JPH0317622B2 - - Google Patents

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Publication number
JPH0317622B2
JPH0317622B2 JP61205759A JP20575986A JPH0317622B2 JP H0317622 B2 JPH0317622 B2 JP H0317622B2 JP 61205759 A JP61205759 A JP 61205759A JP 20575986 A JP20575986 A JP 20575986A JP H0317622 B2 JPH0317622 B2 JP H0317622B2
Authority
JP
Japan
Prior art keywords
plate
polishing
polished
parallelism
spherical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP61205759A
Other languages
Japanese (ja)
Other versions
JPS6362668A (en
Inventor
Koichi Tanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Priority to JP61205759A priority Critical patent/JPS6362668A/en
Publication of JPS6362668A publication Critical patent/JPS6362668A/en
Publication of JPH0317622B2 publication Critical patent/JPH0317622B2/ja
Granted legal-status Critical Current

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  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Description

【発明の詳細な説明】 (産業上の利用分野) 本発明は、例えば半導体ウエーハを鏡面研摩す
るための研摩装置に係り、特にこれの定盤とプレ
ートの平行度を高く保つ平行度維持機構を設けた
研摩装置及び該平行度維持機構の作動抵抗の低減
を図つた研摩装置に関する。
DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a polishing apparatus for mirror polishing a semiconductor wafer, for example, and in particular to a parallelism maintaining mechanism for keeping the surface plate and plate highly parallel. The present invention relates to a polishing device provided therein and a polishing device that aims to reduce the operating resistance of the parallelism maintaining mechanism.

(従来の技術) 第8図に研摩装置による研摩の原理図を示す
が、例えば半導体ウエーハWはプレート104の
下面にマウンテイング材、ワツクス121等を介
して接着され、その下面を所定の速度で水平旋回
する定盤101上に貼設された研摩布(クロス)
102上に所定の力Pで押圧され、ノズル122
からの研摩剤123の供給を受けて上記研摩布1
02との間に相対滑りを生じて当該半導体ウエー
ハWの下面が鏡面研摩される。
(Prior Art) FIG. 8 shows a diagram of the principle of polishing using a polishing device. For example, a semiconductor wafer W is bonded to the lower surface of a plate 104 via a mounting material, wax 121, etc., and the lower surface is moved at a predetermined speed. Abrasive cloth (cloth) affixed on the horizontally rotating surface plate 101
102 with a predetermined force P, the nozzle 122
The abrasive cloth 1 is supplied with abrasive 123 from
02, and the lower surface of the semiconductor wafer W is mirror-polished.

ところで、近年の半導体デバイスの高集積化等
に伴い、半導体ウエーハの被研摩物には高平行度
及び高平担度が要求されるが、この要求を満たす
ためには研摩中において前記定盤101とプレー
ト104との平行が保たれなければならない。
Incidentally, with the recent increase in the degree of integration of semiconductor devices, high parallelism and high flatness are required for semiconductor wafers to be polished. Parallelism with plate 104 must be maintained.

第9図乃至第12図に定盤とプレートとの平行
を保つ各種機構の説明図を示す。即ち、第9図に
示すものは機械的固定方式であつて、これはプレ
ート204に一体に取付けられた軸203を軸受
203にて回転自在に支承し、プレート204の
振れを防ぐようにしたものである。又、第10図
に示すものは、プレート追随方式であつて、これ
は303とプレート304との間に軸受330を
介在させてプレート304を定盤301の傾斜に
沿つて追随させるようにしたものである。更に、
第11図に示すものはピボツト軸受方式であつ
て、これはビボツト軸430を介してプレート4
04を軸403に対して傾動自在に支持し、該プ
レート404の作動中心0の位置を下げたもので
ある。(例えば、特開昭55−86120号、同57−
20436号、同60−80558号公報参照)。更に又、第
12図に示すものは外周保持方式であつて、これ
は図示の如くプレート504の外周を回転自在な
ローラ540,540に保持するものである。
尚、第12図aは研摩装置の平面図、同図bは同
研摩装置の側面図であり、図中501は図示矢印
方向に回転する定盤である。
FIGS. 9 to 12 are explanatory diagrams of various mechanisms for maintaining parallelism between the surface plate and the plate. That is, the one shown in FIG. 9 is a mechanical fixing method in which a shaft 203 integrally attached to a plate 204 is rotatably supported by a bearing 203 to prevent the plate 204 from wobbling. It is. Furthermore, the one shown in FIG. 10 is a plate following system, in which a bearing 330 is interposed between 303 and plate 304 to cause plate 304 to follow along the inclination of surface plate 301. It is. Furthermore,
The one shown in FIG. 11 is a pivot bearing system, in which the plate 4 is
04 is supported tiltably about a shaft 403, and the position of the operating center 0 of the plate 404 is lowered. (For example, JP-A-55-86120, JP-A No. 57-86120,
20436 and 60-80558). Furthermore, what is shown in FIG. 12 is an outer periphery holding method, in which the outer periphery of the plate 504 is held by rotatable rollers 540, 540 as shown.
Note that FIG. 12a is a plan view of the polishing device, and FIG. 12b is a side view of the polishing device, and 501 in the figure is a surface plate that rotates in the direction of the arrow in the figure.

