JPH03153879A - Substitution type electroless tin or solder plating method - Google Patents
Substitution type electroless tin or solder plating methodInfo
- Publication number
- JPH03153879A JPH03153879A JP29521689A JP29521689A JPH03153879A JP H03153879 A JPH03153879 A JP H03153879A JP 29521689 A JP29521689 A JP 29521689A JP 29521689 A JP29521689 A JP 29521689A JP H03153879 A JPH03153879 A JP H03153879A
- Authority
- JP
- Japan
- Prior art keywords
- plating
- solder
- type electroless
- substitution type
- oxidizing agent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000007747 plating Methods 0.000 title claims abstract description 86
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 title claims abstract description 28
- 229910000679 solder Inorganic materials 0.000 title claims abstract description 27
- 238000006467 substitution reaction Methods 0.000 title claims abstract description 12
- 238000000034 method Methods 0.000 title claims description 10
- 239000007800 oxidant agent Substances 0.000 claims abstract description 24
- 229910052802 copper Inorganic materials 0.000 claims abstract description 17
- 229910000881 Cu alloy Inorganic materials 0.000 claims abstract description 13
- 150000003839 salts Chemical class 0.000 claims abstract description 10
- 150000002978 peroxides Chemical class 0.000 claims abstract description 3
- 238000006073 displacement reaction Methods 0.000 claims description 29
- 239000007864 aqueous solution Substances 0.000 claims description 22
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 14
- 239000010949 copper Substances 0.000 claims description 14
- 239000002253 acid Substances 0.000 claims description 7
- 150000002828 nitro derivatives Chemical class 0.000 claims description 2
- UMGDCJDMYOKAJW-UHFFFAOYSA-N thiourea Chemical compound NC(N)=S UMGDCJDMYOKAJW-UHFFFAOYSA-N 0.000 abstract description 12
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 abstract description 8
- -1 H2O2 Chemical class 0.000 abstract description 6
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Natural products NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 abstract description 6
- 239000000956 alloy Substances 0.000 abstract description 5
- 239000000463 material Substances 0.000 abstract description 4
- XXQBEVHPUKOQEO-UHFFFAOYSA-N potassium superoxide Chemical compound [K+].[K+].[O-][O-] XXQBEVHPUKOQEO-UHFFFAOYSA-N 0.000 abstract description 4
- 229910001870 ammonium persulfate Inorganic materials 0.000 abstract description 2
- 238000007772 electroless plating Methods 0.000 abstract description 2
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 abstract description 2
- CHQMHPLRPQMAMX-UHFFFAOYSA-L sodium persulfate Chemical compound [Na+].[Na+].[O-]S(=O)(=O)OOS([O-])(=O)=O CHQMHPLRPQMAMX-UHFFFAOYSA-L 0.000 abstract description 2
- LJRGBERXYNQPJI-UHFFFAOYSA-M sodium;3-nitrobenzenesulfonate Chemical compound [Na+].[O-][N+](=O)C1=CC=CC(S([O-])(=O)=O)=C1 LJRGBERXYNQPJI-UHFFFAOYSA-M 0.000 abstract description 2
- 239000007788 liquid Substances 0.000 abstract 2
- 229910004882 Na2S2O8 Inorganic materials 0.000 abstract 1
- 235000019395 ammonium persulphate Nutrition 0.000 abstract 1
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 abstract 1
- 150000004965 peroxy acids Chemical class 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 7
- 239000011734 sodium Substances 0.000 description 7
- 229910052708 sodium Inorganic materials 0.000 description 7
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 6
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 6
- 229910021626 Tin(II) chloride Inorganic materials 0.000 description 4
- 238000001556 precipitation Methods 0.000 description 4
