-]B([O-])[O-].[O-]B([O-])[O-].[O-]B([O-])[O-].[O-]B([O-])[O-].[O-]B([O-])[O-].[O-]B([O-])[O-] UAOQDHWLCZKCQH-UHFFFAOYSA-N 0.000 abstract 3
- 239000004615 ingredient Substances 0.000 abstract 1
- 238000010304 firing Methods 0.000 description 10
- 238000000034 method Methods 0.000 description 10
- 239000000758 substrate Substances 0.000 description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 8
- 239000000463 material Substances 0.000 description 6
- 238000007639 printing Methods 0.000 description 6
- 239000000203 mixture Substances 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 239000012299 nitrogen atmosphere Substances 0.000 description 4
- 238000005245 sintering Methods 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 2
- 238000009472 formulation Methods 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 239000005361 soda-lime glass Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 239000001856 Ethyl cellulose Substances 0.000 description 1
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- WUOACPNHFRMFPN-UHFFFAOYSA-N alpha-terpineol Chemical compound CC1=CCC(C(C)(C)O)CC1 WUOACPNHFRMFPN-UHFFFAOYSA-N 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 238000009125 cardiac resynchronization therapy Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- SQIFACVGCPWBQZ-UHFFFAOYSA-N delta-terpineol Natural products CC(C)(O)C1CCC(=C)CC1 SQIFACVGCPWBQZ-UHFFFAOYSA-N 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229920001249 ethyl cellulose Polymers 0.000 description 1
- 235000019325 ethyl cellulose Nutrition 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000007750 plasma spraying Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229940116411 terpineol Drugs 0.000 description 1
Landscapes
- Surface Treatment Of Glass (AREA)
- Non-Adjustable Resistors (AREA)
- Conductive Materials (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明はエレクトロニクス材料に関し、さらに詳しくは
、ガラス基板上あるいはガラス基板上に形成された誘電
体ガラス上にＤＣプラズマ放電デイスプレー用の陰極を
形成するための印刷焼成可能な導体組成物に関する。DETAILED DESCRIPTION OF THE INVENTION (Industrial Application Field) The present invention relates to electronic materials, and more particularly, to a method for forming a cathode for a DC plasma discharge display on a glass substrate or on a dielectric glass formed on a glass substrate. The present invention relates to a printable conductor composition for forming a printable conductor composition.
（従来の技術および背景）
昨今、プラズマデイスプレーを始めとするフラットデイ
スプレーパネルが、ＣＲＴに代わる表示機器として各方
面で使用されている。プラズマデイスプレーは、小型機
器類を中心に様々な分野に応用されている液晶デイスプ
レーに比べて、視野角度が広い、コントラスト比が高く
自家発光型で見易い、薄膜軽量である、応答スピードが
速い、カラー化が比較的容易である等の数々の利点を有
するので、ラップトツブコンピューター、ワークステー
ションなどの表示機器として、あるいは将来のハイビジ
ョン用の表示媒体としての利用も期待されている。(Prior Art and Background) In recent years, flat display panels such as plasma displays have been used in various fields as display devices in place of CRTs. Compared to liquid crystal displays, which are used in a variety of fields including small devices, plasma displays have a wider viewing angle, a higher contrast ratio, are self-luminous and easier to see, are thinner and lighter, and have faster response speeds. Since it has a number of advantages, such as being relatively easy to convert into color, it is expected to be used as a display device for laptop computers, workstations, etc., and as a display medium for future high-definition systems.
しかしながら、プラズマデイスプレーは液晶デイスプレ
ーに比べて駆動電圧が高く、消費電力が桁違いに大きい
ため、上記したような利点を有するにも関わらず、現実
の用途拡大はそれほど進んでいない。However, plasma displays have a higher driving voltage and consume an order of magnitude more power than liquid crystal displays, so despite having the above-mentioned advantages, the actual use of plasma displays has not expanded much.
