JPH03140335A - Formation of polymer film containing dispersed hyperfine powder of semiconductor - Google Patents
Formation of polymer film containing dispersed hyperfine powder of semiconductorInfo
- Publication number
- JPH03140335A JPH03140335A JP27718889A JP27718889A JPH03140335A JP H03140335 A JPH03140335 A JP H03140335A JP 27718889 A JP27718889 A JP 27718889A JP 27718889 A JP27718889 A JP 27718889A JP H03140335 A JPH03140335 A JP H03140335A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- polymer film
- particles
- dispersed
- hyperfine
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 47
- 229920006254 polymer film Polymers 0.000 title claims abstract description 26
- 230000015572 biosynthetic process Effects 0.000 title description 4
- 239000000843 powder Substances 0.000 title description 3
- 239000002245 particle Substances 0.000 claims abstract description 33
- 239000002994 raw material Substances 0.000 claims abstract description 24
- 238000001704 evaporation Methods 0.000 claims abstract description 20
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 238000000034 method Methods 0.000 claims abstract description 13
- 229920000642 polymer Polymers 0.000 claims abstract description 4
- 239000000178 monomer Substances 0.000 claims description 12
- 230000002238 attenuated effect Effects 0.000 claims description 7
- 238000000151 deposition Methods 0.000 claims description 3
- 230000000379 polymerizing effect Effects 0.000 claims description 3
- 230000008020 evaporation Effects 0.000 abstract description 15
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 abstract description 9
- 229910052721 tungsten Inorganic materials 0.000 abstract description 9
- 239000010937 tungsten Substances 0.000 abstract description 9
- BEKFRNOZJSYWKZ-UHFFFAOYSA-N 4-[2-(4-aminophenyl)-1,1,1,3,3,3-hexafluoropropan-2-yl]aniline Chemical compound C1=CC(N)=CC=C1C(C(F)(F)F)(C(F)(F)F)C1=CC=C(N)C=C1 BEKFRNOZJSYWKZ-UHFFFAOYSA-N 0.000 abstract description 4
- 230000003287 optical effect Effects 0.000 abstract description 4
- 230000000694 effects Effects 0.000 abstract description 2
- 230000005693 optoelectronics Effects 0.000 abstract description 2
- 238000006116 polymerization reaction Methods 0.000 abstract description 2
- 150000001875 compounds Chemical class 0.000 abstract 2
- 239000011882 ultra-fine particle Substances 0.000 description 24
- 239000011521 glass Substances 0.000 description 13
- 239000000463 material Substances 0.000 description 5
- 229920001721 polyimide Polymers 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 4
- -1 3 , 4-dicarboxyphenyl Chemical group 0.000 description 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- GTDPSWPPOUPBNX-UHFFFAOYSA-N ac1mqpva Chemical compound CC12C(=O)OC(=O)C1(C)C1(C)C2(C)C(=O)OC1=O GTDPSWPPOUPBNX-UHFFFAOYSA-N 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 229920005597 polymer membrane Polymers 0.000 description 2
- 230000008022 sublimation Effects 0.000 description 2
- 238000000859 sublimation Methods 0.000 description 2
- QGHDLJAZIIFENW-UHFFFAOYSA-N 4-[1,1,1,3,3,3-hexafluoro-2-(4-hydroxy-3-prop-2-enylphenyl)propan-2-yl]-2-prop-2-enylphenol Chemical group C1=C(CC=C)C(O)=CC=C1C(C(F)(F)F)(C(F)(F)F)C1=CC=C(O)C(CC=C)=C1 QGHDLJAZIIFENW-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910007709 ZnTe Inorganic materials 0.000 description 1
- 150000008064 anhydrides Chemical class 0.000 description 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Manufacture Of Macromolecular Shaped Articles (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は例えばオプトエレクトニクス用の非線型光学素
子、光学デバイス用の有色フィルタ等に用いる半導体超
微粒子を分散した高分子膜の形成方法に関する。Detailed Description of the Invention (Field of Industrial Application) The present invention relates to a method for forming a polymer film in which ultrafine semiconductor particles are dispersed, which is used for example in nonlinear optical elements for optoelectronics, colored filters for optical devices, etc. .
