JPH0289356A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPH0289356A
JPH0289356A JP24200888A JP24200888A JPH0289356A JP H0289356 A JPH0289356 A JP H0289356A JP 24200888 A JP24200888 A JP 24200888A JP 24200888 A JP24200888 A JP 24200888A JP H0289356 A JPH0289356 A JP H0289356A
Authority
JP
Japan
Prior art keywords
control
semiconductor device
power
substrate
external
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP24200888A
Other languages
Japanese (ja)
Inventor
Yasuhiro Otsuka
康宏 大塚
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP24200888A priority Critical patent/JPH0289356A/en
Publication of JPH0289356A publication Critical patent/JPH0289356A/en
Pending legal-status Critical Current

Links

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  • Structures For Mounting Electric Components On Printed Circuit Boards (AREA)

Abstract

PURPOSE:To achieve multiple functions by providing a control substrate where the front surface and rear surface can be provided with control-part. CONSTITUTION:A control substrate 7 is kept in a case 1 and a control element 8 is mounted to the front surface and rear surface of the control substrate 7. Also, an external output terminal 10 is projected to the upper surface of a semiconductor device from the edge of a power part substrate 4 without passing through the control substrate 7 and an external control terminal 11 is projected from the edge of the control substrate 7 toward the upper surface of the semiconductor device. Namely, the external output terminal 10 is projected along one side of a rectangle on the upper surface of the semiconductor device and the external control terminal 11 is projected along a side next to the above one side on the upper surface of the semiconductor device. Thus, the mounting area of the control element 8 becomes two times larger than conventional one-side mounting. Therefore, the control element 8 can be mounted two times larger for achieving multiple functions.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 この発明は、半導体装置に関し、特にパワーデバイスか
ら成るパワー部とパワー部を制御する制御部とを有する
半導体装置に関するものである。
DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a semiconductor device, and more particularly to a semiconductor device having a power section including a power device and a control section for controlling the power section.

(従来の技術〕 第3図はこの種の半導体装置である従来のパワーICモ
ジュールの構造を示す断面図である。図において、1は
ケース、2はケース1の下方に設けられたパワー部、3
はケース1の上方に設けられたパワー部2を制御するた
めの制御部である。
(Prior Art) Fig. 3 is a sectional view showing the structure of a conventional power IC module, which is a semiconductor device of this type.In the figure, 1 is a case, 2 is a power part provided below the case 1, 3
is a control section for controlling the power section 2 provided above the case 1.

パワー部2は、パワー部基板4、絶縁板5、複数のパワ
ーデバイス素子6より成る。絶縁板5はパワー部基板4
上に設けられ、複数のパワーデバイス素子6は絶縁板5
上に実装されている。制御部3は制御基板7、複数の制
′PJ11素子8より成る。制御素子8は、制御11M
板7の下面に実装されている。
The power section 2 includes a power section substrate 4, an insulating plate 5, and a plurality of power device elements 6. The insulating plate 5 is the power part board 4
The plurality of power device elements 6 are provided on the insulating plate 5.
implemented on top. The control section 3 consists of a control board 7 and a plurality of control PJ11 elements 8. The control element 8 is a control element 11M.
It is mounted on the bottom surface of the plate 7.

9はパワー部2を制御部3に接続するための制御部接続
端子、10はパワー部2の出力を外部へ取り出すための
外部出力端子である。外部出力端子10はケース1の側
壁より外部へ突出している。
9 is a control unit connection terminal for connecting the power unit 2 to the control unit 3, and 10 is an external output terminal for taking out the output of the power unit 2 to the outside. The external output terminal 10 protrudes from the side wall of the case 1 to the outside.

11は外部からの制御信号を制御部3へ伝達する外部制
御端子であり、外部制御端子11は、外部出力端子10
が突出している同一側壁より外部へ突出している。12
はケース1内を固定するため、ケース1内を満たしてい
る封止樹脂である。
11 is an external control terminal that transmits a control signal from the outside to the control unit 3, and the external control terminal 11 is connected to the external output terminal 10.
It protrudes outward from the same side wall where it protrudes. 12
is a sealing resin that fills the inside of the case 1 in order to fix the inside of the case 1.

〔発明が解決しようとする課題] パワーICモジュールのような従来の半導体装置は以上
のように構成されており、制御基板7の片面にのみ制御
素子8を実装しているので、制御素子8の実装面積が制
御基板7の片面の面積に限定され、多機能化が困難であ
るという問題点があった。
[Problems to be Solved by the Invention] A conventional semiconductor device such as a power IC module is configured as described above, and the control element 8 is mounted only on one side of the control board 7. There was a problem in that the mounting area was limited to the area of one side of the control board 7, making it difficult to provide multiple functions.

この発明は上記のような問題点を解消するためになされ
たもので、より多くの機能を有するように多機能化を図
ることが可能な半導体装置を得ることを目的とする。
The present invention has been made to solve the above-mentioned problems, and an object thereof is to obtain a semiconductor device that can be multi-functionalized so as to have more functions.

