JPH0285728A - Infrared detecting device - Google Patents
Infrared detecting deviceInfo
- Publication number
- JPH0285728A JPH0285728A JP63237422A JP23742288A JPH0285728A JP H0285728 A JPH0285728 A JP H0285728A JP 63237422 A JP63237422 A JP 63237422A JP 23742288 A JP23742288 A JP 23742288A JP H0285728 A JPH0285728 A JP H0285728A
- Authority
- JP
- Japan
- Prior art keywords
- infrared
- infrared detection
- detection element
- liquid nitrogen
- superconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000001816 cooling Methods 0.000 claims abstract description 10
- 238000001514 detection method Methods 0.000 claims description 52
- 239000004020 conductor Substances 0.000 claims 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract description 33
- 239000004065 semiconductor Substances 0.000 abstract description 21
- 239000002887 superconductor Substances 0.000 abstract description 18
- 239000007788 liquid Substances 0.000 abstract description 16
- 229910052757 nitrogen Inorganic materials 0.000 abstract description 15
- 238000010586 diagram Methods 0.000 description 4
- 238000009835 boiling Methods 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 239000000110 cooling liquid Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000005751 Copper oxide Substances 0.000 description 1
- 241000270666 Testudines Species 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 229910000431 copper oxide Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/06—Arrangements for eliminating effects of disturbing radiation; Arrangements for compensating changes in sensitivity
- G01J5/061—Arrangements for eliminating effects of disturbing radiation; Arrangements for compensating changes in sensitivity by controlling the temperature of the apparatus or parts thereof, e.g. using cooling means or thermostats
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Radiation Pyrometers (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は被測定物体が放射する赤外線を検出する赤外線
検出装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an infrared detection device that detects infrared rays emitted by an object to be measured.
本発明は被測定物体が放射する赤外線を検出する赤外線
検出装置に関し、冷却装置内に配設された赤外線検出素
子により被測定物が放射する赤外線を検出するようにし
た赤外線検出装置に於いて。The present invention relates to an infrared detection device for detecting infrared rays emitted by an object to be measured, and in an infrared detection device configured to detect infrared rays emitted by the object to be measured using an infrared detection element disposed within a cooling device.
冷却装置内の赤外線検出素子に直列に超伝導体を接続す
ることにより、赤外線検出素子の熱による破損を簡単な
構成で確実に防止する様にしたものである。By connecting a superconductor in series with the infrared detection element in the cooling device, damage to the infrared detection element due to heat can be reliably prevented with a simple configuration.
従来から被測定物体例えば、人体等から放射する赤外線
を検出する赤外１ｍ検出装置として第４図に示す如きも
のが提案されている。この第４図に、 於いて、冷却
装置（以下フライ」スタットと記す）は真′！２室＋１
１を有し、この真空室（１）により有底円筒形の容器（
２１を形成する。この真空室（１）により形成された容
器（２）はマホーピンと同様に構成されたものである。2. Description of the Related Art Conventionally, an infrared 1m detection device as shown in FIG. 4 has been proposed for detecting infrared rays emitted from an object to be measured, such as a human body. In this Figure 4, the cooling device (hereinafter referred to as "fly" stat) is true! 2 rooms + 1
1, and this vacuum chamber (1) creates a bottomed cylindrical container (
21 is formed. The container (2) formed by this vacuum chamber (1) is constructed similarly to the Mahopin.
