JPH03121186A - Agent for polishing surface of hard and brittle material - Google Patents

Agent for polishing surface of hard and brittle material

Info

Publication number
JPH03121186A
JPH03121186A JP1258566A JP25856689A JPH03121186A JP H03121186 A JPH03121186 A JP H03121186A JP 1258566 A JP1258566 A JP 1258566A JP 25856689 A JP25856689 A JP 25856689A JP H03121186 A JPH03121186 A JP H03121186A
Authority
JP
Japan
Prior art keywords
polishing
hard
organic
bromine
brittle materials
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1258566A
Other languages
Japanese (ja)
Inventor
Yoshihiko Kunimitsu
国光 嘉彦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tosoh Silica Corp
Original Assignee
Nippon Silica Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Silica Industrial Co Ltd filed Critical Nippon Silica Industrial Co Ltd
Priority to JP1258566A priority Critical patent/JPH03121186A/en
Publication of JPH03121186A publication Critical patent/JPH03121186A/en
Pending legal-status Critical Current

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  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

PURPOSE:To obtain the title polishing agent which can minimize an adverse effect on the working environment, can reduce the corrosion of a polishing device, and is improved in the polishing action on a surface of a hard and brittle material, handleability, etc., by dissolving a specified halogenated organic nitrogen compound in an organic solvent. CONSTITUTION:An organonitrogen halide compound of the formula (wherein R<1> to R<4> are each an organic group; X is Cl or Br) (e.g. polybrominated stearylbenzyldimethylammonium) is dissolved in an organic solvent (e.g. methanol) and, if necessary, the obtained solution is mixed with 0.5-7% fine hard particles insoluble therein (e.g. precipitated silica) having a mean particle diameter of 0.01-10mum to give the title polishing agent. A hard and brittle material comprising a semiconductor crystal of a compound such as GaAs, GaP or InP is polished in a polishing device by using the polishing agent.

Description

【発明の詳細な説明】 (産業上の利用分野) 本発明は、固体表面の研磨剤、特にGaAs(砒化ガリ
ウム)、GaP (燐化ガリウム)やInP(燐化イン
ジウム)のような化合物半導体結晶等の硬脆材料を高能
率かつ無じよう乱鏡面に研磨するための化学研磨剤、あ
るいはメカノケミカル研磨剤に関するものである。
Detailed Description of the Invention (Field of Industrial Application) The present invention is a polishing agent for solid surfaces, particularly compound semiconductor crystals such as GaAs (gallium arsenide), GaP (gallium phosphide) and InP (indium phosphide). The present invention relates to a chemical polishing agent or a mechanochemical polishing agent for polishing hard and brittle materials such as those with high efficiency to a non-irregular mirror surface.

(従来の技術) 従来、GaAs、GaPやInPのような化金物半導体
結晶基板の研磨(ポリッシング)は、通常、研磨剤を滴
下しながら輪型研磨機等の研磨装置により適当な研磨圧
力で表面を研磨することで行なうものであり、高い研磨
能率、加工表面の精密鏡面を確保するために、エツチン
グ作用を有する塩素((:JZz)、臭素(Brz)の
無機酸化性物質の水溶液による酸化溶解や、臭素とメタ
ノールの混合溶液を研磨剤として用いることが知られて
いる。
(Prior Art) Conventionally, in the polishing of chemical semiconductor crystal substrates such as GaAs, GaP, and InP, the surface is usually polished using a polishing device such as a ring polisher while dropping an abrasive to an appropriate polishing pressure. In order to ensure high polishing efficiency and a precise mirror finish on the processed surface, oxidation and dissolution using an aqueous solution of inorganic oxidizing substances such as chlorine ((:JZz) and bromine (Brz)), which have an etching effect, are performed. It is known that a mixed solution of bromine and methanol is used as an abrasive.

そしてこれらの方法により、組成、濃度の選択と加工技
術によって優れた研磨性能が得られている。
With these methods, excellent polishing performance has been obtained through selection of composition, concentration, and processing technology.

