JPH03160332A - Thermometric resistor - Google Patents
Thermometric resistorInfo
- Publication number
- JPH03160332A JPH03160332A JP30008689A JP30008689A JPH03160332A JP H03160332 A JPH03160332 A JP H03160332A JP 30008689 A JP30008689 A JP 30008689A JP 30008689 A JP30008689 A JP 30008689A JP H03160332 A JPH03160332 A JP H03160332A
- Authority
- JP
- Japan
- Prior art keywords
- circuit pattern
- insulating substrate
- lead
- resistance
- resistance circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 230000004044 response Effects 0.000 abstract description 9
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 10
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 10
- 229910052697 platinum Inorganic materials 0.000 description 5
- 239000012779 reinforcing material Substances 0.000 description 5
- 238000000605 extraction Methods 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000020169 heat generation Effects 0.000 description 2
- 238000003698 laser cutting Methods 0.000 description 2
- 230000004043 responsiveness Effects 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- IHWJXGQYRBHUIF-UHFFFAOYSA-N [Ag].[Pt] Chemical compound [Ag].[Pt] IHWJXGQYRBHUIF-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- JUWSSMXCCAMYGX-UHFFFAOYSA-N gold platinum Chemical compound [Pt].[Au] JUWSSMXCCAMYGX-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- SWELZOZIOHGSPA-UHFFFAOYSA-N palladium silver Chemical compound [Pd].[Ag] SWELZOZIOHGSPA-UHFFFAOYSA-N 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Landscapes
- Non-Adjustable Resistors (AREA)
Abstract
Description
【発明の詳細な説明】 （産業上の利用分野） この発明は、熱応答性にすぐれた測温抵抗体に関する。[Detailed description of the invention] (Industrial application field) The present invention relates to a resistance temperature detector with excellent thermal responsiveness.
（従来の技術） 測温抵抗体の従来構造を第３図に示す。(Conventional technology) The conventional structure of a resistance temperature detector is shown in FIG.
第３図に示された測温抵抗体は、アルミナなどの絶縁基
板１の上に、たとえば白金からなる抵抗回路パターン２
ａが形成されている。この抵抗回路パターン２ａは次の
ようにして形或される。つまり、絶縁基板ｌの上に白金
からなる抵抗膜２を蒸着、スパッタリングあるいは白金
ペーストの印刷、焼き付けにより全面に形成し、その後
ドライエッチング、ケミカルエッチングあるいはレーザ
ーカットにより溝３ａを形成し、図示したように蛇行状
に形或される。また、抵抗膜２の絶縁基板１の周縁には
溝３ｂが形成されている。この溝３ａは抵抗膜２がその
端部から剥がれてもこの溝３ｂのところで剥がれが阻止
され、それ以上内部へ剥がれが進まない役割を果すもの
である。抵抗回路パターン２ａの左右端部側には引出電
極４が形或されており、この引出電極４の上には、金、
金−白金、銀、銀−パラジウム、銀一白金、ニッケル、
銅などの導電膜５が形成され、この上に金、白金、白金
クラッド線などのリード線６が溶接などの手段で接続さ
れている。この場合、必ずしも導電膜５を形或する必要
はなく、直接リード線６を引出電極４の上に、たとえば
半田で接続してもよい。また、このリード線６の接続個
所はガラス、樹脂などの補強材７で被覆、保護し、リー
ド線６の補強を行っている。なお、左側のリード線６の
接続個所は補強材７で被覆、保護していないが、右側の
リード線４と同じように、補強材７で被覆、保護される
。The resistance temperature detector shown in FIG.
a is formed. This resistor circuit pattern 2a is shaped as follows. That is, a resistive film 2 made of platinum is formed on the entire surface of an insulating substrate l by vapor deposition, sputtering, printing or baking of platinum paste, and then grooves 3a are formed by dry etching, chemical etching or laser cutting, as shown in the figure. It is shaped like a meander. Furthermore, a groove 3b is formed at the periphery of the insulating substrate 1 of the resistive film 2. This groove 3a serves the role that even if the resistive film 2 is peeled off from its end, the peeling is prevented at this groove 3b, and the peeling does not proceed further inside. Extracting electrodes 4 are formed on the left and right end sides of the resistance circuit pattern 2a.
