JPH0316786A - Recording medium and recording method - Google Patents
Recording medium and recording methodInfo
- Publication number
- JPH0316786A JPH0316786A JP1154302A JP15430289A JPH0316786A JP H0316786 A JPH0316786 A JP H0316786A JP 1154302 A JP1154302 A JP 1154302A JP 15430289 A JP15430289 A JP 15430289A JP H0316786 A JPH0316786 A JP H0316786A
- Authority
- JP
- Japan
- Prior art keywords
- recording
- crystal
- recording medium
- layer
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 15
- 239000013078 crystal Substances 0.000 claims abstract description 81
- 239000000463 material Substances 0.000 claims abstract description 32
- 238000006243 chemical reaction Methods 0.000 claims abstract description 16
- 239000010409 thin film Substances 0.000 claims description 34
- 230000003287 optical effect Effects 0.000 claims description 6
- 230000001678 irradiating effect Effects 0.000 claims description 4
- 230000008018 melting Effects 0.000 abstract description 11
- 238000002844 melting Methods 0.000 abstract description 11
- 238000001816 cooling Methods 0.000 abstract description 7
- 230000005855 radiation Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 74
- 239000011521 glass Substances 0.000 description 19
- UKMSUNONTOPOIO-UHFFFAOYSA-N docosanoic acid Chemical compound CCCCCCCCCCCCCCCCCCCCCC(O)=O UKMSUNONTOPOIO-UHFFFAOYSA-N 0.000 description 18
- 239000000758 substrate Substances 0.000 description 14
- -1 hydrazides Chemical class 0.000 description 12
- 238000010438 heat treatment Methods 0.000 description 11
- 239000000975 dye Substances 0.000 description 10
- 235000021357 Behenic acid Nutrition 0.000 description 9
- 229940116226 behenic acid Drugs 0.000 description 9
- 150000002148 esters Chemical class 0.000 description 9
- 239000000155 melt Substances 0.000 description 8
- 239000011241 protective layer Substances 0.000 description 8
- 229920001721 polyimide Polymers 0.000 description 7
- 239000004642 Polyimide Substances 0.000 description 6
- 229910052804 chromium Inorganic materials 0.000 description 6
- 239000011651 chromium Substances 0.000 description 6
- 235000014113 dietary fatty acids Nutrition 0.000 description 6
- 239000000194 fatty acid Substances 0.000 description 6
- 229930195729 fatty acid Natural products 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 229920005989 resin Polymers 0.000 description 6
- 239000011347 resin Substances 0.000 description 6
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 5
- 125000000217 alkyl group Chemical group 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 5
- 229920001577 copolymer Polymers 0.000 description 5
- 150000004665 fatty acids Chemical class 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- 150000003839 salts Chemical class 0.000 description 5
- 125000003545 alkoxy group Chemical group 0.000 description 4
- 238000002425 crystallisation Methods 0.000 description 4
- 230000008025 crystallization Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 4
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 4
- 230000002441 reversible effect Effects 0.000 description 4
- 230000035945 sensitivity Effects 0.000 description 4
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- 235000021355 Stearic acid Nutrition 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- 125000003118 aryl group Chemical group 0.000 description 3
- 150000001558 benzoic acid derivatives Chemical class 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- YDLYQMBWCWFRAI-UHFFFAOYSA-N n-Hexatriacontane Natural products CCCCCCCCCCCCCCCCCCCCCCCCCCCCCCCCCCCC YDLYQMBWCWFRAI-UHFFFAOYSA-N 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- QIQXTHQIDYTFRH-UHFFFAOYSA-N octadecanoic acid Chemical compound CCCCCCCCCCCCCCCCCC(O)=O QIQXTHQIDYTFRH-UHFFFAOYSA-N 0.000 description 3
- OQCDKBAXFALNLD-UHFFFAOYSA-N octadecanoic acid Natural products CCCCCCCC(C)CCCCCCCCC(O)=O OQCDKBAXFALNLD-UHFFFAOYSA-N 0.000 description 3
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- 235000021122 unsaturated fatty acids Nutrition 0.000 description 3
- 150000004670 unsaturated fatty acids Chemical class 0.000 description 3
- GAQCVRTXIAGNEM-UHFFFAOYSA-N 4-hexadecoxybenzoic acid Chemical compound CCCCCCCCCCCCCCCCOC1=CC=C(C(O)=O)C=C1 GAQCVRTXIAGNEM-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229930192627 Naphthoquinone Natural products 0.000 description 2
- ZQPPMHVWECSIRJ-UHFFFAOYSA-N Oleic acid Natural products CCCCCCCCC=CCCCCCCCC(O)=O ZQPPMHVWECSIRJ-UHFFFAOYSA-N 0.000 description 2
- 239000004952 Polyamide Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229920002433 Vinyl chloride-vinyl acetate copolymer Polymers 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 125000002252 acyl group Chemical group 0.000 description 2
- 125000004423 acyloxy group Chemical group 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 150000001408 amides Chemical class 0.000 description 2
- 150000003863 ammonium salts Chemical class 0.000 description 2
- 150000008064 anhydrides Chemical class 0.000 description 2
- 229940051881 anilide analgesics and antipyretics Drugs 0.000 description 2
- 150000003931 anilides Chemical class 0.000 description 2
- 239000001000 anthraquinone dye Substances 0.000 description 2
- 125000004432 carbon atom Chemical group C* 0.000 description 2
- 150000004662 dithiols Chemical class 0.000 description 2
- MEYUFRQDILUMEC-UHFFFAOYSA-N docosylbenzene Chemical compound CCCCCCCCCCCCCCCCCCCCCCC1=CC=CC=C1 MEYUFRQDILUMEC-UHFFFAOYSA-N 0.000 description 2
- POULHZVOKOAJMA-UHFFFAOYSA-N dodecanoic acid Chemical compound CCCCCCCCCCCC(O)=O POULHZVOKOAJMA-UHFFFAOYSA-N 0.000 description 2
- QHMGJGNTMQDRQA-UHFFFAOYSA-N dotriacontane Chemical compound CCCCCCCCCCCCCCCCCCCCCCCCCCCCCCCC QHMGJGNTMQDRQA-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- ZQPPMHVWECSIRJ-MDZDMXLPSA-N elaidic acid Chemical compound CCCCCCCC\C=C\CCCCCCCC(O)=O ZQPPMHVWECSIRJ-MDZDMXLPSA-N 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- BJQWYEJQWHSSCJ-UHFFFAOYSA-N heptacosane Chemical compound CCCCCCCCCCCCCCCCCCCCCCCCCCC BJQWYEJQWHSSCJ-UHFFFAOYSA-N 0.000 description 2
- KEMQGTRYUADPNZ-UHFFFAOYSA-N heptadecanoic acid Chemical compound CCCCCCCCCCCCCCCCC(O)=O KEMQGTRYUADPNZ-UHFFFAOYSA-N 0.000 description 2
- HMSWAIKSFDFLKN-UHFFFAOYSA-N hexacosane Chemical compound CCCCCCCCCCCCCCCCCCCCCCCCCC HMSWAIKSFDFLKN-UHFFFAOYSA-N 0.000 description 2
- XMHIUKTWLZUKEX-UHFFFAOYSA-N hexacosanoic acid Chemical compound CCCCCCCCCCCCCCCCCCCCCCCCCC(O)=O XMHIUKTWLZUKEX-UHFFFAOYSA-N 0.000 description 2
- 229940042795 hydrazides for tuberculosis treatment Drugs 0.000 description 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 2
- VKOBVWXKNCXXDE-UHFFFAOYSA-N icosanoic acid Chemical compound CCCCCCCCCCCCCCCCCCCC(O)=O VKOBVWXKNCXXDE-UHFFFAOYSA-N 0.000 description 2
- QXJSBBXBKPUZAA-UHFFFAOYSA-N isooleic acid Natural products CCCCCCCC=CCCCCCCCCC(O)=O QXJSBBXBKPUZAA-UHFFFAOYSA-N 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- LKKPNUDVOYAOBB-UHFFFAOYSA-N naphthalocyanine Chemical compound N1C(N=C2C3=CC4=CC=CC=C4C=C3C(N=C3C4=CC5=CC=CC=C5C=C4C(=N4)N3)=N2)=C(C=C2C(C=CC=C2)=C2)C2=C1N=C1C2=CC3=CC=CC=C3C=C2C4=N1 LKKPNUDVOYAOBB-UHFFFAOYSA-N 0.000 description 2
