JPH0290619A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPH0290619A JPH0290619A JP24504888A JP24504888A JPH0290619A JP H0290619 A JPH0290619 A JP H0290619A JP 24504888 A JP24504888 A JP 24504888A JP 24504888 A JP24504888 A JP 24504888A JP H0290619 A JPH0290619 A JP H0290619A
- Authority
- JP
- Japan
- Prior art keywords
- wiring
- film
- semiconductor device
- oxide film
- conductor layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 15
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 4
- 239000010410 layer Substances 0.000 abstract description 15
- 239000004020 conductor Substances 0.000 abstract description 11
- 238000013508 migration Methods 0.000 abstract description 6
- 230000005012 migration Effects 0.000 abstract description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052814 silicon oxide Inorganic materials 0.000 abstract description 4
- 239000000758 substrate Substances 0.000 abstract description 4
- 239000011229 interlayer Substances 0.000 abstract description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 1
- 229910052593 corundum Inorganic materials 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
Landscapes
- Drying Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は半導体装置に関し、特に配線の構造に関する。[Detailed description of the invention] [Industrial application field] The present invention relates to a semiconductor device, and particularly to a wiring structure.
従来の半導体装置は、例えば第２図に示すように、半導
体基板１上の眉間絶縁膜４上に形成されたＡｆ配線５の
上には、直接絶縁保護膜としてのＰＳＧ膜６が形成され
ていた。尚、第２図において２はシリコン酸化膜、３は
多結晶シリコンからなり、ゲート電極を構成する導体層
である。In the conventional semiconductor device, for example, as shown in FIG. 2, a PSG film 6 as an insulating protective film is directly formed on the Af wiring 5 formed on the glabellar insulating film 4 on the semiconductor substrate 1. Ta. In FIG. 2, 2 is a silicon oxide film, and 3 is a conductor layer made of polycrystalline silicon and constitutes a gate electrode.
配線中を電流が流れる場合、電子の流れによって金属中
の原子が電子の力を受け、一方向の電流の流れにより原
子が移動してゆく、いわゆるマイグレーションが生じ、
配線の一部で配線幅が減少するという現象が起きる。そ
して、一箇所で配線幅が減少すると、この部分は他の配
線部より抵抗値が増大し電流の流れを大きく受けるよう
になり、金属原子がより大きな力を受けて移動速度が速
まり、最終的にはこの部分において配線の切断というこ
とがおきる。そのため半導体集積回路の微細化が進み、
配線幅の縮小化が進むとマイグレーションの問題がより
大きなものとなる。When current flows through wiring, the atoms in the metal are subjected to electron force due to the flow of electrons, causing so-called migration, where the atoms move due to the flow of current in one direction.
A phenomenon occurs in which the wiring width is reduced in a part of the wiring. When the wiring width decreases in one place, this part has a higher resistance value than other wiring parts and receives a larger current flow, and the metal atoms receive a larger force and move faster, resulting in the final Generally speaking, the wiring may be cut at this part. As a result, the miniaturization of semiconductor integrated circuits has progressed,
As the wiring width becomes smaller, the problem of migration becomes more serious.
一般に導体中を流れる電子は、導体中心部よりも表面に
近い方がより多く流れる。そのため、金属原子の移動は
導体表面部より起こるものとなる。Generally, more electrons flow in a conductor near the surface than in the center of the conductor. Therefore, the movement of metal atoms occurs from the surface of the conductor.
第２図に示した従来の半導体装置におけるＡＪ配線５と
ＣＶＤ法により形成されたＰＳＧ膜６との接着性はそれ
程強くはないため、上記理由によりマイグレーションに
弱いという問題がある。Since the adhesion between the AJ wiring 5 and the PSG film 6 formed by the CVD method in the conventional semiconductor device shown in FIG. 2 is not so strong, there is a problem that it is susceptible to migration for the above-mentioned reason.
本発明の半導体装置は、アルミニウムを主成分とする配
線層を有する半導体装置であって、前記配線層の表面は
酸化膜により覆われているものである。The semiconductor device of the present invention is a semiconductor device having a wiring layer mainly composed of aluminum, and the surface of the wiring layer is covered with an oxide film.
