JPH03115824A - Pressure sensor - Google Patents
Pressure sensorInfo
- Publication number
- JPH03115824A JPH03115824A JP25381789A JP25381789A JPH03115824A JP H03115824 A JPH03115824 A JP H03115824A JP 25381789 A JP25381789 A JP 25381789A JP 25381789 A JP25381789 A JP 25381789A JP H03115824 A JPH03115824 A JP H03115824A
- Authority
- JP
- Japan
- Prior art keywords
- magnetic field
- pressure
- thin film
- ferromagnetic thin
- field intensity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005291 magnetic effect Effects 0.000 claims abstract description 44
- 239000010409 thin film Substances 0.000 claims abstract description 30
- 230000005294 ferromagnetic effect Effects 0.000 claims abstract description 29
- 230000008859 change Effects 0.000 claims abstract description 28
- 239000000758 substrate Substances 0.000 claims description 8
- 230000009471 action Effects 0.000 claims description 2
- 230000005381 magnetic domain Effects 0.000 abstract description 7
- 230000004907 flux Effects 0.000 abstract description 2
- 238000001514 detection method Methods 0.000 description 21
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 7
- 238000000034 method Methods 0.000 description 5
- 230000001681 protective effect Effects 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910003266 NiCo Inorganic materials 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 229920003002 synthetic resin Polymers 0.000 description 2
- 239000000057 synthetic resin Substances 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
Landscapes
- Measuring Fluid Pressure (AREA)
Abstract
Description
【発明の詳細な説明】
［発明の目的］
（産業上の利用分野）
本発明は、圧力検知装置に関し、さらに詳しくは強磁性
体薄膜の圧力による磁気抵抗変化を利用した圧力検知装
置の改良に関する。[Detailed Description of the Invention] [Object of the Invention] (Industrial Application Field) The present invention relates to a pressure sensing device, and more particularly to an improvement in a pressure sensing device that utilizes changes in magnetic resistance caused by pressure in a ferromagnetic thin film. .
（従来の技術）
強磁性薄膜を基板上に所定のパターンで形成し、強磁性
体薄膜に外部圧力が作用するときこの部分の磁気抵抗が
変化することを利用して圧力の変位検出を行う圧力検知
装置として従来第７図に示すものが知られている。(Prior art) A pressure method in which a ferromagnetic thin film is formed in a predetermined pattern on a substrate, and pressure displacement is detected by utilizing the change in magnetic resistance of this part when external pressure acts on the ferromagnetic thin film. As a conventional detection device, one shown in FIG. 7 is known.
同図に示す圧力検知装置２１は、断面凹状のガラス製の
基板２２と、前記基板２２の凹部２２ａとは反対側の平
坦面２２ｂ上にフォトエツチング方法によりＮｉＣｏ等
の磁気抵抗効果を発揮する強磁性体薄膜２３を所定のパ
ターンに形成して検知部とし、前記強磁性体薄膜２３上
に例えば窒化ケイ素からなる保護部２４を設け、さらに
前記強磁性体薄膜２３の両端部には例えば金などにより
電極部２５を設け、前記電極部２５に同様に金などによ
りリード線２６を接続配置し、前記リード線２６の一端
部を例えば銅製のリード端子２７に接続配置して成り、
かつ、前記強磁性体薄膜２３の検知部に対応する前記保
護部２４の圧力検知領域２４ａと、前記リード端子２７
の外部接続端２７ａを除いた装置外周のほぼ全域を合成
樹脂部材２８により被覆して構成されている。The pressure sensing device 21 shown in the figure includes a glass substrate 22 with a concave cross section, and a strong material such as NiCo that exhibits a magnetoresistive effect by photo-etching on a flat surface 22b on the opposite side of the concave portion 22a of the substrate 22. A magnetic thin film 23 is formed in a predetermined pattern to serve as a detection part, a protective part 24 made of silicon nitride, for example, is provided on the ferromagnetic thin film 23, and further, a protective part 24 made of, for example, silicon nitride is provided on both ends of the ferromagnetic thin film 23. An electrode part 25 is provided, a lead wire 26 is similarly connected to the electrode part 25 using gold or the like, and one end of the lead wire 26 is connected to a lead terminal 27 made of copper, for example.
and the pressure detection area 24a of the protection part 24 corresponding to the detection part of the ferromagnetic thin film 23 and the lead terminal 27.
