JPH0286129U - - Google Patents
Info
- Publication number
- JPH0286129U JPH0286129U JP1988166162U JP16616288U JPH0286129U JP H0286129 U JPH0286129 U JP H0286129U JP 1988166162 U JP1988166162 U JP 1988166162U JP 16616288 U JP16616288 U JP 16616288U JP H0286129 U JPH0286129 U JP H0286129U
- Authority
- JP
- Japan
- Prior art keywords
- wiring
- wedge
- shaped
- shaped constriction
- insulating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229920002379 silicone rubber Polymers 0.000 claims description 2
- 239000004945 silicone rubber Substances 0.000 claims description 2
- 239000000758 substrate Substances 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 claims 2
- 239000011248 coating agent Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
Landscapes
- Bipolar Transistors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Semiconductor Integrated Circuits (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
Description
第１図はこの考案の実施例に係るパワートラン
ジスタの製造途中の状態を表す平面図、第２図は
同パワートランジスタの第１図におけるＡ−Ａ部
分の縦断面図、第３図は同パワートランジスタの
第１図におけるＢ−Ｂ部分の縦断面図である。
１……ｎ＋型基板、２……ｎ型エピキタシヤル
層、６……絶縁膜、７……Ａｌ電極膜、７ｂ……
ベース電極、７ｅ……エミツタ電極、７ｇ……Ａ
ｌ配線、７ｈ……エミツタボンデイングパツド、
７ｆ……Ａｌ配線の楔状括れ部（ヒユーズ部）、
８……パツシベーシヨン膜、９……シリコーンゴ
ム、１０……ボンデイングワイヤ。
Fig. 1 is a plan view showing a state in the process of manufacturing a power transistor according to an embodiment of this invention, Fig. 2 is a longitudinal cross-sectional view of the power transistor taken along the line A-A in Fig. 1, and Fig. 3 is a plan view of the same power transistor. FIG. 2 is a longitudinal cross-sectional view of the transistor taken along the line BB in FIG. 1; DESCRIPTION OF SYMBOLS 1...n + type substrate, 2...n type epitaxial layer, 6...insulating film, 7...Al electrode film, 7b...
Base electrode, 7e... Emitter electrode, 7g...A
l wiring, 7h... emituta bonding pad,
7f...Wedge-shaped constricted part (fuse part) of Al wiring,
8... Passivation film, 9... Silicone rubber, 10... Bonding wire.
Claims (1)
域にコンタクトさせたＡｌ配線を半導体基板の絶
縁膜上に形成するとともに、このＡｌ配線に楔状
の括れ部を形成し、少なくとも前記楔状括れ部の
上部にシリコーンゴムを被覆することによつて、
前記Ａｌ配線の楔状括れ部を過電流保護ヒユーズ
として用いることを特徴とする半導体装置。 An Al wiring with one end used as a bonding pad and the other end in contact with a specific area is formed on the insulating film of the semiconductor substrate, and a wedge-shaped constriction is formed in this Al wiring, and at least the upper part of the wedge-shaped constriction is formed. By coating with silicone rubber,
A semiconductor device characterized in that the wedge-shaped constricted portion of the Al wiring is used as an overcurrent protection fuse.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1988166162U JPH0286129U (en) | 1988-12-21 | 1988-12-21 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1988166162U JPH0286129U (en) | 1988-12-21 | 1988-12-21 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0286129U true JPH0286129U (en) | 1990-07-09 |
Family
ID=31453304
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1988166162U Pending JPH0286129U (en) | 1988-12-21 | 1988-12-21 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0286129U (en) |
-
1988
- 1988-12-21 JP JP1988166162U patent/JPH0286129U/ja active Pending