- 150000002791 naphthoquinones Chemical class 0.000 description 2
- IGGUPRCHHJZPBS-UHFFFAOYSA-N nonacosane Chemical compound CCCCCCCCCCCCCCCCCCCCCCCCCCCCC IGGUPRCHHJZPBS-UHFFFAOYSA-N 0.000 description 2
- ZYURHZPYMFLWSH-UHFFFAOYSA-N octacosane Chemical compound CCCCCCCCCCCCCCCCCCCCCCCCCCCC ZYURHZPYMFLWSH-UHFFFAOYSA-N 0.000 description 2
- UTOPWMOLSKOLTQ-UHFFFAOYSA-N octacosanoic acid Chemical compound CCCCCCCCCCCCCCCCCCCCCCCCCCCC(O)=O UTOPWMOLSKOLTQ-UHFFFAOYSA-N 0.000 description 2
- BVKCQBBZBGYNOP-UHFFFAOYSA-N octatriacontane Chemical compound CCCCCCCCCCCCCCCCCCCCCCCCCCCCCCCCCCCCCC BVKCQBBZBGYNOP-UHFFFAOYSA-N 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- YKNWIILGEFFOPE-UHFFFAOYSA-N pentacosane Chemical compound CCCCCCCCCCCCCCCCCCCCCCCCC YKNWIILGEFFOPE-UHFFFAOYSA-N 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 229920002647 polyamide Polymers 0.000 description 2
- 229920000515 polycarbonate Polymers 0.000 description 2
- 239000004814 polyurethane Substances 0.000 description 2
- 229920000915 polyvinyl chloride Polymers 0.000 description 2
- 239000004800 polyvinyl chloride Substances 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 235000003441 saturated fatty acids Nutrition 0.000 description 2
- 150000004671 saturated fatty acids Chemical class 0.000 description 2
- 229920002050 silicone resin Polymers 0.000 description 2
- RGTIBVZDHOMOKC-UHFFFAOYSA-N stearolic acid Chemical compound CCCCCCCCC#CCCCCCCCC(O)=O RGTIBVZDHOMOKC-UHFFFAOYSA-N 0.000 description 2
- 125000001424 substituent group Chemical group 0.000 description 2
- KUPLEGDPSCCPJI-UHFFFAOYSA-N tetracontane Chemical compound CCCCCCCCCCCCCCCCCCCCCCCCCCCCCCCCCCCCCCCC KUPLEGDPSCCPJI-UHFFFAOYSA-N 0.000 description 2
- POOSGDOYLQNASK-UHFFFAOYSA-N tetracosane Chemical compound CCCCCCCCCCCCCCCCCCCCCCCC POOSGDOYLQNASK-UHFFFAOYSA-N 0.000 description 2
- GWVDBZWVFGFBCN-UHFFFAOYSA-N tetratriacontane Chemical compound CCCCCCCCCCCCCCCCCCCCCCCCCCCCCCCCCC GWVDBZWVFGFBCN-UHFFFAOYSA-N 0.000 description 2
- ANRHNWWPFJCPAZ-UHFFFAOYSA-M thionine Chemical compound [Cl-].C1=CC(N)=CC2=[S+]C3=CC(N)=CC=C3N=C21 ANRHNWWPFJCPAZ-UHFFFAOYSA-M 0.000 description 2
- WMZHDICSCDKPFS-UHFFFAOYSA-N triacont-1-ene Chemical compound CCCCCCCCCCCCCCCCCCCCCCCCCCCCC=C WMZHDICSCDKPFS-UHFFFAOYSA-N 0.000 description 2
- JXTPJDDICSTXJX-UHFFFAOYSA-N triacontane Chemical compound CCCCCCCCCCCCCCCCCCCCCCCCCCCCCC JXTPJDDICSTXJX-UHFFFAOYSA-N 0.000 description 2
- ZDPHROOEEOARMN-UHFFFAOYSA-N undecanoic acid Chemical compound CCCCCCCCCCC(O)=O ZDPHROOEEOARMN-UHFFFAOYSA-N 0.000 description 2
- 229920002554 vinyl polymer Polymers 0.000 description 2
- OYHQOLUKZRVURQ-NTGFUMLPSA-N (9Z,12Z)-9,10,12,13-tetratritiooctadeca-9,12-dienoic acid Chemical compound C(CCCCCCC\C(=C(/C\C(=C(/CCCCC)\[3H])\[3H])\[3H])\[3H])(=O)O OYHQOLUKZRVURQ-NTGFUMLPSA-N 0.000 description 1
- WRIDQFICGBMAFQ-UHFFFAOYSA-N (E)-8-Octadecenoic acid Natural products CCCCCCCCCC=CCCCCCCC(O)=O WRIDQFICGBMAFQ-UHFFFAOYSA-N 0.000 description 1
- WXHAZAOZCQDUFE-UHFFFAOYSA-N 1,18-dibromooctadecane Chemical compound BrCCCCCCCCCCCCCCCCCCBr WXHAZAOZCQDUFE-UHFFFAOYSA-N 0.000 description 1
- AYGKJDVBWSEQHQ-UHFFFAOYSA-N 1,20-dibromoicosane Chemical compound BrCCCCCCCCCCCCCCCCCCCCBr AYGKJDVBWSEQHQ-UHFFFAOYSA-N 0.000 description 1
- SLATUJZSZLORHE-UHFFFAOYSA-N 1,22-dibromodocosane Chemical compound BrCCCCCCCCCCCCCCCCCCCCCCBr SLATUJZSZLORHE-UHFFFAOYSA-N 0.000 description 1
- LQJBNNIYVWPHFW-UHFFFAOYSA-N 20:1omega9c fatty acid Natural products CCCCCCCCCCC=CCCCCCCCC(O)=O LQJBNNIYVWPHFW-UHFFFAOYSA-N 0.000 description 1
- QSBYPNXLFMSGKH-UHFFFAOYSA-N 9-Heptadecensaeure Natural products CCCCCCCC=CCCCCCCCC(O)=O QSBYPNXLFMSGKH-UHFFFAOYSA-N 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- SNRUBQQJIBEYMU-UHFFFAOYSA-N Dodecane Natural products CCCCCCCCCCCC SNRUBQQJIBEYMU-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 239000005639 Lauric acid Substances 0.000 description 1
- 235000021353 Lignoceric acid Nutrition 0.000 description 1
- CQXMAMUUWHYSIY-UHFFFAOYSA-N Lignoceric acid Natural products CCCCCCCCCCCCCCCCCCCCCCCC(=O)OCCC1=CC=C(O)C=C1 CQXMAMUUWHYSIY-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 150000007945 N-acyl ureas Chemical class 0.000 description 1
- 239000005642 Oleic acid Substances 0.000 description 1
- 229920001328 Polyvinylidene chloride Polymers 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 150000001335 aliphatic alkanes Chemical class 0.000 description 1
- 150000001338 aliphatic hydrocarbons Chemical class 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 125000003277 amino group Chemical group 0.000 description 1
- 125000005427 anthranyl group Chemical group 0.000 description 1
- 229940053200 antiepileptics fatty acid derivative Drugs 0.000 description 1
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 1
- 239000000987 azo dye Substances 0.000 description 1
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- 150000001559 benzoic acids Chemical class 0.000 description 1
- 125000006267 biphenyl group Chemical group 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 125000003917 carbamoyl group Chemical group [H]N([H])C(*)=O 0.000 description 1
- 125000001951 carbamoylamino group Chemical class C(N)(=O)N* 0.000 description 1
- 150000001721 carbon Chemical group 0.000 description 1
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- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- 150000001844 chromium Chemical class 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 125000004093 cyano group Chemical group *C#N 0.000 description 1
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- 238000001035 drying Methods 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- BEFDCLMNVWHSGT-UHFFFAOYSA-N ethenylcyclopentane Chemical compound C=CC1CCCC1 BEFDCLMNVWHSGT-UHFFFAOYSA-N 0.000 description 1
- FARYTWBWLZAXNK-WAYWQWQTSA-N ethyl (z)-3-(methylamino)but-2-enoate Chemical compound CCOC(=O)\C=C(\C)NC FARYTWBWLZAXNK-WAYWQWQTSA-N 0.000 description 1
- 125000004494 ethyl ester group Chemical group 0.000 description 1
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- 230000008014 freezing Effects 0.000 description 1
- 238000007710 freezing Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 125000005843 halogen group Chemical group 0.000 description 1
- IKTAPDJXVHLCBS-UHFFFAOYSA-N hexacosylbenzene Chemical compound CCCCCCCCCCCCCCCCCCCCCCCCCCC1=CC=CC=C1 IKTAPDJXVHLCBS-UHFFFAOYSA-N 0.000 description 1
- SIXQKCKYEKKFRC-UHFFFAOYSA-N hexatriacont-1-ene Chemical compound CCCCCCCCCCCCCCCCCCCCCCCCCCCCCCCCCCC=C SIXQKCKYEKKFRC-UHFFFAOYSA-N 0.000 description 1
- 150000002430 hydrocarbons Chemical group 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- YAQXGBBDJYBXKL-UHFFFAOYSA-N iron(2+);1,10-phenanthroline;dicyanide Chemical compound [Fe+2].N#[C-].N#[C-].C1=CN=C2C3=NC=CC=C3C=CC2=C1.C1=CN=C2C3=NC=CC=C3C=CC2=C1 YAQXGBBDJYBXKL-UHFFFAOYSA-N 0.000 description 1
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- WQEPLUUGTLDZJY-UHFFFAOYSA-N n-Pentadecanoic acid Natural products CCCCCCCCCCCCCCC(O)=O WQEPLUUGTLDZJY-UHFFFAOYSA-N 0.000 description 1
