JPH03129733A - Cleaning apparatus for falky article - Google Patents

Abstract

PURPOSE:To prevent dust particles from adhering to the surface of a semiconduc tor wafer again by providing a partition wall which is installed in a cleaning tank and which separates a place used to throw a flaky article in a treatment liquid from a place used to take the article from the treatment liquid. CONSTITUTION:A semiconductor wafer 15 before a treatment is thrown into a throwing-in side 5a, of a first water treatment liquid 5 (hydrofluoric acid), which is separated by a partition wall 40a. During this process, dust particles 16 which have adhered to the semiconductor wafer 15 are cleaned and removed. Simultaneously with this, a spontaneous oxide film is removed from the surface of the semiconductor wafer 15 by using the hydrofluoric acid; at the same time, also a foreign body which has adhered is removed. The dust particles 16 are collected on the surface of the first wafer treatment liquid 5 on the throwing-in side 5a. After that, the semiconductor wafer 15 is passed under the partition wall 40a and is taken out from a taking-out side 5b of the first wafer treatment liquid 5. Since the surface on the taking-out side 5b of the first wafer treatment liquid 5 is not contaminated at this time, the dust particles do not adhere to the semiconductor wafer 15.

Description

[Detailed Description of the Invention] [Field of Industrial Application] This invention relates to a cleaning device for flaky articles,
In particular, the present invention relates to a cleaning device for flaky articles that has been improved to prevent dust from re-adhering to flaky articles that have been treated with a treatment liquid.

[Prior Art] Flake-like articles, such as semiconductor wafers, usually have dust and the like attached to them, so they need to be cleaned.

FIG. 5 is a perspective view of a conventional cleaning device used for cleaning semiconductor wafers, and FIG.
FIG.

Referring to these figures, the cleaning apparatus includes a first wafer processing tank 20, a second wafer processing tank 21, and a third wafer processing #g22. The first wafer processing tank 20 is arranged in the first drainage tank 29a, the second wafer processing tank 21 is arranged in the second drainage tank 29b, and the third wafer processing tank 22 is arranged in the third drainage tank 29a. It is arranged in the drainage t629c of. First drainage tank 29a, second drainage tank 29b, and third drainage tank t62
9c is integrally constructed as a drainage Ie29.

A first wafer processing solution 5 is introduced into the first wafer processing tank 20 , a second wafer processing solution 6 is introduced into the second wafer processing tank 21 , and a third wafer processing solution 6 is introduced into the third wafer processing tank 22 . A third wafer processing liquid 7 is introduced into the wafer.

A drain port 30 is provided in the first drain tank 29a, and a drain pipe 33 is connected to the drain port 30. The drain pipe 33 is provided with a drain valve 9a.

Similarly, the second drain tank 29b is provided with a drain port 31, and a drain pipe 34 is connected to the drain port 31. The drain pipe 34 is provided with a drain valve 9b. Also, the third
The drain tank 29c is provided with a drain port 32.
A drain pipe 35 is connected to the drain pipe 35. The drain pipe 35 is provided with a water valve 9c.

The first wafer processing tank 20 is provided with a supply port 26, and a first wafer processing liquid supply pipe for introducing the first wafer processing liquid 5 into the first wafer processing tank 20 into the supply port 26. 2
3 is connected. A supply valve lla is attached to the first wafer processing liquid supply pipe 23. Similarly, the second
The wafer processing tank 21 is provided with a supply port 27, and the supply port 27 is provided with a second wafer processing #f! A second wafer processing liquid supply pipe 24 for introducing the second wafer processing liquid 6 into J21 is connected. Second wafer processing liquid supply pipe 2
A supply valve llb is attached to 4. Further, the third wafer processing tank 22 is provided with a supply port 28 for introducing the third wafer processing liquid 7 into the third wafer processing tank 22. Processing liquid supply pipe 2
5 is connected. A supply valve 11C is attached to the third wafer processing liquid supply pipe 25.

At the bottom of the first wafer processing tank 20, a tank f! A J liquid mist outlet 8a is arranged. For the same purpose, a processing liquid mist outlet 8b is provided at the bottom of the second wafer processing tank 21. Further, for the same purpose, a processing liquid mist outlet 8C is provided at the bottom of the third wafer processing tank 22.

Next, the operation of cleaning semiconductor wafer using a conventional cleaning device will be explained. FIG. 7 is an enlarged view of the first wafer processing tank 20.