ところで、現在のＤＣプラズマデイスプレーの陰極材料
としてはニッケル電極が使用されている。ニッケルはガ
ラス基板上にパターン状に印刷焼成が可能であることや
、比較的スパッタされにくい材料であり、導電性も比較
的高い材料である等の利点を有するからである。Incidentally, nickel electrodes are currently used as cathode materials in DC plasma displays. This is because nickel has advantages such as being able to be printed and fired in a pattern on a glass substrate, being a material that is relatively difficult to sputter, and having relatively high conductivity.
しかしながら、ニッケルは仕事関数が高く、熱電子放出
比はそれほど高くなく、その上、ＤＣプラズマデイスプ
レーは放電空間に陰極面が露出している構造のため、ス
パッタ防止のため少量の水銀を封入したガス中に設置し
なければならないなど、本来の陰極としての特性を十分
に発揮できないため、その結果として、駆動電圧が高く
なるという欠点を有している。従って、ＤＣプラズマデ
イスプレー用陰極として、二・ンケルよりもスパッタさ
れにくく、高い二次電子放出比を有し、且つ高導電率を
有する材料が待望されている。However, nickel has a high work function and a low thermionic emission ratio. Furthermore, since DC plasma displays have a structure in which the cathode surface is exposed in the discharge space, a small amount of mercury is sealed to prevent spatter. Since the cathode must be installed in a gas, it cannot fully exhibit its original characteristics as a cathode, and as a result, it has the disadvantage that the driving voltage becomes high. Therefore, as a cathode for DC plasma displays, there is a long-awaited material that is less susceptible to sputtering than Ni-Nkel, has a high secondary electron emission ratio, and has high electrical conductivity.
そこで、ニッケルに代わる多くの陰極材料が研究されて
いる中で、ホウ化ランタン、特に６ホウ化ランタンは上
記の特性に近い特性を有する材料として期待され、その
陰極形成手段としては、電子ビーム蒸着法、プラズマ溶
射法、スクリーン印刷法が公知である。これらの方法の
中で最も量産性の高い方式としてはスクリーン印刷法が
挙げられる。しかし、ホウ化ランタンの融点は２０００
℃以上であり、ガラス基板あるいは誘電体ガラスの軟化
点付近またはそれ以下の温度で焼き付ける必要のある印
刷焼成法では容易に焼結が進まず、得られたホウ化ラン
タン膜の抵抗値も面積抵抗値で数にΩ〜数１００にΩと
実用にはほど遠い値である。Therefore, while many cathode materials are being researched to replace nickel, lanthanum boride, especially lanthanum hexaboride, is expected to be a material with properties close to those described above, and the means for forming the cathode is electron beam evaporation. method, plasma spraying method, and screen printing method are well known. Among these methods, the screen printing method has the highest mass productivity. However, the melting point of lanthanum boride is 2000
℃ or above, and requires baking at a temperature near or below the softening point of the glass substrate or dielectric glass. Sintering does not proceed easily, and the resistance value of the resulting lanthanum boride film also has a sheet resistance value. The value ranges from several Ω to several 100 Ω, which is far from practical.
（発明が解決しようとする課題）
本発明は従来の技術の有するこのような問題点に鑑みて
なされたものであり、その目的は、印刷焼成が可能で高
導電率を有する６ホウ化ランタンを主成分とするプラズ
マデイスプレー用の陰極形成材料を提供することにある
。(Problems to be Solved by the Invention) The present invention has been made in view of the above-mentioned problems of the conventional technology, and its purpose is to produce lanthanum hexaboride that can be printed and fired and has high electrical conductivity. An object of the present invention is to provide a cathode-forming material for plasma displays, which is a main component.
