JPH03111524A - Production of heat radiative substrate - Google Patents
Production of heat radiative substrateInfo
- Publication number
- JPH03111524A JPH03111524A JP25119289A JP25119289A JPH03111524A JP H03111524 A JPH03111524 A JP H03111524A JP 25119289 A JP25119289 A JP 25119289A JP 25119289 A JP25119289 A JP 25119289A JP H03111524 A JPH03111524 A JP H03111524A
- Authority
- JP
- Japan
- Prior art keywords
- fibers
- base material
- metallic material
- copper
- metal material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 42
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 239000007769 metal material Substances 0.000 claims abstract description 37
- 239000000835 fiber Substances 0.000 claims abstract description 34
- 239000000463 material Substances 0.000 claims abstract description 25
- 238000002156 mixing Methods 0.000 claims abstract description 5
- 239000000203 mixture Substances 0.000 claims abstract description 5
- 238000010438 heat treatment Methods 0.000 claims abstract 2
- 230000017525 heat dissipation Effects 0.000 claims description 28
- 238000000034 method Methods 0.000 claims description 11
- 238000002844 melting Methods 0.000 claims description 10
- 230000008018 melting Effects 0.000 claims description 10
- 239000010949 copper Substances 0.000 abstract description 27
- 238000000465 moulding Methods 0.000 abstract description 8
- 229910052802 copper Inorganic materials 0.000 abstract description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract description 6
- 229910052751 metal Inorganic materials 0.000 abstract description 5
- 239000002184 metal Substances 0.000 abstract description 5
- 239000002657 fibrous material Substances 0.000 abstract 1
- 238000012856 packing Methods 0.000 abstract 1
- 229910001374 Invar Inorganic materials 0.000 description 10
- 238000005470 impregnation Methods 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 5
- 238000005096 rolling process Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 229910052721 tungsten Inorganic materials 0.000 description 5
- 239000000843 powder Substances 0.000 description 4
- 229920000049 Carbon (fiber) Polymers 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 239000004917 carbon fiber Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 244000145845 chattering Species 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- -1 even after rolling Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 239000002759 woven fabric Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】 〔産業上の利用分野〕 この発明は、放熱性基板の製造方法に関する。[Detailed description of the invention] [Industrial application field] The present invention relates to a method of manufacturing a heat dissipating substrate.
半導体装置においては、素子の容量が増大・パワー化し
、集積度が高密度化するに伴い、素子から発生する熱の
放出をいかにうまく行なうか、ということが重要な課題
となっている。In semiconductor devices, as the capacitance and power of elements increase and the degree of integration becomes higher, it has become an important issue to effectively dissipate heat generated from the elements.
そのため、半導体素子を放熱性基板に直接取付けること
が行なわれているが、この場合、放熱性基板と半導体素
子の熱膨張差が問題となる。熱膨張率の差が大きいと、
半導体素子のシリコン基板が過大な応力を受け、同基板
にクラックを生じたり、動作の異常を生じたりするので
ある。それゆえ、低熱膨張性と高放熱性とを兼ね備えた
放熱性基板を得る方法については、産業上の要求度が大
きい。For this reason, semiconductor elements are mounted directly on a heat dissipating substrate, but in this case, a problem arises due to the difference in thermal expansion between the heat dissipating substrate and the semiconductor element. If the difference in coefficient of thermal expansion is large,
The silicon substrate of a semiconductor device is subjected to excessive stress, which can cause cracks in the substrate or abnormal operation. Therefore, there is a great demand in industry for a method of obtaining a heat dissipating substrate that has both low thermal expansion and high heat dissipation.
従来、粉末状のＷ（タングステン）やＭｏ （モリブデ
ン）を焼結させた焼結基板に、Ｃｕ（銅）を含浸させて
放熱性基板を得る方法が実施されていた。しかしながら
、この製造工程は煩雑であり、Ｃｕの充分な含浸も困難
である。すなわち、Ｗ、ＭＯの粉末成形工程においては
、難加工性ゆえに個々の基板形状毎に１つ１つ成形する
必要があるため、コスト高になっていた。さらに、その
焼結体においては、粉末同志が融着し空隙が少ないため
、ＷやＭｏのＣｕとのヌレ性は良好であるにもかかわら
ず、Ｃｕを焼結体内部へ充分に含浸させることができな
い。そのため、熱伝導性が悪くて放熱性を充分に得るこ
とが困難であった。Conventionally, a method of obtaining a heat dissipating substrate has been carried out by impregnating Cu (copper) into a sintered substrate obtained by sintering powdered W (tungsten) or Mo (molybdenum). However, this manufacturing process is complicated and it is difficult to sufficiently impregnate Cu. That is, in the powder molding process of W and MO, it is necessary to mold each individual substrate shape one by one due to the difficulty of processing, resulting in high costs. Furthermore, in the sintered body, the powders are fused together and there are few voids, so although the wettability of W and Mo with Cu is good, it is difficult to sufficiently impregnate Cu into the inside of the sintered body. I can't. Therefore, it has poor thermal conductivity, making it difficult to obtain sufficient heat dissipation.
