JPH0279044A - Surface treatment method for substrate - Google Patents
Surface treatment method for substrateInfo
- Publication number
- JPH0279044A JPH0279044A JP23121988A JP23121988A JPH0279044A JP H0279044 A JPH0279044 A JP H0279044A JP 23121988 A JP23121988 A JP 23121988A JP 23121988 A JP23121988 A JP 23121988A JP H0279044 A JPH0279044 A JP H0279044A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- solution
- tank
- treatment
- silane
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 81
- 238000004381 surface treatment Methods 0.000 title claims abstract description 15
- 238000000034 method Methods 0.000 title claims description 27
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims abstract description 33
- 239000006087 Silane Coupling Agent Substances 0.000 claims abstract description 14
- 239000011521 glass Substances 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 239000002904 solvent Substances 0.000 claims description 5
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 claims description 4
- 239000008096 xylene Substances 0.000 claims description 4
- 238000007654 immersion Methods 0.000 claims description 3
- SVONRAPFKPVNKG-UHFFFAOYSA-N 2-ethoxyethyl acetate Chemical compound CCOCCOC(C)=O SVONRAPFKPVNKG-UHFFFAOYSA-N 0.000 claims description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract description 28
- 229910000077 silane Inorganic materials 0.000 abstract description 28
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 10
- 230000006866 deterioration Effects 0.000 abstract description 5
- 238000001035 drying Methods 0.000 abstract description 5
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 abstract 4
- 239000000853 adhesive Substances 0.000 abstract 2
- 230000001070 adhesive effect Effects 0.000 abstract 2
- 238000012545 processing Methods 0.000 description 16
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 15
- 239000007788 liquid Substances 0.000 description 10
- 238000004140 cleaning Methods 0.000 description 7
- 239000011248 coating agent Substances 0.000 description 7
- 238000000576 coating method Methods 0.000 description 7
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 6
- 238000003860 storage Methods 0.000 description 6
- 101100165186 Caenorhabditis elegans bath-34 gene Proteins 0.000 description 5
- 239000012298 atmosphere Substances 0.000 description 5
- 238000001816 cooling Methods 0.000 description 5
- 239000003795 chemical substances by application Substances 0.000 description 4
- 239000003599 detergent Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 235000012431 wafers Nutrition 0.000 description 4
- 239000000498 cooling water Substances 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 238000005323 electroforming Methods 0.000 description 3
- 230000002209 hydrophobic effect Effects 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 238000009835 boiling Methods 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000005192 partition Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000005046 Chlorosilane Substances 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000007605 air drying Methods 0.000 description 1
- 150000001343 alkyl silanes Chemical class 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000013040 bath agent Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- KOPOQZFJUQMUML-UHFFFAOYSA-N chlorosilane Chemical compound Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000003504 photosensitizing agent Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Landscapes
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Laminated Bodies (AREA)
- Surface Treatment Of Glass (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は基板の表面処理方法で、例えば半導体集積回路
製造、におけるシリコンウェハーやコンパクトディスク
、レーザーディスク等のマスタリングに使用されるガラ
ス盤の表面処理方法に関するものである。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a method for surface treatment of a substrate, for example, the surface treatment of a glass disk used for mastering silicon wafers, compact disks, laser disks, etc. in semiconductor integrated circuit manufacturing. This relates to a processing method.
半導体集積回路（ＬＳＩ）の製造においては、例えばシ
リコンウェハーに感光剤であるホトレジストを塗布し、
マスクを用いて露光、現像、エツチングを行ってパター
ニングし回路を形成する。In the manufacture of semiconductor integrated circuits (LSI), for example, a silicon wafer is coated with photoresist, which is a photosensitizer.
A mask is used to perform exposure, development, and etching to pattern and form a circuit.