Gold-platinum, silver, silver-palladium, silver-platinum, nickel,
A conductive film 5 made of copper or the like is formed, and a lead wire 6 made of gold, platinum, platinum clad wire or the like is connected thereto by means such as welding. In this case, it is not necessary to form the conductive film 5, and the lead wire 6 may be directly connected to the lead electrode 4 by, for example, solder. Further, the connection portion of the lead wire 6 is covered and protected with a reinforcing material 7 such as glass or resin, thereby reinforcing the lead wire 6. Note that the connection portion of the left lead wire 6 is not covered or protected with the reinforcing material 7, but is covered and protected with the reinforcing material 7 in the same way as the right lead wire 4.
この第３図に示した従来構造のものは、絶縁基板１の全
面に抵抗膜２を形成しており、抵抗回路パターン２ａの
形成、引出電極４の形成がドライエッチング、ケミカル
エッチングあるいはレーザーカットにより簡単に行える
ため、製造工程の短縮に効果がある。In the conventional structure shown in FIG. 3, a resistive film 2 is formed on the entire surface of an insulating substrate 1, and the resistive circuit pattern 2a and the lead electrode 4 are formed by dry etching, chemical etching, or laser cutting. Since it is easy to perform, it is effective in shortening the manufacturing process.
（従来技術の問題点）
この種の測温抵抗体は、通常リード線６に電流を流し、
抵抗回路パターン２ａを一定温度で発熱させている。そ
して、流量を測定する場合には、この測温抵抗体を空気
などの流路に設置し、流量に変化が起こると、熱平衡状
態に変化が起こり、これを公知のブリッジ回路にて変化
量を測定する。(Problems with the prior art) In this type of resistance temperature detector, a current is normally passed through the lead wire 6,
The resistance circuit pattern 2a is made to generate heat at a constant temperature. When measuring the flow rate, this resistance temperature detector is installed in the air flow path, and when the flow rate changes, the thermal equilibrium state changes, and this change is detected using a known bridge circuit. Measure.
しかしながら、第３図に示したものは、抵抗回路パター
ン２ａと引出電極４とが連続して形成されており、しか
も白金など熱伝導のよい材料で形或されているため、抵
抗回路パターン２ａで発生した熱が引出電極４側へ移動
しゃすいく、リード線６まで熱が伝わるため、測温抵抗
体全体の熱容量が大きくなり、さらに引出電極４や補強
材７にも熱が蓄えられるので、流量変化に対する応答速
度が遅くなるという問題がある。However, in the case shown in FIG. 3, the resistor circuit pattern 2a and the extraction electrode 4 are formed continuously and are made of a material with good thermal conductivity such as platinum. The generated heat moves to the lead electrode 4 side and is transmitted to the lead wire 6, increasing the heat capacity of the entire resistance temperature detector.Furthermore, heat is stored in the lead electrode 4 and the reinforcing material 7, so the flow rate increases. There is a problem in that the response speed to changes is slow.
（問題点を解決するための手段）
この発明は、抵抗回路パターンから引出電極への熱の移
動を抑えて、測温抵抗体全体の熱容量を小さくすること
により、温度や流量などの変化に対して熱応答性にすぐ
れた測温抵抗体を提供することを目的とするものである
。(Means for Solving the Problems) This invention suppresses the transfer of heat from the resistance circuit pattern to the extraction electrode and reduces the heat capacity of the entire resistance temperature detector, thereby preventing changes in temperature, flow rate, etc. The object of the present invention is to provide a resistance temperature detector with excellent thermal responsiveness.