他に実施されている放熱性基板の製造方法として、Ｃｕ
板とインバー板（たとえば、Ｆｅが約６４重量％でＮｉ
が３６重量％の合金板）とによりクラッド基板を得るよ
うにするものがある。このクラッド基板は、Ｃｕ板で放
熱させインバー板で膨張を抑える構造になっている。し
かし、前記インバー板は、膨張抑制のために一定以上の
厚さを有していなければならないため、インバー板に要
求される同板面に垂直な方向への放熱性が充分に得られ
ないという問題があった。Another method of manufacturing heat dissipating substrates that has been implemented is Cu
plate and Invar plate (for example, about 64% by weight Fe and Ni
36% by weight) to obtain a clad substrate. This clad board has a structure in which heat is radiated by a Cu plate and expansion is suppressed by an Invar plate. However, since the Invar plate must have a thickness above a certain level in order to suppress expansion, it is said that the heat dissipation required for the Invar plate in the direction perpendicular to the plate surface cannot be achieved sufficiently. There was a problem.
一方、セラミックス材料などの低熱膨張性金属材料の繊
維からなる基材に、放熱性の良い金属材料を含浸させる
ことで放熱性基板を得る方法は、特願昭６ｌ−２６６２
ｆ３７号出願に記載されている。この方法によると、前
記繊維を圧力成形して基材とするが、このようにすると
、繊維が基材の全体に均一に配分されにり＜、繊維は基
材の外周において高密度になりやすい。これは、繊維の
体積率が多い程、前記高密度化して含浸材料は基材内部
にまで充分に入りにくくなり、その結果、繊維が不均一
で内部に空隙の多い放熱性基板となる。たとえば、低熱
膨張性金属材料として、低熱伝導性インバーを用いた場
合、圧延後においても放熱性基板の場所によっては外周
に繊維が偏在しており、また、基板内部に多くの空隙が
存在するため、熱の通りが遮断された形になって熱伝導
が極端に阻害される。その結果、基板に高い放熱性をも
たせることができなかった。On the other hand, a method of obtaining a heat dissipating substrate by impregnating a base material made of fibers of a low thermal expansion metal material such as a ceramic material with a metal material with good heat dissipation is disclosed in Japanese Patent Application No. 6l-2662.
It is described in the F37 application. According to this method, the fibers are pressure-molded to form a base material, but in this way, the fibers are distributed uniformly throughout the base material, and the fibers tend to be denser at the outer periphery of the base material. . This is because the higher the volume fraction of fibers, the higher the density and the more difficult it is for the impregnating material to fully penetrate into the interior of the base material, resulting in a heat-dissipating substrate with non-uniform fibers and many voids inside. For example, when low thermal conductivity Invar is used as a low thermal expansion metal material, even after rolling, fibers are unevenly distributed on the outer periphery depending on the location of the heat dissipating substrate, and there are many voids inside the substrate. , the passage of heat is blocked and heat conduction is extremely inhibited. As a result, it was not possible to provide the substrate with high heat dissipation.
この発明は、前記事情に鑑みてなされたものであり、そ
の課題とするところは、低熱膨張性でありながら高放熱
性を発揮する放熱性基板を得るようにすることにある。This invention has been made in view of the above circumstances, and its object is to obtain a heat dissipating substrate that exhibits high heat dissipation properties while having low thermal expansion.
