JPH03152964A - Resin sealed type semiconductor device lead frame - Google Patents

Resin sealed type semiconductor device lead frame

Info

Publication number
JPH03152964A
JPH03152964A JP29274189A JP29274189A JPH03152964A JP H03152964 A JPH03152964 A JP H03152964A JP 29274189 A JP29274189 A JP 29274189A JP 29274189 A JP29274189 A JP 29274189A JP H03152964 A JPH03152964 A JP H03152964A
Authority
JP
Japan
Prior art keywords
semiconductor device
resin
tie bar
lead
lead frame
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP29274189A
Other languages
Japanese (ja)
Inventor
Hideyuki Nishikawa
秀幸 西川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP29274189A priority Critical patent/JPH03152964A/en
Publication of JPH03152964A publication Critical patent/JPH03152964A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To prevent an electric short circuit due to the deformation of an inner lead so as to improve a semiconductor device in yield by a method wherein a part of the inner lead, which is located inside a tie bar and comes into contact with a resin sealing mold when the semiconductor device is sealed up with resin, is formed smaller than the tie bar in thickness. CONSTITUTION:A groove 10 is provided to the underside of a part of an inner lead 3 which is located inside a tie bar 9 and comes into contact with a resin sealing mold 7 to make the part concerned smaller than the tie bar 9 in thickness. When a semiconductor device is manufactured using the lead frame formed as above, even if a foreign object such as sealing resin or the like is attached to the clamping face of the mold 7, a force applied to the lead 3 inside the tie bar 9 is small at clamping, so that the lead 3 is prevented from being deformed. Therefore, an electric short circuit due to the deformation of an inner lead can be restrained, in result a semiconductor device can be improved in yield.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は樹脂封止型半導体装置用リードフレームに関す
る。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a lead frame for a resin-sealed semiconductor device.

〔従来の技術〕[Conventional technology]

従来、樹脂封止型半導体装置は、第4図に示すように、
リードフレームの素子搭載部1に半導体素子2を搭載し
、半導体素子2と内部リード3とを金属細線4で接続し
、素子搭載部1の周囲を封止樹脂5で封止し、その後、
外部リード6を成形して完成するものである。
Conventionally, resin-sealed semiconductor devices, as shown in FIG.
The semiconductor element 2 is mounted on the element mounting part 1 of the lead frame, the semiconductor element 2 and the internal leads 3 are connected with a thin metal wire 4, the periphery of the element mounting part 1 is sealed with a sealing resin 5, and then,
This is completed by molding the external leads 6.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

上述した従来の技術では、内部リードの細いリードフレ
ームを用いて半導体装置を製造する場合に、以下のよう
な問題点がある。
The conventional technology described above has the following problems when manufacturing a semiconductor device using a lead frame with thin internal leads.

第5図において、半導体素子2の一辺5IIIllに対
し、接続すべき内部リード3が50本あるとすれば、内
部リード先端の太さは単純計算で51500.1開でな
ければならない。このような細い内部リード3は、樹脂
封止金型によって型締めされたときに、変形してしまう
可能性が高い。すなわち、第6図に示すように、樹脂封
止金型7に肉眼ではわからないほどの微小な封止樹脂等
の異物8が付着している場合であっても、このように細
い内部リード3は影線めされることにより変形してしま
い、第7図に示すように内部リード3同士が接触してし
まうことがある。このような状態で封止樹脂注入のなさ
れた半導体装置は、電気的不良品になってしまう。
In FIG. 5, if there are 50 internal leads 3 to be connected to one side 5IIIll of the semiconductor element 2, the thickness of the tips of the internal leads must be 51500.1 mm by simple calculation. Such a thin internal lead 3 is highly likely to be deformed when it is clamped by a resin sealing mold. That is, as shown in FIG. 6, even if the resin molding die 7 has foreign matter 8 such as molding resin so minute that it cannot be seen with the naked eye, such thin internal leads 3 The inner leads 3 may be deformed due to shadowing, and the inner leads 3 may come into contact with each other as shown in FIG. A semiconductor device in which sealing resin is injected in such a state becomes an electrically defective product.

以上のように、従来技術においては、細い内部リードを
持つ半導体装置を製造する場合に、内部リード間ショー
トによる不良品の発生する危険性がきわめて高いという
問題がある。
As described above, in the conventional technology, when manufacturing a semiconductor device having thin internal leads, there is a problem in that there is an extremely high risk of producing defective products due to short-circuits between internal leads.