- TXUICONDJPYNPY-UHFFFAOYSA-N (1,10,13-trimethyl-3-oxo-4,5,6,7,8,9,11,12,14,15,16,17-dodecahydrocyclopenta[a]phenanthren-17-yl) heptanoate Chemical compound C1CC2CC(=O)C=C(C)C2(C)C2C1C1CCC(OC(=O)CCCCCC)C1(C)CC2 TXUICONDJPYNPY-UHFFFAOYSA-N 0.000 description 3
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 239000002736 nonionic surfactant Substances 0.000 description 3
- 239000001119 stannous chloride Substances 0.000 description 3
- 235000011150 stannous chloride Nutrition 0.000 description 3
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- AFVFQIVMOAPDHO-UHFFFAOYSA-N Methanesulfonic acid Chemical compound CS(O)(=O)=O AFVFQIVMOAPDHO-UHFFFAOYSA-N 0.000 description 2
- 150000007513 acids Chemical class 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 238000005238 degreasing Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- HWSZZLVAJGOAAY-UHFFFAOYSA-L lead(II) chloride Chemical compound Cl[Pb]Cl HWSZZLVAJGOAAY-UHFFFAOYSA-L 0.000 description 2
- 229910021645 metal ion Inorganic materials 0.000 description 2
- 150000007524 organic acids Chemical class 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- WHOZNOZYMBRCBL-OUKQBFOZSA-N (2E)-2-Tetradecenal Chemical compound CCCCCCCCCCC\C=C\C=O WHOZNOZYMBRCBL-OUKQBFOZSA-N 0.000 description 1
- FLKHMTSGHUOTCE-UHFFFAOYSA-N (3-nitrophenyl)methanesulfonic acid Chemical compound OS(=O)(=O)CC1=CC=CC([N+]([O-])=O)=C1 FLKHMTSGHUOTCE-UHFFFAOYSA-N 0.000 description 1
- BJEPYKJPYRNKOW-REOHCLBHSA-N (S)-malic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O BJEPYKJPYRNKOW-REOHCLBHSA-N 0.000 description 1
- LCPVQAHEFVXVKT-UHFFFAOYSA-N 2-(2,4-difluorophenoxy)pyridin-3-amine Chemical compound NC1=CC=CN=C1OC1=CC=C(F)C=C1F LCPVQAHEFVXVKT-UHFFFAOYSA-N 0.000 description 1
- KFIRODWJCYBBHY-UHFFFAOYSA-N 3-nitrophthalic acid Chemical compound OC(=O)C1=CC=CC([N+]([O-])=O)=C1C(O)=O KFIRODWJCYBBHY-UHFFFAOYSA-N 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- 229910001369 Brass Inorganic materials 0.000 description 1
- 239000004343 Calcium peroxide Substances 0.000 description 1
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 description 1
- 239000002202 Polyethylene glycol Substances 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 description 1
- QPYSSKMDOKYBLP-UHFFFAOYSA-M [N+](=O)([O-])C(C(=O)[O-])C.[Na+] Chemical compound [N+](=O)([O-])C(C(=O)[O-])C.[Na+] QPYSSKMDOKYBLP-UHFFFAOYSA-M 0.000 description 1
- ZCZZMZJELJAGKX-UHFFFAOYSA-M [Na+].[N+](=O)([O-])C1=C(C2=CC=CC=C2C=C1)S(=O)(=O)[O-] Chemical compound [Na+].[N+](=O)([O-])C1=C(C2=CC=CC=C2C=C1)S(=O)(=O)[O-] ZCZZMZJELJAGKX-UHFFFAOYSA-M 0.000 description 1
- DHAPBBRAEUWRSY-UHFFFAOYSA-J [Sn+4].OCC([O-])=O.OCC([O-])=O.OCC([O-])=O.OCC([O-])=O Chemical compound [Sn+4].OCC([O-])=O.OCC([O-])=O.OCC([O-])=O.OCC([O-])=O DHAPBBRAEUWRSY-UHFFFAOYSA-J 0.000 description 1
- BJEPYKJPYRNKOW-UHFFFAOYSA-N alpha-hydroxysuccinic acid Natural products OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 description 1
- ROOXNKNUYICQNP-UHFFFAOYSA-N ammonium peroxydisulfate Substances [NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O ROOXNKNUYICQNP-UHFFFAOYSA-N 0.000 description 1
- VAZSKTXWXKYQJF-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)OOS([O-])=O VAZSKTXWXKYQJF-UHFFFAOYSA-N 0.000 description 1
- HOQPTLCRWVZIQZ-UHFFFAOYSA-H bis[[2-(5-hydroxy-4,7-dioxo-1,3,2$l^{2}-dioxaplumbepan-5-yl)acetyl]oxy]lead Chemical compound [Pb+2].[Pb+2].[Pb+2].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O.[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O HOQPTLCRWVZIQZ-UHFFFAOYSA-H 0.000 description 1
- 239000010951 brass Substances 0.000 description 1
- LHJQIRIGXXHNLA-UHFFFAOYSA-N calcium peroxide Chemical compound [Ca+2].[O-][O-] LHJQIRIGXXHNLA-UHFFFAOYSA-N 0.000 description 1
