JPH03120395A - Coating method with bismuth oxide - Google Patents
Coating method with bismuth oxideInfo
- Publication number
- JPH03120395A JPH03120395A JP25527689A JP25527689A JPH03120395A JP H03120395 A JPH03120395 A JP H03120395A JP 25527689 A JP25527689 A JP 25527689A JP 25527689 A JP25527689 A JP 25527689A JP H03120395 A JPH03120395 A JP H03120395A
- Authority
- JP
- Japan
- Prior art keywords
- bismuth oxide
- solvent
- ketone
- film
- oxide powder
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910000416 bismuth oxide Inorganic materials 0.000 title claims abstract description 23
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 title claims abstract description 23
- 238000000576 coating method Methods 0.000 title claims abstract description 14
- 239000002904 solvent Substances 0.000 claims abstract description 24
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 239000000843 powder Substances 0.000 claims abstract description 14
- 150000002576 ketones Chemical class 0.000 claims abstract description 11
- 239000000725 suspension Substances 0.000 claims abstract description 5
- 230000005611 electricity Effects 0.000 claims 1
- 239000002659 electrodeposit Substances 0.000 claims 1
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 abstract description 21
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 abstract description 12
- 239000011248 coating agent Substances 0.000 abstract description 10
- 238000001962 electrophoresis Methods 0.000 abstract description 7
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 abstract description 4
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 abstract description 4
- 239000003792 electrolyte Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 description 11
- 239000006185 dispersion Substances 0.000 description 7
- 229910044991 metal oxide Inorganic materials 0.000 description 5
- 150000004706 metal oxides Chemical class 0.000 description 5
- 239000008188 pellet Substances 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- FDPIMTJIUBPUKL-UHFFFAOYSA-N pentan-3-one Chemical compound CCC(=O)CC FDPIMTJIUBPUKL-UHFFFAOYSA-N 0.000 description 4
- 239000007784 solid electrolyte Substances 0.000 description 4
- 239000007921 spray Substances 0.000 description 4
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 238000004070 electrodeposition Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 3
- HXVNBWAKAOHACI-UHFFFAOYSA-N 2,4-dimethyl-3-pentanone Chemical compound CC(C)C(=O)C(C)C HXVNBWAKAOHACI-UHFFFAOYSA-N 0.000 description 2
- QQZOPKMRPOGIEB-UHFFFAOYSA-N 2-Oxohexane Chemical compound CCCCC(C)=O QQZOPKMRPOGIEB-UHFFFAOYSA-N 0.000 description 2
- HCFAJYNVAYBARA-UHFFFAOYSA-N 4-heptanone Chemical compound CCCC(=O)CCC HCFAJYNVAYBARA-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 235000019441 ethanol Nutrition 0.000 description 2
- -1 ethyl- Chemical group 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- OKKJLVBELUTLKV-UHFFFAOYSA-N methanol Natural products OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 2
- XNLICIUVMPYHGG-UHFFFAOYSA-N pentan-2-one Chemical compound CCCC(C)=O XNLICIUVMPYHGG-UHFFFAOYSA-N 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Natural products CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- XSTXAVWGXDQKEL-UHFFFAOYSA-N Trichloroethylene Chemical group ClC=C(Cl)Cl XSTXAVWGXDQKEL-UHFFFAOYSA-N 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- PJGSXYOJTGTZAV-UHFFFAOYSA-N pinacolone Chemical compound CC(=O)C(C)(C)C PJGSXYOJTGTZAV-UHFFFAOYSA-N 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- UBOXGVDOUJQMTN-UHFFFAOYSA-N trichloroethylene Natural products ClCC(Cl)Cl UBOXGVDOUJQMTN-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D13/00—Electrophoretic coating characterised by the process
- C25D13/02—Electrophoretic coating characterised by the process with inorganic material
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、″電気泳動法による酸化ビスマスのコーティ
ング法に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention relates to a method for coating bismuth oxide by electrophoresis.
酸化物粉末の一般的なコーティング法として。 As a general coating method for oxide powder.
従来、スプレー法や電気泳動法が知られている。Conventionally, spray methods and electrophoresis methods are known.