（課題を解決するための手段）
上記目的を達成するために本発明の要旨は、融点が３５
０〜８００℃である低融点金属の粉末を２〜２０重景％
有することを特徴とする６ホウ化ランタンの粉末を主成
分とする導電性ペーストを第一の発明とし、
融点が３５０〜８００℃である低融点金属の粉末を２〜
２０重量％と軟化点が３５０〜７００″Ｃであるホウケ
イ酸塩系ガラス粉末を２〜ｌＯ重量％有し、有機ビヒク
ルと混合してなる６ホウ化ランタンの粉末を主成分とす
る導電性ペーストを第二の発明とし、
上記第一または第二の発明において、低融点金属がアル
ミニウム、バリウム、カドミウム、亜鉛、テルルの内の
１種もしくは２種以上からなることを特徴とする導電性
ペーストを第三の発明とする。(Means for Solving the Problem) In order to achieve the above object, the gist of the present invention is that the melting point is 35
2 to 20% of low melting point metal powder with a temperature of 0 to 800℃
The first invention is a conductive paste mainly composed of powder of lanthanum hexaboride, which is characterized by having a powder of a low melting point metal having a melting point of 350 to 800°C.
20% by weight of borosilicate glass powder with a softening point of 350 to 700"C, and 2 to 10% by weight of borosilicate glass powder, mixed with an organic vehicle. A conductive paste mainly composed of lanthanum hexaboride powder. is a second invention, and in the first or second invention, the conductive paste is characterized in that the low melting point metal is made of one or more of aluminum, barium, cadmium, zinc, and tellurium. This is the third invention.
本発明のホウ化ランタン粉末は市販のものを用いること
ができるが、高導電率を得るためには、ランタン１原子
に対して４〜７程度のホウ素原子が結合したホウ化ラン
タンが望ましく、６ホウ化ランタンが最も好ましい。ま
た、ホウ化ランタンの平均粒径は、後記する理由により
２〜１５μｍの範囲が好ましい。Commercially available lanthanum boride powders can be used as the lanthanum boride powder of the present invention, but in order to obtain high conductivity, lanthanum boride in which about 4 to 7 boron atoms are bonded to one lanthanum atom is preferable. Lanthanum boride is most preferred. Further, the average particle size of lanthanum boride is preferably in the range of 2 to 15 μm for reasons described later.
また、本発明は、３５０〜８００℃の低融点を有する金
属の粉末を用いることを大きな特徴とし、この低融点金
属としては、アルミニウム、バリウム、カドミウム、亜
鉛、テルル、マグネシウムなどの粉末が好適に利用でき
、ホウ化ランタンの有する優れた熱電子放出材料として
の特性を損なわしめないためには、アルミニウム、バリ
ウムが特に好ましい。また、低融点金属の粉末の平均粒
径は、後記する理由により２〜１５μｍの範囲が好まし
い。Further, a major feature of the present invention is the use of powder of a metal having a low melting point of 350 to 800°C, and powders of aluminum, barium, cadmium, zinc, tellurium, magnesium, etc. are preferably used as the low melting point metal. Aluminum and barium are particularly preferred in order to avoid impairing the excellent properties of lanthanum boride as a thermionic emission material. Further, the average particle diameter of the low melting point metal powder is preferably in the range of 2 to 15 μm for the reasons described below.
さらに、本発明のホウケイ酸塩系ガラス粉末としては、
ホウケイ酸鉛、ホウケイ酸亜鉛、ホウケイ酸バリウム、
ホウケイ酸ナトリウム等のガラス粉末を用いることがで
きる。また、ホウケイ酸塩系ガラス粉末の粒径としては
、通常の厚膜ペーストと同じく３〜ＩＯμｍの範囲のも
のが好適に利用できる。Furthermore, the borosilicate glass powder of the present invention includes:
Lead borosilicate, zinc borosilicate, barium borosilicate,
Glass powders such as sodium borosilicate can be used. Further, as for the particle size of the borosilicate glass powder, those in the range of 3 to IO μm can be suitably used, as is the case with ordinary thick film pastes.
そして、本発明の有機ビヒクルとしては、通常の厚膜印
刷用ペーストに用いられるような、例えばターピネオー
ルに５重量％程度のエチルセルロースを溶解せしめたも
のが使用できる。As the organic vehicle of the present invention, there can be used one prepared by dissolving about 5% by weight of ethyl cellulose in terpineol, which is used in ordinary thick film printing pastes.
