JPH0272258A - Thin film mechanical device - Google Patents
Thin film mechanical deviceInfo
- Publication number
- JPH0272258A JPH0272258A JP21900888A JP21900888A JPH0272258A JP H0272258 A JPH0272258 A JP H0272258A JP 21900888 A JP21900888 A JP 21900888A JP 21900888 A JP21900888 A JP 21900888A JP H0272258 A JPH0272258 A JP H0272258A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- substrate
- mechanical device
- constitution body
- gear
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 100
- 239000000758 substrate Substances 0.000 claims abstract description 31
- 239000011521 glass Substances 0.000 claims abstract description 12
- 230000000694 effects Effects 0.000 claims description 4
- 230000005291 magnetic effect Effects 0.000 abstract description 7
- 230000005292 diamagnetic effect Effects 0.000 abstract description 3
- 238000013016 damping Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 description 6
- 239000010408 film Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000005299 abrasion Methods 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000005339 levitation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Landscapes
- Gears, Cams (AREA)
- Transmission Devices (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明はシリコンなどからなる薄膜をエンチング技術す
ることにより形成される歯車などからなる薄膜機械装置
に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a thin film mechanical device made of a gear or the like formed by etching a thin film made of silicon or the like.
従来の技術
近年、微細な物体を加工あるいは移動させるための一つ
の装置として、薄膜により歯車・カムなどを構成し、そ
れを組み合わせてマニュピレータなどを構成する薄膜機
械装置が研究されてきている。BACKGROUND OF THE INVENTION In recent years, as a device for processing or moving minute objects, research has been conducted into thin-film mechanical devices in which gears, cams, etc. are formed from thin films, and these are combined to form manipulators and the like.
以下図面を参照しながら従来の薄膜機械装置について説
明する。第４図は従来の薄膜機械装置の一実施例におけ
る平面図であり、第５図は第４図のＡＡ’線における断
面図である。第４図および第５図において、４はシリコ
ンからなる基板であり、１は薄膜の周囲に凹凸部を作製
することにより形成された歯車（以後、薄膜歯車と呼ぶ
、）、２は図面において左右方向に移動できるように作
製された移動体（以後、薄膜移動体と呼ぶ。）、３は薄
膜歯車４の中心軸である。なお薄膜で形成された歯車・
移動体などを以後、薄膜構成体と呼ぶ。A conventional thin film mechanical device will be described below with reference to the drawings. FIG. 4 is a plan view of an embodiment of a conventional thin film mechanical device, and FIG. 5 is a sectional view taken along line AA' in FIG. 4. In FIGS. 4 and 5, 4 is a substrate made of silicon, 1 is a gear formed by creating an uneven portion around a thin film (hereinafter referred to as a thin film gear), and 2 is a left and right gear in the drawings. A moving body (hereinafter referred to as a thin film moving body) manufactured so as to be able to move in the direction shown in FIG. In addition, gears made of thin film
Hereinafter, the moving body and the like will be referred to as a thin film structure.
第４図のような薄膜機械装置に作製方法としては、まず
シリコン基板をエツチングすることにより中心軸３など
を形成する。一方、薄膜構成体は１〜１０ＩＩｍの厚み
を有するシリコンＴｌｊ膜をエンチングすることにより
形成する。薄膜歯車の直径としでは５００μｍ以下で通
常設計される。前記薄膜構成体などを基板４に取り付け
ることにより薄膜機械装置は完成する。In order to fabricate a thin film mechanical device as shown in FIG. 4, first, a central shaft 3 and the like are formed by etching a silicon substrate. On the other hand, the thin film structure is formed by etching a silicon Tlj film having a thickness of 1 to 10 IIm. Thin film gears are usually designed to have a diameter of 500 μm or less. By attaching the thin film structure and the like to the substrate 4, the thin film mechanical device is completed.
薄膜機械装置の動作としては、圧電素子（図示せず）な
どにより発生する移動運動が薄膜移動体２に伝達され、
さらに薄膜歯車に伝達されることにより薄膜歯車が回転
運動をおこなう。As for the operation of the thin film mechanical device, moving motion generated by a piezoelectric element (not shown) or the like is transmitted to the thin film moving body 2,
Further, by being transmitted to the thin film gear, the thin film gear performs a rotational motion.