また、コンパクトディスク、レーザーディスク等のマス
タリングにおいては表面を研磨、洗浄したガラス盤にホ
トレジストを塗布し、信号で変調したレーザー光で記録
露光、現像して信号ビットを形成する。さらに導電性処
理を行ってニッケル電鋳を施して金属マスターを作り、
この電鋳を繰返してスタンパ−を製造する。In addition, in mastering compact discs, laser discs, etc., a photoresist is applied to a glass disc whose surface has been polished and cleaned, and signal bits are formed by recording exposure and development with a laser beam modulated by a signal. Furthermore, conductive treatment is performed and nickel electroforming is applied to create a metal master.
This electroforming process is repeated to produce a stamper.
上述のようなシリコンウェハーやガラス盤等の基板に直
接ホトレジストを塗布した場合、基板とホトレジスト膜
の接着力が弱く、現像やエツチングそして電鋳の工程で
しばしば基板とホトレジスト膜の剥離が生じた。そのた
め一般に基板とホトレジスト膜の接着を良くする目的で
、シランカップリング剤による基板表面処理（特公昭４
７−２６０４３）が行われている。When photoresist is applied directly to a substrate such as a silicon wafer or glass disk as described above, the adhesion between the substrate and the photoresist film is weak, and peeling of the photoresist film from the substrate often occurs during the development, etching, and electroforming processes. Therefore, in order to improve the adhesion between the substrate and the photoresist film, the substrate surface is generally treated with a silane coupling agent (Special Publication No. 4).
7-26043) is being carried out.
このシランカップリング剤による処理方法としては、第
６図に示すスピンナーにより回転塗布を行う方法や第７
図に示す減圧容器の中でシラン力・７プリング剤の蒸気
浴処理を行う方法等がある。Treatment methods using this silane coupling agent include a spin coating method using a spinner as shown in FIG.
There is a method of carrying out a steam bath treatment using a silane force/7 pulling agent in a reduced pressure container as shown in the figure.
まず第６図に示すスピンナーによる方法を説明する。筺
体ｌは仕切板２によって上、下の部屋に分かれている。First, a method using a spinner shown in FIG. 6 will be explained. The housing l is divided into upper and lower rooms by a partition plate 2.
上部の部屋は塗布室３で、仕切板２の略中央部の孔４よ
りモータ５の回転軸６が突出し、該回転軸６に回転台７
が取り付けられ、その上に基板８を！！置している。モ
ータ５は下部の部屋９にあって、筺体ｌに固定している
。塗布室３には回転台７の中心部から外周まで回転する
塗布アームＩＯがあって、該塗布アーム１０の先端にノ
ズル１）を配設し、筺体１の外部より塗布アームｌＯに
接続する管１２でシランカップリング剤を含有する溶液
を供給し、ノズル１）より基板８に滴下する。The upper room is a coating chamber 3, in which a rotating shaft 6 of a motor 5 protrudes from a hole 4 in the approximate center of the partition plate 2, and a rotary table 7 is connected to the rotating shaft 6.
is attached, and board 8 is placed on top of it! ! It is location. The motor 5 is located in a lower chamber 9 and is fixed to the housing l. The coating chamber 3 has a coating arm IO that rotates from the center to the outer periphery of the rotary table 7. A nozzle 1) is disposed at the tip of the coating arm 10, and a pipe is connected to the coating arm IO from the outside of the housing 1. At step 12, a solution containing a silane coupling agent is supplied and dripped onto the substrate 8 from the nozzle 1).
以上のような構成におけるスピンナーはモータ５を駆動
して回転台７を回転させ、ノズル１）より基板８に溶液
を滴下して、基板上に溶液を塗り広げる。そして、回転
台７の回転速度と溶液の粘度によって一定の塗布膜を形
成しながら自然乾燥し・、シラン処理を行う。The spinner configured as described above drives the motor 5 to rotate the rotary table 7, drops the solution onto the substrate 8 from the nozzle 1), and spreads the solution over the substrate. Then, a certain coating film is formed depending on the rotational speed of the rotary table 7 and the viscosity of the solution, and air drying is performed, followed by silane treatment.