ところが、酸化ビスマス粉末については適当な溶媒が選
択されない等の理由から、ａ気泳動法は実施されておら
ず、専らスプレー法によるコーティングが行われている
。However, for bismuth oxide powder, for reasons such as not being able to select an appropriate solvent, the aerophoresis method has not been carried out, and coating has been carried out exclusively by a spray method.
スプレー法は操作が箭単であるが、被膜を均一に形成す
るのが困難である。またスプレー内の液中で酸化ビスマ
ス粉末の良好な分散を維持する必要があり、不均一な分
散のため暫々ノズルの詰まりを生じるなどの問題がある
。Although the spray method is easy to operate, it is difficult to form a uniform coating. Further, it is necessary to maintain good dispersion of the bismuth oxide powder in the liquid in the spray, and there are problems such as the nozzle becoming clogged for a while due to non-uniform dispersion.
本発明者等は、ケトン類を溶媒として用いることにより
、電気泳動法によって酸化ビスマスを好適にコーティン
グできることを見出した。The present inventors have discovered that by using ketones as a solvent, bismuth oxide can be suitably coated by electrophoresis.
本発明は上記知見に基づくものであり、本発明によれば
、ケトン順番溶媒とし、該溶媒に酸化ビスマス粉末を懸
濁させ、該懸濁液中に設けた電極に通電し、陰極端子を
設けた基板表面に酸化ビスマスを電着させて被膜を形成
する方法が提供される。The present invention is based on the above findings, and according to the present invention, a ketone sequential solvent is used, bismuth oxide powder is suspended in the solvent, and an electrode provided in the suspension is energized to provide a cathode terminal. A method is provided for forming a film by electrodepositing bismuth oxide on the surface of a substrate.
電気泳動法において用いられる溶媒は、コーティングす
る粉体を均一に分散させ且つその分散を持続できること
が必要である。溶媒として従来−般に用いられているベ
ンゼン、トルエン、キシレン、トリクロルエチレン、ア
ルコール類を酸化ビスマスの溶媒として用いると、粉体
の分散性１分散の持続性に劣り、且つ被膜の付着力が弱
く良好な被膜を形成することが出来ない。分散性が悪い
と被膜の形成が困難であり、また分散の持続性が悪いと
、溶媒液面から離れた部分はど被膜が厚く、被膜の膜厚
が不均一になる。The solvent used in the electrophoresis method needs to be able to uniformly disperse the powder to be coated and maintain the dispersion. When benzene, toluene, xylene, trichloroethylene, and alcohols, which are conventionally used as solvents, are used as solvents for bismuth oxide, the dispersibility of the powder is poor, and the durability of the dispersion is poor, and the adhesion of the film is weak. It is not possible to form a good film. If the dispersibility is poor, it will be difficult to form a film, and if the sustainability of the dispersion is poor, the film will be thick in areas away from the solvent surface and the film thickness will be non-uniform.
本発明において１分散溶媒としてケトン類が用いられる
。具体的な例を挙げれば、アセトン、メチルエチルケト
ン、メチル−ｎ−プロピルケトン、ジエチルケトン、メ
チル１−ブチルケトン（ヘキサノン−２）、エチル−〇
−プロピルケトン（ヘキサノン−３）、メチル−ｔ−ブ
チルケトン（ビナコロン）、ジ−ｎ−プロピルケトン、
ジイソプロピルケトン、メチルイソブチルケトン等があ
る。これらのケトン類の中で、アセトン、メチルイソブ
チルケトン、メチルエチルケトン等が好適に用いられる
。アセトンは被膜基板を溶媒から取り出す際に溶媒の流
れ落ちによる膜厚の不均一を生じることがない、更にア
セトンは印加電圧によって分解し難いので良好な電場が
形成される。此の結果、良好な膜質を得ることかできる
。アセトンは他のケトン類に比べて印加電圧に対する安
定性が最も高いが、被膜の付着性がやや弱い。他方、メ
チルイソブチルケトン、メチルエチルケトンはアセトン
よりも被膜の付着性が良い。In the present invention, ketones are used as one dispersion solvent. Specific examples include acetone, methyl ethyl ketone, methyl-n-propyl ketone, diethyl ketone, methyl 1-butyl ketone (hexanone-2), ethyl-〇-propyl ketone (hexanone-3), methyl-t-butyl ketone ( (vinacolon), di-n-propyl ketone,
Examples include diisopropyl ketone and methyl isobutyl ketone. Among these ketones, acetone, methyl isobutyl ketone, methyl ethyl ketone, etc. are preferably used. Acetone does not cause non-uniform film thickness due to solvent run-off when the coated substrate is taken out of the solvent, and furthermore, acetone is difficult to decompose due to applied voltage, so a good electric field is formed. As a result, good film quality can be obtained. Acetone has the highest stability against applied voltage compared to other ketones, but its film adhesion is somewhat weak. On the other hand, methyl isobutyl ketone and methyl ethyl ketone have better film adhesion than acetone.