すなわち、この発明の要旨とするところは、絶縁基板の
上に抵抗回路パターンおよびその引出電極が形成されて
おり、この絶縁基板の両端部と引出端子との間には、抵
抗膜が形成されていない領域が存在しているを特徴とす
る測温抵抗体である。That is, the gist of the present invention is that a resistor circuit pattern and its lead electrode are formed on an insulating substrate, and a resistive film is formed between both ends of this insulating substrate and the lead terminal. This is a resistance temperature detector characterized by the presence of a region where there is no temperature difference.
（作用および効果）
この発明の構或にかかる測温抵抗体によれば、絶縁基板
の両端部と抵抗回路パターンの引出電極との間に抵抗膜
が形成されていない領域が存在しており、抵抗回路パタ
ーンで発生した熱の絶縁基板端部への伝導が抑えられこ
とになる。(Operations and Effects) According to the temperature measuring resistor according to the structure of the present invention, there is a region where a resistive film is not formed between both ends of the insulating substrate and the lead electrode of the resistive circuit pattern, This means that conduction of heat generated in the resistor circuit pattern to the edge of the insulating substrate is suppressed.
したがって、従来の構造のものにくらべて、抵抗回路パ
ターンからの熱の移動が少なくなり、抵抗回路パターン
での熱応答の改善が図れることになり、熱応答特性を向
上させることができる。Therefore, compared to the conventional structure, the transfer of heat from the resistor circuit pattern is reduced, the thermal response of the resistor circuit pattern can be improved, and the thermal response characteristics can be improved.
抵抗膜が形或されていない領域を存在させるに当っては
、この測温抵抗体を基板、ホルダーなどに取付けるとき
、抵抗回路パターンの発熱温度とこれらの取付け個所と
の温度差が熱応答特性に悪影響を与えないよう、具体的
には、１００℃を越えるように設定される。When a resistance temperature detector is attached to a substrate, holder, etc., the temperature difference between the heat generation temperature of the resistor circuit pattern and these attachment points is determined by the thermal response characteristic. Specifically, the temperature is set to exceed 100°C so as not to adversely affect the temperature.
（実施例）
以下、この発明を図示した各実施例にもとづいて詳細に
説明する。(Examples) Hereinafter, the present invention will be described in detail based on illustrated embodiments.
なお、第３図で説明した測温抵抗体と同じ構或部分につ
いては同一番号を付して説明を省略する。Note that the same components as those of the temperature measuring resistor explained in FIG. 3 are given the same numbers, and the explanation will be omitted.
実施例１，
第１図は、この発明にかかる測温抵抗体の第１の実施例
である。Embodiment 1 FIG. 1 shows a first embodiment of a resistance temperature detector according to the present invention.
この第１図の測温抵抗体の特徴は、絶縁基板１の両端部
と抵抗回路パターン２ａの引出電極４との間に抵抗膜が
形成されていない領域８が存在している点である。A feature of the temperature measuring resistor shown in FIG. 1 is that there is a region 8 where no resistance film is formed between both ends of the insulating substrate 1 and the lead electrode 4 of the resistance circuit pattern 2a.
なお、抵抗膜が形成されていない領域８の幅Ｗは次のよ
うに設定される。つまり、絶縁基板の各端部側と引出電
極４との温度差が１００℃を越えるような幅に設定され
る。これは温度差が１００℃以下になると、絶縁基板１
の両端部での発熱が高くなり、熱容量が大きくなるため
、感熱特性が劣化するからである。Note that the width W of the region 8 where the resistive film is not formed is set as follows. In other words, the width is set such that the temperature difference between each end of the insulating substrate and the extraction electrode 4 exceeds 100°C. This means that when the temperature difference is less than 100℃, the insulating substrate 1
This is because the heat generation at both ends becomes high and the heat capacity becomes large, resulting in deterioration of the heat-sensitive characteristics.