この真空室（１）により形成された容器（２）内に冷却
液例えば沸点が一１９６℃の液体窒素（３）を注入する
。この真空室（１）の液体室３Ａ＋３）に接触している
内側９！（ｌａ）の所定位置を囲む如く前方に絞りを構
成する赤外線通過孔（４ａ）を有する、例えば銅板より
成るコールドシールド室（４）を設け、こ、 のコー
ルドシールド室（４）内の液体窒素（３）と接触する内
側壁（ｌａ）に例えばホトコンダクティブタイプの半導
体赤外線検出素子（５）を接置固定する。この場合この
半導体赤外線検出素子り５）は液体窒素（３）と接触す
る内側壁（１ａ）に接着されると共にコールドシールド
室（４）内に配されているので、この半導体赤外線検出
素子（５）の温度はこの液体窒素（３）の湧点、例えば
−１９６℃と略同じ温度となり、この半導体赤外線検出
素子（５）自体及びその近辺より赤外線は殆んど放射さ
れず、この半導体赤外線検出素子（５）はその周辺より
の赤外線の照射は殆んどなくそれだけ雑言の影響が少な
くなる。このホトコンダクティブタイプの半導体赤外線
検出素子（５）は照射される赤外線の檄に応じて抵抗値
が小さくなるもので、例えば第５図に示す如く定電流回
路（６）よりスイッチ（７）を介して、この半導体赤外
線検出素子（５）に一定電流を流しておき、この半導体
赤外線検出素子（５）の両端間に得られる電圧をプリア
ンプ（９）を介して出力端子（１０）に導出して検出し
、これにより赤外線の址、即ち温度を検出する様にする
。この＠５図に於いて、（８）は直流電圧が供給される
電源端子である。この様な電源端子（８）と出力端子（
１０）は真空室（Ｌ）の外側壁（ｌｂ）に配設したシー
ル端子（１１） 、 （１２）に接続されている。A cooling liquid, for example liquid nitrogen (3) having a boiling point of 1196° C., is injected into the container (2) formed by the vacuum chamber (1). The inside 9 that is in contact with the liquid chamber 3A+3) of this vacuum chamber (1)! A cold shield chamber (4) made of, for example, a copper plate is provided, which has an infrared passing hole (4a) constituting an aperture in the front so as to surround a predetermined position of (la), and the liquid nitrogen in this cold shield chamber (4) is provided. For example, a photoconductive type semiconductor infrared detecting element (5) is placed and fixed on the inner wall (la) in contact with (3). In this case, this semiconductor infrared detection element (5) is glued to the inner wall (1a) that contacts the liquid nitrogen (3) and is placed in the cold shield chamber (4). ) is approximately the same temperature as the spring point of this liquid nitrogen (3), for example -196°C, and almost no infrared rays are emitted from this semiconductor infrared detection element (5) itself or its vicinity, and this semiconductor infrared detection element (5) The element (5) is hardly irradiated with infrared rays from its surroundings, and the influence of noise is accordingly reduced. This photoconductive type semiconductor infrared detection element (5) has a resistance value that decreases according to the intensity of the infrared rays irradiated.For example, as shown in Fig. 5, it is Then, a constant current is caused to flow through this semiconductor infrared detection element (5), and the voltage obtained across this semiconductor infrared detection element (5) is derived to the output terminal (10) via the preamplifier (9). This detects the temperature of the infrared rays. In this diagram @5, (8) is a power supply terminal to which DC voltage is supplied. This kind of power terminal (8) and output terminal (
10) are connected to seal terminals (11) and (12) arranged on the outer wall (lb) of the vacuum chamber (L).
シール端子（１１） 、 （１２）はハーメチック端
子の如きもので真空室（１）内を真空に保ったまま電気
信号を入出力させることが出来る。The sealed terminals (11) and (12) are like hermetic terminals, and can input and output electrical signals while maintaining the vacuum inside the vacuum chamber (1).
更に従来の赤外線検出装置ではバイアス電流を流して使
用するがこの周囲温度が十分に冷却されていないと自己
過熱で破ｔｉする。この様な破損を防止するために赤外
線検出素子（５）の近傍に温度センサ（１３）を設け、
赤外線検出素子近傍の冷却温度を検出し、その検出信号
が所定値以上になるとシール端子（１５） 、 （１
６）から取り出し°ζバイアス電流制御回路（１４）を
通してスイッチ（７）を“オフ”させて赤外線検出素子
にバイアス電流を流さない様にしていた。Furthermore, conventional infrared detection devices use a bias current, but if the ambient temperature is not sufficiently cooled, they will self-overheat and fail. In order to prevent such damage, a temperature sensor (13) is provided near the infrared detection element (5),
The cooling temperature near the infrared detection element is detected, and when the detection signal exceeds a predetermined value, the sealed terminals (15), (1
The switch (7) was turned off through the bias current control circuit (14) to prevent bias current from flowing through the infrared detection element.
