JPH0291364U - - Google Patents

Description

[Brief explanation of drawings]

1 and 2 are diagrams showing a first embodiment of the present invention, and FIG. 2 is a plan view of FIG. 1. 3 and 4 are views showing the second embodiment, and FIG. 4 is a side view of FIG. 3. FIG. 5 is a diagram showing a laser array device of a third embodiment. Figures 6 and 7
The figures show the fourth embodiment, where FIG. 7 is a passageway and FIG. 6 is a diagram of a laser array device using the same. 8, 9, and 10 are cross-sectional views of the passage. FIGS. 11 and 12 are diagrams showing conventional examples. 1,201...Heat sink, 2,202...Brazing material, 3,23,203...GaAs substrate, 4,20
4... Semiconductor laser array element, 5, 25, 55,
205...Groove (passage), 6a, 6b, 6c, 6d...
Electrode, 7, 33, 72... Ti/Pt/Au metal layer, 8, 28, 58, 70, 80, 208... Si plate (passage member), 8f, 8b... Passage end surface, 9a,
9b, 9c, 9d...Aisle, 10, 30, 210...
Photodiode, 11a, 11b, 11c, 1
1d... Light receiving section, 21... SiC heat sink, 22
, 34...PbSn brazing material, 31a, 31b, 31
c, 31d...light receiving section, 32a, 32b, 32c,
32d...Ti/Pt/Au pattern electrode, 36,
37a, 37b, 37c, 37d... Wire bonding, 59a, 59b, 59c, 59d... Passage, 78, 81... SiO ₂ film, 85... Groove, 204
a, 204b, 204c...laser oscillation region, 20
6a, 206b, 206c... semiconductor laser element,
209a, 209b, 209c...Passage, 211a
, 211b, 211c...light receiving section, 221b, 22
2b, 223b... Rear emitted light.

Claims (1)

[Claims for Utility Model Registration] (1) A plurality of laser oscillation regions are arranged close to each other on the same substrate, and each includes a semiconductor laser array element that emits a laser beam forward and backward, and a semiconductor laser array element that emits the laser beam on the rear side. The plurality of paths include a plurality of spatially separated paths that propagate while being isolated from other rear beams, and a light-receiving element that receives the laser beam that has passed through the paths. A semiconductor laser array device characterized in that it is provided parallel to an entering laser beam. (2) A plurality of laser oscillation regions are arranged close to each other on the same substrate, and each has a semiconductor laser array element that emits a laser beam forward and backward, and the rear beams are isolated from each other from other rear beams. a plurality of paths spatially separated from each other to allow the laser beam to propagate; a light-receiving element that receives the laser beam that has passed through the paths; and an electrode layer electrically separated from each other by the same spacing as the oscillation region spacing on one principal surface. a heat sink provided therein, the oscillation region side of the semiconductor laser array element is electrically and thermally fixed to the electrode layer facing each other, and the passageway is electrically insulated from the electrode layer and fixed on the heat sink. A semiconductor laser array device characterized by: (3) The semiconductor laser array device according to claim 1 or 2, wherein a reflective film is formed on the inner wall of the passage. (4) A semiconductor laser array device according to claim 2 or 3, characterized in that grooves are provided along the passages on the outside of the passages at both ends of the plurality of passages. (5) In the semiconductor laser array device according to claims 2, 3, and 4, the brazing material for fixing the passage and the heat sink is made of a material with a lower separation point than the brazing material for fixing the semiconductor laser array element and the heat sink. Features of semiconductor laser array device.