また他の処理方法として、第７図に示す蒸気浴処理方法
がある。図において、真空タンク１３は金網１４によっ
て部屋を上下に分けている。下部の部屋には、シランカ
ップリング剤を含有する溶液を入れた容器１５が台１６
に載置している。そして容器１５の底面部をヒータ１７
によって加熱し、溶液を蒸発しやすくしている。真空タ
ンク１３の上部の部屋には複数の基板８を載置する棚１
８があって、基板８どうしが接触しないように間隔を有
して載置している。そして真空タンクエ３の側面より、
接続管１９を介して真空ポンプ２０と接続し、真空タン
ク１３内を減圧できるようになっている。Further, as another treatment method, there is a steam bath treatment method shown in FIG. In the figure, the vacuum tank 13 is divided into upper and lower chambers by a wire mesh 14. In the lower room, a container 15 containing a solution containing a silane coupling agent is placed on a stand 16.
It is listed on. Then, the bottom part of the container 15 is heated by a heater 17.
This heats the solution to make it easier to evaporate. In the upper room of the vacuum tank 13, there is a shelf 1 on which a plurality of substrates 8 are placed.
8, and the substrates 8 are placed at intervals so that they do not come into contact with each other. And from the side of vacuum tank 3,
It is connected to a vacuum pump 20 via a connecting pipe 19 so that the pressure inside the vacuum tank 13 can be reduced.
このような装置において、真空タンク１３内を減圧し、
さらにシランカップリング剤を含有する溶液をヒータ１
７によって加熱することによって、タンク内を溶液の蒸
気で充満させることができる。In such a device, the pressure inside the vacuum tank 13 is reduced,
Furthermore, a solution containing a silane coupling agent is applied to heater 1.
7, the tank can be filled with solution vapor.
このことによって棚１８に載置した基板８を蒸気浴する
ことができ、シラン処理が行える。As a result, the substrate 8 placed on the shelf 18 can be subjected to a steam bath and silane treatment can be performed.
これらの方法に用いるシランカップリング剤としては、
有機クロロシラン、アルキルシラン、ヘキサメチルジシ
ラザン等がある。例えばヘキサメチルジシラザンについ
て、その作用効果を述べると、下記−数式に示すように
、ガラス表面（ａ）のＯＨ基とへキサメチルジシラザン
（ｂ）が反応してシロキサン結合となり、表面にメチル
基−ＣＨｚ （Ｃ）が生ずるため疎水性となり、ホト
レジストとの接着が強固なものとなる。Silane coupling agents used in these methods include:
Examples include organic chlorosilane, alkylsilane, and hexamethyldisilazane. For example, to describe the effects of hexamethyldisilazane, as shown in the following formula, the OH groups on the glass surface (a) and hexamethyldisilazane (b) react to form siloxane bonds, and the methyl Since the group -CHz (C) is generated, it becomes hydrophobic and the adhesion with the photoresist becomes strong.
（ａ） （ｂ）
（ｃ）
〔発明が解決しようとする課題〕
しかしながらスピンナーによる塗布では処理後の基板表
面にしばしば微小異物の付着が見られることがある。こ
れは顕微鏡観察の結果、微小水滴であることが判明した
。これらの発生原因としては、基板処理後の乾燥の段階
でシランカップリング剤の溶剤が蒸発する時の気化熱の
ために基板が冷却され、基板周辺の大気中の水分が凝縮
して基板表面に付着するものと考えられる。(a) (b) (c) [Problems to be Solved by the Invention] However, when coating with a spinner, minute foreign matter is often observed to adhere to the substrate surface after treatment. As a result of microscopic observation, this was found to be minute water droplets. The cause of these occurrences is that the substrate is cooled due to the heat of vaporization when the solvent of the silane coupling agent evaporates during the drying stage after substrate processing, and moisture in the atmosphere around the substrate condenses and forms on the substrate surface. It is thought that it will stick.