(発明が解決しようとする課題) しかし前記従来の研磨(ポリッシング)技術においては
、薬剤が不安定であるとか、加工に用いる機器等の材質
によって腐食の問題を考慮しなければならないという問
題がある他、加工罪囲気が人体に悪影響する虞れがある
ことから、作業環境の対策に負担がかかるという問題が
あった。
(Problems to be Solved by the Invention) However, in the conventional polishing technology, there are problems such as the instability of the chemicals and the problem of corrosion depending on the material of the equipment used for processing. In addition, there was a problem in that it was a burden to take measures to improve the working environment, as there was a risk that the processing atmosphere would have an adverse effect on the human body.

例えば上記研磨剤として臭素−メタノールの混合溶液を
使用する場合には、調製した研磨剤混合溶液が調製後十
分たらずで分解するため、研磨作業の都度溶液の調製が
必要であるという作業能率上の難がある。
For example, when a mixed solution of bromine and methanol is used as the above-mentioned polishing agent, the prepared mixed solution of the polishing agent decomposes shortly after preparation, so it is necessary to prepare the solution each time polishing work is performed, which is a problem in work efficiency. There is a problem.

またこの研磨剤溶液は、微量とは言っても臭素ガスの発
生が避けられないので、実際の工業的な設備においては
人体に有毒で刺激が強い臭素ガスを使用する作業環境を
考慮して、ガスシール対策や排気を十分に配慮した設備
を設けることが必要になる。しかも臭素ガスは金属を腐
食する作用が強いために研磨装置を構成する材料が限定
され、装置を構成するための機構的、構造的な要求を満
足できる材料選択と、耐腐食性の点からの材料選択の要
求とを同時に満足することが容易でなく、設備の高コス
ト化や設備耐久性の低下、短寿命性という問題があった
In addition, this abrasive solution inevitably generates bromine gas, albeit in a small amount, so in actual industrial equipment, we take into account the working environment where bromine gas, which is toxic and irritating to the human body, is used. It is necessary to install equipment that takes gas sealing measures and exhaust into consideration. Moreover, since bromine gas has a strong effect of corroding metals, the materials that can be used to construct polishing equipment are limited. It is not easy to satisfy the requirements for material selection at the same time, and there have been problems such as increased equipment costs, decreased equipment durability, and shortened lifespan.

(課題を解決するための手段) 本発明は以上のような従来の研磨剤の問題点を解消し、
硬脆材料の表面研磨剤としての優れた作用を有し、しか
も取扱い性に優れ、作業環境への悪影響が少なく、装置
を構成する材料に対する腐食性が可及的に減少されるこ
とによフて、使用設備の材料的な選択範囲が広くかつ耐
久性に優れた装置を構成することができる、新規な硬脆
材料の表面研磨剤を提供することを目的としてなされた
ものである。
(Means for Solving the Problems) The present invention solves the problems of conventional abrasives as described above,
It has an excellent effect as a surface abrasive for hard and brittle materials, is easy to handle, has little negative impact on the working environment, and is free by reducing corrosivity to the materials that make up the equipment as much as possible. The purpose of this invention is to provide a novel surface abrasive for hard and brittle materials that allows for a wide selection of materials for equipment used and allows the construction of highly durable equipment.

また本発明の別の目的は、研磨剤として安定であるため
、従来の研磨剤のような使用直前での調製という作業を
必要とせず、したがって研磨作業の手順を能率よく設計
できる研磨剤を提供するところにある。
Another object of the present invention is to provide an abrasive that is stable as an abrasive and does not require preparation immediately before use unlike conventional abrasives, and therefore enables efficient design of polishing work procedures. It's there.

かかる目的を実現するためになされた本発明よりなる硬
脆材料の表面研磨剤の特徴は、例えば下記−数式(I)
で表わされる第4アンモニウムの多ハロゲン化物類、 R’ R” R3R’ N” X−・・・・(I)(た
だしRl 、 R2、R3、R4はいずれも有機基、X
は塩素又は臭素) あるいは下記−数式(II )で表わされるハロゲン化
カルボン酸イミド類 (R−CO)iNX       ・・・・(II)(
ただしRはアルキレン基、Xは塩素又は臭素である)。
The characteristics of the surface abrasive for hard and brittle materials according to the present invention, which has been made to achieve the above object, are as follows, for example: Formula (I)
Quaternary ammonium polyhalides represented by R'R'' R3 R'N''
is chlorine or bromine) or halogenated carboxylic acid imide (R-CO) iNX represented by the following formula (II)... (II) (
However, R is an alkylene group and X is chlorine or bromine).

