JPH0294594A - Manufacture of thin film multilayer substrate - Google Patents

Abstract

PURPOSE:To improve the yield of an object with small quantity production and high cost by optically detecting to inspect a wiring pattern on the insulating films of layers, correcting a defective part, and then forming the insulating film and the wiring pattern of the next layer. CONSTITUTION:An aluminum wiring pattern 102a and a PIQ 103a of an insulating film are formed on a ceramic board 100, and a through hole for connecting to the wiring pattern of a lower layer is formed. Then, aluminum is formed in a film, coated with photoresist 104a thereon, exposed, developed, etched, and the photoresist 104a is peeled. Then, the pattern is inspected, and a defective part is corrected on the basis of the result. An insulating film PIQ 103b is formed, and a wiring pattern is formed. Thus, since the inspection is conducted to be corrected after the wiring patterns of the layers are completed, defects are not accumulated. Accordingly, its yield can be raised.

Description

[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a method for manufacturing a thin film multilayer substrate consisting of an insulating group and a wiring pattern, and in particular to a method for manufacturing a thin film multilayer substrate formed on a ceramic substrate used for example. The present invention relates to a method for manufacturing a multilayer pattern.

[Conventional technology]

The conventional manufacturing method of thin film multilayer substrates such as LSI is described in Japanese Unexamined Patent Publication No. 5
No. 7-208153 - Appearance inspection equipment as described in #, Yamaguchi et al., "Wafer Micro-Dimension Measurement Technology", Journal of the Japan Society for Precision Engineering, 54/4/198B, pp. 34 to 38
The pattern quality is inspected using a line width sub-length device, which is discussed in this paper, and the process status is monitored before manufacturing, and chips in which defects are detected during such a lateral strain process will be rejected in the final It had been abandoned.

[Problem to be solved by the invention]

The above-mentioned conventional technology assumes mass production using silicon wafer 1 like LSI chips, and requires a small pre-pouring method such as forming multilayer thin film wiring turns on a ceramic multilayer substrate. It was not intended to be a manufacturing method for objects that require high production costs.

An object of the present invention is to provide a method for improving the yield of the above-mentioned objects that are produced in small quantities and require high production costs.

Another object of the present invention is to improve the efficiency of calibration and correction.

[Means to solve the problem]

In order to achieve the above purpose, in the thin film manufacturing process,
This method involves detecting and inspecting the wiring pattern on the insulating film in winter, correcting defective parts, and then forming the next layer of insulating film and the wiring pattern thereon.

In order to achieve the above-mentioned other objects, a means is used for illuminating or detecting a source of wavelength in a region where the transmittance of the gland is low and the reflectance of the wiring pattern is low.

Furthermore, in order to achieve the other objects mentioned above, means for detecting not only specularly reflected light from the pattern but also scattered light is used.

In addition, in order to achieve the other objects mentioned above, a means is used for illuminating the pattern from multiple directions and detecting reflected light.

[Effect]

The above-mentioned FfJ inspects the wiring pattern of each layer, corrects defective parts, and then forms the pattern of the next layer on top of it, so defects do not accumulate (and yield can be improved). .

Also,? By using light with a wavelength in the region where the transmittance of the edge film is low and the reflectance of the wiring pattern is high, the reflected light from the underlying pattern below the insulating group is extremely weak (as shown in Figure 2). This makes it possible to reveal only the wiring pattern on the top layer.This makes it possible to avoid detecting defective parts in the lower layer that have already been inspected and corrected, improving the efficiency of inspection and correction.

In addition, when illuminating a pattern with steps, the light irradiated on the step portion of the pattern escapes to the side, resulting in the step portion being detected as dark and causing a disconnection at this portion. I can't tell if it's a step part or not. Therefore, by detecting light that is scattered to the side, it is possible to detect even the brightest stepped areas.Therefore, there are fewer false alarms or oversights of defective areas (and the yield can be improved). .

Furthermore, as shown in FIG. 4, when illuminated from multiple directions, the stepped portion can also be detected.

[Examples] An embodiment of the present invention will be described below with reference to FIG.

