JPH0294607A - Oxide garnet single crystal and manufacture thereof - Google Patents
Oxide garnet single crystal and manufacture thereofInfo
- Publication number
- JPH0294607A JPH0294607A JP63246832A JP24683288A JPH0294607A JP H0294607 A JPH0294607 A JP H0294607A JP 63246832 A JP63246832 A JP 63246832A JP 24683288 A JP24683288 A JP 24683288A JP H0294607 A JPH0294607 A JP H0294607A
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- garnet single
- film
- oxide garnet
- oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000002223 garnet Substances 0.000 title claims abstract description 43
- 239000013078 crystal Substances 0.000 title claims abstract description 42
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 238000000034 method Methods 0.000 claims abstract description 20
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 239000007791 liquid phase Substances 0.000 claims abstract description 9
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000012071 phase Substances 0.000 claims abstract description 7
- 230000007704 transition Effects 0.000 claims abstract description 7
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims abstract description 4
- 229910052733 gallium Inorganic materials 0.000 claims description 7
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 5
- 229910052688 Gadolinium Inorganic materials 0.000 claims description 4
- 229910052779 Neodymium Inorganic materials 0.000 claims description 3
- 238000005498 polishing Methods 0.000 claims description 3
- 229910052727 yttrium Inorganic materials 0.000 claims description 3
- 229910052772 Samarium Inorganic materials 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- 229910052797 bismuth Inorganic materials 0.000 claims description 2
- 229910052791 calcium Inorganic materials 0.000 claims description 2
- 229910052738 indium Inorganic materials 0.000 claims description 2
- 229910052749 magnesium Inorganic materials 0.000 claims description 2
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 claims description 2
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 claims description 2
- 229910052706 scandium Inorganic materials 0.000 claims description 2
- 229910052726 zirconium Inorganic materials 0.000 claims description 2
- ZPDRQAVGXHVGTB-UHFFFAOYSA-N gallium;gadolinium(3+);oxygen(2-) Chemical group [O-2].[O-2].[O-2].[Ga+3].[Gd+3] ZPDRQAVGXHVGTB-UHFFFAOYSA-N 0.000 claims 1
- 229910052746 lanthanum Inorganic materials 0.000 claims 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 abstract description 6
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 abstract description 5
- 239000002253 acid Substances 0.000 abstract description 4
- 230000007547 defect Effects 0.000 abstract description 4
- 229910052500 inorganic mineral Inorganic materials 0.000 abstract description 4
- 239000011707 mineral Substances 0.000 abstract description 4
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 abstract description 3
- 229910017604 nitric acid Inorganic materials 0.000 abstract description 3
- 229910052761 rare earth metal Inorganic materials 0.000 abstract description 2
- 150000002910 rare earth metals Chemical class 0.000 abstract description 2
- 239000007788 liquid Substances 0.000 abstract 1
- 239000001117 sulphuric acid Substances 0.000 abstract 1
- 235000011149 sulphuric acid Nutrition 0.000 abstract 1
- 239000000463 material Substances 0.000 description 5
- 229910052742 iron Inorganic materials 0.000 description 4
- 239000000155 melt Substances 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 3
- 238000007517 polishing process Methods 0.000 description 3
- 150000007513 acids Chemical class 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 238000007716 flux method Methods 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 229910005224 Ga2O Inorganic materials 0.000 description 1
- 229910052765 Lutetium Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Soft Magnetic Materials (AREA)
- Thin Magnetic Films (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は酸化物ガーネット単結晶およびその製造方法、
特には周波数１００ＭＩ（ｚから数１０Ｇ−のマイクロ
波帯で使用されるマイクロ波素子、例えばアイソレータ
ー、サーキュレータ−用の新規な磁性膜や磁気光学素子
用磁性膜として有用とされる厚膜状の酸化物ガーネット
単結晶およびその製進方法に関するものである。Detailed Description of the Invention (Industrial Application Field) The present invention relates to an oxide garnet single crystal and a method for producing the same,
In particular, thick oxide films are useful as new magnetic films for microwave devices such as isolators and circulators, and magnetic films for magneto-optical devices, which are used in the microwave band from 100 MI (z to several tens of G). This invention relates to a garnet single crystal and a method for producing the same.