(発明が解決しようとする問題点) しかしながら、上記従来の各種方式による平行
度維持機構には各々次のような問題点がある。即
ち第9図に示す機械的固定方式によるものにあつ
ては、高精度の研摩機が必要である上、軸203
の傾斜、定盤201の面振れ等が発生した場合に
は平行が維持できず、第10図に示すプレート追
随方式にあつては、軸受330の作用中心が研摩
面上にあるため、研摩面に作用する摩擦力によつ
て定盤301とプレート304との平行が維持さ
れず、従つて、被研摩物を保持するマウンテイン
グ材(図示せず)及び定盤301上に貼設される
研摩布(図示せず)に加わる圧縮力の分布が不均
一となつてこれらマウンテイング材及び研摩布が
不均一な変形をするため、高平行度、高平坦度の
半導体ウエーハを得ることができないという問題
がある。又、第11図に示すピボツト軸受方式に
あつては、プレート404の中心部が変形してこ
れらの平担度が維持できないばかりか、該プレー
ト404に高荷重を加えることができなという問
題があり、第12図に示す外周保持方式にあつて
は、プレート504の径が小さい場合には適用が
困難であり、油圧シリンダ等でプレート504を
強制加圧した状態で研摩することができないとい
う問題がある。
(Problems to be Solved by the Invention) However, each of the conventional parallelism maintaining mechanisms described above has the following problems. That is, in the case of the mechanical fixing method shown in FIG. 9, a high-precision polishing machine is required, and the shaft 203
If the tilt of the surface plate 201 or surface runout of the surface plate 201 occurs, parallelism cannot be maintained, and in the plate following method shown in FIG. The surface plate 301 and the plate 304 are not kept parallel due to the frictional force acting on the surface plate 301. It is said that semiconductor wafers with high parallelism and flatness cannot be obtained because the distribution of the compressive force applied to the cloth (not shown) becomes uneven, causing uneven deformation of the mounting material and the polishing cloth. There's a problem. Further, in the case of the pivot bearing system shown in FIG. 11, there is a problem that not only the central part of the plate 404 is deformed and the flatness cannot be maintained, but also a high load cannot be applied to the plate 404. However, the outer periphery holding method shown in FIG. 12 is difficult to apply when the diameter of the plate 504 is small, and there is a problem that polishing cannot be performed while the plate 504 is forcibly pressurized with a hydraulic cylinder or the like. There is.

本発明は上記従来の問題に鑑みてなされたもの
で、その目的とする処は、研摩面に摩擦力が作用
してもプレートと定盤の平行を厳密に保ち、高平
行度及び高平担度の研摩加工を実施することがで
きる研摩装置を提供するにある。
The present invention has been made in view of the above-mentioned conventional problems, and its purpose is to maintain strict parallelism between the plate and the surface plate even when frictional force acts on the polished surface, and to achieve high parallelism and high flatness. An object of the present invention is to provide a polishing device capable of performing polishing processing.

(問題点を解決するための手段) 上記目的を達成すべく、本発明は、傾動自在な
プレートに保持された被研摩物を所定の力で押圧
することによつて該被研摩物表面を鏡面研摩する
ようにした研摩装置において、前記プレートを前
記定盤の上方に垂設にされる軸に平行度維持機構
を介して支持せしめ、該平行度維持機構を、その
傾動中心が前記被研摩物と研摩布との接触面上に
位置する球面軸受を含んで構成したことをその特
徴とする。
(Means for Solving the Problems) In order to achieve the above object, the present invention provides a mirror-like surface of the object to be polished by pressing the object to be polished held by a tiltable plate with a predetermined force. In a polishing device configured to perform polishing, the plate is supported via a parallelism maintaining mechanism on a shaft vertically disposed above the surface plate, and the parallelism maintaining mechanism is arranged such that its center of tilt is aligned with the object to be polished. Its feature is that it includes a spherical bearing located on the contact surface between the polishing cloth and the polishing cloth.

(作用) 本発明によれば、プレートは平行度維持機構を
構成する球面軸受を介して軸に支持され、球面軸
受の傾動中心は被研摩物と研摩布との接触面(研
摩面)上に位置するため、被研摩物の厚さ(被研
摩物が半導体ウエーハである場合には、その厚さ
はプレートの厚さに比して無視し得る程薄い。)
を無視すれば、プレートの作動中心(傾動中心)
も研摩面上に位置することとなる。
(Function) According to the present invention, the plate is supported by the shaft via the spherical bearing that constitutes the parallelism maintaining mechanism, and the center of tilt of the spherical bearing is on the contact surface (polishing surface) between the object to be polished and the polishing cloth. Because of the position, the thickness of the object to be polished (if the object to be polished is a semiconductor wafer, its thickness is negligible compared to the thickness of the plate).
If ignored, the operating center of the plate (tilting center)
will also be located on the polished surface.

