JPH03163890A - Optical semiconductor device - Google Patents

Optical semiconductor device

Info

Publication number
JPH03163890A
JPH03163890A JP30393589A JP30393589A JPH03163890A JP H03163890 A JPH03163890 A JP H03163890A JP 30393589 A JP30393589 A JP 30393589A JP 30393589 A JP30393589 A JP 30393589A JP H03163890 A JPH03163890 A JP H03163890A
Authority
JP
Japan
Prior art keywords
light emitting
heat sink
conductive layer
bonded
emitting element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP30393589A
Other languages
Japanese (ja)
Inventor
Takashi Nao
奈尾 隆
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP30393589A priority Critical patent/JPH03163890A/en
Publication of JPH03163890A publication Critical patent/JPH03163890A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To reduce the cost of manufacturing the title device by forming a surface to be bonded having almost the same shape as that of the bonding surface of a light emitting element on a heat sink and, at the same time, forming a groove around the surface to be bonded. CONSTITUTION:A light emitting element 201 is provided with a conductive layer 203 formed on one side of the surface of the element 201 and the light emitting surface of the element 201 is formed by opening a light transmitting window 204 through the layer 203. The other side bonding surface of the element 201 is bonded and fixed to the conductive layer 205 on the surface of a heat sink 202 with a conductive solvent adhesive 213 having a high coefficient of thermal conductivity. Thus this element 201 is constituted. A surface 207 to be bonded having almost the same shape as that of the bonding surface of the element 201 is formed on the heat sink 202 and, at the same time, a groove 206 is formed around the surface 207. Therefore, the manufacturing cost of this optical semiconductor device can be reduced, because flowing out of the adhesive 213 can be prevented by the groove 206 and it becomes unnecessary to pattern the conductive layer 205 on the surface of the heat sink 202.

Description

【発明の詳細な説明】 〔概要〕 表面発光型の光半導体装置に関し、 パターン形戒を不要にして製造コストを低減することを
目的とし、 一方面側を発光面とし、他方面側をヒートシンクの導電
層表面に対する接着面とする発光素子を備える光半導体
装置において、前記ヒートシンクに、発光素子の接着面
形状と略一致する形状の被接着面を形成すると共に、該
被接着面の周囲に溝を形成したことを特徴として構或す
る。
[Detailed Description of the Invention] [Summary] Regarding a surface-emitting type optical semiconductor device, the purpose of this invention is to reduce manufacturing costs by eliminating the need for a pattern shape. In an optical semiconductor device including a light emitting element that serves as an adhesion surface to a surface of a conductive layer, the heat sink is provided with a surface to be adhered having a shape that substantially matches the shape of the surface to be adhered to the light emitting element, and a groove is formed around the surface to be adhered. It is characterized by the fact that it has been formed.

〔産業上の利用分野〕[Industrial application field]

本発明は、光半導体装置に関し、特に、表面発光型の光
半導体装置に関する。
The present invention relates to an optical semiconductor device, and particularly to a surface-emitting type optical semiconductor device.

光の波長領域を使用した光通信は、データ伝送容量が大
きい、高速である、伝送品質が高いなどの数々の特徴を
有し近年その普及が著しい。
Optical communication using the wavelength region of light has many characteristics such as large data transmission capacity, high speed, and high transmission quality, and has become rapidly popular in recent years.

光通信システムの発光源には、小型で信頼性が高くしか
も低消費電力であることが求められるが、半導体レーザ
等の光半導体装置はこうした要求に充分に応えることが
できる。
Light emitting sources for optical communication systems are required to be small, highly reliable, and low in power consumption, and optical semiconductor devices such as semiconductor lasers can fully meet these demands.

ところで、光半導体装置は、熱によって発光特性が変動
するといった好ましくない温度依存性をもつので、放熱
対策が重要となる。
By the way, since optical semiconductor devices have unfavorable temperature dependence in that their light emitting characteristics change due to heat, heat dissipation measures are important.

〔従来の技術〕[Conventional technology]

第5.6図は従来の光半導体装置の図であり、表面発光
型の光半導体装置を示す図である。
FIG. 5.6 is a diagram of a conventional optical semiconductor device, and is a diagram showing a surface-emitting type optical semiconductor device.