を有効成分とするところにある。またこの研磨剤中に、
該有機溶液中で溶解しない硬質微粒子を含んだ研磨剤を
、メカノケミカル作用を有する特に有効なものとして例
示することができる。この場合、これらの硬質粒子は0
.01〜lOμm程度の平均粒子径のものを、研磨液中
の含有量として0.5〜7%程度含有させることが適当
である場合が多い。
The active ingredient is Also, in this abrasive,
An example of a particularly effective abrasive having a mechanochemical action is an abrasive containing hard fine particles that do not dissolve in the organic solution. In this case, these hard particles are 0
.. In many cases, it is appropriate to include particles having an average particle diameter of about 0.01 to 10 μm in an amount of about 0.5 to 7% in the polishing liquid.

これらの有機窒素ハロゲン化物類を溶解する有機溶媒と
しては、例えばメタノール、エタノール、エチレングリ
コール、アセトン、塩化メチレン、4塩化炭素、ベンゼ
ンを例示することができる。
Examples of organic solvents that dissolve these organic nitrogen halides include methanol, ethanol, ethylene glycol, acetone, methylene chloride, carbon tetrachloride, and benzene.

上記において、例えば第4アンモニウムの多臭素化物類
を製造するには、第4アンモニウムの塩素塩あるいは臭
素塩(RI R2R3R4N” )M 、ただしR’、
R2,R3,R’  XLt上記と同じ)と、亜臭素酸
ナトリウム(NaBr02)を反応させることによって
得ることができる。すなわち、第4アンモニウムの塩素
塩(あるいは臭素塩)をアルカリ性の水に溶解し、これ
に亜臭素酸ナトリウムの水溶液を加えて無機又は有機酸
を添加して酸性とすることにより多臭素化第4アンモニ
ウム塩を沈殿として遊離生成させ、この沈殿物を分離、
洗浄等して生成することにより純粋な多臭素化第4アン
モニウム塩を得ることができる。また多臭素化第4アン
モニウム塩は、上記第4アンモニウムの塩素塩あるいは
臭素塩と、臭素、又は酸性溶液中で遊離臭素を発生する
化合物を液相中で反応させることによって得ることもで
き、上記方法に用いる第4アンモニウムの塩素塩あるい
は臭素塩として具体的には、一般に試薬あるいは界面活
性剤などとして市販されているもの、例えばステアリル
ベンジルジメチルアンモニウムハロゲン塩、ベンジルト
リメチルアンモニウムハロゲン塩、テトラブチルアンモ
ニウムハロゲン塩等を例示することができる。
In the above, for example, in order to produce polybrominated products of quaternary ammonium, a chlorine salt or a bromine salt of quaternary ammonium (RI R2R3R4N") M, where R',
It can be obtained by reacting R2, R3, R' XLt (same as above) with sodium bromite (NaBr02). That is, a chlorine salt (or bromine salt) of quaternary ammonium is dissolved in alkaline water, an aqueous solution of sodium bromite is added thereto, and an inorganic or organic acid is added to make the polybrominated quaternary ammonium acidic. The ammonium salt is produced as a precipitate, and this precipitate is separated.
A pure polybrominated quaternary ammonium salt can be obtained by washing or the like. The polybrominated quaternary ammonium salt can also be obtained by reacting the chlorine or bromine salt of the quaternary ammonium with bromine or a compound that generates free bromine in an acidic solution in a liquid phase. Specifically, quaternary ammonium chlorine or bromine salts used in the method include those that are generally commercially available as reagents or surfactants, such as stearylbenzyldimethylammonium halide salt, benzyltrimethylammonium halide salt, and tetrabutylammonium halide. Examples include salt and the like.