また、減圧容器中でのシランカフプリング剤蒸気浴処理
の場合は、基板表面を均一に処理することが難しく、安
定性に欠ける。この原因は明らかでないが、処理後減圧
容器に大気を導入した時基板表面に吸着している未反応
のシランカップリング剤が大気中の水分と反応して悪影
響を及ぼすものと考えられる。Furthermore, in the case of silane cuff pulling agent vapor bath treatment in a reduced pressure container, it is difficult to uniformly treat the substrate surface, resulting in lack of stability. The cause of this is not clear, but it is thought that when air is introduced into the reduced pressure container after processing, unreacted silane coupling agent adsorbed on the substrate surface reacts with moisture in the air, causing an adverse effect.
そのため本発明による手段としては、シランカップリン
グ剤を含有する溶液に浸漬し、浸漬後基板の表面が乾燥
する前にフレオンまたはイソプロピルアルコールの蒸気
浴によって、基板の表面処理を行うことを特徴としたも
のである。そして上述の基板としては、シリコンウェハ
ーやガラス盤を用い、また上述のシランカフプリング剤
を含有する溶液の溶剤としては、キシレンやセロソルブ
アセテートまたは、イソプロピルアルコールとしたもの
である。Therefore, the means according to the present invention is characterized in that the substrate is immersed in a solution containing a silane coupling agent, and after the immersion and before the surface of the substrate is dried, the surface of the substrate is treated with a Freon or isopropyl alcohol vapor bath. It is something. A silicon wafer or a glass disk is used as the substrate, and xylene, cellosolve acetate, or isopropyl alcohol is used as the solvent for the solution containing the silane cuff pulling agent.
したがって本発明によれば、基板をシランカップリング
剤溶液中に浸漬することにより、基板表面は前記−数式
に示した反応によるシラン処理が行われている。次に基
板を溶液から引上げ、基板表面が溶液にぬれた状態のま
ま、フレオンやイソプロピルアルコールの蒸気浴に入れ
ると、フレオンやイソプロピルアルコールの蒸気が基板
表面で凝縮して液体となって基板表面上を流れ落ち、基
板表面のシランカフブリング剤溶液を洗い流す。Therefore, according to the present invention, by immersing the substrate in a silane coupling agent solution, the surface of the substrate is subjected to silane treatment by the reaction shown in the above formula. Next, the substrate is lifted from the solution and placed in a Freon or isopropyl alcohol vapor bath while the substrate surface remains wet with the solution.The Freon or isopropyl alcohol vapor condenses on the substrate surface and becomes a liquid, forming a liquid on the substrate surface. Flow down to wash away the silane cuff bringing agent solution from the substrate surface.
と同時に基板の温度が上昇し、周囲の蒸気の温度と等し
くなり基板表面の乾燥が行われるものである。At the same time, the temperature of the substrate rises and becomes equal to the temperature of the surrounding steam, drying the surface of the substrate.
第１図、第２図に本発明による基板の表面処理方法を実
施するための処理槽や蒸気浴槽の詳細図を示し構成を説
明する。FIGS. 1 and 2 show detailed views of a processing tank and a steam bath for implementing the substrate surface treatment method according to the present invention, and the construction thereof will be explained.
第１図はシラン処理を行うためのシラン処理槽２１を示
す。図においてシラン処理槽２１は、処理タンク２２と
貯蔵タンク２３を有し、連結パイプ２４と供給ポンプ２
５やフィルター２６をもつ供給パイプ２７で構成されて
いる。FIG. 1 shows a silane treatment tank 21 for performing silane treatment. In the figure, the silane treatment tank 21 includes a treatment tank 22 and a storage tank 23, a connecting pipe 24, and a supply pump 2.
5 and a supply pipe 27 with a filter 26.