In step 1 of FIG. 1, an aluminum wiring pattern 102α is formed on the ceramic substrate 100. In step 2, the insulating film p I Q 10! lα is formed, and in step 5, a through hole is formed to connect with the underlying wiring pattern. Next, in step 4, a bottom film of aluminum is formed, and in step 5, a 7-photoresist 104α is applied on the aluminum, followed by development, and in step 6, the aluminum is etched and the resist 104α is peeled off. In the process 60 diagram, a short circuit defect is illustrated. Then, in step 7, pattern inspection is performed, and based on the result, defective portions are corrected in step 8. After correcting the defective portion, an insulating film p I Q 105b is formed in step 9, and steps 10 to 10 are performed.
16, a wiring pattern is formed.

According to this embodiment, since the wiring pattern of each layer is inspected and corrected after completion of formation, defects do not accumulate.

This makes it possible to increase yields.

In addition, in this practical example, we have shown a method for manufacturing a thin film multilayer board consisting of an insulating film and a wiring pattern.
The present invention can also be applied to a method of manufacturing an object in which a resistive film is formed on an insulating film as shown in Section 1.

In the embodiment described above, it is assumed that the wiring pattern is inspected and corrected after etching is completed, but a metal film is formed on the insulating film, and a resist is applied and developed to form the wiring pattern. It is also possible to inspect and correct it once it is completed.

In this case, the resist pattern can be created again by peeling off the resist turns on the defective winding.

Next, FIG. 5 shows an embodiment for optically incorporating a VC into a wiring pattern.

The laser 5 (H has linearly polarized light, the laser light is expanded by a beam expander 502, and the polarizing beam splitter 50 is adjusted so that the linearly polarized light of the n laser passes through as it is.
3, and a 174-wave plate 504 that converts linearly polarized light into circularly polarized light.
, a light spot of an appropriate size is condensed by a condenser lens 505 and irradiated onto the object 110 . This spot light is transmitted to a scanning mirror 506 installed in the illumination optical path.
stage 5 in the direction perpendicular to the scanning direction.
07 is driven by a motor 508 so that the entire surface of the object 110 can be scanned with the spot light. Of the reflected light from the object, scattered light reflected laterally is collected by an integrating sphere 509 and converted into an electrical signal by a detector 510α and an amplifier 511α. On the other hand, the specularly reflected light is reflected by the scanning mirror so6. When the light passes through the lens 505 and the quarter-wave plate 504, the circularly polarized light is again converted into linearly polarized light. However, the polarization plane of this linearly polarized light is perpendicular to the polarization plane of the laser of the light source, and is separated from the light path by the polarizing beam splitter 503, and is sent to the detector 510b*amplifier 5.
11b into an electrical signal. Amplifier 511α*
The output signals of 511b are each sent to an A/D converter 512α.
, 512b, it is converted into a digital signal, and the ratio setter 5
13α and 515b by appropriate coefficients K and K', and adder 514 increases both signals.
It is sent to the pattern shape inspection processing device 515.

An example of a pattern shape inspection processing device is shown in FIG.

A normal pattern shape is input in advance into the pattern memory 702 that stores the pattern shape of each layer (. Then, before inspection, the pattern of the top layer to be inspected, for example, 7
Select 02-2. The signal from the adder 514 is binarized by the binarization circuit 701, and in synchronization with pattern detection, the binary signal of the normal pattern is read out from the pattern memory 702-2 and compared by exclusive OR 703. If there is a portion that differs from the normal pattern, a value of 1° is output, so the defect determination circuit 704 detects this and outputs the result.

The wavelength of the laser 501 is as shown in FIG.
Select a wavelength of 45 (l nm or less) that provides a large difference in reflectance between the wiring pattern and the absolute*V and resistive film.
42rLm, 325rLm, 564nm Ar laser, and 351rLm are available. The spot light irradiated onto the object is reflected upward if the pattern 201α is flat as shown in FIG. However, as shown in Fig. 3, the pattern 201 also has a step, and the light irradiated with this partial pressure is scattered to the side, and if only the light reflected upward was detected and drawn, such a step would be detected. The part gets dark and it's on the 7th floor! It is difficult to distinguish whether it is the membranous part or the stepped part. Therefore, by collecting and detecting not only the specularly reflected light but also the scattered light with the integrating sphere 509 and outputting it together with the specularly reflected light, even a pattern with steps can be realized.