他方、上記ハロゲン化カルボン酸イミド類としては、例
えばN−ブロモこはく酸イミド等を具体的に例示するこ
とができ、被加工物の種類、加工の程度等にもよるが、
−数的にはこれを上記有機溶媒に0.2〜5重量%程度
の範囲で溶解させて研磨液を調製することが適当である
場合が多い。
On the other hand, specific examples of the halogenated carboxylic acid imides include N-bromosuccinimide, etc., and depending on the type of workpiece, degree of processing, etc.
- Numerically, it is often appropriate to prepare a polishing liquid by dissolving this in the above-mentioned organic solvent in a range of about 0.2 to 5% by weight.

本発明の研磨剤が適用される硬脆材料としては、代表的
には上述したGaAs、GaP。
Hard and brittle materials to which the abrasive of the present invention is applied typically include the above-mentioned GaAs and GaP.

InPが例示されるが、特にこれに限定されるものでは
ない。
An example is InP, but the material is not particularly limited thereto.

(発明の効果) 本発明の研磨剤は、前記の構成をなすことによって、従
来の研磨剤と同様に硬脆材料の研磨剤として優れた作用
を発揮すると共に、人体に対する害がなく、しかも安定
で高品位、高能率に研磨作業を行なうことができるとい
う効果があり、特にGaAs、GaP、I nP等の化
合物半導体結晶の硬脆材料の表面研磨に優れた効果を発
揮するという利点がある。
(Effects of the Invention) By having the above structure, the abrasive of the present invention exhibits an excellent effect as an abrasive for hard and brittle materials like conventional abrasives, is harmless to the human body, and is stable. It has the advantage of being able to perform polishing work with high quality and high efficiency, and is particularly effective in polishing the surface of hard and brittle materials such as compound semiconductor crystals such as GaAs, GaP, and InP.

(実 施 例) 以下本発明の研磨剤の調製法、研磨剤による研磨方法の
実施例について説明するが、本発明の前記並びにその他
の課題と新規な特徴は、以下の説明により一層明かとな
るであろう。
(Example) Examples of the preparation method of the abrasive and the polishing method using the abrasive of the present invention will be described below, but the above and other problems and novel features of the present invention will become clearer from the following explanation. Will.

実施例1 ステアリルベンジルジメチルアンモニウムクロライドC
Cl8H37C7Ht(CHs)2N”Cl1− 、商
品名サニゾールB−50.花王社製]の純分0.5 m
ail (212g)を水300a+JZに溶解し、ま
た1、5 mail (I20g>の工業用臭素(東ソ
ー社製)を濃度lO%の力性ソーダ700nlに溶解し
て、これらの両溶液の全量を常温で混合した。混合溶液
は析出物はなく、均質な溶液でpH13,8のアルカリ
性であった。
Example 1 Stearylbenzyldimethylammonium chloride C
Cl8H37C7Ht(CHs)2N"Cl1-, trade name Sanisol B-50. Manufactured by Kao Corporation] purity 0.5 m
ail (212g) was dissolved in water 300a + JZ, and 1.5 mail (I20g> industrial bromine (manufactured by Tosoh Corporation) was dissolved in 700nl of strength soda with a concentration of 10%, and the total amount of both solutions was brought to room temperature. The mixed solution had no precipitates, was homogeneous, and had an alkaline pH of 13.8.

この溶液を攪拌しながら、20%の酢酸水溶液を徐々に
加えてpHを低下させ、pH11〜9で黄褐色の沈殿物
を生成させた。更に酢酸溶液を加え pH4まで低下さ
せ、その後沈殿を濾過し、水で洗浄した後、50℃に保
って乾燥機で乾燥し、多臭素化第4アンモニウム塩であ
る。多臭素化ステアリルベンジルジメチルアンモニウム
(以下r 5BDA−nBr」と略記する)310gを
得た。
While stirring this solution, a 20% acetic acid aqueous solution was gradually added to lower the pH, and a yellowish brown precipitate was formed at pH 11-9. Further, an acetic acid solution was added to lower the pH to 4, and the precipitate was then filtered, washed with water, kept at 50° C., and dried in a drier to obtain a polybrominated quaternary ammonium salt. 310 g of polybrominated stearylbenzyldimethylammonium (hereinafter abbreviated as "r5BDA-nBr") was obtained.

