JPH0310075A - Hydrogenated amorphous silicon film - Google Patents

Abstract

PURPOSE:To obtain the hydrogenated amorphous silicon film which has high light transmittability, hardness and fixability to a photosensitive layer and does not generate image flow under high humidity by specifying a compsn. consisting of Si, C and H and specifying a laser Raman spectral characteristic. CONSTITUTION:The compsn. of the compd. expressed by general formula a- Si1-xCX:H is specified to 0.4<=x<=0.8. The ratio (TO/TA) of the peak (TO) appearing at about 480cm<-1> observed in laser Raman spectral measurement using a stimulating laser of Ar<+> 488nm and the peak (TA) height appearing at about 150cm<-1> is so determined as to attain >=2.0. This compd. is formed on a substrate consisting of Al, etc., heated to about 250 deg.C by converting gaseous raw materials, such as Si2H6 and C3H8, under about 0.1Torr pressure to plasma and supplying hydrogen radicals thereto. The hydrogenated amorphous silicon film for electrophotographic sensitive bodies which has the high light transmittability, hardness and fixability, does not generate the image flow under the high humidity without a heating source, has the dense structure and is free from the deterioration in the surface by corona irradiation at and under the high temp. and high humidity is obtd. in this way.

Description

[Detailed Description of the Invention] [Summary] The purpose of this invention is to reduce surface deterioration due to corona irradiation at high temperatures with respect to hydrogenated amorphous silicon films with high structural density, and to reduce surface deterioration due to corona irradiation at high temperatures. -x C,: The compound represented by l has a composition of 0.4≦x≦0.8, and Ar” 48
The ratio (TO/T^) of the height of the peak (TO) appearing near 480 cm'' and the height of the peak (TA) appearing near 150 am-' observed in laser Raman spectroscopy using an 8n-excitation laser is 2. The configuration is characterized in that the value is 0 or more.

[Industrial application field]

The present invention relates to a hydrogenated amorphous silicon film with high structural density.

[Conventional technology]

Thin-film hydrogenated amorphous materials, especially hydrogenated amorphous silicon (hereinafter referred to as a-5i:H), are highly durable and non-polluting, so they are suitable for use in electrophotographic devices that form images by irradiating information light. It is used as an electrophotographic photoreceptor.

As shown in FIG. 9, this electrophotographic photoreceptor includes a carrier injection blocking layer 103, a photosensitive layer 104 consisting of a carrier generation layer and a carrier transport layer, on a conductive substrate 102 made of aluminum (A j ) or the like. , and a surface protective layer 105 are sequentially laminated.

This carrier injection blocking layer is made of p-type or n-type a-Si.
:H, a-SiO:H, a-5iC:H, a-SiN:
H is used, and a-5i:H is used for the photosensitive layer. The surface protective layer is a-5tC:H, a-SiN:H+ a-C
:H, a-C:H:F is used. In particular, the surface protective layer has a wide band gap such as a-5iC:H or a-5iN:
Although H is used, a-SiC:H is superior in terms of hardness.

FIG. 10 is a diagram showing a schematic configuration of a conventional RF-CVD apparatus. In FIG. 10, a substrate 100 on which an a-5iC:H film is formed is mounted on a second electrode 27 that is grounded within a vacuum container 26.

This vacuum container 26 is depressurized by a mechanical booster pump 32 and a low-pressure pump 33 connected to the outlet section 116. On the other hand, the vacuum container 26 has a vibrator 1 attached to the inlet portion 114.
18 are connected. This vibrator 118 is connected to a gas cylinder 1. which stores disilane 5iJi via a flow rate regulator 5a. A gas cylinder 2 containing propane CJs via a flow rate regulator 5b. 3. A gas cylinder that stores hydrogen Ht via a flow rate regulator 5C. A gas cylinder 4 containing argon ^r is connected via a flow rate regulator 5d.

The amount of gas stored in each of these gas cylinders 1 to 4 is determined by the adjustment results of the respective flow rate regulators 58 to 5d.
The raw material gas is introduced into the vacuum container 26 through the vibrator 118.

In this state, when RF power is supplied from the RP power source 31 to the first electrode 29, plasma of the raw material gas is formed between the first and second electrodes 27.29, and a-
A SiC:H film is formed.

[Problem to be solved by the invention]

However, if the surface layer contains Si.

Since Si reacts with oxygen in the air to form hydrophilic SiO, image blurring is likely to occur at high humidity.

For this reason, methods are being used to heat the photoreceptor, or to form a film that does not contain Si in the surface layer.

