JPH03145113A - Porcelain capacitor and manufacture thereof - Google Patents

Abstract

PURPOSE:To enhance the permittivity of the title porcelain capacitor using the specific compositional range of the fundamental component, consisting of Ba and Mg or Zn and Ti in which porcelain is shown by a specific chemical formula, the first additive substance consisting of Cr2O3 or Al2O3, and the second additive substance consisting of three-component type B2O3, SiO2 and specific metal oxide. CONSTITUTION:The title porcelain capacitor is composed of the fundamental component of porcelain of 100.0 pts.wt., the first additive component of 0.01 to 3.00 pts.wt., and the second additive component of 0.2 to 5.0 pts.wt. The fundamental component consists of (Bak-xMx)OkTiO2 (provided that M contains one or more kinds of metal selected from Mg and Zn, (k indicates the value within the range of 1.00 to 1.05, and (x) indicates the value within the range of 0.01 to 0.10), the first additive component consists of the metal oxide containing one or more kinds of Cr2O3 and Al2O3, and the second additive component consists of B2O3, SiO2 and MO (provided that MO consists of the metal oxide containing one or more kinds selected from BaO, GrO, CaO, MgO and ZnO). Also, the range of composition of the above-mentioned materials is within the region surrounded by the line linking the points A, B, C, D, E and F in the triangular diagram mentioned separately. As a result, a porcelain capacitor having high permittivity can be obtained.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a ceramic capacitor having a single-layer or laminated structure consisting of dielectric ceramic and at least two electrodes, and a method for manufacturing the same.

[Prior Art] Conventionally, when manufacturing multilayer ceramic capacitors, a conductive paste of noble metal such as platinum or palladium is printed in a desired pattern on a green sheet (unsintered ceramic sheet) made of dielectric ceramic raw material powder. A plurality of these sheets were stacked and pressed together, and sintered in an oxidizing atmosphere at 1300°C to 1600°C. Thereby, dielectric ceramic and internal t[i can be obtained at the same time.

As mentioned above, if a noble metal is used, the desired internal electrode can be obtained even if it is sintered at a high temperature in an oxidizing atmosphere. However, since precious metals such as platinum and palladium are expensive, the cost of multilayer ceramic capacitors has inevitably increased.

As a solution to the above-mentioned problem, Japanese Patent Publication No. 14607/1987, filed by the applicant, describes a method of (Bak-x Mx) OkTiO2 (where M is at least one of Mg and Zn). The basic components consisting of L
A dielectric ceramic composition containing additive components selected from iO and SiO2 is disclosed.

In addition, in Japanese Patent Publication No. 61-14608, instead of L1□O and 8102 in the above-mentioned Japanese Patent Publication No. 61-14607, L120, SiO2, and MO (however, MO is BaO,
A dielectric ceramic composition containing an additive component consisting of at least one of CaO and Sro is disclosed.

In addition, in Japanese Patent Publication No. 61-14609, (Bak-
, -yM, Ly) OkTiO2 (where M is Mg and Z
A dielectric ceramic composition is disclosed that includes a basic component in which n is at least one kind, L is at least one of Sr and Ca, and an additive component consisting of Li 2 O and 810□.

Moreover, in Japanese Patent Publication No. 61-14610, Li2O and sio in the above-mentioned Japanese Patent Publication No. 61-14609 are
Instead, a dielectric ceramic composition is disclosed that contains additive components consisting of L120, SiO2, and MO (MO being at least one of Bad, CaO, and SrO).

In addition, in Japanese Patent Publication No. 14611/1987, (Ba1<
-x Mx) OkTiO2 (where M is Mg, 7.n,
a basic component consisting of at least one of Sr and Ca);
A dielectric ceramic composition is disclosed that includes additive components consisting of B2O3 and SiO2.

In addition, in Japanese Patent Publication No. 1595/1983, (Ba
M) OT i 02 (However, M is Mg, Z-
At least one of xxk n, Sr, and Ca), B203 and MO (however, MO is BaOlMgO,
at least one of ZnO1SrO and CaO),
Disclosed is a dielectric ceramic composition comprising the following additive components.