第5.6図において、101は発光素子、102はヒー
トシンクであり、発光素子101は一方面に導電層10
3を積層し、この導電層103に光透過窓104を形成
すると共に、他方面をヒートシンク102表面の導電層
105に接着固定して構或する。なお、接着融材として
は導電性を有し、かつ熱伝導率の高いものを使用する。
In Fig. 5.6, 101 is a light emitting element, 102 is a heat sink, and the light emitting element 101 has a conductive layer 10 on one side.
A light transmitting window 104 is formed in the conductive layer 103, and the other side is adhesively fixed to the conductive layer 105 on the surface of the heat sink 102. Note that as the adhesive fusing material, one having electrical conductivity and high thermal conductivity is used.

このような構或において、発光素子101に対する電力
供給は一対の導電層103および105に接続するボン
ディングワイヤ106,107によって行われる。
In such a structure, power is supplied to the light emitting element 101 by bonding wires 106 and 107 connected to a pair of conductive layers 103 and 105.

また、発光素子101に発生した熱は、熱伝導率の高い
接着融材および導電層105を介して表面積の大きいヒ
ートシンク102へと伝達され、効果的に放熱されるの
で、発光素子101の温度変化を抑制でき、発光動作を
安定させることができる。
In addition, the heat generated in the light emitting element 101 is transmitted to the heat sink 102 with a large surface area through the adhesive fusing material with high thermal conductivity and the conductive layer 105, and is effectively radiated, so that the temperature of the light emitting element 101 changes. can be suppressed, and the light emission operation can be stabilized.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

しかしながら、このような従来の光半導体装置にあって
は、ヒートシンク102の表面に平坦な導電層105を
形戒し、この導電層105上に接着融材を流し込んで発
光素子101とヒートシンク102とを接着固定する構
或となっていたため、接着融材のボンディングパッド1
08への流出を阻止するために、導電層105に狭あい
部109をパターン形成しなければならず、製造コスト
の面で解決すべき課題があった。
However, in such a conventional optical semiconductor device, a flat conductive layer 105 is formed on the surface of the heat sink 102, and an adhesive is poured onto the conductive layer 105 to connect the light emitting element 101 and the heat sink 102. Since it was designed to be fixed with adhesive, bonding pad 1 of adhesive fusing material was used.
In order to prevent the leakage to the conductive layer 105, a narrow gap 109 must be patterned in the conductive layer 105, which poses an issue to be solved in terms of manufacturing cost.

〔発明の目的〕[Purpose of the invention]

本発明は、このような課題に鑑みてなされたもので、パ
ターン形成を不要にして製造コストを低減することを目
的としている。
The present invention has been made in view of such problems, and aims to reduce manufacturing costs by eliminating the need for pattern formation.

〔課題を解決するための手段〕[Means to solve the problem]

本発明は、上記目的を達或するために、一方面側を発光
面とし、他方面側をヒートシンクの導電層表面に対する
接着面とする発光素子を備える光半導体装置において、
前記ヒートシンクに、発光素子の接着面形状と略一致す
る形状の被接着面を形成すると共に、該被接着面の周囲
に溝を形成したことを特徴として構威する。
In order to achieve the above object, the present invention provides an optical semiconductor device including a light emitting element having one side as a light emitting surface and the other side as an adhesive surface to the conductive layer surface of a heat sink.
The heat sink is characterized in that a surface to be bonded is formed in a shape that substantially matches the shape of the surface to be bonded to the light emitting element, and a groove is formed around the surface to be bonded.

〔作用〕[Effect]

本発明では、ヒートシンク被接着面の周囲に溝が形成さ
れ、この溝によって接着融材の流出が阻止される。
In the present invention, a groove is formed around the surface of the heat sink to be adhered, and this groove prevents the adhesive flux from flowing out.

したがって、ヒートシンク表面の導電層(従来例の導電
層105に相当)をパターン化することなく、製造コス
トの低減が図られる。
Therefore, manufacturing costs can be reduced without patterning the conductive layer on the surface of the heat sink (corresponding to the conductive layer 105 in the conventional example).