而して、上述のようにプレートの作動中心が研
摩面上に位置すると、研摩面上に作用する摩擦力
Fの作用点とプレートの作動中心間の距離Lが零
(L=O)となり、摩擦力Fと距離Lとの積で表
わされるところのプレートを傾けようとするモー
メントMが零となり(M=F×L=O)、研摩面
に摩擦力が作用するにも拘らず、プレートと定盤
との平行を厳密に維持することができ、これによ
つて高平行度及び高平担度の研摩加工が可能とな
る。
Therefore, when the operating center of the plate is located on the polishing surface as described above, the distance L between the point of application of the frictional force F acting on the polishing surface and the operating center of the plate becomes zero (L=O), The moment M that tries to tilt the plate, which is expressed as the product of the frictional force F and the distance L, becomes zero (M=F×L=O), and even though the frictional force acts on the polished surface, the plate Parallelism with the surface plate can be strictly maintained, thereby enabling polishing with high parallelism and high flatness.

尚、球面軸受の傾動中心を被研摩物と研摩布と
の接触面(研摩面)上に位置せしめる具体的な手
段としては、該球面軸受を、その曲率中心が研摩
面上に位置する凹凸球面かる成る凹凸面座を含ん
で構成することが考えられる。
In addition, as a specific means for positioning the tilting center of the spherical bearing on the contact surface (polishing surface) between the object to be polished and the polishing cloth, it is possible to place the spherical bearing on a concave-convex spherical surface whose center of curvature is located on the polishing surface. It is conceivable to include a concavo-convex surface seat consisting of the following.

(実施例) 以下に本発明の実施例を添付図面に基づいて説
明する。
(Example) Examples of the present invention will be described below based on the accompanying drawings.

第1図は本発明に係る研摩装置の縦断面図であ
り、同図において1は円板上の定盤であつて、こ
れは不図示の駆動装置によつてその中心軸周りに
水平に回転駆動され、その上面には適度の弾性を
有する研摩布(クロス)2が貼設されている。
又、この定盤1の外周部の上方には軸3が垂設さ
れており、該軸3の下端部には平行度維持機構1
0を介して円板状のプレート4が軸3に対して傾
動自在に取付けられている。尚、このプレート4
はステンレス鋼(SUS)、セラミツク等の剛性の
高い材料にて構成され、これには多数の小孔4a
…が穿設されている。又、前記軸3は中空状であ
つて、これの中心部に貫設された孔3aは図示の
如く真空ポンプ5に連通されており、該孔3aの
端部は前記平行度維持機構10とプレート4とで
囲まれて形成される空間S内に開口している。そ
して、プレート4の下面には被研摩物である薄板
状の半導体ウエーハWが後述の手段によつて吸着
されており、該半導体ウエーハWは所定の力Pに
て研摩布2上に押圧されている。
FIG. 1 is a longitudinal sectional view of the polishing apparatus according to the present invention, and in the figure, 1 is a surface plate on a disk, which is rotated horizontally around its central axis by a drive device (not shown). It is driven, and an abrasive cloth 2 having appropriate elasticity is attached to its upper surface.
Further, a shaft 3 is vertically installed above the outer circumference of the surface plate 1, and a parallelism maintaining mechanism 1 is provided at the lower end of the shaft 3.
A disk-shaped plate 4 is attached to the shaft 3 via the shaft 3 so as to be tiltable. Furthermore, this plate 4
is made of highly rigid materials such as stainless steel (SUS) and ceramics, and has many small holes 4a.
... has been drilled. Further, the shaft 3 is hollow, and a hole 3a formed through the center thereof is communicated with a vacuum pump 5 as shown in the figure, and an end of the hole 3a is connected to the parallelism maintaining mechanism 10. It opens into a space S surrounded by the plate 4. A thin plate-shaped semiconductor wafer W, which is an object to be polished, is adsorbed to the lower surface of the plate 4 by means described later, and the semiconductor wafer W is pressed onto the polishing cloth 2 with a predetermined force P. There is.

ところで、前記平行度維持機構10はプレート
4の作動中心Oを半導体ウエーハWと研摩布2と
の接触面、即ち研摩面f上に位置せしめるもので
あつて、具体的には球面軸受にて構成されてい
る。この球面軸受は部材11と部材12とをボル
ト13…にて組付一体化して成るブロツク14
と、該ブロツク14に球面接触するブロツク15
とで構成され、ブロツク14はボールベアリング
16を介して軸3の外周に回転自在に取付られて
いる。又、他方のブロツク15の上部には、その
曲率中心が研摩面f上に位置する半径rの球面座
15aが形成され、該球面座15aはブロツク1
4の下面に形成された当該球面座15aと同一曲
率中心及び同一半径rを有する球状凹面座14a
に滑り接触している。従つて、球面座15aと球
状凹面座14aとで構成される球面軸受の傾動中
心は研摩面f上に位置することとなる。そして、
このブロツク15の下部には前記プレート4がボ
ルト17…にて該ブロツク15に締結された支持
部材18を介して取付支持されており、該ブロツ
ク15の下面には前記空間Sに連通する複数の環
状溝19…が同芯状に形成されている。尚、図
中、20はオイルシールである。
By the way, the parallelism maintaining mechanism 10 positions the operating center O of the plate 4 on the contact surface between the semiconductor wafer W and the polishing cloth 2, that is, on the polishing surface f, and is specifically constructed of a spherical bearing. has been done. This spherical bearing is a block 14 formed by assembling and integrating a member 11 and a member 12 with bolts 13.
and a block 15 in spherical contact with the block 14.
The block 14 is rotatably attached to the outer periphery of the shaft 3 via a ball bearing 16. Further, a spherical seat 15a having a radius r and whose center of curvature is located on the polishing surface f is formed on the upper part of the other block 15.
A spherical concave seat 14a having the same center of curvature and the same radius r as the spherical seat 15a formed on the lower surface of 4.
sliding contact. Therefore, the center of tilt of the spherical bearing composed of the spherical seat 15a and the spherical concave seat 14a is located on the polished surface f. and,
The plate 4 is mounted and supported on the lower part of the block 15 via a support member 18 fastened to the block 15 with bolts 17, and the lower surface of the block 15 has a plurality of plates connected to the space S. The annular grooves 19 are formed concentrically. In addition, in the figure, 20 is an oil seal.

