JPH0311064U - - Google Patents
Info
- Publication number
- JPH0311064U JPH0311064U JP7224389U JP7224389U JPH0311064U JP H0311064 U JPH0311064 U JP H0311064U JP 7224389 U JP7224389 U JP 7224389U JP 7224389 U JP7224389 U JP 7224389U JP H0311064 U JPH0311064 U JP H0311064U
- Authority
- JP
- Japan
- Prior art keywords
- raw material
- furnace
- silicon single
- single crystal
- heat treatment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7224389U JPH0640592Y2 (ja) | 1989-06-20 | 1989-06-20 | シリコン単結晶の成長装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7224389U JPH0640592Y2 (ja) | 1989-06-20 | 1989-06-20 | シリコン単結晶の成長装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH0311064U true JPH0311064U (enrdf_load_html_response) | 1991-02-01 |
JPH0640592Y2 JPH0640592Y2 (ja) | 1994-10-26 |
Family
ID=31610011
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7224389U Expired - Lifetime JPH0640592Y2 (ja) | 1989-06-20 | 1989-06-20 | シリコン単結晶の成長装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0640592Y2 (enrdf_load_html_response) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110760931B (zh) * | 2019-11-22 | 2024-03-19 | 中国电子科技集团公司第十三研究所 | 一种利用铟磷混合物制备磷化铟晶体的系统 |
-
1989
- 1989-06-20 JP JP7224389U patent/JPH0640592Y2/ja not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPH0640592Y2 (ja) | 1994-10-26 |
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