In addition, in Japanese Patent Publication No. 1596-1986, instead of 8203 and MO in the above-mentioned Japanese Patent Publication No. 62-1595, B2
03, SiO□ and MO (however, MO is Bad, MgO, Z
A dielectric ceramic composition containing an additive component consisting of at least one of nO1SrO and CaO is disclosed.

The dielectric ceramic composition disclosed in these documents can be obtained by firing in a reducing atmosphere at 1200°C or lower, has a relative dielectric constant of 2000 or more, and has a temperature change rate of capacitance of 125.
It can be adjusted within a range of +/-10% at temperatures between +85°C and +85°C.

[Problem to be solved by the invention] Incidentally, with the recent increase in the density of electronic circuits, there is a strong demand for miniaturization of multilayer capacitors. It is desired to further increase the relative permittivity of the body over the relative permittivity of the dielectric ceramic compositions disclosed in the above-mentioned publications.

Therefore, the purpose of the present invention is to use a non-oxidizing atmosphere at 1200°C.
A ceramic capacitor equipped with a dielectric ceramic having a high dielectric constant and a small rate of change in dielectric constant over a wide temperature range, even though it is obtained by firing at the following temperatures, and a method for manufacturing the same. It is about providing.

[Means for Solving the Problems] To achieve the above object, the present invention provides a ceramic capacitor comprising a dielectric ceramic and at least two electrodes in contact with the ceramic, in which the ceramic has a weight of 100.0 parts of the basic component, 0.01 to 3.00 parts by weight of the first additive component, and 0.2 to 5.0 parts by weight of the second additive component, and the basic component is (Ba( -x M,)ok'r
to2 (However, M is at least one metal among Mg and Zn, k is 1.00 to 1.05, and X is 0.01 to 0
．． 10>, at least one additive component is at least one metal oxide of Cr2O3 and A I 203, and the second additive component is B2O
3, SiO2 and MO (however, MO is BaO1SrO,C
ab, MgAl2O3), and the B20, SiO□ and the MO
Point (A) in the triangular diagram showing these compositions in mol%, where the B2O3 is 1 mol%, the 5lO2 is 80 mol%, and the MO is 19 mol%, and the B2O3
is 1 mol%, the SiO2 is 39 mol%, and the MO is 6
Point (B) where the B2O3 is 0 mol%, and the point (B) where the B2O3 is 29 mol%, S
Point (C) where iO□ is 1 mol% and the MO is 70 mol%, and the B2O3 is 90 mol% and the SiO2 is 1 mol%.
, the point (D) where the MO is 9 mol%, and the point (D) where the B2O3 is 9 mol%
Point (E) where the SiO2 is 9 mol% and the MO is 1 mol%, and the point (E) where the B 203 is 19 mol% and the 5
This relates to a capacitor that is within a region surrounded by six straight lines connecting in order the point (F) where i02 is 80 mol % and the MO is 1 mol %. In the compositional formula showing the basic components, k-x, x, and k naturally indicate the number of atoms of each element, Ba is barium, 0 is oxygen, Ti is titanium, Mg is magnesium, and Zn is zinc. The first additive component CrO is chromium oxide, and Al 203 is aluminum oxide. In the second additive component, B2O3 is boron oxide, SiO2 is silicon oxide, BaO is barium oxide, SrO is strontium oxide, CaO is calcium oxide, MgO is magnesium oxide, and ZnO is zinc oxide.

The invention related to the manufacturing method includes the steps of: preparing a mixture of the above-mentioned basic components and additive components; making a molded product of the mixture having at least two electrode parts; and non-containing the molded product having the electrode parts. The present invention relates to a method for manufacturing a ceramic capacitor, which includes a step of firing in an oxidizing atmosphere and a step of heat-treating a molded product obtained by the firing in an oxidizing atmosphere.

Effect] The dielectric ceramic in the ceramic capacitor of the above invention can be obtained by firing in a non-oxidizing atmosphere at 1200° C. or lower.

Therefore, it becomes possible to manufacture a ceramic capacitor by applying a base metal conductive paste such as Niragel to a green sheet and firing the green sheet and the conductive paste at the same time. By setting the composition of the dielectric ceramic within the range specified in the present invention, the dielectric constant is 3000 or more, the dielectric loss tan δ is 2.5% or less, and the resistivity ρ is l.
X106MO・01 or more, and the temperature change rate of relative permittivity is -15% to +15% (25% to 155℃ to 125℃)
℃ standard>, 10% to +10% (25℃ to 85℃)
It is possible to provide a capacitor including a dielectric ceramic that is within the range of 0°C as a reference.

[Examples] Next, examples according to the present invention and comparative examples will be described.

First, in order to obtain the basic components according to the present invention at the ratio shown in the column x of % formula 1, in other words, (
B a M) OT i 02, more details 0
．． 96 0.06 1.02 48]4 Since M = MgO,05znO,01, 0.06 (Ba0.96Mgo, osZnO,01) 01.0
In order to obtain 2T" 2, B a with a purity of 99.0% or more
Prepare CO3 (barium carbonate), MgO (magnesium iR), Zn0 (zinc oxide), and titanium oxide (TiO□), and prepare 1044.09 g (equivalent to 0.96 mole part) of BaC0 without adding impurities. ) MgO: 11.11g (equivalent to 0.05 mole part) Zn
O: 4.48g (equivalent to 0.01 mole part) TiO2: 4
40.32 g (equivalent to <1.00 mole part) was weighed.

Next, these weighed raw materials are put into a pot mill<1)ot
Add alumina ball and water 2゜5
After stirring for 15 hours, the stirred material was placed in a stainless steel pot and dried for 14 hours at 150'C in a hot air dryer. The product was calcined at 1200° C. for 2 hours in the air to obtain the basic components of the above compositional formula.

On the other hand, in order to obtain the second additive component of sample Nα1 in Table 2, 0.99 g (1 mole part) of B2O3 and Si
68.38 g (80 mol parts) of O2, 10.63 g (3.8 mol parts) of BaCO3, and 7.0 g of SrCO3.
98g (3.8 mol parts) and 5.41g of CaCO3
(3.8 mole parts) and 2.18 g of MgO <3.8
Weighed 4.40 g (3.8 mole parts) of ZnO and 4.40 g (3.8 mole parts) of ZnO, and added 300 cc of alcohol to this mixture.
In addition, after stirring for 10 hours using an alumina ball in a polyethylene pot, it was pre-calcined in the air at 1000°C for 2 hours, put into an alumina pot with 300 cc of water, crushed with an alumina ball for 15 hours, and then, 150
Dry at ℃ for 4 hours to obtain 1 mol% B203, SiO2
is 80 mol%, MO is 19 mol% (Ba0 3.8 mol%
+SrO3, 8 mol% +CaO3, 8 mol% +Mg03
．． A powder of additive components having a composition of 8 mol % and 8 mol % of ZnO3 was obtained. Note that the proportions of BaO, SrO, CaO, MgO, and ZnO, which are the contents of MO, are all 20 mol% as shown in Table 2.

Next, 2 parts by weight (20 g) of the second additive component was added to 100 parts by weight (1000 g) of the basic component, and further, as the first additive component, well-aligned particles with an average particle size of 0.5 μm were added. 0.1 part by weight (1 part by weight) of Cr 203 with a purity of 99.0% or more
g) addition, and further adding 15% by weight of an organic binder extracted from an aqueous solution of an acrylic acid ester polymer, glycerin, and condensed phosphate based on the total weight of the basic component and the first and second additive components; Further, 50% by weight of water was added, and the mixture was placed in a ball mill and ground and mixed to prepare a slurry of porcelain raw materials.

Next, the above slurry is degassed by putting it into a vacuum defoaming machine, and this slurry is put into a reverse roll coater, and the thin film molding obtained from this is continuously coated on a long polyester film, and the same This was dried on a film by heating to 100° C. to obtain an unsintered porcelain sheet with a thickness of about 25 μm. This sheet is long, but it is
Cut it into a square with the CI corner and use it.

On the other hand, the conductive paste for internal electrodes has an average particle size of 1.5 μm.
10g of nickel powder and 0.9g of ethyl cellulose
was dissolved in 9.1 g of butylcarpitol, and the mixture was placed in a stirrer and stirred for 10 hours. This conductive paste was printed on one side of the unsintered porcelain sheet through a screen having 50 patterns each having a length of 14-1@7 circles, and then dried.

Next, two unsintered porcelain sheets were laminated with the printed surfaces facing up. At this time, the adjacent upper and lower sheets were arranged so that their printed surfaces were shifted by about half in the longitudinal direction of the pattern. Furthermore, four unsintered porcelain sheets with a thickness of 60 μm were laminated on each of the upper and lower surfaces of this laminate.Next, this laminate was subjected to a load of approximately 40 tons in the thickness direction at a temperature of approximately 50°C. I crimped it. Thereafter, this laminate was cut into a grid shape to obtain 50 laminate chips.

Next, this laminate was placed in a furnace capable of firing in an atmosphere, and the temperature was raised to 600° C. at a rate of 100° C./h in an air atmosphere to burn the organic binder. Thereafter, the atmosphere in the furnace was changed from air to an atmosphere of H2 (2% by volume) + N2 (98% by volume). Then, while maintaining the reducing atmosphere in the furnace as described above, the heating temperature of the laminate was increased from 600°C to the sintering temperature of 1150°C at a rate of 100°C/h to 1150°C (maximum temperature). After holding for 3 hours, 100℃
The temperature was lowered to 600'C at a rate of /h, the atmosphere was changed to an atmospheric atmosphere (oxidizing atmosphere), 600°C was maintained for 30 minutes for oxidation treatment, and then the laminated sintered chip was cooled to room temperature. was created.

Next, in order to obtain the multilayer ceramic capacitor 10 shown in FIG. 1, three dielectric ceramic layers 12 and two internal @[! A pair of external tf #11 and a laminated sintered chip 15 consisting of
6 was formed. Note that the external electrode 16 has zinc and glass frit (gl) on the side surface of the sintered chip 15 where the electrode is exposed.
A conductive paste consisting of (as frit) and a vehicle is applied and dried, and this is baked in the air at a temperature of 550° C. for 15 minutes to form a zinc electrode layer 18, and further electroless plating is applied on this. A copper layer 20 is formed using a method, and a pb-sn solder layer 2 is further formed on this using an electroplating method.
I will warn you from those who have set 2.

The thickness of the dielectric ceramic layer 12 of this capacitor 10 is 0.0
2m+, the opposing area of a pair of internal electrodes 14 is 5 spaces x 5 spaces =
It is 2511f12. Note that the composition of the porcelain 112 after sintering is substantially the same as the mixed composition of the basic components and additive components before sintering.

Next, when the electrical characteristics of the capacitor 10 were measured and the average value was calculated, as shown in Table 3, the relative dielectric constant ε was 3.
820. tan δ is 1.1%, resistivity ρ is 3.9X10
6MΩ・cl, -55℃ based on 25℃ capacitance
and rate of change of capacitance at +125°C ΔC-55, ΔC1
□5 is -10.9%, +3.7%, rate of change in capacitance ΔC at -25℃, +85℃ based on capacitance at 20℃
, Δ25 C85 were -5.1% and -6.2%.

Note that the electrical characteristics were measured in the following manner.

(A) The relative permittivity ε is at a temperature of 20°C and a frequency of 1k.
Hz, voltage (effective value) 1. The capacitance is measured under OV conditions, and the measured value is 25 cm2, which is the opposing area of the pair of internal electrodes 14.
The thickness of the ceramic layer 12 between the pair of internal electrodes 14 is 0.02a.
Calculated from ua.

(B) Dielectric loss tan δ (%) was measured under the same conditions as the relative dielectric constant.

(C) Resistivity p<MΩ・cll) at temperature 20'C
After applying DClooV for 1 minute, the resistance value between the pair of external electrodes 16 was measured, and calculated based on this measured value and the dimensions.

<D) Temperature characteristics of capacitance are determined by placing the sample in a constant temperature bath and measuring temperatures of -55°C, -25°C, 0°C, +20°C, 25°C,
+40℃, +60℃, +85℃, +105℃, +125
At each temperature of ℃, frequency 1 kHz, voltage (effective value) 1. Measure capacitance under OV conditions, 20″C and 2
It was obtained by determining the rate of change at each temperature with respect to the capacitance at 5°C.

