JPH03157838A - Magneto-optical recording device - Google Patents
Magneto-optical recording deviceInfo
- Publication number
- JPH03157838A JPH03157838A JP1296948A JP29694889A JPH03157838A JP H03157838 A JPH03157838 A JP H03157838A JP 1296948 A JP1296948 A JP 1296948A JP 29694889 A JP29694889 A JP 29694889A JP H03157838 A JPH03157838 A JP H03157838A
- Authority
- JP
- Japan
- Prior art keywords
- magnetic layer
- thin film
- super thin
- magneto
- ultra
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 claims abstract description 40
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 8
- 239000000956 alloy Substances 0.000 claims abstract description 8
- 229910052723 transition metal Inorganic materials 0.000 claims abstract description 7
- 238000010030 laminating Methods 0.000 claims description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical group [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 abstract description 9
- 238000000034 method Methods 0.000 abstract description 7
- 229910000808 amorphous metal alloy Inorganic materials 0.000 abstract 1
- 238000000151 deposition Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 46
- 239000010408 film Substances 0.000 description 10
- 239000000758 substrate Substances 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 4
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 239000011241 protective layer Substances 0.000 description 3
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 230000005415 magnetization Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 229910052761 rare earth metal Inorganic materials 0.000 description 2
- 150000002910 rare earth metals Chemical class 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 229910001020 Au alloy Inorganic materials 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- 230000005374 Kerr effect Effects 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910000767 Tm alloy Inorganic materials 0.000 description 1
- GEIAQOFPUVMAGM-UHFFFAOYSA-N ZrO Inorganic materials [Zr]=O GEIAQOFPUVMAGM-UHFFFAOYSA-N 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000003353 gold alloy Substances 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、カー回転角θ８の大きい新規な光磁気記録媒
体に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a novel magneto-optical recording medium with a large Kerr rotation angle θ8.
最近、高密度、大容量、高いアクセス速度、並びに高い
記録及び再生速度を含めた種々の要求を満足する光学的
記録再生方法、それに使用される記録装置、再生装置及
び記録媒体を開発しようとする努力が成されている。Recently, efforts have been made to develop optical recording and reproducing methods, recording devices, reproducing devices, and recording media used therein that satisfy various requirements including high density, large capacity, high access speed, and high recording and reproducing speed. Efforts are being made.
広範囲な光学的記録再生方法の中で、光磁気記録再生方
法は、情報を記録再生した後、消去することができ、再
び新たな情報を記録することが繰り返し何度でも可能で
あるというユニークな利点のために、最も大きな魅力に
満ちている。Among a wide range of optical recording and reproducing methods, the magneto-optical recording and reproducing method is unique in that it can be erased after recording and reproducing information, and new information can be recorded again and again. Because of its advantages, it is full of the greatest charm.
この光磁気記録再生方法で使用される記録媒体は、記録
層として１層又は多層の垂直磁化膜（ｐｅｒｐｅｎｄｉ
ｃｕｌａｒ ｍａｇｎｅｔｉｃ １ａｙｅｒ ｏｒ １
ａｙｅｒｓ）を有する。そして、現在、この磁化膜を、
希土類−遷移金属合金の非晶質の薄膜例えばＧｄＰｅや
ＧｄＣｏ。The recording medium used in this magneto-optical recording and reproducing method has one or multiple perpendicular magnetization films as a recording layer.
cular magnetic 1ayer or 1
ayers). And now, this magnetized film is
Amorphous thin films of rare earth-transition metal alloys such as GdPe and GdCo.
ＧｄＦｅＣｏ、 ＴｂＦｅ、 ＴｂＣｏ、 ＴｂＦｅＣ
ｏなどで構成したものが、主流となっている。GdFeCo, TbFe, TbCo, TbFeC
The mainstream is one composed of o and the like.