（従来の技術とその問題点）
従来、マイクロ波素子用の磁性材料としてはフラックス
法で育成されたＹＩＧ結晶が使われていたが、フラック
ス法で作られたマイクロ波素子は製造コストが高いとい
う不利があるためにこれについては半導体工業で開発さ
れたウェーハプロセス技術を応用した液相エピタキシャ
ル法で育成したＹＩＧ結晶や（Ｙ Ｂ ｉ Ｆ ｅ
）ｅｏｘｚ結品を使用することが提案されている。(Conventional technology and its problems) Conventionally, YIG crystals grown by the flux method have been used as magnetic materials for microwave devices, but microwave devices made by the flux method are said to be expensive to manufacture. Due to this disadvantage, YIG crystals grown by liquid phase epitaxial method applying wafer process technology developed in the semiconductor industry and (YB i Fe
) has been proposed to use eoxz products.
しかし、この方法で得られる酸化物ガーネット単結晶は
膜厚が１００μｍ以上のものも得られるけれども、厚み
にバラ付きがあるし、膜表面に無数の欠陥があり、さら
には磁気共鳴半値巾△Ｈが一定でなく、しかも高い値を
示すという欠点があるために実用に供することができな
いという不利がある。However, although the oxide garnet single crystal obtained by this method can have a film thickness of 100 μm or more, the thickness varies, there are countless defects on the film surface, and the magnetic resonance half-width △H It has the disadvantage that it is not constant and exhibits a high value, so it cannot be put to practical use.
（発明の構成）
本発明はこのような不利を解決した高品質のマイクロ波
素子用材料や磁気光学素子用材料とじて有用とされる厚
膜状の酸化物ガーネット単結晶およびその製造方法に関
するもので、これは液相エピタキシャル法で基板上に育
成された酸化物ガーネット単結晶膜の表面の遷移相を除
去することにより、上記の欠点が除去されることを見出
したので、これは該膜をエツチングする工程、または研
磨する工程あるいはこれを組合せる工程により表面の遷
移相を除去することを特徴とするものである。(Structure of the Invention) The present invention relates to a thick film-like oxide garnet single crystal that is useful as a high-quality material for microwave elements and a material for magneto-optical elements, and a method for producing the same, which solves the above-mentioned disadvantages. We discovered that the above drawbacks can be removed by removing the transition phase on the surface of a garnet oxide single crystal film grown on a substrate using the liquid phase epitaxial method. It is characterized in that the transition phase on the surface is removed by an etching process, a polishing process, or a combination thereof.
すなわち、本発明者らは前記したような不利を伴わない
酸化物ガーネット単結晶の製造方法について種々検討し
た結果、酸化物ガーネット単結晶の育成を希土類金属・
ガリウム・ガーネットからなる基板を酸化物ガーネット
単結晶の融液中に浸漬し、この基板上に公知の液相エピ
タキシャル法で酸化物ガーネット単結晶を膜状に育成さ
せたのち、得られた膜をリン酸、硫酸、硝酸、フッ酸な
どの鉱酸でエツチングまたは研磨し、もしくはこれらを
組合せると、この膜は表面の遷移相が除去され厚みのバ
ラツキも少なく、膜表面の欠陥もなくなり、さらには磁
気共鳴半値巾ΔＨも２．００ｅ以下に小さくなることを
見出すと共に、こシに得られた酸化物ガーネット単結晶
はマイクロ波素子用材料や磁気光学素子用材料として有
用とされることを確認して本発明を完成させた。In other words, the present inventors have studied various methods for producing oxide garnet single crystals that do not involve the disadvantages mentioned above, and have found that the growth of oxide garnet single crystals can be carried out using rare earth metals.
