JPH03124A - Vacuum treating device - Google Patents
Vacuum treating deviceInfo
- Publication number
- JPH03124A JPH03124A JP12885289A JP12885289A JPH03124A JP H03124 A JPH03124 A JP H03124A JP 12885289 A JP12885289 A JP 12885289A JP 12885289 A JP12885289 A JP 12885289A JP H03124 A JPH03124 A JP H03124A
- Authority
- JP
- Japan
- Prior art keywords
- vacuum processing
- processing chamber
- temperature
- atmosphere
- cooled
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000003507 refrigerant Substances 0.000 claims abstract description 5
- 238000012545 processing Methods 0.000 claims description 87
- 238000010438 heat treatment Methods 0.000 claims description 11
- 238000001816 cooling Methods 0.000 claims description 9
- 238000004891 communication Methods 0.000 claims description 3
- 238000009489 vacuum treatment Methods 0.000 abstract 7
- 239000007789 gas Substances 0.000 description 11
- 238000005530 etching Methods 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000012423 maintenance Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- 238000009529 body temperature measurement Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- -1 etc. Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野
本発明は、真空処理装置に係り、特に半導体素子基板等
の試料を０℃以下の温度でエツチング。DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention relates to a vacuum processing apparatus, particularly for etching samples such as semiconductor element substrates at temperatures below 0°C.
成膜、改質等の真空処理するのに好適な真空処理装置に
関するものである。The present invention relates to a vacuum processing apparatus suitable for vacuum processing such as film formation and modification.
半導体素子基板等の試料を０℃以下の温度で真空処理す
る装置としては、例えば、特開昭６３−１４１３１８号
公報に記載のようなものが知られている。As an apparatus for vacuum processing a sample such as a semiconductor element substrate at a temperature of 0 DEG C. or lower, there is known, for example, the apparatus described in Japanese Patent Application Laid-Open No. 141318/1983.
試料が０℃以下の温度で真空処理される真空処理室内を
、何等かの理由、例えば、メンテナンス等により、例え
ば、大気開放する必要が生じた場合、この状態、つまり
、真空処理室内の被冷却手段が０℃以下の温度を保持し
た状態で真空処理室内を大気開放すると上記被冷却手段
に大気中の水分が霜または露となって付着し、このため
、真空処理室内を再び所定圧力に減圧排気するのが困難
となり容易に所定圧力に減圧排気できな曵なろ。If for some reason, such as maintenance, it becomes necessary to open the inside of the vacuum processing chamber where the sample is vacuum processed at a temperature below 0°C to the atmosphere, this state, that is, the cooled object in the vacuum processing chamber If the inside of the vacuum processing chamber is opened to the atmosphere while the temperature of the means is kept below 0°C, moisture in the atmosphere will adhere to the means to be cooled as frost or dew, and as a result, the inside of the vacuum processing chamber will be reduced to the predetermined pressure again. It will be difficult to evacuate the gas and it will not be possible to easily reduce the pressure to the specified pressure.
これを防止するためには、上記被冷却手段を大気中の水
分の露点温度以上の温度に温度復帰させれば良いが、し
かし、上記被冷却手段が大気中の水分の露点温度以上の
温度に温度復帰する以前に真空処理室内が大気開放させ
られるといった誤操作を生じる危険性があった。In order to prevent this, the temperature of the cooled means should be returned to a temperature higher than the dew point temperature of moisture in the atmosphere. There was a risk of an erroneous operation in which the vacuum processing chamber was opened to the atmosphere before the temperature returned.
しかしながら、上記従来技術では、このような問題につ
いては、何等、配慮がされていない。However, in the above-mentioned prior art, no consideration is given to such problems.
本発明の主な目的は、安全、確実、かつ、容易に真空処
理室内を減圧排気できる真空処理装置を提供することに
ある。A main object of the present invention is to provide a vacuum processing apparatus that can safely, reliably, and easily evacuate the inside of a vacuum processing chamber.
上記主な目的は、低温真空処理装置を、真空処理室と、
該真空処理室内で温度０℃以下に冷却される手段と、該
被冷却手段を加温する手段と、前記被冷却手段の温度を
検知し該検知温度が前記真空処理室外部の雰囲気ガスの
露点温度以上になった時点で前記真空処理室内外を連通
可能とさせる手段とを具備したものとすることにより、
達成される。The main purpose of the above is to convert the low temperature vacuum processing equipment into a vacuum processing chamber,
a means for cooling the vacuum processing chamber to a temperature of 0° C. or lower; a means for heating the cooling means; and a means for detecting the temperature of the cooling means and determining whether the detected temperature is the dew point of the atmospheric gas outside the vacuum processing chamber. By providing means for enabling communication between the inside and outside of the vacuum processing chamber when the temperature reaches or above,
achieved.
冷却手段により真空処理室内の被冷却手段、例えば、試
料台、試料固定手段、試料搬送、保持手段、真空処理室
内壁等は、０℃以下の温度に冷却される。真空処理室内
と真空処理室外雰囲気とを連通させる必要が生じた場合
、例えば、メンテナンス等により真空処理室内を大気開
放させる必要が生じた場合、加温手段により上記被冷却
手段は加温される。このように加温されている被冷却手
段の温度は、真空処理室内外連通手段により検知される
。該検知温度が、真空処理室外部の雰囲気ガスの露点温
度以上の温度、例えば、大気中の水分の露点温度以上の
温度になった時点で上記真空処理室内外連通手段により
真空処理室内は真空処理室外と連通可能、例えば、真空
処理室内は大気開放可能とされ、真空処理室内は大気開
放される。The cooling means cools the means to be cooled in the vacuum processing chamber, such as the sample stage, sample fixing means, sample transport and holding means, and the inner wall of the vacuum processing chamber, to a temperature of 0° C. or lower. When it becomes necessary to communicate the vacuum processing chamber with the atmosphere outside the vacuum processing chamber, for example, when it becomes necessary to open the vacuum processing chamber to the atmosphere due to maintenance or the like, the cooling means is heated by the heating means. The temperature of the heated means to be cooled is detected by means for communicating between the outside and outside of the vacuum processing chamber. When the detected temperature reaches a temperature higher than the dew point temperature of the atmospheric gas outside the vacuum processing chamber, for example, a temperature higher than the dew point temperature of moisture in the atmosphere, the vacuum processing chamber is started to undergo vacuum processing by the vacuum processing chamber outside communication means. It is possible to communicate with the outside, for example, the vacuum processing chamber can be opened to the atmosphere, and the inside of the vacuum processing chamber can be opened to the atmosphere.
このように、真空処理室内と真空処理室外雰囲気とを連
通させる必要が生じた場合、真空処理室内の被冷却手段
の温度が真空処理室外雰囲気ガスの露点温度以上の温度
になったことを確認して、その後、真空処理室内を真空
処理室外雰囲気と連通させるようにしているので、被冷
却手段が真空処理室外雰囲気ガスの露点温度以上の温度
に温度復帰する以前に真空処理室内が真空処理室外雰囲
気と連通させられるといった誤操作を生じる危険性を排
除でき、また、これと共に、被冷却手段への真空処理室
外雰囲気ガスの結露、結霜な防止できるので、真空処理
室内を再び所定圧力に減圧排気する上での困難性を除去
できる。In this way, when it becomes necessary to communicate the vacuum processing chamber with the atmosphere outside the vacuum processing room, it is necessary to confirm that the temperature of the means to be cooled inside the vacuum processing chamber has reached a temperature higher than the dew point temperature of the atmospheric gas outside the vacuum processing room. After that, the vacuum processing chamber is made to communicate with the atmosphere outside the vacuum processing room, so that the vacuum processing chamber is connected to the outside atmosphere of the vacuum processing room before the temperature of the means to be cooled returns to the dew point temperature or higher of the atmospheric gas outside the vacuum processing room. It is possible to eliminate the risk of erroneous operation such as being connected to the cooling device, and at the same time, it is possible to prevent dew and frost formation of the atmospheric gas outside the vacuum processing chamber on the means to be cooled, so that the vacuum processing chamber can be decompressed and evacuated to the predetermined pressure again. The above difficulties can be removed.
以下、本発明の一実施例を！１図により説明する。 Below is an example of the present invention! This will be explained using Figure 1.
第１図は、本発明によるプラズマエツチング装置の構成
図で、処理室１は、試料、例えば、半導体素子基板（以
下、ウェハと略）（図示省略）のエツチングを行う場所
でウェハは試料台２上に設置される。エツチング時には
エツチングガス導入配管５よりエツチング時スが処理室
１に導入され、排気は排気配管９．排気バルブ１０．排
気ポンプ１１により行われる。試料台２には、この場合
、高周波電源３が接続されているまた、試料台２にはつ
エバを冷却するため冷媒供給配管４により、例えば、液
体窒素（ＬＮ２）が供給される。温度測定器６のセンサ
部分は試料台２および試料台２の冷却により低温化する
部位に取付けられる。FIG. 1 is a configuration diagram of a plasma etching apparatus according to the present invention, in which a processing chamber 1 is a place where a sample, for example, a semiconductor element substrate (hereinafter abbreviated as a wafer) (not shown) is etched, and a wafer is placed on a sample stage 2. installed on top. During etching, the etching gas is introduced into the processing chamber 1 through the etching gas introduction pipe 5, and the gas is exhausted from the exhaust pipe 9. Exhaust valve 10. This is done by the exhaust pump 11. In this case, a high frequency power source 3 is connected to the sample stage 2, and liquid nitrogen (LN2), for example, is supplied to the sample stage 2 through a refrigerant supply pipe 4 to cool the vapor. The sensor portion of the temperature measuring device 6 is attached to the sample stage 2 and a portion of the sample stage 2 whose temperature decreases due to cooling.
第１図で、例えば、メンテナンス等により処理室１を大
気開放する場合は先ずＧＮ２バルブ７を關け、ヒータ８
により加熱されたＧＮ２を処理室に供給する。この加熱
ＧＮ２により処理室ｌ内を昇温゛させる。処理室ｌ内で
温度低下したＧＮ２は排気配管９、排気バルブ１０．排
気ポンプＵにより排出される。In FIG. 1, for example, when opening the processing chamber 1 to the atmosphere for maintenance etc., first turn on the GN2 valve 7, then turn on the heater 8.
The heated GN2 is supplied to the processing chamber. This heating GN2 causes the temperature inside the processing chamber 1 to rise. The GN2 whose temperature has decreased in the processing chamber 1 is discharged from the exhaust pipe 9 and the exhaust valve 10. It is exhausted by exhaust pump U.
この加熱ＧＮ２により処理室１内の温度が、大気開放時
に霜又は露の付着のない温度に達したことを温度測定Ｈ
６が検出し、電磁弁１４を動作させ。Temperature measurement H indicates that the temperature inside the processing chamber 1 has reached a temperature at which frost or dew does not adhere when it is opened to the atmosphere due to this heating GN2.
6 is detected and the solenoid valve 14 is operated.
シリンダニ３によりロヅク機構認を解除させる。このロ
ック機構化の解除により処理室フタ巧が開けられる。Cylinder key 3 releases the Lozuku mechanism recognition. By releasing this locking mechanism, the processing chamber lid can be opened.
本実施例によれば、処理室のロック機構を有するため、
処理室内が低置状態で大気開放することにより処理室内
に霜又は露を付着させることはない。また、加熱ＧＮ、
の導入により処理室内の昇温か短時間で可能となる。According to this embodiment, since the processing chamber has a locking mechanism,
By keeping the processing chamber low and open to the atmosphere, frost or dew will not build up inside the processing chamber. In addition, heating GN,
By introducing this, it becomes possible to raise the temperature inside the processing chamber in a short time.
本実施例は、処理室のロック機構を付加したものである
が、フタ開閉機構の有するものは、その動作に対しイン
ターロックをとっても良い。In this embodiment, a locking mechanism for the processing chamber is added, but the lid opening/closing mechanism may have an interlock for its operation.
なお、上記−実施例では、加熱ＧＮ２により加温されて
いる試料台の温度を温度測定器で測定、検知し、該検知
温度が大気中の水分の露点温度以上になった時点で電磁
弁を作動させシリンダによりロック機構を解除させて処
理室フタを開ける、つまり、処理室内を大気開放させる
ようにしているが、これに替えて、上記検知温度が大気
中の水分の露点温度以上になるまで処理室フタを開ける
操作、つまり、処理室内の大気開放に対して警告を発す
るように構成することもでき、この場合も、上記一実施
例の場合と同様の効果が得られる。即ち、メンテナンス
等により処理室内を大気開放させる必要が生じた場合、
処理室内のＬＮ２ の寒冷により冷却された試料台の加
温ＧＮ２による加温時の温度が大気中の水分の露点濃度
以上の温度になったことを確認して、その後、処理室内
を大気開放させるようにしているので、試料台が大気中
の水分の露点温度以上の温度になる以前に処理室内が大
気開放されるといった誤操作を生じる危険性を排除でき
、また、これと共に、試料台への大気中の水分の結露、
結霜な防止できるので、排気ポンプにより処理室内を再
び所定圧力に減圧排気する上での困難性を除去できる。In the above embodiment, the temperature of the sample stage heated by the heating GN2 is measured and detected by a temperature measuring device, and when the detected temperature becomes equal to or higher than the dew point temperature of moisture in the atmosphere, the solenoid valve is turned on. The cylinder is activated to release the locking mechanism and open the processing chamber lid, in other words, to open the processing chamber to the atmosphere. It can also be configured to issue a warning when the processing chamber lid is opened, that is, when the processing chamber is opened to the atmosphere, and in this case as well, the same effect as in the above embodiment can be obtained. In other words, if it becomes necessary to open the processing chamber to the atmosphere due to maintenance, etc.,
Confirm that the temperature of the sample stage cooled by the cold LN2 in the processing chamber when heated by GN2 is higher than the dew point concentration of moisture in the atmosphere, and then open the processing chamber to the atmosphere. This eliminates the risk of erroneous operation such as opening the processing chamber to the atmosphere before the sample stage reaches the dew point temperature of moisture in the atmosphere. Condensation of moisture inside
Since frost formation can be prevented, it is possible to eliminate the difficulty in evacuating the inside of the processing chamber to a predetermined pressure again using an exhaust pump.
従って、これらにより、安全、確実、かつ、容易に処理
室内を減圧排気することができる。Therefore, with these, the inside of the processing chamber can be evacuated under reduced pressure safely, reliably, and easily.
上記一実施例での他に、次のような場合においても良好
に適用し得る。In addition to the above embodiment, the present invention can also be effectively applied to the following cases.
（１）試料台以外に処理室内に温度０℃以下に冷却され
ろ部品を有する場合
（２） プラズマを利用および該プラズマを利用せず
に試料のエツチング、成膜、改質処理等の真空処理を試
料を温度０℃以下に冷却して実施する装置を用いる場合
また、上記一実施例では、試料台をＬＮ２の寒冷噸こよ
り冷却するようにしているが、冷媒としては、ＬＮ２の
他に液化ツブ素糸化合物、液化炭化水素。(1) When the processing chamber has parts other than the sample stand that are cooled to a temperature of 0°C or below. (2) Vacuum processing such as etching, film formation, and modification processing of the sample using plasma and without using plasma. When using an apparatus that cools the sample to a temperature of 0°C or less, in the above embodiment, the sample stage is cooled with LN2 cryogen, but in addition to LN2, liquefied Tubu filament compound, liquefied hydrocarbon.
液体ヘリウム等やこれら冷媒で冷却されたガスや液体等
を使用し得る。いずれにしても処理室内の被冷却手段は
、Ｏ′ｃ以下の温度に冷却される。Liquid helium, etc., or gases or liquids cooled with these refrigerants may be used. In any case, the cooled means in the processing chamber is cooled to a temperature below O'c.
また、上記一実施例では、試料台の温度回復に加熱ＧＮ
ｔを使用しているが、この他に、発熱体、例えば、電熱
ヒータを試料台に設け、該発熱体の発熱によりＩＫ料台
の濃度回復を図るように構成しても良い。In addition, in the above embodiment, heating GN is used to recover the temperature of the sample stage.
In addition to this, a heating element such as an electric heater may be provided on the sample stage, and the concentration of the IK specimen stage may be recovered by the heat generated by the heating element.
また、上記一実施例では、処理室内を大気開放するよう
にしているが、処理室内を大気とは異なる雰囲気に開放
し連通）するように構成されていても良い。Further, in the above embodiment, the inside of the processing chamber is opened to the atmosphere, but the inside of the processing chamber may be configured to be opened to and communicated with an atmosphere different from the atmosphere.
本発明によれば、外部雰囲気と連通させられた真空処理
室内を安全、確実、かつ、容易に減圧排気できる効果が
ある。According to the present invention, there is an effect that the inside of the vacuum processing chamber which is communicated with the external atmosphere can be safely, reliably, and easily depressurized and evacuated.
第１図は、本発明の一実施例のプラズマエツチングｍｌ
の構成図である。
１・・・・・・処理室、２・・・・・・試料台、４・・
・・・・冷媒供給配管、５・・・・・・エツチングガス
導入配管、６・・・・・・温度測定器、８・・・・・・
ヒータ、９・・・・・・排気配管、１１・・・排気ポン
プ、セ・・・・・・ロック機構、１３・・・・・・シリ
ンダ、′；４１目
！
１ｓ−−−一匁９里室７りFIG. 1 shows plasma etching ml of an embodiment of the present invention.
FIG. 1...Processing chamber, 2...Sample stand, 4...
... Refrigerant supply pipe, 5 ... Etching gas introduction pipe, 6 ... Temperature measuring device, 8 ...
Heater, 9... Exhaust piping, 11... Exhaust pump, Center... Lock mechanism, 13... Cylinder, '; 41st! 1s --- 1 momme 9 ri room 7ri
Claims (1)
却される手段と、該被冷却手段を加温する手段と、前記
被冷却手段の温度を検知し該検知温度が前記真空処理室
外部の雰囲気ガスの露点温度以上になった時点で前記真
空処理室内外を連通可能とさせる手段とを具備したこと
を特徴とする真空処理装置。 ２、前記被冷却手段と、前記真空処理室内で試料を保持
すると共に前記冷却手段で温度０℃以下に冷却される試
料保持手段とし、前記連通手段を、前記試料保持手段の
温度を検知し該検知温度が前記真空処理室外部の大気中
の水分の露点温度以上になった時点で前記真空処理室内
を大気可能とさせる手段とする第１請求項に記載の真空
処理装置。 ３、前記試料保持手段の検知温度が前記水分の露点濃度
以上になるまで前記真空処理室内の大気開放をロックす
る手段を前記大気開放手段が備えた第２請求項に記載の
真空処理装置。 ４、前記試料保持手段の検知温度が前記水分の露点温度
以上になるまで前記真空処理室内の大気開放に対して警
告を発する手段を前記大気開放手段が備えた第２請求項
に記載の真空処理装置。 ５、真空処理室と、該真空処理室内で試料を保持する手
段と、該試料保持手段に０℃以下の温度を有する冷媒を
供給する手段と、前記試料保持手段を加温する手段と、
前記試料保持手段の温度を検知する手段と、前記真空処
理室の大気開放開口を閉塞する手段と、該開口閉塞手段
による前記開口の閉塞を機械的にロックする手段と、前
記検知温度が前記大気中の水分の露点温度以上になった
時点で前記ロック手段によるロックを解除する手段とを
具備したことを特徴とする真空処理装置。[Claims] 1. A vacuum processing chamber, a means for cooling the vacuum processing chamber to a temperature of 0° C. or less, a means for heating the means to be cooled, and a means for detecting the temperature of the means to be cooled and detecting the temperature of the means to be cooled. 1. A vacuum processing apparatus, comprising means for enabling communication between the inside and outside of the vacuum processing chamber when the detected temperature becomes equal to or higher than the dew point temperature of atmospheric gas outside the vacuum processing chamber. 2. The means to be cooled is a sample holding means that holds the sample in the vacuum processing chamber and is cooled to a temperature of 0° C. or less by the cooling means, and the communicating means is configured to detect the temperature of the sample holding means and detect the temperature of the sample holding means. 