クライオスタンドを構成する容器（２）のコールドシー
ルド室（４）の赤外線通過孔（４８）に対向するこの真
空室＋１）の外側壁（１ｂ）に赤外線ウィンド（２０）
を設ける。この赤外線ウィンド（２０）は略赤外線だけ
を通過するゲルマニウム仮により構成する。An infrared window (20) is installed on the outer wall (1b) of this vacuum chamber (+1) facing the infrared passing hole (48) of the cold shield chamber (4) of the container (2) constituting the cryostand.
will be established. This infrared window (20) is made of germanium material that passes approximately only infrared rays.
斯る従来の赤外線検出装置に於いて測定物体（１７）の
温度分布を検出するときは真空室（１１の外と測定物体
（１’？）との間に配された水平及び垂直操作用のミラ
ーより成る検出点操作糸（１８）及びレンズ系（１９）
を介して得られる検出点の赤外線を赤外線ウィンド（２
０） 、赤外線通過孔（４ａ）を通して半導体赤外線検
出素子（５）に照射する如くして行っていた。In such a conventional infrared detection device, when detecting the temperature distribution of the measuring object (17), a horizontal and vertical operating chamber is placed between the outside of the vacuum chamber (11) and the measuring object (1'?). Detection point operation string (18) consisting of a mirror and lens system (19)
The infrared rays of the detection point obtained through the infrared window (2
0), the semiconductor infrared detecting element (5) was irradiated with the infrared rays through the infrared passing hole (4a).
断る従来の赤外線検出装置に於いては赤外線検出素子（
５）の価格はかなり高価なために温度センサ（１３）や
バイアス電流制御回路（１４）を用いて赤外線検出素子
（５）の破損防止を行なっているが、定′ｆＪｉ流回路
（６）と赤外線検出素子（５）間には周囲温度上昇時に
バイアス電流を流すことを停止させるためのスイッチ（
７）を設けなければならないだけでなく、クライオスタ
ンドの真空室（１）内に温度センサ（１３）を設けたり
、バイアス電流制御回路（１４）を設けなければならず
、もしこのバイアス電流制御回路（１４）が誤動作する
と赤外線検出素子（５）は破損してしまう問題があった
。In conventional infrared detection devices, the infrared detection element (
5) is quite expensive, so a temperature sensor (13) and a bias current control circuit (14) are used to prevent damage to the infrared detection element (5), but the constant 'fJi current circuit (6) and Between the infrared detection elements (5) is a switch (
7), it is also necessary to install a temperature sensor (13) in the vacuum chamber (1) of the cryostand and a bias current control circuit (14), and if this bias current control circuit There is a problem in that if (14) malfunctions, the infrared detection element (5) will be damaged.
本発明ば斯る点に麺み簡単な構成で確実にこの赤外線検
出素子の破損を防止できるようにした赤外線検出装置を
得ることを目的とするものである。SUMMARY OF THE INVENTION In view of this, it is an object of the present invention to provide an infrared detecting device which has a simple structure and can reliably prevent damage to the infrared detecting element.
本考案の赤外線検出装置は例えば第１図及び第２図に示
す如く、冷却装置内に配設された赤外線検出素子（５）
により被測定物体（１７）よりの赤外線を検出するよう
にした赤外線検出装置回路に於いて、冷却装置内の赤外
線検出素子（５）に直列に超伝導体（２１）を接続した
ものである。The infrared detecting device of the present invention has an infrared detecting element (5) disposed in a cooling device, as shown in FIGS. 1 and 2, for example.
In an infrared detection device circuit designed to detect infrared rays from an object to be measured (17), a superconductor (21) is connected in series to an infrared detection element (5) in a cooling device.