前記課題を解決するため、請求項１記載の発明にかかる
放熱性基板の製造方法は、低熱膨張性金属材料の繊維と
放熱性の良い金属材料とを混合したものを加圧成形し、
同加圧成形体を、前記放熱性の良い金属材料の融点直下
の温度に加熱しておいて、別途溶融した放熱性の良い金
属材料を前記加圧成形体に注入するようにする。In order to solve the above problem, a method for manufacturing a heat dissipating substrate according to the invention as set forth in claim 1 includes press-molding a mixture of fibers of a low thermal expansion metal material and a metal material with good heat dissipation.
The press-molded body is heated to a temperature just below the melting point of the metal material with good heat dissipation, and a separately molten metal material with good heat dissipation is injected into the press-formed body.
請求項２記載の発明にかかる放熱性基板の製造方法は、
低熱膨張性金属材料の繊維の混合割合が５０〜８０体積
％であり、放熱性の良い金属材料がＣｕであり、融点直
下の温度が、Ｃｕの融点温度より５０℃低い温度から前
記Ｃｕの融点温度までの範囲内とされる。The method for manufacturing a heat dissipating substrate according to the invention according to claim 2 includes:
The mixing ratio of the fibers of the low thermal expansion metal material is 50 to 80% by volume, the metal material with good heat dissipation is Cu, and the temperature just below the melting point is 50 ° C lower than the melting point of Cu. It is considered to be within the range of up to the temperature.
低熱膨張性金属材料の繊維と放熱性の良い金属材料とを
混合すると、低熱膨張性金属繊維が放熱性の良い金属材
料の中に均一に分散する。これらの加圧成形体を、前記
放熱性の良い金属材料の融点直下の温度に加熱しておい
て、別途溶融した放熱性の良い金属材料を前記加圧成形
体に注入するようにすると、前記成形体の時点で放熱性
の良い金属材料につながりが足りなくても前記注入によ
り放熱性の良い金属材料が連続的につながるようになる
。When fibers of a low thermal expansion metal material and a metal material with good heat dissipation are mixed, the low thermal expansion metal fibers are uniformly dispersed in the metal material with good heat dissipation. These press-molded bodies are heated to a temperature just below the melting point of the metal material with good heat dissipation properties, and a separately molten metal material with good heat dissipation properties is injected into the press-formed bodies. Even if the metal materials with good heat dissipation properties are not sufficiently connected at the time of molding, the metal materials with good heat dissipation properties can be continuously connected by the injection.
以下に、この発明の詳細な説明する。 The present invention will be explained in detail below.
放熱性基板は、次のようにして製造される。The heat dissipating substrate is manufactured as follows.
まず、低熱膨張性金属材料（セラミックス材料を含む）
としては、インバー、Ｗ、、Ｍｏ、Ｃ，Ｓｉｃなどが挙
げられる。First, low thermal expansion metal materials (including ceramic materials)
Examples include Invar, W, Mo, C, and Sic.
繊維の態様としては、ウィスカのようなもの、長繊維や
短繊維のようなもの、あるいは、単繊維や撚線のカーボ
ン繊維を用いて織った織布状のようなものなどがある。The fibers may be in the form of whiskers, long fibers or short fibers, or woven fabrics made from single fibers or twisted carbon fibers.
たとえば、インバーをビビリ切削することにより、径が
１００μｌ、長さが２ｎの繊維をつくることができる。For example, by chattering Invar, fibers with a diameter of 100 μl and a length of 2n can be made.
放熱性の良い金属材料としてＣｕが挙げられる、この放
熱性の良い金属材料も前記低熱膨張性金属材料と同様に
繊維にすることができる。An example of a metal material with good heat dissipation properties is Cu. This metal material with good heat dissipation properties can also be made into fibers in the same manner as the low thermal expansion metal material.
これら２種類の繊維を充分に混合し、第１図にみる金型
５に入れて所望形状の基材に成形する。These two types of fibers are thoroughly mixed, placed in a mold 5 shown in FIG. 1, and molded into a base material of a desired shape.
繊維同志の成形体１において、成形圧力の大きいところ
は繊維同志の隙間は詰まるようになるが、内部には未だ
隙間が残っている。次に、この基材１をヒーター２でも
って放熱性の良い金属材料の融点直下５０℃以内の温度
範囲に加熱し、この状態の基材１に対して、放熱性の良
い金属材料、たとえば、前記Ｃｕの溶湯３を、金型５の
可動型４により圧力を加えつつ注入させるようにする。In the molded article 1 made of fibers, the gaps between the fibers close up in areas where the molding pressure is high, but gaps still remain inside. Next, this base material 1 is heated with a heater 2 to a temperature range of 50° C. or less just below the melting point of a metal material with good heat dissipation. The molten Cu metal 3 is injected while applying pressure by the movable mold 4 of the mold 5.