これは無臭の黄褐色固形物であり、反応結合臭素38%
を含み、約50℃で溶融し、水には不溶であるが苛性ソ
ーダなどのpH10,5以上としたアルカリ性の水には
溶解し、メタノール、エタノール、塩化メチレンなどの
有機溶媒に可溶である。また常温で長期の保存もでき、
変質1分解は認められなかった。
It is an odorless tan solid with 38% reactively bound bromine.
It melts at about 50°C, is insoluble in water, but soluble in alkaline water with a pH of 10.5 or higher, such as caustic soda, and soluble in organic solvents such as methanol, ethanol, and methylene chloride. It can also be stored for long periods at room temperature.
No alteration 1 decomposition was observed.

研磨液の調製 上記により得たSBDへ−nBrを、メタノールに溶解
して下記第1表の濃度2.7%(試験No 1 ) 。
Preparation of polishing liquid The SBD-nBr obtained above was dissolved in methanol to a concentration of 2.7% (Test No. 1) as shown in Table 1 below.

1.4%(試験No 2 )の研磨液を調製した。また
有機溶媒をエタノールに代えて0.7%の濃度のSBD
^−nBr研磨液(試験No3)を調製した。
A 1.4% (Test No. 2) polishing liquid was prepared. In addition, SBD with a concentration of 0.7% was used instead of ethanol as the organic solvent.
A ^-nBr polishing liquid (Test No. 3) was prepared.

さらに(試験No 2 )の研磨液に平均粒子径1.3
μmの沈殿シリカ「ニップシールE −743J(日本
シリカニ業社製)を3.5%含有させてスラリー状の研
磨スラリー液(試験No4)を調製した。
Furthermore, the polishing liquid of (Test No. 2) had an average particle size of 1.3.
A slurry-like polishing slurry liquid (Test No. 4) was prepared by containing 3.5% of μm precipitated silica "Nip Seal E-743J (manufactured by Nippon Silikani Gyo Co., Ltd.).

研磨 厚さ0.7+nmLf)G a A s単結晶基板を1
5mm角に切断し、直径100mmの接着プレート(7
50g)に3枚を等間隔に接着した。また研磨機(小型
平面研磨装置;コバルミ子社製FPM−30)の定盤(
直径300mm)にポリウレタン含浸ポリエステル不織
布ボリッシャを貼り、上記接着プレートを該ボリッシャ
上に設置した。
Polishing thickness 0.7+nmLf)G a As single crystal substrate 1
Cut into 5 mm squares and use adhesive plates with a diameter of 100 mm (7
50g), three sheets were glued at equal intervals. Also, the surface plate (
A polyurethane-impregnated polyester nonwoven fabric volisher (diameter: 300 mm) was applied to the volister, and the adhesive plate was placed on the volisher.

次に各々の研磨液を滴下しながら修正輪型研磨機により
、定盤回転数60rpm 、研磨圧力107g/clQ
2、研磨液供給量in/hrの条件で、上記GaAs基
板を30分間研磨した。
Next, while dropping each polishing liquid, the polishing was performed using a modified wheel type polisher at a surface plate rotation speed of 60 rpm and a polishing pressure of 107 g/clQ.
2. The above GaAs substrate was polished for 30 minutes under the condition that the polishing liquid supply amount was in/hr.

研磨液の濃度、組成、研磨条件と、研磨の結果得られた
研磨面の状態をまとめて下記第1表に示した。
The concentration and composition of the polishing liquid, the polishing conditions, and the condition of the polished surface obtained as a result of polishing are summarized in Table 1 below.

