JPH03103265U - - Google Patents
Info
- Publication number
- JPH03103265U JPH03103265U JP1200890U JP1200890U JPH03103265U JP H03103265 U JPH03103265 U JP H03103265U JP 1200890 U JP1200890 U JP 1200890U JP 1200890 U JP1200890 U JP 1200890U JP H03103265 U JPH03103265 U JP H03103265U
- Authority
- JP
- Japan
- Prior art keywords
- crucible
- inner crucible
- single crystal
- quartz tube
- pulling device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000013078 crystal Substances 0.000 claims description 3
- 239000010453 quartz Substances 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 230000002093 peripheral effect Effects 0.000 claims 2
- 239000000155 melt Substances 0.000 claims 1
- 238000003466 welding Methods 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Description
第１図は本考案の一実施例を示す拡大断面図、
第２図は本考案に係る内ルツボの斜視図、第３図
は従来の内ルツボの斜視図である。
１……成長単結晶、２……融液、３……引上げ
ワイヤ、４……外ルツボ、５……内ルツボ、６…
…ヒータ、７……石英チユーブ、８……溶接部、
Ｌ……間隔。
FIG. 1 is an enlarged sectional view showing an embodiment of the present invention;
FIG. 2 is a perspective view of an inner crucible according to the present invention, and FIG. 3 is a perspective view of a conventional inner crucible. 1... Growing single crystal, 2... Melt, 3... Pulling wire, 4... Outer crucible, 5... Inner crucible, 6...
...Heater, 7...Quartz tube, 8...Welding part,
L... Interval.
Claims (1)
内ルツボと、 該内ルツボ壁部に設けられた貫通孔に連なつて
内ルツボの外周壁に延在する石英チユーブと、 を具備した単結晶引上げ装置であつて、 前記石英チユーブが、２００mm以内の間隔をお
いて前記内ルツボの外周壁に部分的に溶接されて
いることを特徴とする単結晶引上げ装置。[Scope of Claim for Utility Model Registration] An outer crucible for storing a melt, an inner crucible arranged concentrically within the outer crucible, and a through hole provided in a wall of the inner crucible. A single crystal pulling device comprising: a quartz tube extending to the outer peripheral wall of the inner crucible; and the quartz tube is partially welded to the outer peripheral wall of the inner crucible at intervals of 200 mm or less. A single crystal pulling device characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1200890U JPH03103265U (en) | 1990-02-09 | 1990-02-09 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1200890U JPH03103265U (en) | 1990-02-09 | 1990-02-09 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03103265U true JPH03103265U (en) | 1991-10-28 |
Family
ID=31515509
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1200890U Pending JPH03103265U (en) | 1990-02-09 | 1990-02-09 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03103265U (en) |
-
1990
- 1990-02-09 JP JP1200890U patent/JPH03103265U/ja active Pending