- 125000001624 naphthyl group Chemical group 0.000 description 1
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 description 1
- 231100000252 nontoxic Toxicity 0.000 description 1
- 230000003000 nontoxic effect Effects 0.000 description 1
- FWYPRLRRSZYFDC-UHFFFAOYSA-N octacosylbenzene Chemical compound CCCCCCCCCCCCCCCCCCCCCCCCCCCCC1=CC=CC=C1 FWYPRLRRSZYFDC-UHFFFAOYSA-N 0.000 description 1
- PNGITPWPULMPMS-UHFFFAOYSA-N octatriacont-1-ene Chemical compound CCCCCCCCCCCCCCCCCCCCCCCCCCCCCCCCCCCCC=C PNGITPWPULMPMS-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000012188 paraffin wax Substances 0.000 description 1
- 235000019809 paraffin wax Nutrition 0.000 description 1
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- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 1
- 239000001007 phthalocyanine dye Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
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- 229920003023 plastic Polymers 0.000 description 1
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- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
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- 239000005033 polyvinylidene chloride Substances 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 235000010199 sorbic acid Nutrition 0.000 description 1
- 239000004334 sorbic acid Substances 0.000 description 1
- 229940075582 sorbic acid Drugs 0.000 description 1
- 150000005846 sugar alcohols Polymers 0.000 description 1
- 125000000020 sulfo group Chemical group O=S(=O)([*])O[H] 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- ZYLUTTJKFBSYOL-UHFFFAOYSA-N tetracosylbenzene Chemical compound CCCCCCCCCCCCCCCCCCCCCCCCC1=CC=CC=C1 ZYLUTTJKFBSYOL-UHFFFAOYSA-N 0.000 description 1
- TUNFSRHWOTWDNC-HKGQFRNVSA-N tetradecanoic acid Chemical compound CCCCCCCCCCCCC[14C](O)=O TUNFSRHWOTWDNC-HKGQFRNVSA-N 0.000 description 1
- AQUWSCLUQRAMPO-UHFFFAOYSA-N tetratriacont-1-ene Chemical compound CCCCCCCCCCCCCCCCCCCCCCCCCCCCCCCCC=C AQUWSCLUQRAMPO-UHFFFAOYSA-N 0.000 description 1
- PCMNQXYUGWOFKJ-UHFFFAOYSA-N tetratriacontylbenzene Chemical compound CCCCCCCCCCCCCCCCCCCCCCCCCCCCCCCCCCC1=CC=CC=C1 PCMNQXYUGWOFKJ-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- OLTHARGIAFTREU-UHFFFAOYSA-N triacontane Natural products CCCCCCCCCCCCCCCCCCCCC(C)CCCCCCCC OLTHARGIAFTREU-UHFFFAOYSA-N 0.000 description 1
- RNLHVNMGMAMAHJ-UHFFFAOYSA-N triacontylbenzene Chemical compound CCCCCCCCCCCCCCCCCCCCCCCCCCCCCCC1=CC=CC=C1 RNLHVNMGMAMAHJ-UHFFFAOYSA-N 0.000 description 1
- 150000003626 triacylglycerols Chemical class 0.000 description 1
- LOONNDWXOPXLNL-UHFFFAOYSA-N tritriacontylbenzene Chemical compound CCCCCCCCCCCCCCCCCCCCCCCCCCCCCCCCCC1=CC=CC=C1 LOONNDWXOPXLNL-UHFFFAOYSA-N 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Landscapes
- Thermal Transfer Or Thermal Recording In General (AREA)
- Optical Record Carriers And Manufacture Thereof (AREA)
Abstract
Description
〔産業上の分野〕
本発明は,熱の印加または光の照射により情報を記録す
るヒートモード記録媒体および記録方法に関し、詳しく
は,薄膜状結晶を有する記録媒体と、その薄膜状結晶の
部分的な結晶状態の可逆的な変化に基づく記録方法に関
する。
〔従来の技術〕
近年、情報を熱エネルギーの形で印加し,記録材料の形
状変化や物性変化として記録するいわゆるヒートモード
記録システムが実用化されつつある.このようなヒート
モード記録媒体としては、Te, Bi. Ss%Tb
. Inなどを主成分とする金属材料を用いた無機系の
記録媒体、あるいは、シアニンなどのポリメチン系色素
、フタ口シアニン、ナフタロシアニン、ボルフィリンな
どの大環状アザアヌレン系色素、ナフトキノン、アント
ラキノン系色素およびジチオール金属錯体系色素などの
有機色素を用いた記録媒体が知られている.これらの記
録媒体は集光したレーザー光の照射などによリ熱エネル
ギーが加えられると、照射部分の記録層が溶融あるいは
蒸発して孔(ビット)を形成し、情報を記録するもので
ある。しかし、これらの記録媒体は、記録した情報を消
去して,再び新しい情報を記録する可逆性を有していな
い。
上記のような再生専用、追記型のヒートモード光記録媒
体の発達とともに、記録、再生、消去が可能な可逆記録
媒体の必要性が高まっている。
こうした可逆記録媒体として、たとえばGd. Tb、
oyなどの希土類元素とFe. Ni, Coなどの遷
移金属とからなる合金薄膜を用いた光磁気記録媒体があ
る.これは、レーザー光照射による加熱と外部印加磁界
を併用して記録し、磁化の向きによる光の振動面の回転
方向の違いを利用して再生するものである。また、情報
の消去はレーザーによる加熱と記録時とは逆向きの外部
磁界を加えることにより行なわれる.しかし、この光磁
気記録媒体は再生時の感度が十分でな< S/N比が悪
いこと、および酸化などの影響により記録感度の劣化や
記録の安定性に問題があるなどの欠点を有している。
また、可逆記録媒体として、Ge, Te. Se.S
b,In. Snなどの元素を主成分とする無機材料薄
膜からなる記録層の結晶一非品質問の相転移を利用した
ものがある.この記録媒体はレーザー光の照射のみで、
ヒートモードで記録および消去ができる利点があるが、
記録部と非記録部のコントラストや記録の安定性が十分
でないこと、記録層の材料の安定性に関して問題がある
などの欠点を有している.[Industrial Field] The present invention relates to a heat mode recording medium and a recording method for recording information by applying heat or irradiating light. This invention relates to a recording method based on reversible changes in crystalline states. [Prior Art] In recent years, so-called heat mode recording systems have been put into practical use, which apply information in the form of thermal energy and record it as a change in shape or physical properties of a recording material. Such heat mode recording media include Te, Bi. Ss%Tb
.. Inorganic recording media using metal materials mainly composed of In, polymethine dyes such as cyanine, macrocyclic azaannulene dyes such as phthalocyanine, naphthalocyanine, volufiline, naphthoquinone, anthraquinone dyes, and dithiol. Recording media using organic dyes such as metal complex dyes are known. When thermal energy is applied to these recording media, such as by irradiation with a focused laser beam, the recording layer in the irradiated area melts or evaporates, forming holes (bits) and recording information. However, these recording media do not have the reversibility of erasing recorded information and recording new information again. With the development of read-only, write-once type heat mode optical recording media as described above, the need for reversible recording media that can be recorded, read, and erased is increasing. As such a reversible recording medium, for example, Gd. Tb,
Rare earth elements such as oy and Fe. There are magneto-optical recording media that use alloy thin films made of transition metals such as Ni and Co. This uses a combination of heating by laser beam irradiation and an externally applied magnetic field to record, and reproduces data by utilizing the difference in the rotational direction of the light vibration plane depending on the direction of magnetization. Information is also erased by heating with a laser and applying an external magnetic field in the opposite direction to that used during recording. However, this magneto-optical recording medium has drawbacks such as insufficient sensitivity during reproduction, poor S/N ratio, and problems with deterioration of recording sensitivity and recording stability due to effects such as oxidation. ing. Furthermore, as reversible recording media, Ge, Te. Se. S
b, In. There is a method that utilizes the phase transition between crystal and non-crystalline materials in a recording layer made of a thin film of an inorganic material containing an element such as Sn as a main component. This recording medium can only be irradiated with laser light.
It has the advantage of being able to record and erase in heat mode, but
It has drawbacks such as insufficient contrast between the recorded and non-recorded areas, insufficient recording stability, and problems with the stability of the material of the recording layer.
このように、従来の記録媒体を用いた記録媒体および記
録方法は、記録の感度、消去速度、記録の安定性、記録
部と非記録部のコントラストなどに種々の問題を残して
いる.また使用する記録媒体は安全性の面から、毒性の
ない材料を用いたものであることが望ましい.