〔課題を解決するための手段〕[Means to solve the problem]

この発明は、パワーデバイスから成るパワー部と、この
パワー部の制御を行う制御部とを有する半導体装置を対
象としている。この発明に係る半導体装置は、容器と制
m+基板とを備えて構成されている。容器の1つの面は
、パワー部が形成される基板によって形成され、この基
板上のパワー部の形成可能領域は容器の内方に向けられ
ている。
The present invention is directed to a semiconductor device having a power section including a power device and a control section that controls the power section. A semiconductor device according to the present invention includes a container and a control m+ substrate. One side of the container is formed by a substrate on which the power section is formed, and the area on which the power section can be formed is directed towards the inside of the container.

制御II基板は容器内に納められ、その表面及び裏面が
制御部の形成可能領域とされる。
The control II substrate is housed in a container, and its front and back surfaces are areas where a control section can be formed.

〔作用〕[Effect]

この発明における制御基板は、表面及び裏面が制御部形
成可能領域であるため制御基板の両面に制御部を形成す
ることができる。
In the control board according to the present invention, since the front and back surfaces are areas in which the control section can be formed, the control section can be formed on both sides of the control board.

(実施例) 第1図はこの発明に係る半導体装置の一構成例を示す断
面図であり、この断面図は、第2図にボしたこの発明に
係る半導体装置の外観斜視図のA−A線に沿って切断し
た場合の図である。第1図において、第3図に示した従
来例との第1の相違点は、制御基板7をケース1内に納
め、かつ制御基板7を表面及び裏面に制御素子8を実装
することができる基板に代えたことである。第2の相違
点は、外部出力端子10をパワー部基板4の端から制a
m板7を通り抜けることなく半導体装置の上面に突出さ
け、かつ外部制御端子11を制御基板7の端から半導体
装置の上面に突出させ、外部出力端子10と外部制御I
#a子11との位置関係を第2図に示すようにしたこと
である。つまり、外部出力端子10を半導体装置の上面
の長方形の一辺に沿って突出させ、外部制御端子11を
半導体装置の上面の上記−辺のとなりの辺に沿って突出
させている。その他の構成は、従来と同様である。
(Embodiment) FIG. 1 is a cross-sectional view showing an example of the configuration of a semiconductor device according to the present invention, and this cross-sectional view is taken along line A-A of the external perspective view of the semiconductor device according to the present invention shown in FIG. It is a figure when cut along a line. In FIG. 1, the first difference from the conventional example shown in FIG. 3 is that the control board 7 is housed in the case 1, and the control element 8 can be mounted on the front and back surfaces of the control board 7. It was replaced with a board. The second difference is that the external output terminal 10 is controlled from the edge of the power section board 4.
The external control terminal 11 is made to protrude onto the top surface of the semiconductor device without passing through the m-board 7, and the external control terminal 11 is made to protrude from the edge of the control board 7 onto the top surface of the semiconductor device, so that the external output terminal 10 and the external control I
The positional relationship with child #a 11 is as shown in FIG. That is, the external output terminal 10 is made to protrude along one side of the rectangle on the top surface of the semiconductor device, and the external control terminal 11 is made to protrude along the side next to the negative side of the top surface of the semiconductor device. The other configurations are the same as before.

この実施例では両面実装可能な制御基板7(プリント基
板等)を設けた。従って、制御素子8の実装面積が従来
の片面実装の場合に比し2倍になる。そのため、制御素
子8を従来回路の2倍実装することができ、従来回路よ
り多機能化が図れる。
In this embodiment, a control board 7 (printed board, etc.) that can be mounted on both sides is provided. Therefore, the mounting area of the control element 8 is doubled compared to the conventional single-sided mounting. Therefore, it is possible to implement twice as many control elements 8 as in the conventional circuit, and the circuit can have more functions than the conventional circuit.

また、この実施例では、外部出力端子10が制御基板7
を突き抜けることなく半導体装置の上面に突出している
ので、制御基板7の実装面積を狭めるご仁はない。
Further, in this embodiment, the external output terminal 10 is connected to the control board 7.
Since it protrudes onto the top surface of the semiconductor device without penetrating through it, there is no need to reduce the mounting area of the control board 7.

ところで、従来よりパワーICモジュール等の半導体装
置の厚さは薄くなる傾向にある。そのため、第3図に示
す従来の半導体装置では、外部出力端子10と外部制御
端子11との隙間が狭くなり、tll電が起こる危険性
があるという問題があった。一方、この実施例では、第
2図に示すように、半導体装置の上面から外部出力端子
10.外部制御端子11を突出させている。半導体装置
の上面面積は側面積よりも大きく、従って外部出力端子
10、外部制御端子11を例えば前述のような位置関係
で半導体装置の上面に突出させると、前記2つの端子の
間の距離が従来のようにケース側面から突出さVた場合
に比し大きくなる。その結果、外部出力端子10と外部
出力端子11との間の放電の危険性が低下するという効
果がある。
Incidentally, there has been a tendency for semiconductor devices such as power IC modules to become thinner than before. Therefore, in the conventional semiconductor device shown in FIG. 3, there was a problem in that the gap between the external output terminal 10 and the external control terminal 11 became narrow, and there was a risk that TLL electricity would occur. On the other hand, in this embodiment, as shown in FIG. 2, external output terminals 10. An external control terminal 11 is made to protrude. The top surface area of the semiconductor device is larger than the side surface area. Therefore, when the external output terminal 10 and the external control terminal 11 are made to protrude from the top surface of the semiconductor device in the above-mentioned positional relationship, the distance between the two terminals becomes smaller than that of the conventional one. It is larger than when it protrudes from the side of the case like this. As a result, there is an effect that the risk of electric discharge between the external output terminals 10 and 11 is reduced.

