JPH0288254U - - Google Patents
Info
- Publication number
- JPH0288254U JPH0288254U JP1989149258U JP14925889U JPH0288254U JP H0288254 U JPH0288254 U JP H0288254U JP 1989149258 U JP1989149258 U JP 1989149258U JP 14925889 U JP14925889 U JP 14925889U JP H0288254 U JPH0288254 U JP H0288254U
- Authority
- JP
- Japan
- Prior art keywords
- conductive film
- layer
- transparent conductive
- solar cell
- metal conductive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- 238000005260 corrosion Methods 0.000 claims 1
- 230000007797 corrosion Effects 0.000 claims 1
- 239000011521 glass Substances 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Description
第１図は本考案の太陽電池モジユールの一実施
例を示す要部の斜視図、第２図は本考案の太陽電
池モジユールの概略的な構成を示す断面図、第３
図は低抵抗ａ―Ｓｉ層が挿入された本考案の太陽
電池モジユールと従来の太陽電池モジユールの相
対的な効率を示した特性図、第４図は従来の太陽
電池モジユールを示した平面図である。
１……透明導電膜、２……ａ―Ｓｉ層、３……
金属導電膜、４……太陽電池ユニツト、５……透
明導電膜と金属導電膜との接合部、６……低抵抗
ａ―Ｓｉ層。
FIG. 1 is a perspective view of essential parts showing one embodiment of the solar cell module of the present invention, FIG. 2 is a sectional view showing a schematic configuration of the solar cell module of the present invention, and FIG.
The figure is a characteristic diagram showing the relative efficiency of the solar cell module of the present invention in which a low resistance a-Si layer is inserted and a conventional solar cell module, and Figure 4 is a plan view showing the conventional solar cell module. be. 1... Transparent conductive film, 2... a-Si layer, 3...
Metal conductive film, 4...Solar cell unit, 5...Joint portion between transparent conductive film and metal conductive film, 6...Low resistance a-Si layer.
Claims (1)
よび金属導電膜３で形成された太陽電池ユニツト
４の透明導電膜１と金属導電膜３との接合部５を
接触させて直列または並列に連結した非晶質太陽
電池モジユールにおいて、 前記ａ―Ｓｉ層２の両方の電極に透明導電膜１
と金属導電膜３とを使用し、前記透明導電膜１と
金属導電膜３との間に低抵抗ａ―Ｓｉ層６をプラ
ズマＣＶＤ法で蒸着・挿入して、透明導電膜１を
低抵抗ａ―Ｓｉ層６で遮蔽させて、透明導電膜１
内の酸素による金属導電膜３の腐蝕を防止し得る
ことを特徴とする非晶質シリコン低抵抗太陽電池
モジユール。[Claims for Utility Model Registration] Junction 5 between transparent conductive film 1 and metal conductive film 3 of solar cell unit 4 formed of transparent conductive film 1, a-Si layer 2 and metal conductive film 3 on a glass substrate In an amorphous solar cell module connected in series or in parallel with
and a metal conductive film 3, and a low resistance a-Si layer 6 is deposited and inserted between the transparent conductive film 1 and the metal conductive film 3 by plasma CVD method, and the transparent conductive film 1 is formed into a low resistance a-Si layer 6. - Shielding with Si layer 6, transparent conductive film 1
1. An amorphous silicon low resistance solar cell module characterized by being able to prevent corrosion of a metal conductive film 3 due to oxygen in the module.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2019880021391U KR910007262Y1 (en) | 1988-12-24 | 1988-12-24 | Module for solor cell of armophous silicon |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0288254U true JPH0288254U (en) | 1990-07-12 |
Family
ID=19282466
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1989149258U Pending JPH0288254U (en) | 1988-12-24 | 1989-12-25 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPH0288254U (en) |
| KR (1) | KR910007262Y1 (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5939074A (en) * | 1982-08-26 | 1984-03-03 | Fuji Electric Co Ltd | Solar battery device |
-
1988
- 1988-12-24 KR KR2019880021391U patent/KR910007262Y1/en not_active IP Right Cessation
-
1989
- 1989-12-25 JP JP1989149258U patent/JPH0288254U/ja active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5939074A (en) * | 1982-08-26 | 1984-03-03 | Fuji Electric Co Ltd | Solar battery device |
Also Published As
| Publication number | Publication date |
|---|---|
| KR910007262Y1 (en) | 1991-09-25 |
| KR900013473U (en) | 1990-07-05 |