処理タンク２２はその内部に溶液槽２８があって、その
底部には、前記供給バイブ２７や超音波振動子２９を配
設している。また処理タンク２２の上部には、大気中の
水分が槽内に入るのを防ぐため、乾燥した空気によるエ
アーカーテンを形成するための空気流入口３０及び整流
板３１がある。The processing tank 22 has a solution tank 28 inside thereof, and the supply vibrator 27 and the ultrasonic vibrator 29 are arranged at the bottom thereof. Further, in the upper part of the processing tank 22, there are an air inlet 30 and a rectifying plate 31 for forming an air curtain of dry air to prevent moisture from the atmosphere from entering the tank.
そしてその整流板３１の下部に、溶液の蒸発飛散を防止
するための冷却水による冷却装置３２を配設している。A cooling device 32 using cooling water is disposed below the current plate 31 to prevent the solution from evaporating and scattering.
また貯蔵タンク２３にも溶液を冷却するための冷却水に
よる冷却装置３３を有している。The storage tank 23 also has a cooling device 33 using cooling water for cooling the solution.
このような構成のシラン処理槽２１において、貯蔵タン
ク２３内の溶液は温度調整され、供給ポンプ２５によっ
てフィルター２６を通過し供給バイブ２７を通って溶液
槽２８に供給される。そして溢れた溶液は、処理タンク
２２の底部に接続された連結パイプ２４を通って貯蔵タ
ンク２３に流入する。流入した溶液は、再度フィルター
２６を通過して循環している。In the silane treatment tank 21 having such a configuration, the temperature of the solution in the storage tank 23 is adjusted, and the solution is supplied by the supply pump 25 to the solution tank 28 through the filter 26 and the supply vibrator 27 . The overflowing solution then flows into the storage tank 23 through the connecting pipe 24 connected to the bottom of the processing tank 22 . The inflowing solution passes through the filter 26 again and is being circulated.
続いて蒸気浴槽について説明する。Next, the steam bath will be explained.
第２図はフレオンを用いた蒸気浴槽３４の構成を示す。FIG. 2 shows the construction of a steam bath 34 using Freon.
貯蔵タンク３５から供給ポンプ３６．フィルター３７を
通過して処理槽３８の底部の溶液槽３９に供給バイブ４
０が連結し、フレオン液が供給されている。前記溶液槽
３９に供給されたフレオン液は、溢れ出て処理槽３８の
底部に連結されたパイプ４１に導かれて水洗器４２に入
る。また処理槽３８の上部には、冷却水による冷却装置
４Ｓがあって、この冷却装置４３によって蒸発している
フレオンが冷却凝縮し液化する。液化したフレオン液は
冷却装置下部にある補間に集められ、パイプ４４を通っ
て水洗器４２に入る。また処理基板を処理槽３８に挿入
したときにも、フレオン蒸気が凝縮液化し流下するが、
それらも溶液槽３９の上方にある桶４５に集められ、パ
イプ４６を遣って水洗器４２に入る。水洗器４２は、底
部近くに設けられた純水供給口４７からフレオン液中に
純水を放出し、フレオン液中の水溶性物質を取り込みな
がら水洗器４２の上部排水パイプ４８より純水を排出す
る。From the storage tank 35 to the supply pump 36. The vibrator 4 passes through the filter 37 and is supplied to the solution tank 39 at the bottom of the processing tank 38.
0 is connected and Freon liquid is supplied. The Freon liquid supplied to the solution tank 39 overflows and is led to a pipe 41 connected to the bottom of the processing tank 38 and enters a water washer 42 . Further, in the upper part of the processing tank 38, there is a cooling device 4S using cooling water, and the evaporated Freon is cooled and condensed by this cooling device 43 to be liquefied. The liquefied Freon liquid is collected in an interpolation at the bottom of the cooler and enters a water washer 42 through a pipe 44. Also, when a processed substrate is inserted into the processing tank 38, Freon vapor condenses and liquefies and flows down.
They are also collected in a tub 45 above the solution tank 39 and enter the washer 42 via a pipe 46. The water washer 42 discharges pure water into the Freon liquid from a pure water supply port 47 provided near the bottom, and discharges the pure water from the upper drain pipe 48 of the water washer 42 while taking in water-soluble substances from the Freon liquid. do.