However, when the photoreceptor is heated and used, it is necessary to incorporate a heating source or the like into the electrophotographic apparatus, which causes the problem that the structure of the electrophotographic apparatus becomes complicated and expensive.

There is a problem that it cannot be put to practical use.

[Means to solve the problem]

In order to achieve this object, the present invention has the general formula a-Si+-
Carbon-containing hydrogenated amorphous silicon, denoted by -CM:H, was processed using an Ar''488n laser.
The ratio (TO/T^) of the height of the peak (TO) that appears near 480 CII-' observed at ゛' and the height of the peak (TA) that appears near 150 cm-' (TO/T^),
It is characterized in that the carbon content (x) is 0.4≦x≦0.8.

[For production]

The applicant has reported that a-Si by corona irradiation in high humidity
:H The behavior of the photoreceptor surface was measured using high-sensitivity reflection FT-IR (IR
-RAS) and contact angle measurements, the surface layer of the a-Si:H photoreceptor in high humidity! ! 11 (a −
When a S i C: H film) is exposed to corona irradiation, 5i-0) 1. H-OH, 5t-0-9it N
An increase in the 0s- and C05- peaks was observed, and it was found that these were the cause of increasing the wettability. That is, ozone (03) generated by corona irradiation directly oxidizes the surface of the photoreceptor and increases the number of 5i-0-Si bonds.

At the same time, adsorption groups such as NO3- and CO5-1-OH are generated, and these adsorption groups are adsorbed as hydrates on the Si surface. As a result, the polarity of the surface increases and the runiness increases. There, H! which is a polar molecule! 0 is adsorbed. When charged in this state, the charge flows, so [image drift (b
Therefore, as a method of creating an a-Si photoconductor that is resistant to humidity, we cannot use a material that does not contain St for the surface due to the characteristics of the film, so we are currently using a surface protective layer. a used as
-3i, Cx: The water repellency was improved by increasing the carbon content (x) of the H film.

In addition, simply a-Sit-x with a high carbon content (x)
The cll:H film does not have a sufficient ability to block carriers as a surface protective layer. Therefore, the present invention provides an a-St,xC:H film with a high carbon content (x) and a sufficiently high blocking function as a surface protective layer.
a-5i1-x C:H with high carbon content (x≧0.4) has a peak (TO) height that appears around 480c11-' observed in Ar"b spectrometry and a peak (TO) that appears around 150cm-' TA) The height ratio (TO/TA) was set to be 2.0 or more.

〔Example〕

FIGS. 3 and 4 are explanatory views of a thin film forming apparatus for forming a hydrogenated amorphous silicon film according to the present invention.

In the figure, a thin film forming apparatus 110 includes a first inlet section 11
4, a second inlet section 115, and an outlet section 116.

The first artificial part 114 is connected to one end of the inlet vibrator 118, and the other end of the inlet vibrator 118 is connected to the gas cylinders 1 and 2.
．． 6.7 is connected.

The outlet section 116 is connected to a vacuum pump including a low-resolution pump 33 and a mechanical booster pump 32.

The inlet vibrator 118 includes a gas cylinder l that stores disilane (SiJ) via a flow rate regulator 5a, and a flow rate regulator 5b.
Gas cylinder containing propane (C3H1l) via 2. and diborane (Bell&
) is connected to the gas cylinder 6 that stores the gas. Incidentally, diborane (awl) is diluted with helium He and stored in the gas cylinder 6 so as to have a concentration of 100 pp- with respect to lie.

A hydrogen radical generating section 120 is connected to the second inlet section 115 . The hydrogen radical generating section 120 has one end 23a connected to the second inlet section 115, and the other end 23b connected to a gas cylinder 7, which will be described later.
a quartz tube 23 with a diameter of 30a+ge through which gas is passed;
A gas cylinder 7 that is connected to the hydrogen gas inlet 25 at the other end 23b of the quartz tube 23 through a flow rate regulator 5f and that stores hydrogen gas, and a microwave oscillator 21 that oscillates microwaves at 2.45 GHz. , a waveguide 22 that guides the microwave to the quartz tube 23; and a waveguide 22 that covers the quartz tube 23 so that the microwave guided by the waveguide 22 is irradiated all around the quartz tube 23 and over the entire lengthwise area. Cylindrical part 24a,
24b, and a plasma generating furnace 24 for generating hydrogen gas plasma passing through the quartz tube 23.