従来のような粉末焼結体ではなく、また、基材中の放熱
性の良い金属材料も既に融点近くにあるので、溶融Ｃｕ
の侵入する道筋ができ、Ｃｕは基材ｌの内部へ充分に侵
入するようになる。It is not a powder sintered body like the conventional one, and the metal material with good heat dissipation in the base material is already close to its melting point, so it is not a powder sintered body.
A path is created for Cu to penetrate into the base material 1, and Cu can sufficiently penetrate into the interior of the base material 1.
基材における低熱膨張性金属繊維の占有率（含有率）は
、成形時の圧力、繊維の態様などによって調整すること
ができるが、放熱性基板としては、通常、５０〜８０体
積％とされる。占有率が５０体積％を下回ると、Ｃｕの
膨張を抑える効果が得にく（なる。占有率が８０体積％
を上回ると、充分な放熱効果を得る上で好ましくない。The occupancy (content) of low thermal expansion metal fibers in the base material can be adjusted by the pressure during molding, the form of the fibers, etc., but as a heat dissipating substrate, it is usually 50 to 80% by volume. . When the occupancy rate is less than 50% by volume, it becomes difficult to obtain the effect of suppressing the expansion of Cu.
If it exceeds , it is not preferable to obtain a sufficient heat dissipation effect.
これにより得られた基板は、圧延により適宜必要な厚み
にしたり、所望の形状に切断することもでき、加工性が
良い。圧延を行なう場合、圧延前の基板の厚みが、たと
えば、３０〜５０ｍの時、圧延後の厚みを１鶴程度とす
ることもできる。The substrate thus obtained can be rolled to a desired thickness or cut into a desired shape, and has good workability. When rolling is performed, when the thickness of the substrate before rolling is, for example, 30 to 50 m, the thickness after rolling can be about 1 crane.
このように、この発明にかかる放熱性基板の基材は、高
密度に放熱性の良い金属材料の含浸が容易で、含浸後の
加工性も良いため、放熱性基板の製造が簡単になる。As described above, the base material of the heat dissipating substrate according to the present invention can be easily impregnated with a metal material having good heat dissipation properties at a high density, and the processability after impregnation is also good, so that the production of the heat dissipating substrate is facilitated.
このように作成された放熱性基板は、半導体素子を直接
取付けたり、あるは、その上にセラミックス絶縁層を形
成してから素子を取付けたりするほか、絶縁層上に配線
パターン形成や部品搭載するような使い方もできる。The heat dissipating board created in this way can be used to directly attach semiconductor elements, or to form a ceramic insulating layer on it and then attach the element, or to form wiring patterns and mount components on the insulating layer. You can also use it like this.
次により具体的実施例の説明を行なう。Next, a more specific example will be explained.
（実施例１）
直径１１００Ａ１、長さ２１１のインバーの短繊維と、
直径１１００ｕ、長さ２ＮのＣｕの短繊維を８０体積％
と２０体積％の割合で混合したのち金型に入れ、１ｔｏ
ｎ／ｃＪの圧力で成形して基材を得る。次に、金型温度
を１０５０〜１０７０℃に設定し、Ｃｕの溶湯を０．５
ｔｏｎ／−の圧力でもって含浸させた。Ｃｕの酸化を防
ぐため、この含浸処理は、Ａｒガス雰囲気中で行なった
。含浸後の厚さ３０鶴の基材を厚さ１１になるように圧
延して放熱性基板を完成した。このときインバーの含有
量は５０体積％であった。(Example 1) Invar short fibers with a diameter of 1100 A1 and a length of 211 mm,
80% by volume of Cu short fibers with a diameter of 1100u and a length of 2N.
After mixing at a ratio of 20 volume% with
A base material is obtained by molding at a pressure of n/cJ. Next, the mold temperature was set to 1050-1070℃, and the molten Cu was heated to 0.5℃.
It was impregnated with a pressure of ton/-. In order to prevent Cu from oxidizing, this impregnation treatment was performed in an Ar gas atmosphere. The base material having a thickness of 30 mm after impregnation was rolled to a thickness of 11 mm to complete a heat dissipating substrate. At this time, the content of Invar was 50% by volume.