このような観点から、本発明は情報の記録、再生および
消去が可能な記録媒体を用い、情報を高速かつ高密度に
記録し、長期間安定に保存できる記録媒体および記録方
法を提供するものである.〔課題を解決するための手段
〕
本発明者らは以上のような目的から、種々の材料の熱変
化を検討した結果、結晶或長軸によって成長速度が異な
る薄膜状結晶を記録層に用い、部分的に熱を印加して溶
融し、再結晶化すると,周囲の結晶は異なる方向に結晶
化すること、この部分を適当な温度に再加熱し徐冷する
と、元の状態に戻ることを見出した。本発明の記録媒体
および記録方法は、このような薄膜状結晶の結晶軸方向
の変化に基づくものである.
すなわち、本発明の記録媒体は方向により結晶の成長速
度が異なる材料の薄膜状結晶であるか、これを含む記録
層を用いることを特徴とする記録媒体であり、この記録
層と記録時に照射された光の一部または全部を吸収し熱
に変換する光熱変換層とを併せ持つことを特徴とする記
録媒体である。
また、この記録層が光学的異方性を有する有機薄膜状結
晶であり、方向により結晶の成長速度が異なる材料の薄
膜状結晶である記録媒体である。
また、本発明の記録方法は、上記記@層に熱の印加ある
いは光を照射することにより薄膜状結晶を部分的かつ一
時的に溶融した後、方向により結晶の成長速度が異なる
材料の再結晶化することにより、周囲の結晶の結晶軸と
は方向の異なる結晶として記録することを特徴とする記
録方法である。
本発明の記録媒体の好ましい構成例を第1図〜第5図に
示す。第1図は基板1上に、方向により結晶の成長速度
が異なる材料の薄膜状結晶からなる記録層2を設けた記
録媒体、第2図は基板1上に記録時に照射された光の一
部または全部を吸収し熱に変換する光熱変換層3(必要
に応じ光の一部を反射する層を兼ねる)を設け、その上
に上記記録層2を設けた記録媒体、第3図は基板l上に
記録層2、光熱変換層3を順次積層した記録媒体,第4
図は第2図に示す記録媒体の光熱変換層3と記録層2の
間に、たとえば記録層の薄膜状結晶の均一性の向上など
を目的とする下引き層4を設けた記録媒体、第5図は第
4図の記録媒体の記録層2の上にさらに保護層5を設け
た記録媒体である.
本発明を特徴づける記録層は、薄膜状の結晶からなり、
その結晶が戒長ずる方向によって、その成長速度が異な
っているものである。たとえば第6図に示すように基板
、光熱変換層および記録層よりなる記録媒体で、記録層
の薄膜状結晶の最も成長速度の大きな方向が、全体に一
様な方向(矢印)に向いて状態のものである.したがっ
て、この薄膜状結晶の方位(結晶軸の方向)は,どの部
分でもほぼ同じ状態になっている。このような状態の薄
膜状結晶は、たとえば、2枚の基板間に加熱して材料の
融液をはさみ込み薄膜とし、基板を一方向から冷却して
、結晶化することによって得られる。方向によって結晶
の成長速度が異なる材料では、成長速度の大きな方向を
結晶化方向に優先的に配向することが多い.
本発明の記録方法は,このような記録媒体に対して熱を
印加して薄膜状結晶の一部分を溶融させる。部分的に熱
を印加する方法には,たとえばサーマルヘッドのような
微小な発熱体を接触させてもよいし、小さなスポットに
集光した光を照射して行なってもよい.光照射による場
合には、記録層がその光を吸収して発熱するか、あるい
は別に設けた光熱変換層で発熱させる.薄膜状結晶が光
を吸収しない場合には、記録層中に光熱変換物質を含有
させてもよい.
上記の方法で部分的に熱を印加すると、g録層の薄膜状
結晶中には温度分布が形成される.たとえば、レーザー
光を照射して加熱した場合、照射された部分では、レー
ザー光のスポットそのものの持つ強度分布(ガウス分布
)とスポットの外側への熱伝導により温度分布が形成さ
れる。レーザー光を照射したときの微小なスポット内の
温度分布を測定することは困難であるが、第6図のよう
な構成の記録媒体で、レーザー光の強度分布、波長、各
層による光吸収、熱伝導を考慮し,各層の厚さ、密度、
比熱、熱伝導率、屈折率を後記する表−lに示す値とし
てシュミレーションすると、たとえば波長7BOn+*
.ビーム径5μ鳳φのレーザー光を強度4mVでl00
μsec照射した直後の温度分布は第7図のようになる
.温度分布は記録層の厚さ方向には温度差が小さく,横
方向には、中央が最も高く周辺に行くほど低くなる.こ
のとき薄膜状結晶の融点以上になった部分(中央部)は
溶融状態になる。レーザー光の照射を止めると熱が拡散
し、スポット内部では全体に温度が低下していく.融点
以上の温度になり溶融状態になっていた部分は、周辺部
分から凝固点以下になっていくため,溶融部分の範囲が
小さくなっていく、つまりスポットの周辺部から結晶化
が起る。レーザー光のスポットを走査したときは,ライ
ン状に溶融し、そのラインの外側から結晶化していく.
このような加熱方法をとると,温度の低下が速いため、
結晶化は数μsoC程度の時間で完結する。このように
高速に結晶化すると、成長速度の最も大きな方向を結晶
の成長方向、すなわち、照射部分の外側から中央に向か
って優先的に配向させて結晶化し、結果的にこの部分の
結晶の方向が周囲の結晶とは異なった方向になり記録さ
れる.この様子は、たとえば第8図のような状態である
.
このような薄膜状結晶への部分的な短時間の熱の印加に
よって形成された結晶軸の方向の異なる記録部は,光学
的な手段により検出できる。特に、薄膜状結晶が光学的
な異方性を有する結晶であれば,記録部は偏光顕微鏡に
より明瞭なコントラストで観察できるし、偏光を用いれ
ば記録された情報を容易に読み出し再生することができ
る.再生は、具体的には,記録媒体に集光した偏光(レ
ーザー光)を入射させ,その反射または透過光を入射さ
せた光の振動方向と直交する振動方向の光を透過するよ
うに置かれた偏光子を通して、光の強度を検知すること
により行なうことができる.再生に用いる光の強度は記
録および消去に用いる光に比べ十分に弱めて,記録層の
温度が記録温度および消去温度まで上らない程度とする
。
このように結晶軸方向の変化として記録された部分は、
記録とは異なる条件で加熱、冷却することにより消去す
ることもできる。たとえば、結晶状薄膜の記録部分を含
む範囲を加熱溶融させた後、記録時のような急冷ではな
く、徐冷すると溶融した部分の外側の結晶と同様な方向
に結晶化し、結果的に記録は消去される。また、薄膜状
結晶の材料の種類によっては、溶融する温度より低い温
度に加熱することによって消去できる場合もある。
この温度は、記録層が完全には溶融しない温度であるが
、分子が十分に熱運動し得る程度の温度である。消去温
度範囲は、記録層の材料、純度などにより変化する。記
録が消去される様子は,偏光顕微鏡でa察しながら、記
録媒体の温度を上げていくことにより確認できる。
本発明の記録媒体の記録層に用いる材料としては、成長
速度が異なる結晶成長軸を有する薄膜状結晶を形或でき
る材料であればいずれのものを用いることができる。前
述のように結晶軸方向の変化として記録された部分を偏
光特性の差によって検出する場合には、この薄膜状結晶
が光学的な異方性を持つことが好ましい。このような材
料の具体例としては、たとえば有機材料では、脂肪酸ま
たは脂肪酸誘導体、安息香酸誘導体あるいは融点が50
℃以上のn−アルカンなどがあげられるが、これらに限
定されるものではない.
本発明でいう脂肪酸または脂肪酸誘導体とは、詳しくは
飽和または不飽和のモノまたはジカルボン酸またはこれ
らのエステル、アミド、アニリド、ヒドラジド、ウレイ
ド、無水物、あるいはアンモニウム塩または金属塩のよ
うな脂肪酸塩は意味する.この場合、エステルは2個以
上のヒドロキシ基を持つ化合物とのエステル、たとえば
モノ、ジまたはトリグリセリドなどを含む。また,これ
らのものはハロゲン、ヒドロキシ基,アシル基、アシル
オキシ基、あるいは置換または無置換のアリール基によ
り置換されていてもよい。これらの飽和または不飽和脂
肪酸は直鎖のものでも枝分れしたものでもよく、不飽和
脂肪酸は二重結合または三重結合を1個持つものでも、
2個以上持つものでもよい.これらの脂肪酸中の炭化水
素鎖の炭素数は10以上であることが好ましい.
飽和脂肪酸の具体例としては、たとえば、ウンデカン酸
、ラウリン酸、ミリスチン酸、ペンタデカン酸、バルミ
チン酸、ヘプタデカン酸,ステアリン酸、ナノデカン酸
、アラキン酸,ベヘン酸、リグノセリン酸、セロチン酸
、モンタン酸、メリシン酸などがあり,不飽和脂肪酸と
しては、たとえば、オレイン酸、エライジン酸、リノー
ル酸,ソルビン酸、ステアロール酸などがある.またエ
ステルの具体例としては、たとえば、これらの脂肪酸の
メチルエステル、エチルエステル、ヘキシルエステル、
オクチルエステル,デシルエステル、ドデシルエステル
、テトラデシルエステル、ステアリルエステル、エイコ
シルエステル、ドコシルエステルなどがある。また、金
属塩の例としては、たとえば、これらの脂肪酸のナトリ
ウム、カリウム、マグネシウム、カルシウム、ニッケル
、コバルト、亜鉛、カドミウム、アルミニウムなどの金
属塩である.