発明が解決しようとする課題
従来の薄膜機械装置では移動あるいは回転をおこなう薄
ｌＩ＊構成体と基板４との間にまさつが発生する。その
ため、薄膜構成体を動かすためには過度の力が必要とし
、またスムーズに運動させることが困難である。また基
板４はソリコンであるため、基板４のソリなどが太きく
Ｆｉ膜機械装置を構成するだけの平滑性および平面性が
得にくい、その上ソリコン基板は温度による膨張・収縮
が比較的大きく、そのため薄膜構成体の運動に影響を与
え、スムーズな回転あるいは移動運動が得にくいという
問題点があった。Problems to be Solved by the Invention In the conventional thin film mechanical device, a collision occurs between the thin lI* structure and the substrate 4 which are moving or rotating. Therefore, excessive force is required to move the thin film structure, and it is difficult to move it smoothly. In addition, since the substrate 4 is a solicon substrate, the warpage of the substrate 4 is large, making it difficult to obtain smoothness and flatness sufficient to construct an Fi film mechanical device.Moreover, the solicon substrate expands and contracts relatively largely due to temperature. Therefore, there was a problem in that it affected the movement of the thin film structure, making it difficult to obtain smooth rotation or movement.
課題を解決するための手段
上記課題を解決するため本発明の薄膜機械装置は、回転
と移動のうち少なくとも一方の運動をおこなえるように
構成された薄膜からなる薄膜構成体が、ガラス基板上に
配置されており、前記薄膜構成体の表面と裏面と内部の
うち少なくとも一箇所にマイスナー効果を有する薄膜が
形成されているものである。Means for Solving the Problems In order to solve the above problems, the thin film mechanical device of the present invention has a thin film structure made of a thin film configured to perform at least one of rotation and movement, which is disposed on a glass substrate. A thin film having a Meissner effect is formed on at least one of the front surface, back surface, and inside of the thin film structure.
作用
本発明は基板を温度による膨張・収縮が少なく、また良
好な平面性を有するガラス質の材料にて基板を形成する
。前記基板に薄膜歯車などの薄膜構成体を取り付けるこ
とにより、薄膜構成体はスムーズな運動をおこなえる。Function: According to the present invention, the substrate is formed of a glassy material that exhibits little expansion and contraction due to temperature and has good flatness. By attaching a thin film structure such as a thin film gear to the substrate, the thin film structure can move smoothly.
また薄膜構成体に反磁性効果を有する物質にて薄膜を形
成することにより、磁力により薄膜構成体を浮上させる
ことができ、基板とＦｉＪ膜構膜体成体間の摩さつを大
幅に低減させることができる。Furthermore, by forming a thin film on the thin film structure using a substance that has a diamagnetic effect, the thin film structure can be levitated by magnetic force, which greatly reduces friction between the substrate and the FiJ film structure. be able to.
実施例
以下、本発明の薄膜機械装置の一実施例について図面を
参照しながら説明する。EXAMPLE Hereinafter, an example of the thin film mechanical device of the present invention will be described with reference to the drawings.
第１図は本発明の薄膜機械装置の一実施例における断面
図である。平面図は省略しているが平面図は第４図と同
様であり、また断面箇所は第４図ＡＡ’線と同様である
。第１図において７はソーダガラス・石英ガラスなどの
ガラス質の基板である。FIG. 1 is a sectional view of an embodiment of the thin film mechanical device of the present invention. Although the plan view is omitted, the plan view is the same as that in FIG. 4, and the cross-sectional location is the same as the line AA' in FIG. In FIG. 1, 7 is a glass substrate made of soda glass, quartz glass, or the like.
なおａ記基板はガラス質以外の基板にＳｉＯ２゜ＳｉＮ
ｘなどからなる薄膜を形成したものでもよい。コストの
関係からソーダガラスを用いるのが適当である。５は薄
膜歯車、６は前記歯車上に形成されたマイスナー効果を
有する物質からなる薄膜（以後、超電導薄膜と呼ぶ）、
９は薄膜歯車５の中心軸である。本発明の薄膜機械装置
の作製方法としては、まず基板７上に５ＩＮｘ、５ｉＯ
ｚなどの無機材料あるいはＣｒ、Ｔｉ、ＡＮなどの金属
材料を蒸着し、エツチングなどにより中心軸９などを形
成する０通常基板４がソーダガラスの場合は密着性およ
びエツチングの容易性などの問題から、Ｔｉを５０００
Å以下蒸着し、その上にＡｌ２．Ｃｒなどの金属を５０
００Å以上蒸着する。Note that the substrate in a is made of SiO2゜SiN on a substrate other than glass.