First, a semiconductor wafer is treated with sulfuric acid, nitric acid, etc.
Remove metal and organic impurities from the surface. At this time, a natural oxide film of 20 to 30A is formed on the surface of the semiconductor wafer.
It is formed. The apparatus shown in FIG. 5 removes this natural oxide film, and at the same time, also cleans and removes particles adhering to the surface of the semiconductor wafer. This will be explained in detail below.

With reference to FIGS. 5 and 6, the first wafer processing tank 2
0, pure water is introduced into the second wafer processing tank 21, and hydrogen peroxide solution is introduced into the third wafer processing tank 22.

First, the unprocessed semiconductor wafer is transferred to the wafer processing tank 2 of the first stage.
Insert within 0. At this time, the seat plate attached to the semiconductor wafer is cleaned and removed. At the same time, the natural oxide film formed on the surface of the semiconductor wafer is removed by the action of hydrofluoric acid, and at the same time, foreign matter adhering to the surface is also removed.

After that, the semiconductor wafer is transported into the second processing tank 21,
Here, the hydrofluoric acid treatment liquid adhering to the surface of the semiconductor wafer is washed away.

Thereafter, the semiconductor wafer is transported into a third treatment a22, where the surface of the semiconductor wafer is rendered hydrophilic. The reason why the surface of the semiconductor wafer is made hydrophilic is to prevent pure water from remaining isolated on the surface of the semiconductor wafer when the surface of the semiconductor wafer is washed with water. Furthermore, by making the surface of the semiconductor wafer hydrophilic, the surface becomes inert and re-adhesion of dust and the like is prevented.

[Problems to be Solved by the Invention] Since the conventional device was configured as described above, there were the following problems. That is, referring to FIG. 7 (an enlarged view of the first wafer processing tank), when the semiconductor wafer 15 is put into the first processing liquid 5, the semiconductor wafer 1
The dust 16 attached to the surface of the first wafer processing liquid 5 is adsorbed to the surface of the first wafer processing liquid 5. Therefore, the surface of the first wafer processing liquid 5 is contaminated with dust 16.

In this state, when the semiconductor urchin'\15 is taken out from the first processing liquid 5, it passes through the same surface as when the wafer was introduced, so
There was a problem in that the dust 16 re-adhered to the surface of the semiconductor wafer 15.

Further, when the semiconductor wafer 15 is taken out from the first processing liquid 5, the semiconductor wafer 15 is exposed to the outside air, and the surface thereof is oxidized. Furthermore, when the semiconductor wafer 15 comes into contact with the outside air, there is another problem in that dust in the outside air re-adheres to the surface.

Therefore, an object of the present invention is to provide an improved method to prevent dust from re-adhering to flaky articles treated with a treatment liquid.
An object of the present invention is to provide a cleaning device for flaky articles.

[Means for Solving the Problems] The present invention relates to a washing device for flaky articles, which cleans flaky articles by putting the flaky articles into a processing liquid ψ and then taking them out from the processing liquid. It is something. The device is provided in at least one cleaning tank for storing the processing liquid and at least one of the cleaning tanks, and includes a place for introducing the flaky article into the processing solution and a place for processing the flaky article. A partition wall separates the place from which the liquid is taken out from the liquid.

According to a preferred embodiment of the present invention, at least two adjacent cleaning tanks are provided, and the cleaning tank is provided between the at least two adjacent cleaning tanks, so that the connection from one cleaning tank to the other cleaning tank is provided. When moving the flaky article,
A passage chamber is provided for passing the flaky article without exposing it to outside air. And in the above passage room,
Preferably, it is filled with an inert gas.

[Function] According to the apparatus according to the present invention, at least one cleaning tank for storing a processing liquid is provided, and at least one of the cleaning tanks is provided, and the flaky article is thrown into the processing liquid. Since the device is equipped with a partition wall that separates a place where the flaky article is removed from the processing liquid and a place where the flaky article is taken out from the processing liquid, when the semiconductor sea urchin '\
Dust will not re-adhere to the surface.

[Embodiments] Examples of the present invention will be shown below, but the present invention is not limited thereto.

FIG. 1 is a partially cutaway perspective view of a cleaning device according to an embodiment of the present invention, and FIG. 2 is a cross-sectional view taken along the line ■-■ in FIG.

