JPH03175622A - Manufacturing apparatus for semiconductor device - Google Patents

Manufacturing apparatus for semiconductor device

Info

Publication number
JPH03175622A
JPH03175622A JP31605789A JP31605789A JPH03175622A JP H03175622 A JPH03175622 A JP H03175622A JP 31605789 A JP31605789 A JP 31605789A JP 31605789 A JP31605789 A JP 31605789A JP H03175622 A JPH03175622 A JP H03175622A
Authority
JP
Japan
Prior art keywords
core tube
nitrogen
gas
curtain
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP31605789A
Other languages
Japanese (ja)
Inventor
Shoichiro Azuma
東 正一郎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Kyushu Ltd
Original Assignee
NEC Kyushu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Kyushu Ltd filed Critical NEC Kyushu Ltd
Priority to JP31605789A priority Critical patent/JPH03175622A/en
Publication of JPH03175622A publication Critical patent/JPH03175622A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To suppress the entrainment of air generated when a mother board is inputted into a core tube and to prevent the formation of a natural oxide film on a substrate by providing a nitrogen-gas jetting pipe and a nitrogen-gas sucking pipe for forming a nitrogen curtain on the input side of the core tube. CONSTITUTION:In a manufacturing apparatus of semiconductor devices having a core tube 1, a nitrogen-gas jetting pipe 2A and a nitrogen-gas sucking pipe 2B for forming a nitrogen curtain 7 are provided at the input side of the core tube 1. For example, a device for heat-treating the semiconductor device substrates 4 is formed so that a mother board 3 on which the semiconductor substrates 4 are mounted is inputted into and taken out of the core tube 1 by using a drawing rod 5. Furthermore, an exhaust port 6 for gas in the core tube and the N2-gas jetting pipe 2A and the N2-gas sucking pipe 2B for forming the N2 curtain 7 are provided at the outside of the output/input port of the core tube 1 in this structure. Since the mother board 3 passes through the N2 curtain 7 when the motor board 3 is conveyed into the core tube 1, the occurrence of the entrainment of air as in a conventional apparatus does not occur.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は半導体装置の製造装置に関し、特に炉芯管を備
えた半導体基板の熱処理装置に関する。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor device manufacturing apparatus, and more particularly to a semiconductor substrate heat treatment apparatus equipped with a furnace core tube.

〔従来の技術〕[Conventional technology]

従来、例えば半導体基板上に酸化膜を形成するために用
いられる熱処理装置では、炉芯管内を窒素で満たした状
態で、マザーボードにのせた半導体基板を炉芯管内に出
し入れできる構造となっていた。
Conventionally, a heat treatment apparatus used for forming an oxide film on a semiconductor substrate, for example, has a structure in which a semiconductor substrate placed on a motherboard can be taken in and out of the furnace core tube while the inside of the furnace core tube is filled with nitrogen.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

しかしながら、上述した従来の酸化膜を形成する熱処理
では、マザーボードを炉芯管内に入れる時に、空気のま
き込みが起こり、半導体基板上に自然酸化膜が形成され
、炉芯管内で形成される酸化膜に比べ質が劣っている為
、半導体装置の製造歩留を低下させる要因となっていた
However, in the conventional heat treatment for forming an oxide film mentioned above, when the motherboard is put into the furnace core tube, air is drawn in, a natural oxide film is formed on the semiconductor substrate, and an oxide film is formed inside the furnace core tube. Since the quality is inferior to that of the previous one, it has been a factor that lowers the manufacturing yield of semiconductor devices.

〔課題を解決するための手段〕[Means to solve the problem]

本発明の半導体装置の製造装置は、炉芯管を備えた半導
体装置の製造装置において、前記炉芯管の入口側に窒素
カーテンを形成するための窒素ガス噴出管と窒素ガス吸
入管とを設けたものである。
The semiconductor device manufacturing apparatus of the present invention includes a semiconductor device manufacturing apparatus equipped with a furnace core tube, and includes a nitrogen gas ejection tube and a nitrogen gas suction tube for forming a nitrogen curtain on the inlet side of the furnace core tube. It is something that

〔実施例〕〔Example〕

次に、本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.

第1図は本発明の一実施例の断面図である。FIG. 1 is a sectional view of an embodiment of the present invention.

第1図において、半導体装置の製造装置は、半導体基板
の熱処理を行う装置であり、半導体基板4が載ったマザ
ーボード3を引き出し棒5を使って炉芯管1内に出し入
れを行うように構成されている。更に、炉芯管の出入り
口外側に炉芯管内ガスの排気口6と、N2カーテン7を
形成するためのN2ガス噴出管2AとN2ガス吸入管2
Bとが設けられた構造となっている。なお8は反応ガス
導入管である。
In FIG. 1, the semiconductor device manufacturing apparatus is an apparatus for heat-treating semiconductor substrates, and is configured so that a motherboard 3 on which a semiconductor substrate 4 is mounted can be taken in and out of a furnace core tube 1 using a pull-out rod 5. ing. Further, an exhaust port 6 for the gas inside the furnace core tube is provided outside the entrance and exit port of the furnace core tube, and an N2 gas ejection tube 2A and an N2 gas suction tube 2 for forming an N2 curtain 7 are provided.
It has a structure in which B is provided. Note that 8 is a reaction gas introduction pipe.