（従来の技術）
従来、この種の形成方法としては、有色ガラスフィルタ
の場合について示せば、ガラス材と半導体成分を加熱し
溶解させながらガラス中に半導体粒子を形成、分散させ
た後、冷却させて有色ガラスフィルタを作成していた。(Prior Art) Conventionally, in the case of colored glass filters, this type of formation method involves heating and melting a glass material and a semiconductor component to form and disperse semiconductor particles in the glass, and then cooling the filter. and created colored glass filters.
（発明が解決しようとする課２０）
前記有色ガラスフィルタの形成方法は、ガラス材と半導
体成分を溶解させながらガラス中に半導体粒子を形成し
て分散させるため、半導体粒子の粒径をうまく制御出来
ないという問題がある。(Problem 20 to be solved by the invention) The method for forming the colored glass filter is to form and disperse semiconductor particles in the glass while melting the glass material and the semiconductor component, so that the particle size of the semiconductor particles cannot be well controlled. The problem is that there is no.
そこで、ガラス原料を半導体原料と同時に蒸発させ、ガ
ラス中に半導体超微粒子を分散させる方法が考えられる
が、ガラスの性質上ガラスを蒸発させることは極めて困
難であり実用性がなく現在全く行われていない。Therefore, a method of evaporating the glass raw material at the same time as the semiconductor raw material and dispersing the semiconductor ultrafine particles in the glass has been considered, but due to the nature of glass, it is extremely difficult to evaporate glass, and it is not practical at present. do not have.
本発明は、前記問題点を解消した均一な粒径の半導体超
微粒子を分散した高分子膜の形成方法を提供することを
目的とする。SUMMARY OF THE INVENTION An object of the present invention is to provide a method for forming a polymer film in which ultrafine semiconductor particles having a uniform particle size are dispersed, which solves the above-mentioned problems.
（課題を解決するための手段）
本発明の半導体超微粒子を分散した高分子膜の形成方法
は、真空中で高分子の原料モノマーを蒸発させ、これを
基板上で蒸着重合させて該基板上に高分子膜を形成させ
つつ、これと同時に半導体原料を昇華させて、得られる
半導体超？ＩＩ粒子の運動エネルギーを減衰させてこれ
を同時に蒸着させて該高分子膜中に分散させることを特
徴とする。(Means for Solving the Problems) The method of forming a polymer film in which semiconductor ultrafine particles are dispersed according to the present invention is to evaporate a raw material monomer of a polymer in a vacuum, and vapor-deposit and polymerize it on a substrate. A semiconductor material obtained by forming a polymer film and sublimating the semiconductor raw material at the same time? The method is characterized in that the kinetic energy of the II particles is attenuated and the particles are simultaneously vapor deposited and dispersed in the polymer film.
真空中で蒸発させる高分子膜の一方の原料モノマーとし
ては、２，２〜ビス（４−アミノフェニル）へキサフロ
ロプロパン、２．２−ビス［４−（４−アミノフェノキ
シ）フェニル］ヘキサフロロプロパン等が挙げられる。One raw material monomer for the polymer membrane to be evaporated in vacuum includes 2,2-bis(4-aminophenyl)hexafluoropropane and 2,2-bis[4-(4-aminophenoxy)phenyl]hexafluoro. Examples include propane.
また、他方の原料モノマーとしては、２，２−ビス（３
，４−ジカルボキシフェニル）へキサフロロプロパンニ
無水物、トリフロロメチルピロメリット酸二無水物等が
挙げられる。In addition, as the other raw material monomer, 2,2-bis(3
, 4-dicarboxyphenyl) hexafluoropropani dianhydride, trifluoromethylpyromellitic dianhydride, and the like.
高分子膜中に分散させる半導体超微粒子の原料としては
、ＩＩ−Ｖｌ族のＣｄＳ 、 ＣｄＳｅ、 ＺｎＴｅ等
が挙げられる。Examples of raw materials for semiconductor ultrafine particles to be dispersed in the polymer film include II-Vl group CdS, CdSe, ZnTe, and the like.
また、前記両原料モノマーを蒸発させて基板上で重合さ
せる際の真空度としてはｌＸｌ０−’〜１ ｘ １０−
’Ｔｏｒｒ程度に設定する。In addition, the degree of vacuum when evaporating both of the raw material monomers and polymerizing them on the substrate is lXl0-' to 1 x 10-
'Set to about Torr.