このようにして不純物が除去されたフレオン液は、貯蔵
タンク３５に集められ、供給ポンプ３６によって溶液槽
３９に送り出される。そして溶液槽３９の内部にある加
熱器４９によって、フレオン液は加熱され、蒸発が促進
されて蒸気浴に適した環境を形成している。The Freon liquid from which impurities have been removed in this way is collected in a storage tank 35 and sent to a solution tank 39 by a supply pump 36. The Freon liquid is heated by a heater 49 inside the solution tank 39, promoting evaporation and creating an environment suitable for a steam bath.
向上記フレオンは、沸点が４７Ｃ°と低いので、比較的
低い温度で乾燥できる。また比熱も小さく発火性がない
ので蒸気浴剤として使いやすい長所を有している。また
前記フレオンに代えてイソプロピルアルコール（以下Ｉ
ＰＡと呼ぶ）を使ってもよい。ｒＰＡはフレオンより沸
点が高く発火性があるので取扱いは難しいが、親水性が
高いので基板表面に水分が付着していても除去できる特
徴を有している。以上のような構成の処理槽２工や蒸気
浴槽３４を用いて、まず基板を処理槽２１の処理タンク
２２に浸漬して表面処理を行う。続いて表面が溶液にぬ
れた状態のまま、蒸気浴槽３４に入れる。蒸気浴槽３４
内では、挿入した基板の表面に接するフレオン蒸気が凝
縮して液化し、基板表面を洗浄しながら流下する。この
ようにして基板表面を洗浄しながら基板は周囲の環境温
度に近づくとともに、フレオン蒸気の液化が止まり、乾
燥状態になって基板のシラン処理が終了する。The above Freon has a boiling point as low as 47°C, so it can be dried at a relatively low temperature. Furthermore, it has a small specific heat and is not flammable, so it has the advantage of being easy to use as a steam bath agent. Also, instead of the Freon, isopropyl alcohol (hereinafter referred to as I
(referred to as PA) may also be used. rPA has a higher boiling point than Freon and is flammable, so it is difficult to handle, but it is highly hydrophilic, so even if moisture adheres to the substrate surface, it can be removed. Using the two processing tanks and the steam bath 34 configured as described above, the substrate is first immersed in the processing tank 22 of the processing tank 21 to perform surface treatment. Subsequently, it is placed in a steam bath 34 while the surface remains wet with the solution. Steam bathtub 34
Inside, Freon vapor that comes into contact with the surface of the inserted substrate condenses and liquefies, flowing down while cleaning the substrate surface. While cleaning the substrate surface in this manner, the substrate approaches the ambient temperature, the Freon vapor stops liquefying, and the substrate becomes dry, completing the silane treatment of the substrate.
以上の工程によって終了した基板の表面は、処理工程中
に大気に接しないので大気中の水分による処理むらが発
生しなくなる。また処理後の基板表面は疎水性となるの
で基板表面の変質劣化を低減できる。The surface of the substrate completed through the above steps does not come into contact with the atmosphere during the processing process, so that uneven processing due to moisture in the atmosphere will not occur. Furthermore, since the substrate surface after treatment becomes hydrophobic, deterioration in quality of the substrate surface can be reduced.
尚、他の実施例として、基板の表面研磨後それらの洗浄
工程のあとに、本発明による基板の表面処理方法の工程
付加して一連の工程としてもよい。In another embodiment, after polishing the surface of the substrate and cleaning the surface of the substrate, the steps of the method for treating the surface of a substrate according to the present invention may be added to form a series of steps.
