JPH0287682A - Semiconductor radiation detector and manufacture thereof - Google Patents
Semiconductor radiation detector and manufacture thereofInfo
- Publication number
- JPH0287682A JPH0287682A JP63240108A JP24010888A JPH0287682A JP H0287682 A JPH0287682 A JP H0287682A JP 63240108 A JP63240108 A JP 63240108A JP 24010888 A JP24010888 A JP 24010888A JP H0287682 A JPH0287682 A JP H0287682A
- Authority
- JP
- Japan
- Prior art keywords
- film
- single crystal
- crystal substrate
- radiation detector
- hydrogenated amorphous
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005855 radiation Effects 0.000 title claims abstract description 17
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 16
- 239000004065 semiconductor Substances 0.000 title claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 35
- 239000013078 crystal Substances 0.000 claims abstract description 24
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 22
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 16
- 238000000034 method Methods 0.000 claims abstract description 13
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910000077 silane Inorganic materials 0.000 claims abstract description 8
- 238000007599 discharging Methods 0.000 claims description 2
- 239000007789 gas Substances 0.000 abstract description 19
- 239000001257 hydrogen Substances 0.000 abstract description 6
- 229910052739 hydrogen Inorganic materials 0.000 abstract description 6
- 150000002500 ions Chemical class 0.000 abstract description 5
- 239000000463 material Substances 0.000 abstract description 3
- 239000002075 main ingredient Substances 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 230000007547 defect Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- BYDQGSVXQDOSJJ-UHFFFAOYSA-N [Ge].[Au] Chemical compound [Ge].[Au] BYDQGSVXQDOSJJ-UHFFFAOYSA-N 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 229910000927 Ge alloy Inorganic materials 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- LXQXZNRPTYVCNG-UHFFFAOYSA-N americium atom Chemical compound [Am] LXQXZNRPTYVCNG-UHFFFAOYSA-N 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010790 dilution Methods 0.000 description 2
- 239000012895 dilution Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 229910052695 Americium Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は特にＧａＡｓ単結晶基板を用いた半導体放射線
検出器に関する。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention particularly relates to a semiconductor radiation detector using a GaAs single crystal substrate.
従来の技術
従来、ＧａＡｓ単結晶基板を用いた半導体放射線検出器
は特開昭８１−１５２０８３号公報に示されているよう
に、第３図のような構造になっている。2. Description of the Related Art Conventionally, a semiconductor radiation detector using a GaAs single crystal substrate has a structure as shown in FIG. 3, as shown in Japanese Patent Application Laid-open No. 81-152083.
すなわちＧａＡｓ単結晶基板２１上にアンドープＧａＡ
ｓＪｆｆ１２２をエピタキシャル成長して、その上に金
電極１３を形成し、ＧａＡｓ単結晶基板２１のもう一方
の面には金−ゲルマニウム電極２４を形成した構造にな
っている。That is, undoped GaA is formed on the GaAs single crystal substrate 21.
The structure is such that sJff 122 is epitaxially grown, a gold electrode 13 is formed thereon, and a gold-germanium electrode 24 is formed on the other surface of the GaAs single crystal substrate 21.
アンドープＧａＡｓ層２２のエピタキシャル成長はアル
シンとトリメチルガリウムとを用いた何機金属熱分解法
（ＭＯＣＶＤ）で行っている。そのときのＧａＡｓ単結
晶基板２１の加熱温度は８００℃であった。The epitaxial growth of the undoped GaAs layer 22 is performed by MOCVD using arsine and trimethyl gallium. The heating temperature of the GaAs single crystal substrate 21 at that time was 800°C.