This thin film forming apparatus 110 connects first and second electrodes 29 and 27 to a vacuum vessel 26 so as to form a limited discharge zone.
It is prepared within. The first and second electrodes 29 and 27 are made of a conductive material such as stainless steel.

The first electrode 8i29 has an opening 29a through which the raw material gas supplied through the inlet portion 114 flows into the vacuum container 26. As shown in FIG. 4, the number of openings 2!1a in the upper and lower portions is increased and the number in the middle portion is decreased so that the raw material gas supplied from the inlet portion 114 is uniformly released in the longitudinal direction of the substrate 100. It is.

The first electrode 29 is an impedance matching circuit (not shown),
RF high frequency power supply 3 through blocking capacitor 30
Connected to 1. RF power supply 31 (13,56MHz
) is grounded to earth.

Further, the second electrode 27 has a flat portion 27a, is attached to the bottom inside the vacuum container 26, and is grounded.

The substrate 100 is placed on this plane part 27a, and the power supply 28a
It is heated by a heater 28 driven by.

The photoreceptor having the configuration shown in FIG. 9 is produced by the following method using the thin film forming apparatus shown in FIGS. 3 and 4.

(1) First, under atmospheric pressure, the vacuum container 26
A substrate 100 made of aluminum AJ or the like is placed on the second electrode 27 facing the first electrode 29 and forming the Toyohashi Shibetsu 34 between the first electrode 29 and the first electrode 29 .

(2) Next, the vacuum vessel 26 is evacuated by the vacuum pumps 32, 33 through the outlet 116 such that the pressure inside the vacuum vessel 26 is lower than 0.2 torr.

Then, the substrate 100 is heated to a predetermined temperature (250° C.) by the heater 28. And vacuum
The bombs 32 and 33 are continuously driven to maintain a value of 0.2 torr while the source gas is introduced into the vacuum vessel 26.

(3) Next, only the flow rate regulators 5a and 5e are opened, and only the disilane 5tfH& from the gas cylinder 1 and the diborane BzHb from the gas cylinder 6 are opened in the flow rate regulator 5a+.
5e+vibe 118. Inlet section 114 and first electrode 2
9 into the vacuum container 26 through the opening 29a.

Disilane Si at the time of Kono! Hh flow rate is 30 SCCM
(mass flow rate at 0'C1at-), the flow rate of diborane BJi is 425 CCM.

(4) In this state, the first electrode 2 is connected to the RF power source 31.
Give RF power 100- to 9. As a result, the raw material gas consisting of disilane Si, Hk and diborane B, H& is decomposed within the deposition space 34 and becomes a plasma state. Then, an a-St:H film heavily doped with boron (B) is formed on the substrate 102 to a thickness of 0.56 .mu.-. This a-5t;H film is the blocking layer 103.

(5) After forming the blocking layer 103 on the substrate 102, the pressure inside the vacuum container 26 is maintained at a reduced pressure of about 0.1 torr.

At the same time as this pressure reduction operation, the flow rate of diborane BtH,
The flow rate regulator 5e is adjusted to achieve SCCM.

RF power is 100-.

(6) And a-Si:I with a low boron B doping amount
A T film is formed on the pronging layer 103 until it reaches a thickness of 3 to 4 μm.

This a-5t:H film is the photosensitive layer 104.

(7) After forming the photosensitive layer 104, the thin film forming apparatus changes the film forming conditions as follows, so that a layer of 0 thickness is formed on the photosensitive layer 104.
．． A surface protective layer 105 of an 18μ pot is formed.

Pressure: Q, l torr Substrate temperature: 250°C RP power: 100W SIJ & flow rate: 2SCCM CJs flow rate: 20 SCCM H2 flow rate: 100 SCCM μ-wave power: 380W That is, after forming the photosensitive layer 104, the pressure was reduced to 0.1 to
rr, while maintaining the substrate temperature at 250°C, by closing the flow rate regulator 5e, the flow rate of diborane (ntoJ) is increased to 2 SCCM, 4≧
The flow rate of propane C, H, from 2 is set at 205 CCH, and is introduced into the vacuum vessel 26 through the inlet 114. At the same time, the flow rate regulator 5f
Hydrogen gas H1 from the gas cylinder 7 is introduced into the hydrogen gas introduction section 25
, is introduced into the vacuum vessel 26 through the inlet portion 115. H
The flow rate of No. 2 is set to 1005 CCH.

(8) In this state, R from RF power supply 31 to 100-
F power is applied to the first electrode 29, and at the same time or immediately after this, the microwave oscillator 21 receives a μ of 38
Wave power is supplied.