また、半導体超微粒子の運動エネルギーの減衰は、例え
ば反射板に反射させて行うようにしてもよいし、或いは
半導体超微粒子が昇華する間にレーザー照射（レーザー
による冷却）を行うようにしてもよい。Furthermore, the kinetic energy of the semiconductor ultrafine particles may be attenuated by, for example, reflecting it off a reflector, or by laser irradiation (cooling by laser) while the semiconductor ultrafine particles sublimate. .
また、基板上に形成される高分子膜の形成速度を調整す
ることによって高分子膜中に分散させる半導体超微粒子
の分散量を調整することが出来る。Furthermore, by adjusting the formation rate of the polymer film formed on the substrate, the amount of semiconductor ultrafine particles dispersed in the polymer film can be adjusted.
また、基板と半導体原料を昇華させる装置との間に質量
分析装置を設置し、該装置によって昇華する半導体超微
粒子の粒径を選択、制御することが出来る。Furthermore, a mass spectrometer is installed between the substrate and the device for sublimating the semiconductor raw material, and the particle size of the semiconductor ultrafine particles to be sublimed can be selected and controlled by the device.
尚、半導体超微粒子を高分子膜に分散させた後、適当な
熱処理を施すことによって、有機物高分子膜を形成する
場合も、この加熱により半導体超微粒子は特に変化はな
い。Note that even when an organic polymer film is formed by dispersing semiconductor ultrafine particles in a polymer film and then subjecting them to appropriate heat treatment, the semiconductor ultrafine particles are not particularly changed by this heating.
（作 用）
運動エネルギーを減衰された半導体超微粒子は基板上で
蒸着重合されて形成される高分子膜に取り込まれ均一に
分散される。(Function) The semiconductor ultrafine particles whose kinetic energy has been attenuated are incorporated into a polymer film formed by vapor deposition and polymerization on a substrate and are uniformly dispersed.
（実施例）
以下添付図面に従って本発明の実施例について説明する
。(Example) Examples of the present invention will be described below with reference to the accompanying drawings.
第１図は本発明方法を実施する装置の１例を示すもので
、図中、１は処理室を示す。該処理室１内は外部の真空
ポンプその他の真空排気系２に接続すると共に、該処理
室１内に高分子の蒸着膜を形成せしめるべき基板３を固
定板４上に保持するようにした。また、該処理室１内に
前記基板３に対向する位置に高分子膜の原料モノマーａ
とｂを夫々蒸発させるためのガラス製の蒸発用容器５，
５を設け、該各蒸発用容器５をその近傍に設けられた水
晶振動の蒸発モニター（図示せず）と、ハロゲンヒータ
ー６とによって前記高分子膜の原料モノマーａおよびｂ
の蒸発を常に一定化させる所定温度にコントロール出来
るようにした。更に、該処理室１内に前記基板３に対向
させて前記蒸発用容器５の位置とは異なる位置に半導体
原料Ｃを昇華させるための孔７（孔径２〜３ｎ程度）を
備え、１対の銅電極８間に配置されたタングステンヒー
ターセル９を設け、タングステンヒーターｌＯと処理室
１外に設けた赤外線温度計（図示せず）によりヒータ一
部の温度をモニターしながら半導体原料Ｃを加熱し、熱
平衡に達して所定粒径（４０〜１００人程度）に成長し
た半導体超微粒子の昇華を常に一定化させる所定温度に
コントロール出来るようにした。FIG. 1 shows an example of an apparatus for carrying out the method of the present invention, and in the figure, 1 indicates a processing chamber. The inside of the processing chamber 1 is connected to an external vacuum pump or other evacuation system 2, and a substrate 3 on which a polymer vapor-deposited film is to be formed is held on a fixed plate 4 inside the processing chamber 1. In addition, a raw material monomer a for the polymer film is placed in the processing chamber 1 at a position facing the substrate 3.
a glass evaporation container 5 for evaporating and b, respectively;
5, each evaporation container 5 is connected to a crystal vibration evaporation monitor (not shown) provided near the evaporation container 5, and a halogen heater 6 to evaporate the raw material monomers a and b of the polymer film.