次に本研摩装置の作用を説明する。 Next, the operation of this polishing device will be explained.

薄板状の半導体ウエーハWはプレート4に穿設
された小孔4a…、空間S、軸3内の孔3aを経
て真空ポンプ5によつて引かれる負圧によつてプ
レート4の下面に吸着される。
The thin semiconductor wafer W is attracted to the lower surface of the plate 4 by the negative pressure drawn by the vacuum pump 5 through the small holes 4a bored in the plate 4, the space S, and the hole 3a in the shaft 3. Ru.

一方、定盤1は不図示の駆動機構によつてその
中心軸の回りに一定速度で水平に回転駆動されて
おり、上記半導体ウエーハWは該定盤1上に貼設
された研摩布2上面に所定の力Pにて押圧され
る。すると、半導体ウエーハWと研摩布2との間
には相対滑りが生じ、この滑りによつて半導体ウ
エーハWは不図示のノズルからの研摩剤の供給を
受けながら研摩布2によつて鏡面研摩され、研摩
面fには摩擦力Fが発生する。尚、定盤1上の半
径方向の周速度の相違によつて半導体ウエーハ
W、プレート4及び平行度維持機構10はボール
ベアリング16を介して軸3の周りを回転する。
On the other hand, the surface plate 1 is rotated horizontally around its central axis at a constant speed by a drive mechanism (not shown), and the semiconductor wafer W is placed on the upper surface of the polishing cloth 2 stuck on the surface plate 1. is pressed with a predetermined force P. Then, relative slippage occurs between the semiconductor wafer W and the polishing cloth 2, and due to this slippage, the semiconductor wafer W is mirror-polished by the polishing cloth 2 while being supplied with abrasive from a nozzle (not shown). , a frictional force F is generated on the polished surface f. The semiconductor wafer W, the plate 4, and the parallelism maintaining mechanism 10 rotate around the shaft 3 via the ball bearing 16 due to the difference in the circumferential speed in the radial direction on the surface plate 1.

ところで、プレート4は球面軸受にて構成され
る平行度維持機構10を介して軸3に対して傾動
自在に支持されるため、該プレート4は定盤1の
傾斜に追随して傾く。尚、実際には平行度維持機
構10の球面座15aと球面凹面座14a間には
潤滑油による油膜が形成されており、プレート4
の傾動は極めて円滑になされる。このとき、プレ
ート4は平行度維持機構を構成する球面軸受を介
して軸3に支持され、球面軸受の傾動中心には研
摩面f上に位置するため、半導体ウエーハWの厚
さを無視すれば、プレート4の作動中心Oも研摩
面fに位置することとなるため、研摩面f上に作
用する摩擦力Fの作用点とプレート4の作動中心
Oとが一致し、両者間の距離Lが零(L=0)と
なり、摩擦力Fと距離Lとの積で表わされるとこ
ろのプレート4を傾けようとするモーメントMが
零となり(M=F×0)、研摩面fに摩擦力Fが
作用するにも拘らず、プレート4と定盤1との平
行を厳密に維持することができ、被研摩物たる半
導体ウエーハWに対する高平行度及び高平担度の
研摩加工が可能となる。尚、プレート4の作動中
心0には荷重Pと摩擦力Fの合力Qが図示矢印方
向に作用する。
Incidentally, since the plate 4 is tiltably supported with respect to the shaft 3 via the parallelism maintaining mechanism 10 constituted by a spherical bearing, the plate 4 tilts following the tilt of the surface plate 1. In reality, an oil film of lubricating oil is formed between the spherical seat 15a and the spherical concave seat 14a of the parallelism maintaining mechanism 10, and the plate 4
The tilting is done extremely smoothly. At this time, the plate 4 is supported by the shaft 3 via a spherical bearing that constitutes a parallelism maintaining mechanism, and the center of tilt of the spherical bearing is located on the polishing surface f, so if the thickness of the semiconductor wafer W is ignored, , since the operating center O of the plate 4 is also located on the polishing surface f, the point of application of the frictional force F acting on the polishing surface f coincides with the operating center O of the plate 4, and the distance L between them is The moment M that tries to tilt the plate 4, which is expressed as the product of the frictional force F and the distance L, becomes zero (M=F×0), and the frictional force F is applied to the polished surface f. Despite this, the parallelism between the plate 4 and the surface plate 1 can be maintained strictly, and it is possible to polish the semiconductor wafer W, which is the object to be polished, with high parallelism and high flatness. Note that a resultant force Q of the load P and the frictional force F acts on the operating center 0 of the plate 4 in the direction of the arrow shown in the figure.