(実施例〕 以下、本発明を図面に基づいて説明する。(Example〕 Hereinafter, the present invention will be explained based on the drawings.

第1〜4図は本発明に係る光半導体装置の一実施例を示
す図であり、表面発光型の半導体レーザに適用した例で
ある。
1 to 4 are diagrams showing an embodiment of the optical semiconductor device according to the present invention, which is an example applied to a surface-emitting type semiconductor laser.

まず、構成を説明する。第1図において、201は発光
素子、202はヒートシンクであり、発光素子201は
一方面側に導電層203を積層し、この導電層203に
光透過窓204を形成して発光面を形成すると共に、導
電性でかつ熱伝導率の高い所定の接着融材により、他方
面側の接着面をヒートシンク202表面の導電層(例え
ばTj/Pt/Auの3Nから或るメタライズ層)20
5に接着固定して構威する。
First, the configuration will be explained. In FIG. 1, 201 is a light emitting element, 202 is a heat sink, the light emitting element 201 has a conductive layer 203 laminated on one side, and a light transmitting window 204 is formed on this conductive layer 203 to form a light emitting surface. , the adhesive surface on the other side is bonded to the conductive layer (for example, a certain metallized layer from 3N of Tj/Pt/Au) 20 on the surface of the heat sink 202 using a predetermined adhesive fusing material that is electrically conductive and has high thermal conductivity.
Glue and fix it to 5.

第2図は導電層205の平面図であり、導電層205に
は複数本の溝(例えば断面V字溝あるいは断面U字溝)
206を形成する。溝206に囲まれた部分は発光素子
201の接着面形状と略一致する形状を有する被接着面
207を威す。
FIG. 2 is a plan view of the conductive layer 205, and the conductive layer 205 has a plurality of grooves (for example, a V-shaped groove or a U-shaped groove).
206 is formed. The portion surrounded by the groove 206 forms a bonded surface 207 having a shape that substantially matches the shape of the bonded surface of the light emitting element 201 .

また、第3図の断面図に示すように溝206はヒーシシ
ンク202の本体(例えばセラξツク材あるいはSi材
を用いる)208まで達して形成する。なお、第1図の
209.210はそれぞれボンディングワイヤであり、
ボンディングワイヤ209は導電層203上のボンディ
ングパッド211に接続し、ボンディングワイヤ210
は導電層205上のボンディングバンド212に接続す
る。
Further, as shown in the sectional view of FIG. 3, the groove 206 is formed to reach the main body 208 of the heat sink 202 (made of ceramic material or Si material, for example). Note that 209 and 210 in FIG. 1 are bonding wires, respectively.
Bonding wire 209 connects to bonding pad 211 on conductive layer 203, and bonding wire 210 connects to bonding pad 211 on conductive layer 203.
connects to bonding band 212 on conductive layer 205.

第4図は発光素子201をヒートシンク202に接着固
定した状態を示す断面図である。両者の接着は、導電層
205の被接着面207に接着融材213を溶融塗布し
、その上に発光素子201を位置ぎめしながら載置して
行う。
FIG. 4 is a sectional view showing a state in which the light emitting element 201 is adhesively fixed to the heat sink 202. Adhesion between the two is performed by melting and applying an adhesive fusing material 213 to the surface 207 of the conductive layer 205 to be adhered, and positioning and placing the light emitting element 201 thereon.

この接着処理時において、被接着面207に塗布した溶
融状態の接着融材213は、被接着面207周囲の溝2
06によってその流出が阻止される。したがって、導電
層205に狭あい部(従来例の狭あい部109)等を形
成する必要がなく、狭あい部のためのパターン形成工程
を省略でき製造コストを低減できる。
During this bonding process, the molten adhesive flux 213 applied to the surface to be bonded 207 is applied to the grooves 213 around the surface to be bonded 207.
06 prevents its outflow. Therefore, it is not necessary to form a narrow part (the narrow part 109 in the conventional example) in the conductive layer 205, and the process of forming a pattern for the narrow part can be omitted and manufacturing costs can be reduced.