発明が解決しようとする課題
しかしながら、従来の構造では基板温度が６００°Ｃ程
度以上ないと良質なアンドープＧａＡｓｆｆ２２のエピ
タキシャル成長ができない。そのため高純度高抵抗で低
欠陥の単結晶基板が要求される半導体放射線検出器では
ＧａＡｓ単結晶基板２１の加熱によるＡｓの蒸発や熱ス
トレスによる欠陥の増大等が特性に大きな影響をあたえ
る。また、その接合界面での界面準位密度の低いものが
得にくい。よって、従来ＧａＡｓ単結晶基板を用いた半
導体放射線検出器は、その欠陥等により各々の放射線の
エネルギー分解能（ＦＷＨＭ）が十分にとれないことが
課題であった。また、エネルギー分解能の少し良いもの
でも、それを再現性良く得るのは困難で、歩留の高い製
造ができない。さらに、良質なエピタキシャル成長を行
うには、その成長条件の制御が複雑になり量産には適し
ていない。Problems to be Solved by the Invention However, in the conventional structure, good quality undoped GaAsff22 cannot be epitaxially grown unless the substrate temperature is about 600° C. or higher. Therefore, in semiconductor radiation detectors that require a single crystal substrate with high purity, high resistance, and low defects, evaporation of As due to heating of the GaAs single crystal substrate 21 and increase in defects due to thermal stress have a large influence on the characteristics. Furthermore, it is difficult to obtain a material with a low density of interface states at the junction interface. Therefore, a conventional semiconductor radiation detector using a GaAs single crystal substrate has a problem in that it cannot obtain sufficient energy resolution (FWHM) of each radiation due to its defects and the like. Furthermore, even if the energy resolution is slightly better, it is difficult to obtain it with good reproducibility, and high yield production cannot be achieved. Furthermore, in order to achieve high-quality epitaxial growth, controlling the growth conditions is complicated, making it unsuitable for mass production.
本発明は、この様な課題を解決することを目的としてい
る。The present invention aims to solve such problems.
課題を解決するための手段
上記課題を解決するために、Ｇ ａ Ａ ｓ単結晶基板
上にＳｉを主成分とする水素化非晶質Ｓｉ膜を形成して
ヘテロ接合を設ける。その製造はＳｌを含む原料ガスを
用いた放電（ＥＣＲＣＶＤ法等）で行う。Means for Solving the Problems In order to solve the above problems, a hydrogenated amorphous Si film containing Si as a main component is formed on a GaAs single crystal substrate to provide a heterojunction. Its production is performed by electric discharge (ECRCVD method, etc.) using a raw material gas containing Sl.
作用
上記した手段を用いることによって生ずる本発明の作用
は次のようなものである。水素化非晶質Ｓｉ膜は非晶質
であり、水素が単結晶基板との未結合手を終端するので
界面準位の少ないヘテロ接合を形成する。また、その水
素はＧａＡｓ単結晶基板中の欠陥も補償する機能がある
。そして水素化非晶質Ｓｉ膜はＳｉを含む原料ガス（例
えばシラン）の放電により４００°Ｃ以下の低い温度で
容易に製造でき量産に適している。特にＥＣＲＣＶＤ法
ではプラズマ中の高エネルギーイオンによるダメージも
少なく、高活性な放電なので基板温度も２００ ’Ｃ以
下の低温で特性の良い水素化非晶質Ｓｉ膜が形成できる
のでＧａＡｓ単結晶基板の結晶性を損なうことはない。Effects The effects of the present invention produced by using the above-mentioned means are as follows. The hydrogenated amorphous Si film is amorphous, and hydrogen terminates dangling bonds with the single crystal substrate, forming a heterojunction with few interface states. Furthermore, the hydrogen has the function of compensating for defects in the GaAs single crystal substrate. The hydrogenated amorphous Si film can be easily manufactured at a low temperature of 400° C. or less by discharging a source gas containing Si (for example, silane) and is suitable for mass production. In particular, in the ECRCVD method, there is less damage caused by high-energy ions in the plasma, and since the discharge is highly active, a hydrogenated amorphous Si film with good properties can be formed at a substrate temperature of 200'C or less, making it possible to crystallize GaAs single crystal substrates. It doesn't compromise your sexuality.
また、ＥＣＲＣＶＤ法でシランガスのみを用いることに
より余分な水素ラジカルやイオンによる基板へのダメー
ジも軽減できる。Furthermore, by using only silane gas in the ECRCVD method, damage to the substrate caused by excess hydrogen radicals and ions can be reduced.