また、本発明でいう安息香酸誘導体には、詳しくは、下
記一般式(!)〜(IV)で表わされる安息香酸および
そのエステル、アミド、アニリドなどが含まれる.また
、この他に置換されていてもよいヒドラジド、ウレイド
あるいは無水物、金属塩、アンモニウム塩などの塩類が
含まれる.また、エステルは一般式(n)で表わされる
化合物以外に、脂肪族炭化水素化合物の多価アルコール
あるいは、複数のヒドロキシ基を持つ芳香族炭化水素と
のエステルを含む。
It.
一般式中のR,、R2、R,、およびその他の安息香酸
誘導体の置換基としては、たとえば水素、アルキル基、
アルコキシ基,フェニル基、ビフェニル基、ナフチル基
、アントラニル基などのアリール基であり、Rユはこれ
らの他、アシル基、アシルオキシ基、ハロゲン、ニトロ
基、ヒドロキシ基,シアノ基,カルボキシル基およびそ
のエステル、置換されていてもよいカルバモイル基、ス
ルホ基およびそのエステルあるいはアルキル基、フェニ
ル基、置換フェニル基で置換されていてもよいアミノ基
などがある。また,上記のアルキル基、アルコキシ基、
アリール基は、Rよと同様の置換基で置換されていても
よい。また,アルキル基、アルコキシ基は,直鎖状のも
のでも技分れしたものでもよく,炭素数2個以上のもの
にあっては炭素鎖中に、1個以上の不飽和結合を含んで
いてもよい.また、本発明でいうn−アルカンの誘導体
とは、炭素鎖中に1個または複数個の二重結合または三
重結合を含む化合物、水素原子が1個以上ハロゲン原子
で置換された化合物,および末端の炭素原子にアルキル
基、アルコキシ基で置換されていてもよいベンゼン環が
結合した化合物である。具体的には、たとえば、テトラ
コサン、ペンタコサン,ヘキサコサン,ヘプタコサン、
オクタコサン、ノナコサン、トリアコンタン、ドトリア
コンタン,テトラトリアコンタン、ヘキサトリアコンタ
ン、オクタトリアコンタン、テトラコンタンなどのn−
アルカンまたはこれらを主成分とする混合物、いわゆる
パラフィン、パラフィンろうがある.また誘導体として
は、l−へキサコセン、l−へプタコセン、1−オクタ
コセン,1−トリアコンテン、1−テトラトリアコンテ
ン、1−ヘキサトリアコンテン.1−オクタトリアコン
テン,l−テトラコンテン,ドコシルベンゼン、テトラ
コシルベンゼン,ヘキサコシルベンゼン、オクタコシル
ベンゼン、トリアコンチルベンゼン、トリトリアコンチ
ルベンゼン、テトラトリアコンチルベンゼン、ヘキサト
リアコンチルベンゼン、l,18−ジブロムオクタデカ
ン、1,20−ジブロムエイコサン、1,22−ジブロ
ムドコサンなどがある.
使用する記録層の材料は、好ましくは融点が50〜20
0℃、特に60〜l50℃の範囲のものが好ましい。
これより低いと記録の保存性に問題があり、また高いと
記録に要するエネルギーが大きくなり記録速度がおそく
なる.
本発明の記録媒体の記録層には、これらの材料のl種ま
たは2種以上を混合して用いることができる.また本発
明における記録層は、これらの材料を主成分とする薄膜
状結晶を含むものであるが、これ以外に層を形成する上
で必要に応じ樹脂を用いることができる.樹脂としては
、たとえば,ポリ塩化ビニル,塩化ビニルー酢酸ビニル
共重合体、塩化ビニルー酢酸ビニルービニルアルコール
共重合体、塩化ビニルー酢酸ビニルーマレイン酸共重合
体、塩化ビニルーアクリレート共重合体、ポリ塩化ビニ
リデン、塩化ビニリデンーアクリロニトリル共重合体、
ポリエステル,ポリアミド,ポリアクリレート、ポリメ
タクリレート,ポリカーボネート,ポリウレタン、シリ
コン樹脂などが挙げられる.記録層中に樹脂を用いる場
合、記録層全体で前記記録層材料1に対して、樹脂は重
量比で3以下、特に1以下であることが好ましい.
本発明の記録媒体の基板としては、たとえばガラス板,
金属板またはポリメチルメタクリレート,ポリカーボネ
ートなどのプラスチック板を用いることができる。また
光熱変換層を設けて、光照射により記録を行なう場合、
光熱変換層には、たとえば白金、チタン、シリコン,ク
ロム、ニッケル、ゲルマニウム、アルミニウムなどの金
属または半金属の層を設ければよい。また、これら以外
に照射した光を吸収する色素、たとえばアゾ系色素、シ
アニン系色素,ナフトキノン系色素、アントラキノン系
色素、フタロシアニン系色素、ナフタロシアニン系色素
、スクアリリウム系色素、ジチオール錯体系色素、アズ
レニウム系色素などの層であってもよい.また、光熱変
換層ではなくこれらの光熱変換物質を直接記録層中に含
有させてもよい.また、記録感度の向上などのため、両
者を併用してもよい.
下引き層4には、たとえばポリ塩化ビニル、塩化ビニル
ー酢酸ビニル共重合体、塩化ビニルーアクリレート共重
合体、ポリ塩化ビニリデン、ポリエステル,ボリアミド
、ポリイミド、ポリカーボネート,ポリエステル、ポリ
ウレタン、アクリル樹脂、シリコン樹脂などを用いるこ
とができる。また保護層5には、これらの樹脂を用いる
か、ガラス板を用いてもよい.ガラス板を用いる場合は
、下引き層と同様の目的で、これらの樹脂層設けたもの
であってもよいし,ガラスの表面の性質を改良する表面
改質材たとえばシラン系、チタネート系表面処理剤で処
理したものであってもよい.〔発明の効果〕
本発明に記録媒体および記録方法は、記録層に穴をあけ
たり、記録層の表面形状を変化させたりするものではな
く、薄膜状結晶の結晶状態を変化させるだけであるため
,記録層の到達温度、冷却温度を適当にコントロールす
ることにより、容易に記録と消去が行なえるものである
.記録は偏光特性の差として検出できるため、記録部と
非記録部のコントラストが高く、高速に信頼性の高い再
生が行なえる.また、記録部も非記録部と同様安定な結
晶状態にあるため、記録された情報は長期間にわたり保
存することができる.
〔実施例〕
以下、実施例により本発明をさらに詳細に説明する.
実施例1
光学研磨されたガラス板上に光反射層であり、かつ光熱
変換層であるクロム層を真空蒸着により設けた。厚さは
約900入であった.一方,保護層となるガラス板(厚
さ0.1+mm)の片面にギャップ材として直径約1μ
鳳のシリカ粒子を微量付着させた。
この両者を100℃の恒温槽中に入れ加熱した後、同温
度でガラス基板のクロム層上にベヘン酸(シグマ社製:
純度99%以上)を少量のせて溶融させた。
次に保護層のガラス板をギャップ材の付着した面を下に
して、ベヘン酸の融液上に一端から静かにかぶせ、融液
を全面に拡げてはさみ込んだ.さらにガラス板の上から
均一に荷重をかけ,基板の一端から冷却し、べヘン酸を
ゆっくり一方向から結晶化させて、薄膜状の結晶とした
.以上の操作によりクロム層上に、ほぼ一様な配向をし
たべヘン酸の結晶薄膜からなる記録層(厚さ0.8μm
)とその上に厚さ約0.1a+mのガラスよりなる保護
層が形成された。
ここで、記録層のべヘン酸結晶の状態を調べるため、同
様にして作威した記録媒体の保護層のガラス板をはく離
し、X線回折を測定した.その結果は、第9図に示すよ
うにべヘン酸C型結晶の長面間隔(48.3人)に基づ
く回折線のみしか現われず、この結晶薄膜がa軸、b軸
を基板に対してほぼ平行にし、C軸が立ち上った状態に
配向していることを示している.
上記のようにして作或した記録媒体に、直径5μmに集
光した波長780nmの半導体レーザー光を強度が記録
媒体面で10+mVになるように連続点灯し、直線状に
照射した。このとき走査速度は100mm/seCとし
た.この記録媒体を反射偏光顕微鏡を用いクロスニコル
で観察すると、明るい非記録部の中に暗いライン状の記
録部が見えた.また、この状態から記録媒体を45゜回
転すると明暗が逆転し、暗い非記録部に明いライン状の
記録部がm察された。
これは記録部の結晶方位が周囲の非記録部の結晶の方位
と異なっていることを示している.次に,偏光顕微鏡で
記録をIl!察しながら記録媒体の温度を2℃l分の速
度で上昇させていくと,60℃位から記録が消え始め、
75℃では完全に消え、この温度から冷却することによ
り記録が消去できることがわたった。なお、非記録部の
べヘン酸結晶は約79℃から溶融することより,この記
録が薄膜状結晶そのものの融点より低い温度で消去され
ることが確認された.