(発明の効果〕 以上のように、この発明によれば、表面及び裏面が制御
部形成可能領域である制御基板を設けたので、従来に比
し2倍の制御部を形成することができ、その結果多機能
化が図れるという効果がある。
(Effects of the Invention) As described above, according to the present invention, since the control board is provided whose front and back surfaces are areas in which control parts can be formed, it is possible to form twice as many control parts as compared to the conventional method. As a result, there is an effect that multifunctionality can be achieved.

【図面の簡単な説明】[Brief explanation of drawings]

第1図はこの発明に係る半導体装置の一実施例を示す断
面図、第2図はこの発明に係る半導体装置の外観斜視図
、第3図は従来のパワーICモジュールの断面図である
。 図において、1はケース、2はパワー部、3は制御部、
4はパワー部基板、6はパワーデバイス素子、 7は制御基板、 8は制御素子である。 なお、 各図中同一符号は同一または相当部分を示す。
FIG. 1 is a sectional view showing an embodiment of a semiconductor device according to the present invention, FIG. 2 is an external perspective view of the semiconductor device according to the invention, and FIG. 3 is a sectional view of a conventional power IC module. In the figure, 1 is a case, 2 is a power section, 3 is a control section,
4 is a power unit board, 6 is a power device element, 7 is a control board, and 8 is a control element. Note that the same symbols in each figure indicate the same or equivalent parts.

Claims (1)

【特許請求の範囲】[Claims] (1)パワーデバイスから成るパワー部と、前記パワー
部の制御を行う制御部とを有する半導体装置であつて、 前記パワー部が形成される基板を一面に有し、前記基板
上の前記パワー部の形成可能領域が内方に向けられた容
器と、 前記容器内に納められ、表面及び裏面が前記制御部の形
成可能領域である制御基板とを備えたことを特徴とする
半導体装置。
(1) A semiconductor device having a power section including a power device and a control section for controlling the power section, the semiconductor device having a substrate on which the power section is formed on one side, and the power section on the substrate. What is claimed is: 1. A semiconductor device comprising: a container having a formable region facing inward; and a control substrate housed in the container, the front and back surfaces of which are the formable regions of the control section.
JP24200888A 1988-09-26 1988-09-26 Semiconductor device Pending JPH0289356A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP24200888A JPH0289356A (en) 1988-09-26 1988-09-26 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24200888A JPH0289356A (en) 1988-09-26 1988-09-26 Semiconductor device

Publications (1)

Publication Number Publication Date
JPH0289356A true JPH0289356A (en) 1990-03-29

Family

ID=17082887

Family Applications (1)

Application Number Title Priority Date Filing Date
JP24200888A Pending JPH0289356A (en) 1988-09-26 1988-09-26 Semiconductor device

Country Status (1)

Country Link
JP (1) JPH0289356A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008541117A (en) * 2005-05-20 2008-11-20 ユニバーシダ デ カスティーリャ ラマンチャ Interface injector device for connecting liquid chromatography and gas chromatography
JP2009043863A (en) * 2007-08-08 2009-02-26 Mitsubishi Electric Corp Semiconductor device
JP2009092672A (en) * 2008-12-24 2009-04-30 Shimadzu Corp Gas chromatograph
US8925369B2 (en) 2009-02-04 2015-01-06 Joint Analytical Systems Gmbh Device and method for preparing samples for gas chromatography
JP2016225520A (en) * 2015-06-02 2016-12-28 三菱電機株式会社 Vehicle-mounted electronic control device and manufacturing method of the same

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008541117A (en) * 2005-05-20 2008-11-20 ユニバーシダ デ カスティーリャ ラマンチャ Interface injector device for connecting liquid chromatography and gas chromatography
JP2009043863A (en) * 2007-08-08 2009-02-26 Mitsubishi Electric Corp Semiconductor device
JP2009092672A (en) * 2008-12-24 2009-04-30 Shimadzu Corp Gas chromatograph
US8925369B2 (en) 2009-02-04 2015-01-06 Joint Analytical Systems Gmbh Device and method for preparing samples for gas chromatography
JP2016225520A (en) * 2015-06-02 2016-12-28 三菱電機株式会社 Vehicle-mounted electronic control device and manufacturing method of the same

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