本発明の目的は、リード間ショートによる不良品の発生
のない樹脂封止型半導体装置用リードフレームを提供す
ることにある。
An object of the present invention is to provide a lead frame for a resin-sealed semiconductor device that does not produce defective products due to short circuits between leads.

〔課題を解決するための手段〕[Means to solve the problem]

本発明の樹脂封止型半導体装置用リードフレームは、タ
イバーより内側の内部リードのうちの少なくとも樹脂封
止の際に樹脂封止金型に接触する部分がタイバーの厚さ
よりも薄くなっている。
In the resin-sealed lead frame for a semiconductor device of the present invention, at least the portion of the internal lead inside the tie bar that contacts the resin sealing mold during resin sealing is thinner than the tie bar.

〔実施例〕〔Example〕

次に、本発明の実施例について図面を参照して説明する
Next, embodiments of the present invention will be described with reference to the drawings.

第1図は本発明の第1の実施例の部分平面図、第2図は
第1図のリードフレームを型締めしているときのA−A
′線断面図である。
FIG. 1 is a partial plan view of the first embodiment of the present invention, and FIG. 2 is a view taken along A-A when the lead frame in FIG. 1 is being clamped.
FIG.

第1の実施例は、第1図及び第2図に示すように、タイ
バー9より内側の内部リード3のうち、樹脂封止金型7
に接触する部分の下面にみぞ10があり、この部分の厚
さはタイバー9よりも薄くなっている。このみぞ10の
深さは50μmであるので、タイバー9の厚さを250
μmとすれば、この薄くなっている部分の内部リード3
の厚さは200μmとなる。
In the first embodiment, as shown in FIG. 1 and FIG.
There is a groove 10 on the lower surface of the part that contacts the tie bar 9, and the thickness of this part is thinner than the tie bar 9. Since the depth of this groove 10 is 50 μm, the thickness of the tie bar 9 is 250 μm.
If it is μm, then the internal lead 3 of this thinned part
The thickness is 200 μm.

このようなリードフレームを用いて、半導体装置を製造
する場合には、たとえ、樹脂封止金型7の型締め面に封
止樹脂等の異物が付着していても、型締めの際にタイバ
ー9より内側の内部リード3に加わる力は小さいので、
内部リード3が変形することがない。
When manufacturing semiconductor devices using such a lead frame, even if foreign matter such as sealing resin adheres to the clamping surface of the resin-sealed mold 7, the tie bars should be removed during mold clamping. Since the force applied to the internal lead 3 on the inside of 9 is small,
The internal leads 3 are not deformed.

第3図は本発明の第2の実施例のリードフレームを型締
めしているときの部分断面図である。
FIG. 3 is a partial sectional view of the lead frame according to the second embodiment of the present invention when the mold is being clamped.

第2の実施例は、第3図に示すように、第1の実施例と
は異なり、タイバー9より内側のリードのうち、樹脂封
止金型7に接触する部分の下面だけではなく、上面にも
みぞ10が設けられている。このみぞ10の深さは、上
面側、下面側いずれも50μmであるので、タイバー9
の厚さを250μmとすれば、この薄くなっている部分
の内部リード3の厚さは150μmとなる。
As shown in FIG. 3, the second embodiment differs from the first embodiment in that, of the leads inside the tie bar 9, not only the lower surface but also the upper surface of the portion that contacts the resin molding mold 7 is used. A groove 10 is provided on each side. The depth of this groove 10 is 50 μm on both the upper surface side and the lower surface side, so the tie bar 9
If the thickness of the internal lead 3 is 250 μm, the thickness of this thinned portion of the internal lead 3 is 150 μm.

このようにすると、樹脂封止金型7の下金型だけでなく
、上金型の型締め面に異物が付着している場合にも内部
リード3の変形をより効果的に防止できるという利点が
ある。
This has the advantage that deformation of the internal leads 3 can be more effectively prevented even when foreign matter is attached to the clamping surface of the upper mold as well as the lower mold of the resin sealing mold 7. There is.

〔発明の効果〕〔Effect of the invention〕

以上説明したように本発明は、タイバーより内側の内部
リードのうち、樹脂封止の際に少くとも樹脂封止金型と
接触する部分をタイバーの厚さより薄くすることにより
内部リードの変形による電気的ショートの発生を減少さ
せることができ、歩留りの向上がはかれるという効果が
ある。
As explained above, the present invention makes it possible to reduce the amount of electricity caused by deformation of the internal lead by making at least the part of the internal lead inside the tie bar that contacts the resin sealing mold thinner than the thickness of the tie bar during resin sealing. This has the effect of reducing the occurrence of target shorts and improving yield.