第2図に以上説明した本発明に係る研摩装置に
研摩された半導体ウエーハW表面の平坦度の実測
結果を、従来装置にて研摩した場合の実測結果と
の比較において示す。尚、第2図aは半導体ウエ
ーハWのx−x方向の実測結果を、同図bはY−
Y方向の実測結果をそれぞれ示し、図中、実線a
は本発明装置にて研摩した場合、破線bは第10
図に示すプレート追随方式を採用する従来装置に
て研摩した場合、鎖線cは第11図に示すピボツ
ト軸受方式を採用する従来装置にて研摩した場合
の実測結果をそれぞれ示す。又、実測は荷重370
g/cm2、定盤の回転数40rpmの条件の下に行なわ
れ、半導体ウエーハWのプレートへの接着法とし
てはワツクスレス法が用いられた。
FIG. 2 shows actual measurement results of the flatness of the surface of a semiconductor wafer W polished by the polishing apparatus according to the present invention described above, in comparison with actual measurement results when polished by a conventional apparatus. In addition, FIG. 2a shows the actual measurement results of the semiconductor wafer W in the x-x direction, and FIG. 2b shows the actual measurement results in the Y-
The actual measurement results in the Y direction are shown, and the solid line a in the figure
When polished with the device of the present invention, the broken line b is the 10th
The dashed line c shows the actual measurement results when polishing was performed using a conventional device employing the plate following method shown in the figure, and when polishing was performed using the conventional device employing the pivot bearing method shown in FIG. 11, respectively. Also, the actual measurement is load 370
g/cm 2 and the number of rotations of the surface plate was 40 rpm, and a waxless method was used to bond the semiconductor wafer W to the plate.

第2図に示す結果より明らかな如く本発明装置
によれば、半導体ウエーハWの平坦度をその全面
に亘つて極めて高く保つことができる。
As is clear from the results shown in FIG. 2, according to the apparatus of the present invention, the flatness of the semiconductor wafer W can be maintained extremely high over its entire surface.

次に本発明の変更実施例を第3図に示す。尚、
第3図において第1図にて示したと同一要素には
同一符号を付し、それらについての説明は省略す
る。
Next, a modified embodiment of the present invention is shown in FIG. still,
In FIG. 3, the same elements as shown in FIG. 1 are given the same reference numerals, and explanations thereof will be omitted.

本変更実施例においては、平行度維持機構10
を構成する球面軸受のブロツク14,15の凹凸
面座14a,15a間にゴム等を素材とする環状
の軟質弾性体21(具体的にはOリング)を介在
させている。即ち、ブロツク15の球面座15a
の表面には環状の凹溝15bが形成され、該凹溝
15b内に上記軟質弾性体21が嵌設されてい
る。尚、軟質弾性体21の硬度としては、凹凸面
座14a,15a同志が直接金属接触しない程度
に変形する値が好ましい。
In this modified embodiment, the parallelism maintaining mechanism 10
An annular soft elastic body 21 (specifically, an O-ring) made of rubber or the like is interposed between the uneven face seats 14a and 15a of the spherical bearing blocks 14 and 15 that constitute the bearing. That is, the spherical seat 15a of the block 15
An annular groove 15b is formed on the surface of the groove 15b, and the soft elastic body 21 is fitted into the groove 15b. The hardness of the soft elastic body 21 is preferably a value such that the uneven surface seats 14a, 15a are deformed to such an extent that they do not come into direct metal contact with each other.

而して、上記軟質弾性体21を設けることによ
つて平行度維持機構10を構成する球面軸受の作
動抵抗を著しく抵減することができるが、これは
次の理由による。即ち、軟質弾性体21に加わる
力Rと変位lとは第4図の直線dにて示す如く、
比例関係にあり、球面軸受を構成するブロツク1
4,15の凹凸面座14a,15aの間の必要摺
動距離は実際には非常に僅かである。従つて、第
4図に示す如く或る変位lo、或る力Roで平衡を
保つている軟質弾性体21を更にΔlだけ変位さ
せる必要な力はΔRである。上述の如く球面軸受
を構成するブロツク14,15の凹凸面座14
a,15a間の必要摺動距離は実際には非常に僅
かであることから、この凹凸面座14a,15a
間に介設される軟質弾性体21の変位Δlは殆ん
ど零となり(Δl=0)、この変位Δlに比例する力
ΔRも殆んど零となつて(ΔR=0)、結果的にこ
の力ΔRに相当する球面軸受の作動抵抗が著しく
低減することとなる。
By providing the soft elastic body 21, the operating resistance of the spherical bearing constituting the parallelism maintaining mechanism 10 can be significantly reduced for the following reason. That is, the force R and displacement l applied to the soft elastic body 21 are as shown by the straight line d in FIG.
Block 1, which has a proportional relationship and constitutes a spherical bearing
The required sliding distance between the concavo-convex face seats 14a and 15a of No. 4 and 15 is actually very small. Therefore, as shown in FIG. 4, the necessary force to further displace the soft elastic body 21, which is balanced by a certain displacement lo and a certain force Ro, by Δl is ΔR. As mentioned above, the uneven surface seats 14 of the blocks 14 and 15 forming the spherical bearing
Since the necessary sliding distance between a and 15a is actually very small, the uneven surface seats 14a and 15a
The displacement Δl of the soft elastic body 21 interposed between becomes almost zero (Δl=0), and the force ΔR proportional to this displacement Δl also becomes almost zero (ΔR=0), resulting in The operating resistance of the spherical bearing corresponding to this force ΔR is significantly reduced.