酸化ビスマス粉体は上記ケトン類の溶媒に良好に分散し
かつ分散状態が長時間維持され、これにより膜厚が均一
で表面が平滑な被膜を得ることができる。The bismuth oxide powder is well dispersed in the ketone solvent and the dispersed state is maintained for a long time, thereby making it possible to obtain a film with a uniform thickness and a smooth surface.
電気泳動の際、上記溶媒は電極界面の電位勾配によって
被膜内部からはじき出されるので、膜質の品位が高く且
つ被膜の乾燥が早い。During electrophoresis, the solvent is repelled from the inside of the film by the potential gradient at the electrode interface, resulting in high film quality and rapid drying of the film.
被膜を形成する陰極基板として、（１）白金、ステンレ
ス等の通常の金属板、（２）複合金属酸化物ペレット、
例えばＬａ−５ｒ−Ｃｏ系酸化物ペレット、（３）ジル
コニア等の絶縁体ペレットを用いることができる。複合
金属酸化物ペレットや絶縁体ペレットを用いる場合には
、該基板表面に少なくとも２個以上の＠極端子を設ける
。此れら基板の相対向する両側端に夫々陰極端子を設け
ることにより、絶縁性基板についても基板表面全体に均
一に被膜が形成される。As the cathode substrate on which the film is formed, (1) a normal metal plate such as platinum or stainless steel, (2) a composite metal oxide pellet,
For example, La-5r-Co based oxide pellets and (3) insulator pellets such as zirconia can be used. When using composite metal oxide pellets or insulator pellets, at least two or more @pole terminals are provided on the surface of the substrate. By providing cathode terminals on opposite ends of these substrates, a coating can be uniformly formed over the entire surface of the insulating substrate.
被膜の膜質、膜厚は印加電圧、酸化ビスマス粉体の懸濁
量１通電時間、セルの電気抵抗等によって変化する。従
ってこれらの条件を調整することにより、種々の膜質及
び膜厚の被膜を形成することができる。The film quality and thickness of the film vary depending on the applied voltage, the suspension amount of bismuth oxide powder, the duration of one current application, the electrical resistance of the cell, etc. Therefore, by adjusting these conditions, films with various film qualities and thicknesses can be formed.
本発明の方法によれば、酸化ビスマス粉体が均一に分散
され、分散状態も長時間安定であり、従って、膜厚が均
一で表面が平滑な亀裂のない固体電解質被膜を形成する
ことができる。According to the method of the present invention, the bismuth oxide powder is uniformly dispersed and the dispersion state is stable for a long time. Therefore, it is possible to form a crack-free solid electrolyte film with a uniform thickness and a smooth surface. .
また、本発明は金属酸化物等の絶縁性基板にも被膜を形
成することができるので、酸化ビスマス以卦の他の粉体
と共に電気泳動電着を繰り返すことにより、酸化ビスマ
スを含み、かつ組成の異なる金属酸化物被膜等を多層に
形成することができ。In addition, since the present invention can form a film on an insulating substrate such as a metal oxide, by repeating electrophoretic electrodeposition with other powders other than bismuth oxide, it is possible to It is possible to form multiple layers of metal oxide films with different values.
超イオン導電性固体電解質の厚膜を容易に形成すること
ができる。Thick films of superionically conductive solid electrolytes can be easily formed.
更に本発明の方法によれば、金属酸化物等の絶縁性基板
に被膜を形成できるので、固体電解質厚膜を用いた高温
型焼料電池の製造において、該電池の電極／１！解質／
電極の多層化膜の一貫生産を可能とする。この結果、高
出力の固体電解質厚膜を容易に且つ効率良く製造でき、
製造時間、コストの大幅な低減を達成できる。Furthermore, according to the method of the present invention, a film can be formed on an insulating substrate such as a metal oxide, so that in the production of a high-temperature type sintered battery using a solid electrolyte thick film, the electrode/1! Desolation/
Enables integrated production of multilayer electrode films. As a result, high-output solid electrolyte thick films can be manufactured easily and efficiently.