また、樹脂封止金型の型締め面に多少の異物が付着して
いても、内部リードの変形が起こらないので、従来に比
べ、封止金型の清掃を簡略化することができ、作業性が
向上するという効果もある。
In addition, even if some foreign matter adheres to the mold clamping surface of the resin sealing mold, the internal leads will not be deformed, making cleaning the sealing mold simpler and easier than before. It also has the effect of improving sex.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の第1の実施例の部分断面図、第2図は
第1図のリードフレームを型締めしているときのl−A
′線断面図、第3図は本発明の第2の実施例のリードフ
レームを型締めしているときの部分断面図、第4図は従
来の樹脂封止型半導体装置の一例の断面図、第5図は従
来の内部リードの問題点を説明するための部分平面図、
第6図は従来のリードフレームを型締めしているときの
問題点を説明するための部分断面図、第7図は従来の内
部リードの変形の一例を説明するための部分平面図であ
る。 1・・・素子搭載部、2・・・半導体素子、3・・・内
部リード、4・・・金属細線、5・・・封止樹脂、6・
・・外部リード、7・・・樹脂封止金型、8・・・異物
、9・・・タイバ10・・・みぞ。
FIG. 1 is a partial cross-sectional view of the first embodiment of the present invention, and FIG. 2 is a view showing l-A when the lead frame of FIG.
3 is a partial sectional view when the lead frame of the second embodiment of the present invention is being clamped, and FIG. 4 is a sectional view of an example of a conventional resin-sealed semiconductor device. FIG. 5 is a partial plan view for explaining the problems of the conventional internal lead.
FIG. 6 is a partial cross-sectional view for explaining problems when mold-clamping a conventional lead frame, and FIG. 7 is a partial plan view for explaining an example of modification of the conventional internal lead. DESCRIPTION OF SYMBOLS 1... Element mounting part, 2... Semiconductor element, 3... Internal lead, 4... Metal thin wire, 5... Sealing resin, 6...
... External lead, 7... Resin sealing mold, 8... Foreign matter, 9... Tie bar 10... Groove.

Claims (1)

【特許請求の範囲】[Claims]  タイバーより内側の内部リードのうちの少なくとも樹
脂封止の際に樹脂封止金型に接触する部分がタイバーの
厚さよりも薄くなっていることを特徴とする樹脂封止型
半導体装置用リードフレーム。
A lead frame for a resin-sealed semiconductor device, characterized in that at least a portion of the internal leads inside the tie-bar that contacts a resin-sealing mold during resin-sealing is thinner than the thickness of the tie-bar.
JP29274189A 1989-11-09 1989-11-09 Resin sealed type semiconductor device lead frame Pending JPH03152964A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP29274189A JPH03152964A (en) 1989-11-09 1989-11-09 Resin sealed type semiconductor device lead frame

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP29274189A JPH03152964A (en) 1989-11-09 1989-11-09 Resin sealed type semiconductor device lead frame

Publications (1)

Publication Number Publication Date
JPH03152964A true JPH03152964A (en) 1991-06-28

Family

ID=17785726

Family Applications (1)

Application Number Title Priority Date Filing Date
JP29274189A Pending JPH03152964A (en) 1989-11-09 1989-11-09 Resin sealed type semiconductor device lead frame

Country Status (1)

Country Link
JP (1) JPH03152964A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6645792B2 (en) 2001-06-27 2003-11-11 Matsushita Electric Industrial Co., Ltd. Lead frame and method for fabricating resin-encapsulated semiconductor device
EP3451378A1 (en) * 2017-08-31 2019-03-06 NXP USA, Inc. Packaged semiconductor device and method for forming

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6645792B2 (en) 2001-06-27 2003-11-11 Matsushita Electric Industrial Co., Ltd. Lead frame and method for fabricating resin-encapsulated semiconductor device
EP3451378A1 (en) * 2017-08-31 2019-03-06 NXP USA, Inc. Packaged semiconductor device and method for forming
US10242935B2 (en) 2017-08-31 2019-03-26 Nxp Usa, Inc. Packaged semiconductor device and method for forming

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