実施例2
記録層の材料としてベヘン酸の代わりにステアリン酸(
シグマ社製:純度99%以上)を用いた以外は実施例l
と同様にして、クロム層上に、ほぼ一様な配向をしたス
テアリン酸の薄膜状結晶からなる記録層(厚さ約0.8
μm)とその上に厚さ約0.l鳳一のガラスよりなる保
護層を有する記録媒体を作成した.
この記録媒体に実施例1と同様にレーザー光を走査した
。ただし、照射強度は記録媒体面で8mWとした6照射
後,偏光顕微鏡でamすると実施例lのベヘン酸の場合
と同様の記録が認確できた.また、偏光顕微鏡でtR祭
し・ながら記録媒体の温度を2℃/分の速度で上昇させ
ていくと、67℃で記録が完全に消え,この温度から冷
却することにより記録が消去できることがわかった.な
お非記録部のステアリン酸結晶は約69℃から溶融する
ことより、この記録が薄膜状結晶そのものの融点より低
い温度で消去されることが確認された.実施例3
実施例1と同様にクロムを真空蒸着したガラス基板を用
意した.このクロム層上にポリイミド樹脂溶液(日本合
威ゴム社製:JIB−1)を塗布し、温度150℃で1
時間乾燥して、厚さ約0.1μmのポリイミド層を設け
た.一方、保護層となる厚さ約0,lamのガラス板を
用意し、その片面に同様に厚さ約0.1μnのポリイミ
ド層を設け,さらにその上にギャップ材として直径約1
μ麿のシリカ粒子を微量付着させた.この両方を温度1
40℃の恒温槽中に入れ加熱した後,同温度でガラス基
板上のポリイミド層上に4−ヘキサデシルオキシ安息香
酸を少量のせ溶融させた.次に、一方のガラス板をギャ
ップ材の付着した面を下にして、その融液上に一端から
静かにかぶせ、融液を全体に拡げてはさみ込んだ.さら
にかぶせたガラス板の上から均一に荷重をかけ、基板の
一端から冷却し、一方向からゆっくり結晶化させた。以
上の操作によりクロム層、ポリイミド層、ほぼ一様な配
向をした4−ヘキサデシルオキシ安息香酸の結晶薄膜よ
りなる記録層(厚さ約0.8μm)、ポリイミド層及び
ガラスがその順に基板に積層された記.録媒体を得た.
この記録媒体に実施例1と同様にレーザー光を走査した
.ただし、照射強度を記録媒体面で12IllI1とし
た.照射後、偏光顕微鏡で観察すると実施例1と同様の
記録が確認できた。また、偏光顕微鏡で観察しながら記
録媒体の温度を2℃/分の速度で上昇させていくと、8
0℃で記録が完全に消え、この温度から冷却することに
より記録が消去できることがわかった.なお非記録部の
結晶薄膜は約it5℃より溶融することから、この記録
が、薄膜状結晶そのものの融点より低い温度で消去され
ることが確認された。
表−1As described above, recording media and recording methods using conventional recording media have various problems such as recording sensitivity, erasing speed, recording stability, and contrast between recorded and non-recorded areas. In addition, from the standpoint of safety, it is desirable that the recording medium used be made of non-toxic materials. From this viewpoint, the present invention provides a recording medium and a recording method that can record information at high speed and high density using a recording medium that is capable of recording, reproducing, and erasing information, and that can store the information stably for a long period of time. be. [Means for Solving the Problems] For the above-mentioned purposes, the present inventors studied the thermal changes of various materials, and found that a thin film-like crystal whose growth rate varies depending on the long axis of the crystal is used in the recording layer, We discovered that when heat is applied to a part of the material to melt it and recrystallize it, the surrounding crystals crystallize in different directions, and that when this part is reheated to an appropriate temperature and slowly cooled, it returns to its original state. Ta. The recording medium and recording method of the present invention are based on changes in the crystal axis direction of such thin film crystals. That is, the recording medium of the present invention is a recording medium characterized by using a recording layer that is or includes a thin film-like crystal of a material whose crystal growth rate differs depending on the direction, and that the recording layer and the recording layer that are irradiated during recording are The recording medium is characterized in that it also includes a light-to-heat conversion layer that absorbs some or all of the light and converts it into heat. Further, this recording medium is a recording medium in which the recording layer is an organic thin film crystal having optical anisotropy, and is a thin film crystal of a material whose crystal growth rate differs depending on the direction. In addition, the recording method of the present invention involves partially and temporarily melting the thin film crystal by applying heat or irradiating the above-mentioned layer with light, and then recrystallizing the material whose crystal growth rate differs depending on the direction. This is a recording method characterized by recording as a crystal whose direction is different from that of the crystal axes of surrounding crystals. Preferred structural examples of the recording medium of the present invention are shown in FIGS. 1 to 5. Figure 1 shows a recording medium in which a recording layer 2 made of a thin film crystal of a material whose crystal growth rate varies depending on the direction is provided on a substrate 1, and Figure 2 shows a portion of light irradiated onto the substrate 1 during recording. Alternatively, a recording medium is provided with a photothermal conversion layer 3 that absorbs all of the light and converts it into heat (which also serves as a layer that reflects part of the light if necessary), and the recording layer 2 is provided thereon, as shown in FIG. A recording medium on which a recording layer 2 and a light-to-heat conversion layer 3 are sequentially laminated, a fourth
The figure shows a recording medium in which an undercoat layer 4 is provided between the light-to-heat conversion layer 3 and the recording layer 2 of the recording medium shown in FIG. FIG. 5 shows a recording medium in which a protective layer 5 is further provided on the recording layer 2 of the recording medium shown in FIG. The recording layer that characterizes the present invention is made of thin film-like crystals,
The growth rate differs depending on the direction in which the crystal grows. For example, as shown in Figure 6, in a recording medium consisting of a substrate, a light-to-heat conversion layer, and a recording layer, the direction in which the growth rate of the thin film crystals in the recording layer is the highest is oriented uniformly throughout (arrow). belongs to. Therefore, the orientation (direction of the crystal axis) of this thin film crystal is almost the same everywhere. A thin film crystal in such a state can be obtained, for example, by heating a melt of the material between two substrates to form a thin film, cooling the substrates from one direction, and crystallizing the material. In materials where the crystal growth rate differs depending on the direction, the crystallization direction is often preferentially oriented in the direction with the highest growth rate. The recording method of the present invention applies heat to such a recording medium to melt a portion of the thin film crystal. To apply heat locally, for example, a minute heating element such as a thermal head may be brought into contact, or a small spot may be irradiated with focused light. In the case of light irradiation, the recording layer absorbs the light and generates heat, or a separately provided photothermal conversion layer generates heat. If the thin film crystal does not absorb light, a photothermal conversion substance may be included in the recording layer. When heat is applied locally using the above method, a temperature distribution is formed in the thin film-like crystals of the recording layer. For example, when heating is performed by irradiating a laser beam, a temperature distribution is formed in the irradiated area due to the intensity distribution (Gaussian distribution) of the laser beam spot itself and heat conduction to the outside of the spot. Although it is difficult to measure the temperature distribution within a minute spot when laser light is irradiated, a recording medium with the configuration shown in Figure 6 can measure the intensity distribution of the laser light, wavelength, light absorption by each layer, and heat. Considering conduction, the thickness, density,
If the specific heat, thermal conductivity, and refractive index are simulated as the values shown in Table 1 below, for example, the wavelength is 7BOn+*
.. Laser light with a beam diameter of 5 μιφ and an intensity of 4 mV l00
The temperature distribution immediately after μsec irradiation is shown in Figure 7. The temperature distribution has a small temperature difference in the thickness direction of the recording layer, and in the lateral direction, the temperature is highest at the center and decreases toward the periphery. At this time, the part (center part) whose temperature exceeds the melting point of the thin film crystal becomes molten. When the laser beam irradiation is stopped, the heat diffuses and the temperature inside the spot decreases overall. The temperature of the part that was in a molten state at a temperature higher than the melting point becomes lower than the freezing point from the peripheral part, so the range of the molten part becomes smaller, that is, crystallization occurs from the peripheral part of the spot. When the laser beam spot is scanned, it melts in a line and crystallizes from the outside of the line.