The manufacturing method and characteristics of Sample 11QI have been described above, but for Samples 11Q2 to 100, the compositions of basic components and additive components, their ratios, and the firing temperature in a reducing atmosphere are shown in Tables 1 to 3. The pond changed as shown in the table is
A multilayer ceramic capacitor was manufactured in exactly the same manner as Sample 1, and its electrical characteristics were measured in the same manner.

Table 1 shows the composition of the basic component and first additive component of each sample and the amount of the second additive component added, Table 2 shows the composition of the second additive component of each sample, Table 3 shows the firing temperature and electrical characteristics of each sample.
Note that x in the basic component column of Table 1 indicates the number of atoms of each element in the composition formula, that is, the ratio of the number of atoms of each element when the number of Ti atoms is l; , Zn indicate the content of M in the general formula, the number of atoms thereof is shown in these columns, and the total value (X value) of these is shown in the column of total. The amount of the first and second additive components is 1 of the basic component.
It is expressed in parts by weight relative to 00 parts by weight. The MO content of the second additive component in Table 2 includes BaO1Mg01
The proportions of ZnO and 5rO5CaO are shown in mol%. In Table 3, the temperature characteristics of capacitance are the capacitance change rates ΔC (%) and ΔC (%) at -55 °C and +125 °C based on the capacitance at 25 °C, and -55125 20 °C. The capacitance change rates ΔC (%) and ΔC8525 (%) at −25° C. and +85° C. are shown based on the capacitance of .

As is clear from Tables 1 to 3, in the samples according to the present invention, in a non-oxidizing atmosphere, at 1200°C or less, MΩ・C11 or more, the temperature change rate of capacitance ΔC-55 and ΔC are -15
% to +15%, ΔC125 and 25 ΔC85 are in the range of -10% to +10%, and a capacitor with desired characteristics can be obtained. On the other hand, sample NQ7~
10, 26.31.32.37.38.46.47.5
5.56.64-68.73.74.78.79.89
~92.99.100 cannot achieve the purpose of the present invention, and therefore they are outside the scope of the present invention.

Although only ΔC1, ΔC125, ΔC-25, and Δ5C are shown in Table 3, various changes in capacitance in the range of 25°C to +85°C are shown in Table 3. To the rate, 〇 falls within the range of -10% to +10%,
Further, various capacitance change rates ΔC in the range of -55°C to +125°C are within the range of -15% to +15%.

Next, the reasons for limiting the composition will be described.

If the value of
As shown in 8, when the value of X is 0.01, desired electrical characteristics can be obtained. Therefore, the lower limit of the value of X is 0.01. On the other hand, between samples 46.55.64.65
．． As shown in 66.67, when the value of
As shown in FIG. 3, when the value of X is 0.10, desired electrical characteristics can be obtained. Therefore, the upper limit of the value of X is 0.10. Note that Mg and Zn, which are the M components, work almost in the same way, and the same result can be obtained even if one selected from them is used or a plurality of them are used. And M
It is desirable that the value of X be in the range of 0.01 to 0.10 in either case of one or more of the components.

When the value of k is smaller than 1.0, as shown in sample NQ68.74, ρ becomes less than l×106MΩ・cm, which is significantly lower. However, as shown in sample NQ69.75, when the value of k is smaller than i , oo, desired electrical characteristics can be obtained. Therefore, the lower limit of the value of k is 1.00. On the other hand, if the value of k is larger than 1.05, as shown in the sample interval 73.78, a dense sintered body cannot be obtained, but as shown in the sample interval 72.77, the value of k is 1.05. In the case of 05, desired electrical characteristics can be obtained. Therefore, the upper limit of the value of k is 1
．． It is 05.