（実施例２）
直径１０〜２０μで２〜５１１のカーボン繊維とＣｕの
繊維を７０体積％と３０体積％になるようにして充分に
混合した後、金型に入れ、１ｔｏｎ／−の圧力で成形し
て基材を得た。次に、金型温度は１０５０〜１０７０℃
に設定し、Ｃｕの溶湯をＱ、５ｔｏｎ／ｃａｌの圧力で
もって含浸させた。ＣＵの酸化を防ぐため、この含浸処
理は、Ａｒガス雰囲気中で行なった。含浸後の厚さ３０
ｕの基材を厚さ１１になるように圧延して放熱性基板を
完成した。このときカーボンの含有量は４５体積％であ
った。(Example 2) Carbon fibers with diameters of 10 to 20μ and 2 to 511 carbon fibers and Cu fibers were thoroughly mixed at 70% by volume and 30% by volume, and then placed in a mold and heated at a pressure of 1 ton/-. A base material was obtained by molding. Next, the mold temperature is 1050-1070℃
molten Cu was impregnated with a pressure of Q, 5 ton/cal. In order to prevent oxidation of CU, this impregnation treatment was performed in an Ar gas atmosphere. Thickness after impregnation: 30
A heat dissipating substrate was completed by rolling the base material u to a thickness of 11 mm. At this time, the carbon content was 45% by volume.
（実施例３）
直径１００ｍ、長さ３〜４ＲのＷとＣｕの各繊維を、８
０体積％と２０体積％の割合にして混合したのち金型に
入れ、１ｔｏｎ／ｃｆｆｌの圧力で成形して基材を得た
。次に、金型温度は１０５０〜１０７０℃に設定し、Ｃ
ｕの溶湯を０．５ｔｏｎ／ｃＪの圧力でもって含浸させ
た。Ｃｕの酸化を防ぐため、この含浸処理は、Ａｒガス
雰囲気中で行なった。含浸後の厚さ３０ｍの基材を厚さ
１ｆｉになるように圧延して放熱性基板を完成した。こ
のときＷの含有量は４０体積％であった。(Example 3) Each fiber of W and Cu with a diameter of 100 m and a length of 3 to 4 R was
After mixing at a ratio of 0% by volume and 20% by volume, the mixture was placed in a mold and molded at a pressure of 1 ton/cffl to obtain a base material. Next, the mold temperature is set to 1050-1070℃, and
It was impregnated with molten metal u at a pressure of 0.5 ton/cJ. In order to prevent Cu from oxidizing, this impregnation treatment was performed in an Ar gas atmosphere. After impregnation, the 30 m thick base material was rolled to a thickness of 1 fi to complete a heat dissipating substrate. At this time, the content of W was 40% by volume.
実施例１〜３の放熱性基板の密度を測定し、同密度と理
想密度との比たる充填率を求めた。併せて、つぎのよう
な比較例１〜３の充填率も求めた（比較例１）
実施例１において成形する繊維をインバーのみで製造し
た放熱性基板。The densities of the heat dissipating substrates of Examples 1 to 3 were measured, and the filling ratio was determined as a ratio between the same density and the ideal density. In addition, the following filling rates of Comparative Examples 1 to 3 were also determined (Comparative Example 1) A heat dissipating substrate in which the fibers to be molded in Example 1 were manufactured using only Invar.
（比較例２）
実施例２において成形する繊維をカーボンのみで製造し
た放熱性基板。(Comparative Example 2) A heat dissipating substrate in which the fibers molded in Example 2 were made only of carbon.
（比較例３）
実施例３において成形する繊維をＷのみで製造した放熱
性基板。(Comparative Example 3) A heat dissipating substrate in which the fibers to be molded in Example 3 were manufactured using only W.
測定結果は、第１表のとおりである。The measurement results are shown in Table 1.
第１表
第１表にみるように、実施例１〜３の放熱性基板は、比
較例１〜３の放熱性基板と比べて、高密度に充填されて
いることが分かる。Table 1 As shown in Table 1, it can be seen that the heat dissipating substrates of Examples 1 to 3 are packed more densely than the heat dissipating substrates of Comparative Examples 1 to 3.