A substrate made of gallium garnet is immersed in a melt of oxide garnet single crystal, and an oxide garnet single crystal is grown in the form of a film on this substrate by a known liquid phase epitaxial method. Etching or polishing with mineral acids such as phosphoric acid, sulfuric acid, nitric acid, or hydrofluoric acid, or a combination of these, removes the transition phase on the surface of the film, reduces thickness variation, and eliminates defects on the film surface. found that the magnetic resonance half-value width ΔH was also small to less than 2.00e, and confirmed that the oxide garnet single crystal obtained in this way is useful as a material for microwave devices and magneto-optical devices. The present invention was completed.
以下にこれをさらに詳述する。This will be explained in further detail below.
本発明の酸化物ガーネット単結晶を育成するために使用
するガーネット基板単結晶はガドリニウム・ガリウム・
ガーネット（以下ＧＧＧと略記する）、サマリウム・ガ
リウム・ガーネット（以下ＳＧＧと略記する）、ネオジ
ム・ガリウム・ガーネット（以下ＮＧＯと略記する）、
上記したＧＧＧにＣａ、Ｍｇ、ＺｒまたはＹを置換した
ＧＧＧ系のＳＯＧ、ＮＯＧ、ＹＯＧ ［いずれも信越化
学工業■商品名］とすればよく、これらはＧｄ、Ｏ，。The garnet substrate single crystal used to grow the oxide garnet single crystal of the present invention includes gadolinium, gallium,
Garnet (hereinafter abbreviated as GGG), samarium gallium garnet (hereinafter abbreviated as SGG), neodymium gallium garnet (hereinafter abbreviated as NGO),
GGG-based SOG, NOG, and YOG [all trade names of Shin-Etsu Chemical Co., Ltd.] in which Ca, Mg, Zr, or Y is substituted for the above-mentioned GGG may be used, and these may be Gd, O, or GGG.
Ｓｍ、０．、Ｎｄ、Ｏ，または必要に応じＣａＯ，Ｍｇ
ｏ、ＺｒＯ，Ｙ、○、などの置換材をそれぞれＧａ２Ｏ
３の所定量と共にルツボに仕込み、高周波誘導でそれぞ
れの融点以上に加熱して溶融したのち。Sm, 0. , Nd, O, or as necessary CaO, Mg
Replacement materials such as o, ZrO, Y, ○, etc. with Ga2O
After placing them in a crucible together with the prescribed amounts of 3 and heating them above their respective melting points using high-frequency induction, they are melted.
この融液からチョクラルスキー法で単結晶を引上げるこ
とによって得ることができる。It can be obtained by pulling a single crystal from this melt using the Czochralski method.
また、この基板単結晶上に液相エピタキシャル法でエピ
タキシャル成長させる酸化物ガーネット単結晶膜は組成
式がＹ、 Ｆ ｅ、０１□または（ＹＭ）ａＦｅ、−ａ
０１２または（Ｙ Ｍ）ａ（Ｆ ｅ Ｎ）、−ＢＯｌ、
で示され、このＭがＬａ、Ｂｉ、Ｇｄ、Ｌｕで、ＮがＧ
ａ、Ａｌ、Ｓｃ、Ｉｎの少なくとも１種の元素から選択
され、ａが３．・１≧ａ≧３．０であるものとされる。Further, the oxide garnet single crystal film epitaxially grown on this substrate single crystal by the liquid phase epitaxial method has a composition formula of Y, Fe, 01□ or (YM)aFe, -a.
012 or (YM)a(FeN), -BOI,
, where M is La, Bi, Gd, Lu, and N is G.
selected from at least one element of a, Al, Sc, and In, and a is 3. - It is assumed that 1≧a≧3.0.