A thin film formed of x or the like may also be used. In view of cost, it is appropriate to use soda glass. 5 is a thin film gear; 6 is a thin film formed on the gear and made of a substance having a Meissner effect (hereinafter referred to as a superconducting thin film);
9 is the central axis of the thin film gear 5. As a method for manufacturing the thin film mechanical device of the present invention, first, 5INx, 5iO
An inorganic material such as Z or a metal material such as Cr, Ti, AN, etc. is deposited and etched to form the central axis 9 etc. If the substrate 4 is usually soda glass, it is difficult to avoid problems such as adhesion and ease of etching. , Ti 5000
A layer of Al2. 50% of metals such as Cr
Deposit to a thickness of 00 Å or more.
さらに前記薄膜上にレジストを塗布し、バターニングお
よびエンチングにより中心軸などを形成する。一方、薄
膜歯車５などは別の基板上に前記基板とりけい性のよい
材料を蒸着し、エツチングすることにより形成する。ま
た必要に応じて、Ｙｉ；Ｂａなどを主成分とする超電導
薄膜６を前記薄膜歯車などの薄膜構成体上に形成する。Furthermore, a resist is applied on the thin film, and a central axis and the like are formed by patterning and etching. On the other hand, the thin film gear 5 and the like are formed by depositing a material with good insulating properties on another substrate and etching the material. Further, if necessary, a superconducting thin film 6 mainly composed of Yi;Ba or the like is formed on the thin film structure such as the thin film gear.
なお、薄膜歯車などの薄膜構成体の表面とは第１図にお
いて超電導ｙｉ膜６が形成された面をいい、その反対面
を裏面と呼ぶ、前述の薄膜構成体を基板７に配室するこ
とにより薄膜機械装置は作製される。Note that the surface of a thin film structure such as a thin film gear refers to the surface on which the superconducting YI film 6 is formed in FIG. 1, and the opposite surface is referred to as the back surface. A thin film mechanical device is fabricated.
以下、本発明の薄膜機械装置の動作について図面を参照
しながら説明する。第２図は本発明の薄膜機械装置の動
作を説明するための説明図である。Hereinafter, the operation of the thin film mechanical device of the present invention will be explained with reference to the drawings. FIG. 2 is an explanatory diagram for explaining the operation of the thin film mechanical device of the present invention.
第２図において８は電磁石あるいは永久磁石などの磁石
である。薄膜歯車などの薄膜構成体は表面に超電導ｍ＃
６が形成されているため、その反磁性の性質により磁石
からの磁力線に反発し、薄膜構成体は磁気浮上する。前
記磁気浮上量の大きさは磁石８の位置または磁力の大き
さを変化させることにより調整する。したがって基板７
と薄膜構成体との摩さつが生じないため、圧電素子（図
示せず）などが発生する運動を減衰することなく薄膜歯
車５の回転運動に伝達させることができる。In FIG. 2, 8 is a magnet such as an electromagnet or a permanent magnet. Thin film structures such as thin film gears have superconducting m# on the surface.
6 is formed, its diamagnetic property repels the lines of magnetic force from the magnet, and the thin film structure magnetically levitates. The magnitude of the magnetic levitation amount is adjusted by changing the position of the magnet 8 or the magnitude of the magnetic force. Therefore, the board 7
Since there is no friction between the thin film structure and the thin film structure, the motion generated by the piezoelectric element (not shown) or the like can be transmitted to the rotational motion of the thin film gear 5 without being attenuated.
なお、本発明の薄膜機械装置は基板７を平滑性および平
面性のよいガラス基板で形成しているため、摩さつが小
さい場合は超１ｉ導薄膜６の形成が必要でなく、また薄
膜機械装置を動作させる時、磁石８も必要でないことは
明らかである。Note that in the thin film mechanical device of the present invention, since the substrate 7 is formed of a glass substrate with good smoothness and flatness, it is not necessary to form the super 1i conductive thin film 6 when the abrasion is small, and the thin film mechanical device It is clear that when operating the magnet 8 is also not necessary.
また、超１を厚薄膜６の形成位置は薄膜構成体の表面に
限定するものではなく、第３図に示すように薄膜構成体
の裏面に形成してもよく、また内部に形成してもよいこ
とは明らかである。Furthermore, the position where the thick and thin film 6 is formed is not limited to the surface of the thin film structure, but may be formed on the back surface of the thin film structure as shown in FIG. 3, or may be formed inside the thin film structure. The good news is obvious.