実施例
以下、本発明の第一の実施例について、その断面構成図
を第１図に示して説明する。実験には比抵抗１０ＭΩ・
ｃｍ程度、面方位（１００）、厚さ５００μｍで直径２
インチのＬＥＣ法によるＩｎドープのＧａＡｓ単結晶基
板１を用いた。その転移密度は１０００／ａｍ２以下で
あった。その製造工程は以下の通りである。EXAMPLE Hereinafter, a first example of the present invention will be described with reference to FIG. 1, which shows a cross-sectional configuration diagram thereof. For the experiment, a resistivity of 10MΩ・
cm, surface orientation (100), thickness 500 μm, diameter 2
An In-doped GaAs single crystal substrate 1 manufactured by the LEC method was used. Its dislocation density was less than 1000/am2. The manufacturing process is as follows.
硫［のエツチング液でバッファエッチし、純水洗浄し、
十分乾燥させたＧａＡｓ単結晶基板１上に容量結合形プ
ラズマＣＶＤ装置で、ＳｉＨ４ガスとＣＨ，ガスとを用
い、そのガス混合比を７＝３として基板温度２００〜３
００ ’Ｃで水素化非晶質Ｓｉ膜としての非晶質ＳｉＣ
膜２を２００ｎｍ堆積した。ガス圧力は０．５Ｔｏｏｒ
、 高周波電力はＩＷ／ｃｍ２以下（１３，５６ＭＨ
ｚ）で行った。Buffer etch with sulfuric etchant, wash with pure water,
A sufficiently dried GaAs single crystal substrate 1 is coated with a capacitively coupled plasma CVD apparatus using SiH4 gas and CH gas, with a gas mixture ratio of 7=3, and a substrate temperature of 200 to 3.
Amorphous SiC as hydrogenated amorphous Si film at 00'C
Film 2 was deposited to a thickness of 200 nm. Gas pressure is 0.5Toor
, the high frequency power is less than IW/cm2 (13,56MH
I went with z).
前記非晶質ＳｉＣ膜２の上にＡｌ？Ｉ！極３を蒸着によ
り膜厚４００ｎｍ堆積した後、５ｍｍ間隔て３ｍｍ角に
パターニングして形成した。また、ＧａＡｓ単結晶基板
１のもう一方の裏面へのコンタクトは金−ゲルマニュウ
ム合金電極４で行った。それはスパッタリングにより膜
厚約５００ｎｍ堆積した後、前記ＡＩ？Ｉ！極３と対応
するところに、同、様にして５ｍｍ間隔で３ｍｍ角にパ
ターニングして形成した。そしてＮＮ２雰囲気中、２０
０〜３００°Ｃで３０分間のアニールを行った後、５ｍ
ｍ角にＧａＡｓ単結晶基板１を前記金属電極３．４に沿
って切断した。Al? on the amorphous SiC film 2? I! The poles 3 were deposited to a thickness of 400 nm by vapor deposition, and then patterned into 3 mm squares with 5 mm intervals. Further, contact to the other back surface of the GaAs single crystal substrate 1 was made using a gold-germanium alloy electrode 4. After depositing the film to a thickness of about 500 nm by sputtering, the AI? I! In the same manner, a pattern of 3 mm square was formed at 5 mm intervals at a location corresponding to pole 3. And in the NN2 atmosphere, 20
After annealing for 30 minutes at 0-300°C, 5 m
GaAs single crystal substrate 1 was cut into m square pieces along the metal electrodes 3.4.
最後に、図に示さなかったが、金ａ電極３．４とリード
線とを銀ペイストで接続し、樹脂で検出器の全体を封じ
た。その結果、アメリシウム（２４１Ａｍ）のエネルギ
ー５．４９ＭｅＶのα線を室温で検出した場合、従来で
はエネルギー分解能が３０〜数百ＫｅＶあったのが、２
０〜３０ＫｅＶと向上した。また、そのバラツキも小さ
く、再現性が高（、歩留の良い半導体放射線検出器の製
造が容易にできるようになった。Finally, although not shown in the figure, the gold a electrode 3.4 and the lead wire were connected with silver paste, and the entire detector was sealed with resin. As a result, when detecting α-rays of americium (241 Am) with an energy of 5.49 MeV at room temperature, the energy resolution was 2.
It improved to 0-30KeV. In addition, the variation is small, the reproducibility is high, and it has become easy to manufacture semiconductor radiation detectors with high yields.