第３図には、他の一実施例を示す洗浄及び表面処理工程
の構成図を示す。図において一連の超音波洗浄処理、即
ち、洗浄槽５１．温水槽５２．純水槽５３．ＩＰＡ槽５
４．５５．５６．フレオン又はＩＰＡ蒸気槽３４を経て
洗浄乾燥した基板を、シラン処理槽２１にてシラン処理
を行い、フレオン蒸気浴槽３４で洗浄と乾燥を行う。こ
の工程ではシラン処理槽にＩＰＡが混入しないため、シ
ラン処理液の劣化が無く好ましい方法であるが、処理工
程が長くなる欠点がある。FIG. 3 shows a configuration diagram of a cleaning and surface treatment process showing another embodiment. In the figure, a series of ultrasonic cleaning processes, that is, a cleaning tank 51. Hot water tank 52. Pure water tank 53. IPA tank 5
4.55.56. A substrate that has been washed and dried in a Freon or IPA steam bath 34 is subjected to silane treatment in a silane treatment bath 21, and then cleaned and dried in a Freon steam bath 34. In this process, IPA does not mix into the silane treatment tank, so the silane treatment solution does not deteriorate, making it a preferred method, but it has the disadvantage that the treatment process becomes longer.
更に他の実施例としては、第４図に示すように研磨した
基板を洗浄槽５１で研摩剤を洗い落とし、次に温水槽５
２で洗剤を洗い流し、さらに純水槽５３で洗浄する。そ
してＩＰＡ槽５４，５５で水置換を行い、次のキシレン
槽５８でＩＰＡをキシレンと置換した後、シラン処理槽
２１で基板表面のシラン処理を行い、フレオン蒸気槽３
４で洗浄と乾燥を行う。この工程を用いればＩＰＡによ
ってシラン処理槽２１内のシラン処理液を汚染すること
がない。In yet another embodiment, as shown in FIG.
The detergent is washed away in step 2, and further washing is performed in a pure water tank 53. Then, water is replaced in the IPA tanks 54 and 55, and after replacing IPA with xylene in the next xylene tank 58, silane treatment is performed on the substrate surface in the silane treatment tank 21, and the Freon steam tank 3
Wash and dry in step 4. If this step is used, the silane treatment liquid in the silane treatment tank 21 will not be contaminated by IPA.
さらに他の実施例としては、第５図に示すように表面を
研磨した基板を洗剤槽５１で洗剤を用いて基板に付着し
ている研磨剤等の汚れを除却し、次に温水槽５２で洗剤
をすすぎ洗いを行い、次に室温の純水槽５３で洗浄する
。そして次にＩＰＡ槽４．５で水置換を行った後、シラ
ン処理槽９にて表面処理を行い、フレオン蒸気槽７で洗
浄と乾燥行う。この方法はシラン処理槽にＩＰＡが混入
しシラン処理液を劣化させる欠点はあるが、洗浄とシラ
ン処理が同時に行え簡便である。In yet another embodiment, as shown in FIG. 5, a substrate whose surface has been polished is cleaned with a detergent in a detergent bath 51 to remove dirt such as abrasives adhering to the substrate, and then in a hot water bath 52. The detergent is rinsed off and then washed in a pure water tank 53 at room temperature. Then, after water replacement is performed in the IPA tank 4.5, surface treatment is performed in the silane treatment tank 9, and cleaning and drying are performed in the Freon steam tank 7. Although this method has the disadvantage that IPA gets mixed into the silane treatment tank and deteriorates the silane treatment solution, it is convenient because cleaning and silane treatment can be performed at the same time.
以上本発明の方法で表面処理を行うことによって、極め
て清浄な処理面が得られる。またホトレジストの接着強
度も充分なものが得られる。さらに本発明の処理を行う
ことによって、基板表面が疎水性となるため、大気中の
水分による基板表面の変質、劣化を低減することができ
、経時変化の少ない良好な表面を維持することができる
。By performing the surface treatment using the method of the present invention as described above, an extremely clean treated surface can be obtained. Furthermore, sufficient adhesion strength of the photoresist can be obtained. Furthermore, by performing the treatment of the present invention, the substrate surface becomes hydrophobic, so it is possible to reduce deterioration and deterioration of the substrate surface due to moisture in the atmosphere, and it is possible to maintain a good surface with little change over time. .
