JPH03103264U - - Google Patents
Info
- Publication number
- JPH03103264U JPH03103264U JP1124690U JP1124690U JPH03103264U JP H03103264 U JPH03103264 U JP H03103264U JP 1124690 U JP1124690 U JP 1124690U JP 1124690 U JP1124690 U JP 1124690U JP H03103264 U JPH03103264 U JP H03103264U
- Authority
- JP
- Japan
- Prior art keywords
- quartz ampoule
- single crystal
- semiconductor single
- manufacturing apparatus
- raw material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010453 quartz Substances 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 239000003708 ampul Substances 0.000 claims description 5
- 239000013078 crystal Substances 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 claims description 4
- 150000001875 compounds Chemical class 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 230000002265 prevention Effects 0.000 claims description 2
- 239000002994 raw material Substances 0.000 claims 2
- 230000003014 reinforcing effect Effects 0.000 claims 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Description
第１図は本考案の化合物半導体単結晶製造装置
の一実施例を示す要部断面図、第２図は第１図の
Ａ−Ａ′線断面図である。
１……石英アンプル、２……石英ボート、３…
…ＧａＡｓ融液、８……変形防止治具。
FIG. 1 is a sectional view of a main part of an embodiment of the compound semiconductor single crystal manufacturing apparatus of the present invention, and FIG. 2 is a sectional view taken along the line A-A' in FIG. 1...Quartz ampoule, 2...Quartz boat, 3...
...GaAs melt, 8...Deformation prevention jig.
Claims (1)
プル内に配置し、該原料融液をその一端側から徐
々に固化させて半導体単結晶を育成する化合物半
導体単結晶製造装置において、前記石英アンプル
の内側に、該石英アンプルと相似の形状を有し、
該石英アンプルを補強して熱変形を抑止する変形
防止治具が設けてあることを特徴とする化合物半
導体単結晶製造装置。 In a compound semiconductor single crystal manufacturing apparatus in which a boat containing a raw material melt is placed in a sealed quartz ampoule and the raw material melt is gradually solidified from one end side to grow a semiconductor single crystal, the quartz ampoule is It has a similar shape to the quartz ampoule on the inside,
A compound semiconductor single crystal manufacturing apparatus characterized in that a deformation prevention jig is provided for reinforcing the quartz ampoule and suppressing thermal deformation.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1124690U JPH03103264U (en) | 1990-02-07 | 1990-02-07 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1124690U JPH03103264U (en) | 1990-02-07 | 1990-02-07 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03103264U true JPH03103264U (en) | 1991-10-28 |
Family
ID=31514780
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1124690U Pending JPH03103264U (en) | 1990-02-07 | 1990-02-07 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03103264U (en) |
-
1990
- 1990-02-07 JP JP1124690U patent/JPH03103264U/ja active Pending