Cr2O3 and/or Al2O3 as the first additive component
If the amount added is zero as shown in sample NQ79.92,
Although ΔC-55 is less than 15%, sample N1181.
As shown in 93.94, the amount added is 100'! When the amount is 0.01 part by weight based on jL parts of the basic component, desired characteristics can be obtained. Therefore, the lower limit of the first additive component is 0.
It is 01. On the other hand, between samples 89.90.91.99.1
As shown in Sample 11Q86.87.88.00, when Addition 1 is more than 3.0 parts by weight, such as 3.10, a dense sintered body cannot be obtained even if fired at 1250°C. 98
As shown in the figure, when the amount added is 3.0 parts by weight, desired characteristics can be obtained. Therefore, the upper limit of the first additive component is 3
．． It is 0 parts by weight. Note that the first additive component CrO
and Al2O3 work in almost the same way, and the same results can be obtained even if one selected from them is used or a plurality of them are used. And, regardless of whether the first additive component is one type or multiple types, the amount added is preferably in the range of 0.01 to 3.0.
Note that this first additive component contributes to improving the temperature characteristics of capacitance.

That is, by addition of the first additive component, the temperature is
Temperature change rate of capacitance ΔC-55 to ΔC in the range of 5℃
1□5 can be easily kept within the range of -15% to +15%, and the temperature change rate of capacitance ΔC-25 to ΔC85 in the range of -25°C to 85°C can be reduced to -10%. ~
It becomes possible to easily keep the capacitance within the range of +10%, and it is possible to reduce the fluctuation range of the temperature change rate of capacitance in each temperature range. Further, the first additive component has the effect of slightly increasing the resistivity ρ.

When the amount of the second additive component is zero, sample NQ26
．． As is clear from sample NQ27.32, a dense sintered body cannot be obtained even if the firing temperature is 1250°C.
As shown in Figure 2, when the amount added is 0.2 parts by weight per 100 parts by weight of the basic components, a sintered body having desired electrical properties can be obtained by firing at 1190°C. Therefore, the lower limit of the second additive component is 0.2 parts by weight. On the other hand, sample NO.
, 31, 37, the amount of the second additive component added is 7.
．． In the case of 0 parts by weight, ε is less than 3000 and ΔC or ΔC125 is outside the range of -15% to +1555%, but as shown in sample NQ30.36,
When the amount added is 5.0 parts by weight, desired characteristics can be obtained. Therefore, the upper limit of the amount added is 5.0 parts by weight.

The preferred composition of the second additive component is B2B20 in FIG.
It can be determined based on a triangular diagram showing the composition ratio of 3-8tO2-. The first point (A) in the triangular diagram is sample 11
QI B 203 is 1 mol%, SiO2 is 80 mol%,
MO shows a composition of 19 mol%, and the second point (B) has a composition of sample NQ2 with 1 mol% of B2O3 and 39 mol% of SiO2.
, MO shows a composition of 60 mol%, and the third point (C) is
Sample No. 3 has a composition of 29 mol% B2O3, 1 mol% SiO2, and 70 mol% MO, and the fourth point (D) has a composition of 90 mol% B2O3 and 1 mol% SiO2 of sample NQ4. , MO shows a composition of 9 mol %, the fifth point (E) shows a composition of 90 mol % of 8203 of sample NQ5, 9 mol % of SiO2, and 1 mol % of MO, and the sixth point ( F) shows the composition of sample NQ6 with 19 mol% of 8203, 80 mol% of SiO2, and 1 mol% of MO.

The composition of the additive components of the sample that falls within the scope of the present invention is within the region surrounded by six straight lines connecting points 1 to 6 (A) to (F) in the triangular diagram in order.

If the composition is within this range, desired electrical characteristics can be obtained. On the other hand, if the composition of the second additive component is outside the range specified in the present invention, as in Samples NQ7-1O, a dense sintered body cannot be obtained. As shown in <BaOlMgO,
It may be any one of ZnO1SrO1CaO, or an appropriate ratio as shown in other samples.

[Modifications] Although the embodiments of the present invention have been described above, the present invention is not limited thereto, and, for example, the following modifications are possible.

(a) A trace amount of mineralizing agent such as Mn07 (preferably 0.05 to 0.1% by weight) is added to the basic ingredients within a range that does not impede the purpose of the present invention to improve sinterability. Other substances may be added as necessary.

(b) The starting materials may be oxides or hydroxides or other compounds other than those shown in the examples.

(c) The temperature of the treatment in the oxidizing atmosphere after the treatment in the non-oxidizing atmosphere during firing is lower than the sintering temperature other than 600 °C (preferably in the range of 500 °C to 1000 °C)
In other words, various changes can be made in consideration of the electrode material such as nickel and the oxidation of the porcelain.