When using this heating method, the temperature decreases quickly, so
Crystallization is completed in about several μsoC. When crystallizing at high speed in this way, crystallization preferentially orients the direction of the highest growth rate to be the crystal growth direction, that is, from the outside to the center of the irradiated area, and as a result, the direction of the crystal in this area changes. is recorded in a direction different from that of the surrounding crystals. This situation is, for example, as shown in Figure 8. Recorded portions with different directions of crystal axes, which are formed by partially applying heat to a thin film crystal for a short time, can be detected by optical means. In particular, if the thin film crystal has optical anisotropy, the recorded portion can be observed with clear contrast using a polarized light microscope, and the recorded information can be easily read and reproduced using polarized light. .. Specifically, in reproduction, focused polarized light (laser light) is incident on a recording medium, and the recording medium is placed so that the reflected or transmitted light is transmitted in a direction of vibration perpendicular to the direction of vibration of the incident light. This can be done by detecting the intensity of light through a polarizer. The intensity of the light used for reproduction is sufficiently weaker than the light used for recording and erasing, so that the temperature of the recording layer does not rise to the recording temperature and erasing temperature. The part recorded as a change in the crystal axis direction in this way is
It can also be erased by heating and cooling under conditions different from those used for recording. For example, after heating and melting the area that includes the recording part of a crystalline thin film, if you cool it slowly instead of rapidly as you would during recording, it will crystallize in the same direction as the crystals outside the melted part, and as a result, the recording will not be possible. will be deleted. Furthermore, depending on the type of material of the thin film crystal, it may be possible to erase it by heating it to a temperature lower than the melting temperature. This temperature is a temperature at which the recording layer does not completely melt, but is at a temperature that allows sufficient thermal movement of molecules. The erasing temperature range varies depending on the material and purity of the recording layer. The erasure of records can be confirmed by increasing the temperature of the recording medium while observing it with a polarizing microscope. As the material used for the recording layer of the recording medium of the present invention, any material can be used as long as it can form a thin film crystal having crystal growth axes with different growth rates. When detecting a portion recorded as a change in the crystal axis direction by a difference in polarization characteristics as described above, it is preferable that this thin film crystal has optical anisotropy. Specific examples of such materials include, for example, organic materials such as fatty acids or fatty acid derivatives, benzoic acid derivatives, or organic materials with a melting point of 50
Examples include, but are not limited to, n-alkanes with a temperature of ℃ or higher. The fatty acid or fatty acid derivative as used in the present invention specifically refers to saturated or unsaturated mono- or dicarboxylic acids, their esters, amides, anilides, hydrazides, ureides, anhydrides, or fatty acid salts such as ammonium salts or metal salts. means. In this case, esters include esters with compounds having two or more hydroxy groups, such as mono-, di- or triglycerides. Further, these may be substituted with a halogen, a hydroxy group, an acyl group, an acyloxy group, or a substituted or unsubstituted aryl group. These saturated or unsaturated fatty acids may be straight-chain or branched, and unsaturated fatty acids may have one double or triple bond,
It is also possible to have two or more. The number of carbon atoms in the hydrocarbon chain in these fatty acids is preferably 10 or more. Specific examples of saturated fatty acids include undecanoic acid, lauric acid, myristic acid, pentadecanoic acid, balmitic acid, heptadecanoic acid, stearic acid, nanodecanoic acid, arachidic acid, behenic acid, lignoceric acid, cerotic acid, montanic acid, and melisic acid. Examples of unsaturated fatty acids include oleic acid, elaidic acid, linoleic acid, sorbic acid, and stearolic acid. Specific examples of esters include methyl ester, ethyl ester, hexyl ester,
These include octyl ester, decyl ester, dodecyl ester, tetradecyl ester, stearyl ester, eicosyl ester, and docosyl ester. Further, examples of metal salts include metal salts of these fatty acids such as sodium, potassium, magnesium, calcium, nickel, cobalt, zinc, cadmium, and aluminum. Further, the benzoic acid derivatives referred to in the present invention specifically include benzoic acids represented by the following general formulas (!) to (IV), and their esters, amides, anilides, and the like. In addition, salts such as optionally substituted hydrazides, ureidos, anhydrides, metal salts, and ammonium salts are included. In addition to the compound represented by the general formula (n), esters include esters of aliphatic hydrocarbon compounds with polyhydric alcohols or aromatic hydrocarbons having a plurality of hydroxy groups. It. Examples of substituents for R, R2, R, and other benzoic acid derivatives in the general formula include hydrogen, alkyl groups,
It is an aryl group such as an alkoxy group, a phenyl group, a biphenyl group, a naphthyl group, an anthranyl group, and in addition to these, R is an acyl group, an acyloxy group, a halogen, a nitro group, a hydroxy group, a cyano group, a carboxyl group, and their esters. , a carbamoyl group that may be substituted, a sulfo group and its ester or alkyl group, a phenyl group, and an amino group that may be substituted with a substituted phenyl group. In addition, the above alkyl group, alkoxy group,
The aryl group may be substituted with the same substituents as R. In addition, alkyl groups and alkoxy groups may be linear or specialized, and those with two or more carbon atoms may contain one or more unsaturated bonds in the carbon chain. Good too. Furthermore, the n-alkane derivatives referred to in the present invention include compounds containing one or more double bonds or triple bonds in the carbon chain, compounds in which one or more hydrogen atoms are substituted with halogen atoms, and terminal It is a compound in which a benzene ring which may be substituted with an alkyl group or an alkoxy group is bonded to the carbon atom. Specifically, for example, tetracosane, pentacosane, hexacosane, heptacosane,
n- such as octacosane, nonacosane, triacontane, dotriacontane, tetratriacontane, hexatriacontane, octatriacontane, tetracontane, etc.
There are alkanes and mixtures containing these as main components, so-called paraffins and paraffin waxes. Examples of derivatives include l-hexacosene, l-heptacocene, 1-octacocene, 1-triacontene, 1-tetratriacontene, 1-hexatriacontene. 1-octatriacontene, l-tetracontene, docosylbenzene, tetracosylbenzene, hexacosylbenzene, octacosylbenzene, triacontylbenzene, tritriacontylbenzene, tetratriacontylbenzene, hexatriacontyl Examples include benzene, 1,18-dibromooctadecane, 1,20-dibromoeicosane, and 1,22-dibromodocosane. The recording layer material used preferably has a melting point of 50 to 20
0°C, particularly preferably in the range of 60 to 150°C. If it is lower than this, there will be problems with recording preservation, and if it is higher, the energy required for recording will increase and the recording speed will be slow. In the recording layer of the recording medium of the present invention, one type or a mixture of two or more of these materials can be used. Further, the recording layer in the present invention contains thin film-like crystals mainly composed of these materials, but resins other than these may be used as necessary to form the layer. Examples of the resin include polyvinyl chloride, vinyl chloride-vinyl acetate copolymer, vinyl chloride-vinyl acetate-vinyl alcohol copolymer, vinyl chloride-vinyl acetate-maleic acid copolymer, vinyl chloride-acrylate copolymer, polychloride vinylidene, vinylidene chloride-acrylonitrile copolymer,
Examples include polyester, polyamide, polyacrylate, polymethacrylate, polycarbonate, polyurethane, and silicone resin. When a resin is used in the recording layer, the weight ratio of the resin to the recording layer material 1 in the entire recording layer is preferably 3 or less, particularly 1 or less. As the substrate of the recording medium of the present invention, for example, a glass plate,
A metal plate or a plastic plate such as polymethyl methacrylate or polycarbonate can be used. In addition, when a photothermal conversion layer is provided and recording is performed by light irradiation,
The photothermal conversion layer may be provided with a layer of metal or metalloid, such as platinum, titanium, silicon, chromium, nickel, germanium, or aluminum. In addition, dyes that absorb the irradiated light, such as azo dyes, cyanine dyes, naphthoquinone dyes, anthraquinone dyes, phthalocyanine dyes, naphthalocyanine dyes, squarylium dyes, dithiol complex dyes, and azulenium dyes, are also available. It may also be a layer of pigment, etc. Furthermore, these photothermal conversion substances may be directly contained in the recording layer instead of in the photothermal conversion layer. Additionally, both may be used in combination to improve recording sensitivity. The undercoat layer 4 includes, for example, polyvinyl chloride, vinyl chloride-vinyl acetate copolymer, vinyl chloride-acrylate copolymer, polyvinylidene chloride, polyester, polyamide, polyimide, polycarbonate, polyester, polyurethane, acrylic resin, silicone resin, etc. can be used. Further, for the protective layer 5, these resins or a glass plate may be used. When using a glass plate, these resin layers may be provided for the same purpose as the undercoat layer, or a surface modification material such as silane-based or titanate-based surface treatment may be used to improve the properties of the glass surface. It may be treated with a chemical. [Effects of the Invention] The recording medium and recording method of the present invention do not make holes in the recording layer or change the surface shape of the recording layer, but only change the crystal state of the thin film crystal. By appropriately controlling the temperature reached and the cooling temperature of the recording layer, recording and erasing can be easily performed. Since recording can be detected as a difference in polarization characteristics, the contrast between recorded and non-recorded areas is high, allowing for high-speed and reliable reproduction. In addition, since the recording part is in a stable crystalline state like the non-recording part, recorded information can be stored for a long period of time. [Example] The present invention will now be explained in more detail with reference to Examples. Example 1 A chromium layer serving as a light reflection layer and a light-to-heat conversion layer was provided on an optically polished glass plate by vacuum deposition. The thickness was approximately 900 pieces. On the other hand, on one side of the glass plate (thickness 0.1+mm) that will serve as the protective layer, a gap material of about 1 μm in diameter is used as a gap material.