第１図、第２図は本発明によるシラン処理を実施するた
めのシラン処理槽、蒸気浴槽の詳細な説明図、第３図、
第４図、第５図は他の実施例を示す概略構成図、第６図
、第７図は従来方法によるシラン処理を説明する処理装
置の説明図である。1 and 2 are detailed explanatory diagrams of a silane treatment tank and a steam bath for carrying out the silane treatment according to the present invention, and FIG.
FIGS. 4 and 5 are schematic configuration diagrams showing other embodiments, and FIGS. 6 and 7 are explanatory diagrams of a processing apparatus for explaining silane treatment by a conventional method.
Claims (6)
浸漬後基板の表面が乾燥する前にフレオンまたはイソプ
ロピルアルコールの蒸気浴によって、基板の表面処理を
行うことを特徴とする基板の表面処理方法。(1) Immersion in a solution containing a silane coupling agent,
1. A method for surface treatment of a substrate, which comprises treating the surface of the substrate in a Freon or isopropyl alcohol vapor bath before the surface of the substrate is dried after immersion.
する請求項（１）記載の基板の表面処理方法。(2) The method for surface treatment of a substrate according to claim (1), wherein the substrate is a silicon wafer.
項（１）記載の基板の表面処理方法。(3) The method for surface treatment of a substrate according to claim (1), wherein the substrate is a glass disk.
る請求項（１）記載の基板の表面処理方法。(4) The method for surface treatment of a substrate according to claim (1), wherein the solvent of the solution is xylene.
とを特徴とする請求項（１）記載の基板の表面処理方法
。(5) The method for surface treatment of a substrate according to claim (1), wherein the solvent of the solution is cellosolve acetate.
ことを特徴とする請求項（１）記載の基板の表面処理方
法。(6) The method for surface treatment of a substrate according to claim (1), wherein the solvent of the solution is isopropyl alcohol.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23121988A JPH0279044A (en) | 1988-09-14 | 1988-09-14 | Surface treatment method for substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23121988A JPH0279044A (en) | 1988-09-14 | 1988-09-14 | Surface treatment method for substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0279044A true JPH0279044A (en) | 1990-03-19 |
Family
ID=16920189
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23121988A Pending JPH0279044A (en) | 1988-09-14 | 1988-09-14 | Surface treatment method for substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0279044A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007155913A (en) * | 2005-12-01 | 2007-06-21 | Omron Corp | Method for bonding glass member for optical communication |
| JP2008035141A (en) * | 2006-07-28 | 2008-02-14 | Kyocera Kinseki Corp | Piezoelectric oscillator |
| US7719742B2 (en) | 2005-03-07 | 2010-05-18 | Samsung Electronics Co., Ltd. | MEMS device package and method of manufacturing the same |
| JP2011063760A (en) * | 2009-09-18 | 2011-03-31 | Seiko Epson Corp | Substrate joining method |
| CN104810252A (en) * | 2014-01-24 | 2015-07-29 | 中芯国际集成电路制造(上海)有限公司 | Method for applying bottom anti-reflective coating |
-
1988
- 1988-09-14 JP JP23121988A patent/JPH0279044A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7719742B2 (en) | 2005-03-07 | 2010-05-18 | Samsung Electronics Co., Ltd. | MEMS device package and method of manufacturing the same |
| JP2007155913A (en) * | 2005-12-01 | 2007-06-21 | Omron Corp | Method for bonding glass member for optical communication |
| JP2008035141A (en) * | 2006-07-28 | 2008-02-14 | Kyocera Kinseki Corp | Piezoelectric oscillator |
| JP2011063760A (en) * | 2009-09-18 | 2011-03-31 | Seiko Epson Corp | Substrate joining method |
| CN104810252A (en) * | 2014-01-24 | 2015-07-29 | 中芯国际集成电路制造(上海)有限公司 | Method for applying bottom anti-reflective coating |
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