しかしながら、希土類（以下、ＲＩＥと略す）−遷移金
属（以下、ＴＭと略す）合金の薄膜は、θ、が比較的小
さく、そのためＣ／Ｎ比が小さいという欠点を有する。However, thin films of rare earth (hereinafter abbreviated as RIE)-transition metal (hereinafter abbreviated as TM) alloys have a drawback that θ is relatively small and therefore the C/N ratio is small.
そこで、最近、ｐｔ原子を１〜７原子積層した第１超薄
膜と、Ｃｏ原子を０．５〜２．５原子積層した第２超薄
膜とを交互に多数積層してなる厚さ５０〜５００人程度
の非晶質磁性層を記録層とする光磁気記録媒体が提案さ
れた（特開平１−１６９７５７号参照）。Therefore, recently, a film with a thickness of 50 to 500 mm is obtained by alternately stacking a first ultra-thin film in which 1 to 7 PT atoms are stacked and a second ultra-thin film in which 0.5 to 2.5 Co atoms are stacked. A magneto-optical recording medium having a human-sized amorphous magnetic layer as a recording layer has been proposed (see Japanese Patent Laid-Open No. 1-169757).
しかしながら、このＰｔ／Ｃｏ超薄膜積層構造の媒体は
、ＲＥ−ＴＭ合金系媒体に比べると比較的保磁力Ｈｃが
小さく、そのため■記録された情報の保存安定性が悪い
、■最小読取単位（マーク、ピット、ビットなどと呼ば
れる）が比較的大きく、記録密度が小さいという問題点
があった。However, this Pt/Co ultra-thin film laminated structure medium has a relatively small coercive force Hc compared to RE-TM alloy media, and as a result: ■ The storage stability of recorded information is poor; ■ The minimum reading unit (mark , pits, bits, etc.) are relatively large, and the recording density is low.
そこで、本発明者は鋭意研究した結果、Ｐｔ／Ｃ。 Therefore, as a result of intensive research, the present inventors discovered Pt/C.
超薄膜積層構造を第１磁性層とし、これにＨｃの相対的
に大きなＲＥ−ＴＭ金合金非晶質薄膜からなる第２磁性
層を交換結合により結合させると、第１磁性層の比較的
低いＨｅが増加しく増加したＨｃを以下［見掛けの保磁
力Ｈｃ” Ｊと呼ぶ）、そのため前記問題点が解決され
ることを見い出した。When an ultra-thin film laminated structure is used as the first magnetic layer and a second magnetic layer made of an amorphous thin film of RE-TM gold alloy with a relatively high Hc is coupled to this by exchange coupling, the relatively low Hc of the first magnetic layer is It has been found that Hc in which He increases is hereinafter referred to as the apparent coercive force Hc''J, thereby solving the above-mentioned problems.
そして、更に研究を進めた結果、第１磁性層は、第２磁
性層と接触する超薄膜がｐｔの場合とＣｏの場合と２通
りあるが、後者の方がＨｅ”が大きくなることを見い出
した。As a result of further research, they discovered that there are two types of first magnetic layer, one in which the ultra-thin film in contact with the second magnetic layer is made of PT and one in which Co is made, but the latter has a larger He''. Ta.
更にまた、ｐｔに限らずＰｄ等の白金族原子でも同様で
あることを見い出し、本発明を成すに至った。Furthermore, they have discovered that the same effect can be applied not only to pt but also to platinum group atoms such as Pd, leading to the present invention.
よって、本発明は、
「白金族原子からなる第１超薄膜とＣｏからなる第２超
薄膜とが交互に積層されてなる第１磁性層と、
これに交換結合した第２磁性層と
が積層されてなる光磁気記録媒体において、前記第１磁
性層の第２磁性層と接触する超薄膜を前記第２超薄膜と
し、
前記第２磁性層を希土類−遷移金属合金の非晶質薄膜で
構成したことを特徴とする媒体」を提供する。Therefore, the present invention provides a first magnetic layer in which a first ultra-thin film made of platinum group atoms and a second ultra-thin film made of Co are alternately laminated, and a second magnetic layer exchange-coupled thereto. In the magneto-optical recording medium, the ultra-thin film in contact with the second magnetic layer of the first magnetic layer is the second ultra-thin film, and the second magnetic layer is composed of an amorphous thin film of a rare earth-transition metal alloy. media that features the following.
