JPH028055U - - Google Patents

Info

Publication number
JPH028055U
JPH028055U JP8299388U JP8299388U JPH028055U JP H028055 U JPH028055 U JP H028055U JP 8299388 U JP8299388 U JP 8299388U JP 8299388 U JP8299388 U JP 8299388U JP H028055 U JPH028055 U JP H028055U
Authority
JP
Japan
Prior art keywords
thin film
electrode
film transistor
sensor
capacitor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8299388U
Other languages
English (en)
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP8299388U priority Critical patent/JPH028055U/ja
Publication of JPH028055U publication Critical patent/JPH028055U/ja
Pending legal-status Critical Current

Links

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
JP8299388U 1988-06-24 1988-06-24 Pending JPH028055U (es)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8299388U JPH028055U (es) 1988-06-24 1988-06-24

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8299388U JPH028055U (es) 1988-06-24 1988-06-24

Publications (1)

Publication Number Publication Date
JPH028055U true JPH028055U (es) 1990-01-18

Family

ID=31307727

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8299388U Pending JPH028055U (es) 1988-06-24 1988-06-24

Country Status (1)

Country Link
JP (1) JPH028055U (es)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02246272A (ja) * 1989-03-20 1990-10-02 Hitachi Ltd 二次元ホトセンサアレイ
JPH05110049A (ja) * 1991-10-21 1993-04-30 Nec Corp 赤外線固体撮像素子及びその製造方法
US7211880B2 (en) 2002-08-30 2007-05-01 Sharp Kabushiki Kaisha Photoelectric conversion apparatus and manufacturing method of same
JP2008153427A (ja) * 2006-12-18 2008-07-03 Hitachi Displays Ltd 高感度光センサ素子及びそれを用いた光センサ装置
US7462863B2 (en) 2002-07-11 2008-12-09 Sharp Kabushiki Kaisha Thin film phototransistor, active matrix substrate using the phototransistor, and image scanning device using the substrate

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02246272A (ja) * 1989-03-20 1990-10-02 Hitachi Ltd 二次元ホトセンサアレイ
JPH05110049A (ja) * 1991-10-21 1993-04-30 Nec Corp 赤外線固体撮像素子及びその製造方法
US7462863B2 (en) 2002-07-11 2008-12-09 Sharp Kabushiki Kaisha Thin film phototransistor, active matrix substrate using the phototransistor, and image scanning device using the substrate
US7211880B2 (en) 2002-08-30 2007-05-01 Sharp Kabushiki Kaisha Photoelectric conversion apparatus and manufacturing method of same
JP2008153427A (ja) * 2006-12-18 2008-07-03 Hitachi Displays Ltd 高感度光センサ素子及びそれを用いた光センサ装置

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