The first and second
When an RF voltage is applied between electrodes 29,27 of R
A plasma region is generated between the first and second electrodes 29, 27 due to the collision of electrons generated by the F discharge and molecules of the source gas.

Further, the hydrogen gas in the quartz tube 23 introduced from the hydrogen gas introduction part 25 of the quartz tube 23 travels through the waveguide 22 and becomes a plasma state due to the action of microwaves applied in the plasma generation furnace 24, and hydrogen Radical (・■) becomes 10. The hydrogen radicals (.■) 10 are then led to the plasma region 34 within the vacuum vessel 26.

As a result, abundant hydrogen radicals (.■) 10 are supplied between the first electrode 29 and the second electrode 27, and
a-Sit-x Cx with high carbon content (x=0.8);)
l film is formed.

Therefore, this thin film forming apparatus can sufficiently bond silicon (Si), which has a lower bonding energy than carbon (C). Therefore, the formed a-5iC:H film has fewer St ring atom dumping bonds (DB) and is denser.

The a-3i bad sensitivity photo created as described above has a charging potential of 500V, a residual potential of 5V, and a half-decreased exposure amount of 1.0μJ/
- It had good electrical characteristics.

Furthermore, this a-3i:H photoreceptor is heated at 35°C and has a temperature of 85χR.
No image blurring occurred even in an H atmosphere, and the film had excellent moisture resistance.

Using the thin film forming apparatus shown in FIGS. 3 and 4, the blocking layer 103 is formed on the substrate 100 by the method described above. After creating the photosensitive layer 104, the film forming conditions were set as shown in Table 1 to create the surface protective layer 105.

Table 1 Common conditions Pressure: 0.2 torrRF power: 100W μ-wave power: 380W Substrate temperature: 250°C r=CJa/(CJs+5iJa) Table 2 shows the electrical characteristics of the a-Si photoreceptor formed under the above-mentioned film formation conditions. Show characteristics.

Table 2 The a-Si:H photoreceptor of sample No. C2-3 was heated at 35°C.
No image blurring occurred in the 80χRH atmosphere.

In addition, image blur occurred in sample No. C2-2. Furthermore, image blurring sometimes occurred in sample No. C2-1.

For comparison, using the conventional RF-CVD apparatus shown in FIG. 10, a-
A Si photoreceptor was created.

In this a-5L photosensitive material, a charging capacity of only 20 (V/μ■) was obtained.

Table 3 shows the thin film forming apparatus (HR) shown in FIGS. 3 and 4.
-CVD) and the conventional RP-CVD apparatus shown in FIG.
This figure compares the physical properties of a-SiC:H films formed directly on 0.

Table 3 Film forming conditions Pressure: 0.2 torr Substrate temperature: 250°C RF power: 100W SizH, flow rate: 2.2 SCCM C3H1l flow rate: 20 SCCMH! Flow rate: 100 SCCM μ-wave power: 380W (HR-CVD only
r: 0.9 The carbon content of both is E. It is thought that they are almost the same based on the value of pl. ) The film prepared using an IR-CVD device has a higher B value and a larger contact angle. This seems to be because the denseness of the film was improved by introducing hydrogen radicals into the deposition space.

Table 4 shows the case where propane C1HI was introduced into the vacuum vessel 26 together with disilane St and H6 through the vibrator 118 using the thin film forming apparatus shown in FIGS. 3 and 4 (sample no.

Cl-3) and the case where hydrogen was introduced together with hydrogen 3 from the end 23b of the quartz tube 23 (sample No., Cl-4) are compared. FIG. 5 is an explanatory diagram of the method of introducing propane CJi, and FIG. 5(a) shows the pipe 118 and the inlet section 11.
5(b) is a diagram showing a state in which disilane SiJ and propane CJI are introduced through the end 23b of the quartz tube 23.
FIG. 3 is a diagram showing a state in which propane C3H1 is introduced from a propane gas introduction part 25b provided in the .

Table 4 A comparison between the two shows that introduction method a was better. The reason for this is that the introduction method is Cds using microwaves.
decomposes into carbon atoms (C) in the quartz tube 23, resulting in ·CH,, ·C! H, radicals, etc. increase. At this time, a-
The hydrogen of 5i-H on the outermost surface of the 5iC:H film is extracted, and S
It is thought that the denseness of the film is lost due to an increase in dangling bonds of t atoms.