本発明によればクライオスタンド内の超伝導体（２１）
によって周囲温度が上昇すれば直ちに抵抗値は上宵して
バイアス電流が赤外線検出素子（５）に流れるのを阻止
して赤外線検出素子の破損を防止し得る。According to the invention, a superconductor (21) in a cryostand
As soon as the ambient temperature rises, the resistance value increases to prevent the bias current from flowing to the infrared detection element (5), thereby preventing damage to the infrared detection element.
以下第１図乃第２図を参照しながら本発明赤外線検出装
置の一実施例につき説明しよう、この第１図及び第２図
に於いてＭ４図及び第５図に対応する部分には同一符号
を付し、その詳ｍ説明は雀゛略する。Hereinafter, one embodiment of the infrared detection device of the present invention will be explained with reference to FIGS. 1 and 2. In FIGS. 1 and 2, parts corresponding to FIGS. , and the detailed explanation will be omitted.
本例に於いても第４図と同様にクライオスタンドは第２
図示の様に真空室１１）により有底円筒形の′８器（２
）を形成する。この場合容ｉ （２１はマホービンと同
様に構成されたものである。この真空室（１）により形
成された容器（２）内に冷却液例えば沸点が一１９６℃
の液体窒素（３）を注入する。この真空室（１）の液体
窒素（３）に接触している内側壁（１ａ）の所定位置、
本例では内側壁（１ａ）の下方に前方に絞りを構成する
赤外線通過孔（４ａ）を有する例えば銅板より成るコー
ルドシールド室（４）を設け、このコールドシールド室
（４）内の液体窒素（３）と接触する内側壁（１ａ）に
例えばホトコンダクティブタイプの半導体赤外線検出素
子（５）と超伝導体よりなる超伝導体線（２１）を接着
固定し、半導体赤外線検出素子＋５）と超伝導体線（２
１）とを直列に接続し、その両端子をシール端子（２２
） 、 （２３）に接続する様に成されている。In this example, as in Figure 4, the cryo stand is in the second position.
As shown in the figure, a bottomed cylindrical vessel (2) is formed by a vacuum chamber (11).
) to form. In this case, the container i (21 is constructed in the same manner as the Mahobin).In the container (2) formed by this vacuum chamber (1), there is a coolant with a boiling point of, for example, 1196°C.
Inject liquid nitrogen (3). a predetermined position of the inner wall (1a) in contact with the liquid nitrogen (3) of this vacuum chamber (1);
In this example, a cold shield chamber (4) made of, for example, a copper plate is provided below the inner wall (1a) and has an infrared ray passage hole (4a) constituting an aperture in the front, and the liquid nitrogen (4) in this cold shield chamber (4) is provided. For example, a photoconductive type semiconductor infrared detection element (5) and a superconductor wire (21) made of a superconductor are adhesively fixed to the inner wall (1a) in contact with the semiconductor infrared detection element +5) and the superconductor. Body line (2
1) in series, and both terminals are sealed terminals (22
), (23).
この場合この半導体赤外線検出素子（５）及び超伝導体
線（２１）は液体窒素（３）と接触している内側壁（１
ａ）に接着されると共にコールドシールド室（４）内に
配されているので、この半導体赤外線検出素子（５）の
温度はこの液体窒素（３）の沸点例えば−１９６℃と略
同し温度となり、この半導体赤外線検出素子（５）自体
及びその近辺より赤外線は殆んど放射されず、この半導
体赤外線検出素子（５）はその周辺よりの赤外線の照射
は殆んどなくそれだけ雑音の影響が少なくなる。In this case, the semiconductor infrared detection element (5) and the superconductor wire (21) are connected to the inner wall (1) in contact with the liquid nitrogen (3).
a) and placed in the cold shield chamber (4), the temperature of this semiconductor infrared detection element (5) is approximately the same as the boiling point of liquid nitrogen (3), for example -196°C. Almost no infrared rays are emitted from this semiconductor infrared detection element (5) itself or its vicinity, and this semiconductor infrared detection element (5) is hardly irradiated with infrared rays from its surroundings, so that the influence of noise is reduced accordingly. Become.