Significant reductions in manufacturing time and costs can be achieved.
この他に１本発明は基板の材質を問わずに酸化ビスマス
の被膜を形成できるので１種々のセンサーや電子材料の
被膜を形成して多機能化することができる。更に１本発
明は基板の形状に拘束されないので、絶雑な形状の部材
に対しても被膜を形成することができる。In addition, in the present invention, a bismuth oxide film can be formed regardless of the material of the substrate, so it is possible to form a film for various sensors and electronic materials, thereby making it multifunctional. Furthermore, since the present invention is not restricted by the shape of the substrate, it is possible to form a coating even on members with irregular shapes.
〔実施例〕 以下に本発明の実施例を示す。〔Example〕 Examples of the present invention are shown below.
実施例１ 第１図に示す装置を用いて本発明を実施した。Example 1 The present invention was carried out using the apparatus shown in FIG.
第１−図の装置において、電気泳動用セル１０は超音波
発生装［１１に収納されており、該セルＩＯの内部は溶
媒１３によって満たされている。該セル１０には溶媒に
浸漬された電極１５．１７が設けられており、該電極１
５．１７は電源１９、制御系２０に接続し、記録計２１
が詩けられている。電源１９及び制御系２０により電極
１５．１７に直流高電圧矩形波パルスを印加する。ｆｌ
ｉｌ晴着時測される電流変化を記録計２１に記録する。In the apparatus shown in FIG. 1, an electrophoresis cell 10 is housed in an ultrasonic generator [11], and the inside of the cell IO is filled with a solvent 13. The cell 10 is provided with an electrode 15.17 immersed in a solvent;
5.17 is connected to the power supply 19, control system 20, and recorder 21
is being proclaimed. A DC high voltage rectangular wave pulse is applied to the electrodes 15.17 by a power source 19 and a control system 20. fl
The change in current measured during clear arrival is recorded on the recorder 21.
酸化ビスマス（Ｂｉ２０．） １ ｇをアセトン６０
＋Ｒに分散懸濁させ、 １０４Ｖの電圧で５秒通電した
結果、均一で良好な電着表面のＢｉ、Ｏ，被膜が得られ
た。このとき用いた基板は、両極とも金属鉄を用いた。Bismuth oxide (Bi20.) 1 g to acetone 60.
As a result of dispersing and suspending the mixture in +R and energizing it for 5 seconds at a voltage of 104 V, a uniform and good electrodeposited surface of Bi, O, and O coatings was obtained. The substrates used at this time were made of metal iron for both electrodes.
実施例２
実施例１の同一の装置および方法により１通電時間を２
．５秒、１０秒と変化させた場合、何れも均一なかつ良
好な電着表面を有するＢｉ２Ｏ，被膜を得た。Example 2 Using the same device and method as in Example 1, one energization time was reduced to 2.
．． When the time was changed to 5 seconds or 10 seconds, a Bi2O film having a uniform and good electrodeposited surface was obtained in both cases.
実施ｉｓ３
実施例１と同一の装置を用い、Ｂｉ２Ｏ，Ｉｇをジエチ
ルケトン６０ｄに分散懸濁させ、６００ｖの電圧を印加
して５秒間通電した結果、均一かつ平滑な電着表面のＦ
ｌｉ、Ｏ，被膜が得られた。Implementation is3 Using the same equipment as in Example 1, Bi2O, Ig was dispersed and suspended in diethyl ketone 60d, and a voltage of 600V was applied for 5 seconds. As a result, F of the uniform and smooth electrodeposited surface was
A li, O, coating was obtained.
比較例
実施例１と同一の装置を用い、次の表に示すケトン類以
外の溶媒を使用して、表記の電圧および通電時間の条件
で表記の基板を陰極として電気泳動によるコーティング
を実施した結果、何れも電着が起らず、被膜を得ること
ができなかった。Comparative Example Using the same equipment as in Example 1, using a solvent other than the ketones listed in the table below, and using the listed voltage and current application time conditions, electrophoretic coating was performed using the listed substrate as a cathode. In both cases, electrodeposition did not occur and no coating could be obtained.