有機ビヒクルを使用してペーストを得る方法としては、
固形分として５０〜９０重量％になるように無機物粉末
と有機ビヒクルを混合し、通常のペースト作製と全く同
様に、例えば、３本ロールなどで混合分散することでペ
ースト状物質を得ることができる。Methods for obtaining pastes using organic vehicles include:
A paste-like substance can be obtained by mixing an inorganic powder and an organic vehicle so that the solid content is 50 to 90% by weight, and mixing and dispersing the mixture using, for example, a three-roll roll, in exactly the same way as in normal paste production. .
ガラス基板上あるいはガラス基板上に形成された誘電体
ガラス上に本発明に係る導電性ペーストを印刷焼成する
方法としては、通常のスクリーン印刷にて２５０〜４０
０メツシユのパターン状のスクリーンを用いて好適に印
刷でき、これを乾燥後、大気中あるいは窒素雰囲気中で
５８０〜７００″Ｃにて焼付けることができる。As a method for printing and baking the conductive paste according to the present invention on a glass substrate or a dielectric glass formed on a glass substrate, a method of printing and baking a conductive paste of 250 to 40
It can be suitably printed using a 0 mesh patterned screen, and after drying, it can be baked at 580 to 700''C in air or nitrogen atmosphere.
なお、窒素中で焼付けた方が低抵抗のものを得ることか
できるのでより好ましい。Incidentally, it is more preferable to bake in nitrogen because a product with lower resistance can be obtained.
（作用）
低融点金属の粉末はガラスの軟化点付近あるいはそれ以
下の温度で軟化し、ホウ化ランタンの濡れ性を改善する
もので、この低融点金属の粉末が２〜２０重量％配合さ
れていることにより、ホウ化ランタンの焼結化と接着性
の改善を図ることができる。その結果、導電性の極めて
高い焼結体を得ることができる。(Function) The low melting point metal powder softens at temperatures near or below the softening point of glass and improves the wettability of lanthanum boride. By including the lanthanum boride, it is possible to improve the sintering and adhesive properties of lanthanum boride. As a result, a sintered body with extremely high conductivity can be obtained.
また、ホウケイ酸塩系ガラス粉末、が２〜１０重量％配
合されていることにより、６ホウ化ランタンとガラス基
板との接着性がより高められ、６ホウ化ランタンの焼結
化の進行を早めることができる。しかし、その軟化点が
３５０〜７００℃の範囲外であれば、ガラスの浮き出し
あるいは接着力不足などの好ましくない現象を生じる。In addition, by blending 2 to 10% by weight of borosilicate-based glass powder, the adhesion between lanthanum hexaboride and the glass substrate is further enhanced, which accelerates the progress of sintering of lanthanum hexaboride. be able to. However, if the softening point is outside the range of 350 to 700°C, undesirable phenomena such as embossment of the glass or insufficient adhesive strength will occur.
そして、６ホウ化ランタンおよび低融点金属粉末の平均
粒径が２μｍ未満であると焼成時の酸化が著しく導電性
がかなり低下する。また、それらの平均粒径が１５μｍ
超であると繊細なパターン印刷が不可能となり、実用的
でない。If the average particle size of the lanthanum hexaboride and low melting point metal powder is less than 2 μm, oxidation during firing will be significant and the conductivity will be considerably reduced. In addition, their average particle size is 15 μm
If it is too thick, delicate pattern printing becomes impossible and is not practical.
（実施例）
以上、本発明によれば、プラズマ放電デイスプレーの陰
極材料として駆動電圧を下げ、消費電力を低減させるた
めの有力な材料であるホウ化ランタン陰極を、量産性に
優れた印刷焼成法にて形成しうるホウ化ランタン含有導
電性ペーストを提供することが可能で、以下に実施例を
挙げて本発明の詳細な説明するが、本発明はこれら実施
例によりなんら限定されるものではない。(Example) As described above, according to the present invention, a lanthanum boride cathode, which is an effective material for lowering driving voltage and power consumption as a cathode material for plasma discharge displays, is produced by printing and baking, which is excellent in mass production. It is possible to provide a lanthanum boride-containing conductive paste that can be formed by the method, and the present invention will be described in detail below with reference to Examples, but the present invention is not limited in any way by these Examples. do not have.
１）実施例１〜１４
表１に示す配合（重量％）のペーストを作製し、ソーダ
ライムガラス基体上にパターン付き２５０メツシユスク
リーンを通して、蛇行状のパターン（端子間距離１００
ｍｍ、線幅５００μｍ、アスペクト比２００）を印刷し
、１２０″Ｃで５分間乾燥後ベルト炉に設置して、表１
に示す空気または窒素雰囲気、各ピーク焼成温度（ピー
ク保持時間１０分間）、昇温−降温のサイクル時間６０
分間で焼成を行った。そして、武田理研製のディジタル
マルチメーターにて抵抗値を測定した。その測定結果を
表１に示す。1) Examples 1 to 14 A paste having the formulation (wt%) shown in Table 1 was prepared and passed through a patterned 250 mesh screen onto a soda lime glass substrate to form a serpentine pattern (terminal distance 100%).
mm, line width 500 μm, aspect ratio 200), dried at 120″C for 5 minutes, and placed in a belt furnace.
Air or nitrogen atmosphere, each peak firing temperature (peak holding time 10 minutes), temperature rise-temperature fall cycle time 60 minutes as shown in
Firing took place within minutes. Then, the resistance value was measured using a digital multimeter manufactured by Takeda Riken. The measurement results are shown in Table 1.
また、表１には、空気雰囲気で、ピーク焼成温度５４０
℃（ピーク保持時間１０分間）、昇温−降温のサイクル
時間６０分間で再焼成した結果も併記した。Table 1 also shows that the peak firing temperature is 540 in an air atmosphere.
℃ (peak holding time 10 minutes), and the results of re-firing at a temperature raising/lowering cycle time of 60 minutes are also shown.
２）比較例１〜８
表２に示す配合（重量％）のペーストを作製し、このペ
ーストを実施例１〜１４と同様の条件でソーダライムガ
ラス基体上に印刷し、１２０℃で５分間乾燥後ベルト炉
に設置して、表２に示す空気または窒素雰囲気、各ピー
ク焼成温度（ピーク保持時間１０分間）、昇温−降温の
サイクル時間６０分間で焼成を行った。そして、武田理
研製のディジタルマルチメーターにて抵抗値を測定した
。その測定結果を表２に示す。2) Comparative Examples 1 to 8 A paste with the formulation (wt%) shown in Table 2 was prepared, and this paste was printed on a soda lime glass substrate under the same conditions as Examples 1 to 14, and dried at 120°C for 5 minutes. It was installed in a rear belt furnace and fired under the air or nitrogen atmosphere shown in Table 2, at each peak firing temperature (peak holding time 10 minutes), and at a temperature rising-temperature cooling cycle time of 60 minutes. Then, the resistance value was measured using a digital multimeter manufactured by Takeda Riken. The measurement results are shown in Table 2.
また、表２には実施例１〜Ｉ４と同様の条件で再焼成し
た結果も併記した。Table 2 also shows the results of re-firing under the same conditions as Examples 1 to I4.
なお、表３には実施例１〜１４および比較例１〜８の印
刷焼成実験で使用した原料の詳細を示した。Note that Table 3 shows details of the raw materials used in the printing and firing experiments of Examples 1 to 14 and Comparative Examples 1 to 8.
表１および表２より、以下の点が明らかである。From Tables 1 and 2, the following points are clear.
■実施例１〜１４に係るものは、空気中で焼成した場合
でも、抵抗値が１にΩ以下（面積抵抗値５Ω以下）であ
り、窒素中で焼成した場合の抵抗値は１００Ω以下（面
積抵抗（ｆｉｏ、５Ω以下）であり、良好な導電性を示
している。■Those according to Examples 1 to 14 have a resistance value of 1 ohm or less (area resistance value of 5 ohms or less) even when fired in air, and a resistance value of 100 ohms or less (area resistance value of 5 ohms or less) when fired in nitrogen. It has a resistance (fio, 5Ω or less) and shows good conductivity.
また、再焼成しても、殆ど抵抗値は上昇していない。Moreover, even after re-firing, the resistance value hardly increases.
