JPH03173101A - Thin film resistor - Google Patents
Thin film resistorInfo
- Publication number
- JPH03173101A JPH03173101A JP1311418A JP31141889A JPH03173101A JP H03173101 A JPH03173101 A JP H03173101A JP 1311418 A JP1311418 A JP 1311418A JP 31141889 A JP31141889 A JP 31141889A JP H03173101 A JPH03173101 A JP H03173101A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- resistance value
- film
- pad
- nicr
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 59
- 229910001120 nichrome Inorganic materials 0.000 claims abstract description 23
- 238000009966 trimming Methods 0.000 claims abstract description 23
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 claims abstract description 19
- 239000000758 substrate Substances 0.000 claims description 5
- 239000010408 film Substances 0.000 abstract description 24
- 229910004479 Ta2N Inorganic materials 0.000 abstract description 10
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract description 4
- 230000032683 aging Effects 0.000 abstract description 3
- 239000007772 electrode material Substances 0.000 abstract description 2
- 230000001105 regulatory effect Effects 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 4
- 239000010931 gold Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- 239000011195 cermet Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は薄膜ハイブリッドＩＣ等で使用する薄膜抵抗体
に関し、更に詳しくは、Ｔａ２Ｎ薄膜とＮｉＣｒ薄膜と
を直列に配置した薄膜抵抗体に関するものである。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a thin film resistor used in thin film hybrid ICs, etc., and more specifically relates to a thin film resistor in which a Ta2N thin film and a NiCr thin film are arranged in series. be.
［従来の技術］
寸法精度が廠しく、高い信頼性と高周波特性が要求され
る高周波回路等の分野ではアルミナ基板を用いたｉａハ
イブリッドＩＣが広く使用されている。このような薄膜
ハイブリッドＩＣにおいては、回路を構成している薄膜
抵抗体の精度がＩＣの特性に大きな影響を与える。その
ため高精度で且つ高安定性の薄膜抵抗体の開発が強く望
まれている。[Prior Art] IA hybrid ICs using alumina substrates are widely used in fields such as high frequency circuits that require sharp dimensional accuracy, high reliability, and high frequency characteristics. In such a thin film hybrid IC, the accuracy of the thin film resistor forming the circuit has a great influence on the characteristics of the IC. Therefore, the development of highly accurate and highly stable thin film resistors is strongly desired.
従来のＩＪＩＩＩ砥抗体としては、タンタル系、ニクロ
ム系、サーメット系等があるが、主に用いられているの
はＴａ２Ｎ （窒化タンタル）である、アルミナ基板上
にＴａ２Ｎ薄膜をスパッタリングによって成膜し、電極
として金等を真空蒸着した後、電極パッド及び抵抗体パ
ターンをフォトリソグラフィー技術等によってバターニ
ングする。パターニングした抵抗体をレーザトリミング
によって抵抗値の微調整し、所定０抵抗値を持った薄膜
抵抗体を得る。Conventional IJIII abrasive antibodies include tantalum-based, nichrome-based, cermet-based, etc., but the one mainly used is Ta2N (tantalum nitride).A thin Ta2N film is formed on an alumina substrate by sputtering. After vacuum-depositing gold or the like as an electrode, the electrode pad and resistor pattern are patterned by photolithography or the like. The resistance value of the patterned resistor is finely adjusted by laser trimming to obtain a thin film resistor having a predetermined zero resistance value.
［発明が解決しようとする課題］
Ｔａｇ Ｎ薄膜抵抗体は抵抗温度係数が小さいという優
れた特徴があるが、レーザトリミングを受けると、その
時の熱的影響によって表面が酸化され、抵抗値の経時的
変化が大きくなる欠点がある。[Problems to be Solved by the Invention] Tag N thin film resistors have an excellent feature of having a small resistance temperature coefficient, but when laser trimmed, the surface is oxidized due to the thermal effect at that time, and the resistance value changes over time. The disadvantage is that the changes are large.
本発明の目的は、抵抗温度係数が小さくレーザトリミン
グ後の経時変化が少ない、高精度で且つ高安定性の薄膜
抵抗体を提供することにある。An object of the present invention is to provide a highly accurate and highly stable thin film resistor with a small resistance temperature coefficient and little change over time after laser trimming.