Film-forming conditions Pressure: 0.2 torr Substrate temperature: 250°C RP power: 100W Si, H, flow rate: 3 SCCM CJa flow rate: 7 SCCM H2 flow rate: 100 SCCM μ-wave power 2380°C: 0.7 Figure 6 is a thin film forming apparatus for producing a photoreceptor drum, and the thin film forming apparatus (HR-
CVD) The second electrode 27 has a cylindrical shape that is rotationally driven by a drive motor (not shown) so that the cylindrical base tooz can be set, and the first electrode 29
an arc-shaped electrode so as to surround almost the entire circumference of the electrode 27;
In addition, the hydrogen radicals introduced from the inlet portion 115
A hydrogen radical introducing section 35 is provided to uniformly introduce hydrogen radicals in the longitudinal direction of the hydrogen radical. This hydrogen radical introduction section 35 is connected to the first electrode 29 shown in FIG.
It has a similar shape.

With the thin film forming apparatus configured in this way, an a-SiC:I (film was formed) by setting the following film forming conditions.
The -SiC:H film is formed on the cylindrical base 100Z on which the pronging layer 103 and the photosensitive layer 104 are formed under the same film forming conditions as in the method described above.

Film forming conditions Pressure: 0.2 torr Substrate temperature: 250°C RF power: ioow SizHi flow rate: 2.2 SCCMC3HI flow rate: 10 SCCMH! Flow rate: 200S
CCM μ-wave power: 540 W r: 0.8 Table 5 shows the characteristics of the a-Si photoreceptor thus formed.

Table 5 This A-3T photosensitive drum has high initial water repellency, and the contact angle varies slightly depending on the location, but is 80" to 85".
It was within the range of °. This a-St photoreceptor drum is
In an environmental test in an atmosphere of 35℃80χRH, 2
Good prints without "image deletion" were obtained even after continuous corona irradiation for hours or after one-night exposure.

Thin film forming apparatus (HR-CVD) shown in Figures 3 and 4
) a-SiC:H film (hereinafter referred to as a-5iC:H
) and the conventional RF-CVD shown in FIG.
The a-SiC:H film (hereinafter referred to as a-SiC:
) In order to investigate the difference between 1 and 2, an a-5 ICJ film was formed directly on an A1 substrate under the same film forming conditions as described below.

Film forming conditions Pressure: 2. Otorr substrate temperature: 250°C RP power: 100°C & flow rate: 2. OSCCM C, H, flow rate: 10 SCCM ■2 flow rate: 200 SCCM μ-wave power: 500 W Table 6 shows the characteristics of the a-SiC:H film produced in this way.

Table 6 To investigate the difference between both a-5iC:)I films,
.

60% corona using a corona charger in an 80χRH atmosphere
The surface condition was analyzed by Fourier transform infrared spectroscopy (F
It was measured by high sensitivity reflection method (IR-RAS) using a T-IR) device (JIR-3505: JEOL Ltd.).

FIG. 7 is a graph showing the measurement results of IR-RAS,
a-SiC:H■ is 5i-0- compared to a-SiC:H■
Si-related adsorption such as 5i+ 5i-OH+If-OH,
The amount of oxidation is approximately 173.

v#a-S i C: Hli! In order to investigate the difference in the structure of I, laser Raman spectroscopy was performed.

FIG. 8 is an explanatory diagram of a laser Raman spectroscopy procedure for measuring the structural density of a-SiC:HwA.

The laser oscillated by the Ar'' 488nm oscillator 21 for excitation laser oscillation passes through the interference filter 22 and passes through the mirror 23.
．． .

Slit 24. The light passes through the mirror 23□ and enters the sample cell 25 in which Ar gas is flowing at an angle of 45°. Sample 50 is
This is an a-SiC:H film deposited on a substrate 100.

The Raman scattered light emitted from the sample 50 is transmitted through the slit 26. .

Condensing lens 27. Slit 26! The signal is sent to the spectrometer 28 and converted into a spectrum by the data processing section 29.

30 is a multi-fort plier.

Note that a JEOL laser Raman spectrometer was used for the measurement of a-5iC:HM.

In the Raman spectrum results obtained in this measurement, a
-SiC:H film has To (approximately 488 as-
Two peaks at A (approximately 150 am-') are observed. The TO/TA peak ratio represents disturbance of the symmetry of the St bond and disturbance of the structure, and the larger this value is, the higher the denseness of the structure is.

FIG. 1 shows the results of laser Raman spectroscopic measurements of highly dense a-3iC:II■ in comparison with conventional a-3iC+H■. As a result, the TO of a-5iC:II■
/TA is 1.8, whereas T of a-3iC:H■
O/TA was 2.4, indicating that the structure was dense.