The temperature can be controlled to a predetermined temperature to keep the evaporation constant. Further, a hole 7 (hole diameter of about 2 to 3 nm) for sublimating the semiconductor raw material C is provided in the processing chamber 1 at a position opposite to the substrate 3 and different from the position of the evaporation container 5. A tungsten heater cell 9 placed between copper electrodes 8 is provided, and the semiconductor raw material C is heated while monitoring the temperature of a part of the heater using a tungsten heater 1O and an infrared thermometer (not shown) provided outside the processing chamber 1. The temperature can be controlled at a predetermined temperature so that the sublimation of semiconductor ultrafine particles that have reached thermal equilibrium and grown to a predetermined particle size (approximately 40 to 100 particles) is kept constant.
また、基板３を保持する固定数４に固定板４の表面から
間隔を存して基板３に対向する反射板１１を設けた。尚
、反射板１１は固定板４の表面に対してその角度を可変
調整出来るようにしてもよい。このように反射板１１の
を設けることによりタングステンヒーターセル９で加熱
されて昇華した半導体超微粒子が基板３に到達した際、
半導体超微粒子自体が有する高い運動エネルギーによっ
て半導体超微粒子が高分子膜に直接蒸着せずに飛散する
が、その飛散した半導体超微粒子を反射板１１で基板３
側に反射させることが出来るから、タングステンヒータ
ーセル９で加熱されて昇華した半導体超微粒子の運動エ
ネルギーが非常に高い場合であってもその運動エネルギ
ーを減衰することが出来て基板３上に形成されている高
分子膜に確実に蒸着、分散させることが出来る。In addition, a reflecting plate 11 was provided at the fixed number 4 for holding the substrate 3 so as to face the substrate 3 at a distance from the surface of the fixed plate 4. Incidentally, the angle of the reflecting plate 11 with respect to the surface of the fixed plate 4 may be variably adjusted. By providing the reflective plate 11 in this way, when the semiconductor ultrafine particles heated and sublimated by the tungsten heater cell 9 reach the substrate 3,
Due to the high kinetic energy of the semiconductor ultrafine particles themselves, the semiconductor ultrafine particles are not directly deposited on the polymer film but are scattered.
Since it can be reflected to the side, even if the kinetic energy of the semiconductor ultrafine particles heated and sublimated in the tungsten heater cell 9 is very high, the kinetic energy can be attenuated and the particles formed on the substrate 3 can be It can be reliably deposited and dispersed on polymer membranes.
次に前記装置を用いて半導体超微粒子を分散した高分子
膜の形成の具体的実施例について説明する。Next, a specific example of forming a polymer film in which ultrafine semiconductor particles are dispersed using the above-mentioned apparatus will be described.
実施例
先ず、蒸発用容器５，５の一方に原料モノマーａとして
２．２−ビス（４−アミノフェニル）へキサフロロプロ
パンと、他方に原料モノマーとして２，２−ビス（３，
４−ジカルボキシフェニル）へキサフロロブロバンニ無
水物を夫々充填し、またタングステンヒーターセル９に
半導体原料ＣとしてＣｄＳ粉末を充填した後、処理室１
内の全圧を真空排気系２を介して４ Ｘ １０−’Ｔｏ
ｒｒに設定する。Example First, 2,2-bis(4-aminophenyl)hexafluoropropane was placed in one of the evaporation vessels 5, 5 as the raw material monomer a, and 2,2-bis(3,
4-dicarboxyphenyl) hexafluorobrovanni anhydride and CdS powder as the semiconductor raw material C into the tungsten heater cell 9, the processing chamber 1
The total pressure inside the 4 x 10-'To
Set to rr.