- 235000019402 calcium peroxide Nutrition 0.000 description 1
- 239000002738 chelating agent Substances 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- HGCIXCUEYOPUTN-UHFFFAOYSA-N cis-cyclohexene Natural products C1CCC=CC1 HGCIXCUEYOPUTN-UHFFFAOYSA-N 0.000 description 1
- 235000015165 citric acid Nutrition 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000013527 degreasing agent Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- PNOXNTGLSKTMQO-UHFFFAOYSA-L diacetyloxytin Chemical compound CC(=O)O[Sn]OC(C)=O PNOXNTGLSKTMQO-UHFFFAOYSA-L 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- PEYVWSJAZONVQK-UHFFFAOYSA-N hydroperoxy(oxo)borane Chemical compound OOB=O PEYVWSJAZONVQK-UHFFFAOYSA-N 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 229910052500 inorganic mineral Inorganic materials 0.000 description 1
- 229940046892 lead acetate Drugs 0.000 description 1
- 150000002611 lead compounds Chemical class 0.000 description 1
- RLJMLMKIBZAXJO-UHFFFAOYSA-N lead nitrate Chemical compound [O-][N+](=O)O[Pb]O[N+]([O-])=O RLJMLMKIBZAXJO-UHFFFAOYSA-N 0.000 description 1
- LLABTCPIBSAMGS-UHFFFAOYSA-L lead(2+);methanesulfonate Chemical compound [Pb+2].CS([O-])(=O)=O.CS([O-])(=O)=O LLABTCPIBSAMGS-UHFFFAOYSA-L 0.000 description 1
- 239000001630 malic acid Substances 0.000 description 1
- 235000011090 malic acid Nutrition 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229940098779 methanesulfonic acid Drugs 0.000 description 1
- 239000011707 mineral Substances 0.000 description 1
- GSGDTSDELPUTKU-UHFFFAOYSA-N nonoxybenzene Chemical compound CCCCCCCCCOC1=CC=CC=C1 GSGDTSDELPUTKU-UHFFFAOYSA-N 0.000 description 1
- 235000005985 organic acids Nutrition 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229940044654 phenolsulfonic acid Drugs 0.000 description 1
- ACVYVLVWPXVTIT-UHFFFAOYSA-N phosphinic acid Chemical compound O[PH2]=O ACVYVLVWPXVTIT-UHFFFAOYSA-N 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000027756 respiratory electron transport chain Effects 0.000 description 1
- PFUVRDFDKPNGAV-UHFFFAOYSA-N sodium peroxide Chemical compound [Na+].[Na+].[O-][O-] PFUVRDFDKPNGAV-UHFFFAOYSA-N 0.000 description 1
- HHGDLPTYJQQMKT-UHFFFAOYSA-M sodium;4-nitrobenzenesulfonate Chemical compound [Na+].[O-][N+](=O)C1=CC=C(S([O-])(=O)=O)C=C1 HHGDLPTYJQQMKT-UHFFFAOYSA-M 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- RCIVOBGSMSSVTR-UHFFFAOYSA-L stannous sulfate Chemical compound [SnH2+2].[O-]S([O-])(=O)=O RCIVOBGSMSSVTR-UHFFFAOYSA-L 0.000 description 1
- IIACRCGMVDHOTQ-UHFFFAOYSA-M sulfamate Chemical compound NS([O-])(=O)=O IIACRCGMVDHOTQ-UHFFFAOYSA-M 0.000 description 1
- 150000003464 sulfur compounds Chemical class 0.000 description 1
- 235000002906 tartaric acid Nutrition 0.000 description 1
- 239000011975 tartaric acid Substances 0.000 description 1
- 150000003606 tin compounds Chemical class 0.000 description 1
- 229910000375 tin(II) sulfate Inorganic materials 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Landscapes
- Chemically Coating (AREA)
- Manufacturing Of Printed Wiring (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、置換型無電解錫又は半田めっき方法に関する
。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a displacement type electroless tin or solder plating method.
近年、プリント配線板では、表面実装が適用され、半田
めっき層又は錫めっき層が必要となってきたが、独立回
路基板の増加や配線回路のファインパターン化等で、電
気めっきでは対応できなくなり、無電解錫めっき又は無
電解半田めっきを適用するケースが増えてきた。In recent years, surface mounting has been applied to printed wiring boards, requiring a solder plating layer or a tin plating layer, but with the increase in the number of independent circuit boards and the fine patterning of wiring circuits, electroplating can no longer be used. The number of cases in which electroless tin plating or electroless solder plating is applied is increasing.