［課題を解決するための手段］
上記の目的を達成できる本発明の薄膜抵抗体は、基板上
に第１の電極パッドと、Ｔａ２Ｎ薄膜の蛇行パターンと
２ＮｉＣｒ１膜のトリミングバッドと、第２の１１橿パ
ツドとを直列に、それらが一部で互いに重なり合うよう
に設けたものである。[Means for Solving the Problems] A thin film resistor of the present invention capable of achieving the above object has a first electrode pad, a meandering pattern of a Ta2N thin film, a trimming pad of a 2NiCr1 film, and a second electrode pad on a substrate. The rod pads are arranged in series so that they partially overlap each other.
ここで両薄膜は、全抵抗値に占めるＮｉＣｒ薄膜の抵抗
値の割合が２，２〜１６．２％程度になるようにするの
が望ましい。Here, it is desirable that the ratio of the resistance value of the NiCr thin film to the total resistance value of both thin films is about 2.2 to 16.2%.
［作用コ
Ｔａ２Ｎ″ｉｉＩ膜の抵抗温度係数は低い、それに対し
てＮｉＣｒ３ｍ膜は抵抗温度係数はやや太きいが、Ｔａ
２Ｎ薄膜に比べてトリミング後の経時変化が少ない、従
って本発明のようにＴａｚＮ薄膜とＮｉＣｒ薄膜とによ
って抵抗体を椿成すると、抵抗値の大部分を占める７ａ
２Ｎ薄１漠の蛇行パターンの部分によって低い抵抗温度
係数を実現でき２ＮｉＣｒ薄膜のトリミングパッドの部
分でトリミングを行うため抵抗値の経時変化が少なくな
る。[Effects] The temperature coefficient of resistance of the Ta2N''iii film is low, whereas the temperature coefficient of resistance of the NiCr3m film is somewhat thick, but the temperature coefficient of resistance of the Ta2N''iii film is low.
Compared to a 2N thin film, there is less change over time after trimming.Therefore, when a resistor is made of a TazN thin film and a NiCr thin film as in the present invention, 7a accounts for most of the resistance value.
A low temperature coefficient of resistance can be achieved by the meandering pattern portion of the 2N thin film, and since trimming is performed at the trimming pad portion of the 2NiCr thin film, changes in resistance value over time are reduced.
更にＴａｘ Ｎ薄膜は抵抗値の経時変化がプラス側（抵
抗値が増大する側）に移行するの対してＮｉＣｒ薄膜は
トリミングした時に逆に経時変化がマイナス側に変化す
るため、それらの作用が打ち消し合って全体として経時
変化が小さくなる。全抵抗値に占めるＮｉＣｒ１τ膜の
ｌｆｆ；抗値の割合を２．２〜１６．２％にすると、経
時変化における抵抗許容誤差を±０．０５％内に収める
ことができる。Furthermore, the change in resistance value over time of the Tax N thin film shifts to the positive side (the side where the resistance value increases), whereas the change over time of the NiCr thin film changes to the negative side when trimmed, so these effects are canceled out. As a result, changes over time become smaller overall. When the ratio of lff;resistance value of the NiCr1τ film to the total resistance value is set to 2.2 to 16.2%, the resistance tolerance due to aging can be kept within ±0.05%.
［実施例］
第１図及び第２図は本発明に係る薄膜抵抗体の一実施例
を示している。アルミナ基板ｌＯ上に第１の電極バッド
１２と、Ｔａ□ＮｇＩ膜の蛇行パターン１４と２Ｎｉｃ
ｒｌ膜のトリミングパッド１６と、第２の電極バンド１
日とを直列に、それらが一部で重なり合うように設けて
いる。この実施例では先ずスパッタリングによってＴａ
ｔＮＷｉ膜を、次いでＮｉＣｒ薄膜をそれぞれ成膜する
。その後、電極材料（例えばＡｕ）のｇＪ膜を真空蒸着
により成膜する。そしてフォトリソグラフィー技術を用
いて抵抗体部分と主権部分を所定の形状にパターニング
する。Ｔａ。[Example] FIGS. 1 and 2 show an example of a thin film resistor according to the present invention. A first electrode pad 12, a meandering pattern 14 of Ta□NgI film and 2Nic
RL membrane trimming pad 16 and second electrode band 1
The sun and sun are arranged in series so that they partially overlap. In this example, Ta was first formed by sputtering.