Referring to these figures, the cleaning apparatus according to the embodiment includes a first wafer processing tank 20, a second wafer processing tank 21, and a third wafer processing tank 22. First wafer processing 120
A water tank 10a drains the liquid from the side 5a into which the semiconductor wafer is introduced, and a side 5b from which the semiconductor wafer is taken out from the processing liquid.
A drainage tank 10b is provided to drain the liquid. The second wafer processing tank 21 is arranged inside the drain tank 10c. The third wafer processing tank 22 includes a drain tank 10d that drains the liquid from which semiconductor wafers are introduced, and a drain tank 10e that drains the liquid from which semiconductor wafers are taken out from the processing liquid.

The first wafer processing tank 20 is provided with a partition wall 40a that separates a place where semiconductor wafers are put into the processing liquid and a place where the semiconductor wafers are taken out from the processing liquid. A partition wall 40b is provided in the second wafer processing unit 21 for the same purpose. The third wafer processing tank 22 is provided with a partition "J40c" for the same purpose. Partition walls 40a, 40b, 4
0c is a space 3 formed by partition walls 40a and 40b.
a and the space 3b formed by the partition walls 40b and 400
A blocking frame 41 is provided for blocking the outside from the outside. The drain tank 10a is provided with a drain port 14a.
A drain pipe 33a is connected to the drain pipe 33a.

A drain valve 9a is provided in the drain pipe 33a. Similarly, the water tank 10b is provided with a drain port 14b, and a drain pipe 33b is connected to the drain port 14b. A drain valve 9b is provided in the drain pipe 33b. Further, the drain tank 10c is provided with a drain port 14c.
A drain pipe 34 is connected to the drain pipe 34. The drain pipe 34 is provided with a drain valve 9C. A drain port 14d is provided in the drain layer 10d, and a drain pipe 35a is connected to the drain port 14d. The drain pipe 35H is provided with a drain valve 9d. The drain tank 10e is provided with a drain port 14e, and a drain pipe 35b is connected to the drain port 14e. A drain valve 9e is provided in the drain pipe 35b.

The first wafer processing tank 20 is provided with an RJT supply port 26, and the supply port 26 is provided with a first wafer processing liquid for introducing the first wafer processing liquid 5 into the first wafer processing tank 20. A supply pipe 23 is connected. A supply valve 11 a is attached to the first wafer processing liquid supply pipe 23 .

A supply port 27 is provided in the second wafer processing WJ21,
A second wafer processing liquid supply pipe 24 for introducing the second wafer processing liquid 6 into the second wafer processing tank 21 is connected to the supply port 27 . Second wafer processing liquid supply pipe 2
4 is attached with a supply valve 11b.

The third wafer processing tank 22 is provided with a supply port 28 , and the supply port 28 is provided with a third wafer processing liquid supply for introducing the third wafer processing liquid 7 into the third wafer processing tank 22 . A pipe 25 is connected. Third wafer processing liquid supply pipe 25
A supply valve 11C is attached to the.

At the bottom of the first wafer processing tank 20, a processing liquid mist outlet 8a is arranged for uniformly supplying the first wafer processing liquid 5 entering the tank through the supply port 26. Similarly, at the bottom of the second wafer processing tank 21, a processing liquid mist outlet 8b is arranged. At the bottom of the third wafer processing tank 22,
A processing liquid mist outlet 8C is arranged.

A supply pipe for supplying nitrogen gas into the space 3a and a 9% supply pipe for supplying nitrogen gas into the space 3b are connected to the cutoff frame 41, and each is provided with a nitrogen valve 4a and a nitrogen valve 4b.

Next, the operation of cleaning a semiconductor wafer using the apparatus according to the embodiment will be described. FIG. 3 is an enlarged view of the first wafer processing tank 20 in FIG.

Referring to FIG. 2, hydrofluoric acid is introduced into the first wafer processing tank 20, pure water is introduced into the second wafer processing tank 21,
Hydrogen peroxide solution is introduced into the third wafer processing tank 22 .

In addition, by operating the nitrogen valve 4a14b, the space 3a, 3
bl'( is filled with nitrogen.

With the cleaning apparatus in the above-described state, first, referring to FIG. )
into the input side 5a.

At this time, the dust 16 attached to the semiconductor wafer 15 is cleaned and removed. At the same time, the natural oxide film is removed from the surface of the semiconductor wafer 15 using hydrofluoric acid.1. At the same time, attached foreign matter is also removed. The dust 16 collects on the surface of the first wafer processing liquid 5 on the input side 5a.