Almost the entire outer periphery of the device excluding the external connection end 27a is covered with a synthetic resin member 28.
そして、前記圧力検知装置２１は、圧力付与部材２９に
より所定の印加圧力を、前記圧力検知領域２４ａに付与
されたときその圧力Ｐの検出を行うようになっている。The pressure detection device 21 detects the pressure P when a predetermined pressure is applied to the pressure detection region 24a by the pressure application member 29.
ところで前記圧力検知装置２１の磁界強度−抵抗変化率
特性は、第８図に示すように、電源３１によりコイル３
０に電圧を印加して磁束φを圧力検知装置２１にかけ、
上述した圧力検知装置２１の印加圧力による磁界強度−
抵抗変化率特性によって測定される。By the way, the magnetic field strength-resistance change rate characteristic of the pressure sensing device 21 is as shown in FIG.
Apply a voltage to 0 to apply magnetic flux φ to the pressure detection device 21,
Magnetic field strength due to the pressure applied by the pressure detection device 21 described above -
Measured by resistance change rate characteristics.
この場合、理論上は第９図に示すように（Ｘ軸に磁界強
度（Ｇニガウス）を、ｙ軸に抵抗変化率を示す）、例え
ば印加圧力（図中Ｐとも表示する）ヲＯｋｇ／Ｃ［［ｒ
、 ０． ５ｋｇ／ａｔ、 １ｋｇ／ｃｎｆノヨウ
１．：変化させていくと、磁界強度に対する抵抗変化率
が各々略余弦関数の２乗に応じて変化する特性を示し、
磁界強度が正負両側の飽和磁界（磁界強度を変化させて
も抵抗変化が生じない領域）に至ると抵抗変化率は飽和
状態になる各特性曲線が得られる。In this case, theoretically, as shown in Figure 9 (the X-axis shows the magnetic field strength (G n Gauss) and the y-axis shows the resistance change rate), for example, the applied pressure (also indicated as P in the figure) is Okg/C. [[r
, 0. 5kg/at, 1kg/cnf1. : As the resistance is changed, the rate of change in resistance with respect to the magnetic field strength changes approximately in accordance with the square of the cosine function.
When the magnetic field strength reaches both positive and negative saturation magnetic fields (a region where no change in resistance occurs even when the magnetic field strength is changed), characteristic curves are obtained in which the rate of change in resistance becomes saturated.
（発明が解決しようとする課題）
しかしながら、実際には前記強磁性体薄膜２３のセンサ
を構成する磁区の不均一さに基因して、第１０図に示す
ように（印加圧力０．５Ｖａｌの場合を例にする）、磁
界強度を負の領域（図中符号−で示す領域）から正の領
域（図中符号子で示す領域）に変化させた場合の抵抗変
化率を示す曲線１１と、正の領域から負の領域に変化さ
せた場合の抵抗変化率を示す曲線！２とが一致せず、前
記強磁性体薄膜２３に同じ圧力を印加しても異なる抵抗
値を示すことが分かる（第１０図中ｙ軸上に２つの交点
ａ、 ｂが存在するため）。(Problem to be Solved by the Invention) However, in reality, due to the non-uniformity of the magnetic domains constituting the sensor of the ferromagnetic thin film 23, as shown in FIG. Curve 11 shows the rate of change in resistance when the magnetic field strength is changed from a negative region (region indicated by a symbol - in the figure) to a positive region (region indicated by a symbol in the figure), and A curve showing the rate of change in resistance when changing from the region to the negative region! 2 do not match, and even if the same pressure is applied to the ferromagnetic thin film 23, it shows different resistance values (because there are two intersections a and b on the y-axis in FIG. 10).