この式Ｙ、Ｆｅ８Ｏ１２、（Ｙ Ｍ）ａＦ ｆ３ａ−ａ
ｏｘ＊または（ＹＭ）Ｂ（ＦｅＮ）、−ＢＯ□、で示さ
れる単結晶は白金ルツボ中に必要に応じＹ２Ｏ３、Ｆｅ
、Ｏ，、Ｍ２Ｏ，またはＮ、Ｏ，をフラックスとしての
ＰｂＯ１８２０ｇ ト共に仕込み、９００〜１，３００
℃に加熱してこれを融解させたのち、この融液からＬＰ
Ｅ法で単結晶を引き上げることによって得ることができ
る。This formula Y, Fe8O12, (Y M)aF f3a-a
The single crystal represented by ox* or (YM)B(FeN), -BO□ is placed in a platinum crucible with Y2O3, Fe
, O, , M2O, or N, O, and 1820 g of PbO as a flux were charged, and the amount of 900 to 1,300
After melting this by heating to ℃, LP is extracted from this melt.
It can be obtained by pulling a single crystal using the E method.
本発明の方法はこのようにして得た酸化物ガーネット単
結晶厚膜をついでエツチングまたは研磨し、あるいはこ
れらを組合せるのであるが、このエツチングはリン酸、
硫酸、硝酸、フッ酸などの鉱酸を用いて行なえばよく、
これは例えばこのような鉱酸液を１００〜２５０℃に加
熱し、この液中に酸化物ガーネット単結晶を浸漬すれば
よい。In the method of the present invention, the oxide garnet single crystal thick film thus obtained is then etched or polished, or a combination of these is performed.
This can be done using mineral acids such as sulfuric acid, nitric acid, or hydrofluoric acid.
This can be done, for example, by heating such a mineral acid solution to 100 to 250°C and immersing the oxide garnet single crystal in this solution.
また、研磨はガーネット単結晶を研磨材を用いて研磨す
るのであるが、この研磨剤としてはこの種の研磨に一般
に使用されているＡ１□ｏ３、ＳｉＣ、ダイヤモンド粉
などの硬質微粉末を使用すればよい。なお、このあとの
洗浄は公知の方法で行なえばよい。In addition, the garnet single crystal is polished using an abrasive, and the abrasive is hard fine powder such as A1□O3, SiC, or diamond powder, which is commonly used for this type of polishing. Bye. Note that subsequent cleaning may be performed by a known method.
上記したような方法で得られる酸化物ガーネット単結晶
厚膜は育成されたエピタキシャル膜にピットを生じるこ
とがなく、厚みも均一で、しかも磁気共鳴半値巾ΔＩ（
も２．ＯＯｅ以下と小さいのでマイクロ波素子用材料や
磁気光学素子用材料としてすぐれた物性をもつものとな
り、このものは例えば周波数１００Ｍ）Ｉｚから数１０
０Ｉ（ｚのマイクロ波帯で使用されるマイクロ波素子と
して有用とされるほか、光アイソレータ−、サーキュレ
ータ−用の磁気光学素子用磁性膜としても有用とされる
。The oxide garnet single crystal thick film obtained by the method described above does not produce pits in the grown epitaxial film, has a uniform thickness, and has a magnetic resonance half-value width ΔI (
Also 2. Because it is small (less than OOe), it has excellent physical properties as a material for microwave devices or magneto-optical devices.
In addition to being useful as a microwave element used in the microwave band of 0I(z), it is also useful as a magnetic film for magneto-optical elements for optical isolators and circulators.
つぎに本発明の実施例をあげる。Next, examples of the present invention will be given.
実施例１
基板としてＧＧＧ単結晶ウェーハを用い、エピタキシャ
ル膜を形成させる成分として所定量のＹ２Ｏ，、Ｆｅ、
０３、Ｂｉ、Ｏ，をフラックス成分としてのＰｂＯ，Ｂ
、Ｏ，と共に白金ルツボに仕込み、１．１００℃に加熱
してこれを溶融させ、この融液からＬＰＥ法でＧＧＧ単
結晶ウェーハの（１１１）方向に式Ｙ、、Ｂ ｉ、ＬＬ
Ｆ ｅ、Ｏ，、で示されるエピタキシャル膜を厚さ１１
０μｍに成長させて酸化物ガーネット単結晶を作り、つ
いでこれを１８０℃のリン酸液中でエツチングしたのち
、砥粒ＦＯ＃１２００を用いて７０分×６回の研磨を行
い、洗浄したところ、膜厚が１１０μｍで厚みのバラツ
キが２．６μｓであり、ΔＨが１．６０ｅである酸化物
ガーネットウェーハが得られ、このものはその表面を顕
微鏡で観察したところ第１図に示したようにこれにはク
ラック、ヒビという欠陥はみられなかった。Example 1 A GGG single crystal wafer was used as a substrate, and a predetermined amount of Y2O, Fe,
03, PbO, B with Bi, O, as flux components
, O, in a platinum crucible and heated to 1.100°C to melt it, and from this melt, use the LPE method to form the formula Y, , B i, LL in the (111) direction of the GGG single crystal wafer.