Further, depending on the formation state of the h-array pattern, the regular reflection component of the reflected light may be small and the scattered component may be large. In this case, it is possible to make the pattern apparent just by detecting the scattered light components.

In addition, in this embodiment, after converting to digital No. 48, the difference in button detection efficiency between the regular reflection light detection output and the scattered light detection output, and the difference in detection sensitivity of the detectors 510 (Z, 510b) are corrected. are multiplied by coefficients 515α and 515b, which can be easily converted by instructions from a computer or the like.

In this embodiment, the spot source is scanned by the scanning mirror 506, but it goes without saying that the spot source can be scanned by a rotating polyhedron, an acousto-optic element, or the like.

Next, an example of a pattern correction device is shown in FIGS. 8 and 9.

FIG. 8 shows an example of a device that uses a laser to cut out unnecessary parts of a pattern, and an XY stage 507 is moved based on defect position data obtained by an inspection device like the one shown in FIG. Then, the light source 904 illuminates the sample 110, and the TV left camera 01 confirms whether there is a defect that should be corrected. If it is a defect that should be corrected, the laser 906 irradiates the defect to correct the defect.

FIG. 9 is an example of an apparatus for adding a new pattern to a cut-off part of the pattern. Based on the defect position data, the xy stage 302 is moved and the light source 904 and T
The defect to be corrected is confirmed using the V left camera 01.

Then, a CVD gas 908 is sent into the chamber, a reaction is caused using a laser 906, and a pattern is added at a desired location. The CVD gas 908 is selected depending on the material of the pattern. For example, in the case of an aluminum pattern, trimethylaluminum or triimbutylaluminum is used. Further, as the laser 906, an excimer laser,
A 4r laser, a YAG laser, etc. may be used.

FIG. 10 shows a second example of revealing the top layer pattern. In this embodiment, instead of detecting specularly reflected light using the polarizing beam splitter 503 and 174 wavelength plate 504 in the embodiment shown in FIG. 5, specularly reflected light is detected using a half mirror 521 and a condensing lens 522. Further, the specular reflection light detection signal and the scattered light detection signal are boosted by an anamig voltage using an operational amplifier 520.

According to this embodiment, detection signals of specularly reflected light and scattered light can be extracted with a simple configuration.

FIG. 11 shows a third example of revealing the top layer pattern. In this embodiment, bright-field illumination and dark-field illumination are performed simultaneously, and only a specific improved light is transmitted through the filter 607 and detected. Bright field illumination is provided by the light source 601b
The source is illuminated onto the sample 110 through a half mirror 604 and an objective lens 605. On the other hand, in dark field illumination, the light source 601α is converted into parallel light by a parabolic mirror 602, and is irradiated onto the sample surface by a dark field illumination mirror 603. The pattern mounds are imaged onto a detector 608 by an objective lens 605, or a filter 607 is provided in front of the detector 60B, allowing only certain refinements to pass through.

In this embodiment, a water lamp, a xenon lamp, or the like can be used as the light sources 601α and 601b.

Further, the dark field illumination mirror 61J3 can be a parabolic mirror or a polygonal arm. According to this embodiment, since the pattern is imaged by the objective lens 605, an f\L image device such as a linear sensor or an area sensor can be used as the detector 608, and a detected image can be easily obtained.

The fourth example of revealing the top layer pattern is shown in the twelfth prisoner. In this embodiment, light from a mercury lamp 601α is transmitted to the original fiber 52.
0, the sample 110 is illuminated from multiple directions. At the same time, the source of Suigintou 601 b is half mirror 60.
4, epi-illumination is applied onto the sample 110. and sample 11
The reflected light from 0 is captured by the objective lens 605, and only the light of 4507 Lm or less is passed through the filter 607K, and its image is captured by the detector 608. In this embodiment, the optical fiber 620 is arranged around the sample 110, but the optical fiber may be illuminated in a ring shape as shown in FIG.

According to this embodiment, since it is easy to illuminate from multiple directions, the unevenness of illumination on the sample 110 becomes relatively small, and it becomes easy to detect patterns with steps.