次に、本発明の実施例について図面を参照して説明する
。Next, embodiments of the present invention will be described with reference to the drawings.
第１図は本発明の一実施例の断面図である。FIG. 1 is a sectional view of an embodiment of the present invention.
第１図において、半導体基板１上にはシリコン酸化膜２
を介して導体層３が形成されている。この導体層３は、
例えば多結晶シリコンからなるゲート電極である。そし
て、この導体層３上には眉間絶縁膜４を介してＡ１配線
５が形成されている。そして特に、このＡＪ配線５の表
面にはＡＪ、Ｏ，膜７が設けられている。尚、６は絶縁
保護膜としてのＰＳＧ膜である。In FIG. 1, a silicon oxide film 2 is formed on a semiconductor substrate 1.
A conductor layer 3 is formed through the conductor layer 3. This conductor layer 3 is
For example, it is a gate electrode made of polycrystalline silicon. A1 wiring 5 is formed on this conductor layer 3 with a glabella insulating film 4 interposed therebetween. In particular, an AJ, O, film 7 is provided on the surface of this AJ wiring 5. Note that 6 is a PSG film as an insulating protective film.
Ａ々２０’３膜７は、／Ｍｌ配線５を形成したのち、酸
素雰囲気中で５００〜６００℃で熱処理することにより
、２００〜３００Ａの厚さに形成できる。The A20'3 film 7 can be formed to a thickness of 200 to 300 Å by performing heat treatment at 500 to 600° C. in an oxygen atmosphere after forming the /Ml wiring 5.
このように構成された本実施例によればＡＪＩ配線５は
Ａｆｆ１２０．膜により保護され応力が与えられるため
、マイグレーションの発生は抑制されたものとなる。更
に水分を遮断できるためＡ１配線の腐食を防ぐことがで
きる。According to this embodiment configured in this way, the AJI wiring 5 is Aff120. Since the film protects and applies stress, the occurrence of migration is suppressed. Furthermore, since moisture can be blocked, corrosion of the A1 wiring can be prevented.
尚、上記実施例においてはＡ１配線は１層の場合につい
て説明したが、２層以上であってもよいことは勿論であ
る。In the above embodiment, the case where the A1 wiring is one layer has been described, but it goes without saying that it may be two or more layers.
以上説明したように本発明は、アルミニウムを主成分と
する配線層の表面を酸化膜で覆って密着させ、配線層表
面に応力を与えているため、マイグレーションに強い配
線を有する半導体装置が得られる。As explained above, in the present invention, the surface of the wiring layer mainly composed of aluminum is covered with an oxide film and brought into close contact with each other, and stress is applied to the surface of the wiring layer, so that a semiconductor device having wiring that is resistant to migration can be obtained. .
第１図は本発明の一実施例の断面図、第２図は従来の半
導体装置の一例の断面図である。
１・・・半導体基板、２・・・シリコン酸化膜、３・・
・導体層、４・・・層間絶縁膜、５・・・Ａ、Ｒ配線、
６・・・ＰＳＧ膜、７・・・ＡＪ、０３膜。FIG. 1 is a sectional view of an embodiment of the present invention, and FIG. 2 is a sectional view of an example of a conventional semiconductor device. 1... Semiconductor substrate, 2... Silicon oxide film, 3...
・Conductor layer, 4... Interlayer insulating film, 5... A, R wiring,
6...PSG film, 7...AJ, 03 film.
Claims (1)
置において、前記配線層の表面は酸化膜により覆われて
いることを特徴とする半導体装置。1. A semiconductor device having a wiring layer containing aluminum as a main component, wherein a surface of the wiring layer is covered with an oxide film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24504888A JPH0290619A (en) | 1988-09-28 | 1988-09-28 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24504888A JPH0290619A (en) | 1988-09-28 | 1988-09-28 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0290619A true JPH0290619A (en) | 1990-03-30 |
Family
ID=17127806
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP24504888A Pending JPH0290619A (en) | 1988-09-28 | 1988-09-28 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0290619A (en) |
-
1988
- 1988-09-28 JP JP24504888A patent/JPH0290619A/en active Pending
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