次に、第２の実施例について第１の実施例と同じ記号と
断面構成図を用いて説明する。第２の実施例は第１の実
施例での水素化非晶質Ｓｉ膜の形成を容量結合形プラズ
マＣＶＤ装置の替わりにＥＣＲＣＶＤ装置で行ったもの
で、他の製造工程は同じである。そこで、まずＥＣＲＣ
ＶＤ装置の構成を第２図に示して説明し、次に水素化非
晶質Ｓｉ膜の形成工程だけについて述べる。プラズマ室
１１でマイクロ波電源１２（２，４５ＧＨｚ）より供給
されるマイクロ波と電磁コイル１３により印加された８
７５ガウスの磁界とにより、導入された原料ガス１４の
放電をガス圧力２Ｘ１０Ｆ−５〜５Ｘ１０Ｅ−３Ｔｏｏ
ｒで行う。そして、電磁コイル１３の発散磁界により
イオンをプラズマ室１１から堆積室１５に数十ｅＶの加
速エネルギーで導き出し、基板ホーシダー１６上に置か
れた基板に膜の堆積を行う構成である。ＧａＡｓ単結晶
基板１上への水素化非晶質Ｓｉ膜の形成は原料ガスに水
素希釈率を変えたシランガスのみを用いて膜厚２００ｎ
ｍ行った。マイクロ波パワーは５Ｏ−２００Ｗ１ ガス
圧力は約１０ Ｅ−４Ｔｏ ｏ ｒ１基板温度は２００
°Ｃ以下で・あった。Next, a second embodiment will be described using the same symbols and cross-sectional configuration diagrams as those of the first embodiment. In the second example, the hydrogenated amorphous Si film of the first example was formed using an ECRCVD apparatus instead of the capacitively coupled plasma CVD apparatus, and the other manufacturing steps are the same. Therefore, first, ECRC
The configuration of the VD device will be explained with reference to FIG. 2, and then only the process of forming the hydrogenated amorphous Si film will be described. Microwaves supplied from a microwave power source 12 (2.45 GHz) and 8 applied by an electromagnetic coil 13 in a plasma chamber 11
The discharge of the introduced raw material gas 14 is caused by a magnetic field of 75 Gauss at a gas pressure of 2X10F-5 to 5X10E-3Too.
Do it with r. Then, ions are guided from the plasma chamber 11 to the deposition chamber 15 with an acceleration energy of several tens of eV by the divergent magnetic field of the electromagnetic coil 13, and a film is deposited on the substrate placed on the substrate holder 16. The hydrogenated amorphous Si film was formed on the GaAs single crystal substrate 1 using only silane gas with a different hydrogen dilution ratio as the raw material gas, and the film thickness was 200 nm.
I went m. Microwave power is 5O-200W1 Gas pressure is approximately 10 E-4Toor1 substrate temperature is 200
It was below °C.
その結果、水素希釈をしないで１００％のシランガスの
みで水素化非晶質Ｓｉ膜の形成を行った場合がリーク電
流が最小で、エネルギー分解能も２０〜２５ＫｅＶと第
１の実施例よりも向上した半導体放射線検出器が得られ
た。As a result, when a hydrogenated amorphous Si film was formed using only 100% silane gas without hydrogen dilution, the leakage current was the smallest and the energy resolution was 20 to 25 KeV, which was improved compared to the first example. A semiconductor radiation detector was obtained.
発明の効果 本発明の効果は次のようなものである。Effect of the invention The effects of the present invention are as follows.
ＧａＡｓ単結晶基板上にＳｉを主成分とする水素化非晶
質Ｓｉ膜を形成してヘテロ接合を設けた構造にすること
により、従来よりも低温で製造でき、接合特性が良く、
エネルギー分解能の高い半導体放射線検出器が得られた
。また、その製造も再現性、歩留も良く容易にできるよ
うになった。By forming a hydrogenated amorphous Si film mainly composed of Si on a GaAs single crystal substrate to create a structure with a heterojunction, it can be manufactured at a lower temperature than conventional methods, has better junction characteristics,
A semiconductor radiation detector with high energy resolution was obtained. In addition, its manufacture has become easier with good reproducibility and yield.