このコールドシールド室（４）の赤外ｉＭ通過Ｔ１．
（４ａ）に対向するこの真空室（１１の外側壁（１ｂ）
に略赤外線だけを通過するゲルマニウム板により構成し
た赤外線ウィンド（２０）を設ける二
＋Ｗ３ （１９ａ ）はゲルマニウムより成る集光レン
ズである。Infrared iM passing through this cold shield chamber (4) T1.
The outer wall (1b) of this vacuum chamber (11) opposite (4a)
2+W3 (19a) is a condensing lens made of germanium, which is provided with an infrared window (20) made of a germanium plate that passes only infrared rays.
叙上の赤外ｉＭ検出装置の構成を第１図に示す。The configuration of the above-mentioned infrared iM detection device is shown in FIG.
第４図の様にバイアス切換スイッチ（７）と温度センサ
（１３）並にバイアス電流制御回路（１４）は設けられ
ず、亀＃端子（８）から定電流回路（６）を通じて供給
された電流はシール端子（２２）から超伝導体線（２１
）に供給され、半導体赤外線検出素子（５）を通してシ
ール端子（２３）に出力される。超伝導体線（２１）と
してはイソトリウム−バリウム−銅酸化物からなるＹＢ
ａｚ Ｃｕｘ ＯＴ等の層状ペロブスカイト構成の酸化
物系超伝導体を用い得る。ＹＢａ２Ｃｕ３０〒のＹをＮ
ｄの一部で置換したもの、Ｂａの一部をＳｔで置換した
もの、Ｏの一部をＦ又はＳで置換したもの等で構成して
もよい。ＹＢａ２ＣＬＩ３０７による超伝導体線によれ
ば伝導転移温度Ｔｃは液体窒素の大気圧下で７７．３°
Ｋに比べて第３図に示す様に９２°に程度で抵抗値は略
無限大に近い１０’Ωｃｍ程度から１０−”Ωｃｏｗに
変化して抵抗値は零となる。As shown in Figure 4, the bias selector switch (7), temperature sensor (13), and bias current control circuit (14) are not provided, and the current is supplied from the turtle # terminal (8) through the constant current circuit (6). is from the sealed terminal (22) to the superconductor wire (21
) and output to the seal terminal (23) through the semiconductor infrared detection element (5). The superconductor wire (21) is YB made of isotrium-barium-copper oxide.
An oxide-based superconductor having a layered perovskite structure such as az Cux OT can be used. YBa2Cu30〒Y is N
It may also be constructed by replacing a part of d with St, a part of Ba with St, a part of O with F or S, etc. According to the superconductor wire made by YBa2CLI307, the conduction transition temperature Tc is 77.3° under atmospheric pressure in liquid nitrogen.
As shown in FIG. 3, the resistance value changes from about 10'Ωcm, which is close to infinity, to 10-''Ωcow, and becomes zero at about 92° as shown in FIG.
依って本例の半導体赤外線検出素子（５）が液体窒素（
３）で冷却された状態であれば超伝導体線（２１）の抵
抗値は零であり定電流回路（６〉からの電流は半導体赤
外線検出素子（５）にバイアス電流を流すが、液体窒素
（３）が容Ｗ（２１内から蒸発したり、或は液体窒素を
入れ忘れたりした場合には超伝導体線（２１）は高抵抗
値を示ｊ″ため定電流回路り６）からのバイアス電流は
カットされるので半導体赤外線素子（５）は確実に保護
され破…することは全（ない。Therefore, the semiconductor infrared detection element (5) of this example is made of liquid nitrogen (
If it is cooled in step 3), the resistance value of the superconductor wire (21) is zero, and the current from the constant current circuit (6>) flows through the semiconductor infrared detection element (5) as a bias current. If (3) evaporates from inside W (21) or if you forget to add liquid nitrogen, the superconductor wire (21) exhibits a high resistance value, so the bias from the constant current circuit (6) Since the current is cut off, the semiconductor infrared element (5) is reliably protected and will not be damaged.