次に軟質弾性体として一般に市販されているO
リングを使用した研摩装置(以下、弾性体介在型
装置と称す)と使用しない装置(以下、摺動型装
置と称す)に対して行なつた種々の試験結果を以
下に示す。
Next, O, which is generally commercially available as a soft elastic material,
The results of various tests conducted on a polishing device that uses a ring (hereinafter referred to as an elastic body interposed device) and a device that does not use a ring (hereinafter referred to as a sliding type device) are shown below.

先ず、球面軸受の球面を手で押して該球面軸受
の作動抵抗を手の感触で把握した結果、摺動型装
置では間欠的な動きが感じられ、ひつかかり感が
あつたのに対し、弾性体介在型装置ではスムーズ
な動きが感じられた。又、次式 つれ廻り率=プレート回転数/定盤回転数x100(%) にて定義されるつれ廻り率を両装置に対して算出
した結果、摺動型装置の値が36%であるのに対
し、弾性体介在型装置のそれは89%であつた。因
に、球面軸受が理想状態に近づく程、プレートの
回転数は定盤の回転数に近づき、上記つれ廻り率
の値は高くなる。弾性体介在型置は、Oリングの
使用によつて軸受の抵抗が著しく低減されるの
で、プレートの回転数が定盤の回転数に近づくの
である。
First, we pressed the spherical surface of the spherical bearing with our hands and grasped the operating resistance of the spherical bearing with our hands.As a result, we found that with a sliding type device, intermittent movement was felt and there was a feeling of catching, whereas with an elastic body Smooth movement was felt with the interventional device. In addition, as a result of calculating the slipping rotation rate defined by the following formula = plate rotation speed / surface plate rotation speed x 100 (%) for both devices, the value for the sliding type device is 36%. In contrast, the rate for the elastic body-mediated device was 89%. Incidentally, as the spherical bearing approaches the ideal state, the number of rotations of the plate approaches the number of rotations of the surface plate, and the value of the rotation rate becomes higher. In the elastic body-interposed type, the resistance of the bearing is significantly reduced by using an O-ring, so that the number of rotations of the plate approaches the number of rotations of the surface plate.

つれ廻り率が低くなると、面精度が悪化し、半
導体ウエーハは中心が凸の球面になる場合があ
る。従つて、軸受抵抗を下げてつれ廻り率を高め
るのは、半導体ウエーハの研摩代を均一化するの
に効果がある。
When the rotation rate becomes low, the surface precision deteriorates, and the semiconductor wafer may become a spherical surface with a convex center. Therefore, lowering the bearing resistance and increasing the rolling rate is effective in making the polishing amount of the semiconductor wafer uniform.

軸受の抵抗低下に伴う半導体ウエーハ面の研摩
代の均一化についてのもう一つの効果について説
明する。
Another effect of equalizing the polishing amount on the semiconductor wafer surface due to the reduction in bearing resistance will be explained.

理想的な状態では定盤とプレートは平行で密着
しているが、定盤の上に貼設された研摩布(クロ
ス)が定盤に均一に貼設されなかつたり、研摩布
自身が厚さに不均一があつたり、或は研摩作業の
進行により底部が摩耗した等の理由で、プレート
が定盤に対して部分的に密着せず、平行度を失う
場合が生ずる。斯かる状態は、プレートへの研摩
軸からの荷重域はプレート自身の自重で解消させ
る等であるが、摺動型装置ではその摺動面の摩擦
のため迅速な姿勢調整が困難であり、しばしば半
導体ウエーハの研摩代の不均一性をもたらす。
In an ideal situation, the surface plate and plate are parallel and in close contact, but the abrasive cloth attached to the surface plate may not be affixed evenly to the surface plate, or the abrasive cloth itself may be too thick. The plate may not be in close contact with the surface plate partially due to uneven surfaces or the bottom portion is worn out as the polishing process progresses, resulting in a loss of parallelism. In such a situation, the load applied to the plate from the polishing shaft is resolved by the plate's own weight, but with sliding type devices, it is difficult to quickly adjust the posture due to the friction of the sliding surface, and this often occurs. This results in non-uniformity in the polishing amount of semiconductor wafers.