銅又は銅合金の防錆や半田付は性の向上を目的とする場
合、錫めっき又は半田めっきの膜厚は少なくとも0.5
μm以上必要であり、実用上は1μm以上であることが
好ましい。When the purpose of rust prevention or soldering of copper or copper alloy is to improve properties, the film thickness of tin plating or solder plating should be at least 0.5
The thickness is required to be 1 μm or more, and in practice, it is preferably 1 μm or more.
従来より、無電解錫又は半田めっき浴として、第1錫塩
とチオ尿素を主成分とする錫めっき浴、第1錫塩、鉛塩
及びチオ尿素を主成分とする半田めっき浴等の置換型め
っき浴と、これらの置換型めっき浴にヒドラジンや次亜
リン酸等の還元剤を添加した自己触媒型めっき浴とが知
られれている。Conventionally, substitution type electroless tin or solder plating baths have been used, such as tin plating baths containing stannous salts and thiourea as main components, and solder plating baths containing stannous salts, lead salts, and thiourea as main components. There are known plating baths and autocatalytic plating baths in which a reducing agent such as hydrazine or hypophosphorous acid is added to these displacement plating baths.
自己触媒型めっき浴では、急激な金属の析出現象、所謂
浴分解を防止するため、通常浴中の各成分濃度を低くす
る必要がある。このためめっき皮膜の析出速度が遅く、
1μm以上のめっき膜厚を3〜5分程度の短時間で得る
ことは出来ない。また、高膜厚のめっき皮膜を得るため
に長時間のめっきを行うと、不必要な部分へめっきが析
出し、特にパターンめっきの場合、パターン外にめっき
が析出する等の問題点がある。In autocatalytic plating baths, it is usually necessary to reduce the concentration of each component in the bath in order to prevent rapid metal precipitation, so-called bath decomposition. For this reason, the deposition rate of the plating film is slow,
It is not possible to obtain a plating film thickness of 1 μm or more in a short period of about 3 to 5 minutes. Furthermore, when plating is carried out for a long time to obtain a plated film with a high film thickness, there are problems such as the plating depositing on unnecessary parts, and especially in the case of pattern plating, the plating depositing outside the pattern.
一方、置換型めっき浴では、不必要な部分へめっきが析
出することはないが、置換により析出した錫又は半田が
、銅又は銅合金素材の表面全体を被覆した時点で析出が
ストップするため、0.2〜0.5μm程度以上のめっ
き膜厚が得られないという問題点がある。On the other hand, in displacement-type plating baths, plating does not precipitate on unnecessary areas, but the tin or solder deposited by displacement stops when the entire surface of the copper or copper alloy material is covered. There is a problem that a plating film thickness of about 0.2 to 0.5 μm or more cannot be obtained.
問題点を解決するための手段
本発明者は、上記した如き問題点を解決すべく、鋭意研
究を重ねてきた。その結果、銅又は銅合金からなる被処
理物に置換型めっき浴を用いて、めっき皮膜を形成する
場合には、酸化剤を含有する水溶液を用いて、被処理物
の表面を予め酸化した後、置換めっきを行なうことによ
って、短時間に厚い膜厚のめっき皮膜を形成できること
を見出した。Means for Solving the Problems The present inventor has conducted extensive research in order to solve the above-mentioned problems. As a result, when forming a plating film on a workpiece made of copper or copper alloy using a displacement plating bath, it is necessary to oxidize the surface of the workpiece in advance using an aqueous solution containing an oxidizing agent. discovered that a thick plating film can be formed in a short period of time by displacement plating.
即ち、本発明は、pH1〜13の酸化剤含有水溶液を用
いて、被めっき物である銅又は銅合金を処理した後、置
換型無電解錫めっき又は置換型無電解半田めっきを行な
うことを特徴とする置換型無電解錫又は半田めっき方法
に係る。That is, the present invention is characterized in that after the copper or copper alloy to be plated is treated with an oxidizing agent-containing aqueous solution having a pH of 1 to 13, displacement type electroless tin plating or displacement type electroless solder plating is performed. This invention relates to a substitution type electroless tin or solder plating method.
一般に置換型めっき浴における金属の析出反応は次式の
様に表わすことができる。Generally, the metal precipitation reaction in a displacement plating bath can be expressed as shown in the following equation.
局部カソード反応 A6→A”+ne−(溶解反応)
局部アノード反応 B”+ne−→B″(析出反応)
ここでAは素材金属でB″+は浴中の金属イオンである
。Local cathode reaction A6→A”+ne- (dissolution reaction)
Local anodic reaction B"+ne-→B" (precipitation reaction)
Here, A is the raw metal and B″+ is the metal ion in the bath.
