JPH028158U - - Google Patents
Info
- Publication number
- JPH028158U JPH028158U JP8593088U JP8593088U JPH028158U JP H028158 U JPH028158 U JP H028158U JP 8593088 U JP8593088 U JP 8593088U JP 8593088 U JP8593088 U JP 8593088U JP H028158 U JPH028158 U JP H028158U
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- emitting diode
- package
- housed
- diode element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010586 diagram Methods 0.000 description 4
Description
第１図は本考案に係る発光ダイオードの一実施
例を示す回路図、第２図は本考案の応用例を説明
する要部回路図、第３図は従来の発光ダイオード
に制限抵抗や駆動回路を接続した状態を示す回路
図である。
１，１１，１３，１５……発光ダイオード、３
……回路素子（駆動回路）、５……電源端子、７
……接地端子、９……入力端子、Ｄ……発光ダイ
オード素子、Ｐ１，Ｐ２，Ｐ３，Ｐ４……パツケ
ージ、Ｒ１……回路素子（制限抵抗）、Ｒ２，Ｒ
３……バイアス抵抗、Ｔｒ……トランジスタ。
Fig. 1 is a circuit diagram showing an embodiment of a light emitting diode according to the present invention, Fig. 2 is a main circuit diagram explaining an application example of the present invention, and Fig. 3 is a circuit diagram of a conventional light emitting diode including a limiting resistor and a driving circuit. FIG. 2 is a circuit diagram showing a state in which the 1, 11, 13, 15... Light emitting diode, 3
...Circuit element (drive circuit), 5...Power terminal, 7
...Ground terminal, 9...Input terminal, D...Light emitting diode element, P1 , P2 , P3 , P4 ...Package, R1 ...Circuit element (limiting resistance), R2 , R
3 ...Bias resistor, Tr...transistor.
Claims (1)
前記規格電圧よりも低い定格電圧にて発光動作す
る発光ダイオード素子がパツケージ内に収納され
てなり、 前記発光ダイオード素子を発光動作させる回路
素子が、前記発光ダイオード素子に直列接続する
ようにして前記パツケージ内に収納されてなるこ
とを特徴とする発光ダイオード。 (2) 前記回路素子が、トランジスタおよびこの
トランジスタのバイアス抵抗からなる前記発光ダ
イオード素子の発光駆動回路、もしくは前記規格
電圧と前記定格電圧との電位差を生ずる制限抵抗
であり、前記駆動回路もしくは前記制限抵抗の少
なくともいずれか一方が前記パツケージ内に収納
されてなる請求項１記載の発光ダイオード。[Claims for Utility Model Registration] (1) A light emitting diode element that is connected to a predetermined standard voltage power source and operates to emit light at a rated voltage lower than the standard voltage is housed in a package, the light emitting diode element A light emitting diode, characterized in that a circuit element for operating the light emitting diode is housed in the package so as to be connected in series with the light emitting diode element. (2) The circuit element is a light emitting drive circuit for the light emitting diode element consisting of a transistor and a bias resistor for the transistor, or a limiting resistor that generates a potential difference between the standard voltage and the rated voltage, and the drive circuit or the limiting resistor The light emitting diode according to claim 1, wherein at least one of the resistors is housed within the package.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8593088U JPH028158U (en) | 1988-06-30 | 1988-06-30 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8593088U JPH028158U (en) | 1988-06-30 | 1988-06-30 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH028158U true JPH028158U (en) | 1990-01-19 |
Family
ID=31310582
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8593088U Pending JPH028158U (en) | 1988-06-30 | 1988-06-30 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH028158U (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6041062B2 (en) * | 1979-07-19 | 1985-09-13 | ヘミツシエ・ウエルケ・ヒユ−ルス・アクチエンゲゼルシヤフト | Method for producing isophorone diisocyanate adduct containing free NCO group and terminal NCO group blocked with ε-caprolactam |
-
1988
- 1988-06-30 JP JP8593088U patent/JPH028158U/ja active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6041062B2 (en) * | 1979-07-19 | 1985-09-13 | ヘミツシエ・ウエルケ・ヒユ−ルス・アクチエンゲゼルシヤフト | Method for producing isophorone diisocyanate adduct containing free NCO group and terminal NCO group blocked with ε-caprolactam |
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