この結果製品化した場合、圧力検知装置２１の圧力検知
に大きな誤差を生じるという問題を招く。As a result, if it is commercialized, a problem arises in that a large error occurs in pressure detection by the pressure detection device 21.
本発明は上記事情に鑑みてなされたものであり、強磁性
体薄膜を構成する磁区の均一化が図れ、圧力検知の検知
精度の向上が図れる圧力検知装置を提供することを目的
とするものである。The present invention has been made in view of the above circumstances, and it is an object of the present invention to provide a pressure detection device that can uniformize the magnetic domains constituting a ferromagnetic thin film and improve the detection accuracy of pressure detection. be.
［発明の構成］
（課題を解決するための手段）
本発明の構成は基板上に強磁性体薄膜を設け、外部圧力
の作用下で生じる前記強磁性体薄膜の磁気抵抗の変化を
利用して圧力検知を行う圧力検知装置であって、前記強
磁性体薄膜に対し磁界強度−抵抗変化率特性における線
型領域の略中央部が磁界強度分布の零となるような磁界
を印加するバイアス磁石を備えたことを特徴とするもの
である。[Structure of the Invention] (Means for Solving the Problems) The structure of the present invention is to provide a ferromagnetic thin film on a substrate, and utilize the change in magnetic resistance of the ferromagnetic thin film that occurs under the action of external pressure. A pressure sensing device that detects pressure, comprising a bias magnet that applies a magnetic field to the ferromagnetic thin film such that the approximate center of the linear region in the magnetic field strength-resistance change rate characteristic is zero in the magnetic field strength distribution. It is characterized by:
（作 用）
上記構成の装置によれば、強磁性体薄膜に対し上述のよ
うなバイアス磁石を設けたことにより、強磁性体薄膜を
構成する磁区の均一化が図れ、磁界強度−抵抗変化率特
性のばらつきが無くなる。(Function) According to the device having the above configuration, by providing the bias magnet as described above to the ferromagnetic thin film, the magnetic domains constituting the ferromagnetic thin film can be made uniform, and the magnetic field strength - resistance change rate Dispersion in characteristics is eliminated.
（実施例） 以下本発明の一実施例を図面を参照して説明する。(Example) An embodiment of the present invention will be described below with reference to the drawings.
第１図は本発明の一実施例装置を示す概略断面図である
。FIG. 1 is a schematic sectional view showing an apparatus according to an embodiment of the present invention.
同図に示す圧力検知装置１は、断面凹状のガラス製の基
板２を備え、この基板２の凹部２ａとは反対側の平坦面
２ｂ上にフォトエツチング方法によりＮｉＣｏ等の磁気
抵抗効果を発揮する強磁性体薄膜３を所定のパターンに
形成して検知部とし、前記強磁性体薄膜３上に例えば窒
化ケイ素からなる保護部４を設け、さらに前記強磁性体
薄膜３の両端部には例えば金などにより電極部５を設け
、前記電極部５に同様に金などによりリード線６を接続
配置し、前記リード線６の一端部を例えば銅製のリード
端子７に接続配置し、前記凹部２ａ側に、前記強磁性体
薄膜３にバイアス磁界を印加するバイアス磁石８を設け
て成り、かつ、前記強磁性体薄膜３の検知部に対応する
前記保護部４の圧力検知領域４ａと、前記リード端子７
の外部接続端７ａを除き、さらに前記バイアス磁石８を
内包し、装置外周のほぼ全域を合成樹脂部材９により被
覆して構成されている。The pressure sensing device 1 shown in the figure is equipped with a glass substrate 2 having a concave cross section, and a magnetoresistive effect of NiCo or the like is formed on a flat surface 2b of the substrate 2 on the opposite side from the concave portion 2a by a photoetching method. A ferromagnetic thin film 3 is formed in a predetermined pattern to serve as a detection part, a protective part 4 made of silicon nitride, for example, is provided on the ferromagnetic thin film 3, and further, a protective part 4 made of, for example, silicon nitride is provided on both ends of the ferromagnetic thin film 3. An electrode portion 5 is provided by a method such as the above, a lead wire 6 is similarly connected to the electrode portion 5 using gold or the like, one end of the lead wire 6 is connected to a lead terminal 7 made of copper, for example, and the lead wire 6 is connected to the electrode portion 5, and one end of the lead wire 6 is connected to a lead terminal 7 made of copper, for example. , a bias magnet 8 for applying a bias magnetic field to the ferromagnetic thin film 3 is provided, and the pressure sensing area 4a of the protection part 4 corresponding to the sensing part of the ferromagnetic thin film 3 and the lead terminal 7 are provided.