また上記と同様にして、下記により製造した多臭素化テ
トラブチルアンモニウム(以下r TBA−nBrjと
略記する)を用いて研磨液(試験No5)を調製し、上
記と同様に研磨試験を行なりてその結果を下記第1表に
示した。
In addition, in the same manner as above, a polishing liquid (test No. 5) was prepared using polybrominated tetrabutylammonium (hereinafter abbreviated as rTBA-nBrj) produced as follows, and a polishing test was conducted in the same manner as above. The results are shown in Table 1 below.

r TBA−norの製゛ テトラブチルアンモニウムブロマイド[C4H9)4 
N” Br−;キシダ化学社製試薬]64g(0,2m
of ) 、臭化ナトリウム(NaBr;関東化学社製
試薬)35g、臭素酸ナトリウム(NaBros;関東
化学社製試薬)10gをpH13に調整した苛性ソーダ
水溶液200m1に溶解し、常温で攪拌しながら酢酸1
0%の水溶液を徐々に滴下した。pH10〜9に低下し
たところで褐色の沈殿が生成し、更に酢酸水溶液を加え
てpH3まで低下させて反応を終了した。この懸濁液に
塩化メチレン100mftを加えて懸濁物を塩化メチレ
ンに溶解させ、水層と分離した。塩化メチレン溶液を水
洗した後50℃に加温することで塩化メチレンを留去し
、生成物としてr TBA−nBr」の92gを得た。
r Production of TBA-nor ``Tetrabutylammonium bromide [C4H9)4
N” Br-; reagent manufactured by Kishida Chemical Co., Ltd.] 64 g (0.2 m
of ), 35 g of sodium bromide (NaBr; reagent manufactured by Kanto Kagaku Co., Ltd.), and 10 g of sodium bromate (NaBros; reagent manufactured by Kanto Kagaku Co., Ltd.) were dissolved in 200 ml of a caustic soda aqueous solution adjusted to pH 13, and 1 ml of acetic acid was added with stirring at room temperature.
A 0% aqueous solution was gradually added dropwise. A brown precipitate was formed when the pH decreased to 10 to 9, and an acetic acid aqueous solution was further added to lower the pH to 3 to complete the reaction. 100 mft of methylene chloride was added to this suspension, the suspension was dissolved in methylene chloride, and the aqueous layer was separated. After washing the methylene chloride solution with water, the methylene chloride was distilled off by heating to 50° C. to obtain 92 g of “rTBA-nBr” as a product.

分析の結果、この物質は結合臭素47%を含み、水に不
溶であるがpH10,5以上のアルカリ水溶液及び有機
溶媒には溶解し、更に室温で保存するかぎり変質しなか
った。
As a result of analysis, this substance contained 47% of bound bromine, was insoluble in water, but soluble in alkaline aqueous solutions and organic solvents with a pH of 10.5 or more, and did not change in quality as long as it was stored at room temperature.

第  1  表 第1表の結果から明らかであるように、本発明の各実施
例においては、研磨加工時に刺激性のガスの発生もなく
、そのうえ装置の金属材料の腐食の心配もなく、極め、
て穏やかな加工作業を行なうことができた。また研磨性
能については、従来−数的な水溶液型の研磨剤と比較し
ても、研磨速度は速く、研磨後の研磨面も高品質であっ
た。更に、微粒子物質の併用によって研磨剤の品位が向
上し、一般に使用されている研磨剤の性能と比較しても
優れた研磨状態が得られることが確認された。
Table 1 As is clear from the results shown in Table 1, in each of the examples of the present invention, no irritating gas was generated during the polishing process, there was no fear of corrosion of the metal materials of the equipment, and the results were extremely
I was able to perform gentle machining work. Regarding polishing performance, the polishing speed was faster and the polished surface after polishing was of high quality compared to conventional aqueous solution type polishing agents. Furthermore, it was confirmed that the quality of the abrasive was improved by the combined use of particulate matter, and a polishing state superior to that of commonly used abrasives was obtained.

実施例2 」l盈亘且I 研磨剤の有効成分として、N−ブロモこはく酸イミド(
市販試薬;関東化学社製)(以下rNBsJと略記する
)、N−クロロこはく酸イミド(市販試薬;関東化学社
製)(以下rNcsJと略記する)、N−ブロモメチル
フタルイミド(市販試薬;関東化学社製)(以下rNB
MPJと略記する)を用いこれを第2表に示した各有m
溶媒に溶解させて研磨液を調製した。
Example 2 N-bromosuccinimide (
Commercial reagent; Kanto Kagaku Co., Ltd.) (hereinafter abbreviated as rNBsJ), N-chlorosuccinimide (commercial reagent; Kanto Kagaku Co., Ltd.) (hereinafter abbreviated as rNcsJ), N-bromomethylphthalimide (commercial reagent; Kanto Kagaku Co., Ltd.) (manufactured by rNB) (hereinafter referred to as rNB
(abbreviated as MPJ) is used for each of the methods shown in Table 2.
A polishing liquid was prepared by dissolving it in a solvent.

研磨 研磨は、実施例1と同じ条件でGaAs単結晶基板の研
磨を行ない、その結果を下記第2表に示した。
Polishing The GaAs single crystal substrate was polished under the same conditions as in Example 1, and the results are shown in Table 2 below.

第2表 第2表の結果から明らかであるように、N−ブロモこは
く酸イミド(NBS)は研磨能率(研磨速度)が高い点
が大きな特徴であり、したがって短時間で所定の研磨量
を得ることができるか、あるいは希薄な濃度で十分な研
磨量が確保できるという効果があり、しかも良好な研磨
面が得られるという効果がある。
Table 2 As is clear from the results in Table 2, N-bromosuccinimide (NBS) has a major feature of high polishing efficiency (polishing speed), so it can achieve a predetermined polishing amount in a short time. There is an effect that a sufficient amount of polishing can be secured with a dilute concentration, and a good polished surface can be obtained.

またN−クロロこはく酸イミド(NCS)は、上記(N
BS)に比べて研磨能率は低下するが、研磨面の状態は
(NBS)に比べて優れているという効果がある。
In addition, N-chlorosuccinimide (NCS) is the above-mentioned (N
Although the polishing efficiency is lower than that of (BS), the condition of the polished surface is superior to that of (NBS).

また更に、溶媒に不溶な硬′Jit微粒子を含有させた
場合に、微粒子の選択によって研磨面の品位が大幅に向
上するという効果がある。
Furthermore, when hard Jit fine particles insoluble in the solvent are contained, the quality of the polished surface can be significantly improved depending on the selection of the fine particles.

実施例3 実施例1の研磨剤GaAsに代えて、GaP単結晶基板
及びInP単結晶基板を対象とした以外は実施例1と同
じにして研磨を行なった。
Example 3 Polishing was carried out in the same manner as in Example 1 except that a GaP single crystal substrate and an InP single crystal substrate were used instead of the GaAs polishing agent used in Example 1.

その結果GaAsと同様の研磨速度、高品位の研磨面が
得られることが確認された。
As a result, it was confirmed that a polishing rate similar to that of GaAs and a high-quality polished surface could be obtained.

実施例4 実施例1の試験No 4における沈殿シリカに代えて、
炭酸カルシウム、酸化クロム、アルミナ、炭化ケイ素の
微粒子を夫々研磨液に含有させて実施例1と同様に研磨
を行なったところ、同様の研磨速度、高品位の研磨面が
得られることが確認された。研磨液に含有させる硬質微
粒子は、均質径のものほど高品位の研磨面となることが
確認された。
Example 4 Instead of precipitated silica in test No. 4 of Example 1,
When polishing was carried out in the same manner as in Example 1 by adding fine particles of calcium carbonate, chromium oxide, alumina, and silicon carbide to the polishing liquid, it was confirmed that similar polishing speeds and high-quality polished surfaces could be obtained. . It was confirmed that the more uniform the diameter of the hard particles contained in the polishing liquid, the higher the quality of the polished surface.

手続補正書 平成7年71月/3E( 1、事件の表・I− 平成1年↑シイ↑願第2に&!;ΔZ号4、代 理  人 住所 東京都千代田区丸の内2丁目6番2号丸の内へ重洲ビル
330他4名 7、補正のt・t $ 補 正 書 本願明細書中下記事項を補正致します。
Procedural amendment dated 1995/1995/3E (1. Table of cases/I- 1999 ↑ Sea ↑ Petition No. 2 &!; ΔZ No. 4, Agent address: 2-6-2 Marunouchi, Chiyoda-ku, Tokyo Shigesu Building 330 and 4 others to Marunouchi 7.Amendment t.t.$ Amendment The following matters will be amended in the specification of the application.