A small amount of Otori's silica particles were attached. After heating both of them in a constant temperature bath at 100°C, apply behenic acid (manufactured by Sigma) on the chromium layer of the glass substrate at the same temperature.
(purity of 99% or higher) was placed on top and melted. Next, the protective glass plate was gently placed over the behenic acid melt from one end with the side with the gap material facing down, and the melt was spread over the entire surface and sandwiched. Furthermore, a load was applied uniformly from above the glass plate, and the substrate was cooled from one end to slowly crystallize behenic acid from one direction, forming a thin film of crystals. Through the above operations, a recording layer (0.8 μm thick
) and a protective layer made of glass having a thickness of about 0.1 a+m was formed thereon. Here, in order to investigate the state of behenic acid crystals in the recording layer, the glass plate of the protective layer of a similarly prepared recording medium was peeled off and X-ray diffraction was measured. As shown in Fig. 9, only the diffraction lines based on the long-plane spacing (48.3 persons) of the behenic acid C-type crystals appeared, and this crystal thin film showed that the a-axis and b-axis were aligned with respect to the substrate. It shows that they are oriented almost parallel, with the C axis rising. The recording medium produced as described above was irradiated in a straight line with a semiconductor laser beam having a wavelength of 780 nm and condensed to a diameter of 5 μm, which was continuously turned on so that the intensity was 10+mV at the surface of the recording medium. At this time, the scanning speed was 100 mm/sec. When this recording medium was observed under crossed nicols using a reflective polarizing microscope, dark line-shaped recorded areas were visible within the bright non-recorded areas. Further, when the recording medium was rotated by 45 degrees from this state, the brightness and darkness were reversed, and a bright line-shaped recorded portion was observed in the dark non-recorded portion. This indicates that the crystal orientation of the recording area is different from the crystal orientation of the surrounding non-recording area. Next, record using a polarizing microscope. As I raised the temperature of the recording medium at a rate of 2 degrees Celsius, the records began to disappear at around 60 degrees Celsius.
At 75°C, it disappears completely, and it has been found that the record can be erased by cooling from this temperature. Furthermore, since the behenic acid crystals in the non-recording area melt at about 79°C, it was confirmed that this record was erased at a temperature lower than the melting point of the thin film crystal itself. Example 2 Stearic acid (
Example 1 except that Sigma (purity: 99% or higher) was used.
Similarly, a recording layer (with a thickness of about 0.8
μm) and a thickness of approx. A recording medium with a protective layer made of Hōichi glass was created. This recording medium was scanned with a laser beam in the same manner as in Example 1. However, the irradiation intensity was 8 mW on the surface of the recording medium, and after 6 irradiations, the same recording as in the case of behenic acid in Example 1 was observed using a polarizing microscope. It was also found that when the temperature of the recording medium was increased at a rate of 2°C/min while performing tR using a polarizing microscope, the recording completely disappeared at 67°C, and that the recording could be erased by cooling from this temperature. Ta. Since the stearic acid crystal in the non-recording area melts at about 69°C, it was confirmed that this record is erased at a temperature lower than the melting point of the thin film crystal itself. Example 3 As in Example 1, a glass substrate on which chromium was vacuum-deposited was prepared. A polyimide resin solution (manufactured by Japan Goui Rubber Co., Ltd.: JIB-1) was applied on this chromium layer, and
After drying for a while, a polyimide layer with a thickness of about 0.1 μm was provided. On the other hand, a glass plate with a thickness of about 0.1 μm is prepared as a protective layer, a polyimide layer with a thickness of about 0.1 μm is provided on one side of the glass plate, and a gap material with a diameter of about
A small amount of μmaro silica particles was attached. Both of these at a temperature of 1
After heating in a constant temperature bath at 40°C, a small amount of 4-hexadecyloxybenzoic acid was placed on the polyimide layer on the glass substrate at the same temperature and melted. Next, one glass plate was gently placed over the melt from one end with the side to which the gap material was attached facing down, and the melt was spread and sandwiched throughout. Furthermore, a load was applied uniformly from above the covered glass plate, and the substrate was cooled from one end to slowly crystallize from one direction. Through the above operations, the chromium layer, the polyimide layer, the recording layer (approximately 0.8 μm thick) consisting of a thin crystalline film of 4-hexadecyloxybenzoic acid with almost uniform orientation, the polyimide layer, and the glass are laminated on the substrate in that order. A record of what happened. I got the recording medium. This recording medium was scanned with a laser beam in the same manner as in Example 1. However, the irradiation intensity was set to 12IllI1 on the recording medium surface. After irradiation, the same records as in Example 1 were confirmed when observed with a polarizing microscope. Furthermore, if the temperature of the recording medium is increased at a rate of 2°C/min while observing it with a polarizing microscope, 8°C
It was found that the records disappear completely at 0°C, and that the records can be erased by cooling from this temperature. Since the crystal thin film in the non-recording area melts at about 5° C., it was confirmed that this recording is erased at a temperature lower than the melting point of the thin film crystal itself. Table-1
第l図〜第5図は本発明の記録媒体の断面図であり、図
中1は基板、2は成長速度の異なる結晶或長軸を有する
薄膜状結晶からなる記録層、3は光熱変換層、4は下引
き層、5は保護層を示す.第6図は記録層の薄膜状結晶
の結晶軸方向の例を示す図であり、第7図は第6図の記
録媒体にレーザー光を照射したときに形成される温度分
布の例を示す図である。また、第8図は第6図の記録媒
体にレーザー光を照射したときに形成される記録部分と
非記録部分を上方より見たときの結晶軸方向の例を示す
図である。
第9図は記録層にベヘン酸の薄膜状結晶を用いたときの
,記録層のX線回折図である。
第7図
5μmφFigures 1 to 5 are cross-sectional views of the recording medium of the present invention, in which 1 is a substrate, 2 is a recording layer made of crystals with different growth rates or thin film crystals with long axes, and 3 is a photothermal conversion layer. , 4 indicates an undercoat layer, and 5 indicates a protective layer. FIG. 6 is a diagram showing an example of the crystal axis direction of the thin film crystal of the recording layer, and FIG. 7 is a diagram showing an example of the temperature distribution formed when the recording medium in FIG. 6 is irradiated with a laser beam. It is. Further, FIG. 8 is a diagram showing an example of the crystal axis direction of the recorded portion and non-recorded portion formed when the recording medium of FIG. 6 is irradiated with a laser beam, when viewed from above. FIG. 9 is an X-ray diffraction diagram of the recording layer when a thin film crystal of behenic acid is used for the recording layer. Fig. 7 5μmφ
Claims (4)
結晶から成るか、またはこれを含む記録層を有すること
を特徴とする記録媒体。(1) A recording medium comprising a recording layer made of or containing thin film-like crystals of a material whose crystal growth rate varies depending on the direction.
熱に変換する光熱変換層と方向により結晶の成長速度が
異なる材料の薄膜状結晶から成るか、またはこれを含む
記録層を有することを特徴とする記録媒体。(2) It has a recording layer that is made of or includes a photothermal conversion layer that absorbs some or all of the light irradiated during recording and converts it into heat, and a thin film crystal of a material whose crystal growth rate varies depending on the direction. A recording medium characterized by:
結晶が、光学的異方性を有する有機薄膜状結晶である請
求項(1)または(2)の記録媒体。(3) The recording medium according to claim (1) or (2), wherein the thin film crystal of a material whose crystal growth rate differs depending on the direction is an organic thin film crystal having optical anisotropy.
熱を印加、あるいは光を照射することにより薄膜状結晶
を部分的にかつ一時的に溶融した後、再結晶化させるこ
とにより、周囲の結晶とは方向の異なる結晶として記録
することを特徴とする記録方法。(4) The thin film crystal is partially and temporarily melted by applying heat or irradiating the recording medium according to any one of claims (1) to (3) with light, and then recrystallized. A recording method characterized by recording a crystal in a direction different from that of surrounding crystals.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1154302A JPH0316786A (en) | 1989-06-15 | 1989-06-15 | Recording medium and recording method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1154302A JPH0316786A (en) | 1989-06-15 | 1989-06-15 | Recording medium and recording method |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0316786A true JPH0316786A (en) | 1991-01-24 |
Family
ID=15581158
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1154302A Pending JPH0316786A (en) | 1989-06-15 | 1989-06-15 | Recording medium and recording method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0316786A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5441794A (en) * | 1991-08-29 | 1995-08-15 | Imperial Chemical Industries, Plc | Thermal melt transfer color ink sheet |
-
1989
- 1989-06-15 JP JP1154302A patent/JPH0316786A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5441794A (en) * | 1991-08-29 | 1995-08-15 | Imperial Chemical Industries, Plc | Thermal melt transfer color ink sheet |
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