(d) The firing temperature in a non-oxidizing atmosphere can be varied depending on the Ti material. When nickel is used as the internal electrode, almost no aggregation of Nigel particles occurs in the range of 1050°C to 1200°C.

(e) Sintering may be performed in a neutral atmosphere.

(f) It is of course applicable to general single-layer ceramic capacitors other than multilayer ceramic capacitors.

[Brief explanation of the drawing]

FIG. 1 is a sectional view showing a multilayer ceramic capacitor according to an embodiment of the present invention, and FIG. 2 is a triangular diagram showing the composition range of additive components. 12... Ceramic layer, 14... Internal electrode, 16... External electrode.

Claims (1)

[Scope of Claims] [1] A ceramic capacitor comprising a dielectric ceramic and at least two electrodes in contact with the ceramic, wherein the ceramic contains 100.0 parts by weight of a basic component and 0.01 to 0.01 parts by weight of a basic component.
It consists of 3.00 parts by weight of the first additive component and 0.2 to 5.0 parts by weight of the second additive component, and the basic component is (Ba_k_-_x M_x)O_kTiO_2 (where M is Mg , Zn, k is a numerical value within the range of 1.00 to 1.05, and x is a numerical value within the range of 0.01 to 0.10), and the first additive component is a combination of Cr_2O3 and Al_2O_3. The second additive component is B_2O_3, SiO_2, and MO (however, MO
consists of at least one metal oxide of BaO, SrO, CaO, MgO and ZnO), and the B_2
The composition range of O_3, the SiO_2, and the MO is a point (A) where the B_2O_3 is 1 mol%, the SiO_2 is 80 mol%, and the MO is 19 mol% in a triangular diagram showing these compositions in mol%. , said B_2
Point (B) where O_3 is 1 mol%, SiO_2 is 39 mol%, MO is 60 mol%, and B_2O_3 is 2 mol%.
9 mol%, the SiO_2 is 1 mol%, the MO is 70
Point (C) of mol% and the above B_2O_3 is 90 mol%,
The point where the SiO_2 is 1 mol% and the MO is 9 mol% (
D), the B_2O_3 is 90 mol%, the SiO_
Six wires connect in order the point (E) where B_2O_3 is 19 mol%, the SiO_2 is 80 mol%, and the MO is 1 mol%. A capacitor characterized by being within an area surrounded by a straight line. [2] 100.0 parts by weight of basic components, and 0.01 to 3.
It consists of 00 parts by weight of the first additive component and 0.2 to 5.0 parts by weight of the second additive component, and the basic component is (Ba_k_−_xM_x)O_kTiO_2 (however,
M is at least one metal selected from Mg and Zn, and k is 1.
00 to 1.05, X is a numerical value within the range of 0.01 to 0.10), and the first additive component is Cr_2O_3 and A
1_2O_3, and the second additive component is B_2O_3, SiO_2 and M
O (however, MO is at least one metal oxide of BaO, SrO, CaO, MgO and ZnO),
In addition, the composition range of the B_2O_3, the SiO_2, and the MO is at a point (A ) and the above B_2
Point (B) where O_3 is 1 mol%, SiO_2 is 39 mol%, MO is 60 mol%, and B_2O_3 is 2 mol%.
9 mol%, the SiO_2 is 1 mol%, the MO is 70
Point (C) of mol% and the above B_2O_3 is 90 mol%,
The point where the SiO_2 is 1 mol% and the MO is 9 mol% (
D), the B_2O_3 is 90 mol%, the SiO_
Six wires connecting in order the point (E) where 2 is 9 mol% and the MO is 1 mol%, and the point (F) where the B_2O_3 is 19 mol%, the SiO_2 is 80 mol%, and the MO is 1 mol%. a step of preparing a mixture characterized in that the mixture is within a region surrounded by a straight line; a step of making a molded article of the mixture having at least two electrode portions; and a step of making the molded article having the electrode portions A method for manufacturing a ceramic capacitor, comprising: firing in a non-oxidizing atmosphere; and heat-treating a molded product obtained by the firing in an oxidizing atmosphere.