記 1 第2頁2行目に 「塩化メチル、」とあるを 「塩化メチレン、」と訂正する。Record 1. On the second page, second line. It says "methyl chloride," "Methylene chloride," I corrected.

2、第12頁9〜10目行に ’ [C4He) 4N”Br−Jとあルヲ’ [(C
4H9) J”Br−」と訂正する。
2. On page 12, lines 9-10, '[C4He) 4N'Br-J and Aruwo' [(C
4H9) Correct as J”Br-”.

3、第17頁8行目に 「均質径のもの」とあるを 「均質状のもの」と訂正する。3, page 17, line 8 It says "those of uniform diameter" Correct it to "a homogeneous thing."

Claims (1)

【特許請求の範囲】 1、下記一般式(I)で表わされる有機窒素ハロゲン化
合物を溶解した有機溶媒溶液からなることを特徴とする
硬脆材料の表面研磨剤 R^1R^2R^3R^4N^+X^−_n ・・・・
(I)(ただしR^1、R^2、R^3、R^4は有機
基であり、同じであつても異なつていてもよい。またX
は塩素又は臭素である)。 2、下記一般式(II)で表わされるハロゲン化カルボン
酸イミド類を溶解した有機溶媒溶液からなることを特徴
とする硬脆材料の表面研磨剤 (R−CO)_2NX・・・・(II) (ただしRはアルキレン基、Xは塩素又は臭素である)
。 3、請求項1又は2において、有機溶媒がメタノール、
エタノール、エチレングリコール、アセトン、塩化メチ
ル、4塩化炭素、ベンゼンのいずれかであることを特徴
とする硬脆材料の表面研磨剤。 4、請求項1乃至3のいずれかにおいて、前記有機溶液
中で溶解しない硬質微粒子を含むことを特徴とする硬脆
材料の表面研磨剤。 5、請求項1乃至4のいずれかにおいて、硬脆材料がG
aAs、GaP、InPであることを特徴とする硬脆材
料の表面研磨剤。
[Scope of Claims] 1. A surface abrasive for hard and brittle materials R^1R^2R^3R^4N, characterized by comprising an organic solvent solution in which an organic nitrogen halogen compound represented by the following general formula (I) is dissolved. ^+X^−_n・・・・・・
(I) (However, R^1, R^2, R^3, and R^4 are organic groups and may be the same or different.
is chlorine or bromine). 2. Surface abrasive for hard and brittle materials (R-CO)_2NX (II), characterized by being composed of an organic solvent solution in which a halogenated carboxylic acid imide represented by the following general formula (II) is dissolved (However, R is an alkylene group and X is chlorine or bromine)
. 3. In claim 1 or 2, the organic solvent is methanol,
A surface abrasive for hard and brittle materials characterized by being one of ethanol, ethylene glycol, acetone, methyl chloride, carbon tetrachloride, and benzene. 4. A surface abrasive for hard and brittle materials according to any one of claims 1 to 3, characterized in that it contains hard fine particles that do not dissolve in the organic solution. 5. In any one of claims 1 to 4, the hard brittle material is G.
A surface abrasive for hard and brittle materials, characterized in that it is aAs, GaP, or InP.
JP1258566A 1989-10-03 1989-10-03 Agent for polishing surface of hard and brittle material Pending JPH03121186A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1258566A JPH03121186A (en) 1989-10-03 1989-10-03 Agent for polishing surface of hard and brittle material

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1258566A JPH03121186A (en) 1989-10-03 1989-10-03 Agent for polishing surface of hard and brittle material

Publications (1)

Publication Number Publication Date
JPH03121186A true JPH03121186A (en) 1991-05-23

Family

ID=17322017

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1258566A Pending JPH03121186A (en) 1989-10-03 1989-10-03 Agent for polishing surface of hard and brittle material

Country Status (1)

Country Link
JP (1) JPH03121186A (en)

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