JPH03132047A - High frequency heater for semiconductor device sealing - Google Patents
High frequency heater for semiconductor device sealingInfo
- Publication number
- JPH03132047A JPH03132047A JP26917989A JP26917989A JPH03132047A JP H03132047 A JPH03132047 A JP H03132047A JP 26917989 A JP26917989 A JP 26917989A JP 26917989 A JP26917989 A JP 26917989A JP H03132047 A JPH03132047 A JP H03132047A
- Authority
- JP
- Japan
- Prior art keywords
- high frequency
- synthetic resin
- sealing
- resin body
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000007789 sealing Methods 0.000 title claims abstract description 24
- 239000004065 semiconductor Substances 0.000 title claims description 16
- 229920003002 synthetic resin Polymers 0.000 claims abstract description 35
- 239000000057 synthetic resin Substances 0.000 claims abstract description 35
- 238000010438 heat treatment Methods 0.000 claims abstract description 19
- 229920005989 resin Polymers 0.000 abstract description 14
- 239000011347 resin Substances 0.000 abstract description 14
- 239000000126 substance Substances 0.000 abstract 6
- 238000009434 installation Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 239000002689 soil Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
Landscapes
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Abstract
Description
【発明の詳細な説明】
(産業上の利用分野)
本発明は、樹脂封止型の半導体装置の製造過程で使用さ
れ、封止用の合成樹脂体のプレヒートを行う加熱装置に
適用できる半導体装置樹脂封止用の高周波加熱装置に関
する。Detailed Description of the Invention (Industrial Field of Application) The present invention relates to a semiconductor device that is used in the manufacturing process of a resin-sealed semiconductor device and is applicable to a heating device that preheats a synthetic resin body for sealing. This invention relates to a high frequency heating device for resin sealing.
(従来の技術)
従来、樹脂対IF型の半導体装置は、金属製のリードフ
レームの所定位置に半導体素子をマウントし、この半導
体素子とリードフレームとの間をワイヤーボンディング
によりAu細線で電気的に接続した後、エポキシ樹脂に
より樹脂封止を行い、外形が形成される。(Prior Art) Conventionally, in a resin-to-IF type semiconductor device, a semiconductor element is mounted at a predetermined position on a metal lead frame, and the semiconductor element and the lead frame are electrically connected using a thin Au wire by wire bonding. After connection, resin sealing is performed using epoxy resin, and the outer shape is formed.
樹脂対1ヒエ程は、温度175℃に熱せられた上下一対
の金型の前記ワイヤーボンド済のリードフレームをセッ
トし、封止金型に設けられたポット内に封止用の合成樹
脂体を入れ、プランジャで加圧して前記金型に設けられ
たキャビティに樹脂を圧送し、加圧、加熱することによ
り行われる。そして前記合成樹脂体は、ポットの内へ投
入される前に、成形時間の短縮、成形品質の向上などの
目的のため、予め高周波加熱手段によりプレヒートされ
るのが一般的である。For one resin pair, set the wire-bonded lead frames in a pair of upper and lower molds heated to a temperature of 175°C, and place a synthetic resin body for sealing in a pot provided in the sealing mold. This is done by pressurizing the mold with a plunger to forcefully feed the resin into a cavity provided in the mold, and then pressurizing and heating the resin. The synthetic resin body is generally preheated by high-frequency heating means before being put into the pot for the purpose of shortening molding time and improving molding quality.
第3図は従来のブレヒート用の高周波加熱装置を示す樋
成図であって、11は円柱状の合成樹脂体、12a、
12bは表面が樹脂コートされ、かつ平行に配置された
一対の回動可能なローラ電極、13はローラ電極12a
、 12bの上方に配置された金属板よりなる上部電極
、14は前記ローラ電極12a、 12bと上部電極1
3との間に、70M[(z程度の高周波電圧を印加する
高周波電源である。FIG. 3 is a diagram showing a conventional high-frequency heating device for breheating, in which 11 is a cylindrical synthetic resin body, 12a,
12b is a pair of rotatable roller electrodes whose surfaces are coated with resin and arranged in parallel; 13 is a roller electrode 12a;
, 12b is an upper electrode made of a metal plate arranged above the roller electrodes 12a, 12b and the upper electrode 1.