Except for the external connection end 7a, the bias magnet 8 is further enclosed, and almost the entire outer periphery of the device is covered with a synthetic resin member 9.
尚、前記バイアス磁石８のバイアス磁界の強度は、飽和
磁界（第９図参照）より小さく、かつ、前記強磁性体薄
膜３に対し磁界強度−抵抗変化率特性における線型領域
の略中央部が磁界強度分布の零となるような磁界（例え
ば第９図中圧力０、 ５ｋｇ／ａｌの場合、ｙ軸上の交
点の抵抗変化率の値が１．５％であれば０．７５％）に
設定するのが良好である。The strength of the bias magnetic field of the bias magnet 8 is smaller than the saturation magnetic field (see FIG. 9), and approximately the center of the linear region in the magnetic field strength-resistance change rate characteristic for the ferromagnetic thin film 3 is the magnetic field. Set the magnetic field so that the intensity distribution becomes zero (for example, in the case of pressure 0 and 5 kg/al in Figure 9, if the value of the resistance change rate at the intersection on the y-axis is 1.5%, set it to 0.75%). It is good to do so.
そして、前記圧力検知装置１は、圧力付与部材１０によ
り所定の印加圧力を付与され圧力Ｐの検知を行なうよう
に成っている。The pressure sensing device 1 is configured to detect a pressure P by applying a predetermined applied pressure by a pressure applying member 10.
次に上述した圧力検知装置１の特性について図面を参照
して説明する。Next, the characteristics of the pressure sensing device 1 described above will be explained with reference to the drawings.
前述した従来例と同様に、前記圧力検知装置１の特性は
、第２図に示すように、電源１２によりコイル１１に電
圧を印加して磁束φを圧力検知装置１にかけ、上述した
圧力検知装置１の印加圧力による、磁界強度−抵抗変化
率特性によって測定される。Similar to the conventional example described above, the characteristics of the pressure sensing device 1 are as shown in FIG. It is measured by the magnetic field strength-resistance change rate characteristic with an applied pressure of 1.
圧力検知装置１に所定の印加圧力（図中Ｐとも表示する
）を与えた場合、第３図（Ｘ軸に磁界強度（Ｇニガウス
）を、ｙ軸に抵抗変化率を示す）に示すように印加圧力
をＯｋｇ／ｃｄ、 ０． ５ｋｇ／ｃｄ。When a predetermined applied pressure (also indicated as P in the figure) is applied to the pressure detection device 1, as shown in Fig. 3 (the X-axis shows the magnetic field strength (G n Gauss) and the y-axis shows the resistance change rate), The applied pressure is Okg/cd, 0. 5kg/cd.
１ ｋｇ／ｃｎｆのように変化させてい（と、抵抗変化
率の最高値は正の領域に移動し、各磁界強度−抵抗変化
率特性における線型領域の各々の略中央部が磁界強度分
布の零の領域となり（ｙ軸との交点Ｃ１ｄ、ｅ）、磁界
強度に対する各抵抗変化率が零の領域を境として線型に
変化する特性を示し、それぞれの特性曲線が得られる。1 kg/cnf (and the highest value of the resistance change rate moves to the positive region, and approximately the center of each linear region in each magnetic field strength-resistance change rate characteristic becomes zero of the magnetic field strength distribution. (intersection points C1d, e with the y-axis), and each resistance change rate with respect to magnetic field strength shows characteristics that change linearly with a zero region as a boundary, and respective characteristic curves are obtained.
