JPH03154390A - Wavelength selection device for excimer laser - Google Patents
Wavelength selection device for excimer laserInfo
- Publication number
- JPH03154390A JPH03154390A JP29235889A JP29235889A JPH03154390A JP H03154390 A JPH03154390 A JP H03154390A JP 29235889 A JP29235889 A JP 29235889A JP 29235889 A JP29235889 A JP 29235889A JP H03154390 A JPH03154390 A JP H03154390A
- Authority
- JP
- Japan
- Prior art keywords
- etalon
- gas
- airtight holder
- airtight
- excimer laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- BJQHLKABXJIVAM-UHFFFAOYSA-N bis(2-ethylhexyl) phthalate Chemical compound CCCCC(CC)COC(=O)C1=CC=CC=C1C(=O)OCC(CC)CCCC BJQHLKABXJIVAM-UHFFFAOYSA-N 0.000 claims abstract description 36
- 239000011261 inert gas Substances 0.000 claims abstract description 12
- 239000003463 adsorbent Substances 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 239000010453 quartz Substances 0.000 claims description 2
- 239000007789 gas Substances 0.000 abstract description 24
- 239000002245 particle Substances 0.000 abstract description 9
- 238000001179 sorption measurement Methods 0.000 abstract description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 3
- 239000000470 constituent Substances 0.000 abstract 1
- 238000001035 drying Methods 0.000 abstract 1
- 230000003595 spectral effect Effects 0.000 description 4
- 239000012530 fluid Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 229910021536 Zeolite Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- HNPSIPDUKPIQMN-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Al]O[Al]=O HNPSIPDUKPIQMN-UHFFFAOYSA-N 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 239000010457 zeolite Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
- H01S3/1062—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using a controlled passive interferometer, e.g. a Fabry-Perot etalon
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Optics & Photonics (AREA)
- Lasers (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
この発明は、エキシマレーザ用波長選択装置、特に、狭
帯域エキシマレーザを発振させるためのエキシマレーザ
用波長選択装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a wavelength selection device for an excimer laser, and particularly to a wavelength selection device for an excimer laser for oscillating a narrow band excimer laser.
［従来の技術］
従来のこの種のエキシマレーザ用波長選択装置の一例を
示すと第２図に示されているような、例えば特開昭６２
−１９８１８２号公報に示されているものがある。[Prior Art] An example of a conventional wavelength selection device for an excimer laser of this kind is shown in FIG.
There is one shown in Japanese Patent No.-198182.
図において、符号（１）は全反射ミラー、（２）は出射
ミラーであり、上記全反射ミラー（１）と出射ミラー（
２）とからなる共振器を備えたエキシマレザのキャビテ
ィ（６）内に、波長選択素子としてのエアギャップエタ
ロン（４）が１個配置されている。In the figure, code (1) is a total reflection mirror, and code (2) is an output mirror, and the total reflection mirror (1) and the output mirror (
One air gap etalon (4) as a wavelength selection element is arranged in a cavity (6) of an excimer laser equipped with a resonator consisting of (2) and (2).
次に（３）はウィンドウ（５）（５’）によって密閉さ
れているチャンバであり、チャンバ（３）にはレーザ媒
質として例えばアルゴンとふっ素の混合ガス、クリプト
ンとふっ素の混合ガスなどが充填されている。Next, (3) is a chamber sealed by windows (5) (5'), and the chamber (3) is filled with a laser medium such as a mixed gas of argon and fluorine, or a mixed gas of krypton and fluorine. ing.
また、エアギャップエタロン（４）は、第３図に示すよ
うに、一方の面に高反射膜（４３）を、他方の面に反射
防止膜（４４）を形成した２枚の合成石英基板（４１）
を、高反射膜（４３）の面同士が対向するように、間に
スペーサ（４２）を介して接合したものであり、この対
向した２個の高反射膜（４３）の面の間で光が多重反射
し干渉することによって、波長選択性が得られる。なお
、上記高反射膜（４３）及び反射防止膜（４４）は誘電
体多層膜で構成されている。Furthermore, as shown in Fig. 3, the air gap etalon (4) is made up of two synthetic quartz substrates (43) with a high reflection film (43) formed on one surface and an antireflection film (44) formed on the other surface. 41)
are joined with a spacer (42) in between so that the surfaces of the high reflection films (43) face each other, and light is transmitted between the two opposing surfaces of the high reflection films (43). Wavelength selectivity is obtained by multiple reflections and interference. Note that the high reflection film (43) and antireflection film (44) are composed of dielectric multilayer films.
次にその動作について説明する。Next, its operation will be explained.
レーザ媒質の充填されているチャンバ（３）内で放電を
行なうと、全反射ミラー（１）と出射ミラ（２）との間
でレーザ発振する。このとき、全反射ミラー（１）と出
射ミラー（２）との間にエアギヤノブエタロン（４）が
挿入されているので、波長が選択され、スペクトル幅の
狭いレーザ光が出射する。When a discharge occurs in the chamber (3) filled with a laser medium, laser oscillation occurs between the total reflection mirror (1) and the emission mirror (2). At this time, since the air gear knob etalon (4) is inserted between the total reflection mirror (1) and the output mirror (2), the wavelength is selected and laser light with a narrow spectral width is emitted.
［発明が解決しようとする課題］
従来のエキシマレーザ用波長選択装置は、以上のように
構成され作用するので、大気中の水分がエタロン（４）
に吸着され、高反射膜（４３）中に入ることによって、
高反射膜（４３）の反射率が変動してしまい、従って、
エタロンとしての光学特性が変化するという問題点があ
った。[Problems to be Solved by the Invention] The conventional wavelength selection device for excimer laser is configured and operates as described above, so that moisture in the atmosphere is removed from the etalon (4).
By being adsorbed to and entering the high reflection film (43),
The reflectance of the highly reflective film (43) fluctuates, and therefore,
There was a problem in that the optical characteristics of the etalon changed.
すなわち、次の例は上記水分がＫＬＦエキシマレザに用
いたエアギャップエタロン（４）に吸着した場合の影響
を計算によって求めたものである。That is, in the following example, the influence when the moisture is adsorbed on the air gap etalon (4) used in the KLF excimer laser is determined by calculation.
エタロンの構成
エアギャップ；４４０μｍ
高反射膜の構成 Ｎｏ／Ｈ（ＬＨ）ａ／Ｎｓ （１９層
の交互多層）
ただし、Ｎｏ：空気、Ｈ： Ａｌｔｏｓ、Ｌ ： ５ｉ
ｆｔ、Ｎｓ：基板（Ｓｉｎｓ）
このようなエタロンで水分吸着前後の各特性を計算した
結果を表に示す。Etalon configuration Air gap: 440 μm High reflective film configuration No/H(LH)a/Ns (alternating multilayer of 19 layers) However, No: Air, H: Altos, L: 5i
ft, Ns: Substrate (Sins) The results of calculating each characteristic before and after moisture adsorption in such an etalon are shown in the table.
表 水分吸着によるエタロンの特性変動第４図に波長２
００ｎｍ〜３００ｎｍの範囲における、上記表のＡ１．
０３とＳｉｎ、との屈折率より算出した分光透過率の計
算結果を示す。Table: Changes in etalon characteristics due to moisture adsorption. Wavelength 2 is shown in Figure 4.
A1 in the above table in the range of 00 nm to 300 nm.
The calculation results of the spectral transmittance calculated from the refractive index of 03 and Sin are shown.
表かられかるように、水分吸着によって得られるＫＬＦ
レーザ（λ−２４８ｎｍ）のスペクトル半値幅は４．７
ｐｍから５．０ｐｍへと広がる。As seen from the table, KLF obtained by water adsorption
The spectral half width of the laser (λ-248nm) is 4.7
It spreads from pm to 5.0pm.
また、水分以外に、パーティクル、油の蒸気、発生ガス
等も付着するので、レーザ光により高反射＠（４３）上
で発熱したり、付着、吸着物と高反射１（４３）とが反
応することによってもエアギャップエタロン（４）の特
性は低下する。In addition, in addition to moisture, particles, oil vapor, generated gas, etc. also adhere, so the laser beam generates heat on the high reflection @ (43), or the adhering or adsorbed matter reacts with the high reflection 1 (43). This also deteriorates the characteristics of the air gap etalon (4).
このように、従来装置は、上記のような水分を吸着し、
パーティクル等の付着、吸着によって光学特性が変化す
るという問題点を有しており、このような問題点を解決
したいという課題を有していた。In this way, conventional devices adsorb moisture as described above,
There is a problem in that the optical properties change due to adhesion or adsorption of particles, and there has been a need to solve this problem.
この発明は、上記の課題を解決するためになされたもの
で、パーティクル、水、油の蒸気、あるいは活性ガス等
を付着、吸着させることなく、初期特性を長期間維持で
きるエタロンを備えているエキシマレーザ用波長選択装
置を得ることを目的とする。This invention was made to solve the above problems, and is an excimer equipped with an etalon that can maintain its initial characteristics for a long period of time without adhering to or adsorbing particles, water, oil vapor, or active gas. The purpose of this invention is to obtain a wavelength selection device for a laser.
［課題を解決するための手段］
この発明に係るエキシマレーザ用波長選択装置は、エタ
ロンを気密ホルダー内に格納し、気密ホルダー内はフィ
ルター、吸着剤、ウィンドウ等によって高度に乾燥かつ
清浄に保つようにしているものである。[Means for Solving the Problems] The excimer laser wavelength selection device according to the present invention stores an etalon in an airtight holder, and keeps the inside of the airtight holder highly dry and clean using a filter, an adsorbent, a window, etc. This is what we do.
［作 用］
この発明におけるエキシマレーザ用波長選択装置は、エ
タロンを、内部を清浄かつ乾燥した状態にしている気密
ホルダー内に格納しているので、水分や不純物の付着あ
るいは吸着もなく、従って、これらによって特性が低下
することもない。[Function] Since the wavelength selection device for excimer laser according to the present invention stores the etalon in an airtight holder whose interior is kept clean and dry, there is no adhesion or adsorption of moisture or impurities. The characteristics do not deteriorate due to these factors.
［実施例］
以下、この発明をその一実施例を示す図に基づいて説明
する。[Example] Hereinafter, the present invention will be explained based on the drawings showing one example thereof.
第１図において、符号（１０）はエタロン（４）を気密
に格納している気密ホルダー、（１１）は気密ホルダー
（１０）に設けられているウィンドウ、（１２）は気密
ホルダー（１０）の内部に設けられている活性ガスの吸
着剤（１３）は気密ホルダー（１０）に充填する不活性
ガスの不活性ガス導入手段であるガス導入パイプ、（１
４）は上記不活性ガス導入手段を構成するガス導出バイ
ブ、（１５）及び（１６）は気密ホルダー（１０）内に
清浄な不活性ガスを導入、導出するための同様のバルブ
、（［７）は導入ガス中及び気密ホルダー内のパーティ
クルを除去するフィルタであり、上記ガス導入パイプ（
＋３）、ガス導出バイブ（１４）、バルブ（１５）（１
６）及びフィルタ（１７）によって不活性ガス導入手段
（１８）が構成される。In Fig. 1, reference numeral (10) is an airtight holder that airtightly stores the etalon (4), (11) is a window provided in the airtight holder (10), and (12) is the airtight holder (10). The active gas adsorbent (13) provided inside is connected to a gas introduction pipe (1) which is an inert gas introduction means for filling the airtight holder (10) with an inert gas.
4) is a gas discharge vibrator constituting the inert gas introduction means, (15) and (16) are similar valves for introducing and discharging clean inert gas into the airtight holder (10), ([7 ) is a filter that removes particles in the introduced gas and in the airtight holder, and the gas introduction pipe (
+3), gas outlet vibe (14), valve (15) (1
6) and the filter (17) constitute an inert gas introducing means (18).
上記のように構成されているこの発明によるエキシマレ
ーザ用波長選択装置においては、ガス導入パイプ（１３
）より、不活性ガス例えばＮｔ、 Ｈｅ、 Ｎｅすどの
高純度ガスをフィルタ（１７）を介して気密ホルタ−（
１０）内に導入する。これにより、エタロン（４）周囲
の雰囲気は非常に乾燥し、かつ、パーティクルや活性ガ
スのない清浄な状態になる。In the excimer laser wavelength selection device according to the present invention configured as described above, the gas introduction pipe (13
), a high purity gas such as Nt, He, Ne, etc. is passed through a filter (17) into an airtight holter (
10). As a result, the atmosphere around the etalon (4) becomes extremely dry and clean, free of particles and active gas.
−４上記不活性ガスを導入した後、気密ホルダ（１０）
は封じ切っておいてもよい。-4 After introducing the above inert gas, place the airtight holder (10)
may be kept sealed.
気密ホルダー（１０）の外側からシール部等を透過して
侵入してくる水分や、気密ホルダー（１０）の内部の構
成部品から発生する活性ガスは、吸着剤（１２）によっ
て吸着除去されるので、気密ホルダー（１０）内に常に
清浄に保たれる。Moisture that enters from the outside of the airtight holder (10) through the seal part, etc. and active gas generated from the internal components of the airtight holder (10) are adsorbed and removed by the adsorbent (12). , kept clean at all times in an airtight holder (10).
なお、吸着剤（１２）としては、合成ゼオライト、シリ
カゲル、活性炭、又は、これらの混合物などを用いると
よい。In addition, as the adsorbent (12), synthetic zeolite, silica gel, activated carbon, or a mixture thereof may be used.
また、エタロン（４）により選択する波長をコントロー
ルする手段としては、エアギャップの距離を変化させる
方法、レーザ光の光軸とエタロンとの角度を変化させる
方法、あるいは、エアギャップ内に流体を入れ、その流
体の圧力を変化させる方法等がある。この発明における
エキシマレーザ用波長選択装置においては、上記いずれ
の方法も可能であり、特に、ギャップ間の流体の圧力を
変化させる方法では、ガス導入パイプ（１３）及びガス
導出バイブ（１４）から導入、導出する不活性ガスの圧
力を制御することにより達成される。In addition, the wavelength selected by the etalon (4) can be controlled by changing the distance of the air gap, changing the angle between the optical axis of the laser beam and the etalon, or inserting a fluid into the air gap. There are methods such as changing the pressure of the fluid. In the wavelength selection device for an excimer laser according to the present invention, any of the above methods is possible, and in particular, in the method of changing the pressure of the fluid between the gaps, the gas is introduced from the gas introduction pipe (13) and the gas outlet vibe (14). , is achieved by controlling the pressure of the inert gas being led out.
［発明の効果コ
以上のようにこの発明によれば、内部に吸着剤を設けて
いる気密ホルダーなにエタロンを気密に格納すると共に
不活性ガス導入手段を設けて気密ホルダー内を乾燥しか
つ清浄な不活性雰囲気としているので、エタロンの周囲
は乾燥していると共に清浄な不活性ガスで充満され、従
って、エタロンは水分を吸着したり、パーティクルを吸
着することもなく、その結果、エタロンの初期特性を維
持できるエキシマレーザ用波長選択装置が得られる効果
を有している。[Effects of the Invention] As described above, according to the present invention, an airtight holder with an adsorbent inside stores an etalon airtightly, and an inert gas introducing means is provided to dry and clean the inside of the airtight holder. Because of the inert atmosphere, the area around the etalon is dry and filled with clean inert gas. Therefore, the etalon does not adsorb moisture or particles, and as a result, the initial stage of the etalon is This has the effect of providing a wavelength selection device for excimer laser that can maintain its characteristics.
第１図はこの発明のエタロン部分の一実施例を示す断面
図、第２図は従来のエキシマレーザ用波長選択装置の一
例の側面図、第３図はエキシマレーザ用エタロンの断面
図、第４図は水分の吸着前後におけるエタロンの高反射
膜の分光特性を示す線図である。
図において、（４）・・エタロン、（１０）・・気密ホ
ルダー、（１１）・・ウィンドウ、（１２）・・吸着剤
、（１３）・・ガス導入パイプ、（１４）・・ガス導出
バイブ、（１５）（１６）・・バルブ、（１７）・・フ
ィルタ、（１８）・・不活性ガス導入手段。
なお、各図中、同一符号は同−又は相当部分を示す。FIG. 1 is a sectional view showing an embodiment of the etalon portion of the present invention, FIG. 2 is a side view of an example of a conventional wavelength selection device for excimer laser, FIG. 3 is a sectional view of an etalon for excimer laser, and FIG. The figure is a diagram showing the spectral characteristics of the high reflection film of the etalon before and after adsorption of moisture. In the figure, (4)...Etalon, (10)...Airtight holder, (11)...Window, (12)...Adsorbent, (13)...Gas inlet pipe, (14)...Gas outlet vibrator. , (15), (16)...valve, (17)...filter, (18)...inert gas introduction means. In each figure, the same reference numerals indicate the same or corresponding parts.
Claims (1)
一対の合成石英基板を、上記高反射膜を対向させると共
に一定間隔を有して接合しているエタロンを備えている
エキシマレーザ用波長選択装置において、吸着剤、ウィ
ンドウ、及び、清浄にされた不活性ガス導入手段を備え
ている気密ホルダー内に、上記エタロンを収納している
ことを特徴とするエキシマレーザ用波長選択装置。A wavelength for excimer lasers comprising a pair of synthetic quartz substrates each having a high reflection film made of a dielectric multilayer film formed on one surface, and an etalon bonded to the substrates with the high reflection films facing each other and at a constant interval. A wavelength selection device for an excimer laser, characterized in that the etalon is housed in an airtight holder equipped with an adsorbent, a window, and a means for introducing a cleaned inert gas.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29235889A JPH03154390A (en) | 1989-11-13 | 1989-11-13 | Wavelength selection device for excimer laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29235889A JPH03154390A (en) | 1989-11-13 | 1989-11-13 | Wavelength selection device for excimer laser |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03154390A true JPH03154390A (en) | 1991-07-02 |
Family
ID=17780769
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP29235889A Pending JPH03154390A (en) | 1989-11-13 | 1989-11-13 | Wavelength selection device for excimer laser |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03154390A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1998057213A1 (en) * | 1997-06-10 | 1998-12-17 | Nikon Corporation | Optical device, method of cleaning the same, projection aligner, and method of producing the same |
| US7196796B2 (en) | 2002-01-21 | 2007-03-27 | Gigaphoton, Inc. | Wavelength detecting apparatus, laser apparatus, and wavelength detecting method |
-
1989
- 1989-11-13 JP JP29235889A patent/JPH03154390A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1998057213A1 (en) * | 1997-06-10 | 1998-12-17 | Nikon Corporation | Optical device, method of cleaning the same, projection aligner, and method of producing the same |
| US7196796B2 (en) | 2002-01-21 | 2007-03-27 | Gigaphoton, Inc. | Wavelength detecting apparatus, laser apparatus, and wavelength detecting method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7196796B2 (en) | Wavelength detecting apparatus, laser apparatus, and wavelength detecting method | |
| US6560254B2 (en) | Line-narrowing module for high power laser | |
| US6219368B1 (en) | Beam delivery system for molecular fluorine (F2) laser | |
| US3555450A (en) | Laser window having a metallic frame arranged to permit post optical grinding and polishing | |
| US6487229B2 (en) | Beam delivery system for molecular fluorine (F2) laser | |
| US6036321A (en) | Crystal isolation housing | |
| JPH03154390A (en) | Wavelength selection device for excimer laser | |
| JPH0437181A (en) | Narrowed excimer laser apparatus | |
| JP4900075B2 (en) | Excimer lamp | |
| JP2003163407A (en) | Optical semiconductor device | |
| CN107076892B (en) | The regeneration method of grating, the manufacturing method of grating and grating | |
| CA2043512A1 (en) | Gas laser apparatus | |
| JP2569700B2 (en) | Optical element for laser | |
| JP4007708B2 (en) | Vacuum ultraviolet laser | |
| JPH04340283A (en) | Container and holder for etalon | |
| JPH0461181A (en) | Etalon | |
| KR20020019121A (en) | Exposing method and apparatus | |
| JPH09124400A (en) | Production of coaxial crystal conjugate integrated through chemically bonding synthetic single crystal bodies identical in main component and crystal system with each other | |
| JP5943960B2 (en) | Polarizing beam splitter, phase plate and bandpass filter | |
| CA2409176A1 (en) | Microetalon for dwdm telecommunications applications | |
| JPH10284792A (en) | Laser light source, method and apparatus for exposure | |
| JPH10284410A (en) | Aligner and exposure | |
| JPH0428277A (en) | Excimer laser wavelength selection element | |
| JPH065952A (en) | Discharge-pumped type laser | |
| JPH03254165A (en) | Gas laser apparatus |