The epitaxial film denoted by Fe,O,, has a thickness of 11
An oxide garnet single crystal was grown to 0 μm, then etched in a phosphoric acid solution at 180°C, and then polished 6 times for 70 minutes using abrasive FO#1200 and washed. An oxide garnet wafer with a film thickness of 110 μm, a thickness variation of 2.6 μs, and a ΔH of 1.60e was obtained, and the surface of this wafer was observed under a microscope, as shown in Figure 1. No defects such as cracks or cracks were observed.
しかし、比較のために上記で得たエツチング、研磨工程
前のウェーハ表面を顕微鏡でしらべたところ、このもの
は第２図に示したように無数のピットが認められ、この
ものはΔＨも２．６０ｅと高い値を示した。However, for comparison, when the surface of the wafer obtained above before the etching and polishing process was examined under a microscope, numerous pits were observed as shown in FIG. 2, and the ΔH was 2. It showed a high value of 60e.
実施例２
所定量のＹ２Ｏ，、Ｆ ｅ、Ｏ，を用いて実施例１と同
一の方法でＧＧＧウェーハの（１１１）方向にＹ、Ｆｅ
、○、２で示されるエピタキシャル膜を得たが、これは
膜厚のバラツキ、ΔＨ値共、実施例１と同様、良好な結
果を示した。Example 2 Y, Fe was deposited in the (111) direction of the GGG wafer using the same method as in Example 1 using a predetermined amount of Y2O,, Fe, O,
Epitaxial films indicated by .
実施例３ 所定量のＹ２Ｏ３、Ｂｉ２Ｏ，、Ｆｅ、Ｏ，、Ｇａ。Example 3 Predetermined amounts of Y2O3, Bi2O,, Fe, O,, Ga.
０、を用いて実施例１と同一の方法でＧＧＧウェーハの
（１１１）方向にＹ２ＩＩＢｉａ１Ｆｅ４□Ｇａａ！０
１２で示されるエピタキシャル膜を得たが、これは膜厚
のバラツキ、ΔＨ値共、実施例１と同様、良好な結果を
示した。0, Y2IIBia1Fe4□Gaa! in the (111) direction of the GGG wafer in the same manner as in Example 1 using 0
An epitaxial film designated by No. 12 was obtained, which showed good results in terms of film thickness variation and ΔH value, similar to Example 1.
第１図は実施例で得られた酸化物ガーネット単結晶厚膜
の［微鏡写真を示したものであり、第２図は比較例とし
てのエツチング、研磨工程前の酸化物ガーネット単結晶
厚膜の顕微鏡写真を示したものである。Figure 1 shows a microscopic photograph of the oxide garnet single crystal thick film obtained in the example, and Figure 2 shows the oxide garnet single crystal thick film before the etching and polishing process as a comparative example. This is a microscopic photograph of .
Claims (5)
物ガーネット単結晶において、表面の遷移相が除去され
ていることを特徴とする酸化物ガーネット単結晶。1. An oxide garnet single crystal grown on a substrate by a liquid phase epitaxial method, characterized in that a transition phase on the surface has been removed.
ト単結晶厚膜を育成する工程、該厚膜をエッチングする
工程または研磨する工程あるいはこれらを組合せる工程
とよりなることを特徴とする酸化物ガーネット単結晶の
製造方法。2. An oxide garnet single crystal comprising the steps of growing a thick oxide garnet single crystal film on a substrate by liquid phase epitaxial method, etching or polishing the thick film, or a combination thereof. manufacturing method.