この結果、例えば圧力０． ５ｋｇ／ｃｆｆｌの場合、
従来例と異なり、第４図に示すように磁界強度を、負の
領域（図中符号−で示す領域）から正の領域（図中符号
子で示す領域）に変化させた場合と正の領域から負の領
域に変化させた場合との抵抗変化率を示す曲線は、同一
の曲線となる。これは前記強磁性体薄膜３を構成する磁
区が均一化されたことに起因するものである。As a result, for example, the pressure is 0. In the case of 5kg/cffl,
Unlike the conventional example, as shown in Fig. 4, when the magnetic field strength is changed from a negative region (region indicated by a symbol - in the figure) to a positive region (region indicated by a symbol in the figure), The curves showing the rate of change in resistance when the resistance is changed from the negative region to the negative region are the same curves. This is due to the fact that the magnetic domains constituting the ferromagnetic thin film 3 are made uniform.
したがって、第３図中それぞれの印加圧力に対する特性
曲線とｙ軸との交点ｃ、 ｄ、 ｅに対応する抵抗
値（図中は抵抗変化率で示している）により、前記圧力
検知装置１の出力の基準値を設定すことができる。Therefore, the output of the pressure sensing device 1 is determined by the resistance values (indicated by resistance change rate in the figure) corresponding to the intersection points c, d, and e of the characteristic curves for each applied pressure and the y-axis in FIG. It is possible to set a reference value for
このようにして、第１図に示す構成の圧力検知装置１を
例えば第５図に示すように、外部固定抵抗Ｒに直接接続
をし、電圧■。を印加し、前記圧力検知装置１の出力電
圧を増幅回路１３にて増幅して検知すれば、精度よく圧
力検知ができる。In this way, the pressure sensing device 1 having the configuration shown in FIG. 1 is directly connected to the external fixed resistor R as shown in FIG. is applied and the output voltage of the pressure sensing device 1 is amplified and detected by the amplifier circuit 13, pressure can be detected with high accuracy.
本発明は、上述した実施例に限定されるものではなく、
その要旨の範囲内で種々の変形が可能である。The present invention is not limited to the embodiments described above,
Various modifications are possible within the scope of the gist.
例えば強磁性体薄膜（検知部）のパターン及び圧力検知
装置自体の構成も適宜変更可能であり、第６図に示すよ
うに互いに直交する方向に形成されたパターン１４ａ、
１４ｂと、パターン１５ａ。For example, the pattern of the ferromagnetic thin film (sensing section) and the configuration of the pressure sensing device itself can be changed as appropriate, and as shown in FIG. 6, patterns 14a formed in mutually orthogonal directions,
14b and pattern 15a.
１５ｂとを有し、これらをブリッジ接続した構成として
もよい。15b, and these may be bridge-connected.
また同図に示すようにパターン１４ａ、１５ａを前記圧
力付与部材１０等により圧力が付与され、圧力を検知す
る圧力検知領域１６に対応するように配置し、さらに同
図に示すような回路構成とすれば、図中の出力端子ｂ１
．ｂ２間の出力の増大が図れるため検知感度の向上を図
れる。尚図中１７は印加電源であり、１８は接地部（ア
ース）であり、Ｒｏは抵抗である。Further, as shown in the figure, the patterns 14a and 15a are arranged so as to correspond to the pressure detection area 16 where pressure is applied by the pressure applying member 10 etc. and the pressure is detected, and the circuit configuration as shown in the figure is further arranged. Then, output terminal b1 in the figure
．． Since the output between b2 can be increased, detection sensitivity can be improved. In the figure, 17 is an applied power source, 18 is a grounding part (earth), and Ro is a resistance.