2. The vacuum processing apparatus according to claim 1, further comprising means for making the interior of the vacuum processing chamber open to the atmosphere when the detected temperature becomes equal to or higher than the dew point temperature of moisture in the atmosphere outside the vacuum processing chamber. 3. The vacuum processing apparatus according to claim 2, wherein the atmosphere opening means includes means for locking the atmosphere from being opened in the vacuum processing chamber until the detected temperature of the sample holding means becomes equal to or higher than the dew point concentration of the moisture. 4. The vacuum processing according to claim 2, wherein the atmosphere opening means includes means for issuing a warning against opening the vacuum processing chamber to the atmosphere until the detected temperature of the sample holding means becomes equal to or higher than the dew point temperature of the moisture. Device. 5. a vacuum processing chamber, means for holding a sample in the vacuum processing chamber, means for supplying a refrigerant having a temperature of 0° C. or less to the sample holding means, and means for heating the sample holding means;
means for detecting the temperature of the sample holding means; means for closing the atmosphere opening of the vacuum processing chamber; means for mechanically locking the opening by the opening closing means; 1. A vacuum processing apparatus comprising: means for releasing the lock by the locking means when the temperature reaches a dew point temperature or higher of moisture contained therein.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12885289A JP2786249B2 (en) | 1989-05-24 | 1989-05-24 | Vacuum processing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12885289A JP2786249B2 (en) | 1989-05-24 | 1989-05-24 | Vacuum processing equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03124A true JPH03124A (en) | 1991-01-07 |
| JP2786249B2 JP2786249B2 (en) | 1998-08-13 |
Family
ID=14994970
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12885289A Expired - Lifetime JP2786249B2 (en) | 1989-05-24 | 1989-05-24 | Vacuum processing equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2786249B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102010020768A1 (en) | 2009-05-19 | 2010-11-25 | Kabushiki Kaisha Toshiba | Electromagnetic flowmeter |
| US7895902B2 (en) | 2008-01-15 | 2011-03-01 | Kabushiki Kaisha Toshiba | Electromagnetic flow meter including circumferential grooves on an inner surface of a measurement pipe for fixing a liner |
| US8082803B2 (en) | 2008-05-28 | 2011-12-27 | Kabushiki Kaisha Toshiba | Electromagnetic flow meter having a cut groove formed in the flange for holding the liner in position |
-
1989
- 1989-05-24 JP JP12885289A patent/JP2786249B2/en not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7895902B2 (en) | 2008-01-15 | 2011-03-01 | Kabushiki Kaisha Toshiba | Electromagnetic flow meter including circumferential grooves on an inner surface of a measurement pipe for fixing a liner |
| US8082803B2 (en) | 2008-05-28 | 2011-12-27 | Kabushiki Kaisha Toshiba | Electromagnetic flow meter having a cut groove formed in the flange for holding the liner in position |
| DE102010020768A1 (en) | 2009-05-19 | 2010-11-25 | Kabushiki Kaisha Toshiba | Electromagnetic flowmeter |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2786249B2 (en) | 1998-08-13 |
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