即ち、局部カソード反応により素材金属がめつき浴中に
溶解するときに放出する電子が、局部アノード反応に示
す如くめっき浴中の金属イオンに移動し、めっき皮膜が
析出する。そのため、素材金属の溶解の容易さが置換反
応に大きく影響する。That is, electrons released when the raw metal is dissolved in the plating bath due to the local cathode reaction move to metal ions in the plating bath as shown in the local anode reaction, and a plating film is deposited. Therefore, the ease with which the raw metal can be dissolved greatly affects the substitution reaction.
通常、このような置換めっき方法では、被処理物の脱脂
及び酸処理を行なった後、置換めっき浴に被処理物を浸
漬して金属を析出させる方法が行なわれており、錫又は
半田が被処理物の表面全体を被覆した時点で金属の析出
がストップするため、めっき膜厚は、0.2〜0.5μ
m程度が限度である。Usually, in such a displacement plating method, the workpiece is degreased and treated with acid, and then the workpiece is immersed in a displacement plating bath to deposit the metal. Since metal precipitation stops when the entire surface of the treated object is coated, the plating film thickness should be 0.2 to 0.5μ.
The limit is about m.
これに対して、本発明によれば、脱脂等により、被処理
物を洗浄した後、酸化剤含有水溶液に被処理物を浸漬し
、次いで置換めっき浴に浸漬するという方法によって、
1μm程度又はこれを上回る膜厚の置換めっき皮膜を短
時間で形成することができる。この様に本発明方法によ
って短時間で高膜厚の置換めっきが可能となる理由は、
銅又は銅合金素材を酸化剤含有水溶液に浸漬することに
よって、銅又は銅合金表面に酸化物が形成され、このよ
うな酸化物は電子の移動が起こりやすく、置換型めっき
浴中で素材金属の溶解が容易となり、その結果錫又は半
田が析出し易くなるからであると考えられる。On the other hand, according to the present invention, after cleaning the workpiece by degreasing or the like, the workpiece is immersed in an oxidizing agent-containing aqueous solution, and then immersed in a displacement plating bath.
A displacement plating film with a thickness of about 1 μm or more can be formed in a short time. The reason why the method of the present invention enables displacement plating with a high film thickness in a short time is as follows.
By immersing a copper or copper alloy material in an oxidizing agent-containing aqueous solution, oxides are formed on the surface of the copper or copper alloy. Such oxides tend to undergo electron transfer, and the material metal is not easily immersed in the displacement plating bath. This is believed to be because melting becomes easier, and as a result, tin or solder becomes easier to precipitate.
本発明方法が適用される被処理物は、銅、又は黄銅等の
銅合金であり、その形状は特に限定はされない。The object to be treated to which the method of the present invention is applied is copper or a copper alloy such as brass, and its shape is not particularly limited.
本発明方法では、まず、銅又は銅合金材料に対して、常
法に従って、脱脂等の洗浄処理を行なう。In the method of the present invention, first, the copper or copper alloy material is subjected to a cleaning treatment such as degreasing according to a conventional method.
次いで、この材料を酸化剤含有水溶液により処理する。This material is then treated with an aqueous solution containing an oxidizing agent.
酸化剤としては、例えば、過酸化水素、過酸化ナトリウ
ム、過酸化カリウム、過酸化カルシウム、過酸化アンモ
ニウム、過酸化ジエチル、過酸化シクロヘキセン等の過
酸化物;過硫酸ナトリウム、過硫酸アンモニウム、過ホ
ウ酸ナトリウム、過ホウ酸アンモニウム、ベルオクソリ
ン酸ナトリウム、ベルオクソ炭酸ナトリウム、ペルオク
ソタングステン酸ナトリウム、ペルオクソ硝酸カリウム
等のベルオクソ酸塩;m−ニトロベンゼンスルホン酸ナ
トリウム、p−ニトロベンゼンスルホン酸ナトリウム、
m−ニトロトルエンスルホン酸ナトリウム、ニトロアニ
ル酸、0−ニトロ安息香酸ナトリウム、m−ニトロフタ
ル酸ナトリウム、ニトロナフタレンスルホン酸ナトリウ
ム、ニトロプロピオン酸ナトリウム等の有機ニトロ化合
物等を用いることができる。Examples of oxidizing agents include peroxides such as hydrogen peroxide, sodium peroxide, potassium peroxide, calcium peroxide, ammonium peroxide, diethyl peroxide, and cyclohexene peroxide; sodium persulfate, ammonium persulfate, and perboric acid. Beroxo salts such as sodium, ammonium perborate, sodium beloxophosphate, sodium beloxocarbonate, sodium peroxotungstate, potassium peroxonitrate; sodium m-nitrobenzenesulfonate, sodium p-nitrobenzenesulfonate;
Organic nitro compounds such as sodium m-nitrotoluenesulfonate, nitroanilic acid, sodium 0-nitrobenzoate, sodium m-nitrophthalate, sodium nitronaphthalenesulfonate, and sodium nitropropionate can be used.
本発明では、上記した酸化剤の少なくとも1種を使用す
ればよいが、2種以上を併用してもさしつかえない。酸
化剤含有水溶液における酸化剤の濃度は、0.01〜2
.0moN/N程度の範囲でその効果は認められるが、
望ましくは0.1〜1.0moN/lとする。酸化剤の
濃度が低すぎる場合には、銅系素材の酸化に要する時間
が長くなり好ましくない。また酸化剤濃度が高くなると
性能上問題は無いが、生産コストが高くなる。酸化剤含
有水溶液は、pH1〜13で使用可能であるが、望まし
くは、pH2〜9とする。pHが低すぎる場合には、素
材の銅又は銅合金がエツチングされ、めっき外観が粗雑
となり、ムラが発生するので好ましくない。又、pHが
高すぎる場合には、酸化剤の自己分解が激しく、コスト
高となるため好ましくない。In the present invention, at least one of the above-mentioned oxidizing agents may be used, but two or more types may be used in combination. The concentration of the oxidizing agent in the oxidizing agent-containing aqueous solution is 0.01 to 2
.. Although the effect is recognized in the range of about 0moN/N,
It is preferably 0.1 to 1.0 moN/l. If the concentration of the oxidizing agent is too low, the time required to oxidize the copper-based material becomes undesirable. Moreover, if the oxidizing agent concentration becomes high, there is no problem in terms of performance, but the production cost increases. The oxidizing agent-containing aqueous solution can be used at a pH of 1 to 13, but preferably at a pH of 2 to 9. If the pH is too low, the copper or copper alloy material will be etched, making the plating appearance rough and uneven, which is not preferable. Furthermore, if the pH is too high, the oxidizing agent will undergo severe self-decomposition, resulting in high costs, which is not preferable.
酸化剤含有水溶液による処理は、通常、該水溶液中に被
処理物を浸漬することにより行なわれる。Treatment with an oxidizing agent-containing aqueous solution is usually performed by immersing the object to be treated in the aqueous solution.
該水溶液の液温は室温〜80℃程度が適当であり、作業
性等からは30〜50℃程度が好ましい。処理時間は、
通常3〜10分程度とすればよい。The temperature of the aqueous solution is suitably from room temperature to about 80°C, and preferably from about 30 to 50°C from the viewpoint of workability. The processing time is
Usually, the time may be about 3 to 10 minutes.
酸化剤含有水溶液による処理を行なった後、置換錫又は
半田めっきを行なう。めっき浴としては、公知の置換型
無電解錫めっき浴又は置換型無電解半田めっき浴をいず
れも用いることができる。このような置換型無電解めっ
き浴としては、例えば、硫酸第1錫、塩化第1錫、硼弗
化第1錫のような無機第1錫塩、メタンスルホン酸第1
錫などのアルカノールスルホン酸第1錫、酢酸第1錫、
ヒドロキシ酢酸第1錫などの有機酸第1錫塩のような有
機第1錫塩等の錫化合物を10〜80g/4程度、塩酸
、硫酸、硼弗化水素酸のような鉱酸、酢酸、フェノール
スルホン酸のような有機酸等の酸類を10〜150g/
l程度、チオ尿素又はその誘導体などのイオウ化合物を
30〜300g/R程度含有し、更に必要に応じて、析
出皮膜の改良剤として酒石酸、クエン酸、リンゴ酸など
のキレート剤を10〜100g/l程度、ポリエチレン
グリコールノニルフェニルエーテルなどのノニオン性界
面活性剤を0.2〜5g、Q程度含有する置換型無電解
錫めっき浴、このような錫めっき浴に、更に、塩化鉛、
硝酸鉛、硼弗化鉛のような無機船塩、酢酸鉛、スルファ
ミン酸鉛、クエン酸鉛、メタンスルホン酸鉛のような有
機酸鉛等の鉛化合物を5〜50g/47程度添加した置
換型無電解半田めっき浴等を示すことができる。After treatment with an oxidizing agent-containing aqueous solution, displacement tin or solder plating is performed. As the plating bath, any known displacement type electroless tin plating bath or displacement type electroless solder plating bath can be used. Examples of such displacement type electroless plating baths include inorganic stannous salts such as stannous sulfate, stannous chloride, stannous borofluoride, and stannous methanesulfonic acid.