る請求項１に記載の酸化物ガーネット単結晶膜の製造方
法。3. The method for producing an oxide garnet single crystal film according to claim 1, wherein the oxide garnet single crystal film has a thickness of 1 μm or more.
記載の酸化物ガーネット単結晶膜の製造方法。4. 3. The method for producing an oxide garnet single crystal film according to claim 2, wherein the oxide garnet single crystal film is etched with phosphoric acid and then polished.
ＧＧ）、一部をＣａ，Ｚｒ，Ｍｇ又はＹの１種又は２種
以上で置換したＧＧＧ系、サマリウム・ガリウム・ガー
ネット（ＳＧＧ）またはネオジム・ガリウム・ガーネッ
ト（ＮＧＧ）のいずれかであり、酸化物ガーネット単結
晶膜が式Ｙ＿３Ｆｅ＿５Ｏ＿１＿２、（ＹＭ）＿ａＦｅ
＿８Ｏ＿１＿２または（ＹＭ）＿ａ（ＦｅＮ）＿ａ＿−
＿ａＯ＿１＿２（こゝにＭはＬａ、Ｇｄ、Ｂｉ、Ｌｕか
ら、ＮはＧａ、Ａｌ、Ｓｃ、Ｉｎから選択される少なく
とも１つの元素、ａは３．１≧ａ≧３．０）で示される
ものである請求項１に記載の酸化物ガーネット単結晶膜
の製造方法。5. The substrate is gadolinium gallium garnet (G
GG), GGG series partially substituted with one or more of Ca, Zr, Mg or Y, samarium gallium garnet (SGG) or neodymium gallium garnet (NGG), and is oxidized. The monocrystalline garnet film has the formula Y_3Fe_5O_1_2, (YM)_aFe
_8O_1_2 or (YM)_a(FeN)_a_-
_aO_1_2 (where M is at least one element selected from La, Gd, Bi, and Lu, N is at least one element selected from Ga, Al, Sc, and In, and a is 3.1≧a≧3.0) The method for producing an oxide garnet single crystal film according to claim 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63246832A JP2800973B2 (en) | 1988-09-30 | 1988-09-30 | Method for producing oxide garnet single crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63246832A JP2800973B2 (en) | 1988-09-30 | 1988-09-30 | Method for producing oxide garnet single crystal |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0294607A true JPH0294607A (en) | 1990-04-05 |
| JP2800973B2 JP2800973B2 (en) | 1998-09-21 |
Family
ID=17154356
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63246832A Expired - Fee Related JP2800973B2 (en) | 1988-09-30 | 1988-09-30 | Method for producing oxide garnet single crystal |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2800973B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5434101A (en) * | 1992-03-02 | 1995-07-18 | Tdk Corporation | Process for producing thin film by epitaxial growth |
| JP2017044770A (en) * | 2015-08-25 | 2017-03-02 | 住友金属鉱山株式会社 | Method for manufacturing Faraday rotator |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5022294A (en) * | 1973-07-02 | 1975-03-10 | ||
| JPS6016900A (en) * | 1983-07-04 | 1985-01-28 | Nec Corp | Preparation of magnetic thin film |
-
1988
- 1988-09-30 JP JP63246832A patent/JP2800973B2/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5022294A (en) * | 1973-07-02 | 1975-03-10 | ||
| JPS6016900A (en) * | 1983-07-04 | 1985-01-28 | Nec Corp | Preparation of magnetic thin film |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5434101A (en) * | 1992-03-02 | 1995-07-18 | Tdk Corporation | Process for producing thin film by epitaxial growth |
| US5662740A (en) * | 1992-03-02 | 1997-09-02 | Tdk Corporation | Process for producing thin film by epitaxial growth |
| JP2017044770A (en) * | 2015-08-25 | 2017-03-02 | 住友金属鉱山株式会社 | Method for manufacturing Faraday rotator |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2800973B2 (en) | 1998-09-21 |
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