次に、蒸発モニターで蒸発用容器５，５から各原料モノ
マーａ、ｂの蒸発量を測定しながらハロゲンヒーター６
．６によって２．２−ビス（４−アミノフェニル）へキ
サフロロプロパンを温度２００±１℃に、また２、２−
ビス（３゜４−ジカルボキシフェニル）へキサフロロプ
ロパンニ無水物を温度２００±１℃に夫々加熱すると共
に、赤外線温度計でタングステンヒーターセル９の孔７
からＣｄＳの昇華量をΔｐ１定しながらタングステンヒ
ーターＩＯによってＣｄＳ粉末をｌｉｉ度６１０±１０
℃に加熱した。Next, while measuring the amount of evaporation of each raw material monomer a and b from the evaporation containers 5 and 5 with an evaporation monitor,
．． 2,2-bis(4-aminophenyl)hexafluoropropane to a temperature of 200±1°C and 2,2-
Bis(3°4-dicarboxyphenyl)hexafluoropropanihydride was heated to a temperature of 200±1°C, and the hole 7 of the tungsten heater cell 9 was heated with an infrared thermometer.
The CdS powder was heated by a tungsten heater IO at a temperature of 610±10 degrees while keeping the sublimation amount of CdS constant at Δp1.
heated to ℃.
次いで、原料上ツマ−ａ、ｂが所定温度に達して所要の
蒸発量が得られた後に、処理室１内の固定板４に保持さ
れた基板３（マツナミ製ガラス）上に該原料モノマーａ
、ｂをＢＯ人／分の析出速度で堆積させポリイミド膜を
作成しながら、所定温度により熱平衡に達して粒径約７
０人に成長したＣｄＳ超微粒子をタングステンヒーター
セル９の孔７から昇華させてポリイミド膜に到告させる
。その際高い運動エネルギーを有するＣｄＳ超微粒子は
該膜に直接蒸着せずに飛散し、その飛散したＣｄＳ超微
粒子が反射板１１に衝突して反射し、その反射したＣｄ
Ｓ超微粒子が固定板４と反射板１１の間で反射を繰り返
すことによってＣｄＳ超微粒子はそれ自体が有する運動
エネルギーが減衰されて基板３上に形成されているポリ
イミド膜にＣｄＳ Ｂ３微粒子を蒸着した。Next, after the raw material upper knobs a and b reach a predetermined temperature and the required amount of evaporation is obtained, the raw material monomer a is placed on the substrate 3 (glass made by Matsunami) held on the fixed plate 4 in the processing chamber 1.
, b are deposited at a deposition rate of BO/min to form a polyimide film, thermal equilibrium is reached at a predetermined temperature, and the grain size is approximately 7.
The CdS ultrafine particles that have grown to zero are sublimated through the holes 7 of the tungsten heater cell 9 and delivered to the polyimide film. At that time, the CdS ultrafine particles with high kinetic energy are not directly deposited on the film but are scattered, and the scattered CdS ultrafine particles collide with the reflection plate 11 and are reflected, and the reflected CdS
As the S ultrafine particles were repeatedly reflected between the fixing plate 4 and the reflection plate 11, the kinetic energy of the CdS ultrafine particles itself was attenuated, and the CdS B3 particles were deposited on the polyimide film formed on the substrate 3. .
尚、原料モノマーａ、ｂは化学量論的にポリイミド膜が
形成されるように蒸発量の調整によって１：１のモル比
で蒸発するようにした。また、原料モノマーａ、ｂの蒸
発時における処理室１内の圧力は４ Ｘ １Ｏ−３Ｔｏ
ｒｒとした。The raw material monomers a and b were evaporated at a molar ratio of 1:1 by adjusting the amount of evaporation so that a polyimide film was formed stoichiometrically. Furthermore, the pressure inside the processing chamber 1 during the evaporation of the raw material monomers a and b is 4 X 1O-3To
It was set as rr.
このようにＣｄＳ超微粒子の蒸着したポリイミド膜が形
成された基１！ｉ２３を処理室１内から取り出した後、
温度３００℃の熱処理を施してＣｄＳ超微粒子が均一に
分散した有色フィルタを作成した。In this way, a polyimide film with CdS ultrafine particles deposited was formed on the base 1! After taking out i23 from the processing chamber 1,
A colored filter in which ultrafine CdS particles were uniformly dispersed was produced by heat treatment at a temperature of 300°C.
また、前記実施例では有色フィルタについて説明したが
、本発明はこれに限定されるものではなく、例えばＣｕ
Ｃｊ！のような非線型光学材料の作成にも広く応用出来
る。Further, although the above-mentioned embodiments have described colored filters, the present invention is not limited thereto; for example, Cu filters are used.
Cj! It can also be widely applied to the creation of nonlinear optical materials such as .