しかも、本実施例では、被接着面207の位置を溝20
6によって確実に識別でき、発光素子201の位置合わ
せを正確かつ容易化することができる。
Moreover, in this embodiment, the position of the surface to be adhered 207 is set to the groove 20.
6, the light emitting element 201 can be reliably identified, and the positioning of the light emitting element 201 can be made accurate and easy.

〔発明の効果〕〔Effect of the invention〕

本発明によれば、ヒートシンクに、発光素子の接着面形
状と略一致する形状の被接着面を形成すると共に、該被
接着面の周囲に溝を形成したので、該溝によって接着融
材の流出を阻止できる。したがって、ヒートシンク表面
の導電層にパターンを形成しなくてもよくなり、製造コ
ストを低減することができる。
According to the present invention, the heat sink is formed with a bonded surface having a shape that substantially matches the bonded surface shape of the light emitting element, and a groove is formed around the bonded surface, so that the bonding material flows out through the groove. can be prevented. Therefore, it is not necessary to form a pattern on the conductive layer on the surface of the heat sink, and manufacturing costs can be reduced.

【図面の簡単な説明】[Brief explanation of the drawing]

第1〜4図は本発明に係る光半導体装置の一実施例を示
す図であり、 第1図はその外観斜視図、 第2図はそのヒートシンク202の平面図、第3図はそ
のヒートシンク202の断面図、第4図はその光半導体
装置の断面図である。 第5,6図は従来例を示す図であり、 第5図はその外観斜視図、 第6図はその断面図である。 20 1 ・ 202 ・ 206 ・ 207 ・ 2 13 ・ ・発光素子、 ・ヒー1・シンク、 ・溝、 ・被接着面、 ・接着融材。
1 to 4 are diagrams showing an embodiment of the optical semiconductor device according to the present invention, in which FIG. 1 is a perspective view of its appearance, FIG. 2 is a plan view of its heat sink 202, and FIG. 3 is its heat sink 202. FIG. 4 is a cross-sectional view of the optical semiconductor device. 5 and 6 are diagrams showing a conventional example, with FIG. 5 being an external perspective view thereof, and FIG. 6 being a sectional view thereof. 20 1 ・ 202 ・ 206 ・ 207 ・ 2 13 ・ ・Light emitting element, ・Heat 1 sink, ・Groove, ・Glued surface, ・Adhesive melting material.

Claims (1)

【特許請求の範囲】 一方面側を発光面とし、 他方面側をヒートシンクの導電層表面に対する接着面と
する発光素子を備える光半導体装置において、 前記ヒートシンクに、 発光素子の接着面形状と略一致する形状の被接着面を形
成すると共に、 該被接着面の周囲に溝を形成したことを特徴とする光半
導体装置。
[Scope of Claims] In an optical semiconductor device comprising a light emitting element having one surface as a light emitting surface and the other surface as an adhesive surface to a conductive layer surface of a heat sink, the heat sink has a shape substantially matching the shape of the adhesive surface of the light emitting element. What is claimed is: 1. An optical semiconductor device comprising: a surface to be adhered having a shape of a shape, and a groove formed around the surface to be adhered.
JP30393589A 1989-11-22 1989-11-22 Optical semiconductor device Pending JPH03163890A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP30393589A JPH03163890A (en) 1989-11-22 1989-11-22 Optical semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP30393589A JPH03163890A (en) 1989-11-22 1989-11-22 Optical semiconductor device

Publications (1)

Publication Number Publication Date
JPH03163890A true JPH03163890A (en) 1991-07-15

Family

ID=17927055

Family Applications (1)

Application Number Title Priority Date Filing Date
JP30393589A Pending JPH03163890A (en) 1989-11-22 1989-11-22 Optical semiconductor device

Country Status (1)

Country Link
JP (1) JPH03163890A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0746045A2 (en) * 1995-05-27 1996-12-04 Robert Bosch Gmbh Arrangement for mounting an optoelectronic device on a carrier

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0746045A2 (en) * 1995-05-27 1996-12-04 Robert Bosch Gmbh Arrangement for mounting an optoelectronic device on a carrier
EP0746045A3 (en) * 1995-05-27 1997-05-07 Bosch Gmbh Robert Arrangement for mounting an optoelectronic device on a carrier

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