［発明の効果コ
以上詳述した本発明によれば、強磁性体薄膜のセンサを
構成する磁区の均一化が図れ、圧力検知の検出精度の向
上が可能な圧力検知装置を提供することができる。[Effects of the Invention] According to the present invention described in detail above, it is possible to provide a pressure detection device in which the magnetic domains constituting the ferromagnetic thin film sensor can be made uniform and the detection accuracy of pressure detection can be improved. .
第１図は本発明の一実施例装置を示す厩略断面図、第２
図は本発明の一実施例装置の特性測定方法の説明図、第
３図及び第４図ははそれぞれ本発明の実施例装置の特性
説明図、第５図は本発明の実施例装置の使用状態の概略
回路図、第６図は本発明の変形例の概略構成図、第７図
は従来例を示す概略断面図、第８図は従来例の特性測定
方法の説明図、第９図及び第１０図はそれぞれ従来例の
特性説明図である。
ｌ・・・圧力検知装置、 ２・・・基板、３・・・強磁
性体薄膜、 ４・・・保護膜、５・・・電極部、 ６・
・・リード線、７・・・リード端子、 ８・・・バイア
ス磁石。
１
第
図
第
図
第
図Fig. 1 is a schematic sectional view of a stable showing an embodiment of the device of the present invention;
The figure is an explanatory diagram of the characteristic measuring method of the apparatus according to the embodiment of the present invention, FIGS. 6 is a schematic configuration diagram of a modified example of the present invention, FIG. 7 is a schematic sectional view showing a conventional example, FIG. 8 is an explanatory diagram of the characteristic measuring method of the conventional example, and FIG. FIG. 10 is a characteristic diagram of each conventional example. 1... Pressure detection device, 2... Substrate, 3... Ferromagnetic thin film, 4... Protective film, 5... Electrode part, 6...
...Lead wire, 7...Lead terminal, 8...Bias magnet. 1 Figure Figure Figure
Claims (1)
る前記強磁性体薄膜の磁気抵抗の変化を利用して圧力検
知を行う圧力検知装置であって、前記強磁性体薄膜に対
し磁界強度−抵抗変化率特性における線型領域の略中央
部が磁界強度分布の零となるような磁界を印加するバイ
アス磁石を備えたことを特徴とする圧力検知装置。A pressure sensing device is provided with a ferromagnetic thin film on a substrate and detects pressure by utilizing a change in magnetic resistance of the ferromagnetic thin film that occurs under the action of external pressure, the device comprising: applying a magnetic field to the ferromagnetic thin film; A pressure sensing device comprising a bias magnet that applies a magnetic field such that the magnetic field intensity distribution is zero approximately at the center of the linear region in the strength-resistance change rate characteristic.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25381789A JPH03115824A (en) | 1989-09-29 | 1989-09-29 | Pressure sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25381789A JPH03115824A (en) | 1989-09-29 | 1989-09-29 | Pressure sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03115824A true JPH03115824A (en) | 1991-05-16 |
Family
ID=17256549
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP25381789A Pending JPH03115824A (en) | 1989-09-29 | 1989-09-29 | Pressure sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03115824A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008013951A (en) * | 2006-07-03 | 2008-01-24 | Atlas Communication Co Ltd | Split concrete pole |
| JP2009033951A (en) * | 2007-07-30 | 2009-02-12 | Daewon Electric Co Ltd | Method of construction work of circular arc shape aerial line electric pole under bracing member using expansion excavation unit for auger crane |
-
1989
- 1989-09-29 JP JP25381789A patent/JPH03115824A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008013951A (en) * | 2006-07-03 | 2008-01-24 | Atlas Communication Co Ltd | Split concrete pole |
| JP2009033951A (en) * | 2007-07-30 | 2009-02-12 | Daewon Electric Co Ltd | Method of construction work of circular arc shape aerial line electric pole under bracing member using expansion excavation unit for auger crane |
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