■比較例１〜８に係るものは、低融点金属が配合されて
いないか又はその配合量が本発明の範囲以上で多過ぎる
ので、６ホウ化ランタンの焼結が不十分で、窒素雰囲気
で焼成したものでも３にΩ以上（面積抵抗値１５Ω以上
）の高い抵抗値を有し、特に再焼成後の抵抗値の上昇が
著しく、極めて導電性の悪い材料である。■In Comparative Examples 1 to 8, the low melting point metal was not blended or the blended amount was too large beyond the range of the present invention, so sintering of the lanthanum hexaboride was insufficient, and it was not possible to sinter the lanthanum hexaboride in a nitrogen atmosphere. Even when fired, it has a high resistance value of 3Ω or more (area resistance value of 15Ω or more), and the resistance value increases particularly after re-firing, making it an extremely poor conductive material.
（発明の効果）
本発明によれば、６ホウ化ランタンが本来有している対
スパッタ性および高い熱電子放出能を損なうことなく、
印刷焼成が可能で高導電率を有するＤＣプラズマデイス
プレー用の陰極材料として極めて有用な導電性ペースト
を提供することができる。(Effects of the Invention) According to the present invention, lanthanum hexaboride can be used without impairing its inherent sputter resistance and high thermionic emission ability.
It is possible to provide a conductive paste that can be printed and fired and has high conductivity and is extremely useful as a cathode material for DC plasma displays.
Claims (1)
２〜２０重量％有することを特徴とする６ホウ化ランタ
ンの粉末を主成分とする導電性ペースト ２）融点が３５０〜８００℃である低融点金属の粉末を
２〜２０重量％と軟化点が３５０〜７００℃であるホウ
ケイ酸塩系ガラス粉末を２〜１０重量％有し、有機ビヒ
クルと混合してなる６ホウ化ランタンの粉末を主成分と
する導電性ペースト ３）低融点金属がアルミニウム、バリウム、カドミウム
、亜鉛、テルルの内の１種もしくは２種以上からなるこ
とを特徴とする請求項１または２記載の導電性ペースト[Scope of Claims] 1) A conductive paste mainly composed of lanthanum hexaboride powder, which is characterized by containing 2 to 20% by weight of a powder of a low melting point metal having a melting point of 350 to 800°C.2) Melting point 2 to 20% by weight of a low melting point metal powder having a temperature of 350 to 800°C and 2 to 10% by weight of a borosilicate glass powder having a softening point of 350 to 700°C, mixed with an organic vehicle. 3) A conductive paste containing powder of lanthanum hexaboride as a main component 3) Claim 1 or 2, characterized in that the low melting point metal consists of one or more of aluminum, barium, cadmium, zinc, and tellurium. Conductive paste described
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1317043A JPH03177001A (en) | 1989-12-05 | 1989-12-05 | Conductive paste |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1317043A JPH03177001A (en) | 1989-12-05 | 1989-12-05 | Conductive paste |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03177001A true JPH03177001A (en) | 1991-08-01 |
Family
ID=18083781
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1317043A Pending JPH03177001A (en) | 1989-12-05 | 1989-12-05 | Conductive paste |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03177001A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5352982A (en) * | 1990-10-16 | 1994-10-04 | Honda Giken Kogyo Kabushiki Kaisha | Method and apparatus for displaying a residual electric charge of a battery for an electrically driven vehicle |
| JP2020123718A (en) * | 2019-01-29 | 2020-08-13 | 三ツ星ベルト株式会社 | Resistor paste, resistor, and manufacturing method of the same |
-
1989
- 1989-12-05 JP JP1317043A patent/JPH03177001A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5352982A (en) * | 1990-10-16 | 1994-10-04 | Honda Giken Kogyo Kabushiki Kaisha | Method and apparatus for displaying a residual electric charge of a battery for an electrically driven vehicle |
| JP2020123718A (en) * | 2019-01-29 | 2020-08-13 | 三ツ星ベルト株式会社 | Resistor paste, resistor, and manufacturing method of the same |
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