白金族例えばＰｔ、 Ｐｄの原子を１〜７原子積層した
第１超薄膜（非晶質）とＣｏ原子を０．５〜２．５原子
積層した第２超薄膜（非晶質）が交互に多数積３
層されてなる第１磁性層（垂直磁化膜）自体は、既述の
ように公知である。本発明では、第１磁性層の膜厚は５
０〜８００人が好ましい。A first ultra-thin film (amorphous) in which 1 to 7 atoms of a platinum group such as Pt or Pd are stacked and a second ultra-thin film (amorphous) in which 0.5 to 2.5 Co atoms are stacked are alternately formed. The first magnetic layer (perpendicular magnetization film) itself, which is composed of three multi-layered layers, is well known as described above. In the present invention, the thickness of the first magnetic layer is 5
Preferably 0 to 800 people.
第１又は第２超薄膜のいずれか一方又は両方に、種々の
目的で第３元素を添加してもよい。例えば、キュリー点
を下げる等の目的でＡ１、Ｓｉ、 Ｔｉ、 Ｖ。A third element may be added to either or both of the first or second ultra-thin film for various purposes. For example, A1, Si, Ti, V for the purpose of lowering the Curie point, etc.
Ｃｒ、 Ｍｎ５Ｆｅ、 Ｎｉ、 Ｃｕ、 Ｚｎ、 Ｇａ
、 Ｇｅ、 Ｚｒ、Ｎｂ、 Ｍｏ。Cr, Mn5Fe, Ni, Cu, Zn, Ga
, Ge, Zr, Nb, Mo.
Ｒｕ、 Ｒｈ、 Ａｇ、 Ｉｎｓ Ｓｎ、 Ｓｂ、 Ｈ
ｆ、Ｔａ、 Ｗ、 Ｒｅ、 Ｏｓ。Ru, Rh, Ag, Ins Sn, Sb, H
f, Ta, W, Re, Os.
Ｉｒ、 Ａｕ、 Ｐｂ、 Ｂｉの元素のうち少なくとも
１種を適宜添加しても良い。At least one of the elements Ir, Au, Pb, and Bi may be added as appropriate.
第１磁性膜に交換結合させる第２磁性層自体も公知であ
る。第２磁性層は、希土類例えばＧｄ、 Ｔｂ、Ｈｏ５
Ｄｙ等と遷移金属例えばＦｅ、 Ｃｏとの多元合金例え
ばＴｂＦｅ、 ＴｂＣｏ、 ＴｂＰｅＣｏ５ＧｄＦｅ、
ＧｄＣｏ、 ＧｄＰｅＣｏ。The second magnetic layer itself, which is exchange-coupled to the first magnetic film, is also known. The second magnetic layer is made of rare earth metal such as Gd, Tb, Ho5
Multi-component alloys of Dy etc. and transition metals such as Fe, Co such as TbFe, TbCo, TbPeCo5GdFe,
GdCo, GdPeCo.
ＤｙＦｅ、 ＤｙＣｏ、 ＤｙＰｅＣｏ、 ＧｄＴｂＦ
ｅ、 ＧｄＴｂＦｅＣｏ、 ＤＹＴｂＰｅｌＤｙＴｂＣ
ｏ、 ＤｙＴｂＦｅＣｏ等の非晶質垂直磁化膜で構成さ
れる。膜厚は５０〜１０００人が好ましい。DyFe, DyCo, DyPeCo, GdTbF
e, GdTbFeCo, DYTbPelDyTbC
o, consists of an amorphous perpendicularly magnetized film such as DyTbFeCo. The film thickness is preferably 50 to 1000 people.
第１、第２磁性層の間に交換結合を働かすには、両層を
できるだけ接近させればよい。実際には、一方の層を真
空中で形成した後、真空を破らすに−
他方の層を形成すれば、両層は交換結合する。In order to induce exchange coupling between the first and second magnetic layers, both layers should be brought as close as possible. In fact, if one layer is formed in a vacuum and then the other layer is formed when the vacuum is broken, both layers will be exchange coupled.
交換結合した第１、第２磁性層間に働く交換結合力σ１
により第１磁性層の見掛けの保磁力Ｈｃ”は増加する。Exchange coupling force σ1 acting between the exchange-coupled first and second magnetic layers
Accordingly, the apparent coercive force Hc'' of the first magnetic layer increases.
σ、は本発明に従い第２超薄膜（ＣＯ）が第２磁性層（
ＲＥ−ＴＭ）と直接接触させると大きくなる。但し、Ｈ
ｃ”は第２磁性層の膜厚に反比例するので同一の薄膜で
Ｈｃ”を比較すべきである。According to the present invention, σ is the second ultra-thin film (CO) formed by the second magnetic layer (
RE-TM). However, H
Since c'' is inversely proportional to the thickness of the second magnetic layer, Hc'' should be compared for the same thin film.
第１１第２磁性層は、この分野で公知のガラス基板、プ
ラスチック基板上に形成されるが、どちらの層を先に形
成してもよい。基板側読み出し法を採用するときには、
基板上に先に第１磁性層を形成すべきである。The eleventh second magnetic layer is formed on a glass substrate or a plastic substrate, which are known in this field, but either layer may be formed first. When adopting the board side readout method,
A first magnetic layer should be formed on the substrate first.
基板上には予め溝材層、保護層、カー効果増強膜等が形
成されていてもよく、また、最上層の磁性層の上にも保
護層、反射層等を形成してもよい。A groove material layer, a protective layer, a Kerr effect enhancing film, etc. may be formed in advance on the substrate, and a protective layer, a reflective layer, etc. may also be formed on the uppermost magnetic layer.
保護層の材料としては、ＺｎＳ 、 ｋｌ ｇｏｓ、Ｔ
ａ２０５ 、ＭｇＯ、ＳｉＯ２、ＴｉＯ２、Ｆｅ、Ｏｓ
、ＺｒＯ，、Ｂｉｔ０３等の酸化物系誘電体、あるい
はＺｒＮ 、 ＴｉＮ 。Materials for the protective layer include ZnS, kl gos, and T.
a205, MgO, SiO2, TiO2, Fe, Os
, ZrO, Bit03, etc., or ZrN, TiN.
５ｔＪｔ 、Ａｊ！Ｎ 、 ＯＮ、 ＴａＮ １ＮｂＮ
等の窒化物系誘電体等が使用できる。5tJt, Aj! N, ON, TaN 1NbN
Nitride-based dielectrics such as can be used.
３元のマグネ１−ロン・スパッタリング装置を用意し、
ターゲットと（７てＰｔ、 Ｃｏ及びＴｂＦｅＣｏ合金
をセットした。Prepare a three-dimensional Magne1-ron sputtering device,
A target (7) and Pt, Co and TbFeCo alloys were set.
そして、これらのターゲットと対向させた水冷装置（＝
ｊきの回転基台にディスク（φ“−１２０ｍｍ）状のガ
ラス基板を載置した。Then, a water cooling device (=
A disk (φ"-120 mm)-shaped glass substrate was placed on a rotating base.
最初にＰｔ、 Ｃｏ各ターゲットを使用し、ガス圧５×
１０−Ｔ ｏ ｒ ｒのアルゴン雰囲気中において二元
（Ｐｔ。First, Pt and Co targets were used, and the gas pressure was 5×
Binary (Pt) in an argon atmosphere of 10-T o r r.
Ｃｏ）同時マグネトロン・スパッタリングを行なった。Co) Simultaneous magnetron sputtering was performed.
Ｃｏターゲットに対しては投入電流０．４０Ａの直流ス
パッタリング、ｐｔターゲットに対しては投入電力４０
０Ｗの高周波スパッタリングとした。このときガラス基
板を載置した回転基台の回転数を適当に設定することに
より、Ｐｔｌ〜７原子を積層した第１超薄膜とＣｏ０．
５〜２．５原子を積層１７た第２超薄膜とを交互に多数
積層（７た多層構造の第１磁性層（膜厚１００ Ａ）を
形成した。この第１磁性層は最上層が第２超薄膜（ＣＯ
）となるように形成した。DC sputtering with input current of 0.40A for Co target, input power of 40A for PT target
High frequency sputtering was performed at 0W. At this time, by appropriately setting the rotation speed of the rotating base on which the glass substrate is placed, the first ultra-thin film laminated with Ptl~7 atoms and Co0.
A first magnetic layer (thickness: 100 A) with a multilayer structure was formed by alternately laminating a large number of second ultra-thin films with 17 layers of 5 to 2.5 atoms. 2 Ultra-thin film (CO
).
次に真空を破らずにターゲットをＴｂＦｅＣｏ合金に代
えて同じＡｒガス圧下でスパッタリングを行ない、第２
磁性層（膜厚５００人）を形成した。Next, without breaking the vacuum, the target was replaced with a TbFeCo alloy and sputtering was performed under the same Ar gas pressure.
A magnetic layer (film thickness: 500 layers) was formed.
こうして得られた本実施例の記録媒体の諸物性各層とも
単層膜での物性値を次の第１表に示す。Various physical properties of the recording medium of this example thus obtained The physical property values of each layer as a single layer film are shown in Table 1 below.
第１表
本実施例の見掛けの保磁力ＨＣ″を測定したところ第１
磁性層（Ｐｔ／Ｃｏ交互多層）のＨｅ＝１６５０ｅに比
べて１００００ｅ以上増加していた。Table 1: The apparent coercive force HC'' of this example was measured.
Compared to He=1650e of the magnetic layer (Pt/Co alternating multilayer), the increase was more than 10000e.
それに対して、第２磁性層と接触する超薄膜を第１超薄
膜（Ｐｉ）とした記録媒体は、Ｈｅ”はほとんど増加し
ていなかった。On the other hand, in the recording medium in which the first ultra-thin film (Pi) was used as the ultra-thin film in contact with the second magnetic layer, He'' hardly increased.
〔発明の効果〕
＝７
以りの通り、本発明によれば、第１磁性層によりθ１が
大きく、それでいて第２超薄膜（Ｃｏ）を接触面に配置
して、ＲＥ−ＴＭ合金薄膜の第２磁性層を交換結合させ
たので、第１磁性層の１１ｃ゛が大きくなり、保有安定
性が高く、記録密度の高い光磁気記録媒体が提供される
。[Effect of the invention] = 7 As described above, according to the present invention, θ1 is large due to the first magnetic layer, and the second ultra-thin film (Co) is disposed on the contact surface, so that the Since the two magnetic layers are exchange-coupled, the 11c of the first magnetic layer is increased, providing a magneto-optical recording medium with high retention stability and high recording density.
本発明の媒体は、それ自体特開昭５７−７８６５２号に
開示された２層膜タイプの光磁気記録媒体に使用するこ
とができる外、特開昭６２−１７５９４８号に開示され
た光変調方式のオーバーライド可能な光磁気記録媒体そ
れ自体又はそれを構成する第１層（記録層）として使用
することができる。The medium of the present invention can be used not only in the double-layer type magneto-optical recording medium disclosed in JP-A-57-78652, but also in the optical modulation method disclosed in JP-A-62-175,948. It can be used as an overridable magneto-optical recording medium itself or a first layer (recording layer) constituting it.