Thereafter, the semiconductor wafer 15 is passed under the partition wall 40a and taken out from the first wafer processing liquid 5 takeout side 5b. At this time, since the surface of the extraction side 5b of the first wafer processing liquid 5 is not contaminated, no dust adheres to the semiconductor wafer 15.

Next, referring to FIG. 2, the semiconductor wafer is transported into the space 3a. Since the space 3aF'-1 is filled with nitrogen, unnecessary reactions do not occur on the surface of the semiconductor wafer 15.

Thereafter, the semiconductor wafer 15 is placed into the second wafer processing liquid 6 (pure water) introduced into the second wafer processing tank 21 . Here, the semiconductor wafer 15 is washed with water. In the embodiment, the second wafer processing tank 21 is also divided by a partition wall 40b for the same purpose.

Next, the semiconductor wafer 15 is transferred from the second wafer processing tank 21 into the space 3b. Since the space 3b is filled with nitrogen, reactions on the surface of the semiconductor wafer 15 are suppressed and dust is prevented from adhering to the surface of the semiconductor wafer.

Thereafter, the semiconductor wafer 15 is placed in hydrogen peroxide, which is the third wafer processing liquid 7, introduced into the third wafer processing tank 22. Here, the surface of the semiconductor wafer 15 is made hydrophilic. In the example, the third wafer processing tW2
2 is also divided by a partition wall 40c for the same purpose.

Next, the means for transporting semiconductor wafers will be described.

FIG. 4A is a plan view of the conveyance section of the cleaning device shown in FIG. 1;
FIG. 4B is a front view thereof, and FIG. 4C is a side view thereof.

Referring to these figures, 41 is a blocking frame, and blocking frame 4
A conveyance drive section 37 is provided on the outside of the conveyance drive section 1 . A transport window 38 is provided in the blocking frame 41, and the transport arm 36
is connected to the conveyance drive section 37 through this conveyance window 38. The semiconductor wafer is held and transported by the transport arm 36.

[Effects of the Invention] As explained above, according to the present invention, at least one cleaning tank for storing a processing liquid is provided, and the flaky article is further provided in the at least one cleaning tank, and the flaky article is contained in the processing liquid. The device is equipped with a partition that separates the place where the flaky articles are stacked and the place where the flakes are taken out from the processing solution, so that when the processed semiconductor wafer is taken out from the processing solution, dust does not collect on the surface of the semiconductor wafer. Does not reattach. As a result, when a semiconductor device or the like is formed using a processed semiconductor wafer, the yield is improved and a highly reliable semiconductor device can be obtained.

[Brief explanation of the drawing]

FIG. 1 is a perspective view of a cleaning device according to an embodiment of the present invention. FIG. 2 is a sectional view taken along the line ■-■ in FIG. 1. FIG. 3 is a diagram showing the operation of cleaning a semiconductor wafer using the apparatus according to the embodiment. FIG. 4A is a plan view of a semiconductor wafer conveying means provided in the apparatus according to the embodiment, FIG. 4B is a front view thereof, and FIG. 4C is a side view thereof. FIG. 5 is a perspective view of a conventional cleaning apparatus for flaky articles. FIG. 6 is a sectional view taken along the line V[-Vl in FIG. 5. FIG. 7 is a diagram showing the operation of cleaning a semiconductor wafer using a conventional cleaning apparatus for flaky articles. In the figure, 5 is the first wafer processing liquid, 5a is the wafer input side, 5b is the wafer take-out side, 15 is the semiconductor wafer,
20 is a first wafer processing tank, and 40a is a partition wall. In each figure, the same reference numerals indicate the same or corresponding parts. Agent Masuo Oishi Figure 3 5a: Wafer transfer 911 5b: 67e 8 it Note 1l1 15: Cow conductor Waeha

Claims (1)

[Scope of Claims] A washing device for a flaky article, which cleans a flaky article by putting the flaky article into a processing liquid and then taking it out from the processing liquid, the apparatus storing the processing liquid. at least one cleaning tank; and a partition wall provided in the at least one cleaning tank and separating a place where the flaky article is put into the processing liquid and a place where the flaky article is taken out from the processing liquid. A cleaning device for flaky articles, comprising: