JPH03165239A - Icp analyzing apparatus - Google Patents

Icp analyzing apparatus

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Publication number
JPH03165239A
JPH03165239A JP30314089A JP30314089A JPH03165239A JP H03165239 A JPH03165239 A JP H03165239A JP 30314089 A JP30314089 A JP 30314089A JP 30314089 A JP30314089 A JP 30314089A JP H03165239 A JPH03165239 A JP H03165239A
Authority
JP
Japan
Prior art keywords
plasma
gas flow
carrier gas
plasma flame
sample
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP30314089A
Other languages
Japanese (ja)
Inventor
Akira Okada
章 岡田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP30314089A priority Critical patent/JPH03165239A/en
Publication of JPH03165239A publication Critical patent/JPH03165239A/en
Pending legal-status Critical Current

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  • Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)

Abstract

PURPOSE:To rapidly remove impurities during analysis without stopping the device by disposing an inducing means for inducing filamentary plasma from a plasma flame on the outer side of carrier gas flow passage pipe systems used for carrying of a sample into the plasma flame. CONSTITUTION:An electrode 9 connected to a high-voltage generator 11 is provided as the means for inducing the filamentary plasma from the plasma flame on the outer side of the inside pipe 2 near the sample introducing pipe 8a. Namely, this inducing means is disposed on the outer side of the carrier gas flow passage pipe systems 2, 8a used for carrying the sample into the plasma flame, by which the filamentary plasma induced by the inducing means from the plasma flame and made to exist within the carrier gas flow passage pipe systems 2, 8a is brought into reaction with th impurities sticking and remaining on the inner side of the carrier gas flow passage pipe systems 2, 8a by the high temp. and the reactivity thereof. The impurities are thus re moved.

Description

【発明の詳細な説明】 [発明の目的] (産業上の利用分野) 本発明は、ICP(高周波誘導結合プラズマ)発光分析
、ないしICP質量分析を行えるICP分析装置に係り
、特に、プラズマ炎への試料搬入に用いられるキャリア
ガス流路管系の汚染除去を改良したICP分析装置に関
する。
[Detailed Description of the Invention] [Object of the Invention] (Industrial Application Field) The present invention relates to an ICP analyzer capable of performing ICP (high frequency inductively coupled plasma) emission spectrometry or ICP mass spectrometry. This invention relates to an ICP analyzer that improves the removal of contamination from a carrier gas flow pipe system used for carrying in samples.

(従来の技術) ICP発光分析ないしICP質量分析を行えるICP分
析装置は、近年、非常に高感度な分析方法として、広く
用いられている。
(Prior Art) In recent years, ICP analyzers capable of performing ICP emission spectrometry or ICP mass spectrometry have been widely used as an extremely sensitive analysis method.

このICP分析装置においては、試料導入室に接続され
るキャリアガス流路管系を介し、プラズマトーチ」二に
形成されているプラズマ炎へ試料が搬入されている。
In this ICP analyzer, a sample is introduced into a plasma flame formed in a plasma torch 2 via a carrier gas flow pipe system connected to a sample introduction chamber.

この種のICP分析装置においては、分析中に。In this type of ICP analyzer, during analysis.

前記キャリアガス流路管系の内側に、不純物が付着し残
留し易い、この不純物は、バックグランドを上昇させ、
高感度分析を妨げてしまうため、適宜除去する必要があ
る。
Impurities tend to adhere and remain inside the carrier gas flow path pipe system, and these impurities increase the background,
Since it interferes with high-sensitivity analysis, it is necessary to remove it as appropriate.

この不純物の除去に際しては、従来、ICP分析装置を
停止させ、装置からプラズマトーチを取り出し、このト
ーチのキャリアガス流路管系内壁を王水、フッ化水素酸
などの酸により洗浄していた。
Conventionally, when removing these impurities, the ICP analyzer was stopped, the plasma torch was taken out from the apparatus, and the inner wall of the carrier gas flow path pipe system of the torch was cleaned with an acid such as aqua regia or hydrofluoric acid.

(発明が解決しようとする課題) すなわち、従来のICP分析装置における不鈍物の除去
作業は、装置を停止させる必要があること、また1作業
が繁雑で長時間を要することなどの問題があった。
(Problems to be Solved by the Invention) In other words, the work of removing obtuse substances in conventional ICP analyzers has problems such as the need to stop the equipment and the fact that one work is complicated and takes a long time. Ta.

本発明はこのような従来技術の問題を考慮してなされた
ものであり、装置を停止することなく、分析中に、キャ
リアガス流R管系内側に付着残留する不純物を迅速に除
去できるICP分析装置を提供することを目的とする。
The present invention has been made in consideration of the problems of the prior art, and is an ICP analysis method that can quickly remove impurities that adhere and remain inside the carrier gas flow R pipe system during analysis without stopping the apparatus. The purpose is to provide equipment.

[発明の構成] (課題を解決するための手段) 上記目的を達成するために本発明は、試料導入室に接続
されるキャリアガス流路管系を介し、プラズマトーチ上
に形成されているプラズマ炎へ試料が搬入されるICP
分析装置において、プラズマ炎への試料の搬入に用いら
れるキャリアガス−aBg系の外側に設けられ、前記プ
ラズマ炎からフィラメンタリプラズマを誘引する誘引手
段を具備することな要旨としている。
[Structure of the Invention] (Means for Solving the Problems) In order to achieve the above object, the present invention provides a method for controlling plasma formed on a plasma torch through a carrier gas flow pipe system connected to a sample introduction chamber. ICP where the sample is introduced into the flame
The gist of the analyzer is to include an attracting means that is provided outside the carrier gas-aBg system used to carry the sample into the plasma flame and that attracts filamentary plasma from the plasma flame.

(作用) −F記手段を講じた本発明によれば、以下のような作用
を奏する。すなわち、プラズマ炎からフィラメンタリプ
ラズマを誘引する誘引手段を、プラズマ炎への試料の搬
入に用いられるキャリアガス流路管系外側に配設するこ
とにより、プラズマ炎から前記誘引手段に誘引されてキ
ャリアガス流路管系内に存在するフィラメンタリプラズ
マが。
(Function) - According to the present invention which takes the means described in F, the following effects are achieved. That is, by arranging an attracting means for attracting filamentary plasma from the plasma flame outside the carrier gas flow path pipe system used for carrying the sample into the plasma flame, carriers are attracted from the plasma flame to the attracting means. A filamentary plasma exists within the gas flow pipe system.

その高温(3000°C程度)および反応性によって、
キャリアガス流路管系内側に付着残留する不純物と反応
しこれを除去できるため、装置を停止することなく、分
析中に、前記不純物を迅速に除去できる。
Due to its high temperature (about 3000°C) and reactivity,
Since it is possible to react with and remove impurities that remain attached to the inside of the carrier gas flow path pipe system, the impurities can be quickly removed during analysis without stopping the apparatus.

(実施例) 以下、本発明にかかる■CP分析装置の一実施例につい
て、この分析装置のICPプラズマトーチ部の要部断面
を示す第1図を参照にしながら説明する。
(Embodiment) Hereinafter, an embodiment of the CP analyzer according to the present invention will be described with reference to FIG. 1, which shows a cross section of the main part of the ICP plasma torch section of this analyzer.

プラズマトーチ1は、プラズマ炎への試料の搬入に用い
られる内管2(後述するキャリアガス流路管系の一部)
、プラズマ炎に向けてアルゴンガスを送気するための中
間管3および外管4等がら構成されている。そして、前
記外管4の上部開口近傍の外周部には、高周波が加えら
れるコイル5が配設されている。また、前記内管2の下
部基端には、試料溶液7を霧状とするネプライザ8を内
設する試料導入管(試料導入室>8aが付設されており
、内管2とともにキャリアガス流RW−系を構成してい
る。
The plasma torch 1 includes an inner pipe 2 (part of a carrier gas flow path pipe system to be described later) used for carrying a sample into the plasma flame.
, an intermediate tube 3 and an outer tube 4 for supplying argon gas toward the plasma flame. A coil 5 to which high frequency waves are applied is disposed on the outer periphery of the outer tube 4 near the upper opening. Further, at the lower proximal end of the inner tube 2, there is attached a sample introduction tube (sample introduction chamber>8a) in which a nebulizer 8 for atomizing the sample solution 7 is installed, and together with the inner tube 2, a carrier gas flow RW - It constitutes a system.

また、この試料導入管8a[傍の内管2の外側には、プ
ラズマ炎からフィラメンタリプラズマ(後述)を誘引す
る手段として、高圧発生装置11と接続される電極9が
設けられている。なお、このフィラメンタリプラズマを
誘引する手段としては、前記電極9に限定するものでな
く、磁場を発生する磁石など、所要の大きさの電場ない
し磁場を発生する手段であればよい、また、電極9の配
設位置は、特定位置に限定するものではないが、内管2
全体に亘っての不純物除去を図る点から、内管2の極力
下方の位置であることが望ましい。
Further, on the outside of the inner tube 2 next to the sample introduction tube 8a, an electrode 9 connected to a high pressure generator 11 is provided as a means for attracting filamentary plasma (described later) from the plasma flame. Note that the means for attracting this filamentary plasma is not limited to the electrode 9, but any means that generates an electric field or magnetic field of a required magnitude, such as a magnet that generates a magnetic field, may be used. Although the arrangement position of 9 is not limited to a specific position,
In order to remove impurities over the entire area, it is desirable that the position be as low as possible in the inner tube 2.

また、前記高圧発生装置11の発生電圧を変化させ、フ
ィラメンタリプラズマをRIIHするとよい。
Further, it is preferable to RIIH the filamentary plasma by changing the voltage generated by the high voltage generator 11.

このような構成を有するICP分析装置において、分析
を行う際には、中間管3.外管4にアルゴンガスを通じ
、コイル5に高周波を加え、プラズマ炎6を誘起する。
In an ICP analyzer having such a configuration, when performing an analysis, the intermediate tube 3. Argon gas is passed through the outer tube 4 and high frequency waves are applied to the coil 5 to induce a plasma flame 6.

そして、試料溶液7を、ネプライザ8により霧状にして
、内管2を介しプラズマ炎6に導入する。このような過
程で、プラズマ炎6に導入された試料中の目的元素は、
励起され1発光もしくはイオン化されるため、図示しな
いモノクロメータにより、ICP発光分析法に基づき目
的元素の発光強度を測定するか、あるいは、ICP質量
分析法に基づき目的元素のイオン強度を測定するもので
ある。
Then, the sample solution 7 is atomized by a nebulizer 8 and introduced into the plasma flame 6 through the inner tube 2. In this process, the target element in the sample introduced into the plasma flame 6 is
Because it is excited and emitted or ionized, the emission intensity of the target element is measured using a monochromator (not shown) based on ICP emission spectrometry, or the ion intensity of the target element is measured based on ICP mass spectrometry. be.

このような分析を続けるなかで、内管2内壁に試料溶液
7が付着してくるが、この付着した試料溶液7によりバ
ックグランドが上昇したことを確認した際には、内管2
下部に設けられている前記電極9に、高電圧発生装置1
1がら高電圧を加え。
As this type of analysis continues, the sample solution 7 will adhere to the inner wall of the inner tube 2. When it is confirmed that the background has increased due to this adhered sample solution 7, the inner tube 2
A high voltage generator 1 is connected to the electrode 9 provided at the bottom.
1. Apply high voltage.

プラズマ炎6から電極9にフィラメンタリプラズマ10
を誘起させる。この誘起により内管2内に存在するフィ
ラメンタリプラズマ10が、その高温および反応性によ
って、内管2内壁に付着し残留する不純物と反応しこれ
を除去できるため、装置の可動中(分析中)であっても
、不純物を迅速に除去できる。また、電極9を、内管2
内に設けず、内管2の外側に設けているため、内管2内
を電極9により汚染することがない。
Filamentary plasma 10 from plasma flame 6 to electrode 9
induce. Due to this induction, the filamentary plasma 10 existing in the inner tube 2 can react with and remove impurities that adhere to and remain on the inner wall of the inner tube 2 due to its high temperature and reactivity, so that the filamentary plasma 10 existing in the inner tube 2 can be removed while the apparatus is in operation (during analysis). However, impurities can be removed quickly. Also, the electrode 9 is connected to the inner tube 2.
Since the electrodes 9 are not provided inside the inner tube 2 but are provided outside the inner tube 2, the inside of the inner tube 2 is not contaminated by the electrodes 9.

この除去効果として、シリコン(Si)およびホウ素(
B)をそれぞれ用い、50回の分析測定後に測定したバ
ックグランド(以下BGという)と、この測定後にフィ
ラメンタリプラズマ10により不純物を除去して測定し
たBGとを、プラズマトーチの酸による洗浄後のBG測
定値とともに。
As this removal effect, silicon (Si) and boron (
The background (hereinafter referred to as BG) measured after 50 analytical measurements using B), and the BG measured after removing impurities with filamentary plasma 10 after this measurement, were compared to the background after cleaning with acid from a plasma torch. Along with BG measurements.

表1に示す0表1から明らかなように、本実施例のIC
P分析装置を用い、フィラメンタリプラズマ10により
不純物を除去すると、バックグランドが1/10以下に
低下することがわかる。
As is clear from Table 1, the IC of this example
It can be seen that when impurities are removed by filamentary plasma 10 using a P analyzer, the background is reduced to 1/10 or less.

(以下、余白) 表1 [発明の効果] 以上説明したように1本発明にかかるICP分析装置に
おいて、プラズマ炎からフィラメンタリプラズマを誘引
する誘引手段を、プラズマ炎への試料の搬入に用いられ
るキャリアガス流路管系外側に配設することにより、プ
ラズマ炎から前記誘引手段に誘引されてキャリアガス流
路管系内に存在するフィラメンタリプラズマが、その高
温および反応性によって、キャリアガス流路管系内側に
付着し残留する不純物を除去できるため、装置を停止す
ることなく、分析中に、前記不純物を迅速に除去できる
(The following is a blank space) Table 1 [Effects of the Invention] As explained above, in the ICP analyzer according to the present invention, the attracting means for attracting filamentary plasma from the plasma flame is used to carry the sample into the plasma flame. By disposing the carrier gas flow path outside the carrier gas flow path pipe system, the filamentary plasma that is attracted from the plasma flame by the attracting means and exists within the carrier gas flow path pipe system, due to its high temperature and reactivity, can Since impurities that adhere to and remain inside the tube system can be removed, the impurities can be quickly removed during analysis without stopping the apparatus.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明にかかるICP分析装置のICPプラズ
マトーチ部の要部断面図である。 1・・・プラズマトーチ 2・・・内管(キャリアガス流路管系の一部)6・・・
プラズマ炎     7・・・試料溶液8a・・・試料
導入管(試料導入室)
FIG. 1 is a sectional view of a main part of an ICP plasma torch section of an ICP analyzer according to the present invention. 1... Plasma torch 2... Inner pipe (part of carrier gas flow path pipe system) 6...
Plasma flame 7...Sample solution 8a...Sample introduction tube (sample introduction chamber)

Claims (1)

【特許請求の範囲】 試料導入室に接続されるキャリアガス流路管系を介し、
プラズマトーチ上に形成されているプラズマ炎へ試料が
搬入されるICP分析装置において、 前記キャリアガス流路管系の外側に設けられ、前記プラ
ズマ炎からフィラメンタリプラズマを誘引する誘引手段
を具備することを特徴とするICP分析装置。
[Claims] Via a carrier gas flow path pipe system connected to the sample introduction chamber,
An ICP analyzer in which a sample is carried into a plasma flame formed on a plasma torch, comprising an attracting means provided outside the carrier gas flow pipe system to attract filamentary plasma from the plasma flame. An ICP analyzer characterized by:
JP30314089A 1989-11-24 1989-11-24 Icp analyzing apparatus Pending JPH03165239A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP30314089A JPH03165239A (en) 1989-11-24 1989-11-24 Icp analyzing apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP30314089A JPH03165239A (en) 1989-11-24 1989-11-24 Icp analyzing apparatus

Publications (1)

Publication Number Publication Date
JPH03165239A true JPH03165239A (en) 1991-07-17

Family

ID=17917363

Family Applications (1)

Application Number Title Priority Date Filing Date
JP30314089A Pending JPH03165239A (en) 1989-11-24 1989-11-24 Icp analyzing apparatus

Country Status (1)

Country Link
JP (1) JPH03165239A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007316030A (en) * 2006-05-29 2007-12-06 Tokyo Metropolitan Univ Atomic light emission detector having coaxial plasma torch

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007316030A (en) * 2006-05-29 2007-12-06 Tokyo Metropolitan Univ Atomic light emission detector having coaxial plasma torch
JP4724886B2 (en) * 2006-05-29 2011-07-13 公立大学法人首都大学東京 Atomic emission detector with built-in coaxial plasma torch

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