しかしながら、前述のように弾性体介在型装置
において、例えばOリングを使用した場合には軸
受の抵抗が著しく低減するので、上記プレートの
姿勢調整は極めて迅速に行われ、常にプレートは
定盤の多少の凹凸にも拘らずこれに密着し、定盤
へのプレートの平行性は安全に保持される。その
結果、半導体ウエーハの研摩代の均一性は著しく
向上する。一方、摺動型装置の場合では、半導体
ウエーハの研摩代がその直径の一方で5μmに対
し、他方で15μmとなるような偏つた研摩が行わ
れる場合もある。
However, as mentioned above, in an elastic body-interposed device, for example, when an O-ring is used, the resistance of the bearing is significantly reduced, so the attitude adjustment of the plate is performed extremely quickly, and the plate is always positioned slightly above the surface plate. Despite the unevenness of the plate, it adheres closely to this, and the parallelism of the plate to the surface plate is safely maintained. As a result, the uniformity of the polishing amount of the semiconductor wafer is significantly improved. On the other hand, in the case of a sliding type device, uneven polishing may be performed such that the polishing allowance of the semiconductor wafer is 5 μm on one side of the diameter and 15 μm on the other.

第5図において、i,jは弾性体介在型装置、
g,hは摺動型装置でOリングのような弾性体が
ない場合の半導体ウエーハの研摩代の実測値を示
す。
In FIG. 5, i and j are elastic body interposed devices;
g and h indicate actual measured values of the polishing amount of a semiconductor wafer in the case of a sliding type device without an elastic body such as an O-ring.

尚、本発明は第6図に示すように死荷重W0
印加する方式の研摩装置に対しても適用し得る。
又、球面軸受はその加工が困難であること、該球
面軸受の作動距離は実際には非常に僅かであるこ
とに鑑み、前記平行度維持機構10を第7図に示
す如き互いに嵌合する円錐凹面30a、円錐凸面
30bにて構成される円錐軸受30にて構成し、
該円錐軸受30の上記円錐凹凸面30a,30b
間に軟質弾性体21を介在させてもよい。更に、
以上は被研摩物として特に半導体ウエーハを取り
上げたが、本発明装置はその他任意の被研摩物を
加工する装置に対して適用し得ることは勿論であ
る。
Incidentally, the present invention can also be applied to a polishing apparatus of a type that applies a dead load W 0 as shown in FIG.
In addition, considering that machining of spherical bearings is difficult and that the working distance of spherical bearings is actually very short, the parallelism maintaining mechanism 10 is constructed of cones that fit into each other as shown in FIG. Consists of a conical bearing 30 composed of a concave surface 30a and a conical convex surface 30b,
The conical uneven surfaces 30a and 30b of the conical bearing 30
A soft elastic body 21 may be interposed between them. Furthermore,
Although a semiconductor wafer has been specifically discussed as the object to be polished, the apparatus of the present invention can of course be applied to an apparatus for processing any other object to be polished.

(発明の効果) 以上の説明で明らかな如く本発明によれば、研
摩装置のプレートの作動中心を研摩面上に位置せ
しめる平行度維持機構を設けたため、該プレート
を傾けようとするモーメントを常に零とすること
ができ、研摩面に摩擦力が作用するにも拘らず、
プレートと定盤との平行を厳密に維持することが
でき、これによつて高平行度及び高平坦度の研摩
加工が可能となるという効果が得られる。
(Effects of the Invention) As is clear from the above description, according to the present invention, a parallelism maintaining mechanism is provided that positions the operating center of the plate of the polishing device on the polishing surface, so that the moment that tends to tilt the plate is constantly suppressed. Despite the frictional force acting on the polished surface,
The parallelism between the plate and the surface plate can be strictly maintained, thereby achieving the effect that polishing with high parallelism and high flatness can be performed.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明に係る研摩装置の縦断面図、第
2図は同研摩装置にて研摩された半導体ウエーハ
表面の平坦度実測結果を示すグラフ、第3図は本
発明の変更実施例に係る研摩装置の一部破断側面
図、第4図は軟質弾性体に加わる力と変位との関
係を示す図、第5図は第3図に示す研摩装置にて
研摩された半導体ウエーハの研摩代の均一性の実
測結果を示すグラフ、第6図及び第7図は本発明
の別実施例を示す縦断面図、第8図は研摩装置に
よる研摩加工の原理説明図、第9図乃至第12図
は定盤とプレートとの平行を保つ各種機構の従来
例を示す図である。 1……定盤、2……研摩布、3……軸、4……
プレート、10……平行度維持機構、14,15
……ブロツク、14a……球状凹面座、15a…
…球面座、21……軟質弾性体、30……円錐軸
受。
Fig. 1 is a longitudinal cross-sectional view of a polishing apparatus according to the present invention, Fig. 2 is a graph showing the actual measurement results of the flatness of the surface of a semiconductor wafer polished by the same polishing apparatus, and Fig. 3 is a diagram showing a modified embodiment of the present invention. A partially cutaway side view of such a polishing device, FIG. 4 is a diagram showing the relationship between force applied to a soft elastic body and displacement, and FIG. 5 is a polishing amount of a semiconductor wafer polished by the polishing device shown in FIG. 3. FIGS. 6 and 7 are longitudinal cross-sectional views showing another embodiment of the present invention, FIG. 8 is a diagram explaining the principle of polishing using a polishing device, and FIGS. 9 to 12 The figure shows conventional examples of various mechanisms for maintaining parallelism between the surface plate and the plate. 1...Surface plate, 2...Abrasive cloth, 3...Shaft, 4...
Plate, 10... Parallelism maintenance mechanism, 14, 15
...Block, 14a...Spherical concave seat, 15a...
... Spherical seat, 21 ... Soft elastic body, 30 ... Conical bearing.