第２の実施例で示したように水素化非晶質Ｓｉ膜の形成
にＥＣＲＣＶＤ法を用いると従来の高周波放電によるＣ
ＶＤ法よりも低い基板温度にすることができた。特に原
料ガスに１００％のシランガスのみを用いた場合、エネ
ルギー分解能が最も良い半導体放射線検出器が得られた
。As shown in the second example, when the ECRCVD method is used to form a hydrogenated amorphous Si film, C
It was possible to lower the substrate temperature than with the VD method. In particular, when only 100% silane gas was used as the raw material gas, a semiconductor radiation detector with the best energy resolution was obtained.
第１図は本発明の半導体放射線検出器の第１の実施例の
断面構成図、第２図は本発明の製造に用いるＥＣＲＣＶ
Ｄ装置の構成図、第３図は従来の半導体放射線検出器の
断面構成図である。
１・・・ＧａＡｓ単結晶基板、２・・・非晶質ＳｉＣ膜
、３・・・ＡＩ電極、４・・・金−ゲルマニウム合金電
極、 １１・・・プラズマ室、 １２・・・マイクロ波
電源、１３・・・電磁コイル、１４・・・原料ガス、１
５・・・堆積室、１６・・・基板ホールダー代理人の氏
名 弁理士 粟野重孝 はか１８第 １ 図
第
図
／ｚマイクロ俊電諒
原淫切゛ス
第
図
２．９FIG. 1 is a sectional configuration diagram of a first embodiment of the semiconductor radiation detector of the present invention, and FIG. 2 is an ECRCV used for manufacturing the present invention.
FIG. 3 is a cross-sectional diagram of a conventional semiconductor radiation detector. DESCRIPTION OF SYMBOLS 1... GaAs single crystal substrate, 2... Amorphous SiC film, 3... AI electrode, 4... Gold-germanium alloy electrode, 11... Plasma chamber, 12... Microwave power source , 13... Electromagnetic coil, 14... Source gas, 1
5...Deposition chamber, 16...Name of substrate holder agent Patent attorney Shigetaka Awano Haka18 Figure 1 Figure/Z Micro Shunden Ryohara Inkirisu Figure 2.9
Claims (4)
化非晶質Ｓｉ膜を形成してヘテロ接合を設けたことを特
徴とする半導体放射線検出器。(1) A semiconductor radiation detector characterized in that a hydrogenated amorphous Si film containing Si as a main component is formed on a GaAs single crystal substrate to provide a heterojunction.
化非晶質Ｓｉ膜を少なくともＳｉを含む原料ガスの放電
により堆積してヘテロ接合を形成したことを特徴とする
半導体放射線検出器の製造方法。(2) A semiconductor radiation detector characterized in that a hydrogenated amorphous Si film containing Si as a main component is deposited on a GaAs single crystal substrate by discharging a source gas containing at least Si to form a heterojunction. Production method.
ロトロン共鳴（ＥＣＲ）により発生させることを特徴と
する特許請求の範囲第２項記載の半導体放射線検出器の
製造方法。(3) The method for manufacturing a semiconductor radiation detector according to claim 2, characterized in that the discharge is generated by electron cyclotron resonance (ECR) by applying microwaves and a magnetic field.
であることを特徴とする特許請求の範囲第２項記載の半
導体放射線検出器の製造方法。(4) The method for manufacturing a semiconductor radiation detector according to claim 2, wherein the source gas containing at least Si is only silane gas.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63240108A JPH0287682A (en) | 1988-09-26 | 1988-09-26 | Semiconductor radiation detector and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63240108A JPH0287682A (en) | 1988-09-26 | 1988-09-26 | Semiconductor radiation detector and manufacture thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0287682A true JPH0287682A (en) | 1990-03-28 |
Family
ID=17054609
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63240108A Pending JPH0287682A (en) | 1988-09-26 | 1988-09-26 | Semiconductor radiation detector and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0287682A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04208575A (en) * | 1990-12-03 | 1992-07-30 | Matsushita Electric Ind Co Ltd | Hetero junction diode and radiation detector using the same |
-
1988
- 1988-09-26 JP JP63240108A patent/JPH0287682A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04208575A (en) * | 1990-12-03 | 1992-07-30 | Matsushita Electric Ind Co Ltd | Hetero junction diode and radiation detector using the same |
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