A tNWi film and then a NiCr thin film are formed. Thereafter, a gJ film of an electrode material (for example, Au) is formed by vacuum evaporation. Then, the resistor portion and the sovereign portion are patterned into a predetermined shape using photolithography technology. Ta.
Ｎ薄膜の蛇行パターン１４が全抵抗値の大部分を占め、
大体の抵抗値を決定する。抵抗値の微調整はＮ；ｃｒＦ
ｉｌｌ！のトリミングバッド１６をレーザトリミングす
ることにより行う、レーザトリミング個所を７１号２０
で示す。The meandering pattern 14 of the N thin film occupies most of the total resistance value,
Determine the approximate resistance value. Fine adjustment of resistance value is N; crF
ill! 71 No. 20 is performed by laser trimming the trimming pad 16 of
Indicated by
ＴａｘＮＲ膜とＮｉＣｒ薄膜についての耐熱試験（１５
０℃−１０００時間）後の抵抗値変化率ΔＲ／Ｒは次表
のようになる。なお薄膜パターンは５０Ω／口、トリミ
ング条件は電力が０．４Ｗ、ピッチが１３０ＩＪｍであ
る。Heat resistance test for TaxNR film and NiCr thin film (15
The resistance value change rate ΔR/R after 0° C.-1000 hours is as shown in the following table. Note that the thin film pattern has a resistance of 50 Ω/hole, and the trimming conditions are a power of 0.4 W and a pitch of 130 IJm.
この結果からＴａｘ Ｎ薄膜とＮｉＣｒ薄膜の併用（本
発明）にした時、抵抗値変化ΔＲを雰にするための両者
の比率を単純に計算すると、全抵抗値に対してＴ ａ
ｔ Ｎ ７ｉｉＰａの抵抗値が杓９０ｏ／６２ＮｉＣｒ
薄膜の抵抗値が約１０％になる。しかしこの比率は”Ｃ
ｒｙ膜のレーザトリミング量によって多少変動する。From this result, when using both the Tax N thin film and the NiCr thin film (the present invention), simply calculating the ratio of the two to make the resistance change ΔR the same as the total resistance value, T a
The resistance value of tN 7iiPa is 90o/62NiCr
The resistance value of the thin film is approximately 10%. However, this ratio is “C
It varies somewhat depending on the amount of laser trimming of the ry film.
そこでＴａよＮ薄膜の抵抗値を９０Ω２ＮｉＣｒ薄膜の
抵抗値を１０Ωとした時のそれぞれの抵抗値変化と、両
者の併用型の抵抗１直変化を第３図に示す＊ Ｔａｘ
Ｎ−ＮｉＣｒ併用型にするとＴａｔ Ｎ薄膜とＮｉＣｒ
薄膜の抵抗値変化が打ち消され、抵抗値変化ΔＲを極め
て小さくできることが分かる。Therefore, Figure 3 shows the resistance changes when the resistance value of the Ta and N thin films is set to 90Ω, and the resistance value of the NiCr thin film is set to 10Ω, as well as the linear resistance changes when both are combined. *Tax
If N-NiCr combination type is used, TatN thin film and NiCr
It can be seen that the change in resistance value of the thin film is canceled out, and the change in resistance value ΔR can be made extremely small.
第４図はＴａｘ Ｎ薄膜とＮ ｉ Ｃｒ薄膜にレーザト
リミングを行った後の抵抗値変化率ΔＲ／Ｒを示してい
る。測定は１５０℃で１０００時間経過するまで行って
いる。Ｎ ｉ Ｃｒ ｉ’！膜の特性データは第３図に
示すものと同じである。第４図からＴａｔＮ薄膜とＮｉ
Ｃｒ薄膜を比較した場合、ＴａｚＮ薄膜の方が１０倍近
く抵抗値変化率が大きくなり２ＮｉＣｒ１膜の方がレー
ザトリミングに通していることが分かる。FIG. 4 shows the rate of change in resistance value ΔR/R after laser trimming was performed on the Tax N thin film and the N i Cr thin film. Measurements were carried out at 150°C until 1000 hours had passed. N i Cr i'! The film property data are the same as shown in FIG. From Figure 4, TatN thin film and Ni
When comparing the Cr thin films, it can be seen that the TazN thin film has a resistance change rate nearly 10 times larger, and the 2NiCr1 film can pass laser trimming better.