このように構成された本実施例によれば、マサ−ボード
3を炉芯管1内に搬入する場合N2カーテン7を通過す
るため、従来のように空気のまき込みを起すことはなく
なる。
According to this embodiment configured as described above, when the motherboard 3 is carried into the furnace core tube 1, it passes through the N2 curtain 7, so that air is not drawn in as in the conventional case.

〔発明の効果〕〔Effect of the invention〕

以上説明したように本発明は、炉芯管の出入り口の外側
に窒素カーテンを形成するための窒素ガス噴出管と窒素
ガス吸入管を配置することにより、マザーボードを炉芯
管内に入れる時に発生ずる空気のまき込みを抑えること
ができる。このため半導体基板上に自然酸化膜が形成す
るのを防ぐことができるため、半導体装置の製造歩留り
を向上させることができる。
As explained above, the present invention has an advantage in that the air generated when the motherboard is inserted into the furnace core tube is removed by arranging the nitrogen gas ejection tube and the nitrogen gas suction tube to form a nitrogen curtain outside the entrance and exit of the furnace core tube. It is possible to suppress the ingestion of water. Therefore, it is possible to prevent the formation of a natural oxide film on the semiconductor substrate, thereby improving the manufacturing yield of semiconductor devices.

【図面の簡単な説明】 第1図は本発明の一実施例の断面図である。 1・・・炉芯管、2A・・・N2ガス噴出管、2B・・
・N2ガス吸入管、3・・・マザーボード、4・・・半
導体基板、5・・・引き出し棒、6・・・排気口、7・
・・N2カーテン、8・・・反応カス導入管。
BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a sectional view of an embodiment of the present invention. 1...Furnace core tube, 2A...N2 gas ejection pipe, 2B...
・N2 gas inlet pipe, 3... Motherboard, 4... Semiconductor board, 5... Pull-out rod, 6... Exhaust port, 7...
...N2 curtain, 8...reaction waste introduction pipe.

Claims (1)

【特許請求の範囲】[Claims]  炉芯管を備えた半導体装置の製造装置において、前記
炉芯管の入口側に窒素カーテンを形成するための窒素ガ
ス噴出管と窒素ガス吸入管とを設けたことを特徴とする
半導体装置の製造装置。
A semiconductor device manufacturing apparatus equipped with a furnace core tube, characterized in that a nitrogen gas ejection tube and a nitrogen gas suction tube for forming a nitrogen curtain are provided on the inlet side of the furnace core tube. Device.
JP31605789A 1989-12-04 1989-12-04 Manufacturing apparatus for semiconductor device Pending JPH03175622A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP31605789A JPH03175622A (en) 1989-12-04 1989-12-04 Manufacturing apparatus for semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP31605789A JPH03175622A (en) 1989-12-04 1989-12-04 Manufacturing apparatus for semiconductor device

Publications (1)

Publication Number Publication Date
JPH03175622A true JPH03175622A (en) 1991-07-30

Family

ID=18072782

Family Applications (1)

Application Number Title Priority Date Filing Date
JP31605789A Pending JPH03175622A (en) 1989-12-04 1989-12-04 Manufacturing apparatus for semiconductor device

Country Status (1)

Country Link
JP (1) JPH03175622A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100295635B1 (en) * 1997-12-15 2001-10-24 김영환 Apparatus for preventing growth of natural oxide layer in vertical oxidation furnace

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100295635B1 (en) * 1997-12-15 2001-10-24 김영환 Apparatus for preventing growth of natural oxide layer in vertical oxidation furnace

Similar Documents

Publication Publication Date Title
JPH03175622A (en) Manufacturing apparatus for semiconductor device
JPH04188616A (en) Diffusion furnace device for heat treatment
JPS6367729A (en) Semiconductor heat-treating apparatus
JPH11207131A (en) Small-sized exhaust gas treating device
JPS53106573A (en) Gas treatment method of semiconductor wafers
JPH0362516A (en) Semiconductor manufacturing device
JPS58175629U (en) semiconductor manufacturing equipment
JPS6468921A (en) Heat treatment of semiconductor wafer
JPS6130235U (en) plasma etching equipment
JPS6334921A (en) Diffusion furnace apparatus
JPS57121234A (en) Plasma processing and device thereof
JPS5287371A (en) Production of semiconductor device
JPS57211728A (en) Manufacture of semiconductor device
JPH0297033A (en) Wire bonding device
JPS60138912A (en) Heat treatment furnace
JPH0210089A (en) Ambient air shielding device
JPS62185313A (en) Diffusion furnace device
JPH02125619A (en) Semiconductor device manufacturing equipment
JPH04130617A (en) Vacuum treatment apparatus
JPH03148113A (en) Heating furnace for manufacturing semiconductor
JPS6439722A (en) Diffusing furnace apparatus
JPH0471227A (en) Low pressure vapor phase growth equipment
JPS58170829U (en) Semiconductor device manufacturing equipment
JPS6489514A (en) Diffusion furnace for manufacturing semiconductor integrated circuit
JPS63164431A (en) Dry etching system