This is a high frequency power supply that applies a high frequency voltage of about 70M[(z) between the
同図において、被加熱物の合成樹脂体11をローラ電極
12a、 12bの間に載置し、一方のローラ電極12
aを矢印15の方向に回転させ、高周波電圧を印加する
と、高周波電流16が破線のように流れ、合成樹脂体1
1はローラ電極12aの回転に従い、矢印17の方向に
回転しながら均一に加熱される。In the figure, a synthetic resin body 11 of the object to be heated is placed between roller electrodes 12a and 12b, and one roller electrode 12 is placed between roller electrodes 12a and 12b.
When a is rotated in the direction of the arrow 15 and a high frequency voltage is applied, a high frequency current 16 flows as shown by the broken line, and the synthetic resin body 1
1 is uniformly heated while rotating in the direction of arrow 17 according to the rotation of roller electrode 12a.
(発明が解決しようとする課題)
上記の従来装置において、円柱状の合成樹脂体11を横
倒しした状態でローラ電極12a、 12bに載置させ
るため、合成樹脂体11をローラ電極12a、 12b
に載置する際、および加熱完了後の合成樹脂体11を取
出す際のハンドリングが煩雑であり、また封1#−,金
型に設けられたポットに合成樹脂体11を投入する際は
、合成樹脂体11を縦方向に立てる必要があり、合成樹
脂体11の前記ポットへの投入作業を複雑にするという
問題があった。(Problems to be Solved by the Invention) In the conventional device described above, in order to place the cylindrical synthetic resin body 11 on the roller electrodes 12a, 12b in a sideways state, the synthetic resin body 11 is placed on the roller electrodes 12a, 12b.
The handling is complicated when placing the synthetic resin body 11 on the mold and when taking out the synthetic resin body 11 after heating is completed. It is necessary to stand the resin body 11 vertically, which poses a problem of complicating the operation of putting the synthetic resin body 11 into the pot.
本発明の目的は、柱状の封止用の合成樹脂体の設置、取
出しの作業性を向上させた半導体装置樹脂封止用の高周
波加熱装置を提供することにある。SUMMARY OF THE INVENTION An object of the present invention is to provide a high-frequency heating device for resin-sealing a semiconductor device, which improves the workability of installing and removing a columnar synthetic resin body for sealing.
(課題を解決するための手段)
上記の[1的を達成するため、本発明は、半導体素子の
外部を樹脂封止する合成樹脂を加熱する半導体装置樹脂
対11―用の高周波加熱装置において、回転可能な載置
台に、柱状の封止用の合成樹脂体を長平方向が直立する
ように載置し、前記封止用の合成樹脂体の側部に対向さ
せて加熱用の高周波電極を設けたことを特徴とする。(Means for Solving the Problems) In order to achieve the above object [1], the present invention provides a high-frequency heating device for a semiconductor device resin pair 11- that heats a synthetic resin for resin-sealing the outside of a semiconductor element. A column-shaped synthetic resin body for sealing is placed on a rotatable mounting table so that its elongated direction is upright, and a high-frequency electrode for heating is provided facing the side of the synthetic resin body for sealing. It is characterized by:
(作 用)
上記の手段を採用したため、柱状の封止用の合成樹脂体
を載置台に長手方向が直立した状態で、高周波電極で均
一に加熱でき、また合成樹脂体の載置台への設置および
取出しは、合成樹脂体の直立状態でできるために容易に
なされる。(Function) By adopting the above method, the columnar synthetic resin body for sealing can be heated uniformly with the high frequency electrode while the longitudinal direction is upright on the mounting table, and the synthetic resin body can be heated evenly on the mounting table. And, since the synthetic resin body can be taken out in an upright state, it can be easily taken out.
(実施例) 以上1本発明の実施例を図面に基づいて説明する。(Example) An embodiment of the present invention will be described above based on the drawings.