第５図は、全抵抗値に占めるＮ ｉ Ｃｒ Ｅｉｌ１９
の抵抗値の割合に対して抵抗値変化率ΔＲ／Ｒを求めた
ものである。データは耐熱試験（１５０’Ｃ−］ ００
０時間）後の測定値である。目標とする抵抗値変化率Δ
Ｒ／Ｒを±０．０５％以内に設定すると、第５図からＮ
ｉＣｒ薄膜の抵抗値範囲は２．２〜１６．２％となる。Figure 5 shows the proportion of N i Cr Eil19 in the total resistance value.
The resistance value change rate ΔR/R is calculated for the ratio of the resistance value. Data is heat resistance test (150'C-) 00
This is the measured value after 0 hours). Target resistance value change rate Δ
If R/R is set within ±0.05%, from Figure 5, N
The resistance value range of the iCr thin film is 2.2 to 16.2%.
この範囲で用いると極めて経時変化の少ない薄膜抵抗体
を得ることができる。When used within this range, a thin film resistor with very little change over time can be obtained.
［発明の効果］
本発明では抵抗値の大部分がＴａ２ＮＦｉ膜によって占
められているため、全体として抵抗温度係数の小さい薄
Ｈ々抵抗体が得られる。またレーザトリミングするのは
Ｎ ｉ Ｃｒ ｐ４膜で作られたトリミングパ・ノドで
あるため、その特性上、抵抗値の経時変化は小さい。更
に抵抗値の経時変化はＴ ａ ｔ Ｎ薄膜がプラス側に
変化するのに対してＮｉＣｒ薄膜はトリミングした時に
マイナス側であり、互いに打ち消し合う方向であるため
全体としての経時変化はより一層小さく抑えることがで
きる。[Effects of the Invention] In the present invention, since most of the resistance value is accounted for by the Ta2NFi film, a thin H2 resistor having a small temperature coefficient of resistance as a whole can be obtained. Further, since the laser trimming is performed using a trimming pad made of a NiCr p4 film, due to its characteristics, the change in resistance value over time is small. Furthermore, the change in resistance value over time changes to the positive side for the T a t N thin film, while the NiCr thin film changes to the negative side when trimmed, and since the directions cancel each other out, the overall change over time is kept even smaller. be able to.
これらの結果、本発明により得られる薄膜抵抗体は高精
度で且つ高安定性のものとなる。As a result, the thin film resistor obtained by the present invention has high precision and high stability.
特に全抵抗値に占めるＮｉＣｒ薄膜の抵抗値ノＩＩ、１
合を２．２〜１６．２％の範囲内とすると、経時変化に
おける抵抗値許容誤差を±０．０５％内に収めることが
できる。In particular, the resistance value of the NiCr thin film in the total resistance value II, 1
If the resistance value is within the range of 2.2 to 16.2%, the resistance value tolerance due to aging can be kept within ±0.05%.