以上述べたように、この発明にかかる放熱性基板の製造
方法は、低熱膨張性でありながら高放熱性が発揮される
放熱性基板を得ることができるようになった。As described above, the method for manufacturing a heat-dissipating substrate according to the present invention makes it possible to obtain a heat-dissipating substrate that exhibits high heat dissipation while having low thermal expansion.
第１図は、この発明にかかる放熱性基板の製造方法の一
実施例にかかり成形体に別途放熱性の良い金属材料の溶
湯を注入する様子をあられす側断面図である。
１・・・基材 ２・・・ヒーター ３・・・Ｃｕの溶湯
４・・・可動金型 ５・・・金型FIG. 1 is a side sectional view showing a state in which a molten metal material having good heat dissipation is separately injected into a molded body according to an embodiment of the method for manufacturing a heat dissipating substrate according to the present invention. 1... Base material 2... Heater 3... Molten Cu 4... Movable mold 5... Mold
Claims (1)
とを混合したものを加圧成形し、同加圧成形体を、前記
放熱性の良い金属材料の融点直下の温度に加熱しておい
て、別途溶融した放熱性の良い金属材料を前記加圧成形
体に注入するようにする放熱性基板の製造方法。 ２低熱膨張性金属材料の繊維の混合割合が５０〜８０体
積％であり、放熱性の良い金属材料がＣｕであり、融点
直下の温度が、Ｃｕの融点温度より５０℃低い温度から
前記Ｃｕの融点温度までの範囲内とされる請求項１記載
の放熱性基板の製造方法。[Claims] 1. A mixture of fibers of a low thermal expansion metal material and a metal material with good heat dissipation is pressure-molded, and the press-molded product is heated to a temperature just below the melting point of the metal material with good heat dissipation. A method for manufacturing a heat dissipating substrate, which comprises heating the material to a temperature and injecting a separately melted metal material with good heat dissipation into the press-molded body. 2. The mixing ratio of the fibers of the low thermal expansion metal material is 50 to 80% by volume, the metal material with good heat dissipation is Cu, and the temperature just below the melting point of the Cu is 50°C lower than the melting point of Cu. The method for manufacturing a heat dissipating substrate according to claim 1, wherein the temperature is within a range up to the melting point temperature.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25119289A JPH03111524A (en) | 1989-09-26 | 1989-09-26 | Production of heat radiative substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25119289A JPH03111524A (en) | 1989-09-26 | 1989-09-26 | Production of heat radiative substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03111524A true JPH03111524A (en) | 1991-05-13 |
Family
ID=17219056
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP25119289A Pending JPH03111524A (en) | 1989-09-26 | 1989-09-26 | Production of heat radiative substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03111524A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1997001187A1 (en) * | 1995-06-23 | 1997-01-09 | Toho Kinzoku Co., Ltd. | Method of manufacture of material for semiconductor substrate, material for semiconductor substrate, and package for semiconductor |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4942504A (en) * | 1972-08-30 | 1974-04-22 | ||
| JPS52120205A (en) * | 1976-04-03 | 1977-10-08 | Setsuo Yamamoto | Process for production of whiskerrreinforced composite material |
| JPS5834148A (en) * | 1981-08-24 | 1983-02-28 | Mitsubishi Heavy Ind Ltd | Production of composite material of fiber reinforced light metal matrix |
| JPS63120448A (en) * | 1986-11-08 | 1988-05-24 | Matsushita Electric Works Ltd | Substrate for heat dissipation |
-
1989
- 1989-09-26 JP JP25119289A patent/JPH03111524A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4942504A (en) * | 1972-08-30 | 1974-04-22 | ||
| JPS52120205A (en) * | 1976-04-03 | 1977-10-08 | Setsuo Yamamoto | Process for production of whiskerrreinforced composite material |
| JPS5834148A (en) * | 1981-08-24 | 1983-02-28 | Mitsubishi Heavy Ind Ltd | Production of composite material of fiber reinforced light metal matrix |
| JPS63120448A (en) * | 1986-11-08 | 1988-05-24 | Matsushita Electric Works Ltd | Substrate for heat dissipation |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1997001187A1 (en) * | 1995-06-23 | 1997-01-09 | Toho Kinzoku Co., Ltd. | Method of manufacture of material for semiconductor substrate, material for semiconductor substrate, and package for semiconductor |
| US5905938A (en) * | 1995-06-23 | 1999-05-18 | Toho Kinzoku Co., Ltd. | Method of manufacturing a semiconductor substrate material |
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