第1図は本発明の半導体装置樹脂封止用の高周波加熱装
置の一実施例を示す断面図、第2図は第1図の実施例の
セット前の状態を示す断面図であって、1は一体、2は
柱状の封止用の合成樹脂体、3は回転可能で、かつ一体
1に対して上下動可能な載置台、4は載置台3の支軸5
に設けられたフランジ、6a、6bは一体1の内部に相
対向して配置された加熱用の高周波電極、7は高周波電
源である。FIG. 1 is a cross-sectional view showing an embodiment of a high-frequency heating device for resin-sealing a semiconductor device according to the present invention, and FIG. 2 is a cross-sectional view showing the state of the embodiment shown in FIG. 1 before being set. 2 is a column-shaped synthetic resin body for sealing, 3 is a mounting table that is rotatable and movable up and down with respect to the integrated unit 1, and 4 is a support shaft 5 of the mounting table 3.
Flanges 6a and 6b are provided in the unit 1, and numeral 7 is a high-frequency power source for heating, which is placed facing each other inside the unit 1.
第1図、第2図において、柱状の合成樹脂体2は長手方
向が直立するように載置台3に載1αされ。In FIGS. 1 and 2, a columnar synthetic resin body 2 is placed 1α on a mounting table 3 so that its longitudinal direction is upright.
合成樹脂体2の左右の側部にそれぞれ配置された高周波
電極6a、6bには高周波電源7より高周波電圧が印加
されるようになっており、前記載置台:3は高周波損失
は極く少ない材質で形成されている。A high-frequency voltage is applied from a high-frequency power source 7 to high-frequency electrodes 6a and 6b arranged on the left and right sides of the synthetic resin body 2, respectively, and the mounting table 3 is made of a material with extremely low high-frequency loss. It is formed of.
また前記載置台3は支軸5の上下動かつ回動に伴なって
上下動かつ回動し、フランジ4は支軸5の上下動に伴な
い上下動し、かつ回動が支軸5に対して自由であるよう
に設けられており、一体1は高周波の漏洩を防ぐ金属材
よりなる。Further, the mounting table 3 moves up and down and rotates with the up and down movement and rotation of the support shaft 5, and the flange 4 moves up and down with the up and down movement of the support shaft 5, and the rotation is caused by the up and down movement of the support shaft 5. The unit 1 is made of a metal material that prevents leakage of high frequency waves.
第2図において、載置台3に直立状態で載置された合成
樹脂体2は、支軸5の上昇により第1図のセット位置、
すなわち高周波電極6a、6bの間の略中央に位置する
。前記支軸5の上昇によりフランジ4も上昇し、上昇動
の最終端で一体1の底部に接し、一体1と合せて高周波
漏洩防!ヒの作用を行う。In FIG. 2, the synthetic resin body 2 placed upright on the mounting table 3 is moved to the set position in FIG. 1 by raising the support shaft 5.
That is, it is located approximately at the center between the high frequency electrodes 6a and 6b. As the support shaft 5 rises, the flange 4 also rises, and touches the bottom of the integral part 1 at the final end of its upward movement, which together with the integral part 1 prevents high frequency leakage! Performs the action of hi.
第1図において、支軸5を回動することにより載置台3
を回動させ、続いて高周波電極6a、 6bの間に高周
波電源7より高周波を印加する。高周波電流8は破線の
ように高周波電極6a、6bの間を合成樹脂体2を通し
て流れ、合成樹脂体2を急速に加熱することになる。In FIG. 1, by rotating the support shaft 5, the mounting table 3 is
Then, a high frequency is applied from a high frequency power source 7 between the high frequency electrodes 6a and 6b. The high frequency current 8 flows through the synthetic resin body 2 between the high frequency electrodes 6a and 6b as shown by the broken line, and rapidly heats the synthetic resin body 2.
図示しないタイマ、あるいは赤外線温度調節計により、
所定温度に合成樹脂体2が加熱されて、軟化した状態で
、前記高周波電圧の供給が停止され、支軸5の回転が停
止すると共に下降し、第2図のセット前の状態になる。By a timer (not shown) or an infrared temperature controller,
When the synthetic resin body 2 is heated to a predetermined temperature and softened, the supply of the high frequency voltage is stopped, and the rotation of the support shaft 5 is stopped and lowered, resulting in the state before setting as shown in FIG. 2.