FIG. 14 shows a fifth example of revealing the top layer pattern. In this embodiment, the light from the light source 601 is irradiated into the integrating sphere 509 without directly hitting the sample 110. Since the inner wall of the integrating sphere 509 is covered with a material such as nocurium sulfate that has a high reflectance and serves as a completely diffusing surface, the sample 110 is irradiated from all around. The reflected light from the sample is then passed through the objective lens 605. It is captured by a detector 608 via a filter 607 and output as an image.

According to this embodiment, since illumination can be performed from all around, the illumination is completely even and it is extremely easy to detect patterns with steps.

〔Effect of the invention〕

According to the present invention, in the manufacturing process of a thin film multilayer substrate, the pattern on the top layer is exposed and inspected, defects are corrected, and then the next layer is formed. Correction efficiency is improved without detecting underlying patterns.

[Brief explanation of drawings]

FIG. 1 is a diagram showing an embodiment of the present invention, FIGS. 2 to 4 are diagrams each showing reflection of light on a sample surface, and FIG. 5 is an embodiment of a pattern revealing method using an inspection device. The sixth factor is a diagram showing an example of processing in the inspection device, and the seventh factor is a diagram showing an example of processing in the inspection device.
Figure 8 shows the spectral reflectance, Figure 8 shows the first embodiment of the pattern correction device, Figure 9 shows the second embodiment of the pattern correction device, and Figure 10 shows the pattern revealing. FIG. 11 is a diagram showing another embodiment of the pattern manifestation method; FIG. 12 is a diagram illustrating another embodiment of the pattern manifestation method; FIG. 13 is a diagram showing another embodiment of the pattern manifestation method, and FIG. 14 is a diagram showing another embodiment of the pattern manifestation method.
FIG. 5 is a cross-sectional view of a resistor group formed on an insulating film. [Explanation of symbols] 100...Ceramic substrate 102...Aluminum wiring pattern 103...PIQ 104...Photoresist 201...Wiring pattern 202...Insulating film...Laser...Beam extract B...Polarized beam beam...1. 'AlL long plate...Scanning mirror...Motor...Detector...AD converter...Binarization processing unit...Exclusive OR...TV left camera...Laser...・CVD gas...Operational amplifier...Dark field illumination mirror...Optical fiber bandalitter...Condensing lensner...XY stage...Integrating sphere...Amplifier...Tataguchi Tantoki... Pattern memory...defect determination unit...objective lens...chamber...vacuum pump...parabolic mirror...filterf 1 diagram

Claims (8)

[Claims] 1. In a method for manufacturing a substrate having thin film multilayer wiring,
After forming an insulating film and forming a wiring pattern on it,
It is characterized by optically revealing the wiring pattern, detecting defects in this wiring pattern, correcting the defective part based on the detected defect position data, and then forming an insulating film and wiring pattern on it. A method for manufacturing a thin film multilayer substrate. 2. In the method for optically revealing the wiring pattern, the detection is performed using light having a wavelength in a region where the insulating film has a low light transmittance and the wiring pattern has a high reflectance. The method for manufacturing a thin film multilayer substrate as described in . 3. In the method for optically revealing a wiring pattern, specularly reflected light or scattered light, or both specularly reflected light and scattered light from the wiring pattern are detected. 2. The method for manufacturing a thin film multilayer substrate according to item 2. 4. The method according to claim 1 or 2, characterized in that the method for optically revealing a wiring pattern includes illuminating an inspection target from multiple directions and detecting reflected light from the wiring pattern. A method for manufacturing a thin film multilayer substrate. 5. In the target, a resistive film is formed on the insulating film,
Claim 1 or 2 or 3 or 4, characterized in that a wiring pattern is formed thereon.
The method for manufacturing a thin film multilayer substrate as described in . 6. 5. The method of manufacturing a thin film multilayer substrate according to claim 1, 2, 3, or 4, wherein the insulating film is a polyimide organic material. 7. 6. The thin film multilayer substrate manufacturing method according to claim 1, 2, 3, 4, or 5, wherein the material of the wiring pattern is Al. 8. 7. The method of manufacturing a thin film multilayer substrate according to claim 1, 2, 3, 4, 5, or 6, wherein the resistive thin film is Cr-SiO_2.