This effect is thought to be due to the following reasons.

If carbon is originally contained in a-3i:H, some degree of disorder will occur in the Si network. As a result, a-Si
The reactivity of St on the surface of the C:H film increases and is oxidized by ozone (0,) generated by corona irradiation, resulting in 5t-O~S.
i or 5t-OH. However, the high density a-5i
It is believed that by forming a C:H film, the reactivity of the surface St can be suppressed, surface adsorption and oxidation due to corona irradiation at high temperature and high humidity can be eliminated, and image blurring can be prevented.

a-3IC: In order to investigate the relationship between the carbon content (x) of the H film and the To/TA ratio, disilane 5txHi, propane C3
H□Hydrogen11. By changing the flow rate ratio of
) a-SiC:H film was created.

Table 7 shows the relationship between flow rate ratio, carbon content (X), and contact angle.

Table 7 Unit 2 SCCM FIG. 2 is a graph showing the relationship between carbon content (x) and TO/TA ratio.

As can be seen from Figure 2, a-5IC:)l■ is To/
The TA ratio is 2.0 or more, and compared to a-SiC nil ■,
The membrane is made denser.

a-3IC: a-S with H■ formed as a surface protective layer
As a result of image formation using an i photoreceptor in an 80XRH atmosphere at 35° C., a-Sirf! has a surface protective layer with a carbon content of 0.3. The four-light object caused image blur, but other a-
No image blurring occurred with the 3i bad exposure light.

In addition, the carbon content of the a-Si, -x Cx:H film is set to X≧0
, 8, a carbon lynch structure is formed, the insulation properties are lowered, and the charging ability is lowered.

Each of the above-mentioned measurement values was measured using the following measurement method.

(1) Contact Angle After dropping 20p of pure water onto a horizontally placed sample using a micromilling machine (Model 4780, manufactured by Elapendre), the water droplet was photographed from the side using a camera (RZ67, manufactured by Mamya). From the width d and height h of the water droplet at this time, 2(h/d
)・tanθ.

(21El. 25. Measurement of B value using an ultraviolet-visible spectrophotometer (UV-3400, Hitachi model).
The absorption at 00n11 was measured. The optical band gap (E I.) and B value were determined using Equation (1). The B value indicates the slope of the tail portion of the band, and was used as a measure of the denseness of the film.

α(ω) = B (hω-E,.pt)”/hω...
fl) Here, α(ω): Absorption coefficient ω; Frequency h: Blank constant (3) Charging potential was determined using a paper analyzer (Model 5P-428, Kawaguchi Denki type).

(4) Residual potential The sample charged using the device described in (3) is
A light beam with a light intensity of 0.476 x 10"d/peng" was applied, and the potential at which the charge completely disappeared was defined as the residual potential V.

(5) Dark decay time After the sample was charged using the apparatus described in (3) above, the time required for the charged potential to decrease to 1/2 without exposing it to light was defined as the dark decay time tl/□.

〔Effect of the invention〕

As described above, the a-SiC:H film according to the present invention is
By using this a-SIC:)I film as a surface protective layer, a high performance a-3i photoreceptor with high charging ability and excellent moisture resistance is obtained, with little surface deterioration due to corona irradiation in high temperature environments. be able to.

[Brief explanation of drawings]

Fig. 1 is a graph showing the results of laser Raman spectroscopy measurement, Fig. 2 is a graph showing the relationship between carbon content and TO/TA ratio, Fig. 3 is a structural diagram of the thin film forming apparatus, and Fig. 4 is: A perspective view of the thin film forming device, FIG. 5 is an explanatory diagram of the propane gas introduction method, FIG. 6 is a diagram showing the thin film forming device for forming the photoreceptor drum, and FIG. 7 is the measurement results of IR-RAS. Graph showing, No. 8
The figure is an explanatory diagram of a laser Raman spectrometer.
Figure 10 is a diagram showing the configuration of a conventional RP-CVD apparatus.
In the figure, 101 is an a-Si photoreceptor, and 105 is a surface protective layer.

Claims (1)

[Claims] A compound represented by the general formula a-Si_1_-_xC_x:H has a composition of 0.4≦x≦0.8, and Ar
The ratio of the peak (TO) height that appears near 480 cm^-^1 and the peak (TA) height that appears near 150 cm^-^1 observed in laser Raman spectrometry using a ^+488 nm excitation laser (TO/TA) ) is 2.0 or more.