（発明の効果）
このように本発明の形成法によるときは、真空中で高分
子の原料上ツマ−を蒸発させ、これを基板上で蒸着重合
させて該基板上に高分子膜を形成させつつ、これと同時
に半導体原料を昇華させて、得られる半導体超微粒子の
運動エネルギーを減衰させてこれを同時に蒸着させて該
高分子膜中に分散させるようにしたので、高分子膜中に
均一な粒径の半導体超微粒子を分散させることが出来る
ばかりでなく、分散される半導体超微粒子の粒径や濃度
を任意に制御出来る等の効果がある。(Effects of the Invention) As described above, when using the formation method of the present invention, a polymer film is formed on the substrate by evaporating the material on the polymer material in a vacuum, and vapor depositing and polymerizing it on the substrate. At the same time, the semiconductor raw material was sublimated to attenuate the kinetic energy of the resulting semiconductor ultrafine particles, which were simultaneously vapor-deposited and dispersed in the polymer film. Not only can semiconductor ultrafine particles of a particle size be dispersed, but also the particle size and concentration of the dispersed semiconductor ultrafine particles can be arbitrarily controlled.
第１図は本発明半導体超微粒子を分散した高分子膜の形
成方法を実施するための装置の１例の載断面図である。
外３名
第１図FIG. 1 is a cross-sectional view of an example of an apparatus for carrying out the method of forming a polymer film in which ultrafine semiconductor particles are dispersed according to the present invention. Figure 1: 3 other people
Claims (1)
基板上で蒸着重合させて該基板上に高分子膜を形成させ
つつ、これと同時に半導体原料を昇華させて、得られる
半導体超微粒子の運動エネルギーを減衰させて、これを
同時に蒸着させて該高分子膜中に分散させることを特徴
とする半導体超微粒子を分散した高分子膜の形成方法。 ２、前記半導体超微粒子の運動エネルギーの減衰は該半
導体超微粒子を反射板に反射させて行うことを特徴とす
る請求項１に記載の半導体超微粒子を分散した高分子膜
の形成方法。[Claims] 1. Evaporating a raw material monomer for a polymer in a vacuum, vapor-depositing and polymerizing it on a substrate to form a polymer film on the substrate, and simultaneously sublimating a semiconductor raw material. A method for forming a polymer film in which ultrafine semiconductor particles are dispersed, characterized in that the kinetic energy of the resulting ultrafine semiconductor particles is attenuated and the particles are simultaneously vapor deposited and dispersed in the polymer film. 2. The method for forming a polymer film in which ultrafine semiconductor particles are dispersed according to claim 1, wherein the kinetic energy of the ultrafine semiconductor particles is attenuated by reflecting the ultrafine semiconductor particles on a reflecting plate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27718889A JP2819170B2 (en) | 1989-10-26 | 1989-10-26 | Method for forming polymer film in which semiconductor ultrafine particles are dispersed |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27718889A JP2819170B2 (en) | 1989-10-26 | 1989-10-26 | Method for forming polymer film in which semiconductor ultrafine particles are dispersed |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03140335A true JPH03140335A (en) | 1991-06-14 |
| JP2819170B2 JP2819170B2 (en) | 1998-10-30 |
Family
ID=17580034
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP27718889A Expired - Fee Related JP2819170B2 (en) | 1989-10-26 | 1989-10-26 | Method for forming polymer film in which semiconductor ultrafine particles are dispersed |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2819170B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5955528A (en) * | 1996-07-04 | 1999-09-21 | Fuji Xerox Co., Ltd. | Polymeric composite material and process for manufacturing the same |
| US5963360A (en) * | 1993-02-12 | 1999-10-05 | Fuji Xerox Co., Ltd. | Nonlinear optical element and process for the preparation of same |
-
1989
- 1989-10-26 JP JP27718889A patent/JP2819170B2/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5963360A (en) * | 1993-02-12 | 1999-10-05 | Fuji Xerox Co., Ltd. | Nonlinear optical element and process for the preparation of same |
| US5955528A (en) * | 1996-07-04 | 1999-09-21 | Fuji Xerox Co., Ltd. | Polymeric composite material and process for manufacturing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2819170B2 (en) | 1998-10-30 |
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