＝８=8
Claims (1)
膜とが交互に積層されてなる第１磁性層と、 これに交換結合した第２磁性層と が積層されてなる光磁気記録媒体において、前記第１磁
性層の第２磁性層と接触する超薄膜を前記第２超薄膜と
し、 前記第２磁性層を希土類−遷移金属合金の非晶質薄膜で
構成したことを特徴とする媒体。[Claims] A first magnetic layer formed by alternately laminating a first ultra-thin film made of platinum group atoms and a second ultra-thin film made of Co, and a second magnetic layer exchange-coupled thereto are laminated. In the magneto-optical recording medium, the ultra-thin film in contact with the second magnetic layer of the first magnetic layer is the second ultra-thin film, and the second magnetic layer is composed of an amorphous thin film of a rare earth-transition metal alloy. A medium characterized by
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1296948A JPH03157838A (en) | 1989-11-15 | 1989-11-15 | Magneto-optical recording device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1296948A JPH03157838A (en) | 1989-11-15 | 1989-11-15 | Magneto-optical recording device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03157838A true JPH03157838A (en) | 1991-07-05 |
Family
ID=17840256
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1296948A Pending JPH03157838A (en) | 1989-11-15 | 1989-11-15 | Magneto-optical recording device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03157838A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0492584A2 (en) * | 1990-12-28 | 1992-07-01 | Sony Corporation | Magneto-optical recording medium |
| US5370945A (en) * | 1991-07-22 | 1994-12-06 | Canon Kabushiki Kaisha | Magnetooptic recording medium |
| US5702830A (en) * | 1992-07-28 | 1997-12-30 | Johnson Matthey Public Limited Company | Magneto-optical recording materials system |
-
1989
- 1989-11-15 JP JP1296948A patent/JPH03157838A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0492584A2 (en) * | 1990-12-28 | 1992-07-01 | Sony Corporation | Magneto-optical recording medium |
| US5958575A (en) * | 1990-12-28 | 1999-09-28 | Sony Corporation | Magneto-optical recording medium |
| US5370945A (en) * | 1991-07-22 | 1994-12-06 | Canon Kabushiki Kaisha | Magnetooptic recording medium |
| US5702830A (en) * | 1992-07-28 | 1997-12-30 | Johnson Matthey Public Limited Company | Magneto-optical recording materials system |
| US6022630A (en) * | 1992-07-28 | 2000-02-08 | Johnson Matthey Electronics, Inc. | Platinum and cobalt multilayer recording materials system and process for making same |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP0519949B1 (en) | Platinum or palladium/cobalt multilayer on a zinc oxide or indium oxide layer for magneto-optical recording | |
| US4789606A (en) | Magneto-optical recording medium | |
| JPS61108112A (en) | Vertically magnetized film | |
| US5030512A (en) | Magneto-optical recording medium | |
| JPH03157838A (en) | Magneto-optical recording device | |
| JPS62289948A (en) | Magneto-optical recording medium | |
| JPS63273236A (en) | Magneto-optical recording medium | |
| JPH057775B2 (en) | ||
| JPH0660452A (en) | Magneto-optical recording medium | |
| JP3237977B2 (en) | Magneto-optical recording medium | |
| JPS62289946A (en) | Magneto-optical recording medium | |
| JPS61278061A (en) | Photomagnetic recording medium | |
| JP2726298B2 (en) | Magneto-optical recording method | |
| JPS6168748A (en) | Photomagnetic recording medium | |
| JP2536639B2 (en) | Exchange coupled multilayer magneto-optical recording medium | |
| JPH07107757B2 (en) | Magneto-optical recording medium | |
| JPH056584A (en) | Magneto-optical recording medium | |
| JPS639048A (en) | Magneto-optical recording medium | |
| JPH05101465A (en) | Magneto-optical memory element | |
| JPH10134434A (en) | Magneto-optical recording element | |
| JPS6289255A (en) | Photomagnetic recording medium | |
| JPH04243037A (en) | Magneto-optical recording medium | |
| JPH07254182A (en) | Magneto-optical recording medium | |
| JPH04301242A (en) | Magneto-optical recording medium | |
| JPH06325419A (en) | Magneto-optical recording medium |