上述のように本実施例では、合成樹脂体2を長平方向が
直立した状態で載置台3に設置したり、取出すことがで
きるので作業性がよく、しかも加熱終了後に、封1ヒ金
型に設けられたポットに挿入する際にも、合成樹脂体2
の方向を変える必要がなく、樹脂封1ト工程の自動化を
容易する。As mentioned above, in this embodiment, the synthetic resin body 2 can be placed on and taken out from the mounting table 3 with its longitudinal direction upright, which improves workability. When inserting the synthetic resin body 2 into the provided pot,
There is no need to change the direction of the resin sealing process, making it easy to automate the resin sealing process.
なお、載置台3を一体1に対して吊り下げた状態に設け
てもよい。Note that the mounting table 3 may be provided in a suspended state with respect to the unit 1.
(発明の効果)
本発明によれば、柱状の封1ヒ用の合成樹脂体を、載置
台に対して長手方向が直立した状態で設置したり、取出
すことができ、作業性の向上が図れる半導体装置樹脂対
土用の高周波加熱装置を提供できる。(Effects of the Invention) According to the present invention, the columnar synthetic resin body for sealing can be installed and taken out with its longitudinal direction upright with respect to the mounting table, and workability can be improved. It is possible to provide a high-frequency heating device for semiconductor device resin-to-soil.
第1図は本発明による半導体装置樹脂対土用の高周波加
熱装置の一実施例を示す断面図、第2図は第1図の実施
例のセット前の状態を示す断面図、第3図は従来の高周
波加熱装置を示す構成図である。
1 ・・・一体、 2・・・合成樹脂体、・・・載置台
、 4 ・・・ フランジ、 5支軸、 6a、 6b
・・高周波電極、・・・品周波′6i源。FIG. 1 is a cross-sectional view showing an embodiment of the high-frequency heating device for semiconductor device resin and soil according to the present invention, FIG. 2 is a cross-sectional view showing the state of the embodiment shown in FIG. 1 before setting, and FIG. FIG. 2 is a configuration diagram showing a conventional high-frequency heating device. 1... Integral, 2... Synthetic resin body,... Mounting table, 4... Flange, 5 Support shaft, 6a, 6b
... High frequency electrode, ... Product frequency '6i source.
Claims (2)
する半導体装置樹脂封止用の高周波加熱装置において、
回転可能な載置台に、柱状の封止用の合成樹脂体を長手
方向が直立するように載置し、前記封止用の合成樹脂体
の側部に対向させて加熱用の高周波電極を設けたことを
特徴とする半導体装置樹脂封止用の高周波加熱装置。(1) In a high-frequency heating device for resin-sealing a semiconductor device that heats a synthetic resin for resin-sealing the outside of a semiconductor element,
A column-shaped synthetic resin body for sealing is placed on a rotatable mounting table so that its longitudinal direction is upright, and a high-frequency electrode for heating is provided opposite to the side of the synthetic resin body for sealing. A high-frequency heating device for resin-sealing semiconductor devices, characterized in that:
請求項(1)記載の半導体装置樹脂封止用の高周波加熱
装置。(2) The high-frequency heating device for resin-sealing a semiconductor device according to claim (1), wherein the mounting table is movable up and down.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP26917989A JPH03132047A (en) | 1989-10-18 | 1989-10-18 | High frequency heater for semiconductor device sealing |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP26917989A JPH03132047A (en) | 1989-10-18 | 1989-10-18 | High frequency heater for semiconductor device sealing |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH03132047A true JPH03132047A (en) | 1991-06-05 |
Family
ID=17468780
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP26917989A Pending JPH03132047A (en) | 1989-10-18 | 1989-10-18 | High frequency heater for semiconductor device sealing |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH03132047A (en) |
-
1989
- 1989-10-18 JP JP26917989A patent/JPH03132047A/en active Pending
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