なお両極には実施例１と同様に金属鉄を用いた。Note that metal iron was used for both electrodes as in Example 1.
表 溶 媒 水＋アセトン（１： シリコンオイル メチルアルコール エチルアルコール ベンゼン トルエン ｐ−キシレン トリクロルエチレン 拳トナートリキッド ヘキサン 電 圧（Ｖ） 通電時間（秒） １） ２５０ ５ ６０６ ２．５ ６０６ １０ １１５ ５００ １０ ６００ ２０ ４００ ２０ ３００ ２０ エ ３５０ ２０ ４０４ ２０table Solvent Water + acetone (1: silicon oil methyl alcohol Ethyl alcohol benzene toluene p-xylene Trichlorethylene fist toner liquid hexane Voltage (V) Energization time (seconds) 1) 250 5 606 2.5 606 10 115 500 10 600 20 400 20 300 20 D 350 20 404 20
図は電気泳動電着装置の概略図である。図面中、１０・
・・セル、１１・・・超音波発生装置、１３・・・溶媒
、１５、１７・・・電極、１９・・・電源、２０・・・
制御系２１・・・記録計。The figure is a schematic diagram of an electrophoretic electrodeposition apparatus. In the drawing, 10.
... Cell, 11... Ultrasonic generator, 13... Solvent, 15, 17... Electrode, 19... Power supply, 20...
Control system 21...Recorder.
Claims (1)
を懸濁させ、該懸濁液中に設けた電極に通電し、陰極端
子を設けた基板表面に酸化ビスマスを電着させて被膜を
形成する酸化ビスマスのコーティング法。(1) Use ketones as a solvent, suspend bismuth oxide powder in the solvent, apply electricity to an electrode provided in the suspension, and electrodeposit bismuth oxide on the surface of the substrate provided with the cathode terminal to form a film. Coating method of forming bismuth oxide.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25527689A JPH03120395A (en) | 1989-10-02 | 1989-10-02 | Coating method with bismuth oxide |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25527689A JPH03120395A (en) | 1989-10-02 | 1989-10-02 | Coating method with bismuth oxide |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03120395A true JPH03120395A (en) | 1991-05-22 |
Family
ID=17276503
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP25527689A Pending JPH03120395A (en) | 1989-10-02 | 1989-10-02 | Coating method with bismuth oxide |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03120395A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20030033421A (en) * | 2001-10-22 | 2003-05-01 | 주식회사 미래소재 | Electrodeposition Apparatus and Method Using the Ultrasonic Wave |
| KR100461717B1 (en) * | 2001-12-19 | 2004-12-14 | 삼성전기주식회사 | Barrel plating apparatus and method |
| JP2008291338A (en) * | 2007-05-28 | 2008-12-04 | National Institute For Materials Science | Method of manufacturing ceramic formed body, and electrophoresis apparatus used therefor |
| WO2024055355A1 (en) * | 2022-09-15 | 2024-03-21 | 广东省科学院测试分析研究所(中国广州分析测试中心) | Preparation method for bismuth oxide film and reconfigurable photoelectric logic gate |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01159399A (en) * | 1987-11-10 | 1989-06-22 | Ciba Geigy Ag | Production of superconductive material having arbitrary shape |
-
1989
- 1989-10-02 JP JP25527689A patent/JPH03120395A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01159399A (en) * | 1987-11-10 | 1989-06-22 | Ciba Geigy Ag | Production of superconductive material having arbitrary shape |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20030033421A (en) * | 2001-10-22 | 2003-05-01 | 주식회사 미래소재 | Electrodeposition Apparatus and Method Using the Ultrasonic Wave |
| KR100461717B1 (en) * | 2001-12-19 | 2004-12-14 | 삼성전기주식회사 | Barrel plating apparatus and method |
| JP2008291338A (en) * | 2007-05-28 | 2008-12-04 | National Institute For Materials Science | Method of manufacturing ceramic formed body, and electrophoresis apparatus used therefor |
| WO2024055355A1 (en) * | 2022-09-15 | 2024-03-21 | 广东省科学院测试分析研究所(中国广州分析测试中心) | Preparation method for bismuth oxide film and reconfigurable photoelectric logic gate |
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