stannous alkanolsulfonic acids such as tin, stannous acetate,
Approximately 10 to 80 g/4 of a tin compound such as an organic acid tin salt such as tin hydroxyacetate, a mineral acid such as hydrochloric acid, sulfuric acid, or borohydrofluoric acid, acetic acid, 10 to 150 g of acids such as organic acids such as phenolsulfonic acid
It contains about 30 to 300 g/R of a sulfur compound such as thiourea or its derivatives, and if necessary, 10 to 100 g/R of a chelating agent such as tartaric acid, citric acid, or malic acid as a deposited film improver. A displacement-type electroless tin plating bath containing about 0.2 to 5 g of a nonionic surfactant such as polyethylene glycol nonylphenyl ether and about Q, and to such a tin plating bath, lead chloride,
Substitution type with the addition of lead compounds such as inorganic marine salts such as lead nitrate and lead borofluoride, and organic acid lead such as lead acetate, lead sulfamate, lead citrate, and lead methanesulfonate at approximately 5 to 50 g/47. It can refer to electroless solder plating baths, etc.
置換めっきの条件は常法に従えばよく、通常は所望の厚
さのめっき皮膜が析出するまで、めっき浴中に被処理物
を浸漬すればよく、一般に、20〜70℃程度の液温で
1〜30分間程度めっきを行なえばよい。Conditions for displacement plating can be according to conventional methods. Usually, the object to be treated is immersed in a plating bath until a plating film of the desired thickness is deposited. Plating may be performed for about 1 to 30 minutes.
発明の効果
本発明方法によれば、短時間で厚い膜厚の錫めっき皮膜
又は半田めっき皮膜を形成することができ、しかも高精
度のめっきパターンを形成することが可能である。Effects of the Invention According to the method of the present invention, it is possible to form a thick tin plating film or a solder plating film in a short time, and it is also possible to form a highly accurate plating pattern.
実施例 以下、実施例を示して本発明を更に詳細に説明する。Example Hereinafter, the present invention will be explained in more detail by showing examples.
実施例1
5X10cmの銅板をアルカリ脱脂剤(商標、エースク
リーンA220、奥野製薬工業■)50g/l水溶液に
、60℃で5分間浸漬して、銅板の脱脂を行なった。次
いで、水洗後、50℃の35%過酸化水素水50−/f
I水溶液に5分間浸漬した後、水洗し、置換めっきを行
なった。Example 1 A 5×10 cm copper plate was immersed in a 50 g/l aqueous solution of an alkaline degreaser (trademark, A-clean A220, Okuno Pharmaceutical Co., Ltd.) at 60° C. for 5 minutes to degrease the copper plate. Then, after washing with water, 50°C 35% hydrogen peroxide solution 50-/f
After being immersed in I aqueous solution for 5 minutes, it was washed with water and displacement plating was performed.
めっき浴としては、塩化第1錫30g/fl、チオ尿素
100g/N、塩酸50mt’/R及びノニオン界面活
性剤1g/47を含有する置換型錫めっき浴を用いた。As a plating bath, a displacement type tin plating bath containing 30 g/fl of stannous chloride, 100 g/N of thiourea, 50 mt'/R of hydrochloric acid, and 1 g/47 of a nonionic surfactant was used.
50℃の浴中に2分間浸漬することによって、膜厚1.
1μmの錫めっき皮膜が形成された。By immersing in a 50°C bath for 2 minutes, the film thickness was reduced to 1.
A tin plating film of 1 μm was formed.
また、上記した置換型錫めっき浴に代えて、塩化第1錫
20g/I)、塩化鉛15g/j7、塩酸50−/Ω、
チオ尿素80g/Ω及びノニオン系界面活性剤1g/ρ
を含有する置換型半田めっき浴を用いて同様の条件で2
分間置換めっきを行なったところ、膜厚1.3μmの半
田めっき皮膜が形成された。In addition, in place of the above-mentioned displacement type tin plating bath, stannous chloride 20g/I), lead chloride 15g/j7, hydrochloric acid 50-/Ω,
Thiourea 80g/Ω and nonionic surfactant 1g/ρ
2 under the same conditions using a displacement type solder plating bath containing
When displacement plating was performed for a minute, a solder plating film with a film thickness of 1.3 μm was formed.
上記した錫めっき皮膜及び半田めっき皮膜は、いずれも
緻密で、銅板との密着も良好であった。Both the tin plating film and the solder plating film described above were dense and had good adhesion to the copper plate.