この実施例１によれば、抵抗膜が形或されていない領域
８の存在により、抵抗回路パターン２ａに通電したとき
、この抵抗回路パターン２ａで発生した熱が絶縁基板１
の両端部側へ移動するのを遮ることができ、熱応答速度
が改善されることになる。According to the first embodiment, due to the presence of the region 8 where the resistive film is not formed, when the resistive circuit pattern 2a is energized, the heat generated in the resistive circuit pattern 2a is transferred to the insulating substrate 1.
It is possible to prevent the heat from moving toward both ends, improving the thermal response speed.
実施例２．
第２図は、この発明にかかる測温抵抗体の第２の実施例
である。Example 2. FIG. 2 shows a second embodiment of the temperature measuring resistor according to the present invention.
この第２図に示した例は、第１図の測温抵抗体が取付基
板１１に固定されている保持端子１２により保持、固定
されたものである。In the example shown in FIG. 2, the resistance temperature detector shown in FIG. 1 is held and fixed by a holding terminal 12 fixed to a mounting board 11. In the example shown in FIG.
この実施例２によれば、実施例１と同様、絶縁基板１の
両端部側に抵抗膜が形或されていない領域８が存在して
おり、抵抗回路パターン２ａに通電したとき、この抵抗
回路パターン２ａの熱は絶縁基板１の両端部から保持端
子ｌ２に伝わりにくくなり、熱応答速度が改善されるこ
とになる。According to the second embodiment, as in the first embodiment, there are regions 8 on both end sides of the insulating substrate 1 where no resistive film is formed, and when the resistive circuit pattern 2a is energized, this resistive circuit The heat of the pattern 2a is less likely to be transmitted from both ends of the insulating substrate 1 to the holding terminal l2, and the thermal response speed is improved.
なお、リード線６は保持端子１２に電気接続してもよい
。Note that the lead wire 6 may be electrically connected to the holding terminal 12.
第１図は、この発明にかかる測温抵抗体の第１の実施例
を示す平面図、
第２図は、この発明にかかる測温抵抗体の第２の実施例
を示す斜視図、
第３図は、従来例にかかる測温抵抗体の平面図である。
１は絶縁基板、２は抵抗膜、２ａは抵抗回路パターン、
４は引出電極、５は導電膜、６はリード線、
７は補強材、
８は抵抗膜を形成していない領
域。FIG. 1 is a plan view showing a first embodiment of a resistance temperature detector according to the present invention, FIG. 2 is a perspective view showing a second embodiment of a resistance temperature detector according to the present invention, and FIG. The figure is a plan view of a conventional resistance temperature sensor. 1 is an insulating substrate, 2 is a resistive film, 2a is a resistive circuit pattern,
4 is an extraction electrode, 5 is a conductive film, 6 is a lead wire, 7 is a reinforcing material, and 8 is a region where no resistive film is formed.
Claims (1)
が形成されており、この絶縁基板の両端部と引出端子と
の間には、抵抗膜が形成されていない領域が存在してい
るを特徴とする測温抵抗体。A resistive circuit pattern and its lead electrode are formed on an insulating substrate, and a region where no resistive film is formed exists between both ends of the insulating substrate and the lead terminal. Resistance temperature sensor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30008689A JPH03160332A (en) | 1989-11-17 | 1989-11-17 | Thermometric resistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30008689A JPH03160332A (en) | 1989-11-17 | 1989-11-17 | Thermometric resistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03160332A true JPH03160332A (en) | 1991-07-10 |
Family
ID=17880538
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP30008689A Pending JPH03160332A (en) | 1989-11-17 | 1989-11-17 | Thermometric resistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03160332A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104150626A (en) * | 2014-07-31 | 2014-11-19 | 苏州美生环保科技有限公司 | Oil-water separation machine |
-
1989
- 1989-11-17 JP JP30008689A patent/JPH03160332A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104150626A (en) * | 2014-07-31 | 2014-11-19 | 苏州美生环保科技有限公司 | Oil-water separation machine |
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