第１図は本発明に係る薄膜抵抗体の一実施例を示す断面
図、第２図はその平面図である。また第３図はＴａ２Ｎ
３膜とＮ ｉ Ｃｒ ３膜とＴａ。
Ｎ−ＮｉＣｒ併用型の抵抗値変化を示すグラフ、第４図
はＴ ａ ｚ Ｎ薄膜とＮｉＣｒ薄膜のレーザトリミン
グ後の抵抗値変化率を示すグラフ、第５図は全抵抗値に
占めるＮｉＣｒ薄膜の抵抗値のδり合に対する抵抗値変
化率の関係を示すグラフである。
１０・・・アルミナ基板、１２・・・第１の電極バノＬ
′ １４・・・Ｔａｔ Ｎ薄膜の蛇行パターン、１６・
ＮｉＣｒ１膜のトリミングパッド、１８・・・第２の主
権パッド、２０・・・トリミング個所。
第１図
Ｑ
第２図FIG. 1 is a sectional view showing an embodiment of a thin film resistor according to the present invention, and FIG. 2 is a plan view thereof. Also, Figure 3 shows Ta2N
3 film, N i Cr 3 film, and Ta. A graph showing the change in resistance of the N-NiCr combination type. Figure 4 is a graph showing the rate of change in resistance after laser trimming of T az N thin film and NiCr thin film. Figure 5 is a graph showing the percentage of change in resistance of the N-NiCr thin film after laser trimming. 7 is a graph showing the relationship between the resistance value change rate and the resistance value δ ratio. 10... Alumina substrate, 12... First electrode vane L
' 14...Meandering pattern of Tat N thin film, 16.
Trimming pad of NiCr1 film, 18... second sovereign pad, 20... trimming location. Figure 1 Q Figure 2
Claims (2)
蛇行パターンと、ＮｉＣｒ薄膜のトリミングパッドと、
第２の電極パッドとを直列に、それらが一部で互いに重
なり合うように設けたことを特徴とする薄膜抵抗体。1. A first electrode pad, a meandering pattern of Ta_2N thin film, and a trimming pad of NiCr thin film on the substrate;
A thin film resistor comprising a second electrode pad and a second electrode pad arranged in series so that they partially overlap each other.
．２〜１６．２％とした請求項１記載の薄膜抵抗体。2. The ratio of the resistance value of the NiCr thin film to the total resistance value is 2
．． The thin film resistor according to claim 1, wherein the content is 2 to 16.2%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1311418A JPH03173101A (en) | 1989-11-30 | 1989-11-30 | Thin film resistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1311418A JPH03173101A (en) | 1989-11-30 | 1989-11-30 | Thin film resistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03173101A true JPH03173101A (en) | 1991-07-26 |
Family
ID=18016965
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1311418A Pending JPH03173101A (en) | 1989-11-30 | 1989-11-30 | Thin film resistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03173101A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0657898A1 (en) * | 1993-12-10 | 1995-06-14 | Koninklijke Philips Electronics N.V. | Electrical resistor |
| US5953811A (en) * | 1998-01-20 | 1999-09-21 | Emc Technology Llc | Trimming temperature variable resistor |
| US6614342B1 (en) * | 1999-07-09 | 2003-09-02 | Nok Corporation | Strain gauge |
| US7012499B2 (en) * | 2003-06-02 | 2006-03-14 | International Business Machines Corporation | Method of fabrication of thin film resistor with 0 TCR |
| JP2006156911A (en) * | 2004-12-01 | 2006-06-15 | Ricoh Co Ltd | Printed wiring board |
| JP2016086074A (en) * | 2014-10-24 | 2016-05-19 | Koa株式会社 | Resistor and method of manufacturing the same |
-
1989
- 1989-11-30 JP JP1311418A patent/JPH03173101A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0657898A1 (en) * | 1993-12-10 | 1995-06-14 | Koninklijke Philips Electronics N.V. | Electrical resistor |
| BE1007868A3 (en) * | 1993-12-10 | 1995-11-07 | Koninkl Philips Electronics Nv | Electrical resistance. |
| US5953811A (en) * | 1998-01-20 | 1999-09-21 | Emc Technology Llc | Trimming temperature variable resistor |
| US6614342B1 (en) * | 1999-07-09 | 2003-09-02 | Nok Corporation | Strain gauge |
| US7012499B2 (en) * | 2003-06-02 | 2006-03-14 | International Business Machines Corporation | Method of fabrication of thin film resistor with 0 TCR |
| JP2006156911A (en) * | 2004-12-01 | 2006-06-15 | Ricoh Co Ltd | Printed wiring board |
| JP4562504B2 (en) * | 2004-12-01 | 2010-10-13 | 株式会社リコー | Printed wiring board |
| JP2016086074A (en) * | 2014-10-24 | 2016-05-19 | Koa株式会社 | Resistor and method of manufacturing the same |
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