発明の効果
本発明の薄膜機械装置は、ガラス基板上に薄膜構成体を
配置することにより構成している。前記基板は平面性が
よく温度による膨張・収縮が少なくまた摩さつ係数をも
小さく形成できるため、薄膜構成体をスムーズに移動あ
るいは回転させることができる。また前記薄膜構成体上
に超電導薄膜を形成することにより、さらに基板とＩ［
構成体との摩さつ係数は少なくなり、薄膜構成体の移動
あるいは回転状態は良好になる。またガラス基板上には
アモルファスシリコンを用いて薄膜トランジスタ素子・
太陽電池素子などを広面積に形成できるため、薄膜機械
装置と前記素子を同一基板上に形成することにより素子
の電気的エネルギーと薄膜機械装置の機械的エネルギー
のやりとりが容易になる。Effects of the Invention The thin film mechanical device of the present invention is constructed by arranging a thin film structure on a glass substrate. Since the substrate has good flatness, expands and contracts little due to temperature, and has a small friction coefficient, the thin film structure can be smoothly moved or rotated. Furthermore, by forming a superconducting thin film on the thin film structure, the substrate and I[
The friction coefficient with the structure is reduced, and the movement or rotation of the thin film structure is improved. Additionally, amorphous silicon is used on the glass substrate to create thin film transistor elements.
Since solar cell elements and the like can be formed over a wide area, forming the thin film mechanical device and the device on the same substrate facilitates the exchange of electrical energy of the device and mechanical energy of the thin film mechanical device.
第１図は本発明の薄膜機械装置の断面図、第２図は本発
明の薄膜機械装置の動作の説明図、第３図は本発明の薄
膜機械装置の他の実施例における断面図、第４図は従来
の薄膜機械装置の平面図、第５図は第４図のＡＡ’線に
おける断面図である。
１．５・・・・・・Ｆｊｌ膜歯車、２・・・・・・薄膜
移動体、３゜９・・・・・・中心軸、４．７・・・・・
・基板、６・・・・・・超電導薄膜、８・・・・・・磁
石。
代理人の氏名 弁理士 粟野重孝 はか１名搬倣シ
ーＳ−〜のFIG. 1 is a sectional view of the thin film mechanical device of the present invention, FIG. 2 is an explanatory diagram of the operation of the thin film mechanical device of the present invention, and FIG. 3 is a sectional view of another embodiment of the thin film mechanical device of the present invention. FIG. 4 is a plan view of a conventional thin film mechanical device, and FIG. 5 is a sectional view taken along line AA' in FIG. 1.5...Fjl film gear, 2...Thin film moving body, 3゜9...Central axis, 4.7...
- Substrate, 6... superconducting thin film, 8... magnet. Name of agent: Patent attorney Shigetaka Awano
Claims (2)
えるように構成された薄膜からなる薄膜構成体が、ガラ
ス基板上に配置されたことを特徴とする薄膜機械装置。(1) A thin film mechanical device characterized in that a thin film structure made of a thin film configured to perform at least one of rotation and movement is disposed on a glass substrate.
一箇所にマイスナー効果を有する薄膜が形成されている
ことを特徴とする請求項（１）記載の薄膜機械装置。(2) The thin film mechanical device according to claim (1), wherein a thin film having a Meissner effect is formed on at least one of the front surface, back surface, and inside of the thin film structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21900888A JPH0272258A (en) | 1988-09-01 | 1988-09-01 | Thin film mechanical device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21900888A JPH0272258A (en) | 1988-09-01 | 1988-09-01 | Thin film mechanical device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0272258A true JPH0272258A (en) | 1990-03-12 |
Family
ID=16728813
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21900888A Pending JPH0272258A (en) | 1988-09-01 | 1988-09-01 | Thin film mechanical device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0272258A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9875492B2 (en) | 2001-05-22 | 2018-01-23 | Dennis J. Dupray | Real estate transaction system |
| US10641861B2 (en) | 2000-06-02 | 2020-05-05 | Dennis J. Dupray | Services and applications for a communications network |
| US11971491B2 (en) | 2000-06-02 | 2024-04-30 | Mobile Maven Llc | Services and applications for a communications network |
-
1988
- 1988-09-01 JP JP21900888A patent/JPH0272258A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10641861B2 (en) | 2000-06-02 | 2020-05-05 | Dennis J. Dupray | Services and applications for a communications network |
| US11971491B2 (en) | 2000-06-02 | 2024-04-30 | Mobile Maven Llc | Services and applications for a communications network |
| US9875492B2 (en) | 2001-05-22 | 2018-01-23 | Dennis J. Dupray | Real estate transaction system |
| US11610241B2 (en) | 2001-05-22 | 2023-03-21 | Mobile Maven Llc | Real estate transaction system |
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