即ち、本例構成によれば半導体赤外線検出素子に直列に
超伝導体線を接続するだけの簡単な構成となり、従来の
様にバイアス切換スイッチ（７）や温度センサ（Ｉ３）
並にバイアス電流制御回・路（１４）を必要とせず、ま
た真空室（１）からの電流を入出力するためのシール端
子の数も減少させることが出来る。That is, according to the configuration of this example, it is a simple configuration in which the superconductor wire is connected in series to the semiconductor infrared detection element, and the bias changeover switch (7) and temperature sensor (I3) are connected as in the conventional case.
Furthermore, a bias current control circuit (14) is not required, and the number of sealed terminals for inputting and outputting current from the vacuum chamber (1) can also be reduced.
向、本発明は上述の実施例に限定されることなく、本発
明の要旨を逸説しない範囲で種々の変形が可能であるこ
とは勿論である。However, it goes without saying that the present invention is not limited to the above-described embodiments, and that various modifications can be made without departing from the gist of the present invention.
本発明によれば赤外線検出素子の俵用を、簡単な構成で
確実に防止することができる利益がある。According to the present invention, there is an advantage that it is possible to reliably prevent the infrared detection element from being used as a bale with a simple configuration.
第１図は本発明の赤外線検出装置の一実ｈｂ例を示す回
路図、第２図は本発明の赤外線検出装置の一実施例を示
す断面図、第３図は超伝導体線の抵抗−温度特性図、第
４図は従来の赤外線［＊小装置の例を示す断面図、第５
図は赤外線検出装置の説明に供する接続図である。
＋１１は真空電、（ｌａ）は内側壁、（ｌｂ）は外側壁
、（２）は容器、（３）は冷却液、（４）はコールドシ
ールド室、（５）は半導体赤外線検出素子、（■０）は
赤外線ウィンド、（２１）は超伝導体線である。FIG. 1 is a circuit diagram showing an example of an infrared detection device according to the present invention, FIG. 2 is a sectional view showing an embodiment of the infrared detection device according to the present invention, and FIG. 3 is a resistance diagram of a superconductor wire. Temperature characteristic diagram, Figure 4 is a conventional infrared ray [*Cross-sectional view showing an example of a small device, Figure 5
The figure is a connection diagram for explaining the infrared detection device. +11 is the vacuum electric, (la) is the inner wall, (lb) is the outer wall, (2) is the container, (3) is the cooling liquid, (4) is the cold shield chamber, (5) is the semiconductor infrared detection element, ( (2) 0) is an infrared wind, and (21) is a superconductor wire.
Claims (1)
体が放射する赤外線を検出するようにした赤外線検出装
置に於いて、 上記冷却装置内の赤外線検出素子に直列に超伝導体を接
続したことを特徴とする赤外線検出装置。[Claims] In an infrared detection device configured to detect infrared rays emitted by an object to be measured using an infrared detection element disposed in a cooling device, an infrared detection device arranged in series with the infrared detection device in the cooling device includes An infrared detection device characterized by connecting conductors.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63237422A JP2750354B2 (en) | 1988-09-21 | 1988-09-21 | Infrared detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63237422A JP2750354B2 (en) | 1988-09-21 | 1988-09-21 | Infrared detector |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0285728A true JPH0285728A (en) | 1990-03-27 |
| JP2750354B2 JP2750354B2 (en) | 1998-05-13 |
Family
ID=17015124
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63237422A Expired - Lifetime JP2750354B2 (en) | 1988-09-21 | 1988-09-21 | Infrared detector |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2750354B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4607300B2 (en) * | 2000-08-30 | 2011-01-05 | 日置電機株式会社 | Cooling device and light detection device |
| CN105043558A (en) * | 2015-06-06 | 2015-11-11 | 中国科学院云南天文台 | Shielding method and apparatus for infrared radiation measurement of high-reflection surface |
-
1988
- 1988-09-21 JP JP63237422A patent/JP2750354B2/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4607300B2 (en) * | 2000-08-30 | 2011-01-05 | 日置電機株式会社 | Cooling device and light detection device |
| CN105043558A (en) * | 2015-06-06 | 2015-11-11 | 中国科学院云南天文台 | Shielding method and apparatus for infrared radiation measurement of high-reflection surface |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2750354B2 (en) | 1998-05-13 |
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