Claims (1)

【特許請求の範囲】 1 傾動自在なプレートに保持された被研摩物を
所定速度で回転する定盤上に貼設された研摩布上
に所定の力で押圧することによつて該被研摩物表
面を鏡面研摩するようにした研摩装置において、
前記プレートを前記定盤の上方に垂設される軸に
平行度維持機構を介して支持せしめ、該平行度維
持機構を、その傾動中心が前記被研摩物と研摩布
との接触面上に位置する球面軸受を含んで構成し
たことを特徴とする研摩装置。 2 前記球面軸受は、その曲率中心が前記被研摩
物と研摩布との接触面上に位置する凹凸球面から
成る凹凸面座を有することを特徴とする特許請求
の範囲第1項記載の研摩装置。 3 前記凹凸面座の間にゴム等の軟質弾性体を介
設したことを特徴とする特許請求の範囲第2項記
載の研摩装置。 4 前記軟質弾性体は、Oリングにて構成される
ことを特徴とする特許請求の範囲第3項記載の研
摩装置。
[Claims] 1. The object to be polished, which is held on a tiltable plate, is pressed with a predetermined force onto an abrasive cloth attached to a surface plate that rotates at a predetermined speed. In a polishing device designed to mirror-polish a surface,
The plate is supported by a shaft vertically disposed above the surface plate via a parallelism maintaining mechanism, and the tilting center of the parallelism maintaining mechanism is positioned on the contact surface between the object to be polished and the polishing cloth. A polishing device characterized in that it includes a spherical bearing. 2. The polishing device according to claim 1, wherein the spherical bearing has a concave-convex seat made of a concave-convex spherical surface whose center of curvature is located on the contact surface between the object to be polished and the polishing cloth. . 3. The polishing device according to claim 2, wherein a soft elastic body such as rubber is interposed between the uneven surface seats. 4. The polishing device according to claim 3, wherein the soft elastic body is constituted by an O-ring.
JP61205759A 1986-09-03 1986-09-03 Polishing machine Granted JPS6362668A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61205759A JPS6362668A (en) 1986-09-03 1986-09-03 Polishing machine

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61205759A JPS6362668A (en) 1986-09-03 1986-09-03 Polishing machine

Publications (2)

Publication Number Publication Date
JPS6362668A JPS6362668A (en) 1988-03-18
JPH0317622B2 true JPH0317622B2 (en) 1991-03-08

Family

ID=16512193

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61205759A Granted JPS6362668A (en) 1986-09-03 1986-09-03 Polishing machine

Country Status (1)

Country Link
JP (1) JPS6362668A (en)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6220606B1 (en) 1991-11-26 2001-04-24 Nippon Gasket Co., Ltd. Metallic gasket
US5377451A (en) * 1993-02-23 1995-01-03 Memc Electronic Materials, Inc. Wafer polishing apparatus and method
US5423558A (en) * 1994-03-24 1995-06-13 Ipec/Westech Systems, Inc. Semiconductor wafer carrier and method
JP3489755B2 (en) * 1994-08-05 2004-01-26 日本ガスケット株式会社 Metal gasket
US5908530A (en) * 1995-05-18 1999-06-01 Obsidian, Inc. Apparatus for chemical mechanical polishing
JP3230959B2 (en) * 1995-09-05 2001-11-19 日本ガスケット株式会社 Metal gasket
JP3230966B2 (en) * 1995-10-09 2001-11-19 日本ガスケット株式会社 Metal gasket
US5791978A (en) * 1996-11-14 1998-08-11 Speedfam Corporation Bearing assembly for wafer planarization carrier
US6110025A (en) * 1997-05-07 2000-08-29 Obsidian, Inc. Containment ring for substrate carrier apparatus
US6116990A (en) * 1997-07-25 2000-09-12 Applied Materials, Inc. Adjustable low profile gimbal system for chemical mechanical polishing
TWI238754B (en) * 2002-11-07 2005-09-01 Ebara Tech Inc Vertically adjustable chemical mechanical polishing head having a pivot mechanism and method for use thereof
US7156946B2 (en) 2003-04-28 2007-01-02 Strasbaugh Wafer carrier pivot mechanism
CN114770339B (en) * 2022-06-15 2022-09-06 沃中孚精密主轴昆山有限公司 Floating power polishing head for mirror polishing and polishing method

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS571653A (en) * 1980-05-29 1982-01-06 Shibayama Kikai Kk Parallel stabilizer of surface lapping machine or polishing machine

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS571653A (en) * 1980-05-29 1982-01-06 Shibayama Kikai Kk Parallel stabilizer of surface lapping machine or polishing machine

Also Published As

Publication number Publication date
JPS6362668A (en) 1988-03-18

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