比較例1
過酸化水素水溶液への浸漬処理に代えて、98%硫酸1
00m1/、Q水溶液に25℃で2分間浸漬すること以
外は、実施例1と同様にして、置換錫めっき及び置換半
田めっきを行なった。その結果、錫めっき皮膜の膜厚は
0.1μm1半田めっき皮膜の膜厚は0.3μmであり
、非常に薄いめっき皮膜が形成されただけであった。Comparative Example 1 Instead of immersion treatment in hydrogen peroxide aqueous solution, 98% sulfuric acid 1
Displacement tin plating and displacement solder plating were performed in the same manner as in Example 1, except that the sample was immersed in a 00ml/Q aqueous solution at 25° C. for 2 minutes. As a result, the film thickness of the tin plating film was 0.1 μm, and the film thickness of the solder plating film was 0.3 μm, and only a very thin plating film was formed.
実施例2
実施例1で用いた過酸化水素水溶液に代えて、下記第1
表に示す酸化剤含有水溶液を用いて、実施例1と同様の
条件で置換錫めっき又は置換半田めっきを行なった。酸
化剤含有水溶液のpaは硫酸又は水酸化ナトリウムで調
整した。尚、比較として、酸化剤含有水溶液による処理
に代えて、酸化剤を含有することなくpHg整のみを行
なった水溶液を用いて、同様に処理を行なった場合につ
いても置換めっきを行なった。Example 2 In place of the hydrogen peroxide aqueous solution used in Example 1, the following
Substitution tin plating or substitution solder plating was performed under the same conditions as in Example 1 using the oxidizing agent-containing aqueous solution shown in the table. The pa of the oxidizing agent-containing aqueous solution was adjusted with sulfuric acid or sodium hydroxide. For comparison, displacement plating was also performed in the case where the same treatment was performed using an aqueous solution containing no oxidizing agent and only adjusting the pHg, instead of the treatment with an oxidizing agent-containing aqueous solution.
形成されためっき皮膜の膜厚及びめっき外観を第1表に
示す。Table 1 shows the thickness and appearance of the formed plating film.
Claims (2)
っき物である銅又は銅合金を処理した後、置換型無電解
錫めっき又は置換型無電解半田めっきを行なうことを特
徴とする置換型無電解錫又は半田めっき方法。(1) Substitution characterized by treating the copper or copper alloy to be plated with an oxidizing agent-containing aqueous solution having a pH of 1 to 13, and then performing displacement type electroless tin plating or displacement type electroless solder plating. Type electroless tin or solder plating method.
び有機ニトロ化合物から選ばれた少なくとも一種の酸化
剤を0.01〜2.0mol/l含有するものである請
求項1に記載のめっき方法。(2) The plating according to claim 1, wherein the oxidizing agent-containing aqueous solution contains 0.01 to 2.0 mol/l of at least one oxidizing agent selected from peroxides, peroxo acid salts, and organic nitro compounds. Method.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP29521689A JPH03153879A (en) | 1989-11-13 | 1989-11-13 | Substitution type electroless tin or solder plating method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP29521689A JPH03153879A (en) | 1989-11-13 | 1989-11-13 | Substitution type electroless tin or solder plating method |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH03153879A true JPH03153879A (en) | 1991-07-01 |
Family
ID=17817705
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP29521689A Pending JPH03153879A (en) | 1989-11-13 | 1989-11-13 | Substitution type electroless tin or solder plating method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH03153879A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6180179B1 (en) | 1997-06-02 | 2001-01-30 | Nihon Parkerizing Co., Ltd. | Displace deposition-plated and doping-modified metal material and process for producing same |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS575854A (en) * | 1980-06-12 | 1982-01-12 | Fuji Electric Co Ltd | Production of tin-plated article |
JPS59170251A (en) * | 1983-03-14 | 1984-09-26 | Matsushita Electric Ind Co Ltd | Manufacture of lead alloy material for lead storage battery |
-
1989
- 1989-11-13 JP JP29521689A patent/JPH03153879A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS575854A (en) * | 1980-06-12 | 1982-01-12 | Fuji Electric Co Ltd | Production of tin-plated article |
JPS59170251A (en) * | 1983-03-14 | 1984-09-26 | Matsushita Electric Ind Co Ltd | Manufacture of lead alloy material for lead storage battery |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6180179B1 (en) | 1997-06-02 | 2001-01-30 | Nihon Parkerizing